CN1707762A - 齐纳二极管及其制造方法 - Google Patents
齐纳二极管及其制造方法 Download PDFInfo
- Publication number
- CN1707762A CN1707762A CNA2005100752377A CN200510075237A CN1707762A CN 1707762 A CN1707762 A CN 1707762A CN A2005100752377 A CNA2005100752377 A CN A2005100752377A CN 200510075237 A CN200510075237 A CN 200510075237A CN 1707762 A CN1707762 A CN 1707762A
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- Prior art keywords
- diffusion layer
- substrate
- diffusion
- electrode
- polar impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000009792 diffusion process Methods 0.000 claims abstract description 151
- 239000000758 substrate Substances 0.000 claims description 96
- 239000012535 impurity Substances 0.000 claims description 79
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 230000001681 protective effect Effects 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66098—Breakdown diodes
- H01L29/66106—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Led Devices (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040042724 | 2004-06-10 | ||
KR1020040042724A KR101116766B1 (ko) | 2004-06-10 | 2004-06-10 | 제너 다이오드의 제작방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1707762A true CN1707762A (zh) | 2005-12-14 |
CN100466202C CN100466202C (zh) | 2009-03-04 |
Family
ID=34937218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100752377A Expired - Fee Related CN100466202C (zh) | 2004-06-10 | 2005-06-07 | 齐纳二极管及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050274974A1 (zh) |
EP (1) | EP1605518A3 (zh) |
JP (1) | JP4978825B2 (zh) |
KR (1) | KR101116766B1 (zh) |
CN (1) | CN100466202C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101295736B (zh) * | 2007-04-29 | 2010-04-07 | 上海维恩佳得数码科技有限公司 | 半导体稳压器件及其制造方法 |
CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
CN102867819A (zh) * | 2011-07-08 | 2013-01-09 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100927256B1 (ko) * | 2004-07-09 | 2009-11-16 | 엘지전자 주식회사 | 제너다이오드가 집적된 발광소자 서브마운트 제작방법 |
KR100845855B1 (ko) | 2006-12-07 | 2008-07-14 | 엘지전자 주식회사 | 발광 소자 패키지 및 그 제조방법 |
JP5292787B2 (ja) * | 2007-11-30 | 2013-09-18 | ソニー株式会社 | 固体撮像装置及びカメラ |
US11158759B1 (en) | 2020-04-16 | 2021-10-26 | International Business Machines Corporation | Chip carrier integrating power harvesting and regulation diodes and fabrication thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1489809B2 (de) | 1965-11-09 | 1974-07-04 | Danfoss A/S, Nordborg (Daenemark) | Symmetrisch arbeitende Spannungsbegrenzungsvorrichtung mit einem Halbleiterkörper |
US4138280A (en) | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
US4349394A (en) * | 1979-12-06 | 1982-09-14 | Siemens Corporation | Method of making a zener diode utilizing gas-phase epitaxial deposition |
JPS5863176A (ja) | 1981-10-12 | 1983-04-14 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
DE3201545A1 (de) * | 1982-01-20 | 1983-07-28 | Robert Bosch Gmbh, 7000 Stuttgart | Planare halbleiteranordnung |
JPS6265382A (ja) * | 1985-09-17 | 1987-03-24 | Agency Of Ind Science & Technol | サ−ジ吸収素子 |
JPH0770739B2 (ja) * | 1986-12-26 | 1995-07-31 | 株式会社日立製作所 | ガラスモ−ルド型ツエナ−ダイオ−ドの不純物拡散方法 |
US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
JPH0689936A (ja) * | 1992-09-09 | 1994-03-29 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH06291339A (ja) * | 1993-04-06 | 1994-10-18 | Fuji Electric Co Ltd | 半導体素子 |
JPH07183468A (ja) * | 1993-12-22 | 1995-07-21 | Tokin Corp | 絶縁シリコン基板並びにそれを用いたインダクタおよび分布定数型フィルタ |
JPH08306699A (ja) * | 1995-05-09 | 1996-11-22 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP4112160B2 (ja) * | 1999-09-08 | 2008-07-02 | クウォンタム・コーポレイション | テープカートリッジ |
JP3583704B2 (ja) * | 2000-01-12 | 2004-11-04 | 独立行政法人 科学技術振興機構 | 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法 |
JP2001250962A (ja) * | 2000-03-07 | 2001-09-14 | Toko Inc | ダイオード |
US7160917B2 (en) * | 2002-12-13 | 2007-01-09 | Sanofi-Aventis Deutschland Gmbh | Spirobenzofuran lactams and their derivatives, processes for their preparation and use thereof |
-
2004
- 2004-06-10 KR KR1020040042724A patent/KR101116766B1/ko not_active IP Right Cessation
-
2005
- 2005-06-03 EP EP05012020A patent/EP1605518A3/en not_active Ceased
- 2005-06-07 CN CNB2005100752377A patent/CN100466202C/zh not_active Expired - Fee Related
- 2005-06-09 US US11/148,291 patent/US20050274974A1/en not_active Abandoned
- 2005-06-10 JP JP2005171232A patent/JP4978825B2/ja not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101295736B (zh) * | 2007-04-29 | 2010-04-07 | 上海维恩佳得数码科技有限公司 | 半导体稳压器件及其制造方法 |
CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
CN102082093B (zh) * | 2010-12-10 | 2014-03-05 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片的生产工艺 |
CN102867819A (zh) * | 2011-07-08 | 2013-01-09 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
US9040325B2 (en) | 2011-07-08 | 2015-05-26 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing light emitting diode package having a voltage stabilizing module consisting of two doping layers |
CN102867819B (zh) * | 2011-07-08 | 2015-09-02 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050117415A (ko) | 2005-12-14 |
JP4978825B2 (ja) | 2012-07-18 |
KR101116766B1 (ko) | 2012-02-22 |
US20050274974A1 (en) | 2005-12-15 |
JP2005354079A (ja) | 2005-12-22 |
EP1605518A3 (en) | 2006-09-06 |
EP1605518A2 (en) | 2005-12-14 |
CN100466202C (zh) | 2009-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: YINGDI CO., LTD. Free format text: FORMER OWNER: LG ELECTRONICS, INC. Effective date: 20141126 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20141126 Address after: Seoul, South Kerean Patentee after: Neo Lab Convergence Inc. Address before: Seoul, South Kerean Patentee before: LG Electronics, Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090304 Termination date: 20160607 |