CN1604351A - 发光元件的制造方法 - Google Patents

发光元件的制造方法 Download PDF

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Publication number
CN1604351A
CN1604351A CN 200410083438 CN200410083438A CN1604351A CN 1604351 A CN1604351 A CN 1604351A CN 200410083438 CN200410083438 CN 200410083438 CN 200410083438 A CN200410083438 A CN 200410083438A CN 1604351 A CN1604351 A CN 1604351A
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CN
China
Prior art keywords
aforementioned
compound semiconductor
light
semiconductor layer
macromolecular material
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Pending
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CN 200410083438
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English (en)
Chinese (zh)
Inventor
萩本和德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN1604351A publication Critical patent/CN1604351A/zh
Pending legal-status Critical Current

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CN 200410083438 2003-09-30 2004-09-29 发光元件的制造方法 Pending CN1604351A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003341761A JP2005109208A (ja) 2003-09-30 2003-09-30 発光素子の製造方法
JP2003341761 2003-09-30

Publications (1)

Publication Number Publication Date
CN1604351A true CN1604351A (zh) 2005-04-06

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CN 200410083438 Pending CN1604351A (zh) 2003-09-30 2004-09-29 发光元件的制造方法

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JP (1) JP2005109208A (ja)
CN (1) CN1604351A (ja)
TW (1) TW200512956A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101039014B (zh) * 2006-03-15 2012-06-06 松下电器产业株式会社 光半导体装置
CN109216234A (zh) * 2017-06-29 2019-01-15 英飞凌科技股份有限公司 用于处理半导体衬底的设备和方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4655209B2 (ja) * 2005-07-04 2011-03-23 日立電線株式会社 貼り合せ体の製造方法、及び半導体装置の製造方法、並びに半導体装置
JP5288852B2 (ja) 2008-03-21 2013-09-11 スタンレー電気株式会社 半導体素子の製造方法
US20110127567A1 (en) 2008-06-02 2011-06-02 Korea University Industrial & Academic Collaboration Foundation Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
KR101068866B1 (ko) * 2009-05-29 2011-09-30 삼성엘이디 주식회사 파장변환시트 및 이를 이용한 발광장치
JP5982179B2 (ja) 2012-05-28 2016-08-31 株式会社東芝 半導体発光装置およびその製造方法
JP2016060675A (ja) * 2014-09-19 2016-04-25 日本碍子株式会社 １３族元素窒化物層の分離方法
TWI552376B (zh) * 2015-01-08 2016-10-01 光鋐科技股份有限公司 發光二極體結構及其製造方法
JP6718932B2 (ja) * 2018-09-10 2020-07-08 日本碍子株式会社 １３族元素窒化物層の分離方法
US20240030055A1 (en) 2021-02-04 2024-01-25 Mitsubishi Electric Corporation Method of manufacturing semiconductor substrate and method of manufacturing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101039014B (zh) * 2006-03-15 2012-06-06 松下电器产业株式会社 光半导体装置
CN109216234A (zh) * 2017-06-29 2019-01-15 英飞凌科技股份有限公司 用于处理半导体衬底的设备和方法

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Publication number Publication date
TW200512956A (en) 2005-04-01
JP2005109208A (ja) 2005-04-21

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