CN202997296U - Double KTP frequency-multiplication and electro-optic Q-switching integration device - Google Patents
Double KTP frequency-multiplication and electro-optic Q-switching integration device Download PDFInfo
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- CN202997296U CN202997296U CN 201220658086 CN201220658086U CN202997296U CN 202997296 U CN202997296 U CN 202997296U CN 201220658086 CN201220658086 CN 201220658086 CN 201220658086 U CN201220658086 U CN 201220658086U CN 202997296 U CN202997296 U CN 202997296U
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Abstract
The utility model relates to a double KTP frequency-multiplication and electro-optic Q-switching integration device. The device comprises a shell, an electrode and an electro-optical crystal. The electro-optical crystal comprises two KTP crystals which are with low conductivity, are cut in a noncritical temperature phase matching mode, are rotated by 90 degree successively and are successively arranged from left to right. Gold films are coated on upper and lower energization surfaces of a first piece of KTP crystal. The gold films are coated on front and rear energization surfaces of a second piece of KTP crystal. Gold wires are led from the gold film of the upper energization surface of the first piece of KTP crystal and the gold film of the front energization surface of the second piece of KTP crystal and are connected to a positive electrode. The gold wires are led from the gold film of the lower energization surface of the first piece of KTP crystal and the gold film of the rear energization surface of the second piece of KTP crystal and are connected to a negative electrode. When an electro-optic Q switching effect of the device is achieved, a back pressure working mode is used. By using the device of the utility model, two functions of the frequency multiplication and electro-optic Q switching are realized and simultaneously a walk-off angle is eliminated, a static birefringence phase delay is compensated and an influence to a phase matching angle during crystal pressurization is eliminated.
Description
Technical field:
The present invention relates to a kind of electro-optical Q-switch device, be specially a kind of frequency multiplication nonlinear effect and can carry out electric-optically Q-switched device of realizing in laser.
Background technology:
The KTP crystalloid has large effective nonlinear coefficient and good electro-optical properties, therefore utilizes the research of this crystalloid development optical sccond-harmonic generation and electric light multiplexing device to cause the great interest of people.1994, Japanese T. Takunori etc. were with 1 * a 3 * 5mm
3Ktp crystal, to Nd:YVO
4The 1064nm laser of output has been realized frequency multiplication and accent Q simultaneously.When repetition rate 100Hz, modulation obtains the 532nm pulse laser output that pulsewidth is 18ns, peak power is 15.4W (Takunori Taira, Takao Kobayashi. Q-switching and frequency doubling of solid-state laser by a single intracavity KTP crystal [J], IEEE. J. Quantum Eleronies, 1994,30 (3): 800-804).Nineteen ninety-five, they have realized again green glow output (Takunori Taira, the Takao Kobayashi. Intraeavity frequency doubling and Q-switching in diode laser pumped Nd:YVO of peak power 230W
4Laser [J], Applied Optics 1995,34 (21): 4298-4301).1997, matching angle and applied voltage when Yao Jianquan etc. transfer Q to the ktp crystal frequency multiplication have carried out calculating (J. Q. Yao, X. W. Sun, H. S. Kwok. Analysis of simultaneous Q-switching and frequency doubling in KTP [J], Journal of modern optics, 1997,44 (5): 997-1004).2000, Chen Fei etc. adopted 2 * 4 * 10mm
3Ktp crystal, be 1kHz in repetition rate, l/4 voltage 647V during pump power 1W, has realized the TEM of pulsewidth 12ns, peak power 762W
00Mould output, and realized device, whole volume only has half colour film size, and (new type electro is transferred Q inner chamber green (light) laser [J], Chinese engineering science, 2000,2 (4): 39-42) for Chen Fei, Huo Yujing.In above scheme with KTP as frequency multiplication and electro-optical Q-switch device, all used a ktp crystal, according to phase matched angle cutting, adopt the pressurized operation mode when electric-optically Q-switched in laser.But there is static birefringent phase delay in ktp crystal, has influence on electric-optically Q-switched closing effect; And according to the cutting of the phase matched angle under normal temperature, have deviation angle when frequency multiplication, have influence on the beam quality of frequency-doubling conversion efficiency and output light; Adopt the pressurized operation mode, electric-optically Q-switched and frequency multiplication effect occurs at one time, and voltage changes crystal refractive index, thereby has influence on a times yupin effect.
Summary of the invention:
The present invention is directed to the deficiencies in the prior art, provide a kind of without deviation angle and can eliminate two KTP frequencys multiplication and the electric-optically Q-switched integrated device of static birefringent phase delay.
The present invention realizes that the scheme that above purpose is taked is: a kind of pair of KTP frequency multiplication and electric-optically Q-switched integrated device, comprise shell, electrode, electrooptic crystal, electrooptic crystal comprises the ktp crystal of two non-critical temperature phase matched cuttings, from left to right sets gradually second ktp crystal of first ktp crystal and relative first ktp crystal half-twist placement; At the gold-plated film of upper energising face of first ktp crystal, the gold-plated film of lower energising face, the gold-plated film of front energising face of second ktp crystal placing at relative first ktp crystal half-twist, the gold-plated film of rear energising face; Draw gold thread from the gold-plated film of upper energising face of first ktp crystal and the gold-plated film of front energising face of second ktp crystal, be connected to positive electrode; Draw gold thread from the gold-plated film of lower energising face of first ktp crystal and the gold-plated film of rear energising face of second ktp crystal, be connected to negative electrode; Device electro-optical is transferred Q to do the used time employing and is moved back the pressure working method.
As further improvement of the utility model, the ktp crystal of first ktp crystal and relative first ktp crystal half-twist placement is the ktp crystal of low conductivity.
As further improvement of the utility model, first ktp crystal controlled with temperature with the ktp crystal that relative first ktp crystal half-twist placed and realized the multiple frequency phase coupling.
As further improvement of the utility model, the logical light face of the ktp crystal of first ktp crystal and relative first ktp crystal half-twist placement is square.
As further improvement of the utility model, first ktp crystal interior logical light face relative with the ktp crystal that relative first ktp crystal half-twist placed is connected with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 532nm.
As further improvement of the utility model, first ktp crystal placed successively with the ktp crystal that relative first ktp crystal half-twist placed, interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 532nm.
The present invention realizes that above purpose principle is:
The cutting angle of ktp crystal frequency multiplication noncritical phase matching is q=90 °, and j=0 °, in the time of 80 ℃, ktp crystal can be realized the frequency multiplication noncritical phase matching, so the control temperature of crystal should remain on 80 ℃.During the noncritical phase matching cutting, the ktp crystal frequency multiplication is without deviation angle, and therefore, the crystal of this cutting has been eliminated deviation angle.
The phase delay that polarised light produces during by the monolithic ktp crystal is:
In following formula, first Γ s is the phase delay that natural birefringence causes, and be irrelevant with extra electric field; Second Γ
EThe phase delay that is produced by DC Electric Field.
If at identical ktp crystal that has rotated 90 ° of serial connection, the phase delay that produces is during the ktp crystal of polarised light by serial connection after this piece ktp crystal:
At this moment, natural birefringence (n
z-n
x) compensated.Therefore, our designed structure can be good at compensating the natural birefringence of ktp crystal.According to above-mentioned derivation, the phase delay of the ktp crystal of two relative half-twist serial connections is:
V is added voltage in the z-direction, can calculate thus needed half-wave voltage V π.Electric-optically Q-switched working method adopts moves back pressure type, and electric-optically Q-switched like this and frequency multiplication effect separated from the time, can not consider when crystal pressurizes the impact on phase matching angle.In addition, in parallel on series connection, electricity on two ktp crystal optics, produce
The required half-wave voltage of phase delay is 1/2 of monolithic KTP electro-optical Q-switch.
If logical light face length of side d=4mm, logical light length is L, the d/L value not simultaneously, corresponding half-wave voltage is as shown in the table:
The required half-wave voltage of the different aspect ratios of table one
Beneficial effect of the present invention:
As frequency multiplication and electro-optical Q-switch device, a device has been realized frequency multiplication and electric-optically Q-switched two kinds of functions simultaneously with KTP in the present invention, and ktp crystal cuts according to noncritical phase matching, has eliminated deviation angle; The relative half-twists of two ktp crystals are placed, and have eliminated the static phase that static birefringent causes and have postponed, and adopt the impact of moving back when pressing working method to eliminate the crystal pressurization phase matching angle.
Description of drawings:
Fig. 1. the device principle figure that ktp crystal is connected by optical cement
Fig. 2. the device principle figure of logical light face plating anti-reflection film in ktp crystal
The drawing explanation:
(1) first opens ktp crystal;
(2) relative first open second ktp crystal that the ktp crystal half-twist is placed;
(3) first open the gold-plated film of upper energising face of ktp crystal;
(4) first open the gold-plated film of lower energising face of ktp crystal;
The gold-plated film of front energising face of (5) second ktp crystals;
The gold-plated film of rear energising face of (6) second ktp crystals;
(7) positive electrode;
(8) negative electrode.
Embodiment:
The present invention is described in further detail below in conjunction with drawings and Examples.
The ktp crystal 2 of first ktp crystal 1 and relative first ktp crystal half-twist placement is the ktp crystal of low conductivity.
The logical light face of the ktp crystal 2 of first ktp crystal 1 and relative first ktp crystal half-twist placement is square.
The present invention transfers Q and frequency doubling device to be used for laser as laser.The frequency multiplication nonlinear interaction occurs by ktp crystal in 1064nm laser, and outgoing 532nm laser is by the pulse laser of electric-optically Q-switched acquisition high-peak power.Adopt during electric-optically Q-switched work to move back and press working method impact on phase matching angle when eliminating the crystal pressurization.The boundary temperature of crystal is controlled by temperature controlling stove.
Claims (5)
1. two KTP frequencys multiplication and electric-optically Q-switched integrated device, comprise shell, electrode, electrooptic crystal, it is characterized in that:
Electrooptic crystal comprises the ktp crystal of two non-critical temperature phase matched cuttings, from left to right sets gradually the ktp crystal (2) of first ktp crystal (1) and the placement of relative first ktp crystal (1) half-twist;
At the gold-plated film of upper energising face (3) of first ktp crystal (1), the gold-plated film of lower energising face (4), the gold-plated film of front energising face (5) of second ktp crystal (2) of placing at relative first ktp crystal half-twist, the gold-plated film of rear energising face (6); Draw gold thread from the gold-plated film of upper energising face (3) of first ktp crystal (1) and the gold-plated film of front energising face (5) of second ktp crystal (2), be connected to positive electrode (7); Draw gold thread from the gold-plated film of lower energising face (4) of first ktp crystal (1) and the gold-plated film of rear energising face (6) of second ktp crystal (2), be connected to negative electrode (8);
Device electro-optical is transferred Q to do the used time employing and is moved back the pressure working method.
2. a kind of pair of KTP frequency multiplication according to claim 1 and electric-optically Q-switched integrated device is characterized in that:
First ktp crystal (1) is the ktp crystal of low conductivity with the ktp crystal (2) that relative first ktp crystal half-twist placed.
3. a kind of pair of KTP frequency multiplication according to claim 1 and electric-optically Q-switched integrated device is characterized in that:
First ktp crystal (1) is square with the logical light face of the ktp crystal (2) that relative first ktp crystal half-twist placed.
4. a kind of pair of KTP frequency multiplication according to claim 1 and electric-optically Q-switched integrated device is characterized in that:
First ktp crystal (1) interior logical light face relative with the ktp crystal (2) that relative first ktp crystal half-twist placed is connected with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 532nm.
5. a kind of pair of KTP frequency multiplication according to claim 1 and electric-optically Q-switched integrated device is characterized in that:
First ktp crystal (1) placed successively with the ktp crystal (2) that relative first ktp crystal half-twist placed, interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 532nm.
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| CN 201220658086 CN202997296U (en) | 2012-12-04 | 2012-12-04 | Double KTP frequency-multiplication and electro-optic Q-switching integration device |
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| CN 201220658086 CN202997296U (en) | 2012-12-04 | 2012-12-04 | Double KTP frequency-multiplication and electro-optic Q-switching integration device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283105A (en) * | 2014-10-17 | 2015-01-14 | 中国科学院上海光学精密机械研究所 | Method for compensating for phase mismatching caused by temperature variation through harmonic wave conversion device |
| CN105655862A (en) * | 2016-04-20 | 2016-06-08 | 福建福晶科技股份有限公司 | F-P electro-optic Q-switching frequency-doubled laser |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
| CN107946892A (en) * | 2017-12-29 | 2018-04-20 | 中国科学院福建物质结构研究所 | Non-linear laser device and non-linear laser modulator approach |
| CN114441478A (en) * | 2022-04-08 | 2022-05-06 | 南京理工大学 | Crystal birefringence test system based on adjustable broadband laser |
-
2012
- 2012-12-04 CN CN 201220658086 patent/CN202997296U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283105A (en) * | 2014-10-17 | 2015-01-14 | 中国科学院上海光学精密机械研究所 | Method for compensating for phase mismatching caused by temperature variation through harmonic wave conversion device |
| CN104283105B (en) * | 2014-10-17 | 2017-06-06 | 中国科学院上海光学精密机械研究所 | Cause the compensation method of phase mismatch to temperature change for harmonic conversion device |
| CN105655862A (en) * | 2016-04-20 | 2016-06-08 | 福建福晶科技股份有限公司 | F-P electro-optic Q-switching frequency-doubled laser |
| CN105655862B (en) * | 2016-04-20 | 2019-01-11 | 福建福晶科技股份有限公司 | A kind of electric-optically Q-switched double-frequency laser of F-P |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
| CN107465105B (en) * | 2017-07-31 | 2019-12-06 | 北京中材人工晶体研究院有限公司 | double-crystal electro-optic Q-switch and preparation method thereof |
| CN107946892A (en) * | 2017-12-29 | 2018-04-20 | 中国科学院福建物质结构研究所 | Non-linear laser device and non-linear laser modulator approach |
| CN107946892B (en) * | 2017-12-29 | 2019-09-20 | 中国科学院福建物质结构研究所 | Non-linear laser device and non-linear laser modulator approach |
| CN114441478A (en) * | 2022-04-08 | 2022-05-06 | 南京理工大学 | Crystal birefringence test system based on adjustable broadband laser |
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Granted publication date: 20130612 Termination date: 20181204 |
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