CN204422813U - A kind of transmission-type silicon nano-array beam splitter - Google Patents
A kind of transmission-type silicon nano-array beam splitter Download PDFInfo
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- CN204422813U CN204422813U CN201520096254.8U CN201520096254U CN204422813U CN 204422813 U CN204422813 U CN 204422813U CN 201520096254 U CN201520096254 U CN 201520096254U CN 204422813 U CN204422813 U CN 204422813U
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Abstract
The utility model discloses a kind of transmission-type silicon nano-array beam splitter, belong to micronano optical field.A kind of transmission-type silicon nano-array beam splitter, the silicon nanorod array of several period profile comprising crystalline silicon substrate and etch in crystalline silicon substrate; The silicon nanorod array of described each period profile comprises that several are equally distributed towards different rectangular parallelepiped silicon nanorods.Its advantage is: total silicon nanometer rods beam splitter only needs rotation direction on workplace can realize the Spatial transmission of (0-360) ° scope, can be equivalent to arbitrary face type Spatial transmission device, and only needs the processing step of traditional two step embossment DOE; And nanometer rods beam splitter far exceedes traditional DOE to the tolerance of mismachining tolerance; Total silicon device not only reduces one coating process, and further increasing stability and the reliability of device.
Description
Technical field
The utility model relates to a kind of transmission-type silicon nano-array beam splitter, belongs to micronano optical field.
Background technology
Beam splitter (beam splitter) is a kind of common optical passive component, the laser of incidence is can be used for be divided into the M × N of equal strength or certain strength allocation proportion to restraint (M, N is respectively the horizontal and vertical light beam number of beam splitter outgoing beam, M, N is integer, evenly can arrange, also can arrange arbitrarily), be widely used in the fields such as optical fiber communication, Laser Processing, laser beautifying, gesture identification sensing, line holographic projections.Beam splitter can realize with the diffraction optical element (Diffractive OpticalElement, DOE) in micro-optic technology.The different pixels of DOE have different step depth, can realize the precision control to exporting light position phase, and then realize effective light splitting by face type optimal design.But the diffraction efficiency of DOE and homogeneity are subject to the impact of the number of steps that diffractive optical element manufactures.In general, number of steps is more, diffraction efficiency and uniformity index better; But required processing step is more complicated, cost increase, decrease in yield, and various deviation accumulation has slackened number of steps on the contrary increases the performance boost brought.Therefore traditional step relief type DOE has met with the technical bottleneck being difficult to go beyond, urgently the renewal of new technology and breakthrough.
Utility model content
For the shortcoming of prior art, the purpose of this utility model is arranged by a kind of nanometer stick array of flexible design, realizes a kind of efficient, novel beam splitter.
For achieving the above object, the utility model adopts following technical scheme:
A kind of transmission-type silicon nano-array beam splitter, the silicon nanorod array of several period profile comprising crystalline silicon substrate and etch in crystalline silicon substrate; The silicon nanorod array of described each period profile comprises that several are equally distributed towards different rectangular parallelepiped silicon nanorods.
The length of described rectangular parallelepiped silicon nanorod is sub-wavelength.
The phase place of described rectangular parallelepiped silicon nanorod is calculated by G-S algorithm.
The transverse direction of described silicon nanorod array or longitudinal Cycle Length meet following formula d
x=λ
0/ Δ θ
x, d
y=λ
0/ Δ θ
y, wherein d
xfor horizontal Cycle Length, d
yfor longitudinal Cycle Length, Δ θ
xfor the angle between horizontal emergent light adjacent beams, Δ θ
xfor the angle between longitudinal emergent light adjacent beams.
Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot; Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot.
The operating wavelength range of described transmission-type silicon nano-array beam splitter is 1460nm to 1620nm.
The diffraction work face of beam splitting device adopts cycle arrangement, and each periodic packets is containing the nanometer stick array of some differences towards arrangement, and the size in cycle depends on that the angle between emergent light adjacent beams, the quantity in cycle depend on the size of launching spot.
At substrate silicon material surface direct etching nanometer stick array, form transmission-type total silicon beam splitter.
Nanometer rods is rectangular structure, and length, width and height are sub-wavelength dimensions.After nanometer rods layer is set up xoy coordinate system, wherein, x-axis is the horizontal direction of transmission-type silicon nano-array beam splitter, and y-axis is the longitudinal direction of transmission-type silicon nano-array beam splitter.The long side direction of nanometer rods represents major axis, and short side direction represents minor axis, and the included angle of major axis and x-axis, for regulating a phase, is incident on the left-handed of certain nanometer rods or dextrorotation rotatory polarization bundle, by the bit phase delay of experience 2 φ after transmission;
Nanometer stick array can adopt standard photolithography process manufacture: 1) coating photoresist; 2) electron-beam direct writing or photo-etching machine exposal; 3) develop; 4) ion etching.
Nanometer rods position phase Principles of Regulation: can be equivalent to half-wave plate during nanometer rods work, calculate with Jones matrix, the Jones vector of incident left/right rounding polarisation is respectively
The Jones matrix of known half-wave plate is
Wherein φ is the angle in the fast axle of half-wave plate and x direction, and the light vector so after nanometer rods outgoing is
As can be seen from formula (1), emergent light is after nanometer rods, and emergent light rotation direction is contrary, but experienced by the bit phase delay of 2 φ simultaneously.Therefore by the size (namely the anglec of rotation of nanometer rods in xoy coordinate plane) of adjustment φ, just can the position phase of regulation and control emergent light.
The nanometer rods that the utility model adopts is the rectangular parallelepiped micro-nano structure that characteristic dimension (long, high, wide) is less than operation wavelength, and nanometer rods is made up of silicon materials.Due to electromagnetic field by local in the small space being less than wavelength, its electromagnetic response characteristic is not only relevant to material but also also maintain close ties with characteristic dimension, and therefore external optical property (such as refractive index) shows anisotropy; Utilize this anisotropy, nanometer rods is made array arrangement, then in conjunction with suitable structure optimization measure, nanometer stick array can be realized accurate modulating action is carried out mutually to the position of incident light wave, its effect is similar to DOE, the ultimate principle of nanometer rods that Here it is structure beam splitter.Be with the difference of traditional DOE, nanometer stick array regulates a phase by means of only at element surface by rotating nanometer rods angle, and DOE is by step relief depth adjusted position phase; Therefore nanometer stick array only needs a step process just to achieve any position to regulate mutually, and DOE then needs multi-step process could realize more position to regulate mutually.Therefore, nanometer stick array realizes beam splitter and has obvious technical advantage, and it manufactures simple, and stability is high, good reliability, be easy to other total silicon element and device integrated, be the important breakthrough of micro-optic beam splitting device in design theory and principle.
Compare with traditional DOE beam splitter, the nanometer rods beam splitter involved by the utility model has the following advantages and good effect:
(1) total silicon nanometer rods beam splitter only needs rotation direction on workplace can realize the Spatial transmission of (0-360) ° scope, arbitrary face type Spatial transmission device can be equivalent to, and only need the processing step of traditional two step embossment DOE, be the important breakthrough of diffractive optical element design concept;
(2) the horizontal and vertical mismachining tolerance of traditional DOE is comparatively large to the performance impact of DOE, and particularly zero level hot spot is very responsive to error, and nanometer rods beam splitter far exceedes traditional DOE to the tolerance of mismachining tolerance;
(3) total silicon device not only reduces one coating process, and further improves stability and the reliability of device.
Accompanying drawing explanation
Fig. 1 is nanometer stick array cycle arrangement (2*2) schematic diagram in the utility model in embodiment 1.
Fig. 2 is the schematic diagram of the cellular construction of transmission-type silicon nano-array beam splitter in the utility model in embodiment 2.
Fig. 3 is the vertical view of the cellular construction of transmission-type silicon nano-array beam splitter in the utility model in embodiment 2.
Fig. 4 is the transformation efficiency figure of the transmission-type silicon nano-array beam splitter in the utility model in embodiment 2.
Fig. 5 is the monocycle phase mehtod figure that the 8*8 beam splitter optimal design in the utility model in embodiment 2 obtains.
Fig. 6 emulates the 8*8 beam splitting analogous diagram obtained in embodiment 2 in the utility model.
Fig. 7 is 8*8 beam splitter effect schematic diagram in embodiment 2 in the utility model.
Fig. 8 is the monocyclic structural representation of 8*8 beam splitter in embodiment 2 in the utility model.
Wherein, 1-nanometer rods; 2-silicon substrate; L is nanorod length, and W is nanometer rods width, and H is nanometer rods height, and C is nanometer rods cell size, and φ is nanometer rods corner.
Embodiment
With specific embodiment, the utility model is described in further detail by reference to the accompanying drawings below.
Embodiment 1
The total silicon nanometer stick array beam splitter that the utility model provides, adopt the version of cycle arrangement, Fig. 1 is the schematic diagram of arranging in the 2*2 cycle.A kind of transmission-type silicon nano-array beam splitter, the silicon nanorod array of 2*2 period profile comprising crystalline silicon substrate and etch in crystalline silicon substrate; The silicon nanorod array of described each period profile comprises that several are equally distributed towards different rectangular parallelepiped silicon nanorods.
The length of described rectangular parallelepiped silicon nanorod is sub-wavelength.
The phase place of described rectangular parallelepiped silicon nanorod is calculated by G-S algorithm.
The transverse direction of described silicon nanorod array or longitudinal Cycle Length meet following formula d
x=λ
0/ Δ θ
x, d
y=λ
0/ Δ θ
y, wherein d
xfor horizontal Cycle Length, d
yfor longitudinal Cycle Length, Δ θ
xfor the angle between horizontal emergent light adjacent beams, Δ θ
xfor the angle between longitudinal emergent light adjacent beams.
Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot; Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot.
The operating wavelength range of described transmission-type silicon nano-array beam splitter is 1460nm to 1620nm.
Total silicon nanometer stick array beam splitter, works in transmission mode.
Embodiment 2
The present embodiment is the implementation process utilizing total silicon nanometer stick array to construct transmission-type beam splitter.
As embodiment, Selection Center operation wavelength is optical communicating waveband λ
0=1547.5nm, even beam splitting number is 8*8, the angle intervals Δ θ that adjacent level is secondary
xwith Δ θ
ybe 10 °.
First, determine medium nanometer rods unit basic structure, as Figure 2-3, nanometer rods unit basic structure comprises substrate and nanometer rods, and is crystalline silicon.Crystalline silicon has lower absorption at this wave band, thus has high bit and modulate mutually and transformation efficiency.
Second step, optimizes total silicon nanometer rods cellular construction parameter.This step completes based on electromagnetic simulation software platform (as CST Studio, Comsol etc.).Emulation is with left-handed (or dextrorotation) rotatory polarization vertical incidence, using the transformation efficiency of dextrorotation (or left-handed) rotatory polarization as optimization object, and scanning nano rod length L, width W and height H, nanometer rods cell size C are to obtaining optimal parameter.Require that cross polarization (left-handed → dextrorotation, or dextrorotation → left-handed) transformation efficiency is the highest, polarization (left-handed → left-handed, or dextrorotation → dextrorotation) transformation efficiency is minimum in the same way.Calculate through optimizing, the parameter that is optimized is: L=450nm, W=190nm, H=920nm, C=620nm.Fig. 4 optimizes the transformation efficiency figure obtained, and can find out that the high-level efficiency achieving cross polarization near centre wavelength transforms and achieves effective suppression of polarization in the same way simultaneously.
3rd step, design DOE structural parameters.According to formula: d
x=λ
0/ Δ θ
x, d
y=λ
0/ Δ θ
ycalculate the DOE cycle, the cycle obtaining both direction is d
x=17.7 μm, d
y=17.7 μm; According to m=d
x/ C, n=d
y/ C the unit number obtained in the monocycle is m=29, n=29.
4th step, the monocyclic phase mehtod of design DOE.Classical DOE optimized algorithm can be adopted to complete (as G-S algorithm etc.), be main optimizing index with diffraction efficiency, homogeneity etc., and then the corner of each nanometer rods is determined by formula (1), progressively number of steps can be increased, to obtaining higher performance according to the desired value calculated.Fig. 5 is the local arrangement optimizing the 512 step phase mehtod figure obtained, and each unit nanometer rods anglec of rotation φ is the half of this unit phase place size.According to simulated program estimation, its diffraction efficiency can to 78.3%, and homogeneity is 0.06%.
5th step, using the phase mehtod of above-mentioned design as single cycle phase mehtod, the nanometer rods DOE of structure periodic structure distribution, can complete the method for designing of required light-splitting device.The quantity in cycle depends on the size of launching spot, requirement can envelope launching spot to avoid energy loss.Fig. 6 emulates the 8*8 output field distribution obtained.Fig. 7 is beam splitting effect schematic diagram.From Fig. 6 and Fig. 7, all can see that the spectrophotometric result penetrating formula silicon nano-array beam splitter provided by the utility model is very good.
Light-splitting device manufacture can continue to use previous process steps.
As follows according to the transmission-type silicon nano-array beam splitter that said method is prepared:
A kind of transmission-type silicon nano-array beam splitter, the silicon nanorod array of 8*8 period profile comprising crystalline silicon substrate and etch in crystalline silicon substrate; The silicon nanorod array of described each period profile comprises that several are equally distributed towards different rectangular parallelepiped silicon nanorod (in the silicon nanorod array of each period profile silicon nanorod towards as shown in Figure 8).
The long L=450nm of described rectangular parallelepiped silicon nanorod, wide W=190nm, high H=920nm,
The phase place of described rectangular parallelepiped silicon nanorod is calculated by G-S algorithm.
The horizontal and vertical periodicity of described transmission-type silicon nano-array beam splitter is all 28.
The horizontal Cycle Length d of described silicon nanorod array
x=17.7 μm, longitudinal Cycle Length d
y=17.7 μm, the angle Δ θ between horizontal emergent light adjacent beams
xbe 10 °, the angle Δ θ between longitudinal emergent light adjacent beams
xit is 10 °.
Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot; Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot.
The operating wavelength range of described transmission-type silicon nano-array beam splitter is 1547.5nm.
Claims (6)
1. a transmission-type silicon nano-array beam splitter, is characterized in that: the silicon nanorod array of several period profile comprising crystalline silicon substrate and etch in crystalline silicon substrate; The silicon nanorod array of described each period profile comprises that several are equally distributed towards different rectangular parallelepiped silicon nanorods.
2. a kind of transmission-type silicon nano-array beam splitter according to claim 1, is characterized in that: the length of described rectangular parallelepiped silicon nanorod is sub-wavelength.
3. a kind of transmission-type silicon nano-array beam splitter according to claim 1 or 2, is characterized in that: the phase place of described rectangular parallelepiped silicon nanorod is calculated by G-S algorithm.
4. a kind of transmission-type silicon nano-array beam splitter according to claim 1 or 2, is characterized in that: the transverse direction of described silicon nanorod array or longitudinal Cycle Length meet following formula d
x=l
0/ Δ θ
x, d
y=l
0/ Δ θ
y, wherein d
xfor horizontal Cycle Length, d
yfor longitudinal Cycle Length, Δ θ
xfor the angle between horizontal emergent light adjacent beams, Δ θ
xfor the angle between longitudinal emergent light adjacent beams.
5. a kind of transmission-type silicon nano-array beam splitter according to claim 3, is characterized in that: longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot; Longitudinal periodicity of described silicon nanorod array and the product of longitudinal Cycle Length are more than or equal to the size of longitudinally upper launching spot.
6. a kind of transmission-type silicon nano-array beam splitter according to claim 1 or 2 or 5, is characterized in that: the operating wavelength range of described transmission-type silicon nano-array beam splitter is 1460nm to 1620nm.
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