CN102983490A - KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence - Google Patents
KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence Download PDFInfo
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- CN102983490A CN102983490A CN2012105113596A CN201210511359A CN102983490A CN 102983490 A CN102983490 A CN 102983490A CN 2012105113596 A CN2012105113596 A CN 2012105113596A CN 201210511359 A CN201210511359 A CN 201210511359A CN 102983490 A CN102983490 A CN 102983490A
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Abstract
The invention relates to a KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence. The KTP Q-switching and parameter dual-function device capable of compensating the walk-off and the static birefringence comprises a shell, electrodes and an electrooptical crystal, wherein the electrooptical crystal comprises four KTP crystals which are sequentially arranged from the left side to the right side, have low conductivity, are cut according to an II parameter critical phase matching angle and are arranged by sequentially rotating for 90 degrees; upper and lower electrifying surfaces of a first KTP crystal and a third KTP crystal are plated with gold films; front and back electrifying surfaces of a second KTP crystal and a fourth KTP crystal are plated with gold films; gold wires are led out from the upper electrifying surface of the first crystal, the front electrifying surface of the second crystal, the lower electrifying surface of the third crystal and the back electrifying surface of the fourth crystal and are connected to a positive electrode; and gold wires are led out from the electrifying surfaces on the other sides of the four crystals and are connected to a negative electrode. The KTP Q-switching and parameter dual-function device capable of compensating the walk-off and the static birefringence achieves an electrooptical Q-switching function in a voltage decreasing working way, compensates a walk-off angle and a static birefringence phase delay as well as achieves two functions of a parameter effect and electrooptical Q-switching, and eliminates influence on the phase matching angle when the crystals are pressurized.
Description
Technical field
The present invention relates to a kind of electro-optical Q-switch device, be specially and a kind ofly in laser, can realize electric-optically Q-switched and the device of parameter nonlinear effect occurs simultaneously.
Background technology
The KTP crystalloid has large effective nonlinear coefficient and good electro-optical properties, therefore utilizes the research of this crystalloid development nonlinear effect and electric light multiplexing device to cause the great interest of people.1994, Japanese T. Takunori etc. were with 1 * a 3 * 5mm
3Ktp crystal, to Nd:YVO
4The 1064nm laser of output has been realized simultaneously frequency multiplication and accent Q.When repetition rate 100Hz, modulation obtains the 532nm pulse laser output that pulsewidth is 18ns, peak power is 15.4W (Takunori Taira, Takao Kobayashi. Q-switching and frequency doubling of solid-state laser by a single intracavity KTP crystal [J], IEEE. J. Quantum Eleronies, 1994,30 (3): 800-804).Nineteen ninety-five, they have realized again green glow output (Takunori Taira, the Takao Kobayashi. Intraeavity frequency doubling and Q-switching in diode laser pumped Nd:YVO of peak power 230W
4Laser [J], APPlied Optics 1995,34 (21): 4298-4301).1997, matching angle and applied voltage when Yao Jianquan etc. transfer Q to the ktp crystal frequency multiplication have carried out calculating (J.Q.Yao, X.W.Sun, H.S.Kwok. Analysis of simultaneous Q-switching and frequency doubling in KTP [J], Journal of modern optics, 1997,44 (5): 997-1004).2000, Chen Fei etc. adopted 2 * 4 * 10mm
3Ktp crystal, be 1kHz in repetition rate, l/4 voltage 647V during pump power 1W, has realized the TEM of pulsewidth 12ns, peak power 762W
00Mould output, and realized device, whole volume only has half colour film size, and (new type electro is transferred Q inner chamber green (light) laser [J], Chinese engineering science, 2000,2 (4): 39-42) for Chen Fei, Huo Yujing.Ktp crystal is used for optical parametric oscillation and electric-optically Q-switched research seldom simultaneously, and Zhang Peng, Zhang Yuping etc. are used for simultaneously optical parametric oscillation and have electric-optically Q-switchedly carried out theoretical calculating ktp crystal, calculate, for 5 ' a 5 ' 20mm
3Ktp crystal, if obtain the parameteric light of 1.57mm, the phase matching angle of KTP should be q=90 °, j=26.8 °, the half-wave voltage that applies at crystal z axle should be 887V.In the above scheme with KTP as non-linear and electro-optical Q-switch device, all used a ktp crystal, and cut according to the phase matched angle.But because there is static birefringent phase delay in ktp crystal, use the design of a KTP to have influence on electric-optically Q-switched closing effect; And have deviation angle at parameter as the time spent according to the ktp crystal of the phase matched angle under normal temperature cutting, have influence on the efficient of parameter conversion.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide a kind of can compensation walk from the electric-optically Q-switched parameter double-function device of the KTP of static birefringent.
The present invention realizes that the scheme that above purpose is taked is: a kind of compensation is walked from the KTP with static birefringent and is transferred Q parameter double-function device, comprise shell, electrode, electrooptic crystal, electrooptic crystal comprises four ktp crystals that satisfy the critical phase matched of II class, from left to right sets gradually first ktp crystal, second ktp crystal that relative first ktp crystal half-twist placed, the 3rd ktp crystal of relative first ktp crystal Rotate 180 ° placement and the 4th ktp crystal of relative the 3rd ktp crystal half-twist placement; The gold-plated film of upper energising face at first ktp crystal, the gold-plated film of lower energising face, the gold-plated film of front energising face at second ktp crystal, the gold-plated film of rear energising face, the gold-plated film of upper energising face at the 3rd ktp crystal, the gold-plated film of lower energising face is at the gold-plated film of front energising face of the 4th ktp crystal, the gold-plated film of rear energising face; Draw gold thread from the gold-plated film of lower energising face of the gold-plated film of front energising face of the gold-plated film of upper energising face of first ktp crystal, second ktp crystal, the 3rd ktp crystal and the gold-plated film of rear energising face of the 4th ktp crystal, be connected to positive electrode; Draw gold thread from the gold-plated film of upper energising face of the gold-plated film of rear energising face of the gold-plated film of lower energising face of first ktp crystal, second ktp crystal, the 3rd ktp crystal and the gold-plated film of front energising face of the 4th ktp crystal, be connected to negative electrode.
As a further improvement on the present invention, the 3rd ktp crystal of second ktp crystal placing of first ktp crystal, relative first ktp crystal half-twist, relative first ktp crystal Rotate 180 ° placement and the 4th ktp crystal that relative the 3rd ktp crystal half-twist placed are the ktp crystal of low conductivity.
As a further improvement on the present invention, first second ktp crystal, the 3rd ktp crystal of relative first ktp crystal Rotate 180 ° placement and the 4th critical phase matched of ktp crystal employing II class degeneracy parameter of relative the 3rd ktp crystal half-twist placement that ktp crystal, relative first ktp crystal half-twist are placed, cutting angle is q=52.3 °, j=0 °.
As a further improvement on the present invention, first ktp crystal, second ktp crystal of relative first ktp crystal half-twist placement, the 3rd ktp crystal of relative first ktp crystal Rotate 180 ° placement and the logical light face of the 4th ktp crystal that relative the 3rd ktp crystal half-twist placed are square.
As a further improvement on the present invention, the 3rd ktp crystal of second ktp crystal that first ktp crystal, relative first ktp crystal half-twist are placed, relative first ktp crystal Rotate 180 ° placement interior logical light face relative with the 4th ktp crystal that relative the 3rd ktp crystal half-twist placed links to each other with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 2128nm.
As a further improvement on the present invention, the 3rd ktp crystal of second ktp crystal that first ktp crystal, relative first ktp crystal half-twist are placed, relative first ktp crystal Rotate 180 ° placement placed successively with the 4th ktp crystal that relative the 3rd ktp crystal half-twist placed, interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 2128nm.
The present invention realizes that above purpose principle is:
The cutting angle of the critical phase matched of ktp crystal degeneracy II class is q=52.3 °, j=0 °, therefore the propagation of light wave in the monolithic ktp crystal exists natural birefringence and deviation angle under this kind cutting mode, adopts rotate to an angle method compensation deviation angle and the static phase of serial connection of four identical ktp crystals to postpone.
The phase delay that polarised light produces during by the monolithic ktp crystal is:
In the following formula, first Γ s is the phase delay that natural birefringence causes, and be irrelevant with extra electric field; Second Γ
EThe phase delay that is produced by DC Electric Field.
If at identical ktp crystal that has rotated 90 ° of serial connection, then the phase delay that produces is during the ktp crystal of polarised light by serial connection after this piece ktp crystal:
At this moment, natural birefringence (n
z-n
x) compensated.Therefore, our designed structure can be good at compensating the natural birefringence of ktp crystal.According to above-mentioned derivation, in twos after the docking again the phase delay of four ktp crystals of half-twist serial connection be:
V is added voltage in the z-direction, can calculate thus needed half-wave voltage V π.In addition, in parallel on series connection, the electricity on four ktp crystal optics, produce
The required half-wave voltage of phase delay is 1/4 of monolithic KTP electro-optical Q-switch.
If logical light face length of side d=4mm, logical light length is L, the d/L value not simultaneously, corresponding half-wave voltage is as shown in the table:
The required half-wave voltage of the different aspect ratios of table one
Realize also need considering the compensation of deviation angle after the compensation of static phase delay.Ktp crystal adopts the critical phase matched of II class degeneracy parameter (q=52.3 °, φ=0 °), the cutting of z axle, and optical propagation direction is parallel to the y axle.Suppose that parameteric light is by its direction of propagation of energy behind ktp crystal and the generation of fundamental frequency light
Deviation angle, after this piece crystal, place an other identical ktp crystal, making two angles between the ktp crystal optical axis is 180 °, at this moment, the deviation angle of the parameteric light by second ktp crystal is
, it with
Size is identical, but is distributed in the complete relative both sides of fundamental frequency optical propagation direction.Therefore, when fundamental frequency light passed through two ktp crystals, parameteric light at first was offset downwards in the 1st parameter crystal, upwards is offset again when the 2nd parameter crystal, has obtained compensation.In apparatus of the present invention, first and the 3rd ktp crystal, second and the 4th ktp crystal have been realized the compensation of deviation angle.
Beneficial effect of the present invention:
As parameter and electro-optical Q-switch device, a device has been realized parameter and electric-optically Q-switched two kinds of functions simultaneously with KTP in the present invention, and one two, 34 two pairs of relative half-twists of ktp crystal are placed, and have compensated static birefringent phase delay; ° placement of one three, 24 two pairs of relative Rotate 180s of ktp crystal has compensated deviation angle; The impact on phase matching angle is moved back when pressing working method to eliminate the crystal pressurization in employing.
Description of drawings:
Fig. 1. the device principle schematic diagram that four crystal optical cements connect
Fig. 2. the device principle schematic diagram of four crystal plating anti-reflection film
The drawing explanation:
(1) first ktp crystal;
(2) second ktp crystal placing with respect to first ktp crystal half-twist;
(3) with respect to the 3rd ktp crystal of first ktp crystal Rotate 180 °;
(4) with respect to the 4th ktp crystal of the 3rd ktp crystal half-twist;
The gold-plated film of upper energising face of (5) first ktp crystals;
The gold-plated film of lower energising face of (6) first ktp crystals;
The gold-plated film of front energising face of (7) second ktp crystals;
The gold-plated film of rear energising face of (8) second ktp crystals;
The gold-plated film of energising face on (9) the 3rd ktp crystals;
The gold-plated film of lower energising face of (10) the 3rd ktp crystals;
The gold-plated film of front energising face of (11) the 4th ktp crystals;
The gold-plated film of rear energising face of (12) the 4th ktp crystals;
(13) positive electrode;
(14) negative electrode.
Embodiment:
The present invention is described in further detail below in conjunction with drawings and Examples.
Embodiment 1 is referring to Fig. 1, a kind of can compensation walk from the electric-optically Q-switched parameter double-function device of the KTP of static birefringent, comprise shell, electrode, electrooptic crystal, electrooptic crystal comprises four with the ktp crystal of the critical phase matched cutting of II class, from left to right sets gradually first ktp crystal 1, second ktp crystal 2 that relative first ktp crystal 1 half-twist placed, the 3rd ktp crystal 3 of relative first ktp crystal 1 Rotate 180 ° placement and the 4th ktp crystal 4 of relative the 3rd ktp crystal 3 half-twists placement; Four ktp crystals are all realized 2.128mm parameter degeneracy phase matched by the critical phase matched of II class, and matching angle is q=52.3 °, φ=0 °; At the gold-plated film 5 of the upper energising face of first ktp crystal 1, the gold-plated film 6 of lower energising face, the gold-plated film 7 of front energising face at second ktp crystal 2 placing with respect to first ktp crystal 1 half-twist, the gold-plated film 8 of rear energising face, at the gold-plated film 9 of switching on respect to the ktp crystal 1 Rotate 180 ° ktp crystal that rotation is placed 3, the gold-plated film 10 of lower energising is at the 4th gold-plated film 11 of ktp crystal 4 front energisings of placing with respect to the 3rd ktp crystal 3 half-twists, the gold-plated film 12 of rear energising; Draw gold thread from the gold-plated film 10 of lower energising face of the gold-plated film 7 of front energising face of the gold-plated film 5 of the upper energising face of first ktp crystal 1, second ktp crystal 2, the 3rd ktp crystal 3 and the gold-plated film 12 of rear energising face of the 4th ktp crystal 4, be connected to positive electrode; Draw gold thread from the gold-plated film 9 of upper energising face of the gold-plated film 8 of rear energising face of the gold-plated film 6 of the lower energising face of first ktp crystal, second ktp crystal, the 3rd ktp crystal and the gold-plated film of front energising face of the 4th ktp crystal 11, be connected to negative electrode.
First ktp crystal 1, second ktp crystal 2 of relative first ktp crystal half-twist placement, the 3rd ktp crystal 3 of relative first ktp crystal Rotate 180 ° placement and the 4th ktp crystal 4 that relative the 3rd ktp crystal 3 half-twists are placed are the ktp crystal of low conductivity.
First ktp crystal 1, second ktp crystal 2 of relative first ktp crystal half-twist placement, the 3rd ktp crystal 3 of relative first ktp crystal Rotate 180 ° placement and the logical light face of the 4th ktp crystal 4 that relative the 3rd ktp crystal 3 half-twists are placed are square.
The relative interior logical light face of the 3rd ktp crystal 3 of second ktp crystal 2 that first ktp crystal 1, relative first ktp crystal half-twist are placed, relative first ktp crystal Rotate 180 ° placement and the 4th ktp crystal that relative the 3rd ktp crystal 3 half-twists are placed 4 links to each other with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 2128nm.
Embodiment 2 is substantially the same manner as Example 1, difference is that second ktp crystal 2 that first ktp crystal 1, relative first ktp crystal half-twist place, the 3rd ktp crystal 3 of relative first ktp crystal Rotate 180 ° placement place successively with the 4th ktp crystal 4 that relative the 3rd ktp crystal 3 half-twists are placed, about midfeather 1mm, interior logical light face and outer logical light face all plate 1064nm and the double-colored anti-reflection film of 2128nm.
The present invention transfers Q and parametric device to be used for laser as laser.The parameter nonlinear interaction occurs by ktp crystal in 1064nm laser, and emission 2128nm laser is by the pulse laser of electric-optically Q-switched acquisition high-peak power.Adopt during electric-optically Q-switched work and move back pressure type impact on phase matching angle when eliminating the crystal pressurization.The boundary temperature of crystal is controlled by temperature controlling stove.
Claims (6)
1. a compensation is walked from the KTP with static birefringent to transfer Q parameter double-function device, comprises shell, electrode, electrooptic crystal, it is characterized in that:
Electrooptic crystal comprises four ktp crystals that satisfy the critical phase matched of II class parameter, from left to right sets gradually first ktp crystal (1), second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed, the 3rd ktp crystal (3) of relative first ktp crystal (1) Rotate 180 ° placement and the 4th ktp crystal (4) of relative the 3rd ktp crystal (3) half-twist placement;
The gold-plated film of upper energising face (5) at first ktp crystal (1), the gold-plated film of lower energising face (6), the gold-plated film of front energising face (7) at second ktp crystal (2), the gold-plated film of rear energising face (8), the gold-plated film of upper energising face (9) at the 3rd ktp crystal (3), the gold-plated film of lower energising face (10) is at the gold-plated film of front energising face (11) of the 4th ktp crystal (4), the gold-plated film of rear energising face (12); Draw gold thread from the gold-plated film of upper energising face (5) of first ktp crystal (1), the gold-plated film of front energising face (7) of second ktp crystal (2), the gold-plated film of lower energising face (10) of the 3rd ktp crystal (3) and the gold-plated film of rear energising face (12) of the 4th ktp crystal (4), be connected to positive electrode; Draw gold thread from the gold-plated film of upper energising face (9) of the gold-plated film of rear energising face (8) of the gold-plated film of lower energising face (6) of first ktp crystal, second ktp crystal, the 3rd ktp crystal and the gold-plated film of front energising face of the 4th ktp crystal (11), be connected to negative electrode.
2. a kind of compensation according to claim 1 is walked from the KTP with static birefringent and is transferred Q parameter double-function device, it is characterized in that:
The 4th ktp crystal (4) that second ktp crystal (2) of first ktp crystal (1), the placement of relative first ktp crystal (1) half-twist, the 3rd ktp crystal (3) of relative first ktp crystal (1) Rotate 180 ° placement and relative the 3rd ktp crystal (3) half-twist are placed is the ktp crystal of low conductivity.
3. a kind of compensation according to claim 1 is walked from the KTP with static birefringent and is transferred Q parameter double-function device, it is characterized in that:
First ktp crystal (1), second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed, the 4th ktp crystal (4) that the 3rd ktp crystal (3) and relative the 3rd ktp crystal (3) half-twist of ° placement of relative first ktp crystal (1) Rotate 180 are placed adopt the critical phase matched of II class degeneracy parameter, cutting angle is q=52.3 °, j=0 °.
4. a kind of compensation according to claim 1 is walked from the KTP with static birefringent and is transferred Q parameter double-function device, it is characterized in that:
First ktp crystal (1), second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed, the 3rd ktp crystal (3) of relative first ktp crystal (1) Rotate 180 ° placement and the logical light face of the 4th ktp crystal (4) that relative the 3rd ktp crystal (3) half-twist is placed are square.
5. a kind of compensation according to claim 1 is walked from the KTP with static birefringent and is transferred Q parameter double-function device, it is characterized in that:
The relative interior logical light face of the 4th ktp crystal (4) that second ktp crystal (2) that first ktp crystal (1), relative first ktp crystal (1) half-twist are placed, the 3rd ktp crystal (3) of relative first ktp crystal (1) Rotate 180 ° placement and relative the 3rd ktp crystal (3) half-twist are placed links to each other with the optical cement of insulation transparent, and outer logical light face plates 1064nm and the double-colored anti-reflection film of 2128nm.
6. a kind of compensation according to claim 1 is walked from the KTP with static birefringent and is transferred Q parameter double-function device, it is characterized in that:
First ktp crystal (1), second ktp crystal (2) that relative first ktp crystal (1) half-twist is placed, the 4th ktp crystal (4) that the 3rd ktp crystal (3) and relative the 3rd ktp crystal (3) half-twist of ° placement of relative first ktp crystal (1) Rotate 180 are placed are placed interior logical light face and outer logical light face plating 1064nm and the double-colored anti-reflection film of 2128nm successively.
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| CN201210511359.6A CN102983490B (en) | 2012-12-04 | 2012-12-04 | KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
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| CN201210511359.6A CN102983490B (en) | 2012-12-04 | 2012-12-04 | KTP (potassium titanium phosphate) Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104149212A (en) * | 2014-07-04 | 2014-11-19 | 中国科学院理化技术研究所 | Non-linear optical crystal cutting method capable of achieving complete walk-off compensation |
| CN106099633A (en) * | 2016-07-07 | 2016-11-09 | 江苏师范大学 | The laser instrument that a kind of mid-infrared width wavestrip laser exports simultaneously |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335959A (en) * | 1994-06-07 | 1995-12-22 | Toshiba Corp | Laser beam phase modulator |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| CN203119287U (en) * | 2012-12-04 | 2013-08-07 | 山东科技大学 | KTP Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
-
2012
- 2012-12-04 CN CN201210511359.6A patent/CN102983490B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335959A (en) * | 1994-06-07 | 1995-12-22 | Toshiba Corp | Laser beam phase modulator |
| CN1560968A (en) * | 2004-02-27 | 2005-01-05 | 山东大学 | Multi-block crystal electrooptical Q-switch device |
| CN203119287U (en) * | 2012-12-04 | 2013-08-07 | 山东科技大学 | KTP Q-switching and parameter dual-function device capable of compensating walk-off and static birefringence |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104149212A (en) * | 2014-07-04 | 2014-11-19 | 中国科学院理化技术研究所 | Non-linear optical crystal cutting method capable of achieving complete walk-off compensation |
| CN104149212B (en) * | 2014-07-04 | 2017-01-11 | 中国科学院理化技术研究所 | Non-linear optical crystal cutting method capable of achieving complete walk-off compensation |
| CN106099633A (en) * | 2016-07-07 | 2016-11-09 | 江苏师范大学 | The laser instrument that a kind of mid-infrared width wavestrip laser exports simultaneously |
| CN107465105A (en) * | 2017-07-31 | 2017-12-12 | 北京中材人工晶体研究院有限公司 | A kind of biaxal crystal electro-optic Q switch and preparation method thereof |
| CN107465105B (en) * | 2017-07-31 | 2019-12-06 | 北京中材人工晶体研究院有限公司 | double-crystal electro-optic Q-switch and preparation method thereof |
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