CN1588134A - High-density rectangular deep-etched quartz transmission grating - Google Patents
High-density rectangular deep-etched quartz transmission grating Download PDFInfo
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- CN1588134A CN1588134A CN 200410052908 CN200410052908A CN1588134A CN 1588134 A CN1588134 A CN 1588134A CN 200410052908 CN200410052908 CN 200410052908 CN 200410052908 A CN200410052908 A CN 200410052908A CN 1588134 A CN1588134 A CN 1588134A
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 30
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- 239000010453 quartz Substances 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 16
- 230000010287 polarization Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 5
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- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
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Abstract
A high-density rectangular deep-etched quartz transmission grating for transmitting 800 nm waveband semiconductor laser or femtosecond pulse laser with 800 nm as the central wavelength at high diffraction efficiency is characterized in that the linear density of the grating is 1220-1270 lines/mm, the depth of the grating is 1.49-1.55 microns, and the duty ratio of the grating is 1/2. The invention can realize the result that the + 1-level Bragg transmission diffraction efficiency in the TE and TM polarization directions is higher than 90 percent, and the rectangular etched quartz transmission grating is processed by combining an optical holographic recording technology or an electron beam direct writing device with a microelectronic photoetching process and can be produced in large batch at low cost.
Description
Technical field
This patent relates to quartz transmission grating, particularly a kind ofly is used for the semiconductor laser of 800 nano wavebands or is the deep etching quartz transmission grating of high density rectangle of transmission device of high-diffraction efficiency of the femtosecond pulse of centre wavelength with 800 nanometers.
Background technology
Semiconductor laser is because little, the in light weight and energy conversion efficiency advantages of higher of volume has obtained using widely, and wherein the semiconductor laser of 800 nano wavebands is the most frequently used laser instruments.Therefore, at the high-level efficiency grating device of 800 nano wavebands, have important use and be worth.In addition, diffraction grating also has a lot of important application as dispersion element for femto-second laser pulse, and as the shaping pulse in the space-time transformation technology, paired pulses compresses with broadening etc. in the optical parameter chirped pulse amplification (OPCA).At present femtosecond laser is mainly produced by ti sapphire laser, and therefore centre wavelength be that the high efficiency diffraction grating device at center has important use and is worth at femtosecond laser with 800 nanometers about 800 nanometers.
High density chromatic dispersion grating requires to have can be near 100% diffraction efficiency and high as far as possible damage threshold.Metal grating utilizes metal to have higher reflectivity and is widely adopted, and its diffraction efficiency reaches more than 90%.But because there is absorption loss in metal, the diffraction efficiency of metal grating can not infinitely improve, and the luminous energy that absorbs is converted into heat energy, makes damage threshold reduce.Utilize the absorption of the grating pair light that dielectric substance makes very little, have higher damage threshold, and by the optimized choice to the grating degree of depth and cycle, the diffraction efficiency of dielectric grating can reach more than 90% also.After the surface relief grating of light engraving erosion plates the dielectric reflective coating higher diffraction efficiency can be arranged, but the design of reflective coating and making are quite complicated.Along with the continuous innovation of microelectric technique, rely on the advanced deep etching technique of microelectronics, the quartzy grating diffration efficient of transmission-type can reach more than 90%.
The deep etching quartz grating of rectangle is to utilize the deep etching technique of microelectronics, and what process on quartz substrate has a grating than deep trouth shape.Because the etching depth of surface etch grating is darker, so diffraction property is similar to body grating, has high efficiency body grating Bragg diffraction effect, this point is different fully with the plane grating that common surperficial light engraving loses.The high density rectangle loses the grating diffration theory deeply, can not be explained by simple scalar optical grating diffraction equation, and must adopt the Maxwell equation of vector form and in conjunction with boundary condition, accurately calculate the result by calculation of coding machine program.People such as Moharam have provided the algorithm of rigorous coupled wave theory, referring to technology 1:M.G.Moharam et al. formerly, J.Opt.Soc.Am.A.12, and 1077 (1995), can solve this class and lose the grating diffration problem deeply.But as far as we know, also nobody provides the semiconductor laser of 800 nano wavebands or is that the femtosecond pulse of centre wavelength provides the deep etching quartz transmission grating of high density rectangle with 800 nanometers.
Summary of the invention
The technical problem to be solved in the present invention is to be that the femtosecond pulse of centre wavelength provides a kind of high-diffraction efficiency quartz transmission grating to the semiconductor laser of 800 nano wavebands or with 800 nanometers, this grating can realize that one-level Prague transmission diffraction efficient is greater than 90% under the situation that TE or TM polarization mode are freely selected.Because high dencity grating polarization often is relevant, practicability is then wished polarization irrelevant, therefore can realize the high efficiency transmission effects under the situation that polarization mode freely selects, also is in demand in actual use.
Technical solution of the present invention is as follows:
A kind ofly be used for the semiconductor laser of transmission 800 nano wavebands or be the deep etching quartz transmission grating of high density rectangle of the femtosecond pulse of centre wavelength with 800 nanometers, the line density that it is characterized in that this grating is 1220～1270 lines per millimeters, the degree of depth of grating is 1.49～1.55 microns, and the dutycycle of grating is 1/2.The line density of described grating is 1220 lines per millimeters, and the degree of depth of grating is 1.52 microns a surface relief structure.
Description of drawings
Fig. 1 is the geometry of the deep etching quartz transmission grating of high density rectangle of the present invention.
Fig. 2 is 1.52 microns of the deep etching quartz transmission grating of high density rectangle of the present invention (refractive index of fused quartz gets 1.45332) grid stroke density 1220 lines per millimeters, the grating degree of depth, dutycycle is 1/2, when in the wave band (700 nanometers～900 nanometers) that with 800 nanometers is the center, using, TE/TM pattern next stage Prague transmission diffraction efficient (%).
Fig. 3 is the recording beam path of holographic grating.
Embodiment
Foundation of the present invention is as follows:
Fig. 1 has shown the geometry of rectangular raster.Quartzy grating index is 1.45332.D represents the surface relief degree of depth of grating; ∧ represents the space periodic of grating, is the inverse of grating space density l, i.e. ∧=1/l; Grating vector K is positioned at plane of incidence.The TM polarized incident light corresponding to the direction of vibration of magnetic vector perpendicular to the plane of incidence, the TE polarized incident light corresponding to the direction of vibration of electric field intensity perpendicular to the plane of incidence.
Under optical grating construction as shown in Figure 1, the present invention adopt formerly technology 1 rigorous coupled wave Theoretical Calculation quartzy grating (dutycycle is 1/2) in wavelength X
0Be under the 800 nanometer continuous light incidents, raster density, the degree of depth under TE, TM polarization situation+(corresponding incident angle θ satisfies θ for 1 grade of Prague transmission diffraction efficient
b=sin
-1(λ
0/ (2* ∧))), we obtain as drawing a conclusion:
The high density diffraction grating has very strong polarization correlated.By to the grating degree of depth, raster shape and the optimal design in grating cycle, can realize that grating one-level (as+1 grade) glitters, promptly maximum value (more than 90%) appears in diffraction efficiency,
Consider the limitation of preparing grating technology, darker high dencity grating generally is difficult to etching, so the present invention only studies the degree of depth less than 2 microns high dencity grating.The present invention obtains the numerical optimization result of high-diffraction efficiency rectangular raster according to Theoretical Calculation; promptly when raster density between 1220 lines per millimeters～1270 lines per millimeters, the grating degree of depth is between 1.49 microns～1.55 microns the time; no matter the TE mould still is the TM mould; one-level Prague transmission diffraction efficient of grating can reach more than 90% under 800 nano wave lengths; realized freely the selecting of polarization mode seen Table 1.Particularly working as raster density is 1220 lines per millimeters, and when the grating degree of depth was 1.52 microns, the efficient of TE and TM polarization mode was all greater than 94%.
The present invention has studied one-level Prague transmission diffraction efficient of this in the wave band that with 800 nanometers is the center (700 nanometers～900 nanometers) corresponding TE/TM pattern of optimizing structure, λ simultaneously
0=800 nanometers, incident angle θ
b=sin
-1(λ
0/ (2* ∧)) result, as shown in Figure 2.
Utilize the micro-optic technology to make the high density rectangular raster, at first adopt the holographic recording mode to write down grating and see Fig. 3: utilize He-Cd laser instrument (wavelength is 0.441 μ m) to send two bundle plane waves and on substrate, form interference field with 2 θ angles.We adopt the glass sheet that is coated with MICROPOSIT series 1818 photoresists as the record substrate, ∧ represents the space periodic of grating, i.e. the spacing of adjacent stripes, and its size is ∧=λ/(2*sin θ), wherein λ is the recording light wavelength, adopts 0.441 μ m in experiment.Angle θ is big more for record, and then ∧ is more little, so by changing the size of θ, can control the cycle of grating, periodic quantity can be by above-mentioned efficiency diagram design, record high dencity grating.Then, the pattern on the photoresist by the microelectronics lithographic technique, is comprised that wet-chemical or reactive ion dry etching transfer on the quartz substrate high dencity grating that is lost deeply behind the flush away photoresist.
Table 1 has provided a series of embodiment of the present invention, in order to obtain the quartzy grating of rectangle that high-diffraction efficiency, polarization mode are freely selected, in the process of making grating, suitably the selective light moire grids density and the grating degree of depth just can obtain the rectangle quartz grating that high-diffraction efficiency, polarization mode are freely selected.
As shown in Table 1, the line density of this grating is 1220～1270 lines per millimeters, the degree of depth of grating is 1.49～1.52 microns, the dutycycle of grating is 1/2, one-level Prague transmission diffraction efficiency eta of grating under TE and TM pattern all greater than 90%, when the degree of depth of grating is 1.52 microns, when the line density of grating is 1220 lines per millimeters, one-level Prague transmission diffraction efficiency eta of grating under TE and TM pattern all greater than 94%.No matter one-level Prague transmission diffraction efficient of this grating still be the TM mould for the TE mould like this, can both guarantee more than 94%, makes polarization mode freely to select.
The deep etching quartz transmission grating of high density rectangle of the present invention is that the femtosecond pulse of centre wavelength has very high transmission diffraction efficient to the semiconductor laser of 800 nano wavebands with 800 nanometers, make full use of the holographic grating recording technique, microelectronics photoetching technique and high-density plasma dry method deep etching technology, can be in enormous quantities, produce at low cost, grating stable performance after the etching, reliably, be a kind of important realization technology of the high-diffraction efficiency transmission grating used at the semiconductor laser that with 800 nanometers is the femtosecond pulse of centre wavelength or 800 nano wavebands.
1 grade of Prague of table 1 transmission diffraction efficiency eta (%)
[d is the grating degree of depth (micron), and l is grid stroke density (lines per millimeter)]
Claims (2)
1, a kind ofly is used for transmission 800 nano waveband semiconductor lasers or is the deep etching quartz transmission grating of high density rectangle of the femtosecond pulse of centre wavelength with 800 nanometers, the line density that it is characterized in that this grating is 1220～1270 lines per millimeters, the degree of depth of grating is 1.49～1.55 microns, and the dutycycle of grating is 1/2.
2, the deep etching quartz transmission grating of high density rectangle according to claim 1, the line density that it is characterized in that described grating is 1220 lines per millimeters, the degree of depth of grating is 1.52 microns.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322339C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | High diffraction efficiency quartz transmission grating with 532 nm wavelength |
| CN1322340C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | High diffraction efficiency quartz transmission grating with 1053 nanometer wavelength |
| CN1322341C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | 632.8 nm wavelength high diffraction efficiency quartz transmission grating |
| CN100340877C (en) * | 2006-03-22 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | 632.8 nm wavelength back incidence type quartz reflection polarization beam splitting grating |
| CN100340875C (en) * | 2006-03-08 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | Quartz transmission polarization beam splitting grating with 800 nanometer wave band |
| CN100340876C (en) * | 2006-03-22 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | 532 nm wavelength high-density deep-etched quartz transmission polarization beam-splitting grating |
| CN101187770B (en) * | 2007-11-14 | 2010-05-19 | 中国科学院上海光学精密机械研究所 | Femtosecond pulse compression device |
| CN103901515A (en) * | 2012-12-25 | 2014-07-02 | 重庆文理学院 | Rectangular quartz double-polarization blazed grating with 532 nanometer wave band |
| CN103984114A (en) * | 2014-05-30 | 2014-08-13 | 中国科学院上海光学精密机械研究所 | Small-size double-density grating pair femtosecond pulse compression device |
| CN113009705A (en) * | 2019-12-19 | 2021-06-22 | 苏州苏大维格科技集团股份有限公司 | Structured light assembly for eliminating zero-order diffraction influence |
| CN118554259A (en) * | 2024-07-26 | 2024-08-27 | 山东省科学院激光研究所 | Surface emitting laser based on femtosecond laser and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101609176B (en) * | 2009-07-08 | 2010-10-20 | 中国科学院上海光学精密机械研究所 | Metal embedded fused quartz broadband reflection grating |
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2004
- 2004-07-16 CN CN 200410052908 patent/CN1243257C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322339C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | High diffraction efficiency quartz transmission grating with 532 nm wavelength |
| CN1322340C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | High diffraction efficiency quartz transmission grating with 1053 nanometer wavelength |
| CN1322341C (en) * | 2005-06-08 | 2007-06-20 | 中国科学院上海光学精密机械研究所 | 632.8 nm wavelength high diffraction efficiency quartz transmission grating |
| CN100340875C (en) * | 2006-03-08 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | Quartz transmission polarization beam splitting grating with 800 nanometer wave band |
| CN100340877C (en) * | 2006-03-22 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | 632.8 nm wavelength back incidence type quartz reflection polarization beam splitting grating |
| CN100340876C (en) * | 2006-03-22 | 2007-10-03 | 中国科学院上海光学精密机械研究所 | 532 nm wavelength high-density deep-etched quartz transmission polarization beam-splitting grating |
| CN101187770B (en) * | 2007-11-14 | 2010-05-19 | 中国科学院上海光学精密机械研究所 | Femtosecond pulse compression device |
| CN103901515A (en) * | 2012-12-25 | 2014-07-02 | 重庆文理学院 | Rectangular quartz double-polarization blazed grating with 532 nanometer wave band |
| CN103984114A (en) * | 2014-05-30 | 2014-08-13 | 中国科学院上海光学精密机械研究所 | Small-size double-density grating pair femtosecond pulse compression device |
| CN113009705A (en) * | 2019-12-19 | 2021-06-22 | 苏州苏大维格科技集团股份有限公司 | Structured light assembly for eliminating zero-order diffraction influence |
| CN118554259A (en) * | 2024-07-26 | 2024-08-27 | 山东省科学院激光研究所 | Surface emitting laser based on femtosecond laser and preparation method thereof |
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| CN1243257C (en) | 2006-02-22 |
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