CN113471802B - Low-voltage double-crystal electro-optical Q switch - Google Patents
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- CN113471802B CN113471802B CN202110783480.3A CN202110783480A CN113471802B CN 113471802 B CN113471802 B CN 113471802B CN 202110783480 A CN202110783480 A CN 202110783480A CN 113471802 B CN113471802 B CN 113471802B
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- 239000013078 crystal Substances 0.000 title claims abstract description 131
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 230000003287 optical effect Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 9
- 239000004568 cement Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000008033 biological extinction Effects 0.000 abstract description 13
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 238000007747 plating Methods 0.000 description 8
- 238000005388 cross polarization Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- GNSKLFRGEWLPPA-ZSJDYOACSA-M potassium;dideuterio phosphate Chemical compound [K+].[2H]OP([O-])(=O)O[2H] GNSKLFRGEWLPPA-ZSJDYOACSA-M 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
Abstract
The invention provides a low-voltage double-block crystal electro-optical Q switch, belonging to the application of crystal materials in the field of photoelectric technology. The invention relates to an electro-optical Q-switch device which is made by two lithium niobate or lithium tantalate crystals according to special design cutting and design crystal axis orientation and is used for electro-optical Q-switching in YAG lasers and other lasers. By optimally designing the switch configuration, the invention solves the defects of high half-wave voltage, low extinction ratio, large influence caused by the temperature difference and length deviation of the two crystals, harsh requirements on processing precision, temperature control precision and crystal quality and the like in the prior art, and the designed double-crystal electro-optical Q switch simultaneously has the advantages of low half-wave voltage, wide temperature range, large allowable range of the temperature difference and length deviation of the two crystals, higher extinction ratio and the like, and is more beneficial to practical application.
Description
Technical Field
The invention relates to the field of laser devices, in particular to a low-voltage double-crystal electro-optical Q-switch.
Background
The electro-optic Q-switching technology is one of the most commonly used modes for obtaining high-peak-power short pulse laser at present, the electro-optic effect of an electro-optic crystal is utilized, a step-type Q-switching voltage is applied to the crystal, the polarization state of the laser after passing through the crystal is periodically changed, the loss in a laser resonant cavity can be periodically modulated by matching with the use of a polarizer, the energy is greatly stored in a laser working substance during the high loss period, when the energy is accumulated to the maximum value, the loss in the cavity is suddenly reduced to the minimum value, laser oscillation is quickly established at the moment, and a large amount of energy is quickly released in a very short time, so that the output of the high-peak-power narrow-pulse-width laser is realized. As an active Q-switching technology, the electro-optical Q-switching has the advantages of high switching rate, strong turn-off capability and the like, the laser output time can be accurately controlled, and high-precision synchronization can be realized between a laser and other linkage instruments, so that the electro-optical Q-switching technology is widely applied, and electro-optical Q-switching devices are widely applied to pulse lasers.
For an electro-optical Q-switch, low half-wave voltage, high extinction ratio, high temperature stability, high light damage resistance threshold, large light transmission aperture, low cost, easy processing and the like are key indexes for evaluating the practicability of the electro-optical Q-switch, but at present, the electro-optical crystal which can completely meet the requirements is very few, and only potassium dideuterium phosphate (KD) is obtained for practical application 2 PO 4 DKDP), lithium niobate (LiNbO) 3 LN), rubidium titanyl phosphate (RbTiOPO) 4 RTP) and each has deficiencies. The DKDP crystal is easy to deliquesce and needs special packaging, the performance of the switch is unstable and even the switch cannot work due to the change of the refractive index of the matching fluid at low temperature, the DKDP electro-optical Q switch adopts a longitudinal modulation mode, the half-wave voltage is high and cannot be adjusted, the annular electrode is complex to prepare, the electric field is not uniform easily, and the dynamic extinction ratio of the switch is low. Although the half-wave voltage of the LN electro-optical Q-switch can be reduced by increasing the aspect ratio, the device caliber is smaller or the length is longer, the extinction ratio of the switch is lower, and the half-wave voltage of the traditional LN Q-switch with the conventional size is higher. The RTP crystal is a crystal newly developed and used in recent years, has the advantages of large electro-optic coefficient, high damage threshold, small piezoelectric coefficient and the like, is a biaxial crystal, needs to be matched for use to compensate natural birefringence, is extremely sensitive to optical quality, processing deviation, temperature deviation and the like of two crystals, is limited by preparation technology, is imported due to the dependence of domestic application at present, and is expensive and easy to limit.
Compared with other crystals, the LN crystal has stable physical and chemical properties, mature growth technology and low growth cost, can meet the requirement of large-caliber photoelectric device preparation, can work in a wide temperature range, and is an electro-optic crystal with good comprehensive properties and high cost performance. Albeit to the traditionzCut LN electro-optical Q-switch, due to the electro-optical coefficient usedγ 22 Smaller (about 3.4 pm/V) results in higher half-wave voltage, but larger other electro-optic coefficients of the LN crystal, e.g.γ 33 About 30.8 pm/V,γ 51 About 28 pm/V, therefore, the half-wave voltage can be further reduced by optimizing the switch configuration and the power-up mode. At the early stage of the process,has been proposed by researchersxOryCut LN electro-optical Q-switches, i.e. using edgeszAxial electric field and edgexOryThe modulation mode of the axial light transmission adopts two crystals to compensate natural birefringence in a matching way, and the effective electro-optic coefficient utilized by the mode is larger, so that the half-wave voltage is greatly reduced. For example, under the condition of the same switch size, the dynamic 1/4 wave voltage is reduced to about 1200V from 3600V in the traditional mode. However, in this method, the light transmission direction and the optical axis are 90 °, the natural birefringence is the largest, the influence of the temperature is the largest, the switching performance is extremely unstable, and the method is very sensitive to the temperature difference between two crystals, the processing deviation, the optical quality of the crystals and the like, so that the method is difficult to be used practically.
Disclosure of Invention
The invention provides a low-voltage double-block crystal electro-optic Q switch, which solves the defects of high half-wave voltage, low extinction ratio, large influence by temperature difference and length deviation of two crystals, harsh requirements on processing precision, temperature control precision, crystal quality and the like in the prior art.
The technical scheme for realizing the invention is as follows:
a low-voltage double-crystal electro-optical Q switch is composed of two same electro-optical crystals combined in a certain pairing direction, each crystal cut at a special angle
。
The electro-optic crystal is a lithium niobate crystal or a lithium tantalate crystal.
The length direction of the crystal is a light passing direction, and two end faces in the light passing direction are polished and plated with laser antireflection films; an electric field is applied in the thickness direction of the crystal, and two crystal faces in the thickness direction are plated with metal films.
The two crystals are fixed by a mechanical clamp or an optical cement according to the thickness/width directions, which are mutually vertical and the length direction orientation is consistent.
The above-mentionedθHas a value range of
。
Besides the above combination mode, two crystals can be placed according to the same orientation, namely the thickness direction, the width direction and the length direction are respectively parallel, then a 1/2 wave plate applying the wavelength is placed between the two crystals, and the long axis and the short axis of the 1/2 wave plate form an angle of 45 degrees with the thickness direction or the width direction of the crystals.
The crystal cut can also be
And
angle of rotationθAlso has a value range of
。
When the crystal is applied to a laser resonant cavity, the light-passing surface is vertical to the propagation direction of laser, the thickness or width direction of the crystal and the transmission direction of the polarizer form an angle of 45 degrees, and the polarities of voltages applied to the two crystals are opposite.
The invention has the beneficial effects that:
(1) The half-wave voltage is greatly reduced. The invention optimizes the modulation mode with the maximum electro-optical effect by analyzing and calculating the electro-optical effect when an electric field is applied along any direction and light is transmitted along any direction, further reasonably designs the optimal crystal cut type, and the half-wave voltage of the designed double-block crystal electro-optical Q switch is greatly reduced. For example, for
The half-wave voltage of the cut double-block crystal LN electro-optical Q switch is traditionalzAbout 25% of cut LN electro-optical Q-switchxCutting oryThe cut LN electro-optical Q-switch is about 30% lower. In addition, the half-wave voltage of the electro-optical Q switch of the invention is larger than the RTP electro-optical Q switch with the same sizeAnd about half as much as it is. Compared with RTP crystal, LN and LT crystal has mature growth technology and lower cost, can meet the requirement of preparing large-caliber devices, and is more beneficial to practical application.
(2) In addition to the half-wave voltage reduction, withxOryCompared with a cut-twin crystal LN electro-optical Q switch, the electro-optical Q switch has the included angle between the light-passing direction and the crystal optical axisθMuch less than 90 deg., and natural birefringence and its temperature effects
The electro-optical Q-switch has smaller natural birefringence, larger tolerance range for length deviation, temperature deviation and the like of two crystals, and is more practical. In addition, what is often used in practice is a rimzAxial growth of crystals, the optical inhomogeneities being predominantly alongzIn the axial direction, analysis shows that the smaller the included angle between the light passing direction and the optical axis is, the smaller the influence of optical nonuniformity on the extinction ratio is, and therefore, the extinction ratio of the electro-optical Q-switch is higher. It can be calculated by theory that, in the case of the same optical inhomogeneity,
the extinction ratio of the cut double-block crystal LN electro-optical Q switch is aboutxOryCut 2.4 times of LN electro-optical Q-switch.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows a monolithic crystal cut of
In whichx、y、zThe axes represent the respective crystal axes of the electro-optic crystal,l、b、trespectively represent the cutting crystalLength, width and thickness directions of the body.
Fig. 2 is a schematic diagram of a structure of a low-voltage two-block crystal electro-optical Q-switch of the present invention, each of which is cut as shown in fig. 1.
FIG. 3 is a schematic diagram of a structure of a low-voltage two-block crystal electro-optical Q-switch of the present invention, each of which is cut as shown in FIG. 1, wherein P is 1 、P 2 Representing the fast and slow axes of the 1/2 wave plate.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
The low-voltage double-crystal electro-optical Q-switch is prepared by LN crystal, and the crystal cut type of the Q-switch is designed as
The size of the monolithic crystal is 9 mm by 10 mm (thickness)tX widthbX lengthl) The method is applied to a laser with the laser wavelength of 1064 nm. Two LN crystals are arranged in accordance with
Cutting, polishing two end faces along the length direction, plating an antireflection film with the thickness of 1064 nm, plating Au/Ti electrodes on two crystal faces along the thickness direction, and applying an electric field along the thickness direction. The two crystals are combined and fixed together by using a mechanical clamp, so that the length directions of the two crystals are parallel to each other, and the thickness (width) directions of the two crystals are vertical to each other. Electrodes are led out of the two crystals to apply Q-switching high voltage, the two crystals adopt a parallel power-up mode, and the polarities of the applied voltages are opposite.
When the Q-switch is applied to a laser, the light-passing surface is vertical to the propagation direction of laser, and the thickness and width directions of the Q-switch form an angle of 45 degrees with the transmission direction of a polarizer in the laser.
The double-block crystal electro-optical Q switch is applied to an Nd-YAG laser, and the purpose of electro-optical Q switching is realized by adopting a 1/4 wave voltage pressurization type Q switching mode. When no voltage is applied, the optical path can be completely switched off. When 1/4 wave Q-switching high voltage is applied, stable pulse laser output is obtained. When the 1/4 wave voltage is 720V and the repetition frequency is 10Hz, the output energy of a single pulse is about 200mJ, and the pulse width is about 7ns. The extinction ratio of the Q-switch was measured by the cross-polarization method to be 120.
Example 2
The low-voltage double-crystal electro-optical Q-switch is prepared by LN crystal, and the crystal cut type of the Q-switch is designed as
Monolithic crystal sizes of 9 mm by 5 mm (thickness)tX widthbX lengthl) The method is applied to a laser with the laser wavelength of 1064 nm. Two LN crystals are arranged in accordance with
Cutting, polishing two end faces along the length direction, plating an antireflection film with the thickness of 1064 nm, plating Au/Ti electrodes on two crystal faces along the thickness direction, and applying an electric field along the thickness direction. The two crystals are respectively arranged on the two adjusting brackets, so that the placement directions of the two crystals are consistent, namely the thickness, the width and the length directions are respectively parallel. A1064 nm half-wave plate is placed between the two crystals, and the long and short axis directions of the half-wave plate are adjusted to form an angle of 45 DEG with the thickness or width direction of the crystal. Electrodes are led out of the two crystals to apply Q-switching high voltage, the two crystals adopt a parallel power-up mode, and the polarities of the applied voltages are opposite.
When the Q-switch is applied to a laser, the light-passing surface is perpendicular to the laser propagation direction, and the thickness and width directions of the Q-switch form an angle of 45 degrees with the transmission direction of a polarizer in the laser.
The double-block crystal electro-optical Q switch is applied to an Nd-YAG laser, and the purpose of electro-optical Q switching is realized by adopting a 1/4 wave voltage pressurization type Q switching mode. When no voltage is applied, the light path can be completely cut off. When 1/4 wave Q-switching high voltage is applied, stable pulse laser output is obtained. When the 1/4 wave voltage is 1400V and the repetition frequency is 10Hz, the single pulse output energy is about 200mJ, and the pulse width is about 7ns. The extinction ratio of the Q-switch was measured by the cross-polarization method to be 200.
Example 3
The low-voltage double-crystal electro-optical Q-switch is prepared by LN crystal, and the crystal cut type of the Q-switch is designed as
The size of the monolithic crystal is 9 mm by 10 mm (thickness)tX width ofbX lengthl) The method is applied to lasers with laser wavelength of 1064 nm. Two LN crystals are arranged in accordance with
Cutting, polishing two end faces along the length direction, plating an antireflection film with the thickness of 1064 nm, plating Au/Ti electrodes on two crystal faces along the thickness direction, and applying an electric field along the thickness direction. The two crystals are combined and fixed together by using a mechanical clamp, so that the length directions of the two crystals are parallel to each other, and the thickness (width) directions of the two crystals are vertical to each other. Electrodes are led out from the two crystals to apply Q-switching high voltage, the two crystals adopt a parallel power-up mode, and the polarities of the applied voltages are opposite.
When the Q-switch is applied to a laser, the light-passing surface is vertical to the propagation direction of laser, and the thickness and width directions of the Q-switch form an angle of 45 degrees with the transmission direction of a polarizer in the laser.
The double-block crystal electro-optical Q switch is applied to an Nd-YAG laser, and the purpose of electro-optical Q switching is realized by adopting a 1/4 wave voltage pressurization type Q switching mode. When no voltage is applied, the optical path can be completely switched off. When 1/4 wave Q-switching high voltage is applied, stable pulse laser output is obtained. When the 1/4 wave voltage is 800V and the repetition frequency is 10Hz, the output energy of a single pulse is about 200mJ, and the pulse width is about 7ns. The extinction ratio of the Q-switch was measured by the cross-polarization method to be 130.
Example 4
The low-voltage double-crystal electro-optical Q-switch is prepared by LN crystal, and the crystal cut type of the Q-switch is designed as
The size of the monolithic crystal is 9 mm by 10 mm (thickness)tX widthbX lengthl) The method is applied to a laser with the laser wavelength of 1064 nm. Two LN crystals are arranged in accordance with
Cutting, polishing two end faces along the length direction, plating an antireflection film with the thickness of 1064 nm, plating Au/Ti electrodes on two crystal faces along the thickness direction, and applying an electric field along the thickness direction. The two crystals are combined and fixed together by using a mechanical clamp, so that the length directions of the two crystals are parallel to each other, and the thickness (width) directions of the two crystals are vertical to each other. Electrodes are led out of the two crystals to apply Q-switching high voltage, the two crystals adopt a parallel power-up mode, and the polarities of the applied voltages are opposite.
When the Q-switch is applied to a laser, the light-passing surface is vertical to the propagation direction of laser, and the thickness and width directions of the Q-switch form an angle of 45 degrees with the transmission direction of a polarizer in the laser.
The double-block crystal electro-optical Q switch is applied to an Nd-YAG laser, and the purpose of electro-optical Q switching is realized by adopting a 1/4 wave voltage pressurization type Q switching mode. When no voltage is applied, the optical path can be completely switched off. When 1/4 wave Q-switching high voltage is applied, stable pulse laser output is obtained. When the 1/4 wave voltage is 1300V and the repetition frequency is 10Hz, the output energy of a single pulse is about 200mJ, and the pulse width is about 7ns. The extinction ratio of the Q-switch was measured by the cross-polarization method to be 150.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A low-voltage double-crystal electro-optical Q-switch is characterized in that: is formed by combining two identical lithium niobate crystals or lithium tantalate crystals according to a certain pairing direction, wherein each crystal is cut and cut at a special angleIs composed of
、
And
wherein x, y and z axes respectively represent crystal axes of the crystal, b and l respectively represent width and length directions of the cut crystal, and anglesθHas a value range of
。
2. The low voltage two-block crystal electro-optic Q-switch of claim 1, wherein: the length direction of the crystal is a light passing direction, and two end faces in the light passing direction are polished and plated with laser antireflection films; an electric field is applied in the thickness direction of the crystal, and two crystal faces in the thickness direction are plated with metal films.
3. The low voltage two-block crystal electro-optical Q-switch of claim 1, wherein: the two crystals are fixed by a mechanical clamp or an optical cement according to the thickness/width directions, which are mutually vertical and the length direction orientation is consistent.
4. The low voltage two-block crystal electro-optic Q-switch of claim 1, wherein: the two crystals are placed according to the same direction, namely the thickness direction, the width direction and the length direction are respectively parallel, then a 1/2 wave plate applying the wavelength is placed between the two crystals, and the long axis and the short axis of the 1/2 wave plate form an angle of 45 degrees with the thickness direction or the width direction of the crystals.
5. Use of a low voltage two-block crystal electro-optical Q-switch according to any of claims 1 to 4 in a laser resonator, wherein: when the laser resonator is applied, the light-passing surface is vertical to the propagation direction of laser, the thickness or width direction of the crystal and the transmission direction of the polarizer form an angle of 45 degrees, and the polarities of voltages applied to the two crystals are opposite.
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