CN1530681A - Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof - Google Patents
Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof Download PDFInfo
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- CN1530681A CN1530681A CNA031205968A CN03120596A CN1530681A CN 1530681 A CN1530681 A CN 1530681A CN A031205968 A CNA031205968 A CN A031205968A CN 03120596 A CN03120596 A CN 03120596A CN 1530681 A CN1530681 A CN 1530681A
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Abstract
A parallel transmitting module consists of a high frequency printed circuit board with a signal input port in board plug structure plated by gold at one end, a vertical cavity face transmission laser array to be integrated on a silicon pellet base in bare pellet form as well as to paste it on high frequency printed circuit board, a driving circuit chip integrated on high frequency printed circuit board directly in bare chip form. The vertical cavity face transmission laser array is connected to the driving circuit chip by golden filament and the driving circuit chip is connected to the high frequency printed board by golden filament so parallel light transmission module is formed.
Description
Technical field
The present invention relates to the optical communication transmitter module, more particularly, relate to parallel light emission module and method for making based on vertical cavity surface emitting laser (VCSEL) array.
Background technology
What the light source of tradition light emission module adopted all is edge-emitting laser.The characteristics of edge-emitting laser are to export light perpendicular to cleavage plane, and its beam divergence angle is excessive, and before the chip cleavage, can not carry out the key property test of individual devices, and difficult realization is integrated on a large scale, the manufacturing cost height.By comparison, vertical cavity surface emitting laser (VCSEL) has very superior performance and and cheap price.Its output light is perpendicular to substrate, and the surface light emitting device architecture of this uniqueness has the far and near field distribution of small divergence angle and symmetry, can launch high-quality garden shaped light beam, makes the coupling efficiency of itself and optical fiber greatly improve.Because its volume is little, can realize the work of minimum electric current, can reduce the requirement to drive circuit chip greatly, reduces the power consumption of module and improve thermal characteristics.Because vertical cavity surface emitting laser is the surface light emitting device, the preparation and test technology finish be in charge of with packaging technology before, can carry out at built-in testing, compatible fully with the microelectronics planar technology, satisfied key request low-cost, this modern industry of mass preparation.As the LASER Light Source of low-cost and high-performance, will have great application prospect aspect Networks of Fiber Communications, LAN (Local Area Network), high speed data transfer, the parallel optical interconnecting.
Summary of the invention
The purpose of this invention is to provide a kind of parallel light emission module based on vertical-cavity surface-emitting laser array, it is the parallel light emission module that is applied to short distance (in 300 meters) transmission, by the parallel advantage of light transmission conceptual design on performance and cost, realize high bandwidth, optical transmission system cheaply.
The parallel light emission module of a kind of vertical-cavity surface-emitting laser array of the present invention is characterized in that, comprising:
One high frequency printed circuit boards is formed with a signal input port at an end of this high frequency printed circuit boards, and this signal input port adopts gold-plated plate structure;
One vertical-cavity surface-emitting laser array, this vertical-cavity surface-emitting laser array directly is integrated on the silicon chip base with the form of nude film, is bonded in above the high frequency printed circuit boards with bonding mode again;
Driving circuit chip, this drive circuit chip directly is integrated in above the high frequency printed circuit boards with the form of nude film;
This vertical-cavity surface-emitting laser array is connected with spun gold with drive circuit chip, and this drive circuit chip is connected with spun gold with high frequency printed circuit boards, constitutes parallel light emission module.
Wherein said vertical-cavity surface-emitting laser array is 1 * 12 linear array, is to adopt the Organometallic Chemistry vapor deposition process to realize that the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
Wherein said high frequency printed circuit boards adopts the design of 4 veneer structures, and signal transmssion line is the microstrip line of 0.15 μ m live width.
Wherein said parallel light emission module, the transfer rate of individual channel are 2.5Gbit/s, and total transfer rate is 30Gbit/s.
Wherein said vertical-cavity surface-emitting laser array swashs ejaculation light at work, be high-quality circular light beam, directly be coupled into fiber array and transmit in optical fiber by active technique of alignment, the dimensional structure of this fiber array is compatible mutually with the attachment unit interface of MTP/MPO standard.
The method for making of the parallel light emission module of a kind of vertical-cavity surface-emitting laser array of the present invention is characterized in that, comprising following steps:
1) get a high frequency printed circuit boards, be formed with a signal input port at an end of this high frequency printed circuit boards, this signal input port adopts gold-plated plate structure;
2) form of a vertical-cavity surface-emitting laser array with nude film directly is integrated on the silicon chip base, is bonded in above the high frequency printed circuit boards with bonding mode again;
3) directly be integrated in high frequency printed circuit boards above with the form of nude film driving circuit chip;
4) this vertical-cavity surface-emitting laser array is connected with spun gold with drive circuit chip, this drive circuit chip is connected with spun gold with high frequency printed circuit boards, constitutes parallel light emission module.
Step 2 wherein) described vertical-cavity surface-emitting laser array is 1 * 12 linear array, is to adopt the Organometallic Chemistry vapor deposition process to realize that the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
Wherein the described high frequency printed circuit boards of step 3) adopts the design of 4 veneer structures, and signal transmssion line is the microstrip line of 0.15 μ m live width.
The described parallel light emission module of step 4) wherein, the transfer rate of individual channel is 2.5Gbit/s, total transfer rate is 30Gbit/s.
Step 2 wherein) described vertical-cavity surface-emitting laser array swashs at work and penetrates light, be high-quality circular light beam, directly be coupled into fiber array and transmit in optical fiber by active technique of alignment, the dimensional structure of this fiber array is compatible mutually with the attachment unit interface of MTP/MPO standard.
Description of drawings
For further specifying technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is an embodiments of the invention three-dimensional structure synoptic diagram;
Fig. 2 is the structural representation of the single vertical cavity surface emitting laser of the present invention (VCSEL).
Embodiment
With reference now to Fig. 1,, to adopt 1 * 12 vertical cavity surface emitting laser (VCSEL) array 107 of mocvd method growth to place above a silicon (Si) the sheet base 102, again this base 102 is bonded in above the high frequency printed circuit boards 105 with drive circuit chip 103 usefulness insulating gels, the signal input part 104 of high frequency printed circuit boards 105 is the plate structure, corresponding with it is the special-purpose electric connector of AMP Inc., the data-signal that is written into is Low Voltage Differential Signal (LVDS), arrive drive circuit chip through the transmission line on the high frequency printed circuit boards 105, because the threshold voltage of vertical cavity surface emitting laser (VCSEL) need of work is higher than the applied signal voltage of circuit board, so the function of drive circuit chip is that Low Voltage Differential Signal is converted to the electrode that higher current signal is injected into vertical cavity surface emitting laser (VCSEL) array.Wherein laser array 107 is to be connected by spun gold 106 pressure weldings with match circuit on drive circuit chip 103 and the printed circuit board.Integrality for high-frequency signal considers that printed circuit board 105 needs to adopt the high-frequency ceramic material, and by the design of 4 veneer structures, the two-layer of outside is signals layer, and middle two-layer bus plane and the stratum of being respectively need add decoupling capacitor between bus plane and the stratum.Because vertical cavity surface emitting laser (VCSEL) array 107 can be launched high-quality garden shaped light beam, so bright dipping can directly be coupled into multimode optical fiber array 101.
Fig. 2 is the structure of single vertical cavity surface emitting laser (VCSEL), and light hole 201 is penetrated the luminous optical position that goes out for laser instrument swashs, and diameter is 5 μ m, and its electrode 202 is the electric current injection side, links to each other with drive circuit chip 103, and it is of a size of 100 * 80 μ m
2, the sharp optical wavelength of penetrating of laser instrument is 850nm.
Please again in conjunction with consulting Fig. 1, Fig. 2, the method for making of the parallel light emission module of a kind of vertical-cavity surface-emitting laser array of the present invention comprises the steps:
1) get a high frequency printed circuit boards 105, be formed with a signal input port at an end of this high frequency printed circuit boards 105, this signal input port adopts gold-plated plate structure 104;
2) form of a vertical-cavity surface-emitting laser array 107 with nude film directly is integrated on the silicon chip base 102, is bonded in above the high frequency printed circuit boards 105 with bonding mode again; This vertical-cavity surface-emitting laser array 107 is 1 * 12 linear array, is to adopt the Organometallic Chemistry vapor deposition process to realize that the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
3) form of driving circuit chip 103 with nude film directly is integrated in above the high frequency printed circuit boards 105;
4) this vertical-cavity surface-emitting laser array 107 is connected with drive circuit chip 103 usefulness spun golds 106, this drive circuit chip 103 is connected with high frequency printed circuit boards 105 usefulness spun golds 106, constitutes parallel light emission module.
Vertical-cavity surface-emitting laser array 107 is 1 * 12 linear array, is to adopt the Organometallic Chemistry vapor deposition process to realize that the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
8, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6 is characterized in that, wherein the described high frequency printed circuit boards 105 of step 3) adopts the design of 4 veneer structures, and signal transmssion line is the microstrip line of 0.15 μ m live width.
9, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6 is characterized in that, the described parallel light emission module of step 4) wherein, and the transfer rate of individual channel is 2.5Gbit/s, total transfer rate is 30Gbit/s.
10, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6, it is characterized in that, step 2 wherein) described vertical-cavity surface-emitting laser array 107 swashs at work and penetrates light, be high-quality circular light beam, directly be coupled into fiber array 101 and transmit in optical fiber by active technique of alignment, the dimensional structure of this fiber array is compatible mutually with the attachment unit interface of MTP/MPO standard.
Technology of the present invention is simple, owing to be that vertical cavity surface emitting laser (VCSEL) array and drive circuit chip is directly integrated on the nude film basis, has save traditional Chip Packaging operation, and is easy and simple to handle, can cut down finished cost greatly; Safe and reliable, have extremely strong practicality; Can reduce to encapsulate the size of back module, better adapt to the trend of light emission module miniaturization.
Specific embodiments of the present invention has been described in the front, can make further modification and improvement for the people who is familiar with this area.We have reason to think that the present invention is not limited only to described special shape.After every those skilled in the art has seen instructions of the present invention, thinkable other do not exceed all modifications situation of thinking of the present invention and scope, all should regard as within protection scope of the present invention.
Claims (10)
1, a kind of parallel light emission module of vertical-cavity surface-emitting laser array is characterized in that, comprising:
One high frequency printed circuit boards is formed with a signal input port at an end of this high frequency printed circuit boards, and this signal input port adopts gold-plated plate structure;
One vertical-cavity surface-emitting laser array, this vertical-cavity surface-emitting laser array directly is integrated on the silicon chip base with the form of nude film, is bonded in above the high frequency printed circuit boards with bonding mode again;
Driving circuit chip, this drive circuit chip directly is integrated in above the high frequency printed circuit boards with the form of nude film;
This vertical-cavity surface-emitting laser array is connected with spun gold with drive circuit chip, and this drive circuit chip is connected with spun gold with high frequency printed circuit boards, constitutes parallel light emission module.
2, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 1, it is characterized in that, wherein said vertical-cavity surface-emitting laser array is 1 * 12 linear array, be to adopt the Organometallic Chemistry vapor deposition process to realize, the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
3, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 1 is characterized in that, wherein said high frequency printed circuit boards adopts the design of 4 veneer structures, and signal transmssion line is the microstrip line of 0.15 μ m live width.
4, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 1 is characterized in that, wherein said parallel light emission module, and the transfer rate of individual channel is 2.5Gbit/s, total transfer rate is 30Gbit/s.
5, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 1, it is characterized in that, wherein said vertical-cavity surface-emitting laser array swashs ejaculation light at work, be high-quality circular light beam, directly be coupled into fiber array and transmit in optical fiber by active technique of alignment, the dimensional structure of this fiber array is compatible mutually with the attachment unit interface of MTP/MPO standard.
6, a kind of method for making of parallel light emission module of vertical-cavity surface-emitting laser array is characterized in that, comprising following steps:
1) get a high frequency printed circuit boards, be formed with a signal input port at an end of this high frequency printed circuit boards, this signal input port adopts gold-plated plate structure;
2) form of a vertical-cavity surface-emitting laser array with nude film directly is integrated on the silicon chip base, is bonded in above the high frequency printed circuit boards with bonding mode again;
3) directly be integrated in high frequency printed circuit boards above with the form of nude film driving circuit chip;
4) this vertical-cavity surface-emitting laser array is connected with spun gold with drive circuit chip, this drive circuit chip is connected with spun gold with high frequency printed circuit boards, constitutes parallel light emission module.
7, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6, it is characterized in that, step 2 wherein) described vertical-cavity surface-emitting laser array is 1 * 12 linear array, be to adopt the Organometallic Chemistry vapor deposition process to realize, the light hole diameter of single vertical cavity surface emitting laser is 5 μ m, and its electrode is of a size of 100 * 80 μ m
2
8, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6 is characterized in that, wherein the described high frequency printed circuit boards of step 3) adopts the design of 4 veneer structures, and signal transmssion line is the microstrip line of 0.15 μ m live width.
9, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6 is characterized in that, the described parallel light emission module of step 4) wherein, and the transfer rate of individual channel is 2.5Gbit/s, total transfer rate is 30Gbit/s.
10, the parallel light emission module of vertical-cavity surface-emitting laser array according to claim 6, it is characterized in that, step 2 wherein) described vertical-cavity surface-emitting laser array swashs at work and penetrates light, be high-quality circular light beam, directly be coupled into fiber array and transmit in optical fiber by active technique of alignment, the dimensional structure of this fiber array is compatible mutually with the attachment unit interface of MTP/MPO standard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031205968A CN1530681A (en) | 2003-03-14 | 2003-03-14 | Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031205968A CN1530681A (en) | 2003-03-14 | 2003-03-14 | Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof |
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| CN1530681A true CN1530681A (en) | 2004-09-22 |
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| CNA031205968A Pending CN1530681A (en) | 2003-03-14 | 2003-03-14 | Parallel light transmitting module of vertical cavity transmitting laser array and producing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385125A (en) * | 2011-10-28 | 2012-03-21 | 江苏奥雷光电有限公司 | Multi-channel small form-factor transceiver and assembly method |
| CN101907753B (en) * | 2009-06-03 | 2012-04-25 | 中国科学院微电子研究所 | Method for assembling multiple paths of parallel photoelectric modules |
| CN103018856A (en) * | 2012-12-25 | 2013-04-03 | 武汉电信器件有限公司 | High-speed butterfly-packaged light emitter component with drive IC (integrated circuit) |
| CN103885143A (en) * | 2014-04-15 | 2014-06-25 | 昆山柯斯美光电有限公司 | Chip array and parallel optical fiber coupled alignment assembly and manufacturing method of chip array and parallel optical fiber coupled alignment assembly |
| CN104767561A (en) * | 2014-01-03 | 2015-07-08 | 上海光维通信技术股份有限公司 | Multi-channel laser output device and testing device for MPO (Maximum Power Output) optical fiber connector |
| CN108551503A (en) * | 2018-04-25 | 2018-09-18 | 北京小米移动软件有限公司 | A kind of optical device module and mobile terminal |
| CN108777434A (en) * | 2018-05-15 | 2018-11-09 | 维沃移动通信有限公司 | A kind of vertical cavity surface emitting laser and electronic equipment |
-
2003
- 2003-03-14 CN CNA031205968A patent/CN1530681A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907753B (en) * | 2009-06-03 | 2012-04-25 | 中国科学院微电子研究所 | Method for assembling multiple paths of parallel photoelectric modules |
| CN102385125A (en) * | 2011-10-28 | 2012-03-21 | 江苏奥雷光电有限公司 | Multi-channel small form-factor transceiver and assembly method |
| CN103018856A (en) * | 2012-12-25 | 2013-04-03 | 武汉电信器件有限公司 | High-speed butterfly-packaged light emitter component with drive IC (integrated circuit) |
| CN104767561A (en) * | 2014-01-03 | 2015-07-08 | 上海光维通信技术股份有限公司 | Multi-channel laser output device and testing device for MPO (Maximum Power Output) optical fiber connector |
| CN103885143A (en) * | 2014-04-15 | 2014-06-25 | 昆山柯斯美光电有限公司 | Chip array and parallel optical fiber coupled alignment assembly and manufacturing method of chip array and parallel optical fiber coupled alignment assembly |
| CN103885143B (en) * | 2014-04-15 | 2016-06-15 | 昆山柯斯美光电有限公司 | The assembly that chip array and parallel optical fibre are coupled and aligned and its preparation method |
| CN108551503A (en) * | 2018-04-25 | 2018-09-18 | 北京小米移动软件有限公司 | A kind of optical device module and mobile terminal |
| CN108551503B (en) * | 2018-04-25 | 2020-08-11 | 北京小米移动软件有限公司 | Optical device module and mobile terminal |
| CN108777434A (en) * | 2018-05-15 | 2018-11-09 | 维沃移动通信有限公司 | A kind of vertical cavity surface emitting laser and electronic equipment |
| CN108777434B (en) * | 2018-05-15 | 2019-12-13 | 维沃移动通信有限公司 | Vertical cavity surface emitting laser and electronic equipment |
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