CN1624886A - 制造晶体管和使用该晶体管的图像显示设备的方法 - Google Patents

制造晶体管和使用该晶体管的图像显示设备的方法 Download PDF

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CN1624886A
CN1624886A CNA2004100953456A CN200410095345A CN1624886A CN 1624886 A CN1624886 A CN 1624886A CN A2004100953456 A CNA2004100953456 A CN A2004100953456A CN 200410095345 A CN200410095345 A CN 200410095345A CN 1624886 A CN1624886 A CN 1624886A
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金男
李乙浩
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Samsung SDI Co Ltd
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Abstract

一种用于制造晶体管的方法，包括：在衬底上形成半导体层；在半导体层上形成第一绝缘膜；在第一绝缘膜上形成栅电极。本方法还包括：在半导体层中形成源极区域、沟道区域和漏极区域；在栅电极上形成第二绝缘膜。在第二绝缘膜上形成源电极和漏电极，并且分别耦合至源极区域和漏极区域。本方法还包括：通过接触孔将漏电极耦合至栅电极，该接触孔垂直地处于沟道区域的上方。

Description

制造晶体管和使用该晶体管的图像显示设备的方法
本申请要求于2003年11月24日在韩国知识产权局提交的韩国专利申请第10-2003-0083586号的优先权和利益，其全部内容归并于此以供参考。
技术领域
本发明涉及一种显示设备。更具体地说，本发明涉及用于改进有机EL(电致发光)显示设备的孔径比(aperture ratio)的方法。
背景技术
总体上，有机EL显示器电激励磷有机化合物发光，其电压驱动或电流驱动N×M有机发射单元以显示图像。有机发射单元包括：阳极，诸如氧化铟锡(ITO)；有机薄膜；阴极层(金属)。有机薄膜具有多层结构，包括发射层(EML)，电子输送层(ETL)，空穴输送层(HTL)，用于维持电子与空穴之间的平衡并改进发射效率。它还包括电子注入层(EIL)以及空穴注入层(HIL)。
用于驱动有机发射单元的方法包括无源(passive)矩阵方法和使用薄膜晶体管(TFT)的有源(active)矩阵方法。在无源矩阵方法中，阴极和阳极彼此交叉(即，穿越(cross over)或交汇(intersect with))，并且线是有选择地被驱动的。另一方面，在有源矩阵方法中，TFT耦合至每个ITO像素电极，从而由电容器的电容维持电压。按照被提供以对电容器中的电压编程的信号形式，有源矩阵方法分类为电压编程方法或电流编程方法。
对于常规的电压编程像素电路，由于TFT的阈值电压(VTH)以及由制造工艺的不一致而导致的载流子的移动的偏差，很难获得高灰度级。例如，当以3伏特(3V)的电压驱动TFT时，电压以小于12mV(＝3V/256)的间隔施加至TFT的栅极，以便表示8位(256)灰度级。因此，例如，如果因制造工艺的不一致而产生的TFT的阈值电压的偏差是100mV，则很难表示高灰度级。
为了补偿TFT的阈值电压的偏差，二极管连接(diode-connect)的补偿晶体管通常耦合至驱动晶体管的栅极。
二极管连接的晶体管表示该晶体管基本上进行与二极管相同的操作，并指示该晶体管具有彼此耦合的栅极和漏极，如图1A和1B所示。
图2示出了常规的二极管连接的晶体管的平面视图，图3示出了图2的关于A-B参考的横截面视图。
如图2和3所示，常规的二极管连接的晶体管包括：钝化层80；漏电极32，其接触漏极区域21；源电极22，其接触源极区域21；和栅电极10。延伸漏电极32至栅电极10，栅电极10和漏电极32通过第二绝缘膜70中的接触孔72耦合。由于二极管连接的晶体管所占有的区域扩大了，因此这种方法减小了有机EL显示设备的孔径比。
发明内容
在本发明的一个实施例中，用于制造晶体管的方法包括：在衬底上形成半导体层；在半导体层上形成第一绝缘膜；在第一绝缘膜上形成栅电极；在半导体层中形成源极区域、沟道区域和漏极区域；在栅电极上形成第二绝缘膜；在第二绝缘膜上形成源电极和漏电极，以通过第一和第二绝缘膜进行发射(project)，从而源电极和漏电极分别耦合至源极区域和漏极区域；通过绝缘膜中的接触孔将漏电极耦合至栅电极，其中接触孔形成在沟道区域上方。
在本发明的另一个实施例中，用于制造晶体管的方法包括：在衬底上形成半导体层；在半导体层上形成第一绝缘膜；在第一绝缘膜上形成栅电极；在半导体层中形成源极区域、沟道区域和漏极区域；在栅电极上形成第二绝缘膜；在第二绝缘膜上形成源电极和漏电极，以通过第一和第二绝缘膜进行发射，从而源电极和漏电极分别耦合至源极区域和漏极区域。漏电极至少覆盖部分沟道区域，漏电极和栅电极通过接触孔耦合。
在本发明的又一个实施例中，图像显示设备包括：多条数据线，用于传输数据流以显示图像信号；多条扫描线，用于传输选择信号；多个像素电路，形成在多个由数据线和扫描线限定的像素处，其中的像素电路包括：第一晶体管，具有第一电极和第二电极，在第一和第二电极之间有电容器，第一晶体管向第三电极输出相应于施加在第一和第二电极之间的电压的电流。显示元件耦合至第一晶体管的第三电极，以显示相应于所施加的电流量的图像。还提供了第二晶体管，该第二晶体管具有：第一电极，耦合至第一晶体管的第一电极；第二电极；和第三电极。第二晶体管是二极管连接的。图像显示系统还包括：开关，用于响应于施加到扫描线的选择信号而将施加到数据线的电压传输至第二晶体管。在本实施例中，第二晶体管的第三电极通过接触孔耦合至第二晶体管的第一电极，该接触孔在半导体层的沟道上方。
在本发明的又一个实施例中，在用于制造图像显示设备的方法中，该图像显示设备包括形成像素电路的像素区域和驱动该像素电路的驱动区域，其中像素电路包括晶体管，用于制造所述晶体管的方法包括：在衬底上形成半导体层，该半导体层具有源极区域、沟道区域和漏极区域；形成带有栅绝缘膜的栅电极，该栅电极和该栅绝缘膜至少部分覆盖沟道区域；在栅电极上形成层间(inter-layer)绝缘膜；在层间绝缘膜上形成源电极和漏电极，并将源电极和漏电极分别耦合至源极区域和漏极区域。本实施例还包括对漏电极进行定位，以在至少部分沟道区域上方覆盖部分层间绝缘膜，并通过层间绝缘膜中的接触孔将漏电极耦合至栅电极。
附图说明
图1A示出了常规的二极管连接的PMOS晶体管；
图1B示出了常规的二极管连接的NMOS晶体管；
图2示出了图1A和1B的二极管连接的晶体管的平面视图；
图3示出了沿图2的二极管连接的晶体管的线A-B的横截面视图；
图4示出了有机EL显示设备的像素电路；
图5示出了根据本发明的示例性实施例的补偿晶体管的平面视图；
图6示出了根据本发明的示例性实施例的补偿晶体管的横截面视图；
图7示出了根据本发明的另一示例性实施例的补偿晶体管的平面视图；和
图8示出了有机EL显示设备的另一像素电路。
具体实施方式
如图4所示，有机EL显示设备的像素电路包括：驱动晶体管M1、补偿晶体管M2、开关晶体管M3和M4、电容器Cst、以及有机EL元件OLED。
驱动晶体管M1控制流向有机EL元件OLED的电流，并且具有耦合至电源VDD的源极和耦合至有机EL元件的漏极。
补偿晶体管M2补偿驱动晶体管M1的阈值电压的偏差，其栅极耦合至驱动晶体管M1的栅极。在本实施例中，补偿晶体管M2是二极管连接的。
开关晶体管M3响应于由扫描线Sn提供的选择信号，从数据线Dm向补偿晶体管M2传输电压；并且开关晶体管M4响应于由前一扫描线Sn-1提供的选择信号，向补偿晶体管M2传输预充电电压Vp。
电容器Cst耦合在驱动晶体管M1的栅极和源极之间，并将驱动晶体管M1的栅极-源极电压维持在恒定电压。
参考图5和6，描述制造根据本发明的示例性实施例的补偿晶体管M2的方法。
图5示出了根据本发明的示例性实施例的补偿晶体管M2的平面视图，图6示出了根据本发明的示例性实施例的补偿晶体管M2的横截面视图。
如图5和6所示，补偿晶体管M2的栅电极100和漏电极320通过在第二绝缘膜700中对准栅电极100形成接触孔720而耦合。钝化层800形成在第二绝缘膜700上方。
具体地说，如图6所示，由诸如多晶硅层制成的半导体层500形成在透明绝缘衬底400上，由SiO2或SiNx制成的第一绝缘膜600形成在半导体层500上。
由Al或Cr制成的栅电极100形成在第一绝缘膜600上，从而栅电极100可以穿过(cross)半导体层500。
除在栅电极100以下的区域外，半导体层500掺入p型搀杂物。掺入搀杂物的区域分别形成源极区域210和漏极区域310，未掺入的区域形成沟道区域510。
源电极220形成在源极区域210上，漏电极320形成在漏极区域310上。
漏电极320与栅电极100接触，从而漏电极320可以覆盖晶体管M2的部分沟道区域510，且漏电极320通过接触孔720耦合至栅电极100。在本实施例中，接触孔720在沟道510上方(即，在其间有或没有介入元件的情况下，在与沟道垂直的方向覆盖、叠置、或对准)。
因此，由二极管连接的晶体管M2占有的区域减小了，有机EL显示设备的孔径比改进了。
如图5所示，源极区域210和漏极区域310的宽度被形成得比源电极220和漏电极320的宽度更宽。或者，如图7所示，源电极220’和漏电极320’的宽度被形成得远远宽于源极区域210和漏极区域310的面积。
图5的补偿晶体管M2示为P沟道晶体管。或者，驱动晶体管M1和补偿晶体管M2可以是N沟道晶体管。在这个替代的实施例(未示出)中，漏电极形成为覆盖部分沟道区域，以及用于耦合漏电极和栅电极的接触孔形成在晶体管的沟道上方。
二极管连接的晶体管被示为在上述的电压编程像素电路实施例中的补偿晶体管。然而，二极管连接的晶体管M3’也可以用于图8所示的电流编程像素电路。图8示出了第一、第二、第三和第四晶体管M1’、M2’、M3’和M4’、有机元件OLED和电容器Cst。由于电流编程像素电路已为本领域技术人员所知，因此不作相应的描述。
另外，上述制造方法可应用于使用了二极管连接的晶体管以及有机EL显示设备的电路。
虽然上面已经详细描述本发明的示例性实施例，但应当很清楚地理解，对于本领域技术人员很明显的此处所述的基本发明概念的多种变化和/或修改，仍在由所附权利要求及其等效内容所限定的本发明的精神与范围之内。

Claims (20)

1.一种用于制造晶体管的方法，包括：
在衬底上形成半导体层；
在所述半导体层上形成第一绝缘膜；
在所述第一绝缘膜上形成栅电极；
在所述半导体层中形成源极区域、沟道区域和漏极区域；
在所述栅电极上形成第二绝缘膜；
在所述第二绝缘膜上形成源电极和漏电极，以通过所述第一和第二绝缘膜进行发射，从而所述源电极和所述漏电极分别耦合至所述源极区域和所述漏极区域；以及
通过所述第二绝缘膜中的接触孔将所述漏电极耦合至所述栅电极，其中所述接触孔形成在所述沟道区域上方。
2.根据权利要求1所述的方法，还包括将所述源极区域、所述漏极区域、或两者的宽度形成为分别宽于所述源电极、所述漏电极、或两者的宽度。
3.根据权利要求1所述的方法，还包括将所述源极区域、所述漏极区域、或两者的宽度形成为分别窄于所述源电极、所述漏电极、或两者的宽度。
4.一种用于制造晶体管的方法，包括：
在衬底上形成半导体层；
在所述半导体层上形成第一绝缘膜；
在所述第一绝缘膜上形成栅电极；
在所述半导体层中形成源极区域、沟道区域和漏极区域；
在所述栅电极上形成第二绝缘膜；
在所述第二绝缘膜上形成源电极和漏电极，以通过所述第一和第二绝缘膜进行发射，从而所述源电极和所述漏电极分别耦合至所述源极区域和所述漏极区域，并且所述漏电极至少覆盖部分所述沟道区域；以及
通过接触孔耦合所述漏电极和所述栅电极。
5.一种图像显示设备，包括：多条数据线，用于传输显示图像信号的数据电流；多条扫描线，用于传输选择信号；以及多个像素电路，形成在多个由所述数据线和所述扫描线限定的像素处，其中所述像素电路包括：
第一晶体管，具有第一电极、第二电极、和在所述第一和第二电极之间的电容器，所述第一晶体管向第三电极输出相应于施加在所述第一和第二电极之间的电压的电流；
显示元件，耦合至所述第一晶体管的所述第三电极，以显示相应于所施加的电流量的图像；
第二晶体管，具有第一电极，耦合至所述第一晶体管的第一电极；第二电极；和第三电极；所述第二晶体管是二极管连接的；以及
开关，用于响应于施加到所述扫描线的选择信号而将施加到所述数据线的电压传输至所述第二晶体管，
其中所述第二晶体管的第三电极通过接触孔耦合至所述第一电极，并且所述接触孔形成在半导体层的沟道上方。
6.根据权利要求5所述的图像显示设备，其中所述像素电路还包括用于响应于所施加的控制信号而将预充电电压传输到所述第二晶体管的第三电极的开关。
7.根据权利要求6所述的图像显示设备，其中在施加所述控制信号之前将选择信号施加到所述像素电路。
8.根据权利要求5所述的图像显示设备，其中所述第二晶体管和所述第一晶体管基本上相似。
9.根据权利要求5所述的图像显示设备，其中所述第一和第二晶体管是P沟道晶体管，所述第一电极是栅极，所述第二电极是源极，所述第三电极是漏极。
10.一种用于制造图像显示设备的方法，该图像显示设备包括用于形成像素电路的像素区域和用于驱动该像素电路的驱动区域，其中所述像素电路包括晶体管，用于制造所述晶体管的方法包括：
在衬底上形成半导体层，该半导体层具有源极区域、沟道区域和漏极区域；
形成带有栅极绝缘膜的栅电极，该栅电极和该栅极绝缘膜至少部分覆盖所述沟道区域；
在所述栅电极上形成层间绝缘膜；
在所述层间绝缘膜上形成源电极和漏电极，并将所述源电极和所述漏电极分别耦合至所述源极区域和所述漏极区域；以及
对所述漏电极进行定位，以在至少部分所述沟道区域上方覆盖部分所述层间绝缘膜，并通过所述层间绝缘膜中的接触孔将所述漏电极耦合至所述栅电极。
11.根据权利要求10所述的方法，还包括将所述源极区域、所述漏极区域、或两者的宽度形成为分别宽于所述源电极、所述漏电极、或两者的宽度。
12.根据权利要求10所述的方法，还包括将所述源极区域、所述漏极区域、或两者的宽度形成为分别窄于所述源电极、所述漏电极、或两者的宽度。
13.一种晶体管，包括：
半导体层，形成在衬底上，具有源极区域、沟道区域和漏极区域；
第一绝缘膜，形成在所述半导体层上；
栅电极，形成在所述半导体层的所述沟道区域上的所述第一绝缘膜上；
第二绝缘膜，形成在所述栅电极上；
源电极和漏电极，形成在所述第二绝缘膜上，以通过所述第一和第二绝缘膜进行发射，从而所述源电极和所述漏电极分别耦合至所述源极区域和所述漏极区域，并且所述漏电极覆盖至少部分所述沟道区域；以及
接触孔，耦合所述漏电极和所述栅电极，该接触孔形成在所述沟道区域上方的所述第二绝缘膜中。
14.根据权利要求13所述的晶体管，所述半导体层是多晶硅层。
15.根据权利要求13所述的晶体管，所述源极区域、所述漏极区域、或两者的宽度分别宽于所述源电极、所述漏电极、或两者的宽度。
16.根据权利要求13所述的晶体管，所述源极区域、所述漏极区域、或两者的宽度分别窄于所述源电极、所述漏电极、或两者的宽度。
17.一种晶体管，包括：
半导体层，形成在衬底上，具有源极区域、沟道区域和漏极区域；
第一绝缘膜，形成在所述半导体层上；
栅电极，形成在所述半导体层的所述沟道区域上的所述第一绝缘膜上；
第二绝缘膜，形成在所述栅电极上；
源电极和漏电极，形成在所述第二绝缘膜上，以通过所述第一和第二绝缘膜进行发射，从而所述源电极和所述漏电极分别耦合至所述源极区域和所述漏极区域，并且所述漏电极和所述源电极之一覆盖至少部分所述沟道区域；以及
接触孔，将覆盖至少所述沟道区域的所述漏电极和所述源电极中的一个与所述栅电极耦合。
18.根据权利要求17所述的晶体管，所述半导体层是多晶硅层。
19.根据权利要求17所述的晶体管，所述源极区域、所述漏极区域、或两者的宽度分别宽于所述源电极、所述漏电极、或两者的宽度。
20.根据权利要求17所述的晶体管，所述源极区域、所述漏极区域、或两者的宽度分别窄于所述源电极、所述漏电极、或两者的宽度。
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