CN100570460C - Electro-optical control two-dimensional laser beam scanning array - Google Patents
Electro-optical control two-dimensional laser beam scanning array Download PDFInfo
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 21
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 10
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Abstract
An electro-optical control two-dimensional laser beam scanning array is characterized by comprising a control array and an emission array, wherein the control array is formed by N single-column electro-optical switch units, the structure of the emission array is a matrix structure of N rows and M columns formed by NxM electro-optical switch units to form an N + NxM beam scanning array, N and M are positive integers larger than 1, and the electro-optical switch units are formed by combining two first crystals and two second crystals which are different in optical axis direction: the incident light direction advances along the optical axis of the first crystal, and metal electrode pairs are plated on two opposite surfaces of the first crystal parallel to the optical axis so as to apply a transverse half-wave voltage to the crystal; the second crystal is a volume holographic grating. The invention has the advantages of small volume, compact structure, low power consumption, high switching speed, high scanning precision, large scanning range, simple control and the like, can realize the change of the emission angle by changing the inclination angle of the emergent surface, and has good development prospect.
Description
Technical field
The present invention relates to laser beam scanning, particularly electro-optical control laser beam two-dimensional scan array mainly is made up of array of controls and emission array two parts, by modulation array voltage, realizes beam splitting directional transmissions and electric light control emission to incoming signal light.Be mainly used in laser radar, laser communication, laser display, laser countermeasure (s), laser with message area such as taking aim at.
Background technology
The laser beam scanning system has important use at aspects such as laser radar, laser communication, laser displayes.For example laser radar must effectively scan laser beam to the particular probe space, to obtain the distance and bearing information of target.
Common two-dimentional light beam scanner adopts the mechanical scanning principle mostly, can realize two-dimentional light beam scanning in the wide region, and shortcoming is influenced by the mechanical drive precision, and scanning accuracy is limited, and sweep velocity is slow, and scanning system is often huger, and the microminiaturization degree is low.
The optical phased array optical beam scanner is realized beam deflection by the phase place of each phase control unit of control, be that a kind of non-mechanical high precision scanner is (referring to P.F.Mcmanamon, T.A.Dorschner, D.L.Corkum, et al, Optical phased array technology, Proc.IEEE, 1996,84,268-298), but as realizing high precision scanning in a big way, need a large amount of phase shifters, and the phase control unit size is little, and producting process difficulty is big, the cost height, sweep limit is limited, the more important thing is to be difficult to eliminate the optical problem that diffraction brings.People such as Wan Lingyu adopt LiNdO
3Crystal design the electric light phased array two-dimensional laser beam scanning device of a kind of multiple beam scanning (referring to Wan Lingyu etc., high speed electro-optical phased array two-dimensional laser beam scanning device, patent of invention, publication number CN 1554978A) its output bore is 7mm * 7mm, the maximum scan scope is 0.345mrad, have the also characteristics of line scanning, it is capable that sweep speed reaches 100ns/, can be by increasing modulation voltage, the lengthening electrode length increases sweep limit with methods such as improving cutting mode raising crystal electrooptical coefficient, but sweep limit is still very limited, has limited the application of this design in two-dimensional scan.
Based on the electro-optic scanner of ferroelectric domain engineering (referring to K.Gahagan, V.Gopalan, J.M.Robinson, andQ.X.Jia, Integrated electro-optic lens/scanner in a LiTaO
3Single crystal, Appl.Opt., 1999,38,1186-1190; And D.A.Scrymgeour, Y.Barad, V.Gopalan, K.T.Gahagan, Q.Jia, T.E.Mitchell, and J.M.Robinson, Large-angle electro-optic laser scanner on LiTaO
3Fabricated by in situ monitoring of ferroelectric-domain micropatterning, App.Opt., 2001,40 (34): 6236-6241) have that sweep velocity is fast, precision is high, do not have mechanical motion and the high advantage of integrated level, can realize two-dimensional scan, be well suited for high-precision space communtication and with taking aim at use, but existing device mostly is single beam deflection design greatly, clear aperture is little, is difficult to produce wide-aperture scanner.
It is by holographic recording and fixing method a plurality of optical modules to be integrated in the monolithic crystal to learn system to constitute reconfigurable three-dimensional photon that light is sold off 3-D integrated.Yan Xiaona etc. utilize the light of hierarchy to sell off the integrated Gamma network of setting up the single-stage correction, utilize the integrated photovoltaic that proposed of local Anaclasis variant holographic of partitioned organization to make a call to 2 * 2 straight-through exchange photoswitches of 2 * 2 straight-through exchange photoswitches and electric control (referring to Yan Xiaona, Liu Bo, Liu Li people, sell off the gamma network of holographic monolithic optics correction, optics journal, 1998 based on the stratiform fixed light, 18 (10), 1326-1331).Dong Qianmin etc. utilize codope LiNbO
3The photorefractive effect of crystal adopts the two centers of bi-coloured light holographic recording method, proposes LiNbO
3The optical add/drop multiplexer of crystal volume holographic grating (OADM) (referring to: Dong Qianmin, Liu Li people, Liu Dean, Luan Zhu etc., the optical add/drop multiplexer of lithium columbate crystal volume holographic grating, patent of invention, publication number CN 1424601A) and 40 * 40 wave length non-blocking photoswitches (referring to Dong Qianmin, Liu Li people, Liu Dean etc., 40 * 40 wave length non-blocking photoswitches, patent of invention, publication number: CN 1442727A), be used to realize the demultiplexing of wavelength-division multiplex signals and the space exchange between the signal light-wave, and the clog-free route switching of 40 wavelength channels.3-D optics based on crystal birefringence effect and photorefractive effect is integrated, have simple and compact for structure, solid state, advantages such as anti-environmental interference ability is strong, but the present integrated report that designs and produces electro-optical control two-dimensional laser beam scanning array of 3-D optics of still not using crystal birefringence effect and photorefractive effect.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiency of above scanning technique formerly, 3-D optics based on crystal birefringence effect and photorefractive effect is integrated, a kind of electro-optical control two-dimensional laser beam scanning array is provided, this scanning array should have is that sweep velocity is fast, precision is high, do not have the machinery motion, control is simple, volume is little, compact conformation and have the characteristics of certain integrated level.
Technical solution of the present invention is as follows:
A kind of electro-optical control two-dimensional laser beam scanning array, be characterized in forming by array of controls and emission array two parts, described array of controls is that N single-row electrooptical switching unit constitutes, the structure of described emission array is the matrix structure that is listed as by the capable M of N that NxM electrooptical switching unit constitutes, form the N+NxM beam scanning array, wherein N and M are the positive integers greater than 1, described electrooptical switching unit is combined by two different first crystal and second crystal of optical axis direction: the incident light direction is advanced along the optical axis of first crystal, be parallel to two relative plating metal on surface electrode pairs of optical axis at first crystal, so that apply horizontal half-wave voltage for this crystal; Second crystal is a volume holographic grating.
Described electrooptical switching unit is combined by two different lithium niobate first crystal and second of optical axis direction, first crystal is the pure lithium columbate crystal of plating metal on surface electrode pair, the two center light fixed hologram writing-methods of described second crystal by adopting have write down the double doping lithium niobate crystal of the high temperature oxidation process of volume holographic grating, 45 ° of the optical axis deflections of the optical axis of described second crystal and first crystal.
Described double doping lithium niobate crystal is LiNbO3:Ce:Cu crystal, LiNbO
3: Ce:Mn crystal or LiNbO
3: the Fe:Mn crystal.
The exit facet of second crystal of described emission array is provided with inclination angle [theta], the exit facet that this θ angle is a diffraction light and the angle of z axle, and then the output angle of light beam is θ
Out:
θ
Out=arcsin
-1(n
eSin θ)-and θ, n in the formula
eVery optical index for crystal.
One-channel signal light is from array of controls incident, and each unit all is independently 1 * 2 electrooptical switching in the array of controls, can realize the deflection to beam direction under electric field controls, thereby realizes beam splitting and directional transmissions.Flashlight enters emission array, adopts the electrooptical switching cell array structure in emission array, and the emission of signal beams can be realized in each electrooptical switching unit under effect of electric field.
Described electrooptical switching unit is combined by two different first crystal and second crystal of optical axis direction: the plating metal on surface electrode pair of first crystal, utilize the cross electro-optical effect of crystal to change the polarization state of incident optical signal; Adopt the method conglomerate holographic grating of 90 ° of records in second crystal, utilize 90 ° of deflections of the diffraction characteristic realization light beam of Bragg grating.Electrooptical switching unit design thinking is based on light and sells off the dependence of holographic diffraction efficiency to record and reading optical beam polarization direction.Changed the refractive index of crystal by photorefractive effect photorefractive crystal recording holographic grating, the change of this refractive index is to be provided with relevant with the character of recording medium and the structure of record.Under the approximate situation of reading light and diffraction light weak coupling, diffraction efficiency is proportional to the refractive index of change, and therefore for specific recording medium, diffraction efficiency is Polarization-Sensitive.The holographic grating that is recorded in the photorefractive crystal is read with the reference light of two kinds of cross polarizations respectively, if diffraction efficiency differs greatly in both cases, then common " switch " function just can realize.Therefore can utilize the polarization state of the cross electro-optical effect change incident optical signal of electro-optic crystal, realize the electrooptical switching effect of volume holographic grating.
Axially apply horizontal half-wave voltage U along electro-optic crystal a certain
π, be expressed as:
In the formula: λ is an incident wavelength, n
oBe the ordinary refraction index under this wavelength, γ is the electrooptical coefficient of crystal, and d is the crystal thickness of direction of an electric field, and l is the crystal length on the optical transmission direction.Find out from above-mentioned formula, can reduce half-wave voltage by reducing d/l.
In order to enlarge the sweep limit of emission array, at exit facet the inclination angle of θ is set, obtain flashlight output angle θ
OutFor:
θ
out＝arcsin
-1(n
e?sinθ)-θ
In the manufacturing process of cell array, the setting at the θ inclination angle by changing the switch element exit facet just can change the scanning angle scope of a certain direction neatly.
The power consumption w that electrooptical switching adds the electrode part is expressed as:
Wherein: z is capacitive reactance, and C is an electric capacity, and λ is an incident wavelength, n
oBe the ordinary refraction index under this wavelength, γ is an electrooptical coefficient, and d is the crystal thickness of direction of an electric field, and l is the electrode length on the optical transmission direction, and b is perpendicular to the electrode length on the optical transmission direction, ε
rBe the relative dielectric constant of crystal, ε
0Be the specific inductive capacity in the vacuum, f is a modulating frequency.
The present invention has that volume is little, compact conformation, low in energy consumption, advantage such as switching speed is fast, scanning accuracy is high, sweep limit is big, control is simple, and can realize the change of emission angle by the inclination angle that changes exit facet, has bright development prospect.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1.
Fig. 2 is the distribution and the light transmission synoptic diagram of the embodiment of the invention 1 scanning array internal electrical photoswitch.
Fig. 3 is that the embodiment of the invention 1 matrix type on-off circuit is arranged synoptic diagram.
Fig. 4 is the distribution and the light transmission synoptic diagram of the embodiment of the invention 2 internal electrical photoswitches.
Fig. 5 is the theory structure synoptic diagram of the embodiment of the invention 2 electrooptical switching unit.
Fig. 6 is the integrated making synoptic diagram of the embodiment of the invention 2 emission arrays.
Specific embodiments
Below in conjunction with embodiment and accompanying drawing electro-optical control two-dimensional laser beam scanning array of the present invention is described further, but should limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the structural representation of electro-optical control two-dimensional laser beam scanning array embodiment 1 of the present invention.The N=10 of the embodiment of the invention 1, M=10, it is the lithium niobate electro-optical switch array structure of a kind of 10+10 * 10, electro-optical control two-dimensional laser beam scanning array is made up of array of controls and emission matrix two parts, array of controls adopts 10 lithium columbate crystal electrooptical switching units in series structures (numbering 100-109), each unit can be under electric field controls to 90 ° of deflections of beam direction, thereby realize beam splitting and directional transmissions.Adopt 10 * 10 electrooptical switching matrix structure (numbering 200-299) in emission array, the directional transmissions of signal beams can be realized in each electrooptical switching unit under effect of electric field.Such array of controls and emission array combination have just constituted the lithium niobate electro-optical switch array structure of 10+10 * 10, and Anaclasis variant holographic grating electrooptical switching is adopted in the electrooptical switching design.When light signal edge-x direction goes into to inject scanning array, incident light is along the optical axis direction transmission of crystal in the array of controls, if to some unit wherein, for example No. 105, apply half-wave voltage, then body grating can produce diffraction to incident light, diffraction light enters emission array with respect to after 90 ° of the former incident light direction deflections, in emission array still along the transmission of the optical axis direction of electrooptical switching unit 250-259, if to some unit wherein, for example No. 255, apply half-wave voltage, then the body grating of this unit produces diffraction to incident light, and diffraction light, transmits at free space with certain emission angle along the outgoing of z direction of principal axis at No. 255 unit.The emission angle of each optical switch element is well-determined in the same row, by changing the setting at exit facet θ inclination angle, realizes different light beam shooting angles, just can change sweep limit neatly.
The electrooptical switching that Fig. 2 provides embodiment 1 inside distributes and the light transmission synoptic diagram.Array of controls adopts 10 electrooptical switching units in series structures, emission array adopts 10 * 10 electrooptical switching matrix structure, optical switch element in array of controls and the emission array is identical structure, and only be that the arrangement mode of size and unit is different, each unit partly combines by adding metal electrode part and volume holographic grating.Realize the beam splitting and the directional transmissions of light beam in the array of controls by effect of electric field, the emission of light beam can be realized in each electrooptical switching unit in the emission array under effect of electric field.
Estimate the loss that is subjected to when light beam transmits in emission array below in the crystal unit of rectangular array structure.Here for analyzing for simplicity, the unit in array of controls and the emission matrix is considered as identical, do not consider generation loss and reflection loss between each unit.Obviously the loss minimum that the incident light of No. 200 optical switch element is subjected in this structure, the loss maximum that the incident light of No. 299 optical switch element is subjected to.Incident intensity is I
0, unit size is l=10mm, and the absorption coefficient of crystal is α=1%/cm, and then the incident intensity of (10,10) number unit is:
I
(10，10)＝I
0exp(-20αl)＝I
0exp(-0.2)＝0.8187I
0
Because crystal absorption introducing loss causes the incident intensity of No. 200 unit and No. 299 unit to differ and not quite, is acceptable here, main loss derives from the switch efficiency (diffraction efficiency) of electrooptical switching in view of this.It is very convenient that a very important advantage of this rectangular configuration is exactly to arrange in the unit, can do very compactly, and control algolithm is simple, reduces design and cost of manufacture significantly.
Fig. 3 is that the embodiment of the invention 1 matrix type on-off circuit is arranged synoptic diagram.According to the characteristic distributions of electrooptical switching in the array, also used the matrix type structure in the making of on-off circuit with on arranging, promptly the back electrode of one group of level in the array of controls is connected together and draw, be referred to as column electrode (300-309); Vertical one group of positive electrode in the emission array connected together draw, be referred to as row electrode (310-319).In this two-dimensional structure, (x, y) number unit emission need start the gauge tap of x number and y number simultaneously if start the.For example at a time simultaneously on No. 309 column electrodes and No. 318 row electrodes, apply voltage, just can realize that light beam is from 298 unit outgoing.The electric light array scanning can be realized by programming.
Embodiment 2
Fig. 4 is the distribution and the light transmission synoptic diagram of the embodiment of the invention 2 internal electrical photoswitches.Embodiment 2 is 5+5x20 scanning arrays.Array of controls adopts 5 lithium columbate crystal electrooptical switching units in series structures (numbering 400-404), each unit can be under electric field controls to 90 ° of deflections of beam direction, thereby realize beam splitting and directional transmissions.Adopt 20 * 5 electrooptical switching matrix structure (numbering 500-599) in emission array, the directional transmissions of signal beams can be realized in each electrooptical switching unit under effect of electric field.Such array of controls and emission array combination have just constituted the lithium niobate electro-optical switch array structure of 5+20 * 5,
Fig. 5 is the theory structure synoptic diagram of the embodiment of the invention 2 electrooptical switching unit.The holographic electrooptical switching of body comprises and is plated in the lip-deep metal electrode of lithium columbate crystal and is recorded in volume holographic grating two parts in the lithium columbate crystal, utilizes the Bragg diffraction characteristic of the cross electro-optical effect of lithium columbate crystal and body grating to realize the light signal switching effect of the holographic electrooptical switching of body.The holographic electrooptical switching of body has the exchange velocity and the low loss characteristic of microsecond level, and its volume is less, can be integrated into large-scale electrooptical switching matrix easily.
The electric light unit that opens the light is divided into two parts: first 601 is for adding the metal electrode part, and the optical axis c of crystal is parallel to the z direction.Metal electrode is added on two opposite flanks that lithium columbate crystal is parallel to coordinate surface yz symmetrically, applies horizontal half-wave voltage U along lithium columbate crystal x direction
π, with polarization of incident light direction half-twist.Second portion 602 is the volume holographic grating part, the optical axis of crystal tilts along 45 ° of directions, the existence of body grating to propagate along optical axis of crystal direction, wavelength is the light signal generating diffraction that λ and light wave direction of vibration are parallel to coordinate y direction, the diffraction light wave is parallel to optical axis along propagation of coordinate y direction and light wave direction of vibration, and volume holographic grating then is transparent to the flashlight that does not meet above-mentioned condition.Incoming signal light I
IntBe ordinary polarized light, and the flashlight of diffraction is unusual polarized light, the two wave vector size is difference and direction is vertical mutually slightly.
Electrooptical switching cell operation process is as follows:
Wavelength is the flashlight I that λ, direction of vibration are parallel to coordinate x direction
IntEnter the holographic electrooptical switching of body along optical axis of crystal direction, if do not add horizontal half-wave voltage in metal electrode part 601, light signal I then
IntDirection of vibration is constant when arriving volume holographic grating, thereby directly continues along the transmission of optical axis of crystal direction by grating, and note is made I
Out(o), the pass-through state of the holographic electrooptical switching of this corresponding body; If lithium columbate crystal is added horizontal half-wave voltage (along the x direction) in the metal electrode part, owing to the cross electro-optical effect of lithium columbate crystal makes its induction main shaft rotate 45 ° along the z axle, when light signal arrives volume holographic grating 602, direction of vibration becomes and is parallel to coordinate y direction, this moment, volume holographic grating was to the light signal generating diffraction, flashlight behind the diffraction is propagated and direction of vibration is parallel to the optical axis of crystal along coordinate y direction, and note is made I
Out(e), the switching shape of this corresponding electrooptical switching unit.Adopt the mode of 90 ° of records can in lithium columbate crystal, write down the diffraction Bragg grating, the realization light beam perpendicular to the outgoing of z direction of principal axis.
Because Bragg grating is 90 ° to the angle of diffraction of flashlight, if the exit facet of crystal is not provided with the inclination angle, the signal beams of emission will be perpendicular to the exit facet of crystal.In order to enlarge the sweep limit of emission array, at exit facet inclination angle [theta] is set, can obtain output angle θ
Out:
θ
out＝arcsin
-1(n
e?sinθ)-θ
By changing the setting at exit facet θ inclination angle, just can realize the change of certain unit emission angle neatly.If be provided with along the unit emergence angle of a certain direction (for example vertical, level or arbitrarily angled) identically, just can change the sweep limit of a certain direction that interrelates with it.
In 10 * 10 emission array, the inclination angle that each row can be set is identical, and the scanning angle scope of horizontal direction is-5.75 °～+ 5.75 °.Here get n
e=2.14, the θ angle can specifically be provided with as follows:
First row, θ=-5 °,
Secondary series, θ=-4 °,
The 3rd row, θ=-3 °,
The 4th row, θ=-2 °,
The 5th row, θ=-1 °,
The 6th row, θ=1 °,
The 7th row, θ=2 °,
The 8th row, θ=3 °,
The 9th row, θ=4 °,
The tenth row, θ=5 °,
In 20 * 5 emission array, the inclination angle that each row can be set is identical, and the scanning angle scope of vertical direction is-11.81 °～+ 11.81 °.Here still get n
e=2.14, the θ angle can specifically be provided with as follows:
First row, θ=-10 °,
Second row, θ=-9 °,
The third line, θ=-8 °,
Fourth line, θ=-7 °,
Fifth line, θ=-6 °,
The 6th row, θ=-5 °,
The 7th row, θ=-4 °,
The 8th row, θ=-3 °,
The 9th row, θ=-2 °,
The tenth row, θ=-1 °,
The tenth delegation, θ=1 °,
The 12 row, θ=2 °,
The tenth triplex row, θ=3 °,
Ariadne, θ=4 °,
The tenth five-element, θ=5 °,
The 16 row, θ=6 °,
The 17 row, θ=7 °,
The 18 row, θ=8 °,
The 19 row, θ=9 °,
The 20 row, θ=10 °,
Fig. 6 provides the integrated making synoptic diagram of 10 * 10 emission arrays.The pure lithium columbate crystal of crystal by adopting that needs metallized electrode needs the LiNbO of record crystal selection by high temperature oxidation process
3: the Ce:Cu crystal, each switch element is of a size of 5 * 2.5 * 2.5mm in the array of controls
3, each switch element is of a size of 10 * 5 * 5mm in the emission array
3, all surface of crystal has all passed through optical polish, and adjacent cells can be by the transparent insulation glue bond together, the densification of implementation structure, the outermost layer of array can install the glassivation of high permeability additional.The size of total flat-bed scanning array is about 110 * 60 * 5mm
3Because it is different with the optical axis direction of volume holographic grating part to add the metal electrode part, therefore can't make in a lithium columbate crystal, can take two parts to make respectively, then two parts is bonded together, and needs to adopt the bonding agent of refractive index match here.In the manufacturing process of emission array, can adopt integrated mode in a lithium columbate crystal.The left side is the metal electrode part, at 60 * a 5 * 5mm
3The lithium niobate crystal surface make 10 identical metal electrodes, metal electrode is the Au/C that sputter is made
rThin layer, thickness are 0.1 μ m, are the insulation course of 1 millimeters thick between the metal electrode; The right is the volume holographic grating part, at 50 * 5 * 5mm
3Lithium columbate crystal in integrated 10 volume holographic gratings that are equal to.Then left and right sides two parts are bonded together, have just constituted 1 * 10 matrix, 10 1 * 10 such matrixes are bonded together, just constitute 10 * 10 emission matrix.The power consumption of gating matrix and emission matrix is also decided by control mode, and under certain modulating frequency, the gauge tap that a certain moment starts has two, and therefore total power consumption is the power consumption sum of two unit.If get modulating frequency is f=10
4, the power consumption w that obtains＜10W; If get modulating frequency is f=10
5, the power consumption w that obtains＜100W.
Lithium columbate crystal is insensitive to the light wave of optical communication near-infrared band, thereby can not come the recording holographic grating with near infrared light.Adopt the double wave regular way can sort this problem out, promptly the light with the visible waveband of crystal sensitivity writes down body grating, light with the optical communication near-infrared band is read body grating, reads light like this and can not produce destruction to the body grating of record, thereby kept the long-time stability of body grating.Realize that best holography reads, recording light and read the Bragg condition that light must satisfy body grating simultaneously.Pure lithium columbate crystal is because defective seldom, is difficult to write down therein the body grating of high-diffraction efficiency.The lithium columbate crystal of the single doping of transition metal (Fe, Mn etc.), although can realize the holographic recording of high-diffraction efficiency, the problem that exists volatility and scattered noise to amplify.Adopt the means that heat (heat fixation) in the recording process or power up (electricity is fixing), overcome volatile problem, but because complicated operation, and precision is lower, has limited their application in practice.Adopt two centers holographic recording scheme, promptly adopt bi-coloured light in double doping lithium niobate crystal, to write down non-volatile local body grating, have characteristics such as high-diffraction efficiency, low scattered noise and processing in real time, for photochemical, integrated designs entirely provides important possibility and technological means, be the Anaclasis variant grating fixed solution that application prospect is arranged at present most.Therefore choose codope LiNbO3:Ce:Cu crystal, LiNbO here
3: Ce:Mn crystal or LiNbO
3: the Fe:Mn crystal is made volume holographic grating, and adopts two center light fixed hologram writing-methods.With wavelength be the Sine Modulated ruddiness of 632.8nm as recording light, with wavelength be the even ultraviolet light of 365nm as sensitization light, realized holographic non-volatile storage, body grating can not be wiped free of when reading, thereby has kept the long-time stability of device.Recording wavelength decision emission wavelength if change recording wavelength, then needs correspondingly to change emission wavelength.
Show by above analysis and experiment, the present invention has that volume is little, compact conformation, low in energy consumption, advantage such as switching speed is fast, scanning accuracy is high, sweep limit is big, control is simple, and can realize the change of emission angle having bright development prospect by the inclination angle that changes exit facet.
Claims (4)
1, a kind of electro-optical control two-dimensional laser beam scanning array, it is characterized in that forming by array of controls and emission array two parts, described array of controls is that N single-row electrooptical switching unit constitutes, the structure of described emission array is the matrix structure that is listed as by the capable M of N that NxM electrooptical switching unit constitutes, form the N+NxM beam scanning array, wherein N and M are the positive integers greater than 1, described electrooptical switching unit is combined by two different first crystal and second crystal of optical axis direction: the incident light direction is advanced along the optical axis of first crystal, be parallel to two relative plating metal on surface electrode pairs of optical axis at first crystal, so that apply horizontal half-wave voltage for this crystal; Second crystal is a volume holographic grating.
2, electro-optical control two-dimensional laser beam scanning array according to claim 1, it is characterized in that described electrooptical switching unit is combined by two different lithium columbate crystals of optical axis direction, first crystal is the pure lithium columbate crystal of plating metal on surface electrode pair, the two center light fixed hologram writing-methods of described second crystal by adopting have write down the double doping lithium niobate crystal of the high temperature oxidation process of volume holographic grating, 45 ° of the optical axis deflections of the optical axis of described second crystal and first crystal.
3, electro-optical control two-dimensional laser beam scanning array according to claim 2 is characterized in that described double doping lithium niobate crystal is LiNb O
3: Ce:Cu, LiNbO
3: Ce:Mn or LiNbO
3: the Fe:Mn crystal.
4, according to each described electro-optical control two-dimensional laser beam scanning array of claim 1 to 3, the exit facet that it is characterized in that second crystal of described emission array is provided with inclination angle [theta], the exit facet that this θ angle is a diffraction light and the angle of z axle, then the output angle of light beam is θ
Out:
θ
Out=arcsin
-1(n
eSin θ)-and θ, n in the formula
eVery optical index for crystal.
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| CN103926691B (en) * | 2014-03-22 | 2016-08-24 | 吉林大学 | What a kind of array of photoswitch was constituted has the light path device of projection and camera function concurrently |
| CN103926690B (en) * | 2014-03-22 | 2016-08-17 | 吉林大学 | A kind of array of photoswitch and the display screen with scanning and interactive function of composition thereof |
| CN103984089B (en) * | 2014-06-13 | 2016-04-06 | 吉林大学 | The true bore hole 3D display system of non-holographic of a kind of array of photoswitch and formation thereof |
| CN105891926B (en) * | 2016-06-24 | 2018-12-14 | 北京京东方光电科技有限公司 | Light diffraction device, display base plate, touch base plate and preparation method thereof |
| CN108415205B (en) * | 2017-02-09 | 2022-11-04 | 松下知识产权经营株式会社 | Optical scanning apparatus, optical receiving apparatus, and optical detection system |
| CN109725472A (en) * | 2017-10-30 | 2019-05-07 | 福州高意通讯有限公司 | A kind of OSA of electropical scanning |
| CN108459448A (en) * | 2018-03-29 | 2018-08-28 | 中国科学院西安光学精密机械研究所 | Two-dimensional light beam scanning method based on optical phased array and optical phased array |
| CN108828712B (en) * | 2018-06-11 | 2020-10-16 | 上海交通大学 | Large-scale integrated optical switch chip based on optical phased array |
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| US20040207801A1 (en) * | 1997-01-16 | 2004-10-21 | Faris Sadeg M. | Flat panel display and a method of fabrication therefor |
| EP1359752B1 (en) * | 2002-05-02 | 2007-05-30 | Eastman Kodak Company | Scanned display systems using color laser light sources |
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