CN1577555A - 磁记录再生方法,磁记录再生装置,磁头 - Google Patents
磁记录再生方法,磁记录再生装置,磁头 Download PDFInfo
- Publication number
- CN1577555A CN1577555A CN 200410062429 CN200410062429A CN1577555A CN 1577555 A CN1577555 A CN 1577555A CN 200410062429 CN200410062429 CN 200410062429 CN 200410062429 A CN200410062429 A CN 200410062429A CN 1577555 A CN1577555 A CN 1577555A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- layer
- magnetic recording
- magnetization
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 421
- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000001172 regenerating effect Effects 0.000 title claims description 49
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000005415 magnetization Effects 0.000 claims description 119
- 238000011069 regeneration method Methods 0.000 claims description 31
- 230000008929 regeneration Effects 0.000 claims description 30
- 239000010408 film Substances 0.000 description 56
- 239000000758 substrate Substances 0.000 description 47
- 239000000463 material Substances 0.000 description 32
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 29
- 238000003475 lamination Methods 0.000 description 26
- 230000005389 magnetism Effects 0.000 description 25
- 229910052697 platinum Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 230000004907 flux Effects 0.000 description 13
- 229910052763 palladium Inorganic materials 0.000 description 12
- 239000000314 lubricant Substances 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 4
- 229910002837 PtCo Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000010952 cobalt-chrome Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910000828 alnico Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001050 lubricating effect Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910019222 CoCrPt Inorganic materials 0.000 description 2
- 229910001047 Hard ferrite Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001802 infusion Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 fluorinated alkyl compound Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Landscapes
- Magnetic Record Carriers (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003195533A JP2005032330A (ja) | 2003-07-11 | 2003-07-11 | 磁気記録再生方法、磁気記録再生装置、磁気ヘッド |
JP2003195533 | 2003-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1577555A true CN1577555A (zh) | 2005-02-09 |
Family
ID=34206320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200410062429 Pending CN1577555A (zh) | 2003-07-11 | 2004-07-07 | 磁记录再生方法,磁记录再生装置,磁头 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2005032330A (ja) |
CN (1) | CN1577555A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8514519B2 (en) | 2009-10-21 | 2013-08-20 | HGST Netherlands B.V. | Device for generating high frequency magnetic fields in a rest-frame of a magnetic medium |
-
2003
- 2003-07-11 JP JP2003195533A patent/JP2005032330A/ja active Pending
-
2004
- 2004-07-07 CN CN 200410062429 patent/CN1577555A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2005032330A (ja) | 2005-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100560091B1 (ko) | 자기 기록 매체 및 자기 기록 장치 | |
US6713197B2 (en) | Perpendicular magnetic recording medium and magnetic recording apparatus | |
CN1079969C (zh) | 磁致电阻磁头和磁盘装置 | |
CN1136693A (zh) | 磁记录媒体和使用该磁记录媒体的磁存储装置 | |
US20090073599A1 (en) | Perpendicular magnetic recording medium and magnetic recording and reproducing apparatus using the same | |
JP2004348952A (ja) | 垂直記録ディスク用軟磁性膜 | |
CN100421155C (zh) | 垂直磁记录介质和磁记录/再现装置 | |
JP2817501B2 (ja) | 磁気ディスク装置及びそれに用いる磁気ヘッド | |
WO2005093719A1 (en) | Perpendicular magnetic recording medium using soft magnetic layer which suppresses noise generation, and perpendicular magnetic recording apparatus therewith | |
US6632520B1 (en) | Magnetic film | |
JP4255826B2 (ja) | 磁気記録媒体及び磁気記録媒体の製造方法並びに磁気記録再生装置 | |
JP2004259423A (ja) | 磁気記録媒体及びその製造方法並びに磁気記録装置 | |
JP2004303375A (ja) | 垂直磁気記録媒体、及び磁気記録再生装置 | |
CN1366298A (zh) | 用于超高密度记录的垂直磁薄膜 | |
US6809901B2 (en) | Low moment material for magnetic recording head write pole | |
JP2001283428A (ja) | 垂直磁気記録媒体及び垂直磁気記録再生装置 | |
JP2004062935A (ja) | 垂直磁気記録媒体及び磁気記録再生装置 | |
JP3913967B2 (ja) | 垂直磁気記録媒体及び垂直磁気記録再生装置 | |
CN1577555A (zh) | 磁记录再生方法,磁记录再生装置,磁头 | |
US7402348B2 (en) | Perpendicular magnetic recording medium | |
WO2007074913A1 (en) | Magentic recording medium and magnetic recording and reproducing device | |
US20130155542A1 (en) | Perpendicular magnetic recording medium with grain boundary controlling layers | |
JP2004118977A (ja) | 垂直磁気記録媒体及び磁気記録再生装置 | |
JP3445537B2 (ja) | 垂直磁気記録媒体及び磁気記憶装置 | |
CN1577498A (zh) | 薄膜磁头、磁头万向组件及硬盘装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |