CN1697575B - 有机发光显示装置及其制造方法 - Google Patents
有机发光显示装置及其制造方法 Download PDFInfo
- Publication number
- CN1697575B CN1697575B CN2005100655926A CN200510065592A CN1697575B CN 1697575 B CN1697575 B CN 1697575B CN 2005100655926 A CN2005100655926 A CN 2005100655926A CN 200510065592 A CN200510065592 A CN 200510065592A CN 1697575 B CN1697575 B CN 1697575B
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- pixel electrode
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims abstract description 73
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 9
- 229910018507 Al—Ni Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 239000002184 metal Substances 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
- E06B3/96—Corner joints or edge joints for windows, doors, or the like frames or wings
- E06B3/964—Corner joints or edge joints for windows, doors, or the like frames or wings using separate connection pieces, e.g. T-connection pieces
- E06B3/968—Corner joints or edge joints for windows, doors, or the like frames or wings using separate connection pieces, e.g. T-connection pieces characterised by the way the connecting pieces are fixed in or on the frame members
- E06B3/9684—Corner joints or edge joints for windows, doors, or the like frames or wings using separate connection pieces, e.g. T-connection pieces characterised by the way the connecting pieces are fixed in or on the frame members by hooking protrusions on the connecting piece in openings of the frame member, e.g. by snap-locking
- E06B3/9685—Mitre joints
-
- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
- E06B3/96—Corner joints or edge joints for windows, doors, or the like frames or wings
- E06B3/964—Corner joints or edge joints for windows, doors, or the like frames or wings using separate connection pieces, e.g. T-connection pieces
- E06B3/9647—Corner joints or edge joints for windows, doors, or the like frames or wings using separate connection pieces, e.g. T-connection pieces the connecting piece being part of or otherwise linked to the window or door fittings
- E06B3/9648—Mitre joints
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040033221A KR100590270B1 (ko) | 2004-05-11 | 2004-05-11 | 유기 전계 발광 표시 장치 |
KR33221/04 | 2004-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1697575A CN1697575A (zh) | 2005-11-16 |
CN1697575B true CN1697575B (zh) | 2010-05-05 |
Family
ID=35350053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100655926A Expired - Fee Related CN1697575B (zh) | 2004-05-11 | 2005-04-18 | 有机发光显示装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050258426A1 (zh) |
JP (1) | JP2005326815A (zh) |
KR (1) | KR100590270B1 (zh) |
CN (1) | CN1697575B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4728170B2 (ja) * | 2006-05-26 | 2011-07-20 | 三菱電機株式会社 | 半導体デバイスおよびアクティブマトリクス型表示装置 |
KR100752388B1 (ko) * | 2006-11-01 | 2007-08-27 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
KR100807557B1 (ko) | 2006-11-10 | 2008-03-03 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
JP2008124399A (ja) * | 2006-11-15 | 2008-05-29 | Toshiba Corp | 半導体装置の製造方法 |
KR100788551B1 (ko) | 2006-12-29 | 2007-12-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
KR100788545B1 (ko) | 2006-12-29 | 2007-12-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
KR101386194B1 (ko) * | 2007-06-22 | 2014-04-18 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조방법 |
KR100875101B1 (ko) * | 2007-08-08 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 유기 발광 표시장치의 제조방법 |
JP2009076536A (ja) * | 2007-09-19 | 2009-04-09 | Mitsubishi Electric Corp | Al合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板 |
US10032844B2 (en) | 2014-12-29 | 2018-07-24 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
TWI630590B (zh) * | 2017-07-05 | 2018-07-21 | Industrial Technology Research Institute | 畫素結構以及顯示面板 |
CN112802878B (zh) * | 2020-12-30 | 2024-01-30 | 天马微电子股份有限公司 | 一种显示面板和显示装置 |
CN114582892A (zh) * | 2022-03-04 | 2022-06-03 | 广州华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
CN114743995A (zh) * | 2022-05-11 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及电子设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1440224A (zh) * | 2002-02-20 | 2003-09-03 | 三星电子株式会社 | 有源矩阵型有机电致发光显示器及其制造方法 |
WO2003098641A1 (en) * | 2002-05-17 | 2003-11-27 | Idemitsu Kousan Co., Ltd. | Wiring material and wiring board using the same |
US20040056273A1 (en) * | 2002-06-24 | 2004-03-25 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004055461A (ja) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | 発光装置及びその製造方法、並びに電子機器 |
JP3940385B2 (ja) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | 表示デバイスおよびその製法 |
-
2004
- 2004-05-11 KR KR1020040033221A patent/KR100590270B1/ko not_active IP Right Cessation
-
2005
- 2005-02-18 JP JP2005042918A patent/JP2005326815A/ja active Pending
- 2005-04-18 CN CN2005100655926A patent/CN1697575B/zh not_active Expired - Fee Related
- 2005-05-10 US US11/125,108 patent/US20050258426A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1440224A (zh) * | 2002-02-20 | 2003-09-03 | 三星电子株式会社 | 有源矩阵型有机电致发光显示器及其制造方法 |
WO2003098641A1 (en) * | 2002-05-17 | 2003-11-27 | Idemitsu Kousan Co., Ltd. | Wiring material and wiring board using the same |
US20040056273A1 (en) * | 2002-06-24 | 2004-03-25 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
Non-Patent Citations (1)
Title |
---|
JP昭59-193062A 1984.11.01 |
Also Published As
Publication number | Publication date |
---|---|
US20050258426A1 (en) | 2005-11-24 |
CN1697575A (zh) | 2005-11-16 |
KR100590270B1 (ko) | 2006-06-19 |
KR20050108156A (ko) | 2005-11-16 |
JP2005326815A (ja) | 2005-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1697575B (zh) | 有机发光显示装置及其制造方法 | |
US7701132B2 (en) | Organic electroluminescence display device having auxiliary electrode line and method of manufacturing the same | |
US8421090B2 (en) | Organic light emitting diode display and method of manufacturing the same | |
CN102214796B (zh) | 发光器件及其制造方法 | |
US9064755B2 (en) | Organic light-emitting display device and method of manufacturing the same | |
US8822999B2 (en) | Organic light-emitting display device and method of manufacturing the same | |
EP1587154B1 (en) | Organic electro-luminescent display device and method of manufacturing the same | |
KR101309863B1 (ko) | 발광 표시 장치 및 그 제조 방법 | |
CN102569340B (zh) | 有机发光显示设备及其制造方法 | |
US7488629B2 (en) | Fabricating method of an active-matrix organic electroluminescent display panel | |
US8008857B2 (en) | Organic light emitting display with reflective electrode | |
CN102549636B (zh) | 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 | |
KR100700644B1 (ko) | 제 2 전극 전원공급라인을 갖는 유기전계발광소자 및 그의 제조 방법 | |
CN102456712A (zh) | 制造柔性显示器的方法 | |
US7994706B2 (en) | Organic light emitting diode display device and method of fabricating the same | |
CN101043047A (zh) | 显示装置及其制造方法 | |
KR101338021B1 (ko) | 박막 트랜지스터, 이를 포함하는 유기 발광 표시 장치 및그 제조 방법 | |
KR20110090308A (ko) | 유기 발광 표시장치 및 그 제조방법 | |
EP1970957A2 (en) | Thin film transistor, an organic light emitting device including the same, and a manufacturing method thereof | |
US9231038B2 (en) | Thin film transistor array and EL display employing thereof | |
KR100793105B1 (ko) | 박막트랜지스터 및 박막트랜지스터를 포함한평판표시소자와 그 제조방법 | |
KR100825384B1 (ko) | 백색 유기 전계 발광 표시 장치 및 그 제조 방법 | |
KR101927485B1 (ko) | 표시장치 어레이 기판 및 그 제조방법 | |
KR20100042037A (ko) | 발광 표시 패널 및 그의 제조 방법 | |
KR20060108944A (ko) | 다결정 실리콘막을 채용한 박막 트랜지스터의 제조 방법,이에 따라 제조된 박막 트랜지스터 및 상기 박막트랜지스터를 구비한 평판 표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100505 Termination date: 20110418 |