CN1554978A - High-speed electro-optical phase control array two-dimensional laser beam scanner - Google Patents
High-speed electro-optical phase control array two-dimensional laser beam scanner Download PDFInfo
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- CN1554978A CN1554978A CNA2003101226219A CN200310122621A CN1554978A CN 1554978 A CN1554978 A CN 1554978A CN A2003101226219 A CNA2003101226219 A CN A2003101226219A CN 200310122621 A CN200310122621 A CN 200310122621A CN 1554978 A CN1554978 A CN 1554978A
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- 239000013078 crystal Substances 0.000 claims abstract description 56
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 3
- 230000035800 maturation Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000000644 propagated effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
A high-speed electro-optical phased array two-dimensional laser beam scanner is characterized by comprising the following components: sequentially comprises the following steps along the advancing direction of the light beam; the device comprises a plane diffraction grating, a collimating lens, a horizontal scanning component, a vertical scanning component, an electrode socket for the horizontal scanning component to insert and an electrode socket for the vertical scanning component to insert; the plane diffraction grating is positioned on the focal plane of the collimating lens; the horizontal scanning component is a crystal flat plate array formed by combining a plurality of lithium niobate crystal flat plates with the same structure and cut along the direction of an optical axis, electrodes with equal length difference from short to long are sequentially arranged between each lithium niobate crystal flat plate, and the series of electrodes are inserted into an electrode socket; the vertical scanning component and the horizontal scanning component have the same structure, but the placement directions of the vertical scanning component and the horizontal scanning component are mutually vertical. The invention has the characteristics of high scanning speed, high precision, no mechanical motion, simple structure, stability, reliability and certain integration level.
Description
Technical field
The present invention relates to laser beam scanner, particularly a kind of high speed electro-optical phased array two-dimensional laser beam scanning device.Its critical piece is the dull and stereotyped modulation array of the vertical one-dimensional crystal of assigning with two of diffraction grating, the size that changes modulation array voltage can realize the two-dimensional scan of light beam, be mainly used in laser radar, technical fields such as laser communication, laser 3D demonstration and aiming tracking.
Background technology
The laser beam scanning system is at laser radar, and laser communication has important use in the fields such as laser 3D demonstration and aiming tracking, is a focus of current research.Laser beam scanner has two kinds of analogue type (scanning angle continuous variable) and numeric types (fixedly smallest offset angle).Usually used two-dimentional light beam scanner adopts the electromechanical scanning theory mostly, belongs to analogue type scanning, and its shortcoming is influenced by the mechanical drive precision, and scanning accuracy is limited, and the microminiaturization degree is low.Though the electric light that another kind of developed recently gets up control liquid crystal grating digital deflection device is than practicability, its range of deflection is very limited, is restricted in laser communication, laser radar with the use of taking aim in the technical field.
The optical phased array optical beam scanner obtains required deflection by the phase place of controlling each phase control unit and points to, ([1] is referring to James A for elder generation's technology [1-2], Mark Lasher, Yeshaiahn Fainmanet al, ' A PLZT-based dynamic diffractive optical element for highspeed, random-access beaming steering '. [C] Proc.SPIE, 1997,3131:124-131. [2] referring to: James A.Thomas andYeshaiahu Fainman. ' Optimal cascade operation of opticalphased-array beam deflectors. ') all adopt diffraction optical element (DOE) to realize the scanning and the deflection of light beam, the method is because phase control unit is small-sized, producting process difficulty is big, the cost height, and be difficult to eliminate the optical problem that diffraction brings, when the number of phase control unit increased, its sweep limit can sharply descend.([3] referring to Zhu Yuxin, phased array optical equipment and method, the patent No.: 97119771 for elder generation's technology [3-4]; [4] referring to Lv Xiupin, Sun Xiuping, Feng Kecheng, Liu Weiqi, " based on the design and the simulation of the optical phased array scanner of PLZT material ", Chinese laser, 2003,30 (4):, still have and to eliminate diffraction influence and the difficult shortcoming of high-precision device realization though 51-52) on the former basis, improve.Elder generation's technology [5] is (referring to DavidA.Scrymgeour, Yaniv Barad, Venkatraman Gopaian, Kevin T.Gahagan, Quanxi Jia, Terence E. Mitchell, and Jeanne M. Robinson. ' Large-angle electro-optic laser scanner on LiTaO3 fabricated byin situ monitoring of ferroelectric-domain micropatterning ' .Applied Optics, 2001,40 (34): 6236-6241) adopt dihedral LiTaO
3The chip architecture design has realized the beam deflection of polarizers of big angle scope, but it is too big also to have change in voltage, the shortcoming of incident beam restricted diameter.
Summary of the invention
The technical problem to be solved in the present invention is for fear of the deficiency that overcomes above-mentioned technology formerly, a kind of high speed electro-optical phased array two-dimensional laser beam scanning device is provided, and characteristics of the present invention are that sweep velocity is fast, precision is high, do not have mechanical motion, simple in structure, reliable and stable and certain integration level arranged.
The present invention utilizes LiNdO
3The electrooptical effect of crystal realizes the two-dimensional scan of light beam on the basis of modulation two dimensional phased battle array.
Technical solution of the present invention is as follows:
A kind of high speed electro-optical phased array two-dimensional laser beam scanning device, it is characterized in that its formation is: the direction of advancing along light beam comprises successively; Plane diffraction grating, collimation lens, horizontal scanning assembly, vertical scanning assembly, electrode socket that the simple scan assembly that supplies water in addition plugs and the electrode socket that plugs for the vertical scanning assembly; Described plane diffraction grating is positioned on the focal plane of collimation lens; Described horizontal scanning assembly is the crystal flat plate array that is combined by the identical lithium columbate crystal flat board of structure that polylith cuts along optical axis direction, and being provided with the electrode of equal difference length from short to long between each piece lithium columbate crystal flat board in regular turn, described a series of electrodes insert electrode sockets; Described vertical scanning assembly is identical with described horizontal scanning modular construction, and just the orientation of the two storing is vertical mutually.
Described vertical scanning assembly back adds a collimation lens, can realize closely (on the focal plane) scanning, does not add collimation lens and then realizes long-range scanning, looks concrete application and adds.
The preparation method of described high speed electro-optical phased array two-dimensional laser beam scanning device is characterized in that the concrete steps of this method are as follows:
1. determine LASER Light Source and scanning wavelength: it is little that semiconductor laser has a volume, in light weight, long service life and commodity are fit to do light source of the present invention than characteristics such as maturations very much, are 0.8 μ m according to type that has semiconductor laser now and characteristics selection scanning wavelength;
2. the selection of crystalline material: select LiNbO
3Crystal is as the material of phased array modulator;
3. the selection of the coupling of size and grating: the characteristics by output bore, wafer thickness and plane diffraction grating are carried out the coupling of size and the selection of grating, generally speaking, wafer thickness can be cut to 0.5mm-1mm, determine that with the relation of focal length grating constant is 1/50 according to the distance between output caliber size and the divided beams, lens clear aperture Φ 10mm, focal length 20mm;
4. the cutting of crystal: what the present invention used is the cross electro-optical effect of parallel light when optical axis of crystal direction is propagated, and finds out the optical axis of crystal during cutting earlier, cuts along the optical axis of crystal, and the xy plane is the plane of vertical optical axis, and E is the applied field direction.The effective electrooptical coefficient of the wafer that cuts out like this is 7 (units: 10
-12M/V).Cutting thickness is 0.5mm.
5. make step electrode: method for making is to plate layer of copper respectively on the two sides of a crystal flat board, determine the change in voltage scope by the scanning angle scope, after determining required electrode length, erode unwanted part, stay Len req, draw joint then, each electrode contact inserts electrode socket.
6. assembling.
Ultimate principle of the present invention is as follows, and crystal is under the effect of highfield, and its birefringence can change, and is referred to as electrooptical effect, utilizes the deflection of the electrooptical effect realization light beam of crystal.Adding electric field for along the normal beam direction of propagation crystal as the electricity consumption level, is h as the thickness of crystal flat board, and length is d, and electrode length is d
e, light beam by crystal after its bit phase delay be:
In the formula, δ is a bit phase delay, and λ is the incident wave wavelength, n
oBe the o optical index, γ is the electrooptical coefficient of crystal, U is institute's making alive, this bit phase delay will make light beam deflect, and can be found out by (1) formula, if add identical voltage to crystal, because the difference of electrode length, its bit phase delay difference, the yawing moment difference of light beam then is according to this principle, identical wafer is superimposed, plug different electricity levels respectively, incide on the crystal assembly that has added voltage when N restraints light, every bundle light all can deflect during outgoing, electrode length equal deflection direction is identical, the different yawing moment differences of electrode length, the effective aperture of establishing crystal assembly is D, then the beam deflection angle is
Wherein
It is maximum electrooptical modulation number of wavelengths.If the voltage continuous variable is then realized one dimension continuous sweep.
Technique effect of the present invention, through preliminary experiment show the present invention have that sweep velocity is fast, precision is high, do not have mechanical motion, simple in structure, reliable and stable and the characteristics of certain integration level are arranged.
Description of drawings:
Fig. 1 is a basic block diagram of the present invention
Fig. 2 is a principle of the invention synoptic diagram
Fig. 3 is LiNbO
3The dull and stereotyped level modulation array junctions of crystal composition
Fig. 4 is LiNbO
3The dull and stereotyped vertical modulation array junctions of crystal composition
Fig. 5 is beam level scanning synoptic diagram
Fig. 6 is a light beam vertical scanning synoptic diagram
Fig. 7 LiNbO
3The cutting synoptic diagram of crystal
Fig. 8 is the LiNbO of well cutting
3Wafer
Embodiment
See also Fig. 1 earlier, Fig. 1 is a basic block diagram of the present invention, and as seen from the figure, the formation of high speed electro-optical phased array two-dimensional laser beam scanning device of the present invention is: the direction of advancing along light beam comprises successively; Plane diffraction grating 1, collimation lens 2, horizontal scanning assembly 3, vertical scanning assembly 4, electrode socket 5 that the simple scan assembly 3 that supplies water in addition plugs and the electrode socket 6 that plugs for vertical scanning assembly 4; Described plane diffraction grating 1 is positioned on the focal plane of collimation lens 2; Described horizontal scanning assembly 3 is the crystal flat plate arrays that combined by the identical lithium columbate crystal flat board 31 of structure that polylith cuts along optical axis direction, and being provided with the electrode 32 of equal difference length from short to long between each piece lithium columbate crystal flat board 31 in regular turn, described a series of electrodes 32 insert electrode sockets 5; Described vertical scanning assembly 4 is the crystal flat plate arrays that combined by the identical lithium columbate crystal flat board 41 of structure that polylith cuts along optical axis direction, and being provided with the electrode 42 of equal difference length from short to long between each piece lithium columbate crystal flat board 41 in regular turn, a series of electrodes 42 insert electrode sockets 6; Described vertical scanning assembly 4 is identical with described horizontal scanning assembly 3 structures, and just the orientation of the two storing is vertical mutually.
Beam of laser is by plane diffraction grating 1, because grating diffration, light beam is divided into N * N bundle along the different diffraction direction, grating is positioned at the focal plane of lens 2, become N * N behind the light beam scioptics 2 and restraint directional light, incide modulation array respectively, every wafer size and incident beam are complementary in the modulation array.When applying identical voltage to modulation array, because the difference of electrode length will produce different phase delay, this linear delay will produce the deflection of light beam, change the continuous sweep that voltage swing can be realized light beam.
The horizontal scanning synoptic diagram is seen Fig. 5, and two identical crystal assemblies are vertically placed, and two-dimensional scan has just realized that the vertical scanning synoptic diagram is seen Fig. 6.
Preparation method below in conjunction with the drawings and specific embodiments explanation high speed electro-optical phased array two-dimensional laser beam scanning device of the present invention:
Utilize the high speed electro-optical phased array two-dimensional laser beam scanning device of an output of above-mentioned principle design bore for 7mm * 7mm.Size can be adjusted as required.Its concrete steps are as follows:
(1) determine LASER Light Source and scanning wavelength: it is little that semiconductor laser has a volume, in light weight, long service life and commodity are fit to do light source of the present invention than characteristics such as maturations very much, are 0.8 μ m according to type that has semiconductor laser now and characteristics selection scanning wavelength.Also can change according to concrete use.
(2) selection of crystalline material: select LiNbO
3Crystal is as the material of phased array modulator, and it has stable performance, and size is big, is easy to growth, and electrooptical coefficient is higher, advantages such as low price.
(3) selection of the coupling of size and grating: the characteristics by output bore, wafer thickness and plane diffraction grating are carried out the coupling of size and the selection of grating.Generally speaking, wafer thickness can be cut to 0.5mm-1mm, and a branch of light is by diffraction grating, and diffraction pattern is determined by following formula:
In the formula, θ is an angle of diffraction, and m is that the principal maximum level is inferior, (a+b) is grating constant.Distance, delta x between two principal maximums is:
In the formula, f is the focal length of lens.
Generally speaking, wafer thickness can be cut to 0.5mm-1mm, determines that grating constant is 1/50, lens clear aperture Φ 10mm, focal length 20mm according to the distance between output caliber size and the divided beams with the relation of focal length.
(4) cutting of crystal: what the present invention used is the cross electro-optical effect of parallel light when optical axis of crystal direction is propagated, and earlier the optical axis of crystal is found out during cutting, cuts according to direction shown in Figure 7, among Fig. 7, the z axle is the optical axis of crystal, and the xy plane is the plane of vertical optical axis, and E is the applied field direction.The effective electrooptical coefficient of the wafer that cuts out like this is 7 (units: 10
-12M/V).Cutting thickness is 0.5mm.In the present invention, the electrooptical coefficient of crystal is big more, and the beam deflection angle under the identical voltage conditions will be big more, can adopt the also cutting mode of corresponding increase of the big but electrooptical coefficient of other waste under the situation that crystalline size allows.
(5) make step electrode: method for making: the two sides at a crystal flat board plates layer of copper respectively, determine the change in voltage scope by the scanning angle scope, after determining required electrode length, erode unwanted part, stay Len req, draw joint (shown in 07,08 among Fig. 3 and Fig. 4) then.Electrode contacts at different levels insert electrode socket (shown in 05,06 among Fig. 3 and Fig. 4), and socket can directly connect power supply.When wavelength was 0.8 μ m, the refractive index of crystal o light was 2.2571, associating (1) formula and (2) Shi Kede:
As the maximum 600V that adds as, extreme electrode length is 25mm, and estimating the maximum scan scope by (5) formula is 0.345mrad.Want to increase sweep limit, can increase modulation voltage, the lengthening electrode length improves cutting mode and improves the crystal electrooptical coefficient, is 0.6328 μ m as wavelength, and the optimum Cutting of crystal can make electrooptical coefficient up to 40.3 (units: 10
-12M/V), sweep limit improves 6 times under the same terms.In addition, also can reduce to export bore and wafer thickness, if any large-sized crystal, sweep limit can improve 2-4 doubly under the same terms.
(6) assembling.Each element of making installed according to structural group shown in Figure 1 just constituted a high speed electro-optical phased array two-dimensional laser beam scanning device.Experimental result shows that it is capable that its sweep velocity can reach 100ns/.
Claims (3)
- A kind of high speed electro-optical phased array two-dimensional laser beam scanning device, it is characterized in that its formation is: the direction of advancing along light beam comprises successively; Plane diffraction grating (1), collimation lens (2), horizontal scanning assembly (3), vertical scanning assembly (4), electrode socket (5) that the simple scan assembly (3) that supplies water in addition plugs and the electrode socket (6) that plugs for vertical scanning assembly (4); Described plane diffraction grating (1) is positioned on the focal plane of collimation lens (2); Described horizontal scanning assembly (3) is by the crystal flat plate array of polylith along identical lithium columbate crystal flat board (31) combination of the structure of optical axis direction cutting, and being provided with the electrode (32) of equal difference length from short to long between each piece lithium columbate crystal flat board (31) in regular turn, described a series of electrodes (32) insert electrode socket (5); Described vertical scanning assembly (4) is by the crystal flat plate array of polylith along identical lithium columbate crystal flat board (41) combination of the structure of optical axis direction cutting, and being provided with the electrode (42) of equal difference length from short to long between each piece lithium columbate crystal flat board (41) in regular turn, a series of electrodes (42) insert electrode socket (6); Described vertical scanning assembly (4) is identical with described horizontal scanning assembly (3) structure, and just the orientation of the two storing is vertical mutually.
- 2, high speed electro-optical phased array two-dimensional laser beam scanning device according to claim 1 is characterized in that described vertical scanning assembly (4) back adds a collimation lens.
- 3, the preparation method of high speed electro-optical phased array two-dimensional laser beam scanning device according to claim 1 is characterized in that the concrete steps of this method are as follows:1. determine LASER Light Source and scanning wavelength: it is little that semiconductor laser has a volume, in light weight, long service life and commodity are fit to do light source of the present invention than characteristics such as maturations very much, are 0.8 μ m according to type that has semiconductor laser now and characteristics selection scanning wavelength;2. the selection of crystalline material: select LiNbO 3Crystal is as the material of phased array modulator;3. the selection of the coupling of size and grating: the characteristics by output bore, wafer thickness and plane diffraction grating are carried out the coupling of size and the selection of grating, generally speaking, wafer thickness can be cut to 0.5mm-1mm, determine that with the relation of focal length grating constant is 1/50 according to the distance between output caliber size and the divided beams, lens clear aperture Φ 10mm, focal length 20mm;4. the cutting of crystal: what the present invention used is the cross electro-optical effect of parallel light when optical axis of crystal direction is propagated, and finds out the optical axis of crystal during cutting earlier, cuts along the optical axis of crystal, and the xy plane is the plane of vertical optical axis, and E is the applied field direction.The effective electrooptical coefficient of the wafer that cuts out like this is 7 (units: 10 -12M/V).Cutting thickness is 0.5mm.5. make step electrode: method for making is to plate layer of copper respectively on the two sides of a crystal flat board, determine the change in voltage scope by the scanning angle scope, after determining required electrode length, erode unwanted part, stay Len req, draw joint then, each electrode contact inserts electrode socket.6. assembling.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100383572C (en) * | 2006-05-08 | 2008-04-23 | 中国科学院上海光学精密机械研究所 | Electric control phase shift space optical bridge |
| CN100570460C (en) * | 2008-05-21 | 2009-12-16 | 中国科学院上海光学精密机械研究所 | Electro-optical control two-dimensional laser beam scanning array |
| CN101178487B (en) * | 2006-11-10 | 2010-12-22 | 精工爱普生株式会社 | Electro optic device, method of manufacturing electro optic device, and scanning type optical apparatus |
| CN101762889B (en) * | 2010-01-19 | 2011-07-06 | 哈尔滨工业大学 | High-accuracy control method based on optical phased array multiple isocandela laser beams |
| CN102866394A (en) * | 2012-10-17 | 2013-01-09 | 上海师范大学 | Laser scanning side lobe suppression device of phased array |
| CN105814451A (en) * | 2013-12-10 | 2016-07-27 | 三菱电机株式会社 | Laser radar device |
| CN107807362A (en) * | 2017-11-22 | 2018-03-16 | 杭州爱莱达科技有限公司 | Laser radar and its scan method based on two-dimentional DOE elements |
| CN108292053A (en) * | 2015-11-17 | 2018-07-17 | 韩国高等科学技术学院 | Nanocomposite optical radiator with the modulated optical grating construction for arranging antenna suitable for light phase |
| CN108415205A (en) * | 2017-02-09 | 2018-08-17 | 松下知识产权经营株式会社 | Optical scanning device, optical receiving device and optical detection system |
| CN112382920A (en) * | 2020-11-28 | 2021-02-19 | 河南工程学院 | Low-voltage laminated lithium niobate electro-optical Q switch |
| CN117289496A (en) * | 2023-11-21 | 2023-12-26 | 武汉光谷航天三江激光产业技术研究院有限公司 | High-precision laser beam scanning device based on electro-optic crystal and use method |
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2003
- 2003-12-19 CN CNA2003101226219A patent/CN1554978A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100383572C (en) * | 2006-05-08 | 2008-04-23 | 中国科学院上海光学精密机械研究所 | Electric control phase shift space optical bridge |
| CN101178487B (en) * | 2006-11-10 | 2010-12-22 | 精工爱普生株式会社 | Electro optic device, method of manufacturing electro optic device, and scanning type optical apparatus |
| CN100570460C (en) * | 2008-05-21 | 2009-12-16 | 中国科学院上海光学精密机械研究所 | Electro-optical control two-dimensional laser beam scanning array |
| CN101762889B (en) * | 2010-01-19 | 2011-07-06 | 哈尔滨工业大学 | High-accuracy control method based on optical phased array multiple isocandela laser beams |
| CN102866394A (en) * | 2012-10-17 | 2013-01-09 | 上海师范大学 | Laser scanning side lobe suppression device of phased array |
| CN105814451A (en) * | 2013-12-10 | 2016-07-27 | 三菱电机株式会社 | Laser radar device |
| CN108292053A (en) * | 2015-11-17 | 2018-07-17 | 韩国高等科学技术学院 | Nanocomposite optical radiator with the modulated optical grating construction for arranging antenna suitable for light phase |
| CN108415205B (en) * | 2017-02-09 | 2022-11-04 | 松下知识产权经营株式会社 | Optical scanning apparatus, optical receiving apparatus, and optical detection system |
| CN108415205A (en) * | 2017-02-09 | 2018-08-17 | 松下知识产权经营株式会社 | Optical scanning device, optical receiving device and optical detection system |
| CN107807362A (en) * | 2017-11-22 | 2018-03-16 | 杭州爱莱达科技有限公司 | Laser radar and its scan method based on two-dimentional DOE elements |
| CN112382920B (en) * | 2020-11-28 | 2021-07-23 | 河南工程学院 | Low-voltage laminated lithium niobate electro-optical Q switch |
| CN112382920A (en) * | 2020-11-28 | 2021-02-19 | 河南工程学院 | Low-voltage laminated lithium niobate electro-optical Q switch |
| CN117289496A (en) * | 2023-11-21 | 2023-12-26 | 武汉光谷航天三江激光产业技术研究院有限公司 | High-precision laser beam scanning device based on electro-optic crystal and use method |
| CN117289496B (en) * | 2023-11-21 | 2024-02-23 | 武汉光谷航天三江激光产业技术研究院有限公司 | High-precision laser beam scanning device based on electro-optic crystal and use method |
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