CN1630111A - 垂直结构的半导体芯片或器件(包括高亮度led)及其批量生产方法 - Google Patents
垂直结构的半导体芯片或器件(包括高亮度led)及其批量生产方法 Download PDFInfo
- Publication number
- CN1630111A CN1630111A CNA2004100738411A CN200410073841A CN1630111A CN 1630111 A CN1630111 A CN 1630111A CN A2004100738411 A CNA2004100738411 A CN A2004100738411A CN 200410073841 A CN200410073841 A CN 200410073841A CN 1630111 A CN1630111 A CN 1630111A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
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- 230000012010 growth Effects 0.000 claims description 86
- 238000013517 stratification Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000005457 optimization Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 238000007738 vacuum evaporation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000005253 cladding Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 12
- 238000000926 separation method Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/862,086 US7148075B2 (en) | 2004-06-05 | 2004-06-05 | Vertical semiconductor devices or chips and method of mass production of the same |
US10/862,086 | 2004-06-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1630111A true CN1630111A (zh) | 2005-06-22 |
CN100578825C CN100578825C (zh) | 2010-01-06 |
Family
ID=34862176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200410073841A Expired - Fee Related CN100578825C (zh) | 2004-06-05 | 2004-09-06 | 垂直结构的半导体芯片或器件(包括高亮度led)及其批量生产方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7148075B2 (zh) |
CN (1) | CN100578825C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100386898C (zh) * | 2005-06-27 | 2008-05-07 | 金芃 | 导电和绝缘准氧化锌衬底及垂直结构的半导体发光二极管 |
CN100418241C (zh) * | 2005-12-10 | 2008-09-10 | 金芃 | 垂直结构的半导体芯片或器件的批量生产方法 |
CN101488539B (zh) * | 2008-01-17 | 2010-12-08 | 晶元光电股份有限公司 | 发光元件 |
CN101442096B (zh) * | 2006-08-23 | 2011-11-02 | 三星Led株式会社 | 垂直的氮化镓基发光二极管及其制造方法 |
CN105529382A (zh) * | 2016-01-20 | 2016-04-27 | 华灿光电(苏州)有限公司 | 一种红黄光的发光二极管外延片及芯片的制备方法 |
CN106784185A (zh) * | 2016-12-22 | 2017-05-31 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN106784223A (zh) * | 2016-12-22 | 2017-05-31 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN108198875A (zh) * | 2013-11-11 | 2018-06-22 | 密歇根大学董事会 | 装配薄膜光电子器件的工艺 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070093037A1 (en) * | 2005-10-26 | 2007-04-26 | Velox Semicondutor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
DE102007002416A1 (de) | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
US20090242929A1 (en) * | 2008-03-31 | 2009-10-01 | Chao-Kun Lin | Light emitting diodes with patterned current blocking metal contact |
KR101064082B1 (ko) * | 2009-01-21 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 |
CN101877377B (zh) * | 2009-04-30 | 2011-12-14 | 比亚迪股份有限公司 | 一种分立发光二极管的外延片及其制造方法 |
RU2459691C2 (ru) * | 2010-11-29 | 2012-08-27 | Юрий Георгиевич Шретер | Способ отделения поверхностного слоя полупроводникового кристалла (варианты) |
US9324905B2 (en) | 2011-03-15 | 2016-04-26 | Micron Technology, Inc. | Solid state optoelectronic device with preformed metal support substrate |
KR102002898B1 (ko) * | 2012-09-04 | 2019-07-23 | 삼성전자 주식회사 | 반도체 버퍼 구조체 및 이를 포함하는 반도체 소자 |
DE202018102407U1 (de) * | 2018-04-30 | 2019-07-31 | Tridonic Jennersdorf Gmbh | Flexibles optisches Bauelement mit strukturierter Oberfläche |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
JP3568112B2 (ja) | 1999-12-27 | 2004-09-22 | 豊田合成株式会社 | 半導体基板の製造方法 |
US6492625B1 (en) | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
TW550834B (en) * | 2002-02-15 | 2003-09-01 | United Epitaxy Co Ltd | Light emitting diode and its manufacturing method |
US20040021142A1 (en) * | 2002-07-30 | 2004-02-05 | Li-Hsin Kuo | Light emitting diode device |
JP2004266039A (ja) * | 2003-02-28 | 2004-09-24 | Shin Etsu Handotai Co Ltd | 発光素子及び発光素子の製造方法 |
-
2004
- 2004-06-05 US US10/862,086 patent/US7148075B2/en not_active Expired - Fee Related
- 2004-09-06 CN CN200410073841A patent/CN100578825C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100386898C (zh) * | 2005-06-27 | 2008-05-07 | 金芃 | 导电和绝缘准氧化锌衬底及垂直结构的半导体发光二极管 |
CN100418241C (zh) * | 2005-12-10 | 2008-09-10 | 金芃 | 垂直结构的半导体芯片或器件的批量生产方法 |
CN101442096B (zh) * | 2006-08-23 | 2011-11-02 | 三星Led株式会社 | 垂直的氮化镓基发光二极管及其制造方法 |
CN101488539B (zh) * | 2008-01-17 | 2010-12-08 | 晶元光电股份有限公司 | 发光元件 |
CN108198875A (zh) * | 2013-11-11 | 2018-06-22 | 密歇根大学董事会 | 装配薄膜光电子器件的工艺 |
CN105529382A (zh) * | 2016-01-20 | 2016-04-27 | 华灿光电(苏州)有限公司 | 一种红黄光的发光二极管外延片及芯片的制备方法 |
CN106784185A (zh) * | 2016-12-22 | 2017-05-31 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN106784223A (zh) * | 2016-12-22 | 2017-05-31 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN106784223B (zh) * | 2016-12-22 | 2019-05-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN106784185B (zh) * | 2016-12-22 | 2019-05-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100578825C (zh) | 2010-01-06 |
US20050269575A1 (en) | 2005-12-08 |
US7148075B2 (en) | 2006-12-12 |
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