CN100576455C - 制备埋嵌硅纳米晶的高介电常数栅介质的方法 - Google Patents
制备埋嵌硅纳米晶的高介电常数栅介质的方法 Download PDFInfo
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- CN100576455C CN100576455C CN200710178775A CN200710178775A CN100576455C CN 100576455 C CN100576455 C CN 100576455C CN 200710178775 A CN200710178775 A CN 200710178775A CN 200710178775 A CN200710178775 A CN 200710178775A CN 100576455 C CN100576455 C CN 100576455C
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- 238000000034 method Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 32
- 239000010703 silicon Substances 0.000 title claims abstract description 32
- 239000002159 nanocrystal Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 10
- 230000005641 tunneling Effects 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 230000015654 memory Effects 0.000 abstract description 5
- 239000002096 quantum dot Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 6
- 238000004382 potting Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
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CN200710178775A CN100576455C (zh) | 2007-12-05 | 2007-12-05 | 制备埋嵌硅纳米晶的高介电常数栅介质的方法 |
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CN200710178775A CN100576455C (zh) | 2007-12-05 | 2007-12-05 | 制备埋嵌硅纳米晶的高介电常数栅介质的方法 |
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CN101452844A CN101452844A (zh) | 2009-06-10 |
CN100576455C true CN100576455C (zh) | 2009-12-30 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1431714A (zh) * | 2003-01-24 | 2003-07-23 | 苏州固锝电子股份有限公司 | 半导体器件及其制造方法 |
CN1500902A (zh) * | 2002-11-15 | 2004-06-02 | 浙江大学 | 立方相、宽禁带MgZnO晶体薄膜的低温制备技术 |
CN1553482A (zh) * | 2003-12-19 | 2004-12-08 | 上海新傲科技有限公司 | 绝缘体上硅的衬底上混合结构栅介质材料的制备方法 |
US20050282327A1 (en) * | 2004-04-29 | 2005-12-22 | Micron Technology, Inc. | Flash memory device having a graded composition, high dielectric constant gate insulator |
US20060084214A1 (en) * | 2001-11-09 | 2006-04-20 | Micron Technology, Inc. | Scalable gate and storage dielectric |
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2007
- 2007-12-05 CN CN200710178775A patent/CN100576455C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060084214A1 (en) * | 2001-11-09 | 2006-04-20 | Micron Technology, Inc. | Scalable gate and storage dielectric |
CN1500902A (zh) * | 2002-11-15 | 2004-06-02 | 浙江大学 | 立方相、宽禁带MgZnO晶体薄膜的低温制备技术 |
CN1431714A (zh) * | 2003-01-24 | 2003-07-23 | 苏州固锝电子股份有限公司 | 半导体器件及其制造方法 |
CN1553482A (zh) * | 2003-12-19 | 2004-12-08 | 上海新傲科技有限公司 | 绝缘体上硅的衬底上混合结构栅介质材料的制备方法 |
US20050282327A1 (en) * | 2004-04-29 | 2005-12-22 | Micron Technology, Inc. | Flash memory device having a graded composition, high dielectric constant gate insulator |
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