CN202997297U - Double KTP crystal light parameter and electro-optic Q switching multiplexing device - Google Patents
Double KTP crystal light parameter and electro-optic Q switching multiplexing device Download PDFInfo
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- CN202997297U CN202997297U CN 201220658089 CN201220658089U CN202997297U CN 202997297 U CN202997297 U CN 202997297U CN 201220658089 CN201220658089 CN 201220658089 CN 201220658089 U CN201220658089 U CN 201220658089U CN 202997297 U CN202997297 U CN 202997297U
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Abstract
The utility model relates to a double KTP crystal light parameter and electro-optic Q switching multiplexing device. The device comprises a shell, an electrode and an electro-optical crystal. The electro-optical crystal comprises two KTP crystals which are with low conductivity, are cut in a noncritical temperature phase matching mode, are rotated by 90 degree successively and are successively arranged from left to right. Gold films are coated on upper and lower energization surfaces of a first piece of KTP crystal. The gold films are coated on front and rear energization surfaces of a second piece of KTP crystal. Gold wires are led from the gold film of the upper energization surface of the first piece of KTP crystal and the gold film of the front energization surface of the second piece of KTP crystal and are connected to a positive electrode. The gold wires are led from the gold film of the lower energization surface of the first piece of KTP crystal and the gold film of the rear energization surface of the second piece of KTP crystal and are connected to a negative electrode. When an electro-optic Q switching effect of the device is achieved, a back pressure working mode is used. By using the device of the utility model, two functions of the light parameter and electro-optic Q switching are realized and simultaneously a walk-off angle is eliminated, a static birefringence phase delay is compensated and an influence to a phase matching angle during crystal pressurization is eliminated.
Description
Technical field:
The present invention relates to a kind of electro-optical Q-switch device, be specially and a kind ofly can carry out electric-optically Q-switched in laser and realize the device of parameter nonlinear effect.
Background technology:
The KTP crystalloid has large effective nonlinear coefficient and good electro-optical properties, and therefore utilizing the research of this crystalloid development optical nonlinear effect and electric-optically Q-switched multiplexing device is a research highly significant.1994, Japanese T. Takunori etc. were with 1 * a 3 * 5mm
3Ktp crystal, the 1064nm laser of Nd:YVO4 output has been realized simultaneously frequency multiplication and has been transferred Q.When repetition rate 100Hz, modulation obtains the 532nm pulse laser output that pulsewidth is 18ns, peak power is 15.4W (Takunori Taira, Takao Kobayashi. Q-switching and frequency doubling of solid-state laser by a single intracavity KTP crystal [J], IEEE. J. Quantum Eleronies, 1994,30 (3): 800-804).Nineteen ninety-five, they have realized again green glow output (the Takunori Taira of peak power 230W, Takao Kobayashi. Intraeavity frequency doubling and Q-switching in diode laser pumped Nd:YVO4 laser [J], APPlied Optics 1995,34 (21): 4298-4301).1997, matching angle and applied voltage when Yao Jianquan etc. transfer Q to the ktp crystal frequency multiplication have carried out calculating (J.Q.Yao, X. W. Sun, H. S. Kwok. Analysis of simultaneous Q-switching and frequency doubling in KTP [J], Journal of modern optics, 1997,44 (5): 997-1004).2000, Chen Fei etc. adopted 2 * 4 * 10mm
3Ktp crystal, be 1kHz in repetition rate, l/4 voltage 647V during pump power 1W, has realized the TEM of pulsewidth 12ns, peak power 762W
00Mould output, and realized device, whole volume only has half colour film size, and (new type electro is transferred Q inner chamber green (light) laser [J], Chinese engineering science, 2000,2 (4): 39-42) for Chen Fei, Huo Yujing.Ktp crystal is used for optical parametric oscillation and electric-optically Q-switched research seldom simultaneously, and Zhang Peng, Zhang Yuping etc. are used for simultaneously optical parametric oscillation and have electric-optically Q-switchedly carried out theoretical calculating ktp crystal, calculate, for 5 ' a 5 ' 20mm
3Ktp crystal, if obtain the parameteric light of 1.57mm, the phase matching angle of KTP should be q=90 °, j=26.8 °, the half-wave voltage that applies at crystal z axle should be 887V.In above scheme with KTP as non-linear and electro-optical Q-switch device, all used a ktp crystal, and cut according to the phase matched angle.But because there is static birefringent phase delay in ktp crystal, use the design of a KTP to have influence on electric-optically Q-switched closing effect; And have deviation angle at parameter as the used time according to the ktp crystal of the cutting of the phase matched angle under normal temperature, have influence on the efficient of parameter conversion.
Summary of the invention:
The present invention is directed to the deficiencies in the prior art, provide a kind of nothing to walk from and can eliminate optical parameter and the electric-optically Q-switched multiplexing device of static birefringent phase delay.
The present invention realizes that the scheme that above purpose is taked is: a kind of pair of ktp crystal optical parameter and electric-optically Q-switched multiplexing device, comprise shell, electrode, electrooptic crystal, electrooptic crystal comprises the ktp crystal of two non-critical temperature phase matched cuttings, from left to right sets gradually second ktp crystal of first ktp crystal and relative first ktp crystal half-twist placement; Two ktp crystals are all controlled by temperature and are realized the parameter phase matched; At the gold-plated film of upper energising face of first ktp crystal, the gold-plated film of lower energising face, the gold-plated film of front energising face of second ktp crystal placing at relative first ktp crystal half-twist, the gold-plated film of rear energising face; Draw gold thread from the gold-plated film of upper energising face of first ktp crystal and the gold-plated film of front energising face of second ktp crystal, be connected to positive electrode; Draw gold thread from the gold-plated film of lower energising face of first ktp crystal and the gold-plated film of rear energising face of second ktp crystal, be connected to negative electrode;
Electric-optically Q-switchedly do the used time and adopt and to move back the pressure working method.
As further improvement of the utility model, second ktp crystal that ktp crystal is low conductivity of first ktp crystal and relative first ktp crystal half-twist placement.
As further improvement of the utility model, the logical light face of second ktp crystal of first ktp crystal and relative first ktp crystal half-twist placement is square.
As further improvement of the utility model, first ktp crystal interior logical light face relative with second ktp crystal that relative first ktp crystal half-twist placed is connected with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 1570nm.
As further improvement of the utility model, first ktp crystal placed successively with second ktp crystal that relative first ktp crystal half-twist placed, interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 1570nm.
The present invention realizes that above purpose principle is:
The cutting angle of ktp crystal parameter noncritical phase matching is q=90 °, j=0 °, this moment ktp crystal parameter nonlinear interaction without walk from, therefore, the crystal of this cutting has been eliminated deviation angle.
The phase delay that polarised light produces during by the monolithic ktp crystal is:
In following formula, first Γ s is the phase delay that natural birefringence causes, and be irrelevant with extra electric field; Second Γ E is the phase delay that is produced by DC Electric Field.
If at identical ktp crystal that has rotated 90 ° of serial connection, the phase delay that produces is during the ktp crystal of polarised light by serial connection after this piece ktp crystal:
At this moment, natural birefringence (n
z-n
x) compensated.Therefore, this designed structure can be good at compensating the natural birefringence of ktp crystal.According to above-mentioned derivation, the phase delay of two ktp crystals that are connected in series after half-twist is:
V is added voltage in the z-direction, can calculate thus needed half-wave voltage V π.
Electric-optically Q-switched working method adopts moves back pressure type, and electric-optically Q-switched like this and optical parameter effect separated from the time, can not consider when crystal pressurizes the impact on phase matching angle.
In parallel on series connection, electricity on two ktp crystal optics, produce
The required half-wave voltage of phase delay is 1/2 of monolithic KTP electro-optical Q-switch.
If logical light face length of side d=4mm, logical light length is L, the d/L value not simultaneously, corresponding half-wave voltage is as shown in the table:
The required half-wave voltage of the different aspect ratios of table one
Beneficial effect of the present invention:
As parameter and electro-optical Q-switch device, a device has been realized parameter and electric-optically Q-switched two kinds of functions simultaneously with KTP in the present invention, and ktp crystal cuts according to noncritical phase matching, when the parameter nonlinear interaction occurs without deviation angle; Use two relative half-twists of ktp crystal to place, eliminated static birefringent phase delay; Move back the electric-optically Q-switched working method of pressure type the electric-optically Q-switched of device separated from the time with the optical parameter effect, having eliminated pressurization is that voltage causes variations in refractive index and has influence on phase matching angle.
Description of drawings:
Fig. 1. the device principle schematic diagram that the logical light face of two crystal is connected by optical cement
Fig. 2. the device principle schematic diagram of logical light face plating anti-reflection film in two crystal
The drawing explanation:
(1) first ktp crystal;
(2) second ktp crystal of relative first ktp crystal half-twist placement;
The gold-plated film of upper energising face of (3) first ktp crystals;
The gold-plated film of lower energising face of (4) first ktp crystals;
The gold-plated film of front energising face of (5) second ktp crystals;
The gold-plated film of rear energising face of (6) second ktp crystals;
(7) positive electrode;
(8) negative electrode.
Embodiment:
The present invention is described in further detail below in conjunction with drawings and Examples.
The ktp crystal 1 interior logical light face relative with the ktp crystal 2 that relative first ktp crystal 1 half-twist is placed is connected with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 1570nm.
The present invention transfers Q and parametric oscillation device to be used for laser as laser.The parameter nonlinear interaction occurs by ktp crystal in 1064nm laser, and emission 1570nm laser is by the pulse laser of electric-optically Q-switched acquisition high-peak power.Adopt during electric-optically Q-switched work and move back pressure type impact on phase matching angle when eliminating the crystal pressurization.The boundary temperature of crystal is controlled by temperature controlling stove.
Claims (5)
1. two ktp crystal optical parameters and electric-optically Q-switched multiplexing device, comprise shell, electrode, electrooptic crystal, it is characterized in that:
Electrooptic crystal comprises two with the ktp crystal of non-critical temperature phase matched cutting, from left to right sets gradually second ktp crystal (2) of first ktp crystal (1) and the placement of relative first ktp crystal (1) half-twist; Two ktp crystals are all controlled by temperature and are realized the parameter phase matched;
The gold-plated film of upper energising face (3) at first ktp crystal (1), the gold-plated film of lower energising face (4), the gold-plated film of front energising face (5) of second ktp crystal (2) of placing at relative first ktp crystal (1) half-twist, the gold-plated film of rear energising face (6); Draw gold thread from the upper gold-plated film of energising face (3) of first ktp crystal (1) and the gold-plated film of the front energising face of second ktp crystal (2) (5), be connected to positive electrode (7); Draw gold thread from the gold-plated film of lower energising face (4) of first ktp crystal (1) and the gold-plated film of rear energising face (6) of second ktp crystal (2), be connected to negative electrode (8);
Electric-optically Q-switchedly do the used time and adopt and to move back the pressure working method.
2. a kind of pair of ktp crystal optical parameter according to claim 1 and electric-optically Q-switched multiplexing device is characterized in that:
First ktp crystal (1) is the ktp crystal of low conductivity with second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed.
3. a kind of pair of ktp crystal optical parameter according to claim 1 and electric-optically Q-switched multiplexing device is characterized in that:
First ktp crystal (1) is square with the logical light face of second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed.
4. a kind of pair of ktp crystal optical parameter according to claim 1 and electric-optically Q-switched multiplexing device is characterized in that:
The relative interior logical light face of second ktp crystal (2) that first ktp crystal (1) and relative first ktp crystal (1) half-twist are placed is connected with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 1570nm.
5. a kind of pair of ktp crystal optical parameter according to claim 1 and electric-optically Q-switched multiplexing device is characterized in that:
First ktp crystal (1) placed successively with second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed, interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 1570nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220658089 CN202997297U (en) | 2012-12-04 | 2012-12-04 | Double KTP crystal light parameter and electro-optic Q switching multiplexing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220658089 CN202997297U (en) | 2012-12-04 | 2012-12-04 | Double KTP crystal light parameter and electro-optic Q switching multiplexing device |
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| CN202997297U true CN202997297U (en) | 2013-06-12 |
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| CN 201220658089 Expired - Fee Related CN202997297U (en) | 2012-12-04 | 2012-12-04 | Double KTP crystal light parameter and electro-optic Q switching multiplexing device |
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- 2012-12-04 CN CN 201220658089 patent/CN202997297U/en not_active Expired - Fee Related
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130612 Termination date: 20181204 |
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| CF01 | Termination of patent right due to non-payment of annual fee |