CN1614789A - 一种制备多晶硅绒面的方法 - Google Patents
一种制备多晶硅绒面的方法 Download PDFInfo
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- CN1614789A CN1614789A CNA2004100648311A CN200410064831A CN1614789A CN 1614789 A CN1614789 A CN 1614789A CN A2004100648311 A CNA2004100648311 A CN A2004100648311A CN 200410064831 A CN200410064831 A CN 200410064831A CN 1614789 A CN1614789 A CN 1614789A
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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WO2007107053A1 (fr) * | 2006-03-21 | 2007-09-27 | Wuxi Suntech Power Co., Ltd. | Solution de corrosion acide utilisee dans la preparation de velours a base de polysilicium et procede d'application associe |
CN101805929A (zh) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | 一种多晶硅表面制绒方法 |
CN101872806A (zh) * | 2010-05-14 | 2010-10-27 | 无锡尚德太阳能电力有限公司 | 太阳电池硅片的制绒方法及制造太阳电池的方法 |
CN101350380B (zh) * | 2008-09-01 | 2010-12-08 | 张根发 | 磁场下制备单晶硅太阳能电池绒面的方法 |
CN102002682A (zh) * | 2010-06-23 | 2011-04-06 | 浙江百力达太阳能有限公司 | 硅晶片表面的制绒方法 |
CN102181938A (zh) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | 应用于太阳能电池的单晶硅制绒方法 |
CN102181940A (zh) * | 2011-04-08 | 2011-09-14 | 光为绿色新能源有限公司 | 一种多晶硅绒面的制备方法 |
CN102214726A (zh) * | 2010-04-01 | 2011-10-12 | 浙江索日光电科技有限公司 | 太阳能硅片表面制绒处理方法 |
CN101692357B (zh) * | 2009-10-13 | 2011-12-28 | 华东师范大学 | 一种绒面掺杂氧化锌透明导电薄膜的制备方法 |
CN102330154A (zh) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | 一种用于多晶硅片制绒的酸性制绒液及其使用方法 |
CN102330091A (zh) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | 一种多晶硅片酸性制绒液的添加剂及使用方法 |
CN103014875A (zh) * | 2012-11-30 | 2013-04-03 | 甘肃虹光电子有限责任公司 | 一种人造蓝宝石薄片的处理方法 |
CN103361738A (zh) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | 一种多晶硅太阳电池及太阳电池多晶硅片制绒方法 |
CN103394484A (zh) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | 多晶硅太阳能电池硅片酸制绒后的清洗工艺 |
CN103806107A (zh) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒方法及制绒液 |
CN103882528A (zh) * | 2014-03-28 | 2014-06-25 | 苏州阿特斯阳光电力科技有限公司 | 一种多晶硅片绒面的制备方法 |
CN104032376A (zh) * | 2014-06-04 | 2014-09-10 | 浙江尖山光电股份有限公司 | 一种太阳电池硅片的制绒方法及太阳电池和电池组件 |
CN105679862A (zh) * | 2010-12-21 | 2016-06-15 | 西奥尼克斯公司 | 具有减少的衬底损伤的半导体器件和相关方法 |
US10229951B2 (en) | 2010-04-21 | 2019-03-12 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
US10269861B2 (en) | 2011-06-09 | 2019-04-23 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US10347682B2 (en) | 2013-06-29 | 2019-07-09 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US10361232B2 (en) | 2009-09-17 | 2019-07-23 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US10505054B2 (en) | 2010-06-18 | 2019-12-10 | Sionyx, Llc | High speed photosensitive devices and associated methods |
CN111303883A (zh) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | 一种腐蚀液及芯片台面的制备方法 |
Family Cites Families (3)
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DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
KR100378016B1 (ko) * | 2001-01-03 | 2003-03-29 | 삼성에스디아이 주식회사 | 태양 전지용 반도체 기판의 텍스처링 방법 |
JP2002252202A (ja) * | 2001-02-27 | 2002-09-06 | Takashi Matsuura | 半導体基材表面への微細構造形成方法およびその方法により微細構造を形成した半導体基材ならびにそれを用いたデバイス |
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2004
- 2004-09-30 CN CNB2004100648311A patent/CN100344001C/zh active Active
Cited By (39)
Publication number | Priority date | Publication date | Assignee | Title |
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US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US10741399B2 (en) | 2004-09-24 | 2020-08-11 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
WO2007107053A1 (fr) * | 2006-03-21 | 2007-09-27 | Wuxi Suntech Power Co., Ltd. | Solution de corrosion acide utilisee dans la preparation de velours a base de polysilicium et procede d'application associe |
US8298438B2 (en) | 2006-03-21 | 2012-10-30 | Wuxi Suntech Power Co., Ltd. | Acid corrosion solution for preparing polysilicon suede and the applied method of it |
AU2006340678B2 (en) * | 2006-03-21 | 2010-12-16 | Wuxi Suntech Power Co., Ltd. | An acid corrosion solution for preparing polysilicon suede and the applied method of it |
KR101028000B1 (ko) | 2006-03-21 | 2011-04-13 | 우시 썬테크 파워 컴퍼니 리미티드 | 폴리실리콘 스웨이드 제조용 산성 부식 용액 및 그의 적용 방법 |
CN101350380B (zh) * | 2008-09-01 | 2010-12-08 | 张根发 | 磁场下制备单晶硅太阳能电池绒面的方法 |
US10361232B2 (en) | 2009-09-17 | 2019-07-23 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
CN101692357B (zh) * | 2009-10-13 | 2011-12-28 | 华东师范大学 | 一种绒面掺杂氧化锌透明导电薄膜的制备方法 |
CN102214726A (zh) * | 2010-04-01 | 2011-10-12 | 浙江索日光电科技有限公司 | 太阳能硅片表面制绒处理方法 |
CN102214726B (zh) * | 2010-04-01 | 2013-03-06 | 索日新能源股份有限公司 | 太阳能硅片表面制绒处理方法 |
CN101805929A (zh) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | 一种多晶硅表面制绒方法 |
CN101805929B (zh) * | 2010-04-02 | 2012-12-19 | 日强光伏科技有限公司 | 一种多晶硅表面制绒方法 |
US10229951B2 (en) | 2010-04-21 | 2019-03-12 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
CN101872806A (zh) * | 2010-05-14 | 2010-10-27 | 无锡尚德太阳能电力有限公司 | 太阳电池硅片的制绒方法及制造太阳电池的方法 |
US10505054B2 (en) | 2010-06-18 | 2019-12-10 | Sionyx, Llc | High speed photosensitive devices and associated methods |
CN102002682A (zh) * | 2010-06-23 | 2011-04-06 | 浙江百力达太阳能有限公司 | 硅晶片表面的制绒方法 |
CN102181938A (zh) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | 应用于太阳能电池的单晶硅制绒方法 |
CN105679862A (zh) * | 2010-12-21 | 2016-06-15 | 西奥尼克斯公司 | 具有减少的衬底损伤的半导体器件和相关方法 |
CN102181940A (zh) * | 2011-04-08 | 2011-09-14 | 光为绿色新能源有限公司 | 一种多晶硅绒面的制备方法 |
US10269861B2 (en) | 2011-06-09 | 2019-04-23 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
CN102330154A (zh) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | 一种用于多晶硅片制绒的酸性制绒液及其使用方法 |
CN102330091B (zh) * | 2011-07-27 | 2012-07-04 | 常州时创能源科技有限公司 | 一种多晶硅片酸性制绒液的添加剂及使用方法 |
CN102330091A (zh) * | 2011-07-27 | 2012-01-25 | 常州时创能源科技有限公司 | 一种多晶硅片酸性制绒液的添加剂及使用方法 |
CN102330154B (zh) * | 2011-07-27 | 2012-08-01 | 常州时创能源科技有限公司 | 一种用于多晶硅片制绒的酸性制绒液及其使用方法 |
CN103361738A (zh) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | 一种多晶硅太阳电池及太阳电池多晶硅片制绒方法 |
CN103806107A (zh) * | 2012-11-02 | 2014-05-21 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒方法及制绒液 |
CN103014875A (zh) * | 2012-11-30 | 2013-04-03 | 甘肃虹光电子有限责任公司 | 一种人造蓝宝石薄片的处理方法 |
CN103014875B (zh) * | 2012-11-30 | 2015-10-21 | 甘肃虹光电子有限责任公司 | 一种人造蓝宝石薄片的处理方法 |
US10347682B2 (en) | 2013-06-29 | 2019-07-09 | Sionyx, Llc | Shallow trench textured regions and associated methods |
US11069737B2 (en) | 2013-06-29 | 2021-07-20 | Sionyx, Llc | Shallow trench textured regions and associated methods |
CN103394484A (zh) * | 2013-08-02 | 2013-11-20 | 常州时创能源科技有限公司 | 多晶硅太阳能电池硅片酸制绒后的清洗工艺 |
CN103394484B (zh) * | 2013-08-02 | 2016-08-10 | 常州时创能源科技有限公司 | 多晶硅太阳能电池硅片酸制绒后的清洗工艺 |
CN103882528A (zh) * | 2014-03-28 | 2014-06-25 | 苏州阿特斯阳光电力科技有限公司 | 一种多晶硅片绒面的制备方法 |
CN104032376A (zh) * | 2014-06-04 | 2014-09-10 | 浙江尖山光电股份有限公司 | 一种太阳电池硅片的制绒方法及太阳电池和电池组件 |
CN111303883A (zh) * | 2019-10-28 | 2020-06-19 | 芯思杰技术(深圳)股份有限公司 | 一种腐蚀液及芯片台面的制备方法 |
CN111303883B (zh) * | 2019-10-28 | 2021-12-14 | 芯思杰技术(深圳)股份有限公司 | 一种腐蚀液及芯片台面的制备方法 |
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Assignee: Kuttler Automation Systems (Suzhou) Co., Ltd. Assignor: Wuxi Shangde Solar Electric Power Co., Ltd. Contract fulfillment period: 2009.3.27 to 2014.3.27 contract change Contract record no.: 2009320000666 Denomination of invention: Method for preparing polycrystalline silicon suede Granted publication date: 20071017 License type: Exclusive license Record date: 2009.4.22 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.3.27 TO 2014.3.27; CHANGE OF CONTRACT Name of requester: CUTLER AUTOMATION SYSTEM ( SUZHOU) CO., LTD. Effective date: 20090422 |