CN1571132A - 微型半导体器件封装低弧度焊线的形成工艺 - Google Patents

微型半导体器件封装低弧度焊线的形成工艺 Download PDF

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CN1571132A
CN1571132A CNA2004100148471A CN200410014847A CN1571132A CN 1571132 A CN1571132 A CN 1571132A CN A2004100148471 A CNA2004100148471 A CN A2004100148471A CN 200410014847 A CN200410014847 A CN 200410014847A CN 1571132 A CN1571132 A CN 1571132A
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semiconductor device
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严红月
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Changdian Technology Management Co ltd
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Abstract

本发明涉及一种微型半导体器件封装低弧度焊线形成的工艺。属半导体器件封装技术领域。其特点是焊接低弧度焊线的焊线机焊头运动轨迹分三步进行：第一步、从第一焊点A在Z方向垂直向上运动一段高度H1并朝背离第二焊点B的逆向运动一段距离S1；第二步、在第一步轨迹终点在Z方向再垂直向上运动一段高度H2并朝背离第二焊点B的逆向运动一段距离S2；第三步、在第二步轨迹终点在Z方向垂直而上运动弧形落在第二焊点B位置。本发明通过改变焊头运动轨迹来形成微型半导体器件封装低弧度焊线。因此能满足微型半导体封装的要求。

Description

微型半导体器件封装低弧度焊线的形成工艺
技术领域：
本发明涉及一种微型半导体器件封装低弧度焊线形成的工艺。属半导体器件封装技术领域。
背景技术：
封装微型半导体器件是表面组装技术的基础核心。主要用于封装场效应晶体管、肖特基二极管、数字晶体管等产品。其体积小、重量轻、电性能良好，更符合电子产品发展的趋势。
从微型半导体器件侧面示意图图1中可以看出，器件塑封体树脂总高度0.5mm，引线框架3′底部向上打弯深度0.1mm，考虑器件可靠性，金线2′与塑封体树脂表面距离须保留0.1mm，那么在芯片1′厚度100μm±10μm的条件下，要求焊线弧高控制在中心值0.1mm±5μm的范围。焊线弧度、形态取决于焊头运动轨迹。普通弧度焊线其焊头运动轨迹是从第一焊点在Z方向垂直而上弧形落在第二焊点位置。这种工艺不能形成焊线弧高在0.1mm±5μm的低弧度，因此不能满足微型半导体封装的要求。
发明内容：
本发明的目的在于克服上述不足，提供一种微型半导体器件封装低弧度焊线的形成工艺。
本发明的目的是这样实现的：一种微型半导体器件封装低弧度焊线的形成工艺，其特点是焊接低弧度焊线的焊线机焊头运动轨迹分三步进行：
第一步、从第一焊点A在Z方向垂直向上运动一段高度H1并朝背离第二焊点B的逆向运动一段距离S1；
第二步、在第一步轨迹终点在Z方向再垂直向上运动一段高度H2并再朝背离第二焊点B的逆向运动一段距离S2；
第三步、在第二步轨迹终点在Z方向垂直而上运动弧形落在第二焊点B位置。
本发明通过改变焊头运动轨迹来形成微型半导体器件封装低弧度焊线。因此能满足微型半导体封装的要求。
附图说明：
图1为采用低弧度焊线封装的微型半导体器件侧面示意图。
图2为本发明的典型平坦焊线低弧度轨迹图。
图3为本发明的焊线低弧度形态图。
具体实施方式：
本发明为一种微型半导体器件封装低弧度焊线的形成工艺。参见图2，图2为典型平坦低弧度轨迹图。低弧度的运动轨迹分三步进行：
第一步、从第一焊点A在Z方向垂直向上运动一段高度H1并朝背离第二焊点B的逆向运动一段距离S1；
第二步、在第一步轨迹终点在Z方向再垂直向上运动一段高度H2并朝背离第二焊点B的逆向运动一段距离S2；
第三步、在第二步轨迹终点在Z方向垂直而上运动弧形落在第二焊点B位置。
从图2中可以看出，低弧度焊线有连续二次不同逆向高度、逆向距离的轨迹特征来形成图3的低弧度状态。由此，逆向高度、逆向距离是控制低弧度的关键。
实际生产工艺应用上，焊头运动状态受控于焊线机各种应用模式下的参数设定值。低弧度生产应用一般采用低弧度模式，模式中的高度(KinkHeight)、逆向距离(Rever Motion)、弧度系数(Loop Factor)、平坦长度(Flat Length)、Z方向(Csp Z Inflection)、XY方向(Csp XY Inflection)几项参数的设定值及相互组合，对弧度大小有着很重要的影响。通过多次实验发现，不同数值的组合，其弧高大小不同，在高度为同一数值，改变逆向幅度数值大小，弧高随着数值大小而相应增减；在高度、逆向幅度设定某一认可值，改变弧度系数、Z方向和XY方向数值大小，弧高将稍有变化。在生产工艺应用上，采用如下数值范围来获取低弧度的状态：
高度H1、H2                        0.8～1.2mils
逆向距离S1、S2                    1～1.5mils
弧度系数                             -0.5～1.0mils
平坦长度L＝(S2 2+H2 2)1/2          10～12mils
Z方向                                0～1mils
XY方向                               -1～1.5mm。
同时，选用抗拉强度大、延伸率略低的焊线来应用在低弧度焊线形成工艺上，对平坦的低弧度形成有很大帮助，并弥补了由于二次逆向易造成球颈拉力强度偏小的缺陷，焊线用金线抗拉强度在9％～15％之间、延伸率在3％～6％之间。

Claims (3)

1、一种微型半导体器件封装低弧度焊线的形成工艺，其特征在于焊接低弧度焊线的焊线机焊头运动轨迹分三步进行：
第一步、从第一焊点A在Z方向垂直向上运动一段高度H1并朝背离第二焊点B的逆向运动一段距离S1；
第二步、在第一步轨迹终点在Z方向再垂直向上运动一段高度H2并朝背离第二焊点B的逆向运动一段距离S2；
第三步、在第二步轨迹终点在Z方向垂直而上运动弧形落在第二焊点B位置。
2、根据权利要求1所述的一种微型半导体器件封装低弧度焊线的形成工艺，其特征在于焊线机的参数设定范围如下：
高度H1、H2                              0.8～1.2mils
逆向距离S1、S2                          1～1.5mils
弧度系数                                   -0.5～1.0mils
平坦长度L＝(S2 2+H2 2)1/2                10～12mils
Z方向                                      0～1mils
XY方向                                     -1～1.5mm。
3、根据权利要求1或2所述的一种微型半导体器件封装低弧度焊线的形成工艺，其特征在于低弧度焊线抗拉强度9％～15％，延伸率3％～6％。
CNB2004100148471A 2004-05-09 2004-05-09 微型半导体器件封装低弧度焊线的形成工艺 Expired - Lifetime CN1328771C (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854094A (zh) * 2019-11-27 2020-02-28 中国兵器工业集团第二一四研究所苏州研发中心 大尺寸芯片的键合线低弧键合方法
CN116372414A (zh) * 2023-06-06 2023-07-04 赛晶亚太半导体科技(北京)有限公司 一种用于st产品的相邻两门极与金属线连接方法

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JP3762475B2 (ja) * 1995-04-10 2006-04-05 富士通株式会社 ワイヤボンディング方法及び半導体装置
JPH08330346A (ja) * 1995-05-31 1996-12-13 Nec Kyushu Ltd 半導体装置の製造方法
JP3181229B2 (ja) * 1996-07-12 2001-07-03 富士通株式会社 半導体装置及びその製造方法及びその実装方法及びリードフレーム及びその製造方法
CN1303676C (zh) * 2002-06-18 2007-03-07 矽品精密工业股份有限公司 用以缩短打线长度的半导体封装件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854094A (zh) * 2019-11-27 2020-02-28 中国兵器工业集团第二一四研究所苏州研发中心 大尺寸芯片的键合线低弧键合方法
CN116372414A (zh) * 2023-06-06 2023-07-04 赛晶亚太半导体科技(北京)有限公司 一种用于st产品的相邻两门极与金属线连接方法
CN116372414B (zh) * 2023-06-06 2023-08-11 赛晶亚太半导体科技(北京)有限公司 一种用于st产品的相邻两门极与金属线连接方法

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