CN1721919A - Electric optical waveguide optical phase modulator array and preparation method thereof - Google Patents
Electric optical waveguide optical phase modulator array and preparation method thereof Download PDFInfo
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- CN1721919A CN1721919A CN 200510025796 CN200510025796A CN1721919A CN 1721919 A CN1721919 A CN 1721919A CN 200510025796 CN200510025796 CN 200510025796 CN 200510025796 A CN200510025796 A CN 200510025796A CN 1721919 A CN1721919 A CN 1721919A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims abstract description 74
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000000227 grinding Methods 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 27
- 239000007772 electrode material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 1
- 239000000382 optic material Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 230000005693 optoelectronics Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
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- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
The waveguide type phase modulator array of electro-optic material consists of the following components from bottom to top: the photoelectric thin film waveguide comprises a lower cladding, an photoelectric waveguide layer and an upper cladding, wherein the upper cladding and the photoelectric waveguide layer are separated into a plurality of strip array structures by a plurality of linear isolation trenches; the strip electrodes of the upper electrode are respectively connected with a driving voltage source through electrode leads, and the driving voltage source is connected with a computer. The preparation method comprises the steps of growing the materials of each layer, preparing an isolation groove by photoetching, cutting, grinding and polishing the end face, plating an anti-reflection film, spot-welding an electrode lead and the like.
Description
Technical field
The present invention relates to optical phase modulator, particularly a kind of Waveguide mode optical phase-modulator array that adopts electrooptical effect and preparation method thereof.This device is the core component of optical phased array, belongs to the optical engineering field, is mainly used in the occasion that light beam is used in the space high-velocity scanning.
Background technology
In many application of laser optoelectronic, need light beam at spacescan.Traditional method is to adopt a tilting mirror or galvanometer.The sweep velocity that method obtained and the ratio of precision of this employing mechanical motion are lower.In order to improve sweep velocity, reduce the volume and weight of device, adapt to the needs that use in the space, people carry out deep research to the optical phased array technology.Optical phased array is a kind of optical device that makes the light phase generation periodic modulation of beam wave surface.Its ultimate principle as shown in Figure 1.When each unit of phase-modulator array 1 obtains one spatially during the time dependent phase place of linear distribution, beam wave surface will be deflected in the space, produce the effect of beam flying.In this technology, there is not mechanical moving element, therefore can obtain very high sweep velocity.The key of optical phased array technology is a phase-modulator array.People have utilized different materials and technology, have demonstrated the optical phased array performance.
One of technology formerly, (P.F.Mcmanamon, et.al.Proceedings of the IEEE, 1996, Vol.84, No.2 pp268-298) adopts liquid crystal to make the phase-modulator array.It has, and driving voltage is low, little advantages such as (the beam flying angle are big) of array cycle, but modulating speed is low, poor heat stability, operating wavelength range are restricted.Formerly two of technology, (E.Shekel, et.al., LEOS2002, paper WA2) adopt the AlGaAs semiconductor hetero-junction material to make waveguide type phase-modulator array, this structure has the modulating speed height, advantages such as the array cycle is little, but light beam coupling efficient is low, array size small scale, luminous power is restricted, and operating wavelength range is little.Formerly three of technology, (R.A.Meyer, APPLIED OPTICS, 1972, Vol.11, No.3 pp613-616) adopts electro-optic crystal to make phase-modulator, and it has advantages such as modulating speed is fast, but has shortcomings such as operating voltage height, material cost height.At crystalline material price height, the problem that volume is little, people and have developed the transparent ceramic material with electrooptical effect.Wherein lead lanthanum zirconate titanate (PLZT) is a kind of material of extremely paying attention to.Formerly four of technology, (J.A.Thomas et.al.OPTICSLETTERS, 1995, Vol.20, No.13 pp1510-1512) utilizes the cross electro-optical effect of PLZT material to make phase-modulator array 1, and its structure is as shown in Figure 2.Owing to utilize cross electro-optical effect, the distance that has the phase modulation (PM) effect on light path is very short, therefore requires operating voltage very high.Simultaneously, owing to adopted the structure of interdigital electrode, the size of each unit of array is bigger, so the angle of beam deflection is smaller.Formerly five of technology, (Q.W.Song et.al., APPLIEDOPTICS, 1996, Vol.35, No.17 pp3155-3162) adopts the longitudinal electro-optic effect of PLZT material to make phase-modulator array 1, and its structure is as shown in Figure 3.This structure applies voltage with transparency electrode, and the material on light path all has electrooptical effect.But in this structure, also there are contradiction in the size of electrode and the length of light path, when promptly increasing optical path length, must increase the electrode dimension, otherwise crosstalking between the array unit can have a negative impact.Therefore the size of array unit can not lower, so that the angle of beam deflection is also smaller.Simultaneously, in the technology formerly four and five that adopts PLZT, PLZT uses with the form of body block of material, so operating voltage is all than higher.
Summary of the invention
At the problem of above-mentioned technology formerly, the present invention proposes a kind of waveguide type electrooptical material phase-modulator array and preparation method thereof.
Technical solution of the present invention is as follows:
A kind of electric light wave guidance optical phase modulator array, be characterised in that its formation is successively: substrate, bottom electrode, electro-optic film waveguide and top electrode from bottom to top, described electro-optic film waveguide comprises under-clad layer, electro-optical transducer layer and top covering, described top covering and electro-optical transducer layer are divided into many bar shaped array structures by many linear isolating trenches, described top electrode is many bar shaped electrode structures, and described bottom electrode is a ground-electrode; The strip electrode of described top electrode links to each other with the driving voltage source respectively by contact conductor, and this driving voltage source links to each other with computing machine again.
The degree of depth of described isolating trenches from top electrode, top covering, reach electro-optical transducer layer bottom, but do not cut off bottom electrode.
The preparation method of described electric light wave guidance optical phase modulator array is characterized in that comprising the following steps:
(1) lower electrode material of on backing material, growing, the basic demand of this backing material is the coupling that has good thermal expansivity with the electro-optical transducer material, described electrode material is the alloy material based on gold, platinum, or the compound-material with electric conductivity;
(2) growth under-clad layer material on lower electrode material;
(3) preparation electro-optical transducer material on the under-clad layer material, the refractive index of described under-clad layer material should be lower than the refractive index of electro-optical transducer material;
(4) growth top covering material on the electro-optical transducer material, this top covering material is identical with the under-clad layer material;
(5) upper electrode material of on the top covering material, growing, this upper electrode material is identical with lower electrode material;
(6) adopt the photoetching technique of semiconductor devices planar technology to prepare isolating trenches, form many bar shaped array structures that comprise top electrode;
(7) cut into slice, thin piece in direction perpendicular to strip electrode, this slice, thin piece is from bottom to top successively: substrate, bottom electrode, under-clad layer, electro-optical transducer layer, top covering and top electrode, described top electrode has many bar shaped array structures, through grinding and polishing cutting end face the anti-reflection film of evaporation respective wavelength;
(8) spot-wedling electrode goes between on each strip electrode of top electrode, and finishes the encapsulation of array device.
The method of described growth is vacuum evaporation method, sputtering method or colloidal sol-gel method.
Described electro-optical transducer material is transparent electro-optic ceramics material; Adopt the preparation of colloidal sol-gel and sintering process, also can prepare with vacuum sputtering and evaporation technology.
Described electro-optical transducer material is an electro-optic crystal, adopts chip bonding process and substrate and electrode material to merge, and adopts the technology of machining, polishing that crystalline material is thinned to the needed thickness of waveguide then.
The advantage of phase-modulator array of the present invention is:
1, owing to adopt membraneous material, reduced electrode separation, under the requirement that obtains the same electrical luminous effect, operating voltage can reduce greatly.
2, adopt the slab waveguide structure, the light beam direct of travel is parallel with electrode, compares technology formerly, and operating distance greatly increases.Therefore under the requirement that obtains identical phase shift, needed electrooptic birefringence can correspondingly reduce, thereby also can reduce operating voltage greatly.
3, adopt waveguiding structure and technology, the spacing between the array unit that the light beam side direction is arranged can reduce greatly, thereby can increase array density, brings the benefit of the angular range that increases beam flying.
4, adopt the electrooptic birefringence effect of electro-optic ceramics and electro-optic crystal material, compare with semiconductor material, have advantages such as good stability, modulating speed is fast, operating wavelength range is big with liquid crystal.
Description of drawings
Fig. 1 is the ultimate principle of optical phased array;
Fig. 2 is the synoptic diagram that adopts the cross electro-optical effect structure;
Fig. 3 is the synoptic diagram that adopts the longitudinal electro-optic effect structure;
Fig. 4 is the basic structure synoptic diagram of electro-optical transducer phase-modulator array of the present invention;
Fig. 5 is Fig. 4 part-structure enlarged diagram;
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
See also Fig. 4 and Fig. 5 earlier, Fig. 4 is the basic structure synoptic diagram of electro-optical transducer phase-modulator array of the present invention, Fig. 5 is Fig. 4 part-structure enlarged diagram, as seen from the figure, the formation of electric light wave guidance optical phase modulator array of the present invention is from bottom to top successively: substrate 2, bottom electrode 3, electro-optic film waveguide 1 and top electrode 4, described electro-optic film waveguide 1 comprises under-clad layer 11, electro-optical transducer layer 10 and top covering 12, described top covering 12 and electro-optical transducer layer 10 are divided into many bar shaped array structures by many linear isolating trenches 13, described top electrode 4 is many bar shaped electrode structures, and described bottom electrode 3 is a ground-electrode; The strip electrode of described top electrode 4 links to each other with driving voltage source 5 respectively by contact conductor 41, and this driving voltage source 5 links to each other with computing machine 6 again.
The degree of depth of described isolating trenches 13 from top electrode 4, top covering 12, reach electro-optical transducer layer 10 bottom, but do not cut off bottom electrode 3.
The preparation method of described electric light wave guidance optical phase modulator array comprises the following steps:
(1) lower electrode material of on backing material, growing, the basic demand of this backing material is the coupling that has good thermal expansivity with the electro-optical transducer material, described electrode material is the alloy material based on gold, platinum, or the compound-material with electric conductivity;
(2) growth under-clad layer material on lower electrode material;
(3) preparation electro-optical transducer material on the under-clad layer material, the refractive index of described under-clad layer material should be lower than the refractive index of electro-optical transducer material;
(4) growth top covering material on the electro-optical transducer material, this top covering material is identical with the under-clad layer material;
(5) upper electrode material of on the top covering material, growing, this upper electrode material is identical with lower electrode material;
(6) adopt the photoetching technique of semiconductor devices planar technology to prepare isolating trenches, form many bar shaped array structures that comprise top electrode;
(7) cut into slice, thin piece in direction perpendicular to strip electrode, this slice, thin piece is from bottom to top successively: substrate, bottom electrode, under-clad layer, electro-optical transducer layer, top covering and top electrode, described top electrode has many bar shaped array structures, through grinding and polishing cutting end face the anti-reflection film of evaporation respective wavelength;
(8) spot-wedling electrode goes between on each strip electrode of top electrode, and finishes the encapsulation of array device.
The method of described growth is vacuum evaporation method, sputtering method or colloidal sol-gel method.
Described electro-optical transducer material is transparent electro-optic ceramics material; Adopt the preparation of colloidal sol-gel and sintering process, also can prepare with vacuum sputtering and evaporation technology.
Described electro-optical transducer material is an electro-optic crystal, adopts chip bonding process and substrate and electrode material to merge, and adopts the technology of machining, polishing that crystalline material is thinned to the needed thickness of waveguide then.
Described isolating trenches 13 adopts the photoetching method of semiconductor devices planar technology to prepare, many bar shapeds of preparation array structure on top electrode 4.For the electrooptical material of different chemical character, adopt different lithography steps and technology.Material for not corrosion difficulty can adopt conventional photoetching process to realize.For the material that is difficult to corrode, the technology that can adopt the protruding seal of figure (Imprinting) directly preparation on unsintered colloidal sol-gel rubber material still; Also can adopt lift-off technology (Lift-off) to make the figure of photoresist earlier, prepare the material of relevant ducting layer again, use the removal of solvents photoresist then, remove the material above it simultaneously, stay the figure that needs; Also the method that can adopt several different process to combine prepares.
The embodiment 1 of electro-optical transducer phase-modulator array of the present invention adopts lead lanthanum zirconate titanate (PLZT) material preparation.PLZT is a kind of ferroelectric transparent ceramic material that integrates characteristics such as piezoelectricity, ferroelectric, electric light, photo-induced telescopic.It all has good transparency in visible and near-infrared band scope.Can obtain linear electro-optic coefficient by the component design and be better than LiNbO
3Tens times of monocrystalline perhaps have the PLZT transparent material of very strong secondary electro-optical characteristic.The secondary electrooptical coefficient that has obtained the PLZT material at present both at home and abroad can reach 10
-16～10
-15m
2/ V
2Magnitude.Utilize its electro-optic birefringent effect, can realize phase place, the intensity to incident light, the control of polarization.PLZT can adopt chemosynthesis and the preparation of high temperature sintering method, obtains the body block of material, remakes further processing.The PLZT membraneous material can adopt solvent-gel technique preparation, also can adopt the preparation of vacuum sputtering method.
Claims (6)
1, a kind of electric light wave guidance optical phase modulator array, be characterised in that its formation is successively: substrate (2), bottom electrode (3), electro-optic film waveguide (1) and top electrode (4) from bottom to top, described electro-optic film waveguide (1) comprises under-clad layer (11), electro-optical transducer layer (10) and top covering (12), described top covering (12) and electro-optical transducer layer (10) are divided into many bar shaped array structures by many linear isolating trenches (13), described top electrode (4) is many bar shaped electrodes, and described bottom electrode (3) is a ground-electrode; The strip electrode of described top electrode (4) links to each other with driving voltage source (5) respectively by contact conductor (41), and this driving voltage source (5) links to each other with computing machine (6) again.
2, electric light wave guidance optical phase modulator array according to claim 1, the degree of depth that it is characterized in that described isolating trenches (13) from top electrode (4), top covering (12), reach electro-optical transducer layer (10) bottom, but do not cut off bottom electrode (3).
3, the preparation method of the described electric light wave guidance optical phase modulator array of claim 1 is characterized in that comprising the following steps:
(1) lower electrode material of on backing material, growing, the basic demand of this backing material is the coupling that has good thermal expansivity with the electro-optical transducer material, described electrode material is the alloy material based on gold, platinum, or the compound-material with electric conductivity;
(2) growth under-clad layer material on lower electrode material;
(3) preparation electro-optical transducer material on the under-clad layer material, the refractive index of described under-clad layer material should be lower than the refractive index of electro-optical transducer material;
(4) growth top covering material on the electro-optical transducer material, this top covering material is identical with the under-clad layer material;
(5) upper electrode material of on the top covering material, growing, this upper electrode material is identical with lower electrode material;
(6) adopt the photoetching technique of semiconductor devices planar technology to prepare isolating trenches, form many bar shaped array structures that comprise top electrode;
(7) cut into slice, thin piece in direction perpendicular to strip electrode, this slice, thin piece is from bottom to top successively: substrate, bottom electrode, under-clad layer, electro-optical transducer layer, top covering and top electrode, described top electrode has many bar shaped array structures, through grinding and polishing cutting end face the anti-reflection film of evaporation respective wavelength;
(8) spot-wedling electrode goes between on each strip electrode of top electrode, and finishes the encapsulation of array device.
4, the preparation method of electric light wave guidance optical phase modulator array according to claim 3, the method that it is characterized in that described growth is vacuum evaporation method, sputtering method or colloidal sol-gel method.
5, the preparation method of electric light wave guidance optical phase modulator array according to claim 3 is characterized in that described electro-optical transducer material is transparent electro-optic ceramics material; Adopt the preparation of colloidal sol-gel and sintering process, also can prepare with vacuum sputtering and evaporation technology.
6, the preparation method of electric light wave guidance optical phase modulator array according to claim 3, it is characterized in that described electro-optical transducer material is an electro-optic crystal, adopt chip bonding process and substrate and electrode material to merge, adopt the technology of machining, polishing that crystalline material is thinned to the needed thickness of waveguide then.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018932A (en) * | 2012-12-13 | 2013-04-03 | 中国科学院上海光学精密机械研究所 | High-frequency electro-optic position phase modulator |
| CN107894669A (en) * | 2017-12-25 | 2018-04-10 | 武汉邮电科学研究院 | Graphene lithium niobate sandwich construction hybrid integrated optical modulator and preparation method thereof |
| CN109901263A (en) * | 2019-01-29 | 2019-06-18 | 浙江大学 | A kind of silicon substrate integrated optics phased array chip based on common electrode |
| CN111487792A (en) * | 2020-05-29 | 2020-08-04 | 济南晶众光电科技有限公司 | Fast polarization modulator based on nonlinear crystal |
| JP2021529989A (en) * | 2018-07-02 | 2021-11-04 | ノースロップ グラマン システムズ コーポレーション | Common Drive Electro-Optical Phase Modulator Array |
-
2005
- 2005-05-13 CN CN 200510025796 patent/CN1721919A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103018932A (en) * | 2012-12-13 | 2013-04-03 | 中国科学院上海光学精密机械研究所 | High-frequency electro-optic position phase modulator |
| CN103018932B (en) * | 2012-12-13 | 2015-06-17 | 中国科学院上海光学精密机械研究所 | High-frequency electro-optic position phase modulator |
| CN107894669A (en) * | 2017-12-25 | 2018-04-10 | 武汉邮电科学研究院 | Graphene lithium niobate sandwich construction hybrid integrated optical modulator and preparation method thereof |
| CN107894669B (en) * | 2017-12-25 | 2019-12-24 | 武汉邮电科学研究院 | Hybrid integrated optical modulator with graphene lithium niobate multilayer structure and preparation method thereof |
| JP2021529989A (en) * | 2018-07-02 | 2021-11-04 | ノースロップ グラマン システムズ コーポレーション | Common Drive Electro-Optical Phase Modulator Array |
| JP7320007B2 (en) | 2018-07-02 | 2023-08-02 | ノースロップ グラマン システムズ コーポレーション | Common Drive Electro-Optical Phase Modulator Array |
| CN109901263A (en) * | 2019-01-29 | 2019-06-18 | 浙江大学 | A kind of silicon substrate integrated optics phased array chip based on common electrode |
| CN111487792A (en) * | 2020-05-29 | 2020-08-04 | 济南晶众光电科技有限公司 | Fast polarization modulator based on nonlinear crystal |
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