CN1553482A - 绝缘体上硅的衬底上混合结构栅介质材料的制备方法 - Google Patents
绝缘体上硅的衬底上混合结构栅介质材料的制备方法 Download PDFInfo
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- CN1553482A CN1553482A CNA2003101226098A CN200310122609A CN1553482A CN 1553482 A CN1553482 A CN 1553482A CN A2003101226098 A CNA2003101226098 A CN A2003101226098A CN 200310122609 A CN200310122609 A CN 200310122609A CN 1553482 A CN1553482 A CN 1553482A
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CNB2003101226098A CN1300855C (zh) | 2003-12-19 | 2003-12-19 | 绝缘体上硅的衬底上混合结构栅介质材料的制备方法 |
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CNB2003101226098A CN1300855C (zh) | 2003-12-19 | 2003-12-19 | 绝缘体上硅的衬底上混合结构栅介质材料的制备方法 |
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CN1553482A true CN1553482A (zh) | 2004-12-08 |
CN1300855C CN1300855C (zh) | 2007-02-14 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100576455C (zh) * | 2007-12-05 | 2009-12-30 | 中国科学院微电子研究所 | 制备埋嵌硅纳米晶的高介电常数栅介质的方法 |
CN101924030A (zh) * | 2010-07-20 | 2010-12-22 | 中国科学院上海微系统与信息技术研究所 | 一种改善高阻soi衬底上高介电常数栅介质性能的方法 |
CN101546703B (zh) * | 2008-03-26 | 2011-02-02 | 中国科学院微电子研究所 | 一种制备硅纳米晶超晶格结构的方法 |
CN101713061B (zh) * | 2008-10-07 | 2011-12-14 | 四川欧瑞特光电科技有限公司 | 电子束制备HfO2/SiO2多层反射膜的方法 |
CN102044442B (zh) * | 2009-10-14 | 2012-09-05 | 中国科学院微电子研究所 | 一种改善高介电常数栅介质界面特性的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3863391B2 (ja) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
JP2003008004A (ja) * | 2001-06-22 | 2003-01-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6534326B1 (en) * | 2002-03-13 | 2003-03-18 | Sharp Laboratories Of America, Inc. | Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films |
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2003
- 2003-12-19 CN CNB2003101226098A patent/CN1300855C/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100576455C (zh) * | 2007-12-05 | 2009-12-30 | 中国科学院微电子研究所 | 制备埋嵌硅纳米晶的高介电常数栅介质的方法 |
CN101546703B (zh) * | 2008-03-26 | 2011-02-02 | 中国科学院微电子研究所 | 一种制备硅纳米晶超晶格结构的方法 |
CN101713061B (zh) * | 2008-10-07 | 2011-12-14 | 四川欧瑞特光电科技有限公司 | 电子束制备HfO2/SiO2多层反射膜的方法 |
CN102044442B (zh) * | 2009-10-14 | 2012-09-05 | 中国科学院微电子研究所 | 一种改善高介电常数栅介质界面特性的方法 |
CN101924030A (zh) * | 2010-07-20 | 2010-12-22 | 中国科学院上海微系统与信息技术研究所 | 一种改善高阻soi衬底上高介电常数栅介质性能的方法 |
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CN1300855C (zh) | 2007-02-14 |
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Address after: 201821 Shanghai, Jiading District Pratt & Whitney Road, No. 200 Patentee after: Shanghai Simgui Technology Co., Ltd. Patentee after: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Address before: 201821 Shanghai, Jiading District Pratt & Whitney Road, No. 200 Patentee before: Shanghai Xin'ao Science and Technology Co., Ltd. Patentee before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
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Granted publication date: 20070214 Termination date: 20121219 |