CN1638051A - 用于场效应晶体管的超薄高k栅介质的制作方法以及超薄高k栅介质 - Google Patents
用于场效应晶体管的超薄高k栅介质的制作方法以及超薄高k栅介质 Download PDFInfo
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- CN1638051A CN1638051A CNA2004100950087A CN200410095008A CN1638051A CN 1638051 A CN1638051 A CN 1638051A CN A2004100950087 A CNA2004100950087 A CN A2004100950087A CN 200410095008 A CN200410095008 A CN 200410095008A CN 1638051 A CN1638051 A CN 1638051A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/730,892 | 2003-12-10 | ||
US10/730,892 US7071122B2 (en) | 2003-12-10 | 2003-12-10 | Field effect transistor with etched-back gate dielectric |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638051A true CN1638051A (zh) | 2005-07-13 |
CN1329956C CN1329956C (zh) | 2007-08-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2004100950087A Expired - Fee Related CN1329956C (zh) | 2003-12-10 | 2004-11-18 | 用于场效应晶体管的超薄高k栅介质的制作方法以及超薄高k栅介质 |
Country Status (2)
Country | Link |
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US (2) | US7071122B2 (zh) |
CN (1) | CN1329956C (zh) |
Cited By (11)
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CN101295635B (zh) * | 2007-04-29 | 2010-05-19 | 中芯国际集成电路制造(上海)有限公司 | 改善mim电容容量的方法及装置 |
CN101924026A (zh) * | 2009-06-12 | 2010-12-22 | 台湾积体电路制造股份有限公司 | 降低界面层厚度的方法 |
CN101681925B (zh) * | 2007-06-19 | 2011-11-30 | 三星电子株式会社 | 氧化物半导体及包含该氧化物半导体的薄膜晶体管 |
CN102468157A (zh) * | 2010-11-10 | 2012-05-23 | 中国科学院微电子研究所 | 一种高k栅介质的刻蚀方法 |
CN102789973A (zh) * | 2011-05-18 | 2012-11-21 | 中国科学院微电子研究所 | 界面层的形成方法 |
CN103474337A (zh) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | 制作高均匀度栅极线条的方法 |
CN104022018A (zh) * | 2014-06-19 | 2014-09-03 | 无锡宏纳科技有限公司 | 一种干法刻蚀等离子损伤修复工艺 |
CN104821276A (zh) * | 2014-01-30 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管的制作方法 |
CN107706086A (zh) * | 2017-07-31 | 2018-02-16 | 朱元勋 | 一种碳化硅衬底垂直结构簿膜电子器件及其制作方法 |
CN110233095A (zh) * | 2018-03-05 | 2019-09-13 | 中芯国际集成电路制造(上海)有限公司 | 栅介质层、场效应管的制造方法及场效应管器件 |
CN110504218A (zh) * | 2019-08-29 | 2019-11-26 | 长江存储科技有限责任公司 | 半导体器件的制造方法和形成cmos器件的方法 |
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US7382023B2 (en) * | 2004-04-28 | 2008-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully depleted SOI multiple threshold voltage application |
JP4040602B2 (ja) * | 2004-05-14 | 2008-01-30 | Necエレクトロニクス株式会社 | 半導体装置 |
US7592678B2 (en) * | 2004-06-17 | 2009-09-22 | Infineon Technologies Ag | CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof |
US20060068603A1 (en) * | 2004-09-30 | 2006-03-30 | Tokyo Electron Limited | A method for forming a thin complete high-permittivity dielectric layer |
US7504135B2 (en) * | 2005-02-03 | 2009-03-17 | Samsung Electronics Co., Ltd | Method of fabricating a manganese diffusion barrier |
US20060228898A1 (en) * | 2005-03-30 | 2006-10-12 | Cory Wajda | Method and system for forming a high-k dielectric layer |
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US7521376B2 (en) * | 2005-10-26 | 2009-04-21 | International Business Machines Corporation | Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment |
JP5177954B2 (ja) * | 2006-01-30 | 2013-04-10 | キヤノン株式会社 | 電界効果型トランジスタ |
US7816253B2 (en) * | 2006-03-23 | 2010-10-19 | International Business Machines Corporation | Surface treatment of inter-layer dielectric |
US7838428B2 (en) * | 2006-03-23 | 2010-11-23 | International Business Machines Corporation | Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species |
KR100785038B1 (ko) * | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | 비정질 ZnO계 TFT |
US20080076191A1 (en) * | 2006-09-22 | 2008-03-27 | Texas Instruments Incorporated | GCIB smoothing of the contact level to improve PZT films |
KR101509663B1 (ko) | 2007-02-16 | 2015-04-06 | 삼성전자주식회사 | 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법 |
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US8101501B2 (en) * | 2007-10-10 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7736965B2 (en) * | 2007-12-06 | 2010-06-15 | International Business Machines Corporation | Method of making a FinFET device structure having dual metal and high-k gates |
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KR101468591B1 (ko) * | 2008-05-29 | 2014-12-04 | 삼성전자주식회사 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
US7833891B2 (en) * | 2008-07-23 | 2010-11-16 | International Business Machines Corporation | Semiconductor device manufacturing method using oxygen diffusion barrier layer between buried oxide layer and high K dielectric layer |
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US7785978B2 (en) * | 2009-02-04 | 2010-08-31 | Micron Technology, Inc. | Method of forming memory cell using gas cluster ion beams |
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2006
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US20050127417A1 (en) | 2005-06-16 |
CN1329956C (zh) | 2007-08-01 |
US7071122B2 (en) | 2006-07-04 |
US20060189083A1 (en) | 2006-08-24 |
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