CN1533568A - 可重写光学数据存储介质及这种介质的应用 - Google Patents

可重写光学数据存储介质及这种介质的应用 Download PDF

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CN1533568A
CN1533568A CNA028110633A CN02811063A CN1533568A CN 1533568 A CN1533568 A CN 1533568A CN A028110633 A CNA028110633 A CN A028110633A CN 02811063 A CN02811063 A CN 02811063A CN 1533568 A CN1533568 A CN 1533568A
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G��-F����
G·-F·周
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J·C·N·里佩尔斯
÷���¶�˹
E·R·梅恩德尔斯
H·J·博格
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Abstract

描述了一种相变型光学数据存储介质(20)，具有一记录叠(2)，记录叠(2)具有一记录层(6)和一金属反射层(3)，还包括至少一个由铟锡氧化物材料(ITO)构成的透明层(4、8)。在记录叠(2)中利用ITO层(4、8)来改进记录层(6)的冷却行为并提供良好的光学对比度。因此，就可以实现较高的数据率。

Description

可重写光学数据存储介质及这种介质的应用
本发明涉及一种通过聚焦的激光束而可重写地记录数据的光学数据存储介质，该介质具有一个衬底，在其一侧沉积有一个记录叠，该记录叠包括：
至少一个透明层，
一相变型记录层，
一金属反射层。
本发明还涉及这种光学数据存储介质在高数据率记录技术中的应用。
在开始段落中所提到的这种类型的光学数据存储介质的一个实施例见于欧洲专利申请书EP 0849729 A2中。该专利申请书中所述的实施例具有一用于可重写地进行相变记录的I+IPIM结构，其中M为具有高光学反射能力的金属反射层，I表示电介质层，I+表示透明高硬度层，P表示相变型记录层。在这种结构中，激光束首先通过I+层进入。I+层设法提高介质关于写入特征的稳定性，例如不稳定性。所提到的可用作高硬度I+层的材料有大量化合物，包括Si、Ge、Al、Ti、Zr、Ta、Nb、In、Sn、Pb、Mg等等的氧化物和氮化物，以及铟锡氧化物。
基于相变原理的光学数据存储介质很有吸引力，因为它既可以直接重写(DOW)且具有高存储密度，又结合了只读光学数据存储系统的易兼容性。在这里，数据存储包括数字视频、数字声频和软件数据存储。相变光学记录技术包括使用聚焦的能量较高的激光束在结晶体记录层中形成微米级以下的的无定形记录标记。在信息记录过程中，介质相对于根据待记录信息而调制的聚焦激光束进行移动。当高能激光束使得结晶体记录层熔化时，标记就会形成。当激光束切断并且/或者随后相对于记录层移动时，已熔化的标记就在记录层中发生淬硬，从而在记录层的暴露区域中留下一个无定形信息标记，而记录层的未暴露区域中保持结晶态。已写入的无定形标记的擦除通过利用低能量水平的相同激光加热而进行再结晶来实现，而不需熔化记录层。这些无定形标记代表那些可利用能量较低的聚焦激光束而经过衬底读取的数据位。这些无定形标记相对于结晶体记录层的反射差异就产生了一个经过调制的的激光束，该激光束随后根据记录的信息由探测器转换成经过调制的光电流。
在相变光学记录技术中一个最重要的要求就是高数据率，这指的是数据可以在此介质中以至少30Mbits/s的用户数据率写入和重写。这样的高数据率要求记录层在DOW过程中具有高结晶速度，也就是短结晶时间。为保证先前记录的无定形标记可在DOW过程中再结晶，记录层必须有适当的结晶速度来与介质相对于激光束的速度相匹配。如果结晶速度不够高，先前记录的表示旧数据的无定形标记在DOW过程中就不能完全擦除，也就是不能完全再结晶。这就导致高噪声级。高结晶速度是在高密度记录和高数据率光学记录介质中，例如在圆盘形高速度CD-RW，DVD-RW，DVD+RW，DVD-RAM，红色和蓝色DVR中特别要求的，它们分别为致密盘和新一代高密度数字通用盘+RW和-RAM的缩写，其中RW和RAM指这些盘的可重写性，还有数字视频记录光学存储盘，其中红色和蓝色是指所使用的激光波长。对这些盘，完全擦除时间(CET)必须低于30ns。CET定义为在结晶环境中使已写入的无定形标记完全结晶所用的擦除脉冲的最小持续时间。CET利用静电测定器测量。对于DVD+RW，每120mm盘具有4.7GB记录密度，需要26Mbits/s的用户数据位率，而对于蓝色DVR，该速率为35Mbits/s。对于高速度版本的DVD+RW和蓝色DVR，要求数据率为50Mbits/s或更高。这些数据位率中每一个都可以转化成最大CET，该最大CET受若干参数的影响，例如记录叠的热学设计和所用的记录层材料。
因此，一个目的是提高光学记录介质如可重写DVD和DVR(数字视频记录器)的数据率。如上文中所述，这可通过提高相变材料的结晶速度从而又进一步减小CET来实现。然而，当结晶速度变高时，由于在数据写入过程中由晶体基底开始的结晶生长不可避免地会发生，因此无定形化过程难以进行。这就会产生比较小、并且难以读取的带有不规则边缘的无定形标记，从而导致不稳定性较高。晶体生长可以通过提高记录层的冷却速度而消除。为保证记录过程中正确形成无定形标记，要求邻近记录层的各层具有足够的散热片作用。这些邻近层利如电介质层的导热率看起来好像太低，因此它们迅速降低记录层温度的能力有限。甚至不可能以足够高的数据率成功写入具有较低冷却行为的层。换句话说，由于P层冷却速度很慢而使得发生丰富的再结晶现象，就造成无定形标记的形成被大大抵消。
本发明的一个目的是提供一种开始段中所述的类型的光学数据存储介质，该介质的散热片作用得以改进以保证在记录叠的记录层上正确形成无定形标记。
为实现上述目的，透明层包括铟锡氧化物材料，除记录叠具有以下顺序的各层之外：
一铟锡氧化物层
一第一电介质层
一相变型记录层
一第二电介质层
一金属反射层。
本发明基于以下观点，与已知透明层，例如现有光学记录技术中已知的常规型电介质层相比，铟锡氧化物层(ITO)的导热率比较高。由于具有低热阻力的ITO作为透明层，所以在记录叠中，热就能易于流向金属反射层中。ITO是一种通常因其具有较高电传导率而得到应用的材料，例如在液晶显示器(LCD’s)中用作透明电极。ITO在光学记录叠中用作具有高热传导率的材料还不为人所知。因此，通过本发明可以具有高于50Mbits/s的数据率。通过降低电介质层的厚度也可以得到较高的冷却速度，但由于光学要求通常不想这样做。
在本发明的光学数据存储介质的一个实施例中，透明层介于记录层和金属反射层之间。与使用非ITO透明层相比，使用ITO作为透明层时，金属反射层和记录层之间的热阻比较低。
在另一个实施例中，存在的透明层与记录层相接触。通过直接接触，在记录过程中记录层的热量以最佳方式传递至透明ITO层并且CET进一步缩短高达大约10％。
在另一个实施例中，还有一个包括铟锡氧化物材料的透明层在记录叠中位于记录层的与透明层一侧相对的一侧。这样，就可以形成一种热对称的叠，其中具有散热片作用的透明层位于记录层的两侧。它的优点改进冷却行为，因而可以更加优化无定形标记在记录层中的写入和擦除。
在另外一个实施例中，至少一个电介质层位于记录叠中与记录层接触。这一电介质层可用于将ITO层与记录层遮蔽。在一些情况下，可能需要使ITO层与记录层隔离，以防记录层的材料可能与ITO层的材料互相作用。另外，它可用于调整叠的光学设计和/或调整记录层与ITO层间的热阻。电介质层I优选地由sense和SiO2的混合物制成，例如(ZnS)80(SiO2)20。这些层也可以由SiO2、Ta2O5、TiO2、ZnS，包括它们的非化学计量组合物制成。
在另一个有利的实施例中，电介质层包括选自Al2O3、SiC、Si3N4、MgO、ZnO和AlN包括其非化学计量组合物在内的化合物。这些层提高了无定形标记在DOW过程中的结晶速度，直接导致可能具有较高的数据率。对无定形标记的结晶过程来说，介于这些层和记录层之间的界面起晶核形成源的作用。
在另外一个有利的实施例中，金属反射层包括金属Ag。已知Ag具有非常高的导热率，可与ITO层结合使用而产生更高的冷却速度。
优选地，当透明层位于金属反射层与记录层之间时，其厚度范围是从10至50nm。太厚的层可能对金属反射层具有较低的传热能力。而且，太厚的层会破坏记录叠的光学对比度，及无定形标记与结晶基底之间的反射差。
优选地，当还有一个透明层位于记录层的远离金属反射层的一侧时，其厚度范围是从50至250nm。这一范围内的层厚度能产生较好的记录叠光学对比度。
优选地，记录层包括Ge和Te元素。更有用的是Ge-Sb-Te、Ge-In-Sb-Te或Ag-In-Sb-Te的化合物。在同是申请人提交的国际专利申请WO 01/13370和WO 97/50084中所述的化合物尤其有用。在WO97/50084中所述的化合物的原子百分比组成通过下式定义：
Ge50xSb40-40xTe60-10x，其中0.166≤x≤0.444。这些成分位于三角形Ge-Sb-Te成分图中连接化合物GeTe和Sb2Te3的线上，并且包括化学计量的化合物Ge2Sb2Te5(x＝0.444)、GeSb2Te4(x＝0.286)和GeSb4Te7(x＝0.166)。这些化合物显示出较短的结晶(擦除)时间。
在WO 01/13370中所述的化合物，其原子百分比组成通过下式定义：
QaInbSbcTed(原子百分率)，其中
Q选自Ag和Ge，
2＜a＜8
0＜b＜6
55＜c＜80
15＜d＜30并且a+b+c+d＝100
数据存储介质的衬底至少能透过激光波长，并且由这些材料制成，例如聚碳酸酯、聚甲基丙烯酸甲酯(PMMA)，无定形聚烯烃或玻璃。只有在激光束经衬底入口面进入记录叠时，才要求衬底具有透过能力。在一个典型实例中，衬底是圆盘形的，直径为120mm而厚度为0.6或1.2mm。当激光束由与衬底一侧相对的一侧进入叠时，衬底可以不透明。
优选地，在记录叠一侧的圆盘形衬底的表面提供有伺服道，它可进行光学扫描。该伺服道通常由螺旋型槽构成，并且在注模或压制过程中通过模子形成于衬底上。另一方面，这些槽可以在复制过程中形成于隔离层的合成树脂上，例如一种UV固化的丙烯酸酯。
任选地，叠的最外层通过一个保护层而同环境屏蔽开，例如，通过UV固化的聚甲基丙烯酸甲酯保护层。保护层必须有良好的光学性能，也就是说当激光由保护层进入记录叠时，保护层基本上没有光学象差且基本上厚度一致。这样，保护层就能透过激光。
通过使用短波长激光，如660nm或更短的波长(红光到蓝光)，就可以实现在记录叠的记录层上读取和擦除数据。
金属反射层和电介质层都可以通过蒸发或溅射方法提供。
ITO层可通过溅射或湿化学法提供。
相变型记录层可通过真空沉积法施加于衬底上。已知的真空沉积法有蒸发(E束蒸发，从熔炉中抗热蒸发)、溅射、低压力化学气相沉积(CVD)、离子涂敷、离子束辅助蒸发、等离子增强CVD。由于反应温度太高，因而不可应用正常热CVD方法。
通过典型实施例和参照附图，可以对本发明作进一步的详细说明。其中：
图1至5分别示出了根据本发明的光学数据存储介质的示意性剖面图。
图6示出了不是根据本发明的光学数据存储介质的示意性剖面图。
图7示出了记录层的熔化阈值能量Pt的两条曲线，该熔化阈值能量为位于记录层与金属反射层之间的各层的总厚度dp-m的函数。
图1所示为根据本发明通过聚焦的激光束10可重写地记录数据的光学数据存储介质20的一个实施例。该介质20具有衬底1，衬底由聚碳酸酯(PC)制成，在其一侧沉积有记录叠2。记录叠2包括：
一透明层4，
一相变型记录层6，
一金属反射层3。
透明层4包括铟锡氧化物(ITO)材料。透明层4被放入记录层6与金属反射层3之间且与记录层6相接触。透明层4的厚度为25nm。在激光波长为670nm时，该ITO材料的复折射率为n＝2.00-i0.02，这表明它对所述激光具有低吸收能力。
另一透明层8，包括铟锡氧化物(ITO)材料，位于记录叠2中记录层6的一侧，该侧与透明层4所在的侧相反。另一透明ITO层8的厚度为130nm。金属反射层3包括金属Ag，厚度为100nm。记录层6包括原子组成为Ge5.0In5.5Sb65.0Te24.5的化合物，厚度为10nm。记录叠2的光学反射在波长为670nm而记录层6处于无定形相时定义为Ra，其值为1.7％。记录叠2的光学反射在波长为670nm而记录层6处于结晶相时，定义为Rc，其值为29.6％。光学对比度为94.3％。光学对比度定义为Rc-Ra/Rmax，该公式中Rmax是Ra与Rc二者中的最大值。
保护层9由诸如能透过激光的UV可固化树脂制成，厚度为100μm，与另一个ITO层8相邻。通过旋涂及随后的UV固化处理可提供保护层9。保护层9也可通过利用压敏胶粘剂(PSA)层涂敷聚碳酸酯(PC)片而提供。
图2所示为光学信息介质20的另一个实施例，其中至少有一个电介质层5、7位于记录叠中与记录层6相接触。特别地，两个电介质层都存在，分别位于记录层6的一侧。在所有实施例中，电介质层均包括化合物(ZnS)80(SiO2)20。每一个电介质层的厚度均为5nm。ITO层4和8厚度分别为20nm和140nm。衬底1，记录层6，金属反射层3和保护层9与图1实施例中的描述相同。Ra值为1.9％，Rc值为29.9％。光学对比度为93.6％。
图3所示为介质20的一个实施例，其中存在一个ITO层4，位于记录层6与金属反射层3之间。ITO层厚度为20nm。电介质层7位于保护层与记录层之间，厚度为130nm。电介质层5位于ITO层与记录层之间，厚度为5nm。衬底1，记录层6，金属反射层3和保护层9与图1实施例中的描述相同。Ra值为2.3％，Rc值为31.4％。光学对比度为92.9％。
图4所示为介质20的又一实施例。它去掉了图3实施例中位于金属反射层3和记录层6之间的电介质层5，且ITO层4的厚度为25nm。Ra值为2.4％，Rc值为31.7％。光学对比度为92.5％。
图5所示为介质20的又一实施例。ITO层8与记录层6接触，位于记录层6的远离金属反射层3的一侧。电介质层5位于记录叠2中与记录层6接触，在记录层6距金属反射层3最近的一侧。电介质层5的厚度为25nm，ITO层8的厚度为130nm。衬底1，记录层6，金属反射层3和保护层9与图1实施例中的描述相同。Ra值为1.4％，Rc值为28.7％。光学对比度为95.2％。
图6中，为进行比较，示出了一个不是根据本发明的光学数据存储介质的典型实施例。所述介质20具有一衬底，在其一侧沉积着记录叠2。叠2包括：至少一个透明层5和/或7、一相变型记录层6、及一金属反射层3。透明电介质层5、7位于记录层的两侧。透明电介质层5、7包括(ZnS)80(SiO2)20。电介质层7厚度为130nm，电介质层5厚度为25nm。该实施例不具有ITO层。衬底1，记录层6，金属反射层3和保护层9与图1实施例中的描述相同。Ra值为2.0％，Rc值为30.8％。光学对比度为93.5％。
图7中，两曲线图71和72所示为熔化阈值能量Pt(单位mW)，分别代表：
图6中的不是根据本发明的介质，其中电介质层5的厚度进行了改变，和
根据图3即根据本发明的介质，其中位于ITO层4与金属反射层3之间的电介质层5厚度为10nm，而非5nm，且ITO层的厚度进行了改变。如图所示，熔化阈值能量为位于金属反射层3与记录层6之间的各层的总厚度dp-m(单位nm)的函数。在图6中的情况下，这仅是(ZnS)80(SiO2)20电介质层5的厚度。在图3中的情况下，这是电介质层5和ITO层4的厚度之和。实际上，因为电介质层5的厚度保持不变，只有ITO层4的厚度发生改变。通过比较曲线71和72，可以清楚地看到ITO层4大大提高了金属阈值能量。这表明由于具有ITO层4，在记录层6与金属反射层3之间的导热率变得更好。由于具有更好的导热率，记录层的冷却速度就得到提高。
应当指出，以上提到的实施例只是对本发明进行举例说明，而非对其做出限制，并且本领域的普通技术人员在不背离附加权利要求的范围的情况下，可以设计多种替代实施例。在权利要求中，圆括号中的参考标记不应被理解为是对权利要求的限制。“包括”一词并不排除除了权利要求所列以外的元素或步骤存在。在一种元素之前的词“一个”并不排除多个这种元素的存在。特定的方法在互不相同的从属权利要求中进行了叙述，但这并不表示这些方法不能组合使用以更有利。
根据本发明，提供了一种可重写相变型光学数据存储介质，其记录层冷却行为得到改进，从而可以产生更高的数据率以便进行高速度记录，并且它适用于直接重写例如高速CD-RW、DVD+RW、DVD-RW、DVD-RAM、红色和蓝色DVD。

Claims (11)

1.一种用于通过聚焦的激光束(10)可重写地记录数据的光学数据存储介质(20)，所述介质(20)具有一衬底(1)，在其一侧沉积有记录叠(2)，记录叠(2)包括：
  至少一个透明层(4)，
  一相变型记录层(6)，
  一金属反射层(3)，
其特征在于，透明层(4)包括铟锡氧化物材料，除记录叠(2)具有以下顺序的各层之外：
  一铟锡氧化物层(4)
  一第一电介质层(7)
  一相变型记录层(6)
  一第二电介质层(5)
  一金属反射层(3)。
2.根据权利要求1所述的光学数据存储介质(20)，其特征在于，透明层(4)介于记录层(6)和金属反射层(3)之间。
3.根据权利要求1或2中任一项所述的光学数据存储介质(20)，其特征在于，存在的透明层(4)与记录层(6)相接触。
4.根据权利要求1-3中任一项所述的光学数据存储介质(20)，其特征在于，另一个包括铟锡氧化物材料的透明层(8)在记录叠(2)中位于记录层(6)的与透明层(4)的侧面相对的一侧。
5.根据权利要求1-4中任一项所述的光学数据存储介质，其特征在于，至少一个电介质层(5、7)位于记录叠(2)中，与记录层(6)接触。
6.根据权利要求5所述的光学数据存储介质(20)，其特征在于，电介质层(5、7)包括选自Al2O3、SiC、Si3N4、MgO、ZnO和AlN的化合物，包括其非化学计量的组合物。
7.根据权利要求1-6中任一项所述的光学数据存储介质(20)，其特征在于，金属反射层(3)包括金属Ag。
8.根据权利要求2-3中任一项所述的光学数据存储介质(20)，其特征在于，透明层(4)厚度范围是从10至50nm。
9.根据权利要求4和权利要求2-3中任一项所述的光学数据存储介质(20)，其特征在于，另一个透明层(8)厚度范围是从50至250nm。
10.根据前述权利要求中任一项所述的光学数据存储介质(20)，其特征在于，记录层(6)包括Ge和Te元素。
11.使用根据权利要求1-10中任一项所述的光学数据存储介质(20)来进行高数据率记录。
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CN104011797A (zh) * 2011-12-22 2014-08-27 甲骨文国际公司 具有透明背面涂层的光学介质
CN104011797B (zh) * 2011-12-22 2017-08-08 甲骨文国际公司 具有透明背面涂层的光学介质

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DE60224389D1 (de) 2008-02-14
JP2004522247A (ja) 2004-07-22
HK1064205A1 (en) 2005-01-21
ATE382935T1 (de) 2008-01-15
KR20030024817A (ko) 2003-03-26
WO2002099797A1 (en) 2002-12-12
TWI233613B (en) 2005-06-01
US20080253272A1 (en) 2008-10-16
DE60224389T2 (de) 2008-12-18
EP1397801A1 (en) 2004-03-17
CA2449122A1 (en) 2002-12-12
EP1397801B1 (en) 2008-01-02
CN1278324C (zh) 2006-10-04

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