CN1712914A - Gallium nitride ultraviolet chroma detector and production thereof - Google Patents
Gallium nitride ultraviolet chroma detector and production thereof Download PDFInfo
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- CN1712914A CN1712914A CN 200410048228 CN200410048228A CN1712914A CN 1712914 A CN1712914 A CN 1712914A CN 200410048228 CN200410048228 CN 200410048228 CN 200410048228 A CN200410048228 A CN 200410048228A CN 1712914 A CN1712914 A CN 1712914A
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Abstract
An ultraviolet chrominance detector of gallium nitride comprises two back to back gallium nitride ultraviolet detectors in PIN structure with different parameter to lead different response spectrum, and with fixed ratio of photocurrent chart having relation only to incoming light wave but no relation to incoming light intensity so that specific wavelength of incoming ultraviolet ray can be judged out by using proper reading out circuit to obtain figure relating to photocurrent ratio of these two detectors . .
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly a kind of gallium nitride ultraviolet chromaticity detector and preparation method thereof.
Background technology
As third generation semiconductor, gallium nitride (GaN) and series material thereof (comprising aluminium nitride, aluminum gallium nitride, indium gallium nitrogen, indium nitride) are big with its energy gap, spectral range is wide (having covered from ultraviolet to infrared all band), heat-resisting quantity and good corrosion resistance, in optoelectronics and microelectronics field huge using value are arranged.The GaN ultraviolet detector is a kind of very important GaN base optical electronic part, and, military domain civilian in guided missile alarm, the detection of rocket plumage cigarette, ultraviolet communication, chemical and biological weapons detection, aircraft guidance, spaceship, fire monitoring etc. has important use to be worth.Compare with the silicon ultraviolet detector, the GaN base ultraviolet detector because have that visible light is blind, quantum efficiency is high, the incomparable advantage of can under high temperature and causticity environment, working or the like, can accomplish that in actual applications false alarm rate is low, highly sensitive, antijamming capability is strong, be subjected to people's attention greatly.
Obtain remarkable progress aspect the GaN ultraviolet detector in the world at present, developing the unit component and the focal plane arrays (FPA) of multiple structure.But these detectors all have very strong response to ultraviolet light, but can not judge the concrete wavelength of incident light.Influenced further developing and using of gallium nitride ultraviolet detector.
Summary of the invention
The objective of the invention is to propose a kind of new gallium nitride colourity ultraviolet detector and preparation method thereof.This detector can be judged the concrete wavelength of incident uv.
The present invention utilized cleverly two ultraviolet detectors with different spectral responses photocurrent ratio only with the rule of incident light wave long correlation, two unit ultraviolet detectors are made a device, form new gallium nitride ultraviolet chromaticity detector.It is characterized in that, the N type of on substrate 10, growing successively ohmic contact layer 11, active layer 12, P type ohmic contact layer 13, active layer 14, N type ohmic contact layer 15, N type ohmic contact layer 11, active layer 12, P type ohmic contact layer 13 have been formed a PIN structure detector like this, and P type ohmic contact layer 13, active layer 14, N type ohmic contact layer 15 have been formed another one PIN structure detector, and the very thin thickness of N type ohmic contact layer 15, much smaller than the thickness of P type ohmic contact layer 13, only for forming good Ohmic contact.The concrete structure parameter of these two back-to-back gallium nitride single-element detectors is different, caused the response spectrum of two devices also different, but the ratio of the optogalvanic spectra of these two devices is fixed, and is irrelevant with the light intensity of incident light, only relevant with the incident light wavelength.As long as utilize suitable sensing circuit, can access the relevant numerical value of ratio with the photocurrent of these two unit components, just can judge the concrete wavelength of incident uv.
Technical scheme
A kind of gallium nitride ultraviolet chromaticity detector utilizes the ratio of the photocurrent of two ultraviolet detectors with different spectral responses, and two unit ultraviolet detectors are made a device, forms new gallium nitride ultraviolet chromaticity detector.
Gallium nitride ultraviolet chromaticity detector comprises:
One substrate 10;
One N type ohmic contact layer (11), this N type ohmic contact layer (11) is produced on the substrate (10);
One active layer (12), this active layer (12) are produced on the N type ohmic contact layer (11);
One P type ohmic contact layer (13), this P type ohmic contact layer (13) is produced on the active layer (12), and the face of this P type ohmic contact layer (13) is less than the area of active layer (12);
One active layer (14), this active layer (14) is produced on the P type ohmic contact layer (13), and the area of this active layer (14) is less than on the P type ohmic contact layer (13);
One N type ohmic contact layer (15), this N type ohmic contact layer (15) is produced on the active layer (14);
One N type Ohmic electrode (16), this N type Ohmic electrode (16) is produced on the N type ohmic contact layer (11);
One P type Ohmic electrode (17), this P type Ohmic electrode (17) is produced on the P type ohmic contact layer (13);
One N type Ohmic electrode (18), this N type Ohmic electrode (18) are made on the N type ohmic contact layer (15);
Described substrate (10) is sapphire, silicon, silit, gallium nitride or GaAs material.
Described N type Ohmic electrode (16) is dots structure or loop configuration.
Described P type Ohmic electrode (17) is dots structure or loop configuration.
Described N type Ohmic electrode (18) is dots structure or loop configuration.
Description of drawings
In order to further specify content of the present invention, below in conjunction with instantiation and drawings in detail as after, wherein:
The gallium nitride ultraviolet chromaticity detector device architecture synoptic diagram that Fig. 1 the present invention proposes.
Fig. 2 is the photocurrent spectrogram of two device cells of the present invention.
Fig. 3 is the ratio figure of the optogalvanic spectra of two device cells of the present invention.
Embodiment
Among Fig. 1, in conjunction with instantiation, the preparation process of the gallium nitride ultraviolet chromaticity detector that the present invention proposes is specific as follows: be on the substrate 10 with the sapphire, (thickness is 3 μ m to N type GaN ohmic contact layer 11, and electron concentration is 3 * 10 to utilize the MOCVD epitaxial growth equipment to grow successively
18Cm
-3), (thickness is 0.4 μ m to intrinsic GaN active layer 12, and electron concentration is 1 * 10
16Cm
-3), (thickness is 0.6 μ m to P type GaN ohmic contact layer 13, and electron concentration is 5 * 10
17Cm
-3), (thickness is 0.4 μ m to intrinsic GaN active layer 14, and electron concentration is 1 * 10
16Cm
-3), (thickness is 0.03 μ m to N type GaN ohmic contact layer 15, and electron concentration is 3 * 10
18Cm
-3).Expose N type GaN ohmic contact layer 11, P type GaN ohmic contact layer 13 with dry etching, wherein P type GaN ohmic contact layer etching depth is 0.3 μ m.Successively make P type Ohmic electrode 17, N type Ohmic electrode 15, N type Ohmic electrode 18 with methods such as photoetching, plated films then, wherein, need the thermal annealing alloying technology to improve P type GaN ohmic contact characteristic.Carry out at last that substrate thinning, tube core are cut apart, pressure welding, encapsulation, make gallium nitride ultraviolet chromaticity detector.
We have carried out analog computation to the optogalvanic spectra of the gallium nitride ultraviolet chromaticity detector that the present invention proposes, wherein:
The optogalvanic spectra of two device cells of Fig. 2.Wherein, solid line is represented the optogalvanic spectra of the PIN structure detector cells 1 that N type GaN ohmic contact layer 15, intrinsic GaN active layer 14, P type ohmic contact layer 13 are formed, and dotted line is represented the optogalvanic spectra of the PIN structure detector cells 2 that P type GaN ohmic contact layer 13, intrinsic GaN active layer 12, N type GaN ohmic contact layer 11 are formed.
The ratio of the optogalvanic spectra of two device cells of Fig. 3
As can be seen, the photocurrent ratio of two back-to-back PIN structure detector cells is only relevant with the incident light wavelength from Fig. 3.Utilize this rule, add suitable sensing circuit again, just can judge the wavelength of incident uv.
The present invention utilized cleverly two ultraviolet detectors with different spectral responses photocurrent ratio only with the rule of incident light wave long correlation, two unit ultraviolet detectors are made a device, form new gallium nitride ultraviolet chromaticity detector.This ultraviolet chromaticity detector can be judged the concrete wavelength of incident uv.
Claims (22)
1, a kind of gallium nitride ultraviolet chromaticity detector is characterized in that, utilizes the ratio of the photocurrent of two ultraviolet detectors with different spectral responses, and two unit ultraviolet detectors are made a device, forms new gallium nitride ultraviolet chromaticity detector.
2, gallium nitride ultraviolet chromaticity detector according to claim 1 is characterized in that wherein gallium nitride ultraviolet chromaticity detector comprises:
One substrate (10);
One N type ohmic contact layer (11), this N type ohmic contact layer (11) is produced on the substrate (10);
One active layer (12), this active layer (12) are produced on the N type ohmic contact layer (11);
One P type ohmic contact layer (13), this P type ohmic contact layer (13) is produced on the active layer (12), and the area of this P type ohmic contact layer (13) is less than the area of active layer (12);
One active layer (14), this active layer (14) is produced on the P type ohmic contact layer (13), and the area of this active layer (14) is less than the area of P type ohmic contact layer (13);
One N type ohmic contact layer (15), this N type ohmic contact layer (15) is produced on the active layer (14);
One N type Ohmic electrode (16), this N type Ohmic electrode (16) is produced on the N type ohmic contact layer (11);
One P type Ohmic electrode (17), this P type Ohmic electrode (17) is produced on the P type ohmic contact layer (13);
One N type Ohmic electrode (18), this N type Ohmic electrode (18) are made on the N type ohmic contact layer (15);
3, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, wherein said substrate (10) is sapphire, silicon, silit, gallium nitride or GaAs material.
4, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, N type ohmic contact layer (11) is the n type gallium nitride material, and its electron concentration is greater than 1 * 10
18Cm
-3
5, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, active layer (12) is the intrinsic gallium nitride material, and its electron concentration is less than 1 * 10
17Cm
-3
6, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, P type ohmic contact layer (13) is a P type gallium nitride material, and its hole concentration is greater than 1 * 10
17Cm
-3
7, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, active layer (14) is the intrinsic gallium nitride material, and its electron concentration is less than 1 * 10
17Cm
-3
8, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, N type ohmic contact layer (15) is the n type gallium nitride material, and its electron concentration is greater than 1 * 10
18Cm
-3
9, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, the very thin thickness of N type ohmic contact layer (15) is much smaller than the thickness of P type ohmic contact layer (13).
10, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, wherein said N type Ohmic electrode (16) is dots structure or loop configuration.
11, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, wherein said P type Ohmic electrode (17) is dots structure or loop configuration.
12, gallium nitride ultraviolet chromaticity detector according to claim 1 and 2 is characterized in that, wherein said N type Ohmic electrode (18) is dots structure or loop configuration.
13, a kind of method for making of gallium nitride ultraviolet chromaticity detector is characterized in that, comprises the steps:
(1) on substrate (10), utilizes epitaxial growth equipment growth N type ohmic contact layer (11);
(2) go up growth active layer (12) at ohmic contact layer (11);
(3) go up growing P-type ohmic contact layer (13) at active layer (12);
(4) go up growth active layer (14) at P type ohmic contact layer (13);
(5) go up growth N type ohmic contact layer (15) at active layer (14);
(6) N type ohmic contact layer (15), active layer (14), P type ohmic contact layer (13), N type ohmic contact layer (12) are carried out etching;
(7) N type ohmic contact layer (15), active layer (14) are carried out etching;
(8) go up making P type Ohmic electrode (17) at P type ohmic contact layer (13);
(9) go up making Ohmic electrode (16) at N type ohmic contact layer (11);
(10) go up making Ohmic electrode (18) at N type ohmic contact layer (15);
(11) with substrate (10) attenuate, carry out tube core then and cut apart, be encapsulated at last on the shell, make gallium nitride ultraviolet chromaticity detector device.
14, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, wherein said substrate (10) is sapphire, silicon, silit, gallium nitride or GaAs material.
15, gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, N type ohmic contact layer (11) is the n type gallium nitride material, and its electron concentration is greater than 1 * 10
18Cm
-3
16, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, active layer (12) is the intrinsic gallium nitride material, and its electron concentration is less than 1 * 10
17Cm
-3
17, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, P type ohmic contact layer (13) is a P type gallium nitride material, and its hole concentration is greater than 1 * 10
17Cm
-3
18, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, active layer (14) is the intrinsic gallium nitride material, and its electron concentration is less than 1 * 10
17Cm
-3
19, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, N type ohmic contact layer (15) is the n type gallium nitride material, and its electron concentration is greater than 1 * 10
18Cm
-3
20, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, wherein said N type Ohmic electrode (16) is dots structure or loop configuration.
21, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, wherein said P type Ohmic electrode (17) is dots structure or loop configuration.
22, the method for making of gallium nitride ultraviolet chromaticity detector according to claim 13 is characterized in that, wherein said N type Ohmic electrode (18) is dots structure or loop configuration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100482284A CN100390511C (en) | 2004-06-15 | 2004-06-15 | Gallium nitride ultraviolet chroma detector and production thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100482284A CN100390511C (en) | 2004-06-15 | 2004-06-15 | Gallium nitride ultraviolet chroma detector and production thereof |
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| CN1712914A true CN1712914A (en) | 2005-12-28 |
| CN100390511C CN100390511C (en) | 2008-05-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626025B (en) * | 2008-07-09 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based multi-band detector and preparation method thereof |
| CN108447940A (en) * | 2018-03-12 | 2018-08-24 | 中国科学院半导体研究所 | Back-to-back biabsorption Si-based photodetectors and preparation method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001007379A (en) * | 1999-06-24 | 2001-01-12 | Sharp Corp | Gallium nitride based compound semiconductor light receiving element |
| US6806508B2 (en) * | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
| JP4465941B2 (en) * | 2001-11-22 | 2010-05-26 | 富士ゼロックス株式会社 | UV detector |
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2004
- 2004-06-15 CN CNB2004100482284A patent/CN100390511C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101626025B (en) * | 2008-07-09 | 2011-06-01 | 中国科学院半导体研究所 | GaN-based multi-band detector and preparation method thereof |
| CN108447940A (en) * | 2018-03-12 | 2018-08-24 | 中国科学院半导体研究所 | Back-to-back biabsorption Si-based photodetectors and preparation method |
| CN108447940B (en) * | 2018-03-12 | 2020-05-19 | 中国科学院半导体研究所 | Back-to-back double-absorption silicon-based photoelectric detector and preparation method thereof |
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| CN100390511C (en) | 2008-05-28 |
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Granted publication date: 20080528 |