CN110838436A - Wet processing technology and application - Google Patents
Wet processing technology and application Download PDFInfo
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- CN110838436A CN110838436A CN201911074665.6A CN201911074665A CN110838436A CN 110838436 A CN110838436 A CN 110838436A CN 201911074665 A CN201911074665 A CN 201911074665A CN 110838436 A CN110838436 A CN 110838436A
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- 238000005516 engineering process Methods 0.000 title abstract description 10
- 239000000654 additive Substances 0.000 claims abstract description 162
- 239000007788 liquid Substances 0.000 claims abstract description 151
- 230000000996 additive effect Effects 0.000 claims abstract description 114
- 239000003814 drug Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 66
- 239000000126 substance Substances 0.000 claims abstract description 32
- 238000005530 etching Methods 0.000 claims description 82
- 238000004140 cleaning Methods 0.000 claims description 46
- 238000007747 plating Methods 0.000 claims description 29
- 238000009713 electroplating Methods 0.000 claims description 21
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000007654 immersion Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims 2
- 230000006866 deterioration Effects 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000012530 fluid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Abstract
The invention discloses a wet process technology and application. The wet process comprises the following steps: (1) contacting a workpiece to be processed with a first liquid medicine to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0; (2) and (3) placing the processing workpiece in a second liquid medicine for processing, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different. The wet process can effectively save the consumption of the additive and reduce the deterioration risk of the liquid medicine, thereby greatly reducing the process cost.
Description
Technical Field
The invention relates to the field of semiconductors and semi-conductors, in particular to a wet process technology and application.
Background
In the integrated circuit manufacturing and packaging process, dry process and wet process are two common processing technologies. In the wet process, the processed workpiece (such as a lead frame, a silicon wafer, a chip, etc.) usually contains a nano-scale or micro-scale trench structure, especially a deep trench structure with a high aspect ratio, and as the node of the semiconductor technology advances, the width of the trench becomes narrower (for example, 10 to 200 nanometers), and the value of the aspect ratio of the deep trench becomes larger. This dimensional evolution of the trench structure makes the wet processing more difficult.
In particular, when the liquid used in the wet process is a system containing additives, the additives are generally expensive and the effective action range of the additives is limited to the groove portion. However, in wet processing, the workpiece to be processed is generally required to be entirely immersed in the chemical solution, which causes the additives in the chemical solution not contacting the groove area to be in a "wasted" state.
In addition, in many wet processes, the workpiece to be treated needs to be immersed in the liquid medicine for a long time (several hours or even several days), the liquid medicine is easy to deteriorate in the process, especially, the deterioration of the additive can cause the effectiveness of the liquid medicine to be weakened or even to be invalid, and the workpiece can be polluted by-products generated by the deterioration. The deterioration of the chemical solution is caused by various factors, for example, deterioration due to temperature, deterioration due to atmospheric pressure, deterioration due to light, deterioration due to sound wave, chemical deterioration due to contact, deterioration of the chemical solution due to accumulation of by-products, and deterioration due to a high content of additives.
At present, no process exists for overcoming the above-mentioned defects of wet process in semiconductor field, and generally, the expensive cost and "waste" of additives are silently borne, and the frequent replacement of the liquid for preventing the deterioration of the liquid further increases the process cost.
Disclosure of Invention
The invention provides a wet process technology and application thereof, aiming at solving the technical problem of additive waste in the existing wet process technology. The wet process can effectively save the dosage of the additive and reduce the deterioration risk of the liquid medicine, thereby reducing the process cost.
The invention solves the technical problems through the following technical scheme.
The invention provides a wet process technology, which comprises the following steps:
(1) contacting a workpiece to be processed with a first liquid medicine to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0;
(2) and (3) placing the processing workpiece in a second liquid medicine for processing, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different.
In the wet process, preferably, the mass concentration of the second chemical additive is 0.
In the wet process, preferably, the mass concentration of the second chemical additive is greater than 0, and the mass concentration of the first chemical additive is greater than the mass concentration of the second chemical additive.
In the wet process, the workpiece to be processed is generally a wafer or a chip, preferably a wafer, and more preferably a large-sized wafer, such as an 8-12 inch wafer.
In the wet process, the workpiece to be treated is preferably a workpiece to be treated with a groove structure.
In the wet process, the width of the trench of the workpiece to be processed having the trench structure is preferably 1nm to 50 μm, for example, 10nm, 14nm, 20nm, 22nm, 45nm, 65nm, 90nm, 100nm, 120nm, 125nm, 150nm, 200nm, 300nm, 450nm, 1 μm, 5 μm or 8 μm, and more preferably 100nm to 50 μm.
In the wet process, the depth-to-width ratio of the groove of the workpiece to be processed with the groove structure is preferably (10-500): 1, e.g., 10:1, 20: 1. 35: 1. 36: 1. 38: 1. 39: 1. 40: 1. 50: 1. 60: 1. 70: 1. 72: 1. 75: 1. 76: 1. 78: 1. 80: 1. 90: 1. 100, and (2) a step of: 1. 105: 1. 108: 1. 114: 1. 117: 1. 120: 1. 125: 1. 150: 1. 200: 1. 225: 1. 250: 1. 275: 1. 300, and (2) 300: 1. 400: 1 or 500: 1, more preferably (10 to 72): 1.
in the wet process, the trench of the workpiece to be processed with the trench structure is preferably a deep trench.
In the wet process, the groove of the workpiece to be processed with the groove structure is preferably 100 nm-50 μm in width and 10-72 in aspect ratio: 1, more preferably 50 μm wide and 10:1 aspect ratio, and 100nm wide and 72:1 aspect ratio.
In the wet process, the workpiece to be treated is preferably a copper interconnection chip, and the copper interconnection chip is preferably a copper interconnection chip with a line width of 65 nm.
In the wet process, the first liquid medicine is generally a liquid medicine with the mass concentration of the additive in the first contact of the workpiece to be processed in the wet process being more than 0. The additives in the first fluid may be plating solution additives (e.g. plating solution additives disclosed in CN103397357A, or additives comprising three additives of type UPT3320A, type UPT3320S and type UPT3320L (available from shanghai new yang semiconductors), wherein the content of the additives UPT3320A/S/L is preferably 100 ppm.), cleaning solution additives (e.g. cleaning solution additives disclosed in CN104120040A or additives in cleaning solution of type SYS9050 (available from shanghai new yang semiconductors)), preferably cleaning solution additives disclosed in CN104120040A example 2 and additives in cleaning solution of type SYS9050 (available from shanghai new yang semiconductors)), stripping solution additives, etching solution additives (e.g. etching solution additives disclosed in CN1731280A example and additives in BOE etching solution disclosed in CN103756680A example 1) and etching solution additives (e.g. etching solution additives disclosed in CN107747094A, preferably etching solution additive as disclosed in CN107747094A example 5), preferably plating solution additives (e.g. plating solution additive as disclosed in CN103397357A or additive of model UPT3320A, additive of model UPT3320S and additive of model UPT3320L (available from shanghai new yang semiconductor), preferably plating solution additive as disclosed in CN103397357A example 3 and additive of model UPT3320 up 3320A, additive of model UPT3320S and additive of model UPT3320L (available from shanghai new yang semiconductor)), cleaning solution additives (e.g. cleaning solution additive as disclosed in CN104120040A or additive in cleaning solution of model SYS9050, preferably cleaning solution additive as disclosed in CN104120040A example 2 and additive in cleaning solution of model SYS 9050) and etching solution additives (e.g. etching solution additive as disclosed in CN1731280A example and BOE etching solution as disclosed in CN103756680A example 1), more preferably, the plating bath additives in the first solution include additives of UPT3320A type, additives of UPT3320S type, additives of UPT3320L type (available from shanghai new yang semiconductor), additives of cleaning solution of SYS9050 type (available from shanghai new yang semiconductor), and additives of BOE etching solution disclosed in CN103756680A example 1.
The first chemical liquid can be one or more of a plating liquid (such as a plating liquid disclosed in CN103397357A or a plating liquid with the model number SYS2510 (purchased from Shanghai Xinyang semiconductor), preferably a plating liquid disclosed in CN103397357A example 3 and a plating liquid with the model number SYS2510 (purchased from Shanghai Xinyang semiconductor)), a cleaning liquid (such as a cleaning liquid disclosed in CN104120040A or a cleaning liquid with the model number SYS9050 (purchased from Shanghai Xinyang semiconductor), preferably a cleaning liquid disclosed in CN104120040A example 2 and a cleaning liquid with the model number SYS9050 (purchased from Shanghai Xinyang semiconductor)), a stripping liquid (such as a stripping liquid disclosed in CN110262199A or CN109143800A, preferably stripping liquids disclosed in CN110262199A example 1 and CN109143800A example 7), an etching liquid (such as an etching liquid disclosed in CN1731280A example, preferably an etching liquid disclosed in CN1731280A example 1) and an etching liquid (such as an etching liquid disclosed in CN107747094A, preferably an etching liquid disclosed in CN107747094A example 5), preferred are one or more of a plating solution (e.g., a plating solution disclosed in CN103397357A or a plating solution of model No. SYS2510 (available from shanghai new yang semiconductors), preferably a plating solution disclosed in CN103397357A example 3 and a plating solution of model No. SYS2510 (available from shanghai new yang semiconductors)), a cleaning solution (e.g., a cleaning solution disclosed in CN104120040A or a plating solution of model No. SYS9050 (available from shanghai new yang semiconductors) and an etching solution (e.g., an etching solution disclosed in CN1731280A example, preferably a BOE etching solution disclosed in CN1731280A example 1), and more preferred are a plating solution of model No. SYS2510 (available from shanghai new yang semiconductors), a cleaning solution of model No. SYS9050 (available from shanghai new yang semiconductors) and a BOE etching solution (e 103756680A example 1, herein a BOE etching solution is as in CN103756680A example 1).
In the wet process, the contact mode is preferably one or more of surface wetting, immersion, soaking and filling, and is more preferably immersion.
In the wet process, the time for contacting the workpiece to be treated with the first liquid medicine is not particularly limited, but generally the workpiece to be treated is sufficiently contacted with the first liquid medicine, and preferably 5 min. The temperature of the workpiece to be treated in contact with the first chemical liquid is preferably room temperature.
In the wet process, the contact method principle is preferably one or more of capillary action, siphon action, osmosis action, negative pressure action, surface physical adsorption action and surface chemical adsorption action.
In the wet process, the contact may be accompanied by one or more of temperature control, pressure control, light control, megasonic treatment, ultrasonic treatment, vibration treatment, overflow treatment and spray treatment. The treatment means generally functions to promote adequate and rapid contact of the medical fluid with the site to be treated.
In the wet process, the second liquid medicine is generally a liquid medicine with additive mass concentration more than or equal to 0, wherein the workpiece to be treated is placed in the liquid medicine for treatment. The additive in the second chemical solution may be a plating solution additive (e.g., a plating solution additive disclosed in CN103397357A, preferably a plating solution additive disclosed in CN103397357A example 3, or an additive comprising three additives of UPT3320A, UPT3320S and UPT3320L (available from shanghai juyang semiconductors), wherein the content of the additives UPT3320A/S/L in the first chemical solution is preferably 100 ppm.), a cleaning solution additive (e.g., a cleaning solution additive disclosed in CN104120040A or an additive in a cleaning solution of SYS9050 (available from shanghai juyang semiconductors), preferably an additive disclosed in CN104120040A example 2 and an additive in a cleaning solution of SYS9050 (available from shanghai juyang semiconductors)), a stripping solution additive, an etching solution additive (e.g., an etching solution additive disclosed in CN1731280A example HCl and a BOE etching solution disclosed in CN103756680A example 1) and an etching solution additive disclosed in etching solution (e.g., CN 32 disclosed in CN103756680A example 107747094A) Etching solution additive, preferably etching solution additive disclosed in embodiment 5 of CN 107747094A), and the second chemical solution additive is preferably etching solution additive (such as etching solution additive HCl disclosed in embodiment of CN1731280A and additive in BOE etching solution), and the second chemical solution additive is more preferably additive in BOE etching solution. The mass concentration of the additive in the second chemical solution is preferably 0 to 1%, for example 0 or 1%.
The second liquid medicine can be electroplating liquid (such as electroplating liquid disclosed in CN103397357A or electroplating liquid with the model number SYS2510 (purchased from Shanghai Xinyang semiconductor), preferably electroplating liquid disclosed in CN103397357A example 3 and electroplating liquid with the model number SYS2510 (purchased from Shanghai Xinyang semiconductor)), cleaning liquid (such as cleaning liquid disclosed in CN104120040A or cleaning liquid with the model number SYS9050 (purchased from Shanghai Xinyang semiconductor), preferably cleaning liquid disclosed in CN104120040A example 2 and cleaning liquid with the model number SYS9050 (purchased from Shanghai Xinyang semiconductor)), stripping liquid (such as stripping liquid disclosed in CN110262199A or CN109143800A, preferably stripping liquid disclosed in CN110262199A example 1 and CN109143800A example 7), etching liquid (such as BOE etching liquid disclosed in CN1731280A example, preferably BOE etching liquid disclosed in CN1731280A example 1), deionized water with the mass concentration of more than or equal to 0 and etching liquid (such as etching liquid disclosed in CN107747094A, preferably etching liquid disclosed in CN 107747094A) or more of more than one kind, the second liquid medicine is preferably one or more of an electroplating solution with the model number of SYS2510 (purchased from Shanghai Xinyang semiconductor) and deionized water with the additive mass concentration being more than or equal to 0. The second liquid medicine is more preferably an electroplating solution with the model number of SYS2510 (purchased from Shanghai Xinyang semiconductor), deionized water with the mass concentration of 0 of additive, and deionized water with the mass concentration of 1% of additive of etching solution. In one embodiment, the second medical fluid is model number SYS2510 (available from shanghai new yang semiconductor). In one embodiment, the second liquid medicine is deionized water with the mass concentration of the additive being 0. In one embodiment, the second chemical solution is deionized water with a mass concentration of 1% of the additive in the BOE etching solution.
The treatment mode of the wet process is preferably one or more of electroplating, cleaning, stripping, etching and etching, and is preferably one or more of electroplating, cleaning and etching.
In the wet process, the time for treating the workpiece in the second liquid medicine is preferably 30-100min, for example 30min, 60min or 100 min. The temperature of the processing workpiece in the second liquid medicine is preferably room temperature.
In the wet process, the processes of contacting the workpiece to be treated with the first liquid medicine and placing the workpiece to be treated in the second liquid medicine for treatment can be circulated or repeated for multiple times.
In the wet process, the process is preferably performed under a negative pressure condition, and the negative pressure is preferably a vacuum environment.
The wet process technology is applied to the fields of semiconductors and semi-conductors. The field of ubiquitous semiconductors includes chip manufacturing, discrete device manufacturing, optoelectronic device manufacturing, photovoltaic material manufacturing, power device manufacturing, MEMS microelectromechanical device manufacturing.
The invention further provides process equipment matched with the process principle of the invention. The process equipment preferably comprises a soaking tank and a vacuum pumping device.
In one embodiment, the electroplating process comprises the following steps:
(1) under the negative pressure condition, contacting a workpiece to be processed with a first liquid medicine in an immersion mode to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0;
(2) and (3) placing the workpiece to be processed in a second liquid medicine for electroplating, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different.
In the electroplating process, the time for immersing the workpiece to be treated in the first liquid medicine is preferably 5min, the additives of the first liquid medicine preferably comprise additives of UPT3320A, UPT3320S and additives of UPT3320L (all purchased from Shanghai Xinyang semiconductor), the second liquid medicine preferably comprises a plating solution of SYS2510 (purchased from Shanghai Xinyang semiconductor), and the treatment time of the treated workpiece in the second liquid medicine is preferably 30 min. The electroplating process is preferably carried out at room temperature.
In one embodiment, the cleaning process comprises the following steps:
(1) under the negative pressure condition, contacting a workpiece to be processed with a first liquid medicine in an immersion mode to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0;
(2) and (3) placing the processing workpiece in a second liquid medicine for cleaning, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different.
In the cleaning process, the time for immersing the workpiece to be treated in the first liquid medicine is preferably 5min, the first liquid medicine is preferably a cleaning liquid with the model number of SYS9050 (purchased from Shanghai Xinyang semiconductor), the second liquid medicine is preferably deionized water with the mass concentration of an additive being 0, and the treatment time for treating the workpiece in the second liquid medicine is preferably 60 min. The cleaning process is preferably carried out at 20-75 ℃; more preferably at room temperature.
In one embodiment, the etching process includes the following steps:
(1) under the negative pressure condition, contacting a workpiece to be processed with a first liquid medicine in an immersion mode to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0;
(2) and placing the processing workpiece in a second liquid medicine for etching, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different.
In the etching process, the time for immersing the workpiece to be processed in the first liquid medicine is preferably 5min, and the first liquid medicine is preferably BOE etching liquid. The second liquid medicine additive is preferably 0 to 1 mass percent, the second liquid medicine additive is preferably an additive in BOE etching liquid, the second liquid medicine is more preferably deionized water with the mass concentration of the additive being 0 and deionized water with the mass concentration of the additive being 1 percent, and the processing time of the processed workpiece in the second liquid medicine is preferably 100 min. The etching process is preferably carried out at 20-170 ℃; more preferably at room temperature.
The above preferred conditions can be arbitrarily combined to obtain preferred embodiments of the present invention without departing from the common general knowledge in the art.
In the present invention, room temperature refers to ambient temperature, typically-10 ℃ to 40 ℃, e.g. 10 ℃ to 30 ℃.
The reagents and starting materials used in the present invention are commercially available.
The positive progress effects of the invention are as follows: the invention greatly reduces the dosage of the additive by improving the wet process; meanwhile, the deterioration risk of the liquid medicine is reduced by reducing the time for soaking the workpiece in the liquid medicine containing the additive, so that the replacement frequency of the liquid medicine containing the additive is reduced, the yield of the workpiece is improved, and the process cost is reduced.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention. The experimental methods without specifying specific conditions in the following examples were selected according to the conventional methods and conditions, or according to the commercial instructions.
EXAMPLE 1 electroplating
For aspect ratio 10: and 1, carrying out electroplating copper plating filling on the TSV groove with the width of 50 mu m and the thickness of the silicon substrate of 200 mu m.
Yield: example 1 was 96% and comparative example 1 was 95%.
Saving amount of electroplating additive: example 1 saves 150ug/L and comparative example 1 is 0.
Note: electroplating baths of type UPT3320A/S/L and type SYS2510 are disclosed in detail in Zhu Y, MaS et al [ J ]. Microelectronic Engineering,2014,117: 8-12.
Example 2: cleaning of
Cleaning copper interconnection chip with 65nm line width after dry etching ashing
Yield: example 2 was 95% and comparative example 2 was 93%.
Saving amount of additives: example 2 saves 110mg/L and comparative example 2 is 0.
Example 3: etching of
For aspect ratios 72:1, selectively etching the silicon oxide with the thickness of 20nm on the surface layer of the deep groove with the width of 100 nm. The lower layer of silicon oxide is silicon nitride. The silicon nitride needs to be undamaged. The substrate is made of silicon wafer, and the silicon is not damaged. The etching liquid is silicon oxide etching liquid with high selection ratio (the selection ratio is higher than 100: 1) of etching speed relative to silicon nitride and silicon.
Yield: example 3 was 98% and comparative example 3 was 90%.
Saving amount of additives: example 3 gave a 123mg/L saving, comparative example 3 was 0.
Deterioration condition of the etching solution: example 3 no yellowing and deterioration of the solution during etching; comparative example 3 the solution started to yellow and deteriorate during the etching process at 60 min.
Example 4: etching of
For aspect ratios 72:1, selectively etching the silicon oxide with the thickness of 20nm on the surface layer of the deep groove with the width of 100 nm. The lower layer of silicon oxide is silicon nitride. The silicon nitride needs to be undamaged. The substrate is made of silicon wafer, and the silicon is not damaged. The etching liquid is silicon oxide etching liquid with high selection ratio (the selection ratio is higher than 100: 1) of etching speed relative to silicon nitride and silicon.
Yield: example 4 was 98% and comparative example 4 was 90%.
Saving amount of additives: example 4 gave a 140mg/L saving, comparative example 4 was 0.
Deterioration condition of the etching solution: example 4 the solution did not yellow and deteriorate during the etching process; comparative example 4 the solution started to yellow and deteriorate during etching at 60 min.
Claims (10)
1. A wet process is characterized by comprising the following steps:
(1) contacting a workpiece to be processed with a first liquid medicine to obtain a processed workpiece, wherein the mass concentration of a first liquid medicine additive is greater than 0;
(2) and (3) placing the processing workpiece in a second liquid medicine for processing, wherein the mass concentration of the second liquid medicine additive is more than or equal to 0, and the chemical components of the first liquid medicine additive and the second liquid medicine additive are the same or different.
2. The wet processing process according to claim 1, wherein the second chemical additive has a mass concentration of 0; and/or if the mass concentration of the second liquid medicine additive is greater than 0, the mass concentration of the first liquid medicine additive is greater than the mass concentration of the second liquid medicine additive.
3. The wet processing method of claim 1,
the workpiece to be processed is a wafer or a chip;
and/or the workpiece to be processed is a workpiece to be processed containing a groove structure, the width of the workpiece to be processed containing the groove structure is 1 nm-50 mu m,
and/or the depth-to-width ratio of the groove of the workpiece to be processed with the groove structure is (10-500): 1;
and/or, the contact mode is one or more of surface wetting, immersion, soaking and filling, preferably immersion;
and/or the time for contacting the workpiece to be processed with the first liquid medicine is 5 min;
and/or the temperature of the workpiece to be processed in contact with the first liquid medicine is room temperature;
and/or the processing workpiece is placed in the second liquid medicine for processing for 30-100 min;
and/or the temperature of the processing workpiece in the second liquid medicine for processing is room temperature.
4. The wet processing method of claim 3,
the workpiece to be processed is a large-size wafer or a copper interconnection chip;
and/or the workpiece to be processed is a workpiece to be processed containing a groove structure, the width of the workpiece to be processed containing the groove structure is 100 nm-50 mu m,
and/or the depth-to-width ratio of the groove of the workpiece to be processed with the groove structure is (10-72): 1.
5. the wet processing process of claim 1, wherein the additive in the first chemical solution is one or more of a plating solution additive, a cleaning solution additive, a stripping solution additive, an etching solution additive, and an etching solution additive; and/or the additive in the second liquid medicine is one or more of electroplating liquid additive, cleaning liquid additive, stripping liquid additive, etching liquid additive and etching liquid additive.
6. The wet processing process of claim 5, wherein the additive in the first chemical solution is one or more of a plating solution additive, a cleaning solution additive, and an etching solution additive; and/or the additive in the second liquid medicine is an etching liquid additive.
7. The wet processing process according to claim 6, wherein the plating solution additives in the first chemical solution comprise additives of UPT3320A type, additives of UPT3320S type and additives of UPT3320L type, and the cleaning solution additives in the first chemical solution are additives in a cleaning solution of SYS9050 type or etching solution additives in the first chemical solution are additives in BOE etching solution; and/or the etching solution additive in the second liquid medicine is an additive in BOE etching solution.
8. The wet processing process of claim 1, wherein the first chemical solution is one or more of a plating solution, a cleaning solution, a stripping solution, an etching solution, and an etching solution; and/or the second liquid medicine is one or more of electroplating liquid, cleaning liquid, stripping liquid, etching liquid, deionized water with additive mass concentration more than or equal to 0 and etching liquid.
9. The wet processing process of claim 8, wherein said first chemical solution is one or more of a plating solution, a cleaning solution, and an etching solution; and/or the second liquid medicine is one or more of deionized water and electroplating liquid with additive mass concentration more than or equal to 0.
10. The wet processing process according to claim 9, wherein the first liquid is a plating solution of type SYS2510, a cleaning solution of type SYS9050 or a BOE etching solution; and/or the second liquid medicine is an electroplating liquid with the model number of SYS2510, deionized water with the mass concentration of an additive being 0 or deionized water with the mass concentration of an additive being 1% of BOE etching liquid.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093254A (en) * | 1998-10-30 | 2000-07-25 | Lam Research Corporation | Method of HF-HF Cleaning |
| US20030089986A1 (en) * | 2001-11-13 | 2003-05-15 | Daniele Gilkes | Microelectronic device layer deposited with multiple electrolytes |
| CN101106085A (en) * | 2006-07-11 | 2008-01-16 | 恩益禧电子股份有限公司 | Method of manufacturing semiconductor device |
| CN101230462A (en) * | 2008-02-20 | 2008-07-30 | 汕头超声印制板（二厂）有限公司 | Etching liquid and method for manufacturing printed circuit board |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| TW201132807A (en) * | 2010-01-07 | 2011-10-01 | BZ Plating Process Solution | Intelligent control system for electrochemical plating process |
| TW201139760A (en) * | 2010-01-27 | 2011-11-16 | Ebara Corp | Plating method and plating apparatus |
| WO2012167593A1 (en) * | 2011-06-05 | 2012-12-13 | 广州纳科米兹新材料有限公司 | Preparation of disordered porous silicon dioxide material and use of peregal in preparation thereof |
| CN105428230A (en) * | 2014-09-11 | 2016-03-23 | 株式会社东芝 | Etching method, method of manufacturing article and semiconductor device, and etching solution |
| CN107919278A (en) * | 2016-10-07 | 2018-04-17 | 三星电子株式会社 | The method of wet etching and the method using its manufacture semiconductor device |
| CN108054238A (en) * | 2017-12-06 | 2018-05-18 | 江苏辉伦太阳能科技有限公司 | A kind of method that chain type wet chemistry method prepares the black silicon of controlled architecture polycrystalline |
| CN108277529A (en) * | 2018-01-26 | 2018-07-13 | 江苏荣马新能源有限公司 | A kind of black silicon preparation method of wet method |
-
2019
- 2019-11-06 CN CN201911074665.6A patent/CN110838436A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093254A (en) * | 1998-10-30 | 2000-07-25 | Lam Research Corporation | Method of HF-HF Cleaning |
| US20030089986A1 (en) * | 2001-11-13 | 2003-05-15 | Daniele Gilkes | Microelectronic device layer deposited with multiple electrolytes |
| CN101106085A (en) * | 2006-07-11 | 2008-01-16 | 恩益禧电子股份有限公司 | Method of manufacturing semiconductor device |
| CN101230462A (en) * | 2008-02-20 | 2008-07-30 | 汕头超声印制板（二厂）有限公司 | Etching liquid and method for manufacturing printed circuit board |
| TW201132807A (en) * | 2010-01-07 | 2011-10-01 | BZ Plating Process Solution | Intelligent control system for electrochemical plating process |
| TW201139760A (en) * | 2010-01-27 | 2011-11-16 | Ebara Corp | Plating method and plating apparatus |
| CN102115915A (en) * | 2010-12-31 | 2011-07-06 | 百力达太阳能股份有限公司 | Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
| WO2012167593A1 (en) * | 2011-06-05 | 2012-12-13 | 广州纳科米兹新材料有限公司 | Preparation of disordered porous silicon dioxide material and use of peregal in preparation thereof |
| CN105428230A (en) * | 2014-09-11 | 2016-03-23 | 株式会社东芝 | Etching method, method of manufacturing article and semiconductor device, and etching solution |
| CN107919278A (en) * | 2016-10-07 | 2018-04-17 | 三星电子株式会社 | The method of wet etching and the method using its manufacture semiconductor device |
| CN108054238A (en) * | 2017-12-06 | 2018-05-18 | 江苏辉伦太阳能科技有限公司 | A kind of method that chain type wet chemistry method prepares the black silicon of controlled architecture polycrystalline |
| CN108277529A (en) * | 2018-01-26 | 2018-07-13 | 江苏荣马新能源有限公司 | A kind of black silicon preparation method of wet method |
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