CN112382920B - Low-voltage laminated lithium niobate electro-optical Q switch - Google Patents
Low-voltage laminated lithium niobate electro-optical Q switch Download PDFInfo
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- CN112382920B CN112382920B CN202011362391.3A CN202011362391A CN112382920B CN 112382920 B CN112382920 B CN 112382920B CN 202011362391 A CN202011362391 A CN 202011362391A CN 112382920 B CN112382920 B CN 112382920B
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical class [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 239000013078 crystal Substances 0.000 claims abstract description 62
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010033799 Paralysis Diseases 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The invention provides a low-voltage laminated lithium niobate electro-optical Q switch, which is formed by laminating a plurality of rectangular sheet lithium niobate crystals along the thickness direction, wherein the cutting type, the size, the film layer plating and the like of each crystal are completely the same, the thickness direction of the lithium niobate crystals is the direction of an applied electric field, the length direction is the light passing direction, and two crystal faces in the thickness direction of each crystal are plated with electrodes. According to the invention, the plurality of rectangular sheets are overlapped, and a parallel power-up mode is adopted, so that the half-wave voltage can be reduced by multiple times under the condition of ensuring the same light-transmitting aperture, and the practical application is facilitated.
Description
Technical Field
The invention relates to the field of pulse laser Q-switched devices, in particular to a low-voltage laminated lithium niobate electro-optical Q switch.
Background
The Q-switching technique is one of the most common ways to obtain short pulse lasers today, and its emergence is a significant breakthrough in the history of development of high peak power lasers. Compared with other Q-switching technologies, the electro-optical Q-switching technology has the advantages of active controllability, high switching speed, strong turn-off capability, high extinction ratio and the like, stable laser output with high peak power and narrow pulse width is easily obtained, the peak power can reach hundreds of megawatts, the output time can be accurately controlled, and high-precision synchronization can be achieved between the laser and other linkage instruments. Therefore, the electro-optical Q-switch has become one of the most widely used Q-switch at present.
The lithium niobate crystal is one of a few practical electro-optic Q-switched crystals, has the advantages of mature growth technology, lower cost, stable physicochemical property, no deliquescence, larger electro-optic coefficient, easy processing and the like, can meet the requirement of preparing a photoelectric device with larger caliber, is used as a single-axis crystal, does not need two crystals to compensate natural birefringence, can realize electro-optic Q-switching only by a single crystal, has compact and stable device structure, does not need special packaging, is simple and convenient to debug, and can work in a wide temperature range, so the lithium niobate electro-optic Q-switch is widely applied to medium-low power pulse lasers.
But the deficiency is that the half-wave voltage of the prior lithium niobate electro-optical Q switch is higher. Whether conventional or notzCut-off optical Q-switches, or other cut-off types (e.g. cut-off type)
，
) The half-wave voltage of the conventional size switch is higher, and is usually more than 4000V. The higher voltage brings difficulty to power supply preparation on one hand, and brings stronger electromagnetic interference on the other hand, which may cause the whole laser system to fail to work normally or even to be completely paralyzed. It is generally desirable that the lower the half-wave voltage of the Q-switch is, the better, especially in a semiconductor pumped Q-switched laser system, if the half-wave voltage of the Q-switch can be effectively reduced, the whole system can stably operate at a low supply voltage, which is more beneficial to practical application.
Although the lithium niobate electro-optical Q-switch with the configuration adopts a transverse modulation mode, the half-wave voltage can be reduced by increasing the aspect ratio of the crystal, the longer the crystal is, the lower the extinction ratio of the electro-optical Q-switch is, and the length is limited, and the smaller light-passing aperture can not meet the requirements of many practical applications.
Disclosure of Invention
The invention provides a low-voltage laminated lithium niobate electro-optical Q switch, which solves the problems that the existing lithium niobate electro-optical Q switch has high half-wave voltage and cannot give consideration to both low half-wave voltage and large clear aperture.
The technical scheme for realizing the invention is as follows:
a low-voltage laminated lithium niobate electro-optical Q switch is formed by overlapping a plurality of rectangular thin-sheet lithium niobate crystals along the thickness direction, wherein the cut shapes, the sizes, the film layers, and the like of the crystals are completely the same, the thickness direction of the lithium niobate crystals is the direction of an applied electric field, the length direction of the lithium niobate crystals is the direction of light transmission, and two crystal faces in the thickness direction of each crystal are plated with electrodes.
Preferably, the lithium niobate crystals are overlapped together in a mode that two adjacent crystals rotate 180 degrees around the length direction, the width direction and the thickness direction are respectively parallel, the light passing surfaces of the lithium niobate crystals are positioned on the same plane, and the whole light passing surface is polished and plated with a laser antireflection film.
Electrodes are led out from the joints of the lithium niobate crystals, and the positive and negative electrodes are arranged alternately in a parallel power-up mode.
Thickness of the lithium niobate crystaltThe value range is 1 mm-5 mm, and the lengthlThe value range is 5 mm-30 mm, and the widthbThe value range is 5 mm-30 mm.
The rectangular sheet type lithium niobate crystal iszThe cutting can also be other cutting types which can be used for electro-optical Q-switching, such as the cutting type for manufacturing a functional composite lithium niobate electro-optical Q switch:
and the like.
And plating a metal electrode or a transparent electrode in the thickness direction of the rectangular sheet lithium niobate crystal.
The rectangular thin-sheet lithium niobate crystals are fixed together by filling conductive adhesive, dispensing at the joints or using a mechanical fixture.
Preferably, the number of crystal blocks constituting the device is not limited in principle, and 2 to 10 blocks are preferable in view of the requirements of production and application.
The invention has the beneficial effects that:
(1) the half-wave voltage can be greatly reduced. For the electro-optical Q switch with transverse modulation, the half-wave voltage is inversely proportional to the aspect ratio of the crystal, and the half-wave voltage can be reduced by several times by superposing a plurality of rectangular sheets and adopting a parallel power-up mode under the condition of ensuring the same light transmission caliber, thereby being beneficial to practical application.
(2) The invention can overcome the limitation of crystal growth size, is used for preparing the large-caliber lithium niobate electro-optical Q switch and meets the requirement of high-power laser.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a low-voltage laminated lithium niobate electro-optical Q-switch of the present invention.
Fig. 2 shows output light spots of the laminated lithium niobate electro-optically modulated Q-switched laser in embodiment 1 of the present invention.
Fig. 3 shows output light spots of the laminated lithium niobate electro-optically modulated Q-switched laser in embodiment 2 of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
A low-voltage laminated lithium niobate electro-optical Q switch is formed by superposing three rectangular lithium niobate crystal sheets, wherein the size of each crystal sheet is 3mm multiplied by 9mm multiplied by 18.8mm ((R))x×y×z)，zThe axial direction is the light-passing direction,xthe axial direction is the direction of an applied electric field, and the method comprises the following specific steps:
(1) to reduce the axial deviations of the three crystals, the crystals are first cut in an oriented manner to dimensions 9mm by 18.8mm (x×y×z) The blank block of (2), grinding each face directionally, and aligningzRoughly polishing the surface, cutting the crystal into three pieces according to the required size, directionally grinding the cut surfaces, and chamfering edges of each crystal along the length direction by C0.5;
(2) marking the positive and negative directions of each axis of the crystalxSurface polishing and plating Au/Ti electrode, winding according to two adjacent crystalszThree crystals are overlapped together in a mode of rotating the shaft by 180 degrees, so thatzThe surfaces are positioned on the same plane, and glue is dispensed at the seam for fixing;
(3) to the superposedzSurface polishing and plating 1064nm antireflection film with conductive adhesive from top to bottomxElectrodes are led out of the surface and the seams and then fixed by an assembling bracket.
The laminated electro-optical Q-switch is applied to Nd: in the YAG laser, a parallel power-up mode is adopted, and positive and negative electrodes are arranged alternately. In the 1/4 wave voltage-pressurized Q-switched mode, a stable pulse laser output was obtained. When the repetition frequency is 10Hz, the output energy of the single pulse is about 160mJ, the pulse width is about 10ns, the dynamic 1/4 wave voltage is 1200V, and the traditional single-pulse constant-caliber constant-current pulse generator is the traditional single-pulse constant-current pulse generator with the same caliberz1/3 of the lithium niobate electro-optical Q switch is cut, and fig. 2 shows a laser spot at the end of an output mirror after being expanded by a 3-time laser beam expander.
Example 2
A low-voltage laminated lithium niobate electro-optical Q switch is formed by overlapping two rectangular lithium niobate crystal slices, wherein each crystal is cut into a shape of
And the dimensions are 4.5mm multiplied by 9mm multiplied by 18.8mm (thickness)tX widthbX lengthl) The length direction is the light passing direction, the thickness direction is the direction of an electric field, and the method comprises the following specific steps:
(1) in order to reduce the axial deviations of the two crystals, the crystals are first aligned
Cutting into 9mm × 9mm × 18.8mm (thickness)tX widthbX lengthl) The blank block is directionally ground on each surface, two end surfaces in the length direction are roughly polished, then the crystal is cut into two pieces according to the required size, the cut surfaces are directionally ground, and then the edge chamfer angle C of each crystal in the length direction is 0.5;
(2) marking the positive and negative directions of each axis of the crystal, polishing each crystal face in the thickness direction, plating an Au/Ti electrode, overlapping one crystal with the other crystal by rotating 180 degrees around the length direction to enable light-passing surfaces to be in the same plane, and dispensing at a seam for fixing;
(3) and polishing the superposed light-passing surfaces, plating a 1064nm antireflection film, leading out electrodes from the upper surface and the lower surface of the switch and the seam by using conductive adhesive, and fixing by using an assembly bracket.
The laminated electro-optical Q-switch is applied to Nd: in the YAG laser, the thickness or width direction of a switch and the transparent vibration direction of a polarizer in the laser are arranged at an angle of 45 degrees, electrodes on the upper surface and the lower surface of the switch are connected with the anode of a Q-switching power supply, and the electrode at the joint is connected with the cathode of the power supply. Under the condition of not adding 1/4 wave plates or analyzers, 1/4 wave voltage pressurization type electro-optical Q-switching is realized, and stable pulse laser output is obtained. When the repetition frequency is 10Hz, the output energy of a single pulse is about 160mJ, the pulse width is about 10ns, the dynamic 1/4 wave voltage is 1400V, and fig. 3 shows a laser spot at the end of an output mirror after the beam is expanded by a 3-time laser beam expander.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. A low-voltage laminated lithium niobate electro-optical Q switch is characterized in that: is formed by overlapping a plurality of rectangular thin-sheet lithium niobate crystals along the thickness direction;
the thickness direction of the lithium niobate crystal is an electric field adding direction, the length direction is a light passing direction, and two crystal faces in each crystal thickness direction are plated with electrodes;
each lithium niobate crystal is overlapped together in a mode that two adjacent crystals rotate 180 degrees around the length direction, the width direction and the thickness direction are respectively parallel, the light passing surfaces of the lithium niobate crystals are positioned on the same plane, and the whole light passing surface is polished and plated with a laser antireflection film;
electrodes are led out from the joints of the lithium niobate crystals, and the positive and negative electrodes are arranged alternately in a parallel power-up mode.
2. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 1, wherein: the rectangular sheet type lithium niobate crystal iszAnd (6) cutting.
3. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 2, wherein: the rectangular thin-sheet lithium niobate crystal is cut into
Or
。
4. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 3, wherein: thickness of the lithium niobate crystaltThe value range is 1 mm-5 mm, and the lengthlThe value range is 5 mm-30 mm, and the widthbThe value range is 5 mm-30 mm.
5. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 3, wherein: and plating a metal electrode or a transparent electrode in the thickness direction of the rectangular sheet lithium niobate crystal.
6. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 3, wherein: the rectangular thin-sheet lithium niobate crystals are fixed together by filling conductive adhesive, dispensing at the joints or using a mechanical fixture.
7. The low-voltage stacked lithium niobate electro-optical Q-switch of claim 3, wherein: the number of the rectangular thin-sheet lithium niobate crystals is 2-10.
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| CN113471802B (en) * | 2021-07-12 | 2023-01-24 | 河南工程学院 | Low-voltage double-crystal electro-optical Q switch |
| CN113488841B (en) * | 2021-07-12 | 2022-12-09 | 河南工程学院 | Low-voltage independent pressurization type electro-optical Q switch |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1554978A (en) * | 2003-12-19 | 2004-12-15 | 中国科学院上海光学精密机械研究所 | High speed photoelectric phase control array two dimension laser beam scanner |
| CN103135261A (en) * | 2013-03-27 | 2013-06-05 | 上海交通大学 | Electro-optic isolator and manufacturing method thereof |
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| US4682336A (en) * | 1986-05-29 | 1987-07-21 | Hughes Aircraft Company | Q-switched laser resonator of integral construction |
| US8400703B2 (en) * | 2007-06-19 | 2013-03-19 | Nec Corporation | Optical switch |
| CN102593705A (en) * | 2012-03-02 | 2012-07-18 | 长春理工大学 | Method for realizing high repetition frequency electro-optic Q-switching of solid laser based on periodic polar crystal |
| CN103682974A (en) * | 2013-12-16 | 2014-03-26 | 北京工业大学 | Method for generating third-harmonic-generation ultraviolet laser through fold resonating cavity |
| JP6632644B2 (en) * | 2018-01-25 | 2020-01-22 | 大学共同利用機関法人自然科学研究機構 | Method for manufacturing optical element and optical element |
| CN108767650B (en) * | 2018-06-15 | 2020-07-24 | 南开大学 | Function composite electro-optical Q switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1554978A (en) * | 2003-12-19 | 2004-12-15 | 中国科学院上海光学精密机械研究所 | High speed photoelectric phase control array two dimension laser beam scanner |
| CN103135261A (en) * | 2013-03-27 | 2013-06-05 | 上海交通大学 | Electro-optic isolator and manufacturing method thereof |
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Effective date of registration: 20231221 Address after: 450000 No. 12, Dongqing street, high tech Development Zone, Zhengzhou City, Henan Province Patentee after: Zhengzhou Hengrui Environmental Technology Co.,Ltd. Address before: 451191 Xianghe Road, Longhu Town, Zhengzhou City, Henan Province Patentee before: HENAN INSTITUTE OF ENGINEERING |