TW200512956A - Manufacturing method of light-emitting device - Google Patents
Manufacturing method of light-emitting deviceInfo
- Publication number
- TW200512956A TW200512956A TW093124525A TW93124525A TW200512956A TW 200512956 A TW200512956 A TW 200512956A TW 093124525 A TW093124525 A TW 093124525A TW 93124525 A TW93124525 A TW 93124525A TW 200512956 A TW200512956 A TW 200512956A
- Authority
- TW
- Taiwan
- Prior art keywords
- pressure member
- layer
- laminate
- pressure
- laminate body
- Prior art date
Links
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a manufacturing method for light-emitting device, which can ensure firm bonding of the composite semiconductor layer containing the light-emitting layer, which is extremely thin and warped, with the device substrate without generating cracks and notches. The method includes the following steps: overlapping the compoundsemiconductor layer 50 with the device substrate 7 to produce the laminate layer 130; configuring the pressure buffer layer 150, 111 composed of thermoplastic polymer material on at least one of two parties between the first pressure member 51 and the second pressure member 52 containing metal body 51a, 52a, respectively, or between the metal body 51a of the first pressure member 51 and the first main surface of the laminate body 130, or between the metal body 52a of the second pressure member 52 and the second main surface of the laminate body 130. With this status for configuring the laminate body 130, it can soften the bonding temperature of the pressure buffer layer 150, 111 to heat the laminate body 130, and conducting the bonding of the compound semiconductor layer 50 and the device substrate 7 by pressuring the laminate body 130 through the softened pressure buffer layers 150, 111 between the first pressure member 51 and the second pressure member 52.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003341761A JP2005109208A (en) | 2003-09-30 | 2003-09-30 | Method of manufacturing light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200512956A true TW200512956A (en) | 2005-04-01 |
Family
ID=34536262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093124525A TW200512956A (en) | 2003-09-30 | 2004-08-16 | Manufacturing method of light-emitting device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2005109208A (en) |
CN (1) | CN1604351A (en) |
TW (1) | TW200512956A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552376B (en) * | 2015-01-08 | 2016-10-01 | 光鋐科技股份有限公司 | Light emitting diode structure and manufacturing method thereof |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4655209B2 (en) * | 2005-07-04 | 2011-03-23 | 日立電線株式会社 | Method for manufacturing bonded body, method for manufacturing semiconductor device, and semiconductor device |
JP2007250739A (en) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | Optical semiconductor device |
JP5288852B2 (en) * | 2008-03-21 | 2013-09-11 | スタンレー電気株式会社 | Manufacturing method of semiconductor device |
EP2302705B1 (en) * | 2008-06-02 | 2018-03-14 | LG Innotek Co., Ltd. | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
KR101068866B1 (en) * | 2009-05-29 | 2011-09-30 | 삼성엘이디 주식회사 | wavelength conversion sheet and light emitting device using the same |
JP5982179B2 (en) | 2012-05-28 | 2016-08-31 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JP2016060675A (en) * | 2014-09-19 | 2016-04-25 | 日本碍子株式会社 | Method for separating group 13 element nitride layer |
EP3422394B1 (en) * | 2017-06-29 | 2021-09-01 | Infineon Technologies AG | Method for processing a semiconductor substrate |
JP6718932B2 (en) * | 2018-09-10 | 2020-07-08 | 日本碍子株式会社 | Method for separating group 13 element nitride layer |
KR20230116016A (en) | 2021-02-04 | 2023-08-03 | 미쓰비시덴키 가부시키가이샤 | Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device |
-
2003
- 2003-09-30 JP JP2003341761A patent/JP2005109208A/en active Pending
-
2004
- 2004-08-16 TW TW093124525A patent/TW200512956A/en unknown
- 2004-09-29 CN CN 200410083438 patent/CN1604351A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI552376B (en) * | 2015-01-08 | 2016-10-01 | 光鋐科技股份有限公司 | Light emitting diode structure and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2005109208A (en) | 2005-04-21 |
CN1604351A (en) | 2005-04-06 |
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