CN1646649A - 研磨基材的方法及组合物 - Google Patents

研磨基材的方法及组合物 Download PDF

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Publication number
CN1646649A
CN1646649A CNA038079402A CN03807940A CN1646649A CN 1646649 A CN1646649 A CN 1646649A CN A038079402 A CNA038079402 A CN A038079402A CN 03807940 A CN03807940 A CN 03807940A CN 1646649 A CN1646649 A CN 1646649A
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CN
China
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acid
volume
weight
composition
total composition
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038079402A
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English (en)
Chinese (zh)
Inventor
刘凤全
蔡东辰
胡永其
梁秀仙
王彦
杜布斯特·艾伦
陈良毓
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN1646649A publication Critical patent/CN1646649A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA038079402A 2002-02-26 2003-02-26 研磨基材的方法及组合物 Pending CN1646649A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35974602P 2002-02-26 2002-02-26
US60/359,746 2002-02-26

Publications (1)

Publication Number Publication Date
CN1646649A true CN1646649A (zh) 2005-07-27

Family

ID=27766131

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038079402A Pending CN1646649A (zh) 2002-02-26 2003-02-26 研磨基材的方法及组合物

Country Status (6)

Country Link
EP (1) EP1478708A1 (enExample)
JP (1) JP2005518670A (enExample)
KR (1) KR20040093725A (enExample)
CN (1) CN1646649A (enExample)
TW (1) TWI307356B (enExample)
WO (1) WO2003072672A1 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110508B2 (en) 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN102403212A (zh) * 2010-09-17 2012-04-04 长兴开发科技股份有限公司 硅通孔晶片的抛光方法和用于该方法的抛光组合物
CN102634840A (zh) * 2012-05-02 2012-08-15 浙江大学 锆合金的电化学抛光电解液及其电化学抛光方法
CN104023889A (zh) * 2011-12-06 2014-09-03 国立大学法人大阪大学 固体氧化物的加工方法及其装置
CN104404611A (zh) * 2014-11-28 2015-03-11 江门市瑞期精细化学工程有限公司 一种铜合金表面镀层的电解剥离剂及其制备方法
CN105209567A (zh) * 2013-03-15 2015-12-30 嘉柏微电子材料股份公司 具有低的固体物含量的化学机械抛光组合物及与其相关的方法
CN105273638A (zh) * 2015-10-14 2016-01-27 盐城工学院 氧化镓晶片抗解理悬浮研磨液及其制备方法
TWI568842B (zh) * 2014-08-19 2017-02-01 富士軟片平面解決方案有限責任公司 降低硏磨漿料中之大顆粒數之技術
CN109648165A (zh) * 2018-12-13 2019-04-19 大连理工大学 一种铜微细电解射流加工的电解液及其配制和使用方法
CN110524408A (zh) * 2019-09-12 2019-12-03 江苏吉星新材料有限公司 一种蓝宝石晶片研磨方法
CN113201285A (zh) * 2021-04-29 2021-08-03 安徽应友光电科技有限公司 一种cvd设备背板精密研磨液、制备工艺及加工方法
CN114456717A (zh) * 2017-03-29 2022-05-10 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
WO2023124977A1 (zh) * 2021-12-28 2023-07-06 广东省科学院化工研究所 一种用于金属件电解抛光的固体颗粒物
US20240035192A1 (en) * 2021-03-29 2024-02-01 The 13Th Research Institute Of China Electronics Technology Group Corporation Polishing Device for Indium Phosphide Substrate, and Polishing Process

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US7112121B2 (en) 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7134934B2 (en) 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7112122B2 (en) 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7125324B2 (en) * 2004-03-09 2006-10-24 3M Innovative Properties Company Insulated pad conditioner and method of using same
US20050263407A1 (en) * 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same
US7582127B2 (en) 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
US20060163083A1 (en) * 2005-01-21 2006-07-27 International Business Machines Corporation Method and composition for electro-chemical-mechanical polishing
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR100772929B1 (ko) 2005-10-18 2007-11-02 테크노세미켐 주식회사 구리 다마신 공정용 화학-기계적 연마 슬러리 조성물
FI120793B (fi) * 2006-01-25 2010-03-15 Coefa Company Ltd Oy Menetelmä tykin putken puhdistamiseksi
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
TWI575040B (zh) * 2011-03-18 2017-03-21 長興開發科技股份有限公司 可用於拋光矽通孔晶圓之拋光組成物及其用途
EP3112436A4 (en) * 2014-02-26 2017-02-22 Fujimi Incorporated Polishing composition
WO2020251800A1 (en) * 2019-06-13 2020-12-17 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2024203916A1 (ja) * 2023-03-30 2024-10-03 株式会社フジミインコーポレーテッド 研磨用組成物
WO2024203917A1 (ja) * 2023-03-30 2024-10-03 株式会社フジミインコーポレーテッド 研磨用組成物

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US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
KR20010042616A (ko) * 1998-04-10 2001-05-25 페로 코포레이션 금속 표면의 화학적-기계적 연마용 슬러리
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
WO2001077241A2 (en) * 2000-04-05 2001-10-18 Applied Materials, Inc. Composition for metal cmp with low dishing and overpolish insensitivity

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8395270B2 (en) 2007-11-22 2013-03-12 Samsung Electronics Co., Ltd. Etching composition for an under-bump metallurgy layer
US8110508B2 (en) 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN102403212A (zh) * 2010-09-17 2012-04-04 长兴开发科技股份有限公司 硅通孔晶片的抛光方法和用于该方法的抛光组合物
CN104023889B (zh) * 2011-12-06 2017-04-12 国立大学法人大阪大学 固体氧化物的加工方法及其装置
CN104023889A (zh) * 2011-12-06 2014-09-03 国立大学法人大阪大学 固体氧化物的加工方法及其装置
CN102634840B (zh) * 2012-05-02 2014-08-13 浙江大学 锆合金的电化学抛光电解液及其电化学抛光方法
CN102634840A (zh) * 2012-05-02 2012-08-15 浙江大学 锆合金的电化学抛光电解液及其电化学抛光方法
CN105209567A (zh) * 2013-03-15 2015-12-30 嘉柏微电子材料股份公司 具有低的固体物含量的化学机械抛光组合物及与其相关的方法
CN105209567B (zh) * 2013-03-15 2018-06-01 嘉柏微电子材料股份公司 具有低的固体物含量的化学机械抛光组合物及与其相关的方法
US10167415B2 (en) 2014-08-19 2019-01-01 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
TWI568842B (zh) * 2014-08-19 2017-02-01 富士軟片平面解決方案有限責任公司 降低硏磨漿料中之大顆粒數之技術
US9914852B2 (en) 2014-08-19 2018-03-13 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
CN104404611A (zh) * 2014-11-28 2015-03-11 江门市瑞期精细化学工程有限公司 一种铜合金表面镀层的电解剥离剂及其制备方法
CN105273638A (zh) * 2015-10-14 2016-01-27 盐城工学院 氧化镓晶片抗解理悬浮研磨液及其制备方法
CN114456717A (zh) * 2017-03-29 2022-05-10 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
CN109648165A (zh) * 2018-12-13 2019-04-19 大连理工大学 一种铜微细电解射流加工的电解液及其配制和使用方法
CN110524408A (zh) * 2019-09-12 2019-12-03 江苏吉星新材料有限公司 一种蓝宝石晶片研磨方法
US20240035192A1 (en) * 2021-03-29 2024-02-01 The 13Th Research Institute Of China Electronics Technology Group Corporation Polishing Device for Indium Phosphide Substrate, and Polishing Process
CN113201285A (zh) * 2021-04-29 2021-08-03 安徽应友光电科技有限公司 一种cvd设备背板精密研磨液、制备工艺及加工方法
WO2023124977A1 (zh) * 2021-12-28 2023-07-06 广东省科学院化工研究所 一种用于金属件电解抛光的固体颗粒物

Also Published As

Publication number Publication date
KR20040093725A (ko) 2004-11-08
TWI307356B (en) 2009-03-11
EP1478708A1 (en) 2004-11-24
WO2003072672A1 (en) 2003-09-04
TW200416271A (en) 2004-09-01
JP2005518670A (ja) 2005-06-23

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Open date: 20050727