CN101762890A - Periodicity domain reverse structure electro-optical switch - Google Patents
Periodicity domain reverse structure electro-optical switch Download PDFInfo
- Publication number
- CN101762890A CN101762890A CN200910114662A CN200910114662A CN101762890A CN 101762890 A CN101762890 A CN 101762890A CN 200910114662 A CN200910114662 A CN 200910114662A CN 200910114662 A CN200910114662 A CN 200910114662A CN 101762890 A CN101762890 A CN 101762890A
- Authority
- CN
- China
- Prior art keywords
- optical switch
- electro
- crystal
- domain
- periodicity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a periodicity domain reverse structure electro-optical switch which is composed of a monoblock periodicity domain reverse structure crystal and a control electrode. The birefringent optical crystal with a reverse domain structure has the characteristic that after an electric field is applied, the induced refractive index change nature is reverse, so that the electro-optical switch is realized. When the electric field is not applied, the electro-optical switch is in a conducting state, and when the electric field is applied, the electro-optical switch is in a non-conducting state. The invention realizes the electro- optical switch on the basis of the new principle, and has the advantages of quick response, simple structure, easy realization and convenient use. The electro-optical switch can be used as an electro-optical shutter and an all-optical switch.
Description
Technical field
The present invention relates to the photoswitch field, specifically is a kind of periodicity domain reverse structure electro-optical switch.
Background technology
Photoswitch is widely used in fields such as information optics, photometry calculation and All-Optical Communication Network, is one of important optical component, and it is many that photoswitch has, and is broadly divided into following several big class: mechanical optical switch, thermo-optical switch, acoustooptic switch and electrooptical switching.It is big that the traditional mechanical photoswitch has a volume, switching time is longer, problems such as existence rebound shake and repeatability are relatively poor, thereafter Fa Zhan MEMS (micro-electro-mechanical-systems) is integrated by semiconductor material and micromechanics, though solved the major defect of traditional mechanical photoswitch, but the switch complexity increases, and manufacture craft requires high.Thermo-optical switch needs doing waveguiding structure on glass or the silicon chip earlier, evaporation metal thin film heater in waveguide again, cause the refractive index of the waveguide below it to change by the metallic film heating power and realize the switch motion of light, usually need carry out temperature control, technology and structure are all complicated.Miniature acoustooptic switch needs the multicomponent of relative complex integrated equally.The duty of existing electrooptical switching is based on the control of polarization state is realized, therefore need add the polarizer and analyzer just can carry out switch work, and structure is also remarkable, the invention provides the distinct electrooptical switching simple in structure of a kind of principle.
Summary of the invention
The present invention provides a kind of periodicity domain reverse structure electro-optical switch in order to overcome the deficiencies in the prior art.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
A kind of periodicity domain reverse structure electro-optical switch, it is made of single periodical domain inversion structures crystal 1 and control electrode 2,3.
Above-mentioned single periodical domain inversion structures crystal 1 has periodically variable domain reversal structure.
Above-mentioned single periodical domain inversion structures crystal 1 is rectangular parallelepiped or cube structure, and parallel incident ray direction is an optical axis of crystal direction.
Above-mentioned single periodical domain inversion structures crystal 1 is the single shaft electro-optic crystal.
Above-mentioned control electrode is added on two surfaces of the vertical light incident direction of domain inversion structures crystal 1 periodically.
The present invention's advantage compared with the prior art is: the incompatible characteristic of its induction variations in refractive index realizes the switch motion of light behind the birefringence optics crystal added electric field of the opposite domain structure of periodicity domain reverse structure electro-optical switch utilization of the present invention, new electrooptical switching device principle has been proposed, it is fast to have response speed, simple in structure, be easy to realize and advantage easy to use.Can be used as electrooptical shutter and all-optical switch uses.
Description of drawings
Fig. 1 is a periodicity domain reverse structure electro-optical switch structural representation of the present invention.
Fig. 2 is a periodically domain inversion structures synoptic diagram of monolithic crystal of the present invention.
Among the figure: single periodical domain inversion structures crystal 1, control electrode 2,3.
Embodiment
Further describe the present invention below in conjunction with drawings and Examples, but should not limit protection scope of the present invention with this.
Periodicity domain reverse structure electro-optical switch structure of the present invention as shown in Figure 1, comprise and have periodically the monolithic single axial birefringence electro-optic crystal 1 and the control electrode 2,3 of domain inversion structures, a is an incident beam among the figure, by control electrode 2,3 at vertical light incident direction added electric field.Single axial birefringence electro-optic crystal 1 has periodicity domain inversion structures as shown in Figure 2, and "+" among the figure, "-" number are illustrated in the electricdomain direction on the optical axis of crystal z direction, and x, y represent two other axle of the vertical optical axis of crystal respectively.Not during added electric field, birefringence does not take place in light beam when optical axis z direction is transmitted, part phase change by different domain structures is identical, the direct transmission of light beam is passed through, after adding electric field along the y direction for crystal flat board 1, because electrooptical effect, the uniaxial crystal of this moment has become biaxial crystal, produce the induced birefringence phenomenon, the variations in refractive index of ordinary light o light and non-ordinary light e light is opposite during the crystal of light beam by opposite domain structure, thereby the variation of its phase place of light of identical polarized component is also just opposite.If for the domain structure crystal of "+z " direction, the variations in refractive index of o light and e light is:
In the formula: n
oBe the principal refractive index of ordinary light, γ
22Be the electrooptical coefficient of crystal, E
yElectric field intensity for applied field.
So, for the domain structure crystal of " z " direction, the variations in refractive index of o light and e light is:
Therefore, the phase change of the light of identical polarized component in opposite domain structure crystal is different, and its phase differential is:
In the formula: λ is a wavelength, and 1 geometrical length that passes through in crystal for light, d are the thickness of crystal along the y direction, V
yBe institute's making alive.Like this, when applied field makes that δ is π, light by crystal after the interference of light of identical polarized component disappear mutually, making output intensity is 0, realizes blocking of light.
In the present embodiment, selecting crystalline material is lithium acid niobate crystal, by structure shown in Figure 2, earlier crystal-cut is become rectangular structure, make the periodic domain inversion structures that width is 20 μ m by the extra electric field preparation method at crystal upper edge z axle, plate electrode at two y faces then, can be along y direction added electric field, when the incident beam diameter is 1mm, when using wavelength 0.63 μ m, the design crystalline size is: length * wide * height=4mm * 6mm * 4mm calculates according to formula (5) that to make phase differential be that institute's making alive of π is about 2830V.Like this, when making alive not, be conducting state, when adding the voltage of 2830V for closing off-state, by the switch of control institute alive switch realization light.
Claims (5)
1. a periodicity domain reverse structure electro-optical switch is characterized in that, it is made of single periodical domain inversion structures crystal (1) and control electrode (2), (3).
2. periodicity domain reverse structure electro-optical switch according to claim 1 is characterized in that, described single periodical domain inversion structures crystal (1) has periodically variable domain reversal structure.
3. periodicity domain reverse structure electro-optical switch according to claim 1 is characterized in that, described single periodical domain inversion structures crystal (1) is rectangular parallelepiped or cube structure, and parallel incident ray direction is an optical axis of crystal direction.
4. periodicity domain reverse structure electro-optical switch according to claim 1 is characterized in that, described single periodical domain inversion structures crystal (1) is the single shaft electro-optic crystal.
5. periodicity domain reverse structure electro-optical switch according to claim 1 is characterized in that described control electrode is added on two surfaces of the vertical light incident direction of domain inversion structures crystal (1) periodically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910114662A CN101762890A (en) | 2009-12-24 | 2009-12-24 | Periodicity domain reverse structure electro-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910114662A CN101762890A (en) | 2009-12-24 | 2009-12-24 | Periodicity domain reverse structure electro-optical switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101762890A true CN101762890A (en) | 2010-06-30 |
Family
ID=42494165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910114662A Pending CN101762890A (en) | 2009-12-24 | 2009-12-24 | Periodicity domain reverse structure electro-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101762890A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892104A (en) * | 2014-12-02 | 2016-08-24 | 广西大学 | Electro-optical modulation optical branching coupler |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
| CN114637154A (en) * | 2022-02-28 | 2022-06-17 | 西安交通大学 | Cascade periodic polarization electro-optic crystal structure for optical phased array |
-
2009
- 2009-12-24 CN CN200910114662A patent/CN101762890A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892104A (en) * | 2014-12-02 | 2016-08-24 | 广西大学 | Electro-optical modulation optical branching coupler |
| CN105892104B (en) * | 2014-12-02 | 2018-07-17 | 广西大学 | A kind of Electro-optical Modulation optical branching coupler |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
| CN107465105B (en) * | 2017-07-31 | 2019-12-06 | 北京中材人工晶体研究院有限公司 | double-crystal electro-optic Q-switch and preparation method thereof |
| CN114637154A (en) * | 2022-02-28 | 2022-06-17 | 西安交通大学 | Cascade periodic polarization electro-optic crystal structure for optical phased array |
| CN114637154B (en) * | 2022-02-28 | 2023-12-22 | 西安交通大学 | Cascaded periodically polarized electro-optic crystal structure for optical phased array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Xiong et al. | Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices | |
| WO1988006303A1 (en) | Polarisation controller | |
| Liu et al. | Temperature control of terahertz metamaterials with liquid crystals | |
| JPH04110831A (en) | Optical control device | |
| Shenoy et al. | An electrically controlled nematic liquid crystal core waveguide with a low switching threshold | |
| CN104880887A (en) | Method for manufacturing near-stoichiometry PPLN all-optical wavelength converter low in Mg doping | |
| WO2015124175A1 (en) | Polarization independent electro-optically induced waveguide | |
| Qiao et al. | Optical characteristics of transparent PMNT ceramic and its application at high speed electro-optic switch | |
| CN101762890A (en) | Periodicity domain reverse structure electro-optical switch | |
| Dong et al. | Study on the structure dependent ultrafast third-order optical nonlinearity of GeS2–In2S3 chalcogenide glasses | |
| Tian et al. | Continuous control of polarization state and tunable dual-channel optical communication based on highly transparent PMN-PT electro-optic ceramics | |
| JP2015014715A (en) | Electro-optic device | |
| Zhang et al. | Defect modes tuning of one-dimensional photonic crystals with lithium niobate and silver material defect | |
| Li et al. | Nanosecond switching of micrometer optical retardance by an electrically controlled nematic liquid crystal cell | |
| Gong et al. | Electric-field-controlled optical switch using Kerr effect and gradient of the composition ratio Nb/(Ta+ Nb) | |
| Zhou et al. | A graphene-based all-fiber electro-absorption modulator | |
| Liu et al. | Thermo-optic properties of epitaxial Sr 0.6 Ba 0.4 Nb 2 O 6 waveguides and their application as optical modulator | |
| US4085576A (en) | Monocrystalline display device with storage effect for an electronic timepiece | |
| Neranjith et al. | MZI-based all-optical serial-to-parallel conversion circuit by free-carrier dispersion effect | |
| Zhang et al. | Temperature sensor and switch based on one-dimensional photonic crystal with a Kerr nonlinear defect layer | |
| Gong et al. | Electric-field-controlled optical beam splitter using the Kerr effect and the Nb/(Ta+ Nb) composition ratio gradient | |
| Simoni et al. | Nonlinear optical behavior of hybrid aligned nematic liquid crystals | |
| Lu et al. | Proposal to produce coupled resonator-induced transparency and bistability using microresonator enhanced Mach–Zehnder interferometer | |
| Zhang et al. | Electro-optical switch using Ge2Sb2Te5 phase-change material in a silicon MZI structure | |
| Kumari et al. | Efficient Phase Tuning of Silicon Photonic Devices Using Alignment Assisted Liquid Crystal Tuners |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20100630 |