CN1636277A - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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CN1636277A
CN1636277A CNA028170342A CN02817034A CN1636277A CN 1636277 A CN1636277 A CN 1636277A CN A028170342 A CNA028170342 A CN A028170342A CN 02817034 A CN02817034 A CN 02817034A CN 1636277 A CN1636277 A CN 1636277A
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蒂罗·史托尔哲
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Youpei Co ltd
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Abstract

功率半导体模块(1)包括位于基材(2)上的半导体组件(6、7、8)，本发明的目标乃在防止基材抵抗一冷却表面的压力降低，及因变形引起的冷却结果损失。达成此目标，俾基材(2)包含数基材区域(3、4、5)并使一或数连接区域(31、32)位于基材区域(3、4、5)间，藉此，该等基材区域乃如此连接，致彼此间可移动。

Description

功率半导体模块
本发明是关于一种具多个字于基材上的半导体组件的功率半导体模块。
此型式的模块被揭示于如德国专利39 06 690 A1、德国专利199 42915 A1、德国专利197 07 514 A1及日本专利2001118987。
例如，于德国专利199 42 915 A1揭示的功率半导体模块的情况下，多个功率半导体被以列紧邻排列于绝缘及热传导载具(基材)的顶部侧。该功率半导体藉由经由形成于该相同顶部侧的金属导体轨迹的接触区域而被电连接，及可以此方式驱动。
同样地该基材的金属如铜涂覆，底面藉由电传导压块被压在散热器，在该功率半导体模块的操作期间以热型式发生的热损失由这些装置消散。为确保热的有效消散或低的热传阻力及因而该功率半导体模块的安全的及可靠的操作，该散热器必须以平面方式承载该基材的底面且没有任何缝隙。
在此情况下的问题为因各种模块成分(如基材及半导体材料)的不同热膨胀是数及低弯曲刚性所产生的在该模块的机械应力。内部应力亦可得自该功率半导体模块的高温制造方法及可藉由后续焊接步骤被额外加强。
在此情况下机械应力及/或该低弯曲刚性造成在该基材或模块的底面的不欲的变形或弯曲。之后均匀地平的接触面积不再被确保，因为在冷却组件间的热传及冷却因空气缝隙及空间(其因变形而产生)而被损伤。前述影响无法被补偿特别是在该基材未直接压在，或是完全不足地压在该散热器，如在于该模块中央的边缘固定的情况，因弯曲(区度)于那里为最大，而且，模块愈大，影响明显为至更大程度，该模块的尺寸必然随该功率增加。
为解决此问题区域，可理解提供一额外金属部份-如铜板-做为基板，该基材的底面固定地连接(如焊接)于此基板上。现有形式偏差接着由焊剂的插入层补偿。该基板接着由其底面被连接至该散热器及用做热的均匀分布(一般称为散热层)及用做吸收机械应力。
然而，由于该额外基板及其装设，此结构增加以此方式建构的功率半导体模块的总成本。
所以，本发明是基于提供一种可以具与冷却组件的满意热接触被成本有效地制造的功率半导体模块的目的，且此功率半导体模块不需额外基板。
在于简介中所提及型式的功率半导体模块的情况下，此目的因该基材具多个基材区域的事实而根据本发明达到，且一或多个连接区域位于基材区域之间，经由此连接区域，该基材区域被连接使得它们可相对于彼此移动。
本发明的一个基本方向为该半导体组件及若合适，进一步组件，的装置未于单一、整合基材上产生，而是在多个基材区域(部份基材)间分布，结果为，每一个个别部份基材可被较佳地压向冷却区域及因而被较佳地冷却。
而且，虽然每一个个别部份基材同样地经验因先前所叙述的温度决定应力及热作用所引起的变形，该变形显著小于相对应面积的单一整体基材所会有的变形。换言之：该在一些情况的无法避免的变形在多个部份基材间及因而相对应地在较小部份基材间分割，其绝对变形最大显著较小。
当基材的尺寸增加，基材变得对裂痕及损伤更为敏感，所以，本发明的一个优点在于具其多个个别基材区域的根据本发明功率半导体模块显著更为机械坚固的事实，此有力地增加在制造及装设方法的产量。
本发明的进一步优点在于具繁多半导体组件的该个别基材区域可被预先个别地测试及在缺陷时可被置换。关于完工模块的废品可以成本有效的方式被最小化。
此会伴随着产量的进一步增加，因为在缺陷基材区域的情况下，若合适已装设的组件伴随功率半导体模块的整个基材材料，不需被废弃。
本发明的进一步基本方向可在该基材区域被连接使得经由一或多个连接区域位于基材区域它们可相对于彼此移动的事实了解。该个别连接区域具较该基材一般具有的为高的机械变形能力(弹性)，如此，当其为枢纽或或者关节区域形成于该基材区域之间。连接区域防止该基材区域在相邻基材区域具往复机械影响。
而且，在每一个连接区域，存在以变形被最小化的方式执行该个别基材区域的位向的修正的可能性，及结果，该功率半导体模块的平面接触区域被形成，其提供至要被连接的散热器的最适热传。
根据本发明，该功率半导体模块在该基材区域间的区域额外具一壳体，此壳体具该连接区域的机械压力施用的作用点，该壳体施用压力至该个别基材区域。
特别是该连接区域的机械压力施用的作用点确保至要被连接至该功率半导体模块的装置区域(底面)的冷却组件间的特别良好的热传导。
在此情况下，该作用点可为如在壳体的凹陷，其使得外部机械压力装置(如拉力螺栓)伸向该基材平面。然而，在该壳体内，亦可能提供压力板，其将外部地作用于该壳体的压力前馈至该作用点。
而且，根据本发明，该壳体以有弹性的方式被具体化，特别是在机械压力施用的作用点之间的部份，此确保个别地在每一个个别部份基材上的接触压力，该个别部份基材由该作用点(如藉由螺丝、夹子、铰钉等)被机械地分开，该作用点本身不直接施用压力于该部份基材。
根据本发明半导体模块的有利发展藉由在该基材材料的凹部提供要被形成的该连接区域，以制造技术观点，此表示提供具增加的移动性或可变形能力的连接区域的特别简单可能性。此凹部可由如穿孔形成。
以制造技术观点，特佳为该材料凹部被开狭缝。
较佳为，该基材可由陶瓷组成，此允许该半导体组件与装设于该基材的电连接的优异电绝缘及经由该陶瓷至该散热器的热消散。在此情况下，热传导浆液可被引入基材及散热器之间。
而且，较有利为若壳体，至少在该基材区域的区域，为使得其以弹力作用于该基材区域上。结果为，压力个别地施用于每一个部份基材。
本发明示例具体实施例参考图标更详细说于于下；在图式中，图式地：
第1图以截面区段显示根据本发明功率半导体模块的第一示例具体实施例，
第2图以平面视图显示第1图的功率半导体模块的基材，
第3图以截面区段显示根据本发明功率半导体模块的第二示例具体实施例，及
第4图以平面区段显示第3图的功率半导体模块的基材。
于第1图所示的功率半导体模块1包括陶瓷基材(载具组件)2，其被区分为数个基材区域(部份基材)3、4及5及如同其具三个区段S(第2图)。在基材区域3、4及5上放置的是半导体组件6、7及8，其皆为整体模块1的所有构成成分，该半导体组件经由所显示的连结电线接触连接至导体轨迹(未特定说明)，其是形成于该部份基材的个别表面12、13、14，不同部份基材的导体轨迹可经由连结电线彼此电连接，该导体轨迹产生该功率半导体外部连接的接触端口(连接端口)，16、17、18。该半导体组件6、7及8可为功率半导体，其发展转化为热的高功率损失及因而需要有效热逸散。
该半导体模块进一步包括有弹性的，亦即相对应弹性，以塑料射出成型方法制造的模块壳体20。该部份基材3、4、5的后侧22、23、24形成该模块底面25的部份区域，其被制作的尽可能平面以与散热器28热接触及以热传导浆液施用于其。多个部份基材的使用用以实现平面具体实施例。若仅单一基材被使用，在其上所有半导体组件必须被放置及因而必须具所有部份基材的总装设面积，在一方面，由已在制造方法显示的热负荷的实例得到的内部机械应力具重要影响及，在另一方面，满意的热接触未被得到及所以该基材的冷却未被确保。
在根据本发明半导体模块的情况下，该应力仅导致小的变形，因为它们被分布于多个部份基材之间及因为该个别部份基材的较小绝对程度，每一个部份基材仅具相当些微影响。
除了该基材区域3、4及5，基材2具形成于该基材区域间的连接区域30及31(亦参看第2图)，该基材区域3及4被连接使得它们可相对于彼此移动，如经由该连接区域30。该连接区域30用做关节区域或者枢纽，故该基材区域3及4亦被相对于彼此指向以形成非180°的角(校正角)。做为实例，此防止该基材区域3持续进入该基材区域4的变形。做为实例，若该基材区域3因热诱发应力所造成的变形而相关于水平H倾斜角度α(以更放大及夸大的方式说明于第1图)，藉由以相反方式相对应倾斜该基材区域4可避免该角度α进入该基材区域4的传播及甚至藉由相等及相反的倾斜补偿该倾斜。可自由地自因热诱发应力所造成的变形至最大可能程度的模块底面25因而被提供做为该功率半导体模块的接触区域。
根据第2图，做为实例，该连接区域30及31由被引入该起始基材材料的插槽33、34形成。然而，该连接区域的其它几何型式及结构亦为可理解的，其以相同方式产生该连接区域相关于该起始基材的增加弹性。
该壳体20具进入区域35、36，经由此，例如藉由外部夹子或螺丝连接，机械压力(以箭头P符号化)可直接施用于该连接区域30、31以均匀地将该基材压于该散热器28，其它机械接触压力可被施用于在该功率半导体模块的边缘区域的接触-压力点AP上，如由其它箭头P表示。
第3图以截面区段图式地显示根据本发明功率半导体模块101的变化，因此，多个稠密的基材区域(部份基材)103、104、105(其已广泛地叙述于第1图)，形成基材102的区段S(参考第4图)。不同部份基材的导体轨迹可经由连结电线108、109彼此电连接，此处亦然，该基材区域的底面形成该半导体模块125的部份区域，其被制做为平面的以与散热器128热接触。
根据第4图，该连接区域130及131由被引入该起始基材材料的插槽133、134形成。有弹性的壳体120具进入区域135、136于其顶部侧140，例如经由外部夹子或螺丝连接施用于该进入区域135、136的机械压力(以箭头P符号化)由壳体-内部活塞或垂直桥150、151被传送于该连接区域130、131。结果，该基材101以高度均匀方式被压于该散热器128，其它机械接触压力可被施用于在该功率半导体模块的边缘区域的接触-压力点AP上，如由其它箭头P表示。
特别有利的效用因而藉由接触表面由个别在每一个部份基材的壳体施用的事实达到，该作用点及个别部份基材被机械地彼此分开，因而该作用点本身不施用直接压力于该基材区域。

Claims (5)

1.一种功率半导体模块(1)，其具多个字于基材(2)的半导体组件(6、7、8)，
该基材(2)具多个基材区域(3、4、5)及
一个或多个连接区域(30、31)是位于基材区域(3、4、5)之间，经由此连接区域，该基材区域(3、4、5)被连接使得它们可相对于彼此移动，其特征在于：
该功率半导体模块(1)具一壳体(20、120)，其在该基材区域(31、32)之间的区域具该连接区域的机械压力施用的作用点(35、36)，以及
该壳体(20、120)施用压力至该个别基材区域(3、4、5)。
2.根据权利要求1所述的功率半导体模块，其特征在于：
该连接区域(31、32)是由在该基材(2)材料的凹部形成。
3.根据权利要求2所述的功率半导体模块，其特征在于：
该材料凹部(33、34)被开狭缝。
4.根据权利要求1、2或3所述的功率半导体模块，其特征在于：
该基材(2)为陶瓷。
5.根据权利要求1、2、3或4所述的功率半导体模块，其特征在于：
该壳体(20、120)，至少在该基材区域(3、4、5)的区域，为使得其以弹力作用于该基材区域(3、4、5)上。
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