CN1543048A - 微型机电器件的电荷控制 - Google Patents
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Abstract
本发明提供一种微型机电系统(30),它包括具有可变电容器(46)的微型机电系统(MEMS)器件(34)和开关电路(40),所述可变电容器(46)由被可变间隙距离48分隔的可移动的第一导电板(42)和固定的第二导电板(44)形成。开关电路配置成接收具有所选电压电平的参考电压并配置成对启动信号作出响应,所述启动信号的持续时间至少等于MEMS器件的电时间常数但比MEMS器件的机械时间常数要短,在所述持续时间内将所选电压电平加到第一和第二导电板上,使具有所需数量的存储电荷累积到可变电容器上,其中,可变间隙距离随存储电荷数量而变。
Description
相关申请的交叉引用
本专利申请与同时提交的、题目为“光学干扰显示器件(OpticalInterference Display Device)”的美国专利申请号“未指定”(Attorney Docket No.10016895-1)有关,所述专利申请已作为参考资料包括在本文内。
技术领域
本发明涉及微型机电器件领域。更具体地说,本发明涉及微型机电器件的电荷控制。
背景技术
微型机电系统(MEMS)是利用薄膜技术研发的系统并且既包括电的又包括微型机械的元件。MEMS器件被用在各种应用中,例如光学显示系统、压力传感器、流量传感器和电荷控制致动器。MEMS器件利用静电力或能量来移动或监控能存储电荷的微型机械电极的运动。在一种类型的MEMS器件中,为了获得所需的结果,用使静电力和机械回复力平衡的方法来控制电极之间的间隙距离。数字MEMS器件使用两个间隙距离,而模拟MEMS器件使用多个间隙距离。
已利用许多不同的方法来研发MEMS器件。一种方法是,将一种可变形的膜片设置在电极上并以静电方式固定到电极上。其它方法利用形成顶部导电层的硅或铝的片或条。在光学应用时,导电层有反射性,并利用静电力使之变形,以便将入射到导电层上的光散射。
控制间隙距离的一种方法是在电极上加连续控制电压,其中,使控制电压增加以减小间隙距离,反之亦然。但这种方法会受到静电不稳定性的影响,而大大减小了能有效控制间隙距离的可用工作范围。这是因为电极形成一个可变电容器,当间隙距离减小时其电容增加。当间隙距离降到某一阈值,通常大约为初始间隙距离的三分之二时,电极之间的静电吸引力克服了机械回复力,导致电极“快速闭合”在一起或导致机械制动。这是因为在距离小于最低阈值时,电容增加到了一定的程度,多余的电荷就被吸引到电极上,结果静电吸引力增加-称为“电荷失控(逸出)”现象。
控制电压和间隙距离之间这种非线性关系将电极运动的可控制范围限制在仅为初始间隙距离的大约三分之一,从而限制了MEMS器件的可能利用。例如,在光学显示系统中,基于干涉或衍射的光调制器MEMS器件最好有较大的间隙距离控制范围,以便控制较大光学范围的由光MEMS器件散射的可见光。
发明内容
本发明的一个方面提供一种电荷控制电路,用于控制具有可变电容器的微型机电系统(MEMS)器件,所述可变电容器由被可变间隙距离分隔开的第一导电板和第二导电板形成。电荷控制电路包括开关电路,所述开关电路配置成接收具有所选电压电平的参考电压并配置成对其持续时间至少等于MEMS器件的电时间常数但比MEMS器件的机械时间常数短的启动信号作出响应而在所述持续时间内将所选电压电平加到第一和第二导电板上,从而使具有所需数量的存储电荷累积到可变电容器上,其中,可变间隙距离随所述存储电荷数量而变。
附图说明
图1是说明根据本发明的微型机电系统的示范实施例的示意图。
图2是说明微型机电器件的示范实施例的示意图。
图3是说明电荷控制电路的示范实施例的示意图。
图4是说明根据本发明的微型机电系统的示范实施例的示意图。
具体实施方式
在以下对优选实施例的详细说明中,要参阅构成本发明一部分的附图,附图中用图示的方法示出了可以实施本发明的具体实施例。应理解可以采用其它实施例,并且可以进行结构和逻辑的改变而不背离本发明的范围。所以,以下的详细说明不应理解为限制性的,本发明的范围由所附权利要求书限定。
图1是说明根据本发明的微型机电系统30的示范实施例的示意图。微型机电系统30包括电荷控制电路32和微型机电器件34。电荷控制电路32还包括可变电源36、控制器38和开关电路40。在示范实施例中,微型机电器件34还包括第一导电板42和第二导电板44,二者形成可变电容器46,其可变间隙距离为48,其中,所述可变间隙距离48随可变电容器46上存储电荷数量而变。在一个实施例中,第一导电板42可移动,而第二导电板44固定到衬底50上。
电荷控制电路32配置成在预定的持续时间内将可变电源36提供的具有所选电压电平的参考电压加到第一和第二导电板42和44上,使具有所需数量的存储电荷累积到可变电容器46上,从而控制微型机电器件34。通过在第一和第二导电板42和44上施加精确的参考电压,就可在很宽的间隙距离范围内控制存储在可变电容器46上的电荷(因而控制可变间隙48)。
在示范实施例中,可变电源36是可变电压源,所述可变电压源配置成经由路径52接收来自控制器38的电压选择信号并将具有根据所述电压选择信号所选的电压电平的参考电压经由路径54提供给开关电路40,并且作为响应,在一定持续时间内将所选电压电平经由路径60加到微型机电器件34上,从而使具有所需数量的存储电荷累积到可变电容器46上。在一个实施例中,开关电路40配置成经由路径58接收来自控制器38的清除信号,并且相应地配置成去除可变电容器46上可能的存储电荷,从而使可变电容器46在加上具有所选电压电平之前处于已知的电荷电平。
图2是说明微型机电器件70的示范实施例的示意图。在所述示范实施例中,微型机电器件70至少部分显示可显示图像的一个像素。器件70包括上反射器72和下反射器74以及挠性件80和弹簧件82。反射器72和74形成光学谐振腔76,所述光学谐振腔具有可变间隙距离,即,间隙距离78。上反射器72在一个实施例中是半透明或半反射的。下反射器74在一个实施例中是高度反射或全反射的。在其它实施例中,上反射器72是高度反射或全反射的而下反射器74是半透明或半反射的。在各种实施例中,弹簧件82可以是具有线性或非线性弹簧功能的任何合适的柔性材料,例如聚合物。
在示范实施例中,光学谐振腔76在一定的强度的条件下通过光学干涉而可变地选择可见光波长。根据微型机电器件70的所需配置,光学谐振腔76在所述强度条件下可以或者反射或者透射所述波长。也就是说,空腔76在性质上可以是反射的或透射的。光学谐振腔76不产生光,因此器件70依靠环境光或由微型机电器件70提供的被空腔76反射或透射的光。光学谐振腔76所选的可见光波长以及光学谐振腔76所选的所述可见光波长的强度,均取决于空腔76的间隙距离78。也就是说,通过控制光学谐振腔76的间隙距离78,就可将光学谐振腔76调谐到所需强度下的所需波长。
在示范实施例中,当有适当数量的电荷已存储在反射器72和74上时,挠性件80和弹簧件82可允许光学谐振腔76的间隙距离改变,以便选择所需强度下的所需波长。此电荷及相应电压按以下公式1确定,它是作为平行板电容的两块板的反射器72和74之间的吸引力,不考虑边缘电场:
公式I:
式中ε0是自由空间的介电常数;
V是反射器72和74上的电压;
A是反射器72和74各自的面积;以及
D是间隙距离78。
这样,在70微米平方的像素上1伏的电位,在间隙距离78为0.25微米时,产生的静电力为7×10-7牛顿(N)。
因此,对应于反射器72和74之间小电压的电荷数量就可提供足够的力来移动上反射器72并使之免受重力和冲击的影响。存储在反射器72和74中的静电电荷不需附加力就足以把上反射器72保持在适当的位置。在各种实施例中,电荷泄漏可能要求不时使电荷得到补充。
在示范实施例中,公式I所定义的力按照以下公式II由弹簧件82提供的线性弹簧力平衡:
公式II:
F=k(d0-d)
式中k为线性弹簧常数;以及
d0为间隙距离78的初始值。
如在本申请的背景一节所述,公式I和II的力处于稳定平衡状态的范围发生在(d0-d)在零和d0/3之间时。当(d0-d)>d0/3时,公式(1)的静电吸引力克服了公式II的弹簧力,以致反射器74快速闭合到反射器72上,这是不希望有的。这种情况的发生是因为当反射器74超过d0/3位置时,由于电容增加,过多的电荷被吸引到反射器72和74上,这样又增加了公式I的反射器72和74之间的吸引力,导致反射器74被拉向反射器72。
但是,可以代之以把公式I的反射器72和74之间的吸引力按以下公式III写为电荷的函数:
公式III:
式中Q为电容上的电荷。
将力F作为电荷Q的函数,而不是距离d的函数,就可看出:通过控制反射器72和74上的电荷量就可在整个间隙距离上有效地控制反射器72的位置。
而且,微型静电器件70具有机械时间常数,这会延迟由可变电容器上电荷Q的变化产生的反射器72的运动。除了别的以外,机械时间常数可以由弹簧件82所用的材料以及由微型静电器件工作的环境所控制。例如,微型静电器件70的机械时间常数在工作在空气环境中时具有一个数值,而工作在氦气环境中时具有另一数值。
电荷控制电路32利用上述每个特性在基本上整个范围内控制间隙距离。通过根据启动信号的持续时间在微型机电器件70上加可选择的控制电压(其中所述持续时间小于器件70的机械时间常数),器件70的可变电容器在施加参考电压的持续时间期间看起来是“固定”的。于是,由于施加所选参考电压而累积在反射器72和74上的所需电荷可按以下公式IV确定:
公式IV:
Q=CINT*VREF
式中VREF是所选参考电压,以及
CINT是微型机电器件70的初始电容。
使启动信号的持续时间(即电时间常数)小于机械时间常数,在特定持续时间内将参考电压加到微型机电器件70上以提供所需的电荷,然后去除参考电压。一旦参考电压被去除,微型机电器件70就是浮动的(即,三态的),这样就可避免附加电荷的累积并可有效地控制间隙距离,其控制的范围比之微型机电器件70的直接电压控制有所增加。
虽然以上各段的说明是针对理想的平行板电容和理想的弹簧回复力,本专业的技术人员应理解所述原理可以适用于其它微型机电器件,例如基于干涉的或基于衍射的显示器件、平行板致动器、非线性弹簧以及其它类型的电容器。在显示装置的情况下,当可用范围增加时,可以实现更多的色彩、饱和度和强度。
在一个实施例中,微型机电器件70是平行板致动器70。平行板致动器70包括弹簧件82中的挠性件80。弹簧件82适合于支持第一板72并提供回复力以使第一板72和第二板74分隔开。挠性件80附着到弹簧件82上并适合于支持第二板74。弹簧件82和挠性件80使第一板72相对于第二板74在偏距78或间隙距离78下保持基本上平行的取向。
在一个实施例中,微型机电器件70是无源像素机构70。像素机构70包括静电可调的上反射器72和下反射器74,二者配置成形成光学谐振腔76。电荷控制电路32配置成将具有所需数量的电荷存储在上反射器72和下反射器74上来选择无源像素机构70的可见光波长,从而控制间隙距离78。
图3是根据本发明的开关电路40的一个实施例90的示意图。电荷控制电路32包括第一开关91和第二开关93。在一个实施例中,第一开关91是P-沟道金属氧化物半导体(PMOS)器件,它具有栅极94、源极96和漏极98。在一个实施例中,第二开关92是N-沟道金属氧化物半导体(PMOS)器件,它具有栅极104,漏极106和源极108。
第一开关91在源极96经由路径54接收所选参考电压(VREF),在栅极94经由路径56接收启动信号。漏极98经由路径60连接到微型机电器件34的第一导电板42。第二开关93连接到微型机电器件34的两端,其漏极106连接到第一导电板42、源极108通过地线连接到第二导电板44。第二开关93在栅极104经由路径58接收清除信号。
开关电路40按下述方式工作,使具有所需数量的电荷存储在第一和第二导电板42和44上。起初,启动信号为“高”电平,清除信号为“低”电平,参考电压为所选电压电平。然后清除信号从“低”电平变为“高”电平,使第二开关93导通,第一导电板42接地,从而去除掉可能存储在可变电容器46上的任何电荷。然后所述信号又回到“低”电平,使第二开关93再次断开。
启动信号此时从“高”电平变为“低”电平,使第一开关91导通,使参考电压加到可变电容器46上并使所需电荷累积到第一和第二导电板42和44上,从而将间隙距离48设定到所需距离。启动信号保持在“低”电平预定的持续时间,再回到“高”电平,使第一开关91再次断开,也使参考电压从微型机电器件34上断开。此时,微型机电器件处于三态(即,被隔离),电荷不再能流动。预定的持续时间短于微型机电器件34的机械时间常数,结果可变电容器46在预定的持续时间内看起来是基本上“固定”的,所以所存储的电荷可以用公式IV计算。这样,在一个实施例中,预定的持续时间是一个固定数值,而参考电压值可改变以控制存储在可变电容器46上电荷的多少。
在一个实施例中,开关电路40不包括第二开关93,也不接收清除信号来先从可变电容器46上去除任何存储的电荷再将可变电容器46充电到所需数量。这样,不必每次改变可变间隙距离时都从零值开始充电可变电容器46,而是根据需要改变参考电压,从一个间隙距离转换到另一间隙距离。为从大间隙距离转换到小间隙距离,提高参考电压,以便把电荷加到可变电容器46上。为从小间隙距离转换到大间隙距离,降低参考电压,以便从可变电容器46去除电荷。
图4是说明根据本发明的微型机电系统120的示范实施例的方框图。微型机电系统120包括微型机电(MEM)单元122的M行乘N列的阵列,每个单元122包括微型机电器件34和开关电路40。虽然为了简单明了而未示出,但每个微型机电器件34还包括第一导电板42和第二导电板44,形成可变电容器46,由可变间隙距离48分隔开。
每个开关电路40配置成控制与微型机电器件34相关联的可变电容器46上存储电荷的数量,从而控制关联的可变间隙距离48。阵列中M行的每一行接收单独的清除信号124和启动信号126,总计M个清除信号和M个启动信号,给定行的所有开关电路40接收相同的清除和启动信号。阵列中N列的每一列接收单独的参考电压(VREF)128,总计N个参考电压信号。
为了将所需的电荷存储(即“写入”)到微型机电单元1 22中给定行的每个微型机电器件32上,把具有所选值的参考电压提供给N列的每一列,N个参考电压信号中的每个信号可能具有不同的所选值。然后“脉冲”式加给定行的清除信号,使给定行的每个开关电路40从其关联的微型给定器件34上去除,或清除,任何可能存储的电荷。然后“脉冲”式施加给定行的启动信号,使给定行的每个开关电路40在预定的持续时间内将其关联的参考电压加到关联的微型机电单元上。结果,基于所加参考电压值的所需数量的存储电荷被存储在关联的可变电容器上,以便根据存储电荷的所需数量设定可变间隙距离。对阵列的每一行重复进行所述过程,以将所需电荷“写入”阵列中每个微型机电单元。
虽然为了说明优选实施例,在本文中说明并图示了一些具体实施例,但本专业的技术人员应理解,有各种各样的替代的和/或等效的实施方案可以用来代替所示和说明的具体实施例而不会背离本发明的范围。具有化学、机械、机电、电气和电脑等技术的人很易理解本发明可以用许多不同的实施例来实现。本申请应理解为覆盖上述优选实施例的任何修改和变动。所以,应明确说明本发明仅由所附权利要求书及其等效物所限制。
Claims (15)
1.一种微型机电系统(30),它包括:
具有可变电容器(46)的微型机电系统(微型机电系统)器件(34),所述可变电容器(46)由以可变间隙距离48分隔开的可移动的第一导电板(42)和固定的第二导电板(44)形成;以及
开关电路40,它配置成接收具有所选电压电平的参考电压并配置成对启动信号作出响应,所述启动信号的持续时间至少等于微型机电系统器件的电时间常数但比微型机电系统器件的机械时间常数短,在所述持续时间内将所选电压电平加到所述第一和第二导电板上,使具有所需数量的存储电荷累积到所述可变电容器上,其中,所述可变间隙距离随所述存储电荷数量而变。
2.如权利要求1所述的微型机电系统,其特点在于:所述微型机电系统器件和开关电路一起形成微型机电单元。
3.如权利要求2所述的微型机电系统,其特点在于包括:
微型机电单元(122)的M行乘N列的阵列(120)。
4.如权利要求3所述的微型机电系统,其特点在于:所述M行中的每一行接收单独的启动信号(126)且给定行的全部N个开关电路接收同一个启动信号,以及所述N列中的每一列接收单独的参考电压(128)且给定列的全部M个开关电路接收同一参考电压,其中,每个单独的参考电压可具有不同的所选电压电平。
5.如权利要求3所述的微型机电系统,其特点在于还包括:
可变电源,它配置成向所述阵列的N列提供所述参考电压;以及
控制器,它配置成向所述阵列的M行提供所述启动信号并控制由所述可变电源提供给所述阵列的所述N列的所述参考电压电平。
6.如权利要求3所述的微型机电系统,其特点在于:每个开关电路还配置成对清除信号作出响应而释放所述可变电容器上的存储电荷。
7.如权利要求6所述的微型机电系统,其特点在于:所述M行的每一行接收单独的清除信号(124)而给定行的全部N个开关电路接收同一个清除信号。
8.如权利要求6所述的微型机电系统,其特点在于还包括:
可变电源,它配置成向所述阵列的N列提供所述参考电压;以及
控制器,它配置成向所述阵列的M行提供所述启动信号和清除信号并控制由所述可变电源提供给所述阵列的所述N列的所述参考电压电平。
9.一种显示器件,它包括:
无源像素机构(70),所述无源像素机构包括:
第一反射器(72)和第二(74)反射器,它们形成可变电容器并由可变间隙距离(78)分隔开,以便形成光学谐振腔(76);以及
开关电路,它配置成接收具有所选电压电平的参考电压并配置成对启动信号作出响应,所述启动信号的持续时间至少等于所述无源像素机构的电时间常数但比所述无源像素机构的机械时间常数要短,在所述持续时间内将所选电压电平加到所述第一和第二反射器上,使具有所需数量的存储电荷累积到所述可变电容器上,其中,所述光学谐振腔的所述可变间隙距离随所述存储电荷数量而变。
10.如权利要求1和9所述的开关电路,其特点在于每个开关电路还包括:
第一开关,它连接到所述微型机电器件上并配置成对所述启动信号作出响应而在所述启动信号的持续时间内向所述微型机电器件提供所述参考电压;以及
第二开关,它连接到所述第一和第二导电板上并配置成对清除信号作出响应而从所述可变电容器上释放所述存储电荷。
11.如权利要求10所述的开关电路,其特点在于所述第一开关包括:
p-沟道金属氧化物半导体器件(91),其源极(96)配置成接收所述参考电压、栅极(94)配置成接收所述启动信号、而漏极(98)配置成根据所述启动信号向所述微型机电器件提供所述参考电压。
12.如权利要求10所述的开关电路,其特点在于所述第二开关包括:
n-沟道金属氧化物半导体(NMOS)器件(93),其栅极(104)配置成接收所述清除信号、而漏极(106)和源极(108)连接到所述第一和第二导电板上。
13.如权利要求10所述的开关电路,其特点在于权利要求1的所述电荷控制电路还包括:
可变电源(36),它配置成提供所选电压电平的所述参考电压;以及
控制器(38),它配置成提供所述启动信号和所述清除信号并控制由所述可变电源提供的所述参考电压的所选电压电平。
14.一种控制具有形成可变间隙距离的可变电容器的微型机电系统器件的方法,所述电荷控制方法包括:
在一定持续时间内将具有所选电压电平的参考电压加到所述微型机电系统器件两端,所述持续时间至少等于所述微型机电系统器件的电时间常数但比所述微型机电系统器件的机械时间常数短,使具有所需数量的存储电荷累积到所述可变电容器上,其中,所述可变间隙距离随所述存储电荷数量而变。
15.如权利要求14所述的方法,其特征在于还包括:
在所述微型机电系统器件上施加所述参考电压之前去除所述可变电容器上的存储电荷。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100509863C (zh) * | 2005-01-05 | 2009-07-08 | 财团法人工业技术研究院 | 一种自由基聚合反应方法及所得的窄分子量分布聚合物 |
CN1976196B (zh) * | 2005-11-30 | 2011-06-29 | Eta瑞士钟表制造股份有限公司 | 用于静电致动器的调节低功率控制系统 |
CN101682315B (zh) * | 2007-06-13 | 2012-08-29 | Nxp股份有限公司 | 用于可调mems电容器的控制器 |
CN103733113A (zh) * | 2011-07-22 | 2014-04-16 | 高通Mems科技公司 | 用于使用像素装置电容的可变性对有源矩阵显示器的电压减小的方法及装置 |
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Families Citing this family (196)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7550794B2 (en) * | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
WO1999052006A2 (en) | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7532377B2 (en) * | 1998-04-08 | 2009-05-12 | Idc, Llc | Movable micro-electromechanical device |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
GB0123521D0 (en) * | 2001-10-01 | 2001-11-21 | Gill Michael J | Electrical apparatus |
US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US7788397B1 (en) * | 2002-07-23 | 2010-08-31 | Richard Douglas Schultz | Method for mitigating adverse processor loading in a personal computer implementation of a wireless local area network adapter |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
US7370185B2 (en) * | 2003-04-30 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers |
TW594360B (en) * | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
US6829132B2 (en) * | 2003-04-30 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Charge control of micro-electromechanical device |
US7218499B2 (en) * | 2003-05-14 | 2007-05-15 | Hewlett-Packard Development Company, L.P. | Charge control circuit |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7388247B1 (en) | 2003-05-28 | 2008-06-17 | The United States Of America As Represented By The Secretary Of The Navy | High precision microelectromechanical capacitor with programmable voltage source |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
TW200506479A (en) * | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI231865B (en) * | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI232333B (en) * | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
US20070009899A1 (en) * | 2003-10-02 | 2007-01-11 | Mounts William M | Nucleic acid arrays for detecting gene expression in animal models of inflammatory diseases |
KR100537515B1 (ko) * | 2003-11-22 | 2005-12-19 | 삼성전자주식회사 | 동적 특성이 향상된 액츄에이터와 이를 구비한 디스크드라이브 |
US7142346B2 (en) * | 2003-12-09 | 2006-11-28 | Idc, Llc | System and method for addressing a MEMS display |
US7161728B2 (en) * | 2003-12-09 | 2007-01-09 | Idc, Llc | Area array modulation and lead reduction in interferometric modulators |
US7532194B2 (en) * | 2004-02-03 | 2009-05-12 | Idc, Llc | Driver voltage adjuster |
US7656573B2 (en) * | 2004-02-28 | 2010-02-02 | Hewlett-Packard Development Company, L.P. | Method and apparatus for controlling a gap between conductors in an electro-mechanical device |
US7706050B2 (en) | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7060895B2 (en) * | 2004-05-04 | 2006-06-13 | Idc, Llc | Modifying the electro-mechanical behavior of devices |
US7164520B2 (en) | 2004-05-12 | 2007-01-16 | Idc, Llc | Packaging for an interferometric modulator |
US7256922B2 (en) * | 2004-07-02 | 2007-08-14 | Idc, Llc | Interferometric modulators with thin film transistors |
TWI233916B (en) * | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
EP1779173A1 (en) * | 2004-07-29 | 2007-05-02 | Idc, Llc | System and method for micro-electromechanical operating of an interferometric modulator |
US7515147B2 (en) * | 2004-08-27 | 2009-04-07 | Idc, Llc | Staggered column drive circuit systems and methods |
US7560299B2 (en) * | 2004-08-27 | 2009-07-14 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7889163B2 (en) * | 2004-08-27 | 2011-02-15 | Qualcomm Mems Technologies, Inc. | Drive method for MEMS devices |
US7602375B2 (en) * | 2004-09-27 | 2009-10-13 | Idc, Llc | Method and system for writing data to MEMS display elements |
US7535466B2 (en) * | 2004-09-27 | 2009-05-19 | Idc, Llc | System with server based control of client device display features |
US7679627B2 (en) | 2004-09-27 | 2010-03-16 | Qualcomm Mems Technologies, Inc. | Controller and driver features for bi-stable display |
TW200628833A (en) * | 2004-09-27 | 2006-08-16 | Idc Llc | Method and device for multistate interferometric light modulation |
US7420728B2 (en) * | 2004-09-27 | 2008-09-02 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
US20060077126A1 (en) * | 2004-09-27 | 2006-04-13 | Manish Kothari | Apparatus and method for arranging devices into an interconnected array |
US7492502B2 (en) * | 2004-09-27 | 2009-02-17 | Idc, Llc | Method of fabricating a free-standing microstructure |
US7359066B2 (en) * | 2004-09-27 | 2008-04-15 | Idc, Llc | Electro-optical measurement of hysteresis in interferometric modulators |
US8878825B2 (en) | 2004-09-27 | 2014-11-04 | Qualcomm Mems Technologies, Inc. | System and method for providing a variable refresh rate of an interferometric modulator display |
US7405861B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | Method and device for protecting interferometric modulators from electrostatic discharge |
US7626581B2 (en) * | 2004-09-27 | 2009-12-01 | Idc, Llc | Device and method for display memory using manipulation of mechanical response |
US7368803B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | System and method for protecting microelectromechanical systems array using back-plate with non-flat portion |
US7532195B2 (en) * | 2004-09-27 | 2009-05-12 | Idc, Llc | Method and system for reducing power consumption in a display |
US7583429B2 (en) | 2004-09-27 | 2009-09-01 | Idc, Llc | Ornamental display device |
US7372613B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7701631B2 (en) | 2004-09-27 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Device having patterned spacers for backplates and method of making the same |
US7916103B2 (en) | 2004-09-27 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | System and method for display device with end-of-life phenomena |
US7369296B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator |
US7424198B2 (en) * | 2004-09-27 | 2008-09-09 | Idc, Llc | Method and device for packaging a substrate |
US20060066596A1 (en) * | 2004-09-27 | 2006-03-30 | Sampsell Jeffrey B | System and method of transmitting video data |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
US7630119B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US20060076634A1 (en) | 2004-09-27 | 2006-04-13 | Lauren Palmateer | Method and system for packaging MEMS devices with incorporated getter |
US20060176241A1 (en) * | 2004-09-27 | 2006-08-10 | Sampsell Jeffrey B | System and method of transmitting video data |
US7813026B2 (en) | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7345805B2 (en) * | 2004-09-27 | 2008-03-18 | Idc, Llc | Interferometric modulator array with integrated MEMS electrical switches |
US7675669B2 (en) | 2004-09-27 | 2010-03-09 | Qualcomm Mems Technologies, Inc. | Method and system for driving interferometric modulators |
US7349136B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and device for a display having transparent components integrated therein |
US7304784B2 (en) * | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7527995B2 (en) * | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7920135B2 (en) * | 2004-09-27 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | Method and system for driving a bi-stable display |
US7653371B2 (en) * | 2004-09-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
US7259449B2 (en) * | 2004-09-27 | 2007-08-21 | Idc, Llc | Method and system for sealing a substrate |
US7808703B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | System and method for implementation of interferometric modulator displays |
US7355780B2 (en) | 2004-09-27 | 2008-04-08 | Idc, Llc | System and method of illuminating interferometric modulators using backlighting |
US7545550B2 (en) * | 2004-09-27 | 2009-06-09 | Idc, Llc | Systems and methods of actuating MEMS display elements |
US7564612B2 (en) * | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7136213B2 (en) * | 2004-09-27 | 2006-11-14 | Idc, Llc | Interferometric modulators having charge persistence |
US8310441B2 (en) | 2004-09-27 | 2012-11-13 | Qualcomm Mems Technologies, Inc. | Method and system for writing data to MEMS display elements |
US7415186B2 (en) * | 2004-09-27 | 2008-08-19 | Idc, Llc | Methods for visually inspecting interferometric modulators for defects |
US7417783B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Mirror and mirror layer for optical modulator and method |
US7719500B2 (en) | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US7417735B2 (en) * | 2004-09-27 | 2008-08-26 | Idc, Llc | Systems and methods for measuring color and contrast in specular reflective devices |
US7684104B2 (en) | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
US8124434B2 (en) | 2004-09-27 | 2012-02-28 | Qualcomm Mems Technologies, Inc. | Method and system for packaging a display |
US7317568B2 (en) | 2004-09-27 | 2008-01-08 | Idc, Llc | System and method of implementation of interferometric modulators for display mirrors |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
US20060065366A1 (en) * | 2004-09-27 | 2006-03-30 | Cummings William J | Portable etch chamber |
US7369294B2 (en) * | 2004-09-27 | 2008-05-06 | Idc, Llc | Ornamental display device |
US7460246B2 (en) * | 2004-09-27 | 2008-12-02 | Idc, Llc | Method and system for sensing light using interferometric elements |
US7299681B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | Method and system for detecting leak in electronic devices |
US7692839B2 (en) | 2004-09-27 | 2010-04-06 | Qualcomm Mems Technologies, Inc. | System and method of providing MEMS device with anti-stiction coating |
US7373026B2 (en) * | 2004-09-27 | 2008-05-13 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7586484B2 (en) * | 2004-09-27 | 2009-09-08 | Idc, Llc | Controller and driver features for bi-stable display |
US7843410B2 (en) | 2004-09-27 | 2010-11-30 | Qualcomm Mems Technologies, Inc. | Method and device for electrically programmable display |
US7130104B2 (en) * | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7302157B2 (en) * | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7343080B2 (en) * | 2004-09-27 | 2008-03-11 | Idc, Llc | System and method of testing humidity in a sealed MEMS device |
US20060066932A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of selective etching using etch stop layer |
US20060066594A1 (en) * | 2004-09-27 | 2006-03-30 | Karen Tyger | Systems and methods for driving a bi-stable display element |
US20060103643A1 (en) * | 2004-09-27 | 2006-05-18 | Mithran Mathew | Measuring and modeling power consumption in displays |
US7446927B2 (en) * | 2004-09-27 | 2008-11-04 | Idc, Llc | MEMS switch with set and latch electrodes |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7554714B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
US7321456B2 (en) * | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US7724993B2 (en) | 2004-09-27 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
US7710629B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | System and method for display device with reinforcing substance |
US7420725B2 (en) * | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US20060067650A1 (en) * | 2004-09-27 | 2006-03-30 | Clarence Chui | Method of making a reflective display device using thin film transistor production techniques |
US7657242B2 (en) * | 2004-09-27 | 2010-02-02 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
US7289256B2 (en) * | 2004-09-27 | 2007-10-30 | Idc, Llc | Electrical characterization of interferometric modulators |
TW200628877A (en) * | 2005-02-04 | 2006-08-16 | Prime View Int Co Ltd | Method of manufacturing optical interference type color display |
KR20080027236A (ko) | 2005-05-05 | 2008-03-26 | 콸콤 인코포레이티드 | 다이나믹 드라이버 ic 및 디스플레이 패널 구성 |
US7948457B2 (en) | 2005-05-05 | 2011-05-24 | Qualcomm Mems Technologies, Inc. | Systems and methods of actuating MEMS display elements |
US7920136B2 (en) | 2005-05-05 | 2011-04-05 | Qualcomm Mems Technologies, Inc. | System and method of driving a MEMS display device |
US20060277486A1 (en) * | 2005-06-02 | 2006-12-07 | Skinner David N | File or user interface element marking system |
EP1910216A1 (en) * | 2005-07-22 | 2008-04-16 | QUALCOMM Incorporated | Support structure for mems device and methods therefor |
US7355779B2 (en) * | 2005-09-02 | 2008-04-08 | Idc, Llc | Method and system for driving MEMS display elements |
US7834829B2 (en) * | 2005-10-03 | 2010-11-16 | Hewlett-Packard Development Company, L.P. | Control circuit for overcoming stiction |
US8027143B2 (en) | 2005-10-14 | 2011-09-27 | Epcos Ag | MEMS tunable device |
GB0521256D0 (en) * | 2005-10-19 | 2005-11-30 | Qinetiq Ltd | Optical modulation |
US20070090732A1 (en) * | 2005-10-25 | 2007-04-26 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
US7566582B2 (en) * | 2005-10-25 | 2009-07-28 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
US7630114B2 (en) * | 2005-10-28 | 2009-12-08 | Idc, Llc | Diffusion barrier layer for MEMS devices |
US8391630B2 (en) | 2005-12-22 | 2013-03-05 | Qualcomm Mems Technologies, Inc. | System and method for power reduction when decompressing video streams for interferometric modulator displays |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7636151B2 (en) * | 2006-01-06 | 2009-12-22 | Qualcomm Mems Technologies, Inc. | System and method for providing residual stress test structures |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7382515B2 (en) * | 2006-01-18 | 2008-06-03 | Qualcomm Mems Technologies, Inc. | Silicon-rich silicon nitrides as etch stops in MEMS manufacture |
US8194056B2 (en) | 2006-02-09 | 2012-06-05 | Qualcomm Mems Technologies Inc. | Method and system for writing data to MEMS display elements |
WO2007095127A1 (en) | 2006-02-10 | 2007-08-23 | Qualcomm Mems Technologies, Inc. | Method and system for updating of displays showing deterministic content |
US7582952B2 (en) * | 2006-02-21 | 2009-09-01 | Qualcomm Mems Technologies, Inc. | Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US7550810B2 (en) * | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
US7903047B2 (en) * | 2006-04-17 | 2011-03-08 | Qualcomm Mems Technologies, Inc. | Mode indicator for interferometric modulator displays |
US7527996B2 (en) * | 2006-04-19 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7417784B2 (en) * | 2006-04-19 | 2008-08-26 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing a porous surface |
US7623287B2 (en) * | 2006-04-19 | 2009-11-24 | Qualcomm Mems Technologies, Inc. | Non-planar surface structures and process for microelectromechanical systems |
US8049713B2 (en) | 2006-04-24 | 2011-11-01 | Qualcomm Mems Technologies, Inc. | Power consumption optimized display update |
US7369292B2 (en) * | 2006-05-03 | 2008-05-06 | Qualcomm Mems Technologies, Inc. | Electrode and interconnect materials for MEMS devices |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7405863B2 (en) * | 2006-06-01 | 2008-07-29 | Qualcomm Mems Technologies, Inc. | Patterning of mechanical layer in MEMS to reduce stresses at supports |
US7702192B2 (en) | 2006-06-21 | 2010-04-20 | Qualcomm Mems Technologies, Inc. | Systems and methods for driving MEMS display |
US7385744B2 (en) * | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7777715B2 (en) | 2006-06-29 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | Passive circuits for de-multiplexing display inputs |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7388704B2 (en) * | 2006-06-30 | 2008-06-17 | Qualcomm Mems Technologies, Inc. | Determination of interferometric modulator mirror curvature and airgap variation using digital photographs |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US7566664B2 (en) * | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
US20080043315A1 (en) * | 2006-08-15 | 2008-02-21 | Cummings William J | High profile contacts for microelectromechanical systems |
WO2008081729A1 (ja) * | 2006-12-22 | 2008-07-10 | Nikon Corporation | レーザ走査共焦点顕微鏡 |
US20080247012A1 (en) * | 2007-04-04 | 2008-10-09 | Wu Kuohua Angus | Variable optical phase modulator |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7595926B2 (en) * | 2007-07-05 | 2009-09-29 | Qualcomm Mems Technologies, Inc. | Integrated IMODS and solar cells on a substrate |
US20090201282A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc | Methods of tuning interferometric modulator displays |
EP2252899A2 (en) * | 2008-02-11 | 2010-11-24 | QUALCOMM MEMS Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
US8115471B2 (en) * | 2008-02-11 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
WO2009102581A1 (en) * | 2008-02-11 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Impedance sensing to determine pixel state in a passively addressed display array |
WO2009102641A1 (en) * | 2008-02-11 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same |
CN101952763B (zh) | 2008-02-14 | 2013-05-29 | 高通Mems科技公司 | 具有电力产生黑色掩模的装置及其制造方法 |
US8094358B2 (en) * | 2008-03-27 | 2012-01-10 | Qualcomm Mems Technologies, Inc. | Dimming mirror |
US7660028B2 (en) * | 2008-03-28 | 2010-02-09 | Qualcomm Mems Technologies, Inc. | Apparatus and method of dual-mode display |
US7787171B2 (en) * | 2008-03-31 | 2010-08-31 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
US8077326B1 (en) | 2008-03-31 | 2011-12-13 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
US7852491B2 (en) | 2008-03-31 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
US7787130B2 (en) | 2008-03-31 | 2010-08-31 | Qualcomm Mems Technologies, Inc. | Human-readable, bi-state environmental sensors based on micro-mechanical membranes |
US7860668B2 (en) * | 2008-06-18 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Pressure measurement using a MEMS device |
US8027800B2 (en) | 2008-06-24 | 2011-09-27 | Qualcomm Mems Technologies, Inc. | Apparatus and method for testing a panel of interferometric modulators |
US20100134195A1 (en) * | 2008-12-03 | 2010-06-03 | Electronics And Telecommunications Research Institute | Capacitor having variable capacitance and digitally controlled oscillator including the same |
US8736590B2 (en) | 2009-03-27 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Low voltage driver scheme for interferometric modulators |
US7990604B2 (en) * | 2009-06-15 | 2011-08-02 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator |
US8711361B2 (en) * | 2009-11-05 | 2014-04-29 | Qualcomm, Incorporated | Methods and devices for detecting and measuring environmental conditions in high performance device packages |
US20110176196A1 (en) * | 2010-01-15 | 2011-07-21 | Qualcomm Mems Technologies, Inc. | Methods and devices for pressure detection |
JP5537180B2 (ja) | 2010-02-16 | 2014-07-02 | 株式会社東芝 | 静電型アクチュエータ装置 |
US20110235156A1 (en) * | 2010-03-26 | 2011-09-29 | Qualcomm Mems Technologies, Inc. | Methods and devices for pressure detection |
WO2011126953A1 (en) | 2010-04-09 | 2011-10-13 | Qualcomm Mems Technologies, Inc. | Mechanical layer of an electromechanical device and methods of forming the same |
US8390916B2 (en) | 2010-06-29 | 2013-03-05 | Qualcomm Mems Technologies, Inc. | System and method for false-color sensing and display |
US8904867B2 (en) | 2010-11-04 | 2014-12-09 | Qualcomm Mems Technologies, Inc. | Display-integrated optical accelerometer |
US8714023B2 (en) | 2011-03-10 | 2014-05-06 | Qualcomm Mems Technologies, Inc. | System and method for detecting surface perturbations |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
KR20130033805A (ko) * | 2011-09-27 | 2013-04-04 | 삼성디스플레이 주식회사 | 표시장치 |
US20130135320A1 (en) * | 2011-11-30 | 2013-05-30 | Qualcomm Mems Technologies, Inc. | Tri-state mems device and drive schemes |
US9305497B2 (en) * | 2012-08-31 | 2016-04-05 | Qualcomm Mems Technologies, Inc. | Systems, devices, and methods for driving an analog interferometric modulator |
WO2016037362A1 (zh) * | 2014-09-12 | 2016-03-17 | 深圳麦克韦尔股份有限公司 | 电子烟及其空气开关装置 |
JP2016058695A (ja) * | 2014-09-12 | 2016-04-21 | 株式会社東芝 | 電子デバイス |
US9898974B2 (en) * | 2015-02-23 | 2018-02-20 | Snaptrack, Inc. | Display drive scheme without reset |
JP2016186598A (ja) * | 2015-03-27 | 2016-10-27 | 新電元工業株式会社 | 制御装置および制御方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4954789A (en) * | 1989-09-28 | 1990-09-04 | Texas Instruments Incorporated | Spatial light modulator |
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
JP3209635B2 (ja) * | 1994-04-04 | 2001-09-17 | シャープ株式会社 | 表示装置 |
US8014059B2 (en) * | 1994-05-05 | 2011-09-06 | Qualcomm Mems Technologies, Inc. | System and method for charge control in a MEMS device |
US5636052A (en) * | 1994-07-29 | 1997-06-03 | Lucent Technologies Inc. | Direct view display based on a micromechanical modulation |
US6148006A (en) * | 1997-11-12 | 2000-11-14 | Nortel Networks Limited | Communication system architecture, exchange having a plurality of broadband modems and method of supporting broadband operation on a one to one basis |
US6496348B2 (en) * | 1998-03-10 | 2002-12-17 | Mcintosh Robert B. | Method to force-balance capacitive transducers |
US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
WO1999052006A2 (en) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
US6088214A (en) * | 1998-06-01 | 2000-07-11 | Motorola, Inc. | Voltage variable capacitor array and method of manufacture thereof |
US6329738B1 (en) * | 1999-03-30 | 2001-12-11 | Massachusetts Institute Of Technology | Precision electrostatic actuation and positioning |
JP3259774B2 (ja) * | 1999-06-09 | 2002-02-25 | 日本電気株式会社 | 画像表示方法および装置 |
JP3461757B2 (ja) * | 1999-06-15 | 2003-10-27 | シャープ株式会社 | 液晶表示装置 |
KR100344790B1 (ko) * | 1999-10-07 | 2002-07-19 | 엘지전자주식회사 | 마이크로 기계구조를 이용한 주파수 가변 초고주파 필터 |
US6140737A (en) * | 1999-10-08 | 2000-10-31 | Lucent Technologies Inc. | Apparatus and method for charge neutral micro-machine control |
US6496351B2 (en) * | 1999-12-15 | 2002-12-17 | Jds Uniphase Inc. | MEMS device members having portions that contact a substrate and associated methods of operating |
US6373682B1 (en) * | 1999-12-15 | 2002-04-16 | Mcnc | Electrostatically controlled variable capacitor |
US6229684B1 (en) * | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
US6339493B1 (en) * | 1999-12-23 | 2002-01-15 | Michael Scalora | Apparatus and method for controlling optics propagation based on a transparent metal stack |
US6355534B1 (en) * | 2000-01-26 | 2002-03-12 | Intel Corporation | Variable tunable range MEMS capacitor |
US6362018B1 (en) * | 2000-02-02 | 2002-03-26 | Motorola, Inc. | Method for fabricating MEMS variable capacitor with stabilized electrostatic drive |
FI20000339A (fi) * | 2000-02-16 | 2001-08-16 | Nokia Mobile Phones Ltd | Mikromekaaninen säädettävä kondensaattori ja integroitu säädettävä resonaattori |
US6697035B2 (en) * | 2000-03-30 | 2004-02-24 | Kabushiki Kaisha Toshiba | Display device and moving-film display device |
US6377438B1 (en) * | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
US6418006B1 (en) * | 2000-12-20 | 2002-07-09 | The Board Of Trustees Of The University Of Illinois | Wide tuning range variable MEMs capacitor |
US6509812B2 (en) * | 2001-03-08 | 2003-01-21 | Hrl Laboratories, Llc | Continuously tunable MEMs-based phase shifter |
US20040212026A1 (en) * | 2002-05-07 | 2004-10-28 | Hewlett-Packard Company | MEMS device having time-varying control |
US7400489B2 (en) * | 2003-04-30 | 2008-07-15 | Hewlett-Packard Development Company, L.P. | System and a method of driving a parallel-plate variable micro-electromechanical capacitor |
US6829132B2 (en) * | 2003-04-30 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Charge control of micro-electromechanical device |
US7218438B2 (en) * | 2003-04-30 | 2007-05-15 | Hewlett-Packard Development Company, L.P. | Optical electronic device with partial reflector layer |
US7072093B2 (en) * | 2003-04-30 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Optical interference pixel display with charge control |
US7218499B2 (en) * | 2003-05-14 | 2007-05-15 | Hewlett-Packard Development Company, L.P. | Charge control circuit |
US6963440B2 (en) * | 2004-02-13 | 2005-11-08 | Hewlett-Packard Development Company, L.P. | System and method for driving a light delivery device |
US8188755B2 (en) * | 2010-01-12 | 2012-05-29 | Maxim Integrated Products, Inc. | Electrostatic MEMS driver with on-chip capacitance measurement for autofocus applications |
-
2003
- 2003-04-30 US US10/428,168 patent/US6829132B2/en not_active Expired - Lifetime
- 2003-10-29 EP EP03024951A patent/EP1473691A3/en not_active Withdrawn
-
2004
- 2004-01-30 CN CNA2004100035774A patent/CN1543048A/zh active Pending
- 2004-04-26 JP JP2004129769A patent/JP2004330412A/ja not_active Ceased
- 2004-07-28 US US10/902,662 patent/US20050001828A1/en not_active Abandoned
- 2004-09-15 US US10/942,664 patent/US7088566B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100509863C (zh) * | 2005-01-05 | 2009-07-08 | 财团法人工业技术研究院 | 一种自由基聚合反应方法及所得的窄分子量分布聚合物 |
CN1976196B (zh) * | 2005-11-30 | 2011-06-29 | Eta瑞士钟表制造股份有限公司 | 用于静电致动器的调节低功率控制系统 |
TWI400872B (zh) * | 2005-11-30 | 2013-07-01 | Eta Sa Mft Horlogere Suisse | 用於靜電致動器、伺服機構及可攜式電子設備的調制低功率控制系統 |
CN101682315B (zh) * | 2007-06-13 | 2012-08-29 | Nxp股份有限公司 | 用于可调mems电容器的控制器 |
US8890543B2 (en) | 2007-06-13 | 2014-11-18 | Nxp B.V. | Tunable MEMS capacitor |
CN103733113A (zh) * | 2011-07-22 | 2014-04-16 | 高通Mems科技公司 | 用于使用像素装置电容的可变性对有源矩阵显示器的电压减小的方法及装置 |
CN103733113B (zh) * | 2011-07-22 | 2016-05-18 | 高通Mems科技公司 | 一种显示装置及更新包含至少一个干涉式调制器的阵列的方法 |
CN110267816A (zh) * | 2017-04-14 | 2019-09-20 | 惠普发展公司,有限责任合伙企业 | 流体管芯 |
US11034147B2 (en) | 2017-04-14 | 2021-06-15 | Hewlett-Packard Development Company, L.P. | Fluidic die |
US11618253B2 (en) | 2017-04-14 | 2023-04-04 | Hewlett-Packard Development Company, L.P. | Fluidic die |
Also Published As
Publication number | Publication date |
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US7088566B2 (en) | 2006-08-08 |
JP2004330412A (ja) | 2004-11-25 |
US20050001828A1 (en) | 2005-01-06 |
US20040218341A1 (en) | 2004-11-04 |
US6829132B2 (en) | 2004-12-07 |
EP1473691A2 (en) | 2004-11-03 |
EP1473691A3 (en) | 2007-08-01 |
US20050029548A1 (en) | 2005-02-10 |
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