US20050001828A1 - Charge control of micro-electromechanical device - Google Patents

Charge control of micro-electromechanical device Download PDF

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Publication number
US20050001828A1
US20050001828A1 US10/902,662 US90266204A US2005001828A1 US 20050001828 A1 US20050001828 A1 US 20050001828A1 US 90266204 A US90266204 A US 90266204A US 2005001828 A1 US2005001828 A1 US 2005001828A1
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Prior art keywords
micro
configured
electromechanical system
reference voltage
electromechanical
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Abandoned
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US10/902,662
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Eric Martin
Mark Hunter
Arthur Piehl
James Przybyla
Matthew Gelhaus
Leslie Szepesi
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Martin Eric T.
Mark Hunter
Arthur Piehl
Przybyla James R.
Matthew Gelhaus
Szepesi Leslie Louis
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Priority to US10/428,168 priority Critical patent/US6829132B2/en
Application filed by Martin Eric T., Mark Hunter, Arthur Piehl, Przybyla James R., Matthew Gelhaus, Szepesi Leslie Louis filed Critical Martin Eric T.
Priority to US10/902,662 priority patent/US20050001828A1/en
Publication of US20050001828A1 publication Critical patent/US20050001828A1/en
Application status is Abandoned legal-status Critical

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B26/00Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating
    • G02B26/001Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating, modulating based on interference in an adjustable optical cavity
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/3466Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on interferometric effect
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels

Abstract

A charge control circuit for controlling a micro-electromechanical system (MEMS) device having variable capacitor formed by first conductive plate and a second conductive plate separated by a variable gap distance. The charge control circuit comprises a switch circuit configured to receive a reference voltage having a selected voltage level and configured to respond to an enable signal having a duration at least as long as an electrical time constant constant of the MEMS device, but shorter than a mechanical time constant of the MEMS device, to apply the selected voltage level across the first and second plates for the duration to thereby cause a stored charge having a desired magnitude to accumulate on the variable capacitor, wherein the variable gap distance is a function of the magnitude of the stored charge.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This patent application is related to U.S. patent application Ser. No. “unassigned” (Attorney Docket No. 10016895-1) filed concurrently herewith and entitled “Optical Interference Display Device,” which is herein incorporated by reference.
  • THE FIELD OF THE INVENTION
  • The present invention relates to the field of micro-electromechanical devices. More particularly, the present invention relates to charge control of a micro-electromechanical device.
  • BACKGROUND OF THE INVENTION
  • Micro-electromechanical systems (MEMS) are systems which are developed using thin film technology and which include both electrical and micro-mechanical components. MEMS devices are used in a variety of applications such as optical display systems, pressure sensors, flow sensors and charge control actuators. MEMS devices use electrostatic force or energy to move or monitor the movement of micro-mechanical electrodes which can store charge. In one type of MEMS device, to achieve a desired result, a gap distance between the electrodes is controlled by balancing an electrostatic force and a mechanical restoring force. Digital MEMS devices use two gap distances, while analog MEMS devices use multiple gap distances.
  • MEMS devices have been developed using a variety of approaches. In one approach, a deformable deflective membrane is positioned over an electrode and is electrostatically attracted to the electrode. Other approaches use flaps or beams of silicon or aluminum which form a top conducting layer. With optical applications, the conducting layer is reflective and is deformed using electrostatic force to scatter light which is incident upon the conducting layer.
  • One approach for controlling the gap distance is to apply a continuous control voltage to the electrodes, wherein the control voltage is increased to decrease the gap distance, and vice-versa. However, this approach suffers from electrostatic instability that greatly reduces a useable operating range over which the gap distance can be effectively controlled. This is because the electrodes form a variable capacitor whose capacitance increases as the gap distance decreases. When the gap distance is reduced to a certain threshold value, usually about two-thirds of an initial gap distance, the electrostatic force of attraction between the electrodes overcomes the mechanical restoring force causing the electrodes to “snap” together or to mechanical stops. This is because at a distance less than the minimum threshold value, the capacitance is increased to a point where excess charge is drawn onto the electrodes resulting in increased electrostatic attraction—a phenomenon known as “charge runaway.”
  • This non-linear relationship between the control voltage and the gap distance limits the controllable range of electrode movement to only about one-third of the initial gap distance, and thus limits the potential utility of the MEMS device. For example, with optical display systems, interference or defraction based light modulator MEMS devices preferably should have a large range of gap distance control in order to control a greater optical range of visible light scattered by the optical MEMS device.
  • SUMMARY OF THE INVENTION
  • One aspect of the present invention provides a charge control circuit for controlling a micro-electromechanical system (MEMS) device having variable capacitor formed by a first conductive plate and a second conductive plate separated by a variable gap distance. The charge control circuit comprises a switch circuit configured to receive a reference voltage having a selected voltage level and configured to respond to an enable signal having a duration at least as long as an electrical time constant constant of the MEMS device, but shorter than a mechanical time constant of the MEMS device, to apply the selected voltage level across the first and second plates for the duration to thereby cause a stored charge having a desired magnitude to accumulate on the variable capacitor, wherein the variable gap distance is a function of the magnitude of the stored charge.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a diagram illustrating an exemplary embodiment of a micro-electromechanical system according to the present invention.
  • FIG. 2 is a diagram illustrating an exemplary embodiment of a micro-electromechanical device.
  • FIG. 3 is a schematic diagram illustrating an exemplary embodiment of a charge control circuit.
  • FIG. 4 is a diagram illustrating an exemplary embodiment of a micro-electromechanical system according to the present invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.
  • FIG. 1 is a diagram illustrating an exemplary embodiment of a micro-electromechanical system 30 according to the present invention. The micro-electromechanical system 30 includes a charge control circuit 32 and a micro-electromechanical device 34. Charge control circuit 32 further includes a variable power supply 36, a controller 38, and a switch circuit 40. In the exemplary embodiment, micro-electromechanical device 34 further includes a first conductive plate 42 and a second conductive plate 44 that form a variable capacitor 46 having a variable gap distance 48, wherein variable gap distance 48 is a function of a magnitude of a stored charge on variable capacitor 46. In one embodiment, first conductive plate 42 is moveable, while second conductive plate 44 is fixed to a substrate 50.
  • Charge control circuit 32 is configured to control micro-electromechanical device 34 by applying a reference voltage having a selected voltage level provided by variable power supply 36 across first and second conductive plates 42 and 44 for a predetermined duration to thereby cause a stored charge having a desired magnitude to accumulate on variable capacitor 46. By application of a precision reference voltage across first and second conductive plates 42 and 44, the charge stored on variable capacitor 46 and thus, variable gap 48, can be controlled over a wide gap distance range.
  • In the exemplary embodiment, variable power supply 36 is a variable voltage source configured to receive a voltage select signal from controller 38 via a path 52 and to provide the reference voltage having a selected voltage level based on the voltage select signal to switch circuit 40 via a path 54. Switch circuit 40 is configured to receive an enable signal having a duration from controller 38 via a path 56 and, in response, to apply for the duration the selected voltage level to micro-electromechanical device 34 via a path 60 to thereby cause a stored charge having a desired magnitude to accumulate on variable capacitor 46. In one embodiment, switch circuit 40 is configured to receive a clear signal from controller 38 via a path 58 and, in response, configured to remove a potential stored charge on variable capacitor 46 to thereby place variable capacitor 46 at a known charge level prior to applying the reference voltage having the selected voltage level.
  • FIG. 2 is a diagram illustrating an exemplary embodiment of a micro-electromechanical device 70. In the exemplary embodiment, micro-electromechanical device 70 displays, at least partially, a pixel of a displayable image. The device 70 includes a top reflector 72 and a bottom reflector 74, as well as a flexure 80 and a spring mechanism 82. A resonant optical cavity 76 is defined by the reflectors 72 and 74, which has a variable gap distance, or gap distance, 78. The top reflector 72 is in one embodiment semi-transparent or semi-reflective. The bottom reflector 74 is in one embodiment highly reflective or completely reflective. In other embodiments, the top reflector 72 is highly reflective or completely reflective and the bottom reflector 74 is semi-transparent or semi-reflective. In various embodiments, spring mechanism 82 can be any suitable flexible material, such as a polymer, that has linear or non-linear spring functionality.
  • In the exemplary embodiment, the optical cavity 76 is variably selective of a visible wavelength at an intensity by optical interference. Depending on the desired configuration of micro-electromechanical device 70, the optical cavity 76 can either reflect or transmit the wavelength at the intensity. That is, the cavity 76 can be reflective or transmissive in nature. No light is generated by optical cavity 76, so that the device 70 relies on ambient light or light provided by micro-electromechanical device 70 that is reflected or transmitted by the cavity 76. The visible wavelength selected by the optical cavity 76, and its intensity selected by the optical cavity 76, are dependent on the gap distance 78 of the cavity 76. That is, the optical cavity 76 can be tuned to a desired wavelength at a desired intensity by controlling its gap distance 78.
  • In the exemplary embodiment, the flexure 80 and the spring mechanism 82 allow the gap distance 78 of the optical cavity 76 to vary when an appropriate amount of charge has been stored on the reflectors 72 and 74, such that a desired wavelength at a desired intensity is selected. This charge, and the corresponding voltage, is determined in accordance with the following Equation I, which is the force of attraction between the reflectors 72 and 74 acting as plates of a parallel plate capacitor, and does not take into account fringing fields: Equation I : F = ɛ 0 V 2 A 2 d 2 ,
    where ε0 is the permittivity of free space;
      • V is the voltage across the reflectors 72 and 74;
      • A is the area of each of the reflectors 72 and 74; and
      • d is the gap distance 78.
  • Thus, a one volt potential across a 70 micron square pixel, with a gap distance 78 of 0.25 microns, yields an electrostatic force of 7×10−7 Newtons (N).
  • Therefore, an amount of charge corresponding to a small voltage between the reflectors 72 and 74 provides sufficient force to move the top reflector 72, and hold it against gravity and shocks. The electrostatic charge stored in the reflectors 72 and 74, is sufficient to hold the top reflector 72 in place without additional power. In various embodiments, charge leakage may require occasional refreshing of the charge.
  • In the exemplary embodiment, the force defined in Equation I is balanced with the linear spring force provided by the spring mechanism 82 according to the following Equation II:
    F=k(d 0 −d),   Equation II
    where k is the linear spring constant; and
      • d09 is the initial value of the gap distance 78.
  • As discussed in the Background Section of this application, the range in which the forces of Equations I and II are in stable equilibrium occurs when the value (d0−d) is between zero and d0/3. At (d0−d)>d0/3, the electrostatic force of attraction of equation (1) overcomes the spring force of Equation II, such that the reflector 74 snaps to reflector 72, which is undesirable. This occurs because when the reflector 74 is beyond the d0/3 position, excess charge is drawn onto reflectors 72 and 74 due to increased capacitance, which in turn increases the attractive force of Equation I between reflectors 72 and 74, causing reflector 74 to pull towards reflector 72.
  • However, the force between reflectors 72 and 74 of equation I can instead be written as a function of charge according to the following Equation III: Equation III : F = Q 2 2 ɛ A ,
    where Q is the charge on the capacitor.
  • With force F as a function of charge Q rather than distance d, it can be seen that the position of reflector 72 can be effectively controlled over the entire gap distance by controlling the amount of charge on reflectors 72 and 74.
  • Furthermore, micro-electromechanical device 70 has a mechanical time constant that causes delays in the movement of reflector 72 resulting from changes in charge Q on the variable capacitor. The mechanical time constant can be controlled by, among other things, the material used in spring mechanism 82 and by an environment in which micro-electromechanical device operates. For example, the mechanical time constant of micro-electromechanical device 70 will have one value when operating in an environment comprising air and another value when operating in an environment comprising helium.
  • Charge control circuit 32 utilizes each of these characteristics to control the gap distance over substantially the entire range. By applying a selectable control voltage to micro-electromechanical device 70 based on a duration of an enable signal, wherein the duration is less than device 70's mechanical time constant, the variable capacitance of device 70 appears to be “fixed” for the duration that the reference voltage is applied. As a result, the desired charge (Q) accumulated on the reflectors 72 and 74 from application of the selected reference voltage can be determined by Equation IV below:
    Q=C INT *V REF,   Equation IV
    where VREF is the selected reference voltage; and
      • CINT is the initial capacitance of micro-electromechanical device 70.
  • By keeping the duration of the enable signal (i.e., the electrical time constant) less than the mechanical time constant, the reference voltage is applied to micro-electromechanical device 70 for a specific duration to deliver the desired charge and then removed. Once the reference voltage has been removed, micro-electromechanical device 70 is floating, or tri-stated, thus preventing additional charge from accumulating and enabling effective control of the gap distance for an increased control range relative to direct voltage control of micro-electromechanical device 70.
  • Although the description of the preceding paragraphs is with respect to an ideal parallel-plate capacitor and an ideal linear spring restoring force, those of ordinary skill within the art can appreciate that the principle described can be adapted to other micro-electromechanical devices 70, such as interference-based or diffraction-based display devices, parallel plate actuators, non-linear springs and other types of capacitors. With display devices, when the usable range is increased, more colors, saturation levels, and intensities can be achieved.
  • In one embodiment, micro-electromechanical device 70 is a parallel plate actuator 70. Parallel plate actuator 70 includes a flexure 80 in a spring mechanism 82. Spring mechanism 82 is adapted to support a first plate 72 and provide a restoring force to separate the first plate 72 from the second plate 74. Flexure 80 is attached to spring mechanism 82 and is adapted to support second plate 74. The spring mechanism 82 and flexure 80 maintain the first plate 72 in an approximately parallel orientation with respect to the second plate 74 at a deflection distance 78 or gap distance 78.
  • In one embodiment, micro-electromechanical device 70 is a passive pixel mechanism 70. The pixel mechanism 70 includes an electrostatically adjustable top reflector 72 and bottom reflector 74 which are configured to define a resonant optical cavity 76. Charge control circuit 32 is configured to select a visible wavelength of the passive pixel mechanism 70 by storing a charge having a desired magnitude on top reflector 72 and bottom reflector 74, to thereby control a gap distance 78.
  • FIG. 3 illustrates schematically at 90 one embodiment of switch circuit 40 according to the present invention. Charge control circuit 32 includes a first switch 91 and a second switch 93. In one embodiment, first switch 91 is a -p-channel metal-oxide-semiconductor (PMOS) device having a gate 94, a source 96, and a drain 98. In one embodiment, second switch 93 is an n-channel metal-oxide-semiconductor (NMOS) device having a gate 104, a drain 106, and a source 108.
  • First switch 91 receives the selected reference voltage (VREF) at source 96 via path 54 and the enable signal at gate 94 via path 56. Drain 98 is coupled to first conductive plate 42 of micro-electromechanical device 34 via path 60. Second switch 93 is coupled across micro-electromechanical device 34 with drain 106 coupled to first conductive plate 42 and source 108 coupled to second conductive plate 44 via ground. Second switch 93 receives the clear signal at gate 104 via path 58.
  • Switch circuit 40 operates as described below to cause a charge having a desired magnitude to be stored on first and second conductive plates 42 and 44. Initially, the enable signal is at a “high” level, the clear signal is at a “low” level, and the reference voltage is at a selected voltage level. The clear signal is then changed from a “low” level to a “high” level, causing second switch 93 to turn on and take first conductive plate 42 to ground, thereby removing any charge that may have been stored on variable capacitor 46. The signal is then returned to the “low” level causing second switch 93 to again turn off.
  • The enable signal is then changed from the “high” level to a “low” level, causing first switch 91 to turn on to thereby apply the reference voltage to variable capacitor 46 and cause a desired charge to accumulate on first and second conductive plates 42 and 44, and thereby set the gap distance 48 to a desired distance. The enable signal stays “low” for a predetermined duration before returning to the “high” level causing first switch 91 to again turn off, decoupling the reference voltage from micro-electromechanical device 34. At this point, the micro-electromechanical device is tri-stated, or isolated, and charge can no longer flow. The predetermined duration is shorter than a mechanical time constant of micro-electromechanical device 34 resulting in the variable capacitor 46 appears to be substantially “fixed” during the predetermined duration so that the stored charge can be calculated using Equation IV. Thus, in one embodiment, the predetermined duration is a fixed value and the value of the reference voltage is varied to thereby control the magnitude of the charge stored on variable capacitor 46
  • In one embodiment, switch circuit 40 does not include second switch 93 and does not receive the clear signal to first remove any stored charge from variable capacitor 46 prior to charging variable capacitor 46 to a desired magnitude. Thus, rather than charging variable capacitor 46 from a value of zero each time the variable gap distance is changed, the reference voltage is modified as required to transition from one gap distance to another gap distance. To transition to a smaller gap distance from a large gap distance, the reference voltage is increased to add charge to variable capacitor 46. To transition to a larger gap distance from a smaller gap distance, the reference voltage is decreased to thereby remove charge from variable capacitor 46.
  • FIG. 4 is a block diagram illustrating an exemplary embodiment of a micro-electromechanical system 120 according to the present invention. Micro-electromechanical system 120 comprises an M-row by N-column array of micro-electromechanical (MEM) cells 122, with each cell 122 comprising a micro-electromechanical device 34 and switch circuit 40. Although not illustrated for simplicity, each mirco-electromechanical device 34 further comprises a first conductive plate 42 and a second conductive plate 44 forming a variable capacitor 46 separated by a variable gap distance 48
  • Each switch circuit 40 is configured to control the magnitude of a stored charge on variable capacitor 46 of its associated micro-electromechanical device 34 to thereby control the associated variable gap distance 48. Each row of the M rows of the array receives a separate clear signal 124 and enable signal 126, for a total of M clear signals and M enable signals, with all switch circuits 40 of a given row receive the same clear and enable signals. Each column of the N columns of the array receives a separate reference voltage (VREF) 128, for a total of N reference voltage signals.
  • To store, or “write”, a desired charge to each micro-electromechanical device 32 of a given row of micro-electromechanical cells 122, a reference voltage having a selected value is provided to each of the N columns, with each of the N reference voltage signals potentially having a different selected value. The clear signal for the given row is then “pulsed” to cause each of the switch circuits 40 of the given row to remove, or clear, any potential stored charge from its associated micro-electro mechanical device 34. The enable signal for the given row is then “pulsed” to cause each switch circuit 40 of the given row to apply its associated reference voltage to its associated micro-electromechanical for the predetermined duration. As a result, a stored charge having a desired magnitude based on the value of the applied reference voltage is stored on the associated variable capacitor to thereby set the variable gap distance based on the desired magnitude of the stored charge. This procedure is repeated for each row of the array to “write” a desired charge to each micro-electromechanical cell of the array.
  • Although specific embodiments have been illustrated and described herein for purposes of description of the preferred embodiment, it will be appreciated by those of ordinary skill in the art that a wide variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. Those with skill in the chemical, mechanical, electro-mechanical, electrical, and computer arts will readily appreciate that the present invention may be implemented in a very wide variety of embodiments. This application is intended to cover any adaptations or variations of the preferred embodiments discussed herein. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.

Claims (24)

1-12. (cancelled).
13. A micro-electromechanical system comprising:
an M-row by N-column array of a micro-electromechanical cells, wherein each cell comprises:
a micro-electromechanical system (MEMS) device having a variable capacitor formed by a movable first conductive plate and a fixed second conductive plate separated by a variable gap distance; and
a switch circuit configured to receive a reference voltage having a selected voltage level and configured to respond to an enable signal having a duration at least as long as an electrical time constant of the MEMS device, but shorter than a mechanical time constant of the MEMS device, to apply the selected voltage level across the first and second plates for the duration to thereby cause a stored charge having a desired magnitude to accumulate on the variable capacitor, wherein the variable gap distance is a function of the magnitude of the stored charge.
14. The micro-electromechanical system of claim 13, wherein each of the M rows receives a separate enable signal and all N switch circuits of a given row receive a same enable signal.
15. The micro-electromechanical system of claim 13, wherein each of the N columns receives a separate reference voltage and all M switch circuits of a given column receive a same reference voltage, wherein each separate reference voltage can have a different selected voltage level.
16. The micro-electromechanical system of claim 13, wherein each switch circuit comprises:
a first switch coupled to the micro-electromechanical device and configured to provide the reference voltage to the micro-electromechanical device for the duration of, and in response to, the enable signal.
17. The micro-electromechanical system of claim 16, wherein the first switch comprises:
a p-channel metal-oxide-semiconductor (PMOS) device having a source configured to receive the reference voltage, a gate configured to receive the enable signal, and a drain configured to provide the reference voltage to the micro-electromechanical device based on the enable signal.
18. The micro-electromechanical system of claim 13, further comprising:
a variable power supply configured to provide the reference voltages to the N columns of the array; and
a controller configured to provide the enable signals to the M rows of the array and to control the selected voltage level of the reference voltages provided by the variable power supply to the N columns of the array.
19. The micro-electromechanical system of claim 13, wherein each switch circuit is further configured to discharge a stored charge on the variable capacitor in response to a clear signal.
20. The micro-electromechanical system of claim 19, wherein each of the M rows receives a separate clear signal and all N switch circuits of a given row receive a same clear signal.
21. The micro-electromechanical system of claim 19, wherein each switch circuit further comprises:
a second switch coupled across the first and second conductive plates and configured to discharge the stored charge from the variable capacitor in response to a clear signal.
22. The micro-electromechanical system of claim 21, wherein the second switch comprises:
an n-channel metal-oxide-semiconductor (NMOS) device having a gate configured to receive the clear signal and a drain and source coupled across the first and second conductive plates.
23. The micro-electromechanical system of claim 19, further comprising:
a variable power supply configured to provide the reference voltages to the N columns of the array; and
a controller configured to provide the enable signals and the clear signal to the M rows of the array and to control the selected voltage level of the reference voltages provided by the variable power supply to the N columns of the array.
24-32. (Cancelled).
33. A micro-electromechanical system comprising:
an M-row by N-column array of a micro-electromechanical cells, wherein each cell comprises:
a micro-electromechanical system (MEMS) device having a variable capacitor formed by a movable first conductive plate and a fixed second conductive plate separated by a restoring force providing a variable gap distance; and
a circuit configured to receive a reference voltage having a selected voltage level and configured to apply the reference voltage for a duration shorter than a mechanical time constant of the MEMS device to thereby cause a desired charge to accumulate on the variable capacitor before the reference voltage is removed, wherein the variable gap distance is a function of the magnitude of the stored charge.
34. The micro-electromechanical system of claim 33, wherein each of the M rows receives a separate enable signal to apply the reference voltage and all N switch circuits of a given row receive a same enable signal.
35. The micro-electromechanical system of claim 33, wherein each of the N columns receives a separate reference voltage and all M switch circuits of a given column receive a same reference voltage, wherein each separate reference voltage can have a different selected voltage level.
36. The micro-electromechanical system of claim 33, wherein each circuit comprises:
a first switch coupled to the micro-electromechanical device and configured to provide the reference voltage to the micro-electromechanical device for the duration of, and in response to, an enable signal.
37. The micro-electromechanical system of claim 36, wherein the first switch comprises:
a p-channel metal-oxide-semiconductor (PMOS) device having a source configured to receive the reference voltage, a gate configured to receive the enable signal, and a drain configured to provide the reference voltage to the micro-electromechanical device based on the enable signal.
38. The micro-electromechanical system of claim 33, further comprising:
a variable power supply configured to provide the reference voltages to the N columns of the array; and
a controller configured to provide a set of enable signals to the M rows of the array and to control the selected voltage level of the reference voltages provided by the variable power supply to the N columns of the array.
39. The micro-electromechanical system of claim 33, wherein each circuit is further configured to discharge a stored charge on the variable capacitor in response to a clear signal.
40. The micro-electromechanical system of claim 39, wherein each of the M rows receives a separate clear signal and all N switch circuits of a given row receive a same clear signal.
41. The micro-electromechanical system of claim 39, wherein each circuit further comprises:
a switch coupled across the first and second conductive plates and configured to discharge the stored charge from the variable capacitor in response to a clear signal.
42. The micro-electromechanical system of claim 41, wherein the switch comprises:
an n-channel metal-oxide-semiconductor (NMOS) device having a gate configured to receive the clear signal and a drain and source coupled across the first and second conductive plates.
43. The micro-electromechanical system of claim 39, further comprising:
a variable power supply configured to provide the reference voltages to the N columns of the array; and
a controller configured to provide a set of enable signals and the clear signal to the M rows of the array and to control the selected voltage level of the reference voltages provided by the variable power supply to the N columns of the array.
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Cited By (151)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020075555A1 (en) * 1994-05-05 2002-06-20 Iridigm Display Corporation Interferometric modulation of radiation
US20040058532A1 (en) * 2002-09-20 2004-03-25 Miles Mark W. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040209192A1 (en) * 2003-04-21 2004-10-21 Prime View International Co., Ltd. Method for fabricating an interference display unit
US20040240032A1 (en) * 1994-05-05 2004-12-02 Miles Mark W. Interferometric modulation of radiation
US20040263944A1 (en) * 2003-06-24 2004-12-30 Miles Mark W. Thin film precursor stack for MEMS manufacturing
US20050036095A1 (en) * 2003-08-15 2005-02-17 Jia-Jiun Yeh Color-changeable pixels of an optical interference display panel
US20050046948A1 (en) * 2003-08-26 2005-03-03 Wen-Jian Lin Interference display cell and fabrication method thereof
US20050046922A1 (en) * 2003-09-03 2005-03-03 Wen-Jian Lin Interferometric modulation pixels and manufacturing method thereof
US20050122560A1 (en) * 2003-12-09 2005-06-09 Sampsell Jeffrey B. Area array modulation and lead reduction in interferometric modulators
US20050142684A1 (en) * 2002-02-12 2005-06-30 Miles Mark W. Method for fabricating a structure for a microelectromechanical system (MEMS) device
US20050168431A1 (en) * 2004-02-03 2005-08-04 Clarence Chui Driver voltage adjuster
US20050195468A1 (en) * 2004-03-05 2005-09-08 Sampsell Jeffrey B. Integrated modulator illumination
US20050250235A1 (en) * 2002-09-20 2005-11-10 Miles Mark W Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20050249966A1 (en) * 2004-05-04 2005-11-10 Ming-Hau Tung Method of manufacture for microelectromechanical devices
US20050247477A1 (en) * 2004-05-04 2005-11-10 Manish Kothari Modifying the electro-mechanical behavior of devices
US20050254115A1 (en) * 2004-05-12 2005-11-17 Iridigm Display Corporation Packaging for an interferometric modulator
US20050286113A1 (en) * 1995-05-01 2005-12-29 Miles Mark W Photonic MEMS and structures
US20060001942A1 (en) * 2004-07-02 2006-01-05 Clarence Chui Interferometric modulators with thin film transistors
US20060007517A1 (en) * 2004-07-09 2006-01-12 Prime View International Co., Ltd. Structure of a micro electro mechanical system
US20060024880A1 (en) * 2004-07-29 2006-02-02 Clarence Chui System and method for micro-electromechanical operation of an interferometric modulator
US20060044928A1 (en) * 2004-08-27 2006-03-02 Clarence Chui Drive method for MEMS devices
US20060044246A1 (en) * 2004-08-27 2006-03-02 Marc Mignard Staggered column drive circuit systems and methods
US20060057754A1 (en) * 2004-08-27 2006-03-16 Cummings William J Systems and methods of actuating MEMS display elements
US20060066560A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Systems and methods of actuating MEMS display elements
US20060066594A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Systems and methods for driving a bi-stable display element
US20060065436A1 (en) * 2004-09-27 2006-03-30 Brian Gally System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US20060067652A1 (en) * 2004-09-27 2006-03-30 Cummings William J Methods for visually inspecting interferometric modulators for defects
US20060067651A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Photonic MEMS and structures
US20060066503A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Controller and driver features for bi-stable display
US20060067646A1 (en) * 2004-09-27 2006-03-30 Clarence Chui MEMS device fabricated on a pre-patterned substrate
US20060066595A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for driving a bi-stable display
US20060067641A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer Method and device for packaging a substrate
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US20060066598A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for electrically programmable display
US20060066872A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US20060067644A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of fabricating interferometric devices using lift-off processing techniques
US20060066863A1 (en) * 2004-09-27 2006-03-30 Cummings William J Electro-optical measurement of hysteresis in interferometric modulators
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US20060065366A1 (en) * 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US20060066542A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric modulators having charge persistence
US20060066937A1 (en) * 2004-09-27 2006-03-30 Idc, Llc Mems switch with set and latch electrodes
US20060067643A1 (en) * 2004-09-27 2006-03-30 Clarence Chui System and method for multi-level brightness in interferometric modulation
US20060066559A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US20060066938A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and device for multistate interferometric light modulation
US20060066601A1 (en) * 2004-09-27 2006-03-30 Manish Kothari System and method for providing a variable refresh rate of an interferometric modulator display
US20060066596A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System and method of transmitting video data
US20060066600A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer System and method for display device with reinforcing substance
US20060066936A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric optical modulator using filler material and method
US20060066599A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Reflective display pixels arranged in non-rectangular arrays
US20060065043A1 (en) * 2004-09-27 2006-03-30 William Cummings Method and system for detecting leak in electronic devices
US20060066504A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System with server based control of client device display features
US20060066876A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Method and system for sensing light using interferometric elements
US20060066543A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Ornamental display device
US20060066597A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for reducing power consumption in a display
US20060067642A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Method and device for providing electronic circuitry on a backplate
US20060065940A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Analog interferometric modulator device
US20060066856A1 (en) * 2004-09-27 2006-03-30 William Cummings Systems and methods for measuring color and contrast in specular reflective devices
US20060067649A1 (en) * 2004-09-27 2006-03-30 Ming-Hau Tung Apparatus and method for reducing slippage between structures in an interferometric modulator
US20060077529A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method of fabricating a free-standing microstructure
US20060077126A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Apparatus and method for arranging devices into an interconnected array
US20060077528A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US20060077521A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method of implementation of interferometric modulators for display mirrors
US20060076637A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and system for packaging a display
US20060076634A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer Method and system for packaging MEMS devices with incorporated getter
US20060077504A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and device for protecting interferometric modulators from electrostatic discharge
US20060076311A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060079048A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B Method of making prestructure for MEMS systems
US20060077516A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Device having a conductive light absorbing mask and method for fabricating same
US20060077393A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method for implementation of interferometric modulator displays
US20060077503A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method of providing MEMS device with anti-stiction coating
US20060077527A1 (en) * 2004-09-27 2006-04-13 Cummings William J Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20060079098A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and system for sealing a substrate
US20060077523A1 (en) * 2004-09-27 2006-04-13 Cummings William J Electrical characterization of interferometric modulators
US20060077156A1 (en) * 2004-09-27 2006-04-13 Clarence Chui MEMS device having deformable membrane characterized by mechanical persistence
US20060077505A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for display memory using manipulation of mechanical response
US20060077508A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for multistate interferometric light modulation
US20060077617A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Selectable capacitance circuit
US20060077151A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for a display having transparent components integrated therein
US20060077155A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Reflective display device having viewable display on both sides
US20060077507A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Conductive bus structure for interferometric modulator array
US20060077518A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Mirror and mirror layer for optical modulator and method
US20060077515A1 (en) * 2004-09-27 2006-04-13 Cummings William J Method and device for corner interferometric modulation
US20060077152A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for manipulation of thermal response in a modulator
US20060077145A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device having patterned spacers for backplates and method of making the same
US20060077510A1 (en) * 2004-09-27 2006-04-13 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US20060103643A1 (en) * 2004-09-27 2006-05-18 Mithran Mathew Measuring and modeling power consumption in displays
US20060103613A1 (en) * 2004-09-27 2006-05-18 Clarence Chui Interferometric modulator array with integrated MEMS electrical switches
US20060177950A1 (en) * 2005-02-04 2006-08-10 Wen-Jian Lin Method of manufacturing optical interferance color display
US20060176241A1 (en) * 2004-09-27 2006-08-10 Sampsell Jeffrey B System and method of transmitting video data
US20060250350A1 (en) * 2005-05-05 2006-11-09 Manish Kothari Systems and methods of actuating MEMS display elements
US20060250335A1 (en) * 2005-05-05 2006-11-09 Stewart Richard A System and method of driving a MEMS display device
US20060262380A1 (en) * 1998-04-08 2006-11-23 Idc, Llc A Delaware Limited Liability Company MEMS devices with stiction bumps
US20060268388A1 (en) * 1998-04-08 2006-11-30 Miles Mark W Movable micro-electromechanical device
US20060274074A1 (en) * 1994-05-05 2006-12-07 Miles Mark W Display device having a movable structure for modulating light and method thereof
US20060277486A1 (en) * 2005-06-02 2006-12-07 Skinner David N File or user interface element marking system
US20070019922A1 (en) * 2005-07-22 2007-01-25 Teruo Sasagawa Support structure for MEMS device and methods therefor
US20070035804A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20070053652A1 (en) * 2005-09-02 2007-03-08 Marc Mignard Method and system for driving MEMS display elements
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US20070096300A1 (en) * 2005-10-28 2007-05-03 Hsin-Fu Wang Diffusion barrier layer for MEMS devices
US20070147688A1 (en) * 2005-12-22 2007-06-28 Mithran Mathew System and method for power reduction when decompressing video streams for interferometric modulator displays
US20070170540A1 (en) * 2006-01-18 2007-07-26 Chung Won Suk Silicon-rich silicon nitrides as etch stops in MEMS manufature
US20070177129A1 (en) * 2006-01-06 2007-08-02 Manish Kothari System and method for providing residual stress test structures
US20070182707A1 (en) * 2006-02-09 2007-08-09 Manish Kothari Method and system for writing data to MEMS display elements
US20070189654A1 (en) * 2006-01-13 2007-08-16 Lasiter Jon B Interconnect structure for MEMS device
US20070196944A1 (en) * 2006-02-22 2007-08-23 Chen-Jean Chou Electrical conditioning of MEMS device and insulating layer thereof
US20070194630A1 (en) * 2006-02-23 2007-08-23 Marc Mignard MEMS device having a layer movable at asymmetric rates
US20070194414A1 (en) * 2006-02-21 2007-08-23 Chen-Jean Chou Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof
US20070206267A1 (en) * 2006-03-02 2007-09-06 Ming-Hau Tung Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070242008A1 (en) * 2006-04-17 2007-10-18 William Cummings Mode indicator for interferometric modulator displays
US20070249079A1 (en) * 2006-04-19 2007-10-25 Teruo Sasagawa Non-planar surface structures and process for microelectromechanical systems
US20070247419A1 (en) * 2006-04-24 2007-10-25 Sampsell Jeffrey B Power consumption optimized display update
US20070249081A1 (en) * 2006-04-19 2007-10-25 Qi Luo Non-planar surface structures and process for microelectromechanical systems
US20070258123A1 (en) * 2006-05-03 2007-11-08 Gang Xu Electrode and interconnect materials for MEMS devices
US20070279753A1 (en) * 2006-06-01 2007-12-06 Ming-Hau Tung Patterning of mechanical layer in MEMS to reduce stresses at supports
US20070279729A1 (en) * 2006-06-01 2007-12-06 Manish Kothari Analog interferometric modulator device with electrostatic actuation and release
US20080002210A1 (en) * 2006-06-30 2008-01-03 Kostadin Djordjev Determination of interferometric modulator mirror curvature and airgap variation using digital photographs
US20080003710A1 (en) * 2006-06-28 2008-01-03 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US20080003737A1 (en) * 2006-06-30 2008-01-03 Ming-Hau Tung Method of manufacturing MEMS devices providing air gap control
US20080032439A1 (en) * 2006-08-02 2008-02-07 Xiaoming Yan Selective etching of MEMS using gaseous halides and reactive co-etchants
US20080030825A1 (en) * 2006-04-19 2008-02-07 Qualcomm Incorporated Microelectromechanical device and method utilizing a porous surface
US20080043315A1 (en) * 2006-08-15 2008-02-21 Cummings William J High profile contacts for microelectromechanical systems
US20080055707A1 (en) * 2006-06-28 2008-03-06 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US20080115569A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
US20090207159A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
US7675669B2 (en) 2004-09-27 2010-03-09 Qualcomm Mems Technologies, Inc. Method and system for driving interferometric modulators
US7679627B2 (en) 2004-09-27 2010-03-16 Qualcomm Mems Technologies, Inc. Controller and driver features for bi-stable display
US7702192B2 (en) 2006-06-21 2010-04-20 Qualcomm Mems Technologies, Inc. Systems and methods for driving MEMS display
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US7724993B2 (en) 2004-09-27 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7777715B2 (en) 2006-06-29 2010-08-17 Qualcomm Mems Technologies, Inc. Passive circuits for de-multiplexing display inputs
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US20100245311A1 (en) * 2009-03-27 2010-09-30 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US7813026B2 (en) 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US20100315696A1 (en) * 2009-06-15 2010-12-16 Qualcomm Mems Technologies, Inc. Analog interferometric modulator
US7893919B2 (en) 2004-09-27 2011-02-22 Qualcomm Mems Technologies, Inc. Display region architectures
US7916103B2 (en) 2004-09-27 2011-03-29 Qualcomm Mems Technologies, Inc. System and method for display device with end-of-life phenomena
US8174469B2 (en) 2005-05-05 2012-05-08 Qualcomm Mems Technologies, Inc. Dynamic driver IC and display panel configuration
US8310441B2 (en) 2004-09-27 2012-11-13 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US20130076713A1 (en) * 2011-09-27 2013-03-28 Jung-taek KIM Display apparatus and method of driving the same
US20130135320A1 (en) * 2011-11-30 2013-05-30 Qualcomm Mems Technologies, Inc. Tri-state mems device and drive schemes
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8830557B2 (en) 2007-05-11 2014-09-09 Qualcomm Mems Technologies, Inc. Methods of fabricating MEMS with spacers between plates and devices formed by same
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0123521D0 (en) * 2001-10-01 2001-11-21 Gill Michael J Electrical apparatus
US7218499B2 (en) 2003-05-14 2007-05-15 Hewlett-Packard Development Company, L.P. Charge control circuit
US7788397B1 (en) * 2002-07-23 2010-08-31 Richard Douglas Schultz Method for mitigating adverse processor loading in a personal computer implementation of a wireless local area network adapter
US6829132B2 (en) * 2003-04-30 2004-12-07 Hewlett-Packard Development Company, L.P. Charge control of micro-electromechanical device
US7370185B2 (en) * 2003-04-30 2008-05-06 Hewlett-Packard Development Company, L.P. Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers
US7388247B1 (en) 2003-05-28 2008-06-17 The United States Of America As Represented By The Secretary Of The Navy High precision microelectromechanical capacitor with programmable voltage source
US20070009899A1 (en) * 2003-10-02 2007-01-11 Mounts William M Nucleic acid arrays for detecting gene expression in animal models of inflammatory diseases
KR100537515B1 (en) * 2003-11-22 2005-12-19 삼성전자주식회사 Actuator with improved dynamic characteristics and disk drive having the same
US7656573B2 (en) * 2004-02-28 2010-02-02 Hewlett-Packard Development Company, L.P. Method and apparatus for controlling a gap between conductors in an electro-mechanical device
US7657242B2 (en) * 2004-09-27 2010-02-02 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
CN100509863C (en) 2005-01-05 2009-07-08 财团法人工业技术研究院 Free radical polymerization reaction method and obtained narrow molecular weight distribution polymer
US7834829B2 (en) * 2005-10-03 2010-11-16 Hewlett-Packard Development Company, L.P. Control circuit for overcoming stiction
DE602006005698D1 (en) * 2005-10-14 2009-04-23 Nxp Bv Tunable mems arrangement
GB0521256D0 (en) * 2005-10-19 2005-11-30 Qinetiq Ltd Optical modulation
US7566582B2 (en) * 2005-10-25 2009-07-28 The Charles Stark Draper Laboratory, Inc. Systems, methods and devices relating to actuatably moveable machines
US20070090732A1 (en) * 2005-10-25 2007-04-26 The Charles Stark Draper Laboratory, Inc. Systems, methods and devices relating to actuatably moveable machines
EP1793208B1 (en) 2005-11-30 2009-02-11 ETA SA Manufacture Horlogère Suisse Low power regulated control system for electrostatic actuators
EP1979890A1 (en) 2006-02-10 2008-10-15 Qualcomm Mems Technologies, Inc. Method and system for updating of displays showing deterministic content
US20080247012A1 (en) * 2007-04-04 2008-10-09 Wu Kuohua Angus Variable optical phase modulator
EP2168239A2 (en) 2007-06-13 2010-03-31 Nxp B.V. Tunable mems capacitor
US7595926B2 (en) * 2007-07-05 2009-09-29 Qualcomm Mems Technologies, Inc. Integrated IMODS and solar cells on a substrate
US20090201282A1 (en) * 2008-02-11 2009-08-13 Qualcomm Mems Technologies, Inc Methods of tuning interferometric modulator displays
US8115471B2 (en) * 2008-02-11 2012-02-14 Qualcomm Mems Technologies, Inc. Methods for measurement and characterization of interferometric modulators
WO2009102581A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Impedance sensing to determine pixel state in a passively addressed display array
WO2009134502A2 (en) * 2008-02-11 2009-11-05 Qualcomm Mems Technologies, Inc. Methods for measurement and characterization of interferometric modulators
CA2715299A1 (en) 2008-02-14 2009-08-20 Qualcomm Mems Technologies, Inc. Device having power generating black mask and method of fabricating the same
US8094358B2 (en) * 2008-03-27 2012-01-10 Qualcomm Mems Technologies, Inc. Dimming mirror
US7660028B2 (en) * 2008-03-28 2010-02-09 Qualcomm Mems Technologies, Inc. Apparatus and method of dual-mode display
US7852491B2 (en) 2008-03-31 2010-12-14 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US7787130B2 (en) 2008-03-31 2010-08-31 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US8077326B1 (en) 2008-03-31 2011-12-13 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US7787171B2 (en) * 2008-03-31 2010-08-31 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US7860668B2 (en) * 2008-06-18 2010-12-28 Qualcomm Mems Technologies, Inc. Pressure measurement using a MEMS device
US8027800B2 (en) 2008-06-24 2011-09-27 Qualcomm Mems Technologies, Inc. Apparatus and method for testing a panel of interferometric modulators
US20100134195A1 (en) * 2008-12-03 2010-06-03 Electronics And Telecommunications Research Institute Capacitor having variable capacitance and digitally controlled oscillator including the same
US8711361B2 (en) * 2009-11-05 2014-04-29 Qualcomm, Incorporated Methods and devices for detecting and measuring environmental conditions in high performance device packages
US20110176196A1 (en) * 2010-01-15 2011-07-21 Qualcomm Mems Technologies, Inc. Methods and devices for pressure detection
JP5537180B2 (en) 2010-02-16 2014-07-02 株式会社東芝 Electrostatic actuator device
US20110235156A1 (en) * 2010-03-26 2011-09-29 Qualcomm Mems Technologies, Inc. Methods and devices for pressure detection
US8390916B2 (en) 2010-06-29 2013-03-05 Qualcomm Mems Technologies, Inc. System and method for false-color sensing and display
US8904867B2 (en) 2010-11-04 2014-12-09 Qualcomm Mems Technologies, Inc. Display-integrated optical accelerometer
US8714023B2 (en) 2011-03-10 2014-05-06 Qualcomm Mems Technologies, Inc. System and method for detecting surface perturbations
US8988409B2 (en) * 2011-07-22 2015-03-24 Qualcomm Mems Technologies, Inc. Methods and devices for voltage reduction for active matrix displays using variability of pixel device capacitance
US9305497B2 (en) * 2012-08-31 2016-04-05 Qualcomm Mems Technologies, Inc. Systems, devices, and methods for driving an analog interferometric modulator
JP2016058695A (en) * 2014-09-12 2016-04-21 株式会社東芝 Electronic device
US9750282B2 (en) * 2014-09-12 2017-09-05 Shenzhen Smoore Technology Limited Electronic cigarette and air switch thereof
US9898974B2 (en) * 2015-02-23 2018-02-20 Snaptrack, Inc. Display drive scheme without reset
JP2016186598A (en) * 2015-03-27 2016-10-27 新電元工業株式会社 Control device and control method

Citations (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614922A (en) * 1994-04-04 1997-03-25 Sharp Kabushiki Kaisha Display apparatus
US6140737A (en) * 1999-10-08 2000-10-31 Lucent Technologies Inc. Apparatus and method for charge neutral micro-machine control
US6148006A (en) * 1997-11-12 2000-11-14 Nortel Networks Limited Communication system architecture, exchange having a plurality of broadband modems and method of supporting broadband operation on a one to one basis
US6195196B1 (en) * 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US20010043167A1 (en) * 2000-03-30 2001-11-22 Atsushi Sugahara Display device and moving-film display device
US6329738B1 (en) * 1999-03-30 2001-12-11 Massachusetts Institute Of Technology Precision electrostatic actuation and positioning
US6339493B1 (en) * 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6355534B1 (en) * 2000-01-26 2002-03-12 Intel Corporation Variable tunable range MEMS capacitor
US6373682B1 (en) * 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
US6377438B1 (en) * 2000-10-23 2002-04-23 Mcnc Hybrid microelectromechanical system tunable capacitor and associated fabrication methods
US6404304B1 (en) * 1999-10-07 2002-06-11 Lg Electronics Inc. Microwave tunable filter using microelectromechanical (MEMS) system
US6441449B1 (en) * 2000-02-02 2002-08-27 Motorola, Inc. MEMS variable capacitor with stabilized electrostatic drive and method therefor
US6476786B1 (en) * 1999-06-15 2002-11-05 Sharp Kabushiki Kaisha Liquid crystal display device capable of reducing afterimage attributed to change in dielectric constant at time of response of liquid crystals
US6509812B2 (en) * 2001-03-08 2003-01-21 Hrl Laboratories, Llc Continuously tunable MEMs-based phase shifter
US6525704B1 (en) * 1999-06-09 2003-02-25 Nec Corporation Image display device to control conduction to extend the life of organic EL elements
US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US20040212026A1 (en) * 2002-05-07 2004-10-28 Hewlett-Packard Company MEMS device having time-varying control
US20040227493A1 (en) * 2003-04-30 2004-11-18 Van Brocklin Andrew L. System and a method of driving a parallel-plate variable micro-electromechanical capacitor
US20040240138A1 (en) * 2003-05-14 2004-12-02 Eric Martin Charge control circuit
US20050029548A1 (en) * 2003-04-30 2005-02-10 Martin Eric T. Charge control of micro-electromechanical device
US20050179979A1 (en) * 2004-02-13 2005-08-18 Martin Eric T. System and method for driving a light delivery device
US20060018348A1 (en) * 2003-04-30 2006-01-26 Przybyla James R Optical electronic device with partial reflector layer
US20060082863A1 (en) * 2003-04-30 2006-04-20 Arthur Piehl Optical interference pixel display
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US20110169509A1 (en) * 2010-01-12 2011-07-14 Maxim Integrated Products, Inc. Electrostatic mems driver with on-chip capacitance measurement for autofocus applications

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954789A (en) * 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
WO1999052006A2 (en) * 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
US5636052A (en) * 1994-07-29 1997-06-03 Lucent Technologies Inc. Direct view display based on a micromechanical modulation
US6496348B2 (en) * 1998-03-10 2002-12-17 Mcintosh Robert B. Method to force-balance capacitive transducers
US6088214A (en) * 1998-06-01 2000-07-11 Motorola, Inc. Voltage variable capacitor array and method of manufacture thereof
US6229684B1 (en) * 1999-12-15 2001-05-08 Jds Uniphase Inc. Variable capacitor and associated fabrication method
US6496351B2 (en) * 1999-12-15 2002-12-17 Jds Uniphase Inc. MEMS device members having portions that contact a substrate and associated methods of operating
FI20000339A (en) * 2000-02-16 2001-08-16 Nokia Mobile Phones Ltd Micro-mechanical adjustable capacitor and an integrated adjustable resonator
US6418006B1 (en) * 2000-12-20 2002-07-09 The Board Of Trustees Of The University Of Illinois Wide tuning range variable MEMs capacitor

Patent Citations (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614922A (en) * 1994-04-04 1997-03-25 Sharp Kabushiki Kaisha Display apparatus
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US20120062310A1 (en) * 1994-05-05 2012-03-15 Qualcomm Mems Technologies, Inc. System and method for charge control in a mems device
US6148006A (en) * 1997-11-12 2000-11-14 Nortel Networks Limited Communication system architecture, exchange having a plurality of broadband modems and method of supporting broadband operation on a one to one basis
US6195196B1 (en) * 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US6329738B1 (en) * 1999-03-30 2001-12-11 Massachusetts Institute Of Technology Precision electrostatic actuation and positioning
US6525704B1 (en) * 1999-06-09 2003-02-25 Nec Corporation Image display device to control conduction to extend the life of organic EL elements
US6476786B1 (en) * 1999-06-15 2002-11-05 Sharp Kabushiki Kaisha Liquid crystal display device capable of reducing afterimage attributed to change in dielectric constant at time of response of liquid crystals
US6404304B1 (en) * 1999-10-07 2002-06-11 Lg Electronics Inc. Microwave tunable filter using microelectromechanical (MEMS) system
US6140737A (en) * 1999-10-08 2000-10-31 Lucent Technologies Inc. Apparatus and method for charge neutral micro-machine control
US6373682B1 (en) * 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
US6339493B1 (en) * 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6355534B1 (en) * 2000-01-26 2002-03-12 Intel Corporation Variable tunable range MEMS capacitor
US6441449B1 (en) * 2000-02-02 2002-08-27 Motorola, Inc. MEMS variable capacitor with stabilized electrostatic drive and method therefor
US20010043167A1 (en) * 2000-03-30 2001-11-22 Atsushi Sugahara Display device and moving-film display device
US6377438B1 (en) * 2000-10-23 2002-04-23 Mcnc Hybrid microelectromechanical system tunable capacitor and associated fabrication methods
US6509812B2 (en) * 2001-03-08 2003-01-21 Hrl Laboratories, Llc Continuously tunable MEMs-based phase shifter
US20040212026A1 (en) * 2002-05-07 2004-10-28 Hewlett-Packard Company MEMS device having time-varying control
US20050029548A1 (en) * 2003-04-30 2005-02-10 Martin Eric T. Charge control of micro-electromechanical device
US20060018348A1 (en) * 2003-04-30 2006-01-26 Przybyla James R Optical electronic device with partial reflector layer
US20060082863A1 (en) * 2003-04-30 2006-04-20 Arthur Piehl Optical interference pixel display
US7088566B2 (en) * 2003-04-30 2006-08-08 Hewlett-Packard Development Company, L.P. Charge control of micro-electromechanical device
US20040227493A1 (en) * 2003-04-30 2004-11-18 Van Brocklin Andrew L. System and a method of driving a parallel-plate variable micro-electromechanical capacitor
US7218438B2 (en) * 2003-04-30 2007-05-15 Hewlett-Packard Development Company, L.P. Optical electronic device with partial reflector layer
US7221497B2 (en) * 2003-04-30 2007-05-22 Hewlett-Packard Development Company, L.P. Optical interference pixel display
US7218499B2 (en) * 2003-05-14 2007-05-15 Hewlett-Packard Development Company, L.P. Charge control circuit
US20040240138A1 (en) * 2003-05-14 2004-12-02 Eric Martin Charge control circuit
US20050179979A1 (en) * 2004-02-13 2005-08-18 Martin Eric T. System and method for driving a light delivery device
US20110169509A1 (en) * 2010-01-12 2011-07-14 Maxim Integrated Products, Inc. Electrostatic mems driver with on-chip capacitance measurement for autofocus applications

Cited By (225)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8014059B2 (en) * 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US20020126364A1 (en) * 1994-05-05 2002-09-12 Iridigm Display Corporation, A Delaware Corporation Interferometric modulation of radiation
US20020075555A1 (en) * 1994-05-05 2002-06-20 Iridigm Display Corporation Interferometric modulation of radiation
US8059326B2 (en) 1994-05-05 2011-11-15 Qualcomm Mems Technologies Inc. Display devices comprising of interferometric modulator and sensor
US20040240032A1 (en) * 1994-05-05 2004-12-02 Miles Mark W. Interferometric modulation of radiation
US20050231790A1 (en) * 1994-05-05 2005-10-20 Miles Mark W Method and device for modulating light with a time-varying signal
US20060274074A1 (en) * 1994-05-05 2006-12-07 Miles Mark W Display device having a movable structure for modulating light and method thereof
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US7692844B2 (en) 1994-05-05 2010-04-06 Qualcomm Mems Technologies, Inc. Interferometric modulation of radiation
US20050244949A1 (en) * 1994-05-05 2005-11-03 Miles Mark W Method and device for modulating light
US20050286113A1 (en) * 1995-05-01 2005-12-29 Miles Mark W Photonic MEMS and structures
US20060033975A1 (en) * 1995-05-01 2006-02-16 Miles Mark W Photonic MEMS and structures
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US9110289B2 (en) 1998-04-08 2015-08-18 Qualcomm Mems Technologies, Inc. Device for modulating light with multiple electrodes
US20060262380A1 (en) * 1998-04-08 2006-11-23 Idc, Llc A Delaware Limited Liability Company MEMS devices with stiction bumps
US20060268388A1 (en) * 1998-04-08 2006-11-30 Miles Mark W Movable micro-electromechanical device
US20060250337A1 (en) * 1999-10-05 2006-11-09 Miles Mark W Photonic MEMS and structures
US7830586B2 (en) 1999-10-05 2010-11-09 Qualcomm Mems Technologies, Inc. Transparent thin films
US20050142684A1 (en) * 2002-02-12 2005-06-30 Miles Mark W. Method for fabricating a structure for a microelectromechanical system (MEMS) device
US20080026328A1 (en) * 2002-02-12 2008-01-31 Idc, Llc Method for fabricating a structure for a microelectromechanical systems (mems) device
US20050250235A1 (en) * 2002-09-20 2005-11-10 Miles Mark W Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040058532A1 (en) * 2002-09-20 2004-03-25 Miles Mark W. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040209192A1 (en) * 2003-04-21 2004-10-21 Prime View International Co., Ltd. Method for fabricating an interference display unit
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US20040263944A1 (en) * 2003-06-24 2004-12-30 Miles Mark W. Thin film precursor stack for MEMS manufacturing
US20050036095A1 (en) * 2003-08-15 2005-02-17 Jia-Jiun Yeh Color-changeable pixels of an optical interference display panel
US20060006138A1 (en) * 2003-08-26 2006-01-12 Wen-Jian Lin Interference display cell and fabrication method thereof
US20050046948A1 (en) * 2003-08-26 2005-03-03 Wen-Jian Lin Interference display cell and fabrication method thereof
US20050046922A1 (en) * 2003-09-03 2005-03-03 Wen-Jian Lin Interferometric modulation pixels and manufacturing method thereof
US20070035805A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20050122560A1 (en) * 2003-12-09 2005-06-09 Sampsell Jeffrey B. Area array modulation and lead reduction in interferometric modulators
US20070035804A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20050168431A1 (en) * 2004-02-03 2005-08-04 Clarence Chui Driver voltage adjuster
US20060198013A1 (en) * 2004-03-05 2006-09-07 Sampsell Jeffrey B Integrated modulator illumination
US7706050B2 (en) 2004-03-05 2010-04-27 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US7880954B2 (en) 2004-03-05 2011-02-01 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US20050195468A1 (en) * 2004-03-05 2005-09-08 Sampsell Jeffrey B. Integrated modulator illumination
US20060219435A1 (en) * 2004-05-04 2006-10-05 Manish Kothari Modifying the electro-mechanical behavior of devices
US20050247477A1 (en) * 2004-05-04 2005-11-10 Manish Kothari Modifying the electro-mechanical behavior of devices
US20050249966A1 (en) * 2004-05-04 2005-11-10 Ming-Hau Tung Method of manufacture for microelectromechanical devices
US20050254115A1 (en) * 2004-05-12 2005-11-17 Iridigm Display Corporation Packaging for an interferometric modulator
US20110053304A1 (en) * 2004-05-12 2011-03-03 Qualcomm Mems Technologies, Inc. Method of making an electronic device with a curved backplate
US8853747B2 (en) 2004-05-12 2014-10-07 Qualcomm Mems Technologies, Inc. Method of making an electronic device with a curved backplate
US20060001942A1 (en) * 2004-07-02 2006-01-05 Clarence Chui Interferometric modulators with thin film transistors
US20060007517A1 (en) * 2004-07-09 2006-01-12 Prime View International Co., Ltd. Structure of a micro electro mechanical system
US20060024880A1 (en) * 2004-07-29 2006-02-02 Clarence Chui System and method for micro-electromechanical operation of an interferometric modulator
US7515147B2 (en) * 2004-08-27 2009-04-07 Idc, Llc Staggered column drive circuit systems and methods
US20060044928A1 (en) * 2004-08-27 2006-03-02 Clarence Chui Drive method for MEMS devices
US20110096056A1 (en) * 2004-08-27 2011-04-28 Qualcomm Mems Technologies, Inc. Drive method for mems devices
US7928940B2 (en) 2004-08-27 2011-04-19 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US20060044246A1 (en) * 2004-08-27 2006-03-02 Marc Mignard Staggered column drive circuit systems and methods
US7889163B2 (en) 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US20060057754A1 (en) * 2004-08-27 2006-03-16 Cummings William J Systems and methods of actuating MEMS display elements
US7710629B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US20060066871A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US20060066599A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Reflective display pixels arranged in non-rectangular arrays
US20060065043A1 (en) * 2004-09-27 2006-03-30 William Cummings Method and system for detecting leak in electronic devices
US20060066504A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System with server based control of client device display features
US20060066876A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Method and system for sensing light using interferometric elements
US20060066543A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Ornamental display device
US20060066597A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for reducing power consumption in a display
US20060067642A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Method and device for providing electronic circuitry on a backplate
US20060065940A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Analog interferometric modulator device
US20060066856A1 (en) * 2004-09-27 2006-03-30 William Cummings Systems and methods for measuring color and contrast in specular reflective devices
US20060067649A1 (en) * 2004-09-27 2006-03-30 Ming-Hau Tung Apparatus and method for reducing slippage between structures in an interferometric modulator
US20060077529A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method of fabricating a free-standing microstructure
US20060077126A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Apparatus and method for arranging devices into an interconnected array
US20060077528A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US20060077521A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method of implementation of interferometric modulators for display mirrors
US20060076637A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and system for packaging a display
US20060076634A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer Method and system for packaging MEMS devices with incorporated getter
US20060077504A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and device for protecting interferometric modulators from electrostatic discharge
US20060076311A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060079048A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B Method of making prestructure for MEMS systems
US20060077516A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Device having a conductive light absorbing mask and method for fabricating same
US20060077393A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method for implementation of interferometric modulator displays
US20060077502A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060077503A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method of providing MEMS device with anti-stiction coating
US20060077527A1 (en) * 2004-09-27 2006-04-13 Cummings William J Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20060079098A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and system for sealing a substrate
US20060077523A1 (en) * 2004-09-27 2006-04-13 Cummings William J Electrical characterization of interferometric modulators
US20060077156A1 (en) * 2004-09-27 2006-04-13 Clarence Chui MEMS device having deformable membrane characterized by mechanical persistence
US20060077505A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for display memory using manipulation of mechanical response
US20060077508A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for multistate interferometric light modulation
US20060077617A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Selectable capacitance circuit
US20060077151A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for a display having transparent components integrated therein
US20060077155A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Reflective display device having viewable display on both sides
US20060077507A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Conductive bus structure for interferometric modulator array
US20060077518A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Mirror and mirror layer for optical modulator and method
US20060077515A1 (en) * 2004-09-27 2006-04-13 Cummings William J Method and device for corner interferometric modulation
US20060077381A1 (en) * 2004-09-27 2006-04-13 William Cummings Process control monitors for interferometric modulators
US20060077152A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for manipulation of thermal response in a modulator
US20060077145A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device having patterned spacers for backplates and method of making the same
US20060077510A1 (en) * 2004-09-27 2006-04-13 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US20060103643A1 (en) * 2004-09-27 2006-05-18 Mithran Mathew Measuring and modeling power consumption in displays
US20060103613A1 (en) * 2004-09-27 2006-05-18 Clarence Chui Interferometric modulator array with integrated MEMS electrical switches
US20060066936A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric optical modulator using filler material and method
US20060176241A1 (en) * 2004-09-27 2006-08-10 Sampsell Jeffrey B System and method of transmitting video data
US20060066600A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer System and method for display device with reinforcing substance
US20060209384A1 (en) * 2004-09-27 2006-09-21 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US20060066596A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System and method of transmitting video data
US9097885B2 (en) 2004-09-27 2015-08-04 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US9086564B2 (en) 2004-09-27 2015-07-21 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US20060066601A1 (en) * 2004-09-27 2006-03-30 Manish Kothari System and method for providing a variable refresh rate of an interferometric modulator display
US20060066938A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and device for multistate interferometric light modulation
US20060066559A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US20060067643A1 (en) * 2004-09-27 2006-03-30 Clarence Chui System and method for multi-level brightness in interferometric modulation
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8970939B2 (en) 2004-09-27 2015-03-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US20060066937A1 (en) * 2004-09-27 2006-03-30 Idc, Llc Mems switch with set and latch electrodes
US20060066542A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric modulators having charge persistence
US20070041079A1 (en) * 2004-09-27 2007-02-22 Clarence Chui Interferometric modulators having charge persistence
US20060065366A1 (en) * 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US8878825B2 (en) 2004-09-27 2014-11-04 Qualcomm Mems Technologies, Inc. System and method for providing a variable refresh rate of an interferometric modulator display
US8878771B2 (en) 2004-09-27 2014-11-04 Qualcomm Mems Technologies, Inc. Method and system for reducing power consumption in a display
US20060066863A1 (en) * 2004-09-27 2006-03-30 Cummings William J Electro-optical measurement of hysteresis in interferometric modulators
US8791897B2 (en) 2004-09-27 2014-07-29 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US8735225B2 (en) 2004-09-27 2014-05-27 Qualcomm Mems Technologies, Inc. Method and system for packaging MEMS devices with glass seal
US8682130B2 (en) 2004-09-27 2014-03-25 Qualcomm Mems Technologies, Inc. Method and device for packaging a substrate
US8638491B2 (en) 2004-09-27 2014-01-28 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US8310441B2 (en) 2004-09-27 2012-11-13 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US8124434B2 (en) 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US20060067644A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of fabricating interferometric devices using lift-off processing techniques
US8040588B2 (en) 2004-09-27 2011-10-18 Qualcomm Mems Technologies, Inc. System and method of illuminating interferometric modulators using backlighting
US20060066864A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US20060066872A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US7920135B2 (en) 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
US7916103B2 (en) 2004-09-27 2011-03-29 Qualcomm Mems Technologies, Inc. System and method for display device with end-of-life phenomena
US20060066598A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for electrically programmable display
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US7893919B2 (en) 2004-09-27 2011-02-22 Qualcomm Mems Technologies, Inc. Display region architectures
US20060067641A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer Method and device for packaging a substrate
US20060066595A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for driving a bi-stable display
US7843410B2 (en) 2004-09-27 2010-11-30 Qualcomm Mems Technologies, Inc. Method and device for electrically programmable display
US20080115569A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
US20080115596A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
US20060067646A1 (en) * 2004-09-27 2006-03-30 Clarence Chui MEMS device fabricated on a pre-patterned substrate
US20060066503A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Controller and driver features for bi-stable display
US7808703B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. System and method for implementation of interferometric modulator displays
US20060067651A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Photonic MEMS and structures
US7653371B2 (en) 2004-09-27 2010-01-26 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US7667884B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Interferometric modulators having charge persistence
US7675669B2 (en) 2004-09-27 2010-03-09 Qualcomm Mems Technologies, Inc. Method and system for driving interferometric modulators
US7679627B2 (en) 2004-09-27 2010-03-16 Qualcomm Mems Technologies, Inc. Controller and driver features for bi-stable display
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US7692839B2 (en) 2004-09-27 2010-04-06 Qualcomm Mems Technologies, Inc. System and method of providing MEMS device with anti-stiction coating
US20060067652A1 (en) * 2004-09-27 2006-03-30 Cummings William J Methods for visually inspecting interferometric modulators for defects
US7724993B2 (en) 2004-09-27 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
US20060065436A1 (en) * 2004-09-27 2006-03-30 Brian Gally System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US20060066594A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Systems and methods for driving a bi-stable display element
US7719500B2 (en) 2004-09-27 2010-05-18 Qualcomm Mems Technologies, Inc. Reflective display pixels arranged in non-rectangular arrays
US20060066560A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Systems and methods of actuating MEMS display elements
US7813026B2 (en) 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US20060177950A1 (en) * 2005-02-04 2006-08-10 Wen-Jian Lin Method of manufacturing optical interferance color display
US20080157413A1 (en) * 2005-02-04 2008-07-03 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US7948457B2 (en) 2005-05-05 2011-05-24 Qualcomm Mems Technologies, Inc. Systems and methods of actuating MEMS display elements
US7920136B2 (en) 2005-05-05 2011-04-05 Qualcomm Mems Technologies, Inc. System and method of driving a MEMS display device
US8174469B2 (en) 2005-05-05 2012-05-08 Qualcomm Mems Technologies, Inc. Dynamic driver IC and display panel configuration
US20060250350A1 (en) * 2005-05-05 2006-11-09 Manish Kothari Systems and methods of actuating MEMS display elements
US20060250335A1 (en) * 2005-05-05 2006-11-09 Stewart Richard A System and method of driving a MEMS display device
US20060277486A1 (en) * 2005-06-02 2006-12-07 Skinner David N File or user interface element marking system
US20070019922A1 (en) * 2005-07-22 2007-01-25 Teruo Sasagawa Support structure for MEMS device and methods therefor
US20070053652A1 (en) * 2005-09-02 2007-03-08 Marc Mignard Method and system for driving MEMS display elements
US20070096300A1 (en) * 2005-10-28 2007-05-03 Hsin-Fu Wang Diffusion barrier layer for MEMS devices
US20070147688A1 (en) * 2005-12-22 2007-06-28 Mithran Mathew System and method for power reduction when decompressing video streams for interferometric modulator displays
US8391630B2 (en) 2005-12-22 2013-03-05 Qualcomm Mems Technologies, Inc. System and method for power reduction when decompressing video streams for interferometric modulator displays
US20100271688A1 (en) * 2005-12-29 2010-10-28 Qualcomm Mems Technologies, Inc. Method of creating mems device cavities by a non-etching process
US8394656B2 (en) 2005-12-29 2013-03-12 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US20070177129A1 (en) * 2006-01-06 2007-08-02 Manish Kothari System and method for providing residual stress test structures
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US20070189654A1 (en) * 2006-01-13 2007-08-16 Lasiter Jon B Interconnect structure for MEMS device
US20070170540A1 (en) * 2006-01-18 2007-07-26 Chung Won Suk Silicon-rich silicon nitrides as etch stops in MEMS manufature
US8194056B2 (en) 2006-02-09 2012-06-05 Qualcomm Mems Technologies Inc. Method and system for writing data to MEMS display elements
US20070182707A1 (en) * 2006-02-09 2007-08-09 Manish Kothari Method and system for writing data to MEMS display elements
US20070194414A1 (en) * 2006-02-21 2007-08-23 Chen-Jean Chou Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof
US20070196944A1 (en) * 2006-02-22 2007-08-23 Chen-Jean Chou Electrical conditioning of MEMS device and insulating layer thereof
US20070194630A1 (en) * 2006-02-23 2007-08-23 Marc Mignard MEMS device having a layer movable at asymmetric rates
US20070206267A1 (en) * 2006-03-02 2007-09-06 Ming-Hau Tung Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070242008A1 (en) * 2006-04-17 2007-10-18 William Cummings Mode indicator for interferometric modulator displays
US7903047B2 (en) 2006-04-17 2011-03-08 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US20080030825A1 (en) * 2006-04-19 2008-02-07 Qualcomm Incorporated Microelectromechanical device and method utilizing a porous surface
US20070249079A1 (en) * 2006-04-19 2007-10-25 Teruo Sasagawa Non-planar surface structures and process for microelectromechanical systems
US20070249081A1 (en) * 2006-04-19 2007-10-25 Qi Luo Non-planar surface structures and process for microelectromechanical systems
US8049713B2 (en) 2006-04-24 2011-11-01 Qualcomm Mems Technologies, Inc. Power consumption optimized display update
US20070247419A1 (en) * 2006-04-24 2007-10-25 Sampsell Jeffrey B Power consumption optimized display update
US20070258123A1 (en) * 2006-05-03 2007-11-08 Gang Xu Electrode and interconnect materials for MEMS devices
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US20070279729A1 (en) * 2006-06-01 2007-12-06 Manish Kothari Analog interferometric modulator device with electrostatic actuation and release
US20070279753A1 (en) * 2006-06-01 2007-12-06 Ming-Hau Tung Patterning of mechanical layer in MEMS to reduce stresses at supports
US7702192B2 (en) 2006-06-21 2010-04-20 Qualcomm Mems Technologies, Inc. Systems and methods for driving MEMS display
US20080003710A1 (en) * 2006-06-28 2008-01-03 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US20080055707A1 (en) * 2006-06-28 2008-03-06 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US7777715B2 (en) 2006-06-29 2010-08-17 Qualcomm Mems Technologies, Inc. Passive circuits for de-multiplexing display inputs
US20080002210A1 (en) * 2006-06-30 2008-01-03 Kostadin Djordjev Determination of interferometric modulator mirror curvature and airgap variation using digital photographs
US20080003737A1 (en) * 2006-06-30 2008-01-03 Ming-Hau Tung Method of manufacturing MEMS devices providing air gap control
US8964280B2 (en) 2006-06-30 2015-02-24 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US20080032439A1 (en) * 2006-08-02 2008-02-07 Xiaoming Yan Selective etching of MEMS using gaseous halides and reactive co-etchants
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080043315A1 (en) * 2006-08-15 2008-02-21 Cummings William J High profile contacts for microelectromechanical systems
US8830557B2 (en) 2007-05-11 2014-09-09 Qualcomm Mems Technologies, Inc. Methods of fabricating MEMS with spacers between plates and devices formed by same
US20090207159A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
US20100245311A1 (en) * 2009-03-27 2010-09-30 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US8736590B2 (en) 2009-03-27 2014-05-27 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US8879141B2 (en) 2009-06-15 2014-11-04 Qualcomm Mems Technologies, Inc. Analog interferometric modulator
US20100315696A1 (en) * 2009-06-15 2010-12-16 Qualcomm Mems Technologies, Inc. Analog interferometric modulator
US8619350B2 (en) 2009-06-15 2013-12-31 Qualcomm Mems Technologies, Inc. Analog interferometric modulator
US7990604B2 (en) 2009-06-15 2011-08-02 Qualcomm Mems Technologies, Inc. Analog interferometric modulator
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8963827B2 (en) * 2011-09-27 2015-02-24 Samsung Display Co, Ltd. Display apparatus having a micro-shutter and method of driving the same
US20130076713A1 (en) * 2011-09-27 2013-03-28 Jung-taek KIM Display apparatus and method of driving the same
US20130135320A1 (en) * 2011-11-30 2013-05-30 Qualcomm Mems Technologies, Inc. Tri-state mems device and drive schemes

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CN1543048A (en) 2004-11-03
US20040218341A1 (en) 2004-11-04
US6829132B2 (en) 2004-12-07
US20050029548A1 (en) 2005-02-10
EP1473691A2 (en) 2004-11-03
US7088566B2 (en) 2006-08-08
EP1473691A3 (en) 2007-08-01

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