CN1682433A - Lc振荡器 - Google Patents

Lc振荡器 Download PDF

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CN1682433A
CN1682433A CN03822181.0A CN03822181A CN1682433A CN 1682433 A CN1682433 A CN 1682433A CN 03822181 A CN03822181 A CN 03822181A CN 1682433 A CN1682433 A CN 1682433A
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oscillator
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transistor
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pmos
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J·H·A·布雷克曼斯
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes

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  • Oscillators With Electromechanical Resonators (AREA)

Abstract

一种LC振荡器(1)，包括耦合到一对电容器(Cva，Cvb)和一对电感(La，Lb)的交叉耦合的PMOS晶体管对(Ma，Mb)。为了增强所述振荡器的信号放大，提供了一对耦合在每个PMOS晶体管的漏极、并且最好是源极之间的辅助晶体管电路(Qa，Qb；Na，Nb)。所述电容器(Cva，Cvb)最好是可变电容器，所述电感(La，Lb)最好接地以允许扩大的调谐电压范围。

Description

LC振荡器
技术领域
本发明涉及一种LC振荡器。更特别地是，本发明涉及一种用于产生振荡器信号的LC振荡器，该振荡器包括包含第一和第二电容器以及第一和第二电感的谐振电路，用于确定所述振荡器信号的频率，和包括第一和第二PMOS晶体管的有源电路，用于放大所述振荡器信号，每个所述晶体管的栅极直接耦合到另一个晶体管的漏极，以便提供直接交叉耦合的晶体管对，其中该有源电路耦合到所述谐振电路。
背景技术
上述定义的这种类型的振荡器在美国专利US6281758中公开。在US6281758的振荡器中，谐振电路被标注为“变容二极管调谐电路”，电容器由压控电容器构成，也称作变容二极管。电感和电容器直接耦合到有源电路的交叉耦合的PMOS晶体管。连接两个电感的节点连接到包含一个依次接地的NMOS晶体管的缓冲电路。
由于MOS晶体管的噪声特性和从饱和区到线性操作区的平滑变换，在设计LC振荡器时MOS(金属氧化物半导体)晶体管(也称作MOSFETs)优先于双极性晶体管。US6281758的振荡器使用一对PMOS(p沟道MOS)晶体管，其与传统应用的NMOS(n沟道MOS)晶体管相比，引起相当低的闪变(1/f)噪声和较好的衬底绝缘。然而，已经发现，对于给定的偏置电流，PMOS晶体管的跨导约是NMOS对应物的跨导的一半，这导致较低的振荡器信号增益。
发明内容
本发明的一个目的是提供一种如序言中所定义的LC振荡器，其具有改进的振荡器信号增益，同时又保持了PMOS晶体管的有利属性。
因此，如上定义的根据本发明的振荡器其特征在于该振荡器还包括第一和第二辅助晶体管电路，用于进一步放大所述振荡器信号，每个所述辅助晶体管电路分别具有耦合到第一和第二PMOS晶体管的漏极的输入端。
也就是说，将辅助晶体管电路添加到LC振荡器中以改进其增益，同时保留振荡器的基本结构未受影响。特别是，不改变交叉耦合的PMOS晶体管的配置。替代为，辅助晶体管电路实际上外接到交叉耦合的PMOS晶体管对，并以对振荡器的基本噪声属性没有不利影响这样一种方式耦合。
在一个优选实施例中，第一和第二辅助晶体管电路每个都分别具有耦合到第一和第二PMOS晶体管的源极的输出端。也就是说，辅助晶体管电路每个都耦合在PMOS晶体管的漏极与源极之间。更可取地是，第一和第二辅助晶体管电路的输出端通过耦合电容器耦合到PMOS晶体管的源极。
在一个特别有利的实施例中，第一和第二PMOS晶体管每个都提供有一个与各个辅助晶体管电路的输出端耦合的背栅(back gate)。这提供了帮助振荡器信号放大的附加信号通道。
在一个可选的实施例中，第一和第二辅助晶体管电路每个都分别与第一和第二PMOS晶体管串联连接。也就是说，它们最好直接耦合到各个PMOS晶体管的源极。
虽然辅助晶体管电路的输出端最好耦合到PMOS晶体管(的源极)，但是也可以想到第一和第二辅助晶体管电路每个都具有耦合到谐振电路的输出端。
第一和第二辅助晶体管电路每个都可以包括双极性晶体管、MOS晶体管或是包括两者。更可取地是，这种MOS晶体管为NMOS晶体管。
更可取地是，第一和/或第二电容器是可变电容器。这允许振荡器的频率得到调节。但是，也可以使用具有固定值的电容器。
根据本发明重要的另一个方面，谐振电路最好直接接地。这是在其中谐振电路包含可变电容器的实施例中尤为有利的。这种电容器需要一个调谐电压，其在谐振电路接地时可以比在谐振电路的其他可能的情况下在更宽的范围内变化。因此获得了较宽的频率调谐范围。此外，可变电容器的(阳极)端因而提供有接地的直流DC，这导致具有非常低的噪声的调谐电压和因此具有高光谱纯度的振荡器信号。
谐振电路直接接地还会影响非可调谐的LC振荡器，即具有固定电容值的振荡器。
本发明还提供了一种包括如上定义的LC振荡器的集成电路，以及包括如上定义的LC振荡器的设备。本发明的振荡器特别适合其中使用相对低的电源电压的应用。可以有利地使用本发明的振荡器的典型设备有，但不局限于电视调谐器、频道转换器以及类似的电信设备。
附图说明
以下将参照附图中所示的典型实施例对本发明进行进一步的说明，附图中：
图1示意性地说明了根据本发明的振荡器的第一实施例。
图2示意性地说明了根据本发明的振荡器的第二实施例。
图3示意性地说明了根据本发明的振荡器的第三实施例。
图4示意性地说明了根据本发明的振荡器的第四实施例。
具体实施方式
在图1中通过非限制性举例所示的振荡器1包括谐振电路、有源电路和两个辅助晶体管电路。谐振电路(其也可以称作储能电路)包括串联连接的第一电感La和第二电感Lb，以及串联连接的第一电容器Cva和第二电容器Cvb，其与电感并联以便形成闭合回路。电容器Cva和Cvb都是可变电容器并且在其公共节点接收调谐电压。电感的公共节点被示意为接地，正如将在后面详细说明的那样。
有源电路包括两个交叉耦合的PMOS晶体管Ma和Mb，即晶体管Mb的栅极连接到晶体管Ma的漏极，而晶体管Ma的栅极连接到晶体管Mb的漏极。第一和第二PMOS晶体管Ma和Mb的漏极还分别耦合到第一和第二电容器Cva，Cvb以及第一和第二电感La，Lb。PMOS晶体管Ma和Mb的源极连接到提供(相同)偏置电流的电流源。
根据本发明，振荡器电路1还包括两个分别包含晶体管Qa和Qb的辅助晶体管电路(或辅助放大电路)。这些晶体管Qa和Qb被示意为双极性npn型晶体管，每个都具有通过耦合电容器CBa，CBb耦合到各个PMOS晶体管的漏极的基极。连接耦合电容器CBa，CBb到PMOS晶体管Ma，Mb的节点构成各个辅助晶体管电路的输入端，而输出端由连接另外的耦合电容器CEa，CEb到PMOS晶体管Ma，Mb的源极的节点构成。该另外的耦合电容器CEa，CEb连接到晶体管Qa，Qb的发射极，从而形成射极跟随电路。
同时连接到晶体管Qa，Qb的发射极的是PMOS晶体管Ma，Mb的背栅。背栅或“大容量连接(bulk connection)”是寄生MOS晶体管端，其提供对信号控制的进一步的机会。
正如从图1中可以看到的，图1的LC振荡器1的基本结构等同于从现有技术中所知的结构。然而，包括晶体管Qa和Qb的辅助晶体管电路提供附加的增益。该附加的增益在不影响基本振荡器电路的良好噪声特性的情况下获得。
如上所述，图1的实施例中的谐振电路(Cva，Cvb，La，Lb)直接接地。这允许输送给可变电容器(变容二极管)Cva，Cvb的调谐电压Vtun范围从电源电压Vcc到偏置变容二极管所需的大约为0.3V的最低电压。该调谐范围实际上比现有技术中LC振荡器的调谐范围大，在现有的LC振荡器中，谐振电路典型地是在电源电压与接地之间的范围内的电压。使用AC耦合人工地使可变电容器的阳极端接地的方式对光谱纯度和频率调谐范围都具有有害的影响。因此，本发明的振荡器具有相当大的调协范围。
在表示辅助晶体管电路的实例中，每个电路都包括单个双极性晶体管。但是，也可以代替双极性晶体管而使用MOS晶体管，或在每个辅助晶体管电路中使用多个晶体管。
虽然在图1中示出了本发明的振荡器1的优选实施例，但是也可以有其它可选的实施例。图2中示出了一种这种可选的实施例。该实施例类似于图1所示的实施例。但是，辅助晶体管电路的输出端没有连接到PMOS晶体管的源极而是代替为接地。因为在源极与漏极之间没有反馈回路，PMOS晶体管的源极相互连接，并且漏极通过辅助晶体管电路是可用的。两个双极性晶体管独立地添加到总放大中，以与公知的Collpits振荡器相同的方式起作用。与图1的实施例类似，PMOS晶体管的背栅可以有利地连接到双极性晶体管的各个发射极(未示出)。
在图3的实施例中，辅助晶体管Qa，Qb与PMOS晶体管Ma，Mb串联设置：Qa，Qb的发射极连接到Ma，Mb的源极。该实施例通过共享偏置电流(IDC)具有需求较少部件的优点，功率更为有效。图4的实施例基本上等同于图3的实施例，除了双极性晶体管Qa，Qb被NMOS晶体管Na，Nb替代。
从上述说明中将会很清楚，本发明是基于应当保留PMOS晶体管的有利噪声属性同时提供具有较高增益的LC振荡器的见解。较高的增益意味着本发明的振荡器的应用并不局限于具有高品质因数(高谐振阻抗)的谐振电路，而是也可以使用具有较低品质因数的谐振电路。此外，更加安全的裕量预防了在可由电源电压的变化、温度的变化和参数改变所引起的极端操作条件下没有发生任何振荡，参数的改变依次可由在包含所述振荡器的集成电路的制造过程的变化引起。本发明的LC振荡器保持基本振荡器结构完整无缺除了添加晶体管以提高信号增益。
应当注意在本文献中，单词“包括”并不意味着排除其它元件或步骤，并且单词“一”或“一个”也并不意味着排除多个。单个晶体管或其他电路元件也可以实现在权利要求中叙述的两个或多个电路元件或装置的功能。特别是，在权利要求中叙述的两个电感可以被适合的单个电感替代。相反地，附图中所示的单个晶体管Qa，Qb，Na和/或Nb每一个也都可以被由两个或多个晶体管构成的晶体管电路替代。
因此那些本领域普通技术人员将会理解，本发明并不局限于上面所述的实施例，而是在不脱离所附权利要求书中所定义的本发明的范围的情况下可以进行多种修改和添加。

Claims (13)

1.一种用于产生振荡器信号的LC振荡器，该振荡器包括：
谐振电路，包含第一和第二电容器以及第一和第二电感，用于确定所述振荡器信号的频率，和
有源电路，包括第一和第二PMOS晶体管，用于放大所述振荡器信号，每个所述晶体管的栅极直接耦合到另一个晶体管的漏极以便提供直接交叉耦合的晶体管对，
其中该有源电路耦合到所述谐振电路，其特征在于该振荡器还包括第一和第二辅助晶体管电路，用于进一步放大所述振荡器信号，每个所述辅助晶体管电路分别具有耦合到第一和第二PMOS晶体管的漏极的输入端。
2.根据权利要求1所述的LC振荡器，其中第一和第二辅助晶体管电路每个分别具有耦合到第一和第二PMOS晶体管的源极的输出端。
3.根据权利要求2所述的LC振荡器，其中第一和第二辅助晶体管电路的输出端通过耦合电容器耦合到PMOS晶体管的源极。
4.根据权利要求3所述的LC振荡器，其中第一和第二PMOS晶体管每个都提供有一个与各个辅助晶体管电路的输出端耦合的可控背栅。
5.根据权利要求3所述的LC振荡器，其中第一和第二辅助晶体管电路分别与第一和第二PMOS晶体管串联连接。
6.根据权利要求1所述的LC振荡器，其中第一和第二辅助晶体管电路每个都具有耦合到所述谐振电路的输出端。
7.根据前面任何一项权利要求所述的LC振荡器，其中第一和第二辅助晶体管电路包括双极性晶体管。
8.根据前面任何一项权利要求所述的LC振荡器，其中第一和第二辅助晶体管电路包括MOS晶体管，最好是NMOS晶体管。
9.根据前面任何一项权利要求所述的LC振荡器，其中第一和/或第二电容器是可变电容器。
10.根据前面任何一项权利要求所述的LC振荡器，其中所述谐振电路直接接地。
11.一种集成电路，包括根据前面任何一项权利要求所述的LC振荡器。
12.一种包括用于产生振荡器信号的LC振荡器的设备，所述振荡器包括：
谐振电路，包含第一和第二电容器以及第一和第二电感，用于确定所述振荡器信号的频率，和
有源电路，包括第一和第二PMOS晶体管，用于放大所述振荡器信号，每个所述晶体管的栅极直接耦合到另一个晶体管的漏极以便提供直接交叉耦合的晶体管对，
其中该有源电路耦合到所述谐振电路，其特征在于该振荡器还包括第一和第二辅助晶体管电路，用于进一步放大所述振荡器信号，每个所述辅助晶体管电路分别具有耦合到第一和第二PMOS晶体管的漏极的输入端。
13.根据权利要求12所述的设备，其为电视或电信设备。
CNB038221810A 2002-09-20 2003-08-08 Lc振荡器 Expired - Fee Related CN100438324C (zh)

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US7176766B2 (en) 2007-02-13
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AU2003253183A1 (en) 2004-04-08
US20050212610A1 (en) 2005-09-29

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