CN107465105B - double-crystal electro-optic Q-switch and preparation method thereof - Google Patents
double-crystal electro-optic Q-switch and preparation method thereof Download PDFInfo
- Publication number
- CN107465105B CN107465105B CN201710640015.8A CN201710640015A CN107465105B CN 107465105 B CN107465105 B CN 107465105B CN 201710640015 A CN201710640015 A CN 201710640015A CN 107465105 B CN107465105 B CN 107465105B
- Authority
- CN
- China
- Prior art keywords
- electro
- crystal
- optical
- switch
- optic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The invention provides a double-crystal electro-optic Q-switch and a preparation method thereof; one of the two-axis crystal electro-optic Q-switch is made of a whole rectangular two-axis crystal electro-optic crystal; the central position of the light-passing direction of the electro-optical Q-switch is provided with a phase compensation wave plate; the two sides of the phase compensation wave plate on the electro-optical Q-switch are both electro-optical crystal elements, and two c-direction surfaces, which extend along the light-passing direction and are parallel to each other, of the electro-optical crystal elements are plated with electrode layers; the length of the phase compensation wave plate in the light transmission direction is odd times of the thickness of the phase compensation wave plate for compensating the phase delay generated by the target laser; the lengths of the two electro-optical crystal elements in the light passing direction are the same; the temperature stability of the Q-switch can be effectively and reliably improved, the insertion loss is low, the operation is simple, the influence on the temperature stability of the Q-switch caused by the static birefringence of the biaxial electro-optic crystal along with the temperature change can be solved, and the intrinsic extinction ratio of the electro-optic Q-switch is ensured.
Description
Technical Field
the invention relates to the technical field of laser equipment, in particular to a double-crystal electro-optic Q-switch and a preparation method thereof.
Background
the electro-optical Q-switch is a switch which utilizes the electro-optical effect of a crystal to change the polarization state of laser passing through the crystal so as to connect or cut off an oscillation light path in a cavity, has the advantages of short switching time, high efficiency, high pulse width, high peak power and the like, is an important device of a solid laser, and is widely applied to the laser technology. The traditional electro-optical Q-switch used in the laser technology at present is mainly made of KD2PO4 and LiNbO3 uniaxial crystal. However, each of these two crystals has some disadvantages. KD2PO4 (KD is called for short) crystal absorbs moisture, need protect with the dampproofing box of complicated structure during the use, and the life-span is shorter, and half-wave transfers Q voltage to reach 6 ~ 7 kilovolts generally and temperature uniformity is not enough, has restricted application range greatly. The laser damage threshold of the LiNbO3 (LN for short) crystal is low, only about 10MW/cm2, and the LiNbO3 crystal cannot be applied to laser with larger power; the crystal also has a strong piezoelectric effect, and can be accompanied with a piezoelectric coupling effect under a high repetition frequency, so that the Q-switching performance is seriously influenced.
In order to overcome the defects of electro-optical Q-switch made of electro-optical crystals such as KD x P, LN, foreign countries such as Israel, England and France begin to adopt RbTiOPO4 (RTP for short) crystal with excellent electro-optical performance in the early 90 s to make the electro-optical Q-switch. The RTP crystal has large electro-optic coefficient, small dielectric constant, no deliquescence and laser damage resistance threshold reaching GW/cm2 magnitude. However, the RTP crystal belongs to a biaxial crystal, a natural birefringence effect exists, strict and harsh constant temperature control is required for the electro-optic Q-switch manufactured by a single crystal, and the RTP crystal is basically not adopted in practical application; another solution is to adopt a dual crystal temperature compensation design: the effect of the static birefringence of the RTP crystal on the polarization plane direction along with the temperature change is eliminated by adopting a combined thermal compensation design of rotating the two electro-optical crystals in the c direction by 90 degrees, as shown in FIG. 1. Although the electro-optical Q-switch with the double-crystal temperature compensation design structure can overcome the instability caused by the natural birefringence of RTP, the electro-optical Q-switch with the double-crystal temperature compensation design structure has the following serious defects: the extinction ratio is greatly reduced. The extinction ratio of an original electro-optical Q-switch manufactured by one RTP crystal can even reach 2000:1, and the extinction ratio of the RTP electro-optical Q-switch designed by double-crystal temperature compensation shown in figure 1 is only about 100: 1-200: 1 generally. Meanwhile, the extinction ratio is reduced, the Q-switching efficiency is seriously influenced, and a large amount of incident light is absorbed by the RTP crystal, so that the temperature of the RTP electro-optical Q-switching switch with the structure is increased, and the instability of the RTP electro-optical Q-switching switch with the structure is greatly increased.
in addition, another method can eliminate the influence of the static birefringence of the RTP crystal on the electro-optical performance of the RTP crystal, as shown in FIG. 2, namely, a phase compensation wave plate is added between two identical RTP crystals. There are many advantages to using crystal, mica, etc. to make phase compensation plate, and these two kinds of crystal are usually selected to make phase compensation plate. However, the crystal properties of crystal materials such as crystal and mica are greatly different from those of RTP, and thus it is difficult to match the crystal properties of RTP crystals, and thus, an RTP crystal electro-optic Q-switch having excellent performance is formed. Because the electro-optical Q-switch with the structure uses two different three crystals, has six light-passing surfaces and requires precise polishing, and six surfaces are required to be parallel as much as possible when the electro-optical Q-switch is applied to a laser experiment, the assembly difficulty of the electro-optical Q-switch is greatly increased, and the insertion loss of a system is increased, so that no report of the application of the electro-optical Q-switch has been found so far.
disclosure of Invention
aiming at the defects in the prior art, the invention provides a double-crystal electro-optic Q-switch and a preparation method thereof; the temperature stability of the Q-switch can be effectively and reliably improved, the insertion loss is low, the operation is simple, the influence on the temperature stability of the Q-switch caused by the static birefringence of the biaxial electro-optic crystal along with the temperature change can be solved, and the intrinsic extinction ratio of the electro-optic Q-switch is ensured.
in order to solve the technical problems, the invention provides the following technical scheme:
In a first aspect, the present invention provides a dual-crystal electro-optic Q-switch, which is made of a single rectangular dual-crystal electro-optic crystal;
the central position of the light-passing direction of the electro-optical Q-switch is provided with a phase compensation wave plate;
The electro-optical Q-switch comprises an electro-optical crystal element, a phase compensation wave plate and a phase compensation wave plate, wherein the electro-optical crystal element is arranged on the two sides of the phase compensation wave plate and extends along the light-passing direction;
the lengths of the two electro-optical crystal elements in the light passing direction are the same.
Further, the biaxial electro-optic crystal includes: RTP crystals, KTP crystals, KN crystals and BNN crystals.
Further, the length of the phase compensation wave plate in the light passing direction is an odd multiple of the thickness of the phase compensation wave plate for compensating the phase delay generated by the target laser.
in a second aspect, the present invention also provides a dual-axis crystal electro-optic Q-switch, comprising: the phase compensation wave plate is arranged between the two electro-optical crystal elements along the light transmission direction, and the c-direction surfaces of the electro-optical crystal elements are plated with electrode layers;
the electro-optical crystal element and the phase compensation wave plate are rectangular biaxial electro-optical crystals of the same type;
The two electro-optical crystal elements and the phase compensation wave plate are bonded into a whole through a thermal bonding technology.
Further, the biaxial electro-optic crystal includes: RTP crystals, KTP crystals, KN crystals and BNN crystals.
in a third aspect, the present invention further provides a preparation method of the biaxial crystal electro-optic Q-switch, where the preparation method includes:
directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
performing precise optical polishing on the light passing surface of the electro-optic crystal obtained by cutting;
Plating electrode layers on two parallel c-direction surfaces extending along the light passing direction of the biaxial electro-optical crystal element;
According to a precise etching method, etching treatment is carried out on part of the electrode layers, corresponding to the phase compensation wave plates, on the two c-direction surfaces plated with the electrode layers;
And plating an antireflection film on the light transmitting surface of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
Further, the length of the etched part of the electrode layer in the light-transmitting direction is an odd multiple of the thickness of the phase compensation wave plate for compensating the phase delay generated by the target laser.
in a fourth aspect, the present invention further provides a preparation method of the biaxial electro-optic Q-switch, where the preparation method includes:
directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
performing precise optical polishing on the light passing surface of the electro-optic crystal obtained by cutting;
a detachable metal lantern ring is arranged on the outer wall of the phase compensation wave plate, and the inner wall of the metal lantern ring is closely attached to the outer wall of the phase compensation wave plate;
plating electrode layers on two parallel c-direction surfaces extending along the light passing direction of the biaxial electro-optical crystal element;
Removing the metal lantern ring;
And plating an antireflection film on the light transmitting surface of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
Further, the length of the metal collar in the light passing direction is an odd multiple of the thickness of a phase compensation wave plate for compensating the phase delay generated by the target laser.
In a fifth aspect, the present invention further provides a preparation method of the biaxial electro-optic Q-switch, where the preparation method includes:
directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
Cutting the center of the biaxial crystal electro-optic crystal horizontally arranged along the light transmission direction to obtain a rectangular first wafer;
Cutting the other two crystals obtained after cutting to obtain two second crystals with the same shape;
respectively carrying out precision optical polishing on light passing surfaces of the two second crystals and the light passing surface of the first wafer;
Plating electrode layers on two c-direction surfaces which extend along the light-transmitting direction of the two second crystals and are parallel to each other to obtain two electro-optical crystal elements plated with the electrode layers;
grinding and polishing the thickness of the first wafer to be odd times of the thickness of a phase compensation wave plate for compensating the phase delay generated by the target laser by using a thickness gauge and an extinction ratio tester to obtain the phase compensation wave plate;
clamping the phase compensation wave plate between the two electro-optical crystal elements, and bonding the two electro-optical crystal elements and the phase compensation wave plate into a whole by applying a thermal bonding technology;
And plating an antireflection film on the light passing of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
According to the technical scheme, the double-axis crystal electro-optic Q-switch and the preparation method thereof are disclosed; one of the two-axis crystal electro-optic Q-switch is made of an integrally formed rectangular two-axis crystal electro-optic crystal; the central position of the light-passing direction of the electro-optical Q-switch is provided with a phase compensation wave plate; the electro-optical Q-switch comprises an electro-optical crystal wave plate, a phase compensation wave plate and a phase compensation switch, wherein the two sides of the phase compensation wave plate of the electro-optical Q-switch are all electro-optical crystal elements, and two c-direction surfaces of the electro-optical crystal wave plate, which extend along the light-transmitting direction and are parallel to each other, are plated with electrode layers; the length of the phase compensation wave plate in the light transmission direction is odd times of the thickness of the phase compensation wave plate for compensating the phase delay generated by the target laser; the lengths of the two electro-optical crystal elements in the light passing direction are the same. The temperature stability of the Q-switch can be effectively and reliably improved, the insertion loss is low, the operation is simple, the influence of static birefringence of the biaxial electro-optic crystal on the temperature stability of the Q-switch along with the temperature change can be solved, and the inherent extinction ratio of the electro-optic Q-switch is ensured.
drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art electro-optical Q-switch formed by two equivalent RTP crystal elements rotated 90 degrees with respect to each other;
FIG. 2 is a schematic diagram of an electro-optical Q-switching switch formed by adding a crystal or mica phase compensation wave plate between two identical RTP electro-optical Q-switching crystal elements;
Fig. 3 is a schematic structural diagram of a specific implementation of a biaxial electro-optic Q-switch according to a first embodiment of the present invention;
Fig. 4 is a schematic structural diagram of another specific implementation of a biaxial electro-optic Q-switch according to a second embodiment of the present invention;
fig. 5 is a schematic flow chart of a method for manufacturing a dual-crystal electro-optic Q-switch according to a third embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a biaxial electro-optic Q-switch of the present invention, which is integrally formed by thermally bonding three discrete electro-optic crystal components;
fig. 7 is a schematic flow chart of a method for manufacturing a biaxial electro-optic Q-switch according to a fourth embodiment of the present invention;
FIG. 8 is a schematic diagram of an integrated dual-axis crystal electro-optic Q-switch according to the present invention;
fig. 9 is a schematic flowchart of a method for manufacturing a dual-crystal electro-optic Q-switch according to a fifth embodiment of the present invention;
FIG. 10 is a schematic diagram of a crystal plate of the same type fixed in the middle of the crystal with a plate of the same thickness and width to compensate for the phase retardation produced by the structure, prior to gold plating of the electrodes.
11-an electro-optic crystal element; 12-a phase compensating wave plate; 21-an electro-optic crystal; 22-a phase compensation wave plate; 3-an electrode layer; 4-side; 5-metal collar.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a specific implementation of a dual-crystal electro-optic Q-switch, and referring to fig. 3, the electro-optic Q-switch specifically includes the following contents:
the electro-optic Q-switch is made of an integrally formed rectangular double-axis crystal electro-optic crystal, and a phase compensation wave plate 12 is arranged at the center of the electro-optic Q-switch in the light-passing direction; the parts of two sides of the phase compensation wave plate 12 of the electro-optical Q-switch are electro-optical crystal elements 11, and two c-direction surfaces of the electro-optical crystal elements 11, which extend along the light-passing direction and are parallel to each other, are plated with electrode layers 3. It can be understood that the electro-optical Q-switch is made of an integrally formed biaxial electro-optical crystal, and the shape of the biaxial electro-optical crystal is a cuboid or a cube, and the electro-optical Q-switch is divided into three regions, including: two electro-optical crystal elements 11 at two ends and a phase compensation wave plate 12 in the middle; from the perspective of stereoscopic view, the two electro-optical crystal elements 11 are respectively two cuboids or cubes with the same shape and horizontally arranged along the light-transmitting direction, and the thickness of the phase compensation wave plate 12 can be set according to the practical application situation and can be smaller than, equal to or larger than the thickness of the electro-optical crystal element 11; in fig. 3, a wafer having a thickness smaller than that of the electro-optical crystal element 11 is taken as an example.
it is understood that, in the initial state of the biaxial electro-optical crystal, the a-axis direction, the b-axis direction, and the c-axis direction of the biaxial electro-optical crystal are indicated, that is, the c-direction and the c-direction plane in the present application are predetermined.
The lengths of the two electro-optical crystal elements 11 in the light-transmitting direction are the same, and both the length of the electro-optical crystal element 11 in the light-transmitting direction and the length of the phase compensation wave plate 12 in the light-transmitting direction can be set according to the practical application situation; the length of the phase compensation wave plate 12 in the light transmission direction is an odd multiple of the thickness of the wave phase compensation wave plate 22 for compensating for the phase retardation generated by the target laser light.
The biaxial electro-optic crystal can be but is not limited to RTP (RbTiOPO4) crystal, KTP (KTiOPO4) crystal, KN (KNbO3) crystal and BNN (Ba2Na2Nb5O15) crystal.
As can be seen from the above description, the embodiments of the present invention provide an integrally formed dual-crystal electro-optic Q-switch, which can effectively and reliably improve the temperature stability of the Q-switch, has low insertion loss and is simple to operate, and can not only solve the problem of the influence of static birefringence of the dual-crystal electro-optic crystal on the temperature stability of the Q-switch due to temperature change, but also ensure the intrinsic extinction ratio of the electro-optic Q-switch.
The second embodiment of the present invention provides a second specific implementation manner of a biaxial electro-optic Q-switch, and referring to fig. 4, the electro-optic Q-switch specifically includes the following contents:
The electro-optic Q-switch comprises: two electro-optical crystal elements 21 with the same shape, and a phase compensation wave plate 22 arranged between the two electro-optical crystal elements 21 along the light passing direction, wherein the c-facing surfaces of the electro-optical crystal elements 21 are plated with electrode layers 3.
The electro-optical crystal element 21 and the phase compensation wave plate 22 are both rectangular biaxial electro-optical crystals of the same type.
The two electro-optical crystal elements 21 and the phase compensation wave plate 22 are bonded into a whole through the thermal bonding technology.
compared with the first embodiment, the electro-optical crystal element 21 and the phase compensation wave plate 22 in the electro-optical Q-switch in the second embodiment are separately arranged before being thermally bonded, and then the two electro-optical crystal elements 21 and the phase compensation wave plate 22 are bonded into a whole through a thermal bonding technology, so that an integrally formed electro-optical Q-switch equivalent to that in the first embodiment is obtained; the electro-optical crystal element 21 corresponds to the electro-optical crystal element region 11, and the phase compensation wave plate 22 corresponds to the phase compensation wave plate 12.
as can be seen from the above description, embodiments of the present invention provide a dual-crystal electro-optical Q-switch, and on the basis of the improvement of the temperature stability of the Q-switch that can be achieved by the structure of the electro-optical Q-switch in the first embodiment, the electro-optical Q-switch in the second embodiment can utilize the existing dual-crystal electro-optical crystal and perform shape cutting and polishing, etc., thereby reducing the requirements for the length and shape of the dual-crystal electro-optical crystal, improving the operability of obtaining the electro-optical Q-switch, and reducing the obtaining cost.
An embodiment of the third invention provides a first specific implementation manner of a method for manufacturing a dual-crystal electro-optic Q-switch in the first embodiment, and referring to fig. 5, the method for manufacturing the dual-crystal electro-optic Q-switch specifically includes the following steps:
Step 101: and directionally cutting the biaxial electro-optical crystal protocrystal according to the electro-optical application direction to obtain the rectangular biaxial electro-optical crystal.
Step 102: the light-passing surface 4 of the electro-optical crystal element 11 is subjected to precision optical polishing.
step 103: two c-facing surfaces extending in the light-transmitting direction and parallel to each other are plated with the electrode layer 3.
Step 104: according to the precise etching method, etching treatment is carried out on the part of the electrode layer 3 corresponding to the phase compensation wave plate 12 on the c-direction surfaces of the two plated electrode layers 3.
Step 105: and plating an antireflection film on the light transmission surface 4 of the electro-optical crystal element 11 to obtain the integrally formed electro-optical Q-switch.
wherein, the length of the etched part of the electrode layer 3 along the light-passing direction is an odd multiple of the thickness of the wave phase compensation wave plate 22 for compensating the phase delay generated by the target laser.
in a specific example, referring to fig. 6, a first embodiment of a method for manufacturing a dual-crystal electro-optic Q-switch according to a first embodiment may include the following:
a bulk integrated electro-optic Q-switch for wavelength λ 0.647 μm was fabricated with a biaxial crystal KNbO3 (KN).
a rectangular 5x6x20mm3 ingot is cut from the KN raw crystal, the sides of the 5mm and 6mm lengths are respectively parallel to the c axis and the b axis of the KN crystal, and the long side of 20mm is parallel to the a axis. The two 5x6mm2 end faces of the crystal block are polished in an optical level, gold film electrode layers are plated on two opposite faces vertical to the c direction, the gold film electrode layers are etched in the middle parts of the two gold film electrode layers by a precise etching method, the removed width d is equal to odd times of the thickness of the crystal wave plate which can compensate the phase delay generated by 0.647 mu m laser in the structure, and then 0.647 mu m antireflection films are plated on two light-transmitting faces. The part without the gold film electrode layer is equivalent to a phase compensation wave plate 22, and is integrated with the two parts coated with the gold film electrode layer into an electro-optical Q-switch for λ ═ 0.647 μm.
As can be seen from the above description, the embodiment of the present invention provides a method for manufacturing an integrally formed dual-crystal electro-optic Q-switch, which has a simple and efficient manufacturing process, can effectively and reliably improve the temperature stability of the Q-switch, has low insertion loss and is simple to operate, and can not only solve the problem of the influence of static birefringence of the dual-crystal electro-optic crystal on the temperature stability of the Q-switch due to temperature change, but also ensure the intrinsic extinction ratio of the electro-optic Q-switch.
an embodiment four of the present invention provides a second specific implementation manner of a method for manufacturing a dual-axis electro-optic Q-switch in the first embodiment, and referring to fig. 7, the method for manufacturing the electro-optic Q-switch specifically includes the following steps:
Step 201: and directionally cutting the biaxial electro-optical crystal protocrystal according to the electro-optical application direction to obtain the rectangular biaxial electro-optical crystal.
step 202: the light-passing surface 4 of the electro-optical crystal element 11 obtained by cutting is subjected to precision optical polishing.
step 203: the outer wall of the phase compensation wave plate 12 is provided with a detachable metal lantern ring 5, and the inner wall of the metal lantern ring 5 is closely attached to the outer wall of the phase compensation wave plate 12.
step 204: two parallel c-direction surfaces extending along the light transmission direction of the biaxial electro-optical crystal element are plated with electrode layers 3.
Step 205: the metal collar 5 is removed.
step 206: and plating an antireflection film on the light transmission surface 4 of the electro-optical crystal element 11 to obtain the integrally formed electro-optical Q-switch.
wherein, the length of the metal lantern ring 5 along the light transmission direction is an odd multiple of the thickness of the wave phase compensation wave plate 22 for compensating the phase delay generated by the target laser.
In a specific example, referring to fig. 8, a second specific implementation of a method for manufacturing an electro-optically Q-switched switch according to the first embodiment may include the following:
An integrated electro-optic Q-switch for integrated molding having a wavelength λ of 1.30 μm was fabricated using a biaxial Ba2Na2Nb5O15 (BNN).
A rectangular 5x6x20mm3 crystal block was cut from a BNN primary crystal, the sides 5mm and 6mm long were parallel to the c-axis and b-axis of the crystal, the two 5x6mm2 end faces of the block were polished optically, and then gold-plated electrode layers were plated on the two opposite faces perpendicular to the c-direction. Before plating the gold film electrode layer, two sheets of aluminum or chromium sheets are fastened to the middle of the electrode surface to be plated, and the width d of the sheet is equal to the odd multiple of the thickness of the crystal wave plate which can compensate the phase delay generated by 1.30 μm laser in the structure. After the gold film is plated, the metal sheet is removed, and the part of the middle part of the crystal block which is not plated with the gold film electrode layer is equivalent to a phase compensation wave plate 22; after plating an antireflection film with the thickness of 1.30 μm on a light-passing surface, the light-passing surface and two parts plated with gold film electrode layers are jointly integrated into an electro-optical Q-switch for laser with the thickness of 1.30 μm.
As can be seen from the above description, the embodiment of the present invention provides a method for manufacturing an integrally formed dual-crystal electro-optic Q-switch, which makes the manufacturing process of the electro-optic Q-switch simpler and more efficient through the arrangement of the metal collar 5.
An embodiment five of the present invention provides a specific implementation of a method for manufacturing a dual-axis electro-optic Q-switch in the corresponding embodiment two, and referring to fig. 9, the method for manufacturing the electro-optic Q-switch specifically includes the following steps:
step 301: and directionally cutting the biaxial electro-optical crystal protocrystal according to the electro-optical application direction to obtain the rectangular biaxial electro-optical crystal.
Step 302: and cutting the center of the biaxial electro-optic crystal horizontally arranged along the light transmission direction to obtain a rectangular first wafer.
Step 303: and cutting the other two crystals obtained after cutting to obtain two second crystals with the same shape.
Step 304: and respectively carrying out precision optical polishing on the light passing surfaces 4 of the two second crystals and the light passing surface 4 of the first wafer.
step 305: two c-planes extending in the light transmission direction of the two second crystals and parallel to each other are plated with an electrode layer 3, thereby obtaining two electro-optical crystal elements 21.
Step 306: and grinding and polishing the thickness of the first wafer to be an odd multiple of the thickness of the wave phase compensation wave plate 22 for compensating the phase delay generated by the target laser by using a thickness gauge and an extinction ratio tester to obtain the wave phase compensation wave plate 22.
Step 307: the wave phase compensation wave plate 22 is clamped between the two electro-optical crystal elements 21, and the two electro-optical crystal elements 21 and the wave phase compensation wave plate 22 are bonded into a whole by applying a thermal bonding technology.
Step 308: and plating an antireflection film on the light transmission surface 4 of the electro-optical crystal element area 11 to obtain the integrally formed electro-optical Q-switch.
in a specific example, referring to fig. 10, a method for manufacturing a dual-crystal electro-optic Q-switch according to a second embodiment may include the following steps:
A bulk electro-optic Q-switch for a laser wavelength λ of 1.064 μm was fabricated using biaxial RTP.
A5 x6x24mm3 rectangular crystal bar is cut along the b direction of the RTP crystal, the sides with the lengths of 5mm and 6mm are respectively along the c axis and the a axis of the RTP crystal, and the long side with the length of 24mm is along the b axis. A wafer with the thickness of 4mm is cut out from the middle part of the crystal bar, and the lengths of the crystal blocks at the two ends in the direction of the crystal block b are enough to process two crystal blocks with the length of 9 mm. Then, the two crystals and the 5x6mm2 plane (total 6 surfaces) of the cut 4mm wafer are polished in an optical level, the lengths of 9mm in the b-axis direction are ensured to be equal as much as possible, and after the b surface is polished, gold film electrode layers are plated on two opposite surfaces, perpendicular to the c direction, of two crystal blocks with the lengths of 9 mm; for the sliced 4mm thick wafer, under the monitoring of a thickness meter and an auxiliary extinction ratio tester, the thickness in the direction b is polished to be an odd number times of the thickness d of a wave plate which can compensate the phase delay generated by 1.064 μm laser in the structure, then the compensation wave plate is clamped between two 9mm crystal blocks (ensuring the crystal orientations of a, b and c of the three crystals are completely consistent) to carry out thermal bonding operation, after the three crystal blocks are bonded into a whole, anti-reflection films of 1.064 μm are plated on two end faces, and therefore the three crystals form a biaxial RTP (RTP) electro-optic Q-modulation switch for carrying out electro-optic Q on 1.064 μm laser.
As can be seen from the above description, the embodiment of the present invention provides a method for manufacturing a dual-crystal electro-optical Q-switch obtained by thermal bonding, the manufacturing process is simple and efficient, the temperature stability of the Q-switch can be effectively and reliably improved, the insertion loss is low, the operation is simple, the influence of static birefringence of the dual-crystal electro-optical crystal on the temperature stability of the Q-switch due to temperature change can be solved, and the intrinsic extinction ratio of the electro-optical Q-switch can be ensured.
The above examples are only for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. a kind of biaxial crystal electro-optic Q-switch, characterized by that, the said electro-optic Q-switch is made of a monoblock rectangular biaxial crystal electro-optic crystal;
The central position of the light-passing direction of the electro-optical Q-switch is provided with a phase compensation wave plate;
The electro-optical Q-switch comprises an electro-optical crystal element, a phase compensation wave plate and a phase compensation wave plate, wherein the electro-optical crystal element is arranged on the two sides of the phase compensation wave plate and extends along the light-passing direction;
the lengths of the two electro-optical crystal elements in the light passing direction are the same.
2. The electro-optic Q-switched switch of claim 1, wherein the biaxial electro-optic crystal is: RTP crystal, KTP crystal, KN crystal or BNN crystal.
3. the electro-optic Q-switched switch of claim 1, wherein the length of the phase compensation waveplate in the pass direction is an odd multiple of the minimum thickness of the crystal waveplate for compensating for the phase retardation produced by the target laser.
4. A dual-crystal electro-optic Q-switch, comprising: the phase compensation wave plate is arranged between the two electro-optical crystal elements along the light transmission direction, and the two c-direction surfaces of the electro-optical crystal elements, which extend along the light transmission direction and are parallel to each other, are plated with electrode layers;
the electro-optical crystal element and the phase compensation wave plate are rectangular biaxial electro-optical crystals of the same type;
the two electro-optical crystal elements and the phase compensation wave plate are bonded into a whole through a thermal bonding technology.
5. the electro-optic Q-switched switch of claim 4, wherein the biaxial electro-optic crystal is: RTP crystal, KTP crystal, KN crystal or BNN crystal.
6. a method for manufacturing a biaxial electro-optic Q-switch as defined in any one of claims 1 to 3, the method comprising:
Directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
performing precise optical polishing on the light passing surface of the electro-optic crystal obtained by cutting;
plating electrode layers on two parallel c-direction surfaces extending along the light passing direction of the biaxial electro-optical crystal element;
According to a precise etching method, etching treatment is carried out on part of the electrode layers, corresponding to the phase compensation wave plates, on the two c-direction surfaces plated with the electrode layers;
And plating an antireflection film on the light transmitting surface of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
7. the method according to claim 6, wherein the length of the etched part of the electrode layer in the light-transmitting direction is an odd multiple of the minimum thickness of the crystal wave plate for compensating the phase retardation generated by the target laser.
8. A method for manufacturing a biaxial electro-optic Q-switch as defined in any one of claims 1 to 3, the method comprising:
Directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
Performing precise optical polishing on the light passing surface of the electro-optic crystal obtained by cutting;
A detachable metal lantern ring is arranged on the outer wall of the phase compensation wave plate, and the inner wall of the metal lantern ring is closely attached to the outer wall of the phase compensation wave plate;
Plating electrode layers on two parallel c-direction surfaces extending along the light passing direction of the biaxial electro-optical crystal element;
Removing the metal lantern ring;
and plating an antireflection film on the light transmitting surface of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
9. The method according to claim 8, wherein the length of the metal collar in the light passing direction is an odd multiple of the minimum thickness of the crystal wave plate for compensating for the phase retardation generated by the target laser.
10. a method of manufacturing the biaxial electro-optic Q-switch as defined in claim 4 or 5, the method comprising:
Directionally cutting the biaxial crystal electro-optical crystal protocrystal according to the electro-optical application direction to obtain a rectangular biaxial crystal electro-optical crystal;
Cutting the center of the biaxial crystal electro-optic crystal horizontally arranged along the light transmission direction to obtain a rectangular first wafer;
cutting the other two crystals obtained after cutting to obtain two second crystals with the same shape;
Respectively carrying out precision optical polishing on light passing surfaces of the two second crystals and the light passing surface of the first wafer;
Plating electrode layers on two c-direction surfaces which extend along the light-transmitting direction of the two second crystals and are parallel to each other to obtain two electro-optical crystal elements plated with the electrode layers;
grinding and polishing the thickness of the first wafer to be an odd multiple of the minimum thickness of a crystal wave plate for compensating the phase delay generated by the target laser by using a thickness gauge and an extinction ratio tester to obtain the phase compensation wave plate;
Clamping the phase compensation wave plate between the two electro-optical crystal elements, and bonding the two electro-optical crystal elements and the phase compensation wave plate into a whole by applying a thermal bonding technology;
and plating an antireflection film on the light transmitting surface of the electro-optical crystal element to obtain the integrally formed electro-optical Q-switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710640015.8A CN107465105B (en) | 2017-07-31 | 2017-07-31 | double-crystal electro-optic Q-switch and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710640015.8A CN107465105B (en) | 2017-07-31 | 2017-07-31 | double-crystal electro-optic Q-switch and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107465105A CN107465105A (en) | 2017-12-12 |
| CN107465105B true CN107465105B (en) | 2019-12-06 |
Family
ID=60547789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710640015.8A Active CN107465105B (en) | 2017-07-31 | 2017-07-31 | double-crystal electro-optic Q-switch and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107465105B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112164972A (en) * | 2020-10-29 | 2021-01-01 | 桂林百锐光电技术有限公司 | Electro-optical Q-switch replacing LN crystal cut by Brewster angle |
| CN112421372B (en) * | 2020-12-30 | 2022-03-18 | 河南工程学院 | Transverse modulation KDP type electro-optical Q switch |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3461402A (en) * | 1963-05-17 | 1969-08-12 | Comp Generale Electricite | Laser deflector having a non-uniform field applied to an electro-optic crystal |
| CN1508575A (en) * | 2002-12-20 | 2004-06-30 | 上海交通大学 | Optical filter for dielectric substance super lattice and manufacturing method thereof |
| CN101762890A (en) * | 2009-12-24 | 2010-06-30 | 广西大学 | Periodicity domain reverse structure electro-optical switch |
| CN102623875A (en) * | 2012-04-11 | 2012-08-01 | 青岛镭视光电科技有限公司 | Novel fusion bonding assembling method of crystal device |
| CN102983490A (en) * | 2012-12-04 | 2013-03-20 | 山东科技大学 | KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
| CN202997296U (en) * | 2012-12-04 | 2013-06-12 | 山东科技大学 | Double KTP frequency-multiplication and electro-optic Q-switching integration device |
-
2017
- 2017-07-31 CN CN201710640015.8A patent/CN107465105B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3461402A (en) * | 1963-05-17 | 1969-08-12 | Comp Generale Electricite | Laser deflector having a non-uniform field applied to an electro-optic crystal |
| CN1508575A (en) * | 2002-12-20 | 2004-06-30 | 上海交通大学 | Optical filter for dielectric substance super lattice and manufacturing method thereof |
| CN101762890A (en) * | 2009-12-24 | 2010-06-30 | 广西大学 | Periodicity domain reverse structure electro-optical switch |
| CN102623875A (en) * | 2012-04-11 | 2012-08-01 | 青岛镭视光电科技有限公司 | Novel fusion bonding assembling method of crystal device |
| CN102983490A (en) * | 2012-12-04 | 2013-03-20 | 山东科技大学 | KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
| CN202997296U (en) * | 2012-12-04 | 2013-06-12 | 山东科技大学 | Double KTP frequency-multiplication and electro-optic Q-switching integration device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107465105A (en) | 2017-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107465105B (en) | double-crystal electro-optic Q-switch and preparation method thereof | |
| EP1198733B1 (en) | Cooling of nonlinear optical devices | |
| US3466565A (en) | Laser mode selection | |
| CN105161961A (en) | Micro-pulse laser radar light source with high pulse energy | |
| GB2300964A (en) | Lasers | |
| US6178040B1 (en) | Laser with two orthogonal zig-zag slab gain media for optical phase distortion compensation | |
| CN108767650B (en) | Function composite electro-optical Q switch | |
| CN101539703B (en) | Frequency multiplier | |
| CN108761622B (en) | Large-size true zero-order optical wave plate with low wavelength sensitivity and preparation method and application thereof | |
| CN104733992A (en) | High-power inner cavity frequency doubling single-frequency laser device | |
| CN101330193A (en) | Single longitudinal mode laser | |
| CN110011177B (en) | Electro-optical radial birefringence Q-switch | |
| CN201476790U (en) | Demodulating mechanism of four-frequency laser gyro | |
| EP0043830B1 (en) | Birefringence coupled high average power laser | |
| CN105932535A (en) | Regeneration amplifier with first pulse self-inhibition function | |
| CN106451054A (en) | Thermal depolarization complete compensation device in multi-pass laser amplifier and use method of device | |
| CN107317217B (en) | Resonance enhanced cavity frequency doubling device based on class II non-critical phase matching | |
| CN102545001B (en) | Regenerative laser amplifier | |
| Cheo et al. | Infrared electrooptic waveguides | |
| CN110932069B (en) | Ultrahigh repetition frequency narrow pulse single-wavelength alternate Q-switched laser output method and laser | |
| CN102244357A (en) | Astigmatism self-compensation solid laser | |
| CN105006737A (en) | Electro-optic and frequency multiplication function composite green laser based on rubidium titanyl phosphate crystals and working method thereof | |
| CN111817124A (en) | Novel assembly of bicrystal RTP pockels box | |
| CN113471802B (en) | Low-voltage double-crystal electro-optical Q switch | |
| CN220603737U (en) | Flat waveguide made of sheet birefringent crystal combination |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201015 Address after: 100018 Beijing Chaoyang District pine Park No. 1 Patentee after: Sinoma intraocular lens Research Institute Co., Ltd Patentee after: BEIJING SINOMA SYNTHETIC CRYSTALS Co.,Ltd. Address before: 100018 Beijing city Chaoyang District dam pine Park No. 1 hospital Patentee before: BEIJING SINOMA SYNTHETIC CRYSTALS Co.,Ltd. |