CN1684273A - Thin film transistor and its producing method - Google Patents
Thin film transistor and its producing method Download PDFInfo
- Publication number
- CN1684273A CN1684273A CN200510065192.5A CN200510065192A CN1684273A CN 1684273 A CN1684273 A CN 1684273A CN 200510065192 A CN200510065192 A CN 200510065192A CN 1684273 A CN1684273 A CN 1684273A
- Authority
- CN
- China
- Prior art keywords
- film
- semiconductor film
- electrode
- pattern
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 41
- 239000010408 film Substances 0.000 claims abstract description 378
- 239000004065 semiconductor Substances 0.000 claims abstract description 151
- 230000003746 surface roughness Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000007788 roughening Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000007605 air drying Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 206010000234 Abortion spontaneous Diseases 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 208000015994 miscarriage Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 208000000995 spontaneous abortion Diseases 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004118881 | 2004-04-14 | ||
JP2004118881A JP4299717B2 (en) | 2004-04-14 | 2004-04-14 | Thin film transistor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1684273A true CN1684273A (en) | 2005-10-19 |
CN100490179C CN100490179C (en) | 2009-05-20 |
Family
ID=35263484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100651925A Active CN100490179C (en) | 2004-04-14 | 2005-04-14 | Thin film transistor and its producing method |
Country Status (5)
Country | Link |
---|---|
US (1) | US7476898B2 (en) |
JP (1) | JP4299717B2 (en) |
KR (1) | KR100660359B1 (en) |
CN (1) | CN100490179C (en) |
TW (1) | TWI297544B (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102812555A (en) * | 2010-03-11 | 2012-12-05 | 夏普株式会社 | Semiconductor device and method for manufacturing the same |
CN104934439A (en) * | 2015-04-28 | 2015-09-23 | 深圳市华星光电技术有限公司 | Manufacture method and structure of TFT substrate |
CN105609566A (en) * | 2009-09-16 | 2016-05-25 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
CN107204374A (en) * | 2017-05-16 | 2017-09-26 | 深圳市华星光电技术有限公司 | A kind of flexible thin-film transistor and preparation method thereof |
CN107591359A (en) * | 2017-08-15 | 2018-01-16 | 深圳市华星光电技术有限公司 | The method of adhesiveness between array base palte and preparation method thereof, raising film layer |
US10651312B2 (en) | 2017-05-16 | 2020-05-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible thin film transistor and method for fabricating the same |
CN113113475A (en) * | 2021-04-08 | 2021-07-13 | 合肥京东方显示技术有限公司 | Thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI268122B (en) * | 2005-01-25 | 2006-12-01 | Au Optronics Corp | Semiconductor structure having multilayer of polysilicon and display panel applied with the same |
KR100731738B1 (en) * | 2005-03-30 | 2007-06-22 | 삼성에스디아이 주식회사 | Thin film transistor, flat panel display and fabricating method of the same |
TWI305682B (en) * | 2006-08-14 | 2009-01-21 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
JP5081444B2 (en) | 2006-12-21 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | Display device |
JP2008177419A (en) * | 2007-01-19 | 2008-07-31 | Nissin Electric Co Ltd | Method for forming silicon thin film |
JP2008300755A (en) | 2007-06-04 | 2008-12-11 | Ips Alpha Technology Ltd | Display device |
US8334537B2 (en) * | 2007-07-06 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
TWI456663B (en) * | 2007-07-20 | 2014-10-11 | Semiconductor Energy Lab | Method for manufacturing display device |
US7897971B2 (en) | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR101452204B1 (en) * | 2007-11-05 | 2014-10-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Thin film transistor and display device having the thin film transistor |
KR101523353B1 (en) * | 2007-12-03 | 2015-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Thin film transistor and semiconductor device |
KR20090114919A (en) * | 2008-04-30 | 2009-11-04 | 경희대학교 산학협력단 | Manufacturing method of the sameInverse staggered poly-Si TFT with centet off-set |
US9666719B2 (en) * | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI491048B (en) * | 2008-07-31 | 2015-07-01 | Semiconductor Energy Lab | Semiconductor device |
KR101667909B1 (en) * | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
US8741702B2 (en) * | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2010123595A (en) * | 2008-11-17 | 2010-06-03 | Sony Corp | Thin film transistor and display |
JP5443588B2 (en) * | 2010-06-22 | 2014-03-19 | パナソニック株式会社 | Light emitting display device and manufacturing method thereof |
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
JP5830930B2 (en) * | 2011-05-19 | 2015-12-09 | ソニー株式会社 | Semiconductor elements and electronic equipment |
WO2018208285A1 (en) * | 2017-05-09 | 2018-11-15 | Intel Corporation | Transistor arrangements with uneven gate-drain surfaces |
CN110354691B (en) * | 2018-03-26 | 2020-12-18 | 京东方科技集团股份有限公司 | Gas screening membrane, method for producing same, and face mask |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001164886A (en) | 1999-12-07 | 2001-06-19 | Kubota Corp | Concrete segment connecting metal fitting |
US6678018B2 (en) | 2000-02-10 | 2004-01-13 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display and the method for fabricating the same |
JP2001324725A (en) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | Liquid crystal display device and method of manufacture |
JP2002083971A (en) | 2000-09-08 | 2002-03-22 | Nec Kagoshima Ltd | Method for manufacturing thin film transistor |
JP3904828B2 (en) * | 2000-12-07 | 2007-04-11 | 株式会社日立製作所 | Liquid crystal display |
JP3771456B2 (en) | 2001-03-06 | 2006-04-26 | 株式会社日立製作所 | Liquid crystal display device and thin film transistor manufacturing method |
KR100480333B1 (en) * | 2002-04-08 | 2005-04-06 | 엘지.필립스 엘시디 주식회사 | Array substrate for a liquid crystal display device and Method for fabricating of the same |
GB0210065D0 (en) * | 2002-05-02 | 2002-06-12 | Koninkl Philips Electronics Nv | Electronic devices comprising bottom gate tft's and their manufacture |
JP4227768B2 (en) | 2002-07-03 | 2009-02-18 | 三島光産株式会社 | Continuous casting mold |
JP4221314B2 (en) * | 2004-02-10 | 2009-02-12 | Nec液晶テクノロジー株式会社 | THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME, AND METHOD FOR PRODUCING THE THIN FILM TRANSISTOR |
-
2004
- 2004-04-14 JP JP2004118881A patent/JP4299717B2/en not_active Expired - Lifetime
-
2005
- 2005-04-13 US US11/104,424 patent/US7476898B2/en active Active
- 2005-04-13 TW TW094111668A patent/TWI297544B/en active
- 2005-04-14 CN CNB2005100651925A patent/CN100490179C/en active Active
- 2005-04-14 KR KR1020050030899A patent/KR100660359B1/en active IP Right Grant
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105609566A (en) * | 2009-09-16 | 2016-05-25 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
CN105609566B (en) * | 2009-09-16 | 2018-10-26 | 株式会社半导体能源研究所 | Semiconductor devices and its manufacturing method |
CN102812555A (en) * | 2010-03-11 | 2012-12-05 | 夏普株式会社 | Semiconductor device and method for manufacturing the same |
CN102812555B (en) * | 2010-03-11 | 2013-07-24 | 夏普株式会社 | Semiconductor device and method for manufacturing the same |
CN104934439A (en) * | 2015-04-28 | 2015-09-23 | 深圳市华星光电技术有限公司 | Manufacture method and structure of TFT substrate |
CN104934439B (en) * | 2015-04-28 | 2018-10-26 | 深圳市华星光电技术有限公司 | The production method and its structure of TFT substrate |
CN107204374A (en) * | 2017-05-16 | 2017-09-26 | 深圳市华星光电技术有限公司 | A kind of flexible thin-film transistor and preparation method thereof |
WO2018209757A1 (en) * | 2017-05-16 | 2018-11-22 | 深圳市华星光电半导体显示技术有限公司 | Flexible thin-film transistor, and manufacturing method thereof |
US10651312B2 (en) | 2017-05-16 | 2020-05-12 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible thin film transistor and method for fabricating the same |
CN107591359A (en) * | 2017-08-15 | 2018-01-16 | 深圳市华星光电技术有限公司 | The method of adhesiveness between array base palte and preparation method thereof, raising film layer |
CN113113475A (en) * | 2021-04-08 | 2021-07-13 | 合肥京东方显示技术有限公司 | Thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device |
Also Published As
Publication number | Publication date |
---|---|
TWI297544B (en) | 2008-06-01 |
US20050230685A1 (en) | 2005-10-20 |
CN100490179C (en) | 2009-05-20 |
KR100660359B1 (en) | 2006-12-21 |
JP4299717B2 (en) | 2009-07-22 |
US7476898B2 (en) | 2009-01-13 |
KR20060045688A (en) | 2006-05-17 |
JP2005303119A (en) | 2005-10-27 |
TW200539455A (en) | 2005-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1684273A (en) | Thin film transistor and its producing method | |
CN1655039A (en) | Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor | |
CN101064345A (en) | Thin film transistor and method of fabricating the same | |
CN1577772A (en) | Method of fabricating bottom-gated polycrystalline silicon thin film transistor | |
CN1992201A (en) | Method for forming semiconductor device having fin structure | |
US10431694B2 (en) | Thin film transistor, display apparatus having the same, and fabricating method thereof | |
CN1728403A (en) | Switching element of pixel electrode, and manufacturing method | |
CN1855393A (en) | Thin film transistor and method of fabricating the same | |
CN100339964C (en) | Method for making MOS having light doped drain electrode | |
CN1783458A (en) | Method for manufacturing a display device and method for forming a pattern | |
CN1079993C (en) | Method of forming capacitor over semiconductor substrate | |
CN112397573A (en) | Array substrate, preparation method thereof and display panel | |
CN1740882A (en) | Array base plate for liquid crystal display and producing method thereof | |
CN1154174C (en) | Manufacture of planar display | |
EP2357672A1 (en) | Semiconductor layer and method for forming same | |
CN100345310C (en) | Thin-film transistor and method for making same | |
CN1877432A (en) | Pixel structure of panel display device and method for fabricating same | |
CN101055892A (en) | Thin film transistor and its making method | |
CN1705086A (en) | Method of manufacturing semiconductor device having multiple gate oxide films | |
CN1118102C (en) | Insulating gate type semiconductor device and method of fabricating the same | |
CN1585137A (en) | Asymmetric thin-film transistor structure | |
CN1992183A (en) | Method for fabricating a transistor using a soi wafer | |
KR20070050572A (en) | Method for fabricating of thin film transistor substrate | |
CN110676222A (en) | Manufacturing method of display substrate, display substrate and display device | |
CN1231949C (en) | Method for forming grid structure and autoregistered contact hole structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NIPPON ELECTRIC CO., LTD. Free format text: FORMER OWNER: NEC LCD TECHNOLOGY CO.,LTD Effective date: 20100611 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KAWASAKI-SHI, KANAGAWA-KEN, JAPAN TO: TOKYO, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100611 Address after: Tokyo, Japan Patentee after: NEC Corp. Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC LCD Technologies, Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: JINZHEN CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20130423 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130423 Address after: Samoa Apia hiSoft Center No. 217 mailbox Patentee after: Jinzhen Co.,Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20230506 Address after: Floor 4, No. 15, Lane 168, Xingshan Road, Neihu District, Taipei City, Taiwan, China, 114762, China Patentee after: HANNSTAR DISPLAY Corp. Address before: Samoa Apia, hiSoft center, No. 217 mailbox Patentee before: Jinzhen Co.,Ltd. |
|
TR01 | Transfer of patent right |