TW200512956A - Manufacturing method of light-emitting device - Google Patents

Manufacturing method of light-emitting device

Info

Publication number
TW200512956A
TW200512956A TW093124525A TW93124525A TW200512956A TW 200512956 A TW200512956 A TW 200512956A TW 093124525 A TW093124525 A TW 093124525A TW 93124525 A TW93124525 A TW 93124525A TW 200512956 A TW200512956 A TW 200512956A
Authority
TW
Taiwan
Prior art keywords
pressure member
layer
laminate
pressure
laminate body
Prior art date
Application number
TW093124525A
Other languages
Chinese (zh)
Inventor
Hagimoto Katoku
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200512956A publication Critical patent/TW200512956A/en

Links

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The present invention provides a manufacturing method for light-emitting device, which can ensure firm bonding of the composite semiconductor layer containing the light-emitting layer, which is extremely thin and warped, with the device substrate without generating cracks and notches. The method includes the following steps: overlapping the compoundsemiconductor layer 50 with the device substrate 7 to produce the laminate layer 130; configuring the pressure buffer layer 150, 111 composed of thermoplastic polymer material on at least one of two parties between the first pressure member 51 and the second pressure member 52 containing metal body 51a, 52a, respectively, or between the metal body 51a of the first pressure member 51 and the first main surface of the laminate body 130, or between the metal body 52a of the second pressure member 52 and the second main surface of the laminate body 130. With this status for configuring the laminate body 130, it can soften the bonding temperature of the pressure buffer layer 150, 111 to heat the laminate body 130, and conducting the bonding of the compound semiconductor layer 50 and the device substrate 7 by pressuring the laminate body 130 through the softened pressure buffer layers 150, 111 between the first pressure member 51 and the second pressure member 52.
TW093124525A 2003-09-30 2004-08-16 Manufacturing method of light-emitting device TW200512956A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003341761A JP2005109208A (en) 2003-09-30 2003-09-30 Method of manufacturing light emitting element

Publications (1)

Publication Number Publication Date
TW200512956A true TW200512956A (en) 2005-04-01

Family

ID=34536262

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124525A TW200512956A (en) 2003-09-30 2004-08-16 Manufacturing method of light-emitting device

Country Status (3)

Country Link
JP (1) JP2005109208A (en)
CN (1) CN1604351A (en)
TW (1) TW200512956A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552376B (en) * 2015-01-08 2016-10-01 光鋐科技股份有限公司 Light emitting diode structure and manufacturing method thereof

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4655209B2 (en) * 2005-07-04 2011-03-23 日立電線株式会社 Method for manufacturing bonded body, method for manufacturing semiconductor device, and semiconductor device
JP2007250739A (en) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd Optical semiconductor device
JP5288852B2 (en) * 2008-03-21 2013-09-11 スタンレー電気株式会社 Manufacturing method of semiconductor device
EP2302705B1 (en) * 2008-06-02 2018-03-14 LG Innotek Co., Ltd. Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
KR101068866B1 (en) * 2009-05-29 2011-09-30 삼성엘이디 주식회사 wavelength conversion sheet and light emitting device using the same
JP5982179B2 (en) 2012-05-28 2016-08-31 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP2016060675A (en) * 2014-09-19 2016-04-25 日本碍子株式会社 Method for separating group 13 element nitride layer
EP3422394B1 (en) * 2017-06-29 2021-09-01 Infineon Technologies AG Method for processing a semiconductor substrate
JP6718932B2 (en) * 2018-09-10 2020-07-08 日本碍子株式会社 Method for separating group 13 element nitride layer
KR20230116016A (en) 2021-02-04 2023-08-03 미쓰비시덴키 가부시키가이샤 Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI552376B (en) * 2015-01-08 2016-10-01 光鋐科技股份有限公司 Light emitting diode structure and manufacturing method thereof

Also Published As

Publication number Publication date
JP2005109208A (en) 2005-04-21
CN1604351A (en) 2005-04-06

Similar Documents

Publication Publication Date Title
TW200737403A (en) A method of fabricating a composite substrate with improved electrical properties
TW200727446A (en) Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method
TW200729356A (en) A method of fabricating a composite substrate
TW200512956A (en) Manufacturing method of light-emitting device
JP2005503947A5 (en)
JP2004536722A5 (en)
SG142140A1 (en) Display device and method of manufacturing thereof
TW200720090A (en) Laminated film having gas barrier characteristics
TW200708395A (en) Laminated body and process for producing the same
WO2005037558A3 (en) Print head with thin membrane
WO2004107467A3 (en) Method for producing organic light-emitting diodes (oled's)
WO2006060583A3 (en) Method of manufacturing an upper for an article of footwear
CN108021284B (en) Integrated flexible touch screen and preparation method thereof, OLED display
WO2008108178A1 (en) Microchip manufacturing method
DE602006020921D1 (en) HAFTARTIKEL, VERBUNDARTIKEL AND MANUFACTURING METHOD THEREFOR
WO2009022578A1 (en) Device structure and method for manufacturing the same
TW200725712A (en) Wafer bonding method
TW200802934A (en) Light emitting diode and method manufacturing the same
TW200625695A (en) Manufacturing method for semiconductor light emitting device
WO2006132382A3 (en) Method of manufacturing a film
TW200741910A (en) Method of bonding part, method of stacking part, and structure including part bonded
EP1786034A3 (en) Power semiconductor module
JP2008097829A5 (en)
DE602005019279D1 (en) CONNECTING SILICON CARBIDE
SE0301102D0 (en) Method in connection with the production of an apckaging laminate thus produced and a packaging container manufactures from the packaging laminate