CN1515070A - 低噪声放大器 - Google Patents

低噪声放大器 Download PDF

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Publication number
CN1515070A
CN1515070A CNA028114817A CN02811481A CN1515070A CN 1515070 A CN1515070 A CN 1515070A CN A028114817 A CNA028114817 A CN A028114817A CN 02811481 A CN02811481 A CN 02811481A CN 1515070 A CN1515070 A CN 1515070A
Authority
CN
China
Prior art keywords
terminal
transistor
noise
low noise
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028114817A
Other languages
English (en)
Chinese (zh)
Inventor
P・安德雷尼
P·安德雷尼
芾嫉
H·斯杰兰德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0108890A external-priority patent/GB2374477B/en
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of CN1515070A publication Critical patent/CN1515070A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
CNA028114817A 2001-04-09 2002-04-08 低噪声放大器 Pending CN1515070A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0108890.5 2001-04-09
GB0108890A GB2374477B (en) 2001-04-09 2001-04-09 Low noise amplifiers
US28313801P 2001-04-12 2001-04-12
US60/283,138 2001-04-12

Publications (1)

Publication Number Publication Date
CN1515070A true CN1515070A (zh) 2004-07-21

Family

ID=26245949

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028114817A Pending CN1515070A (zh) 2001-04-09 2002-04-08 低噪声放大器

Country Status (2)

Country Link
CN (1) CN1515070A (fr)
WO (1) WO2002082639A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100461620C (zh) * 2005-12-28 2009-02-11 华东师范大学 微分叠加射频cmos低噪声放大器
CN1832335B (zh) * 2006-04-13 2010-05-12 复旦大学 一种cmos超宽带低噪声放大器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101094641B1 (ko) * 2004-12-01 2011-12-20 레이디오펄스 주식회사 작은 레이아웃 면적을 가지는 저잡음 증폭기

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674337B2 (en) * 2000-03-28 2004-01-06 California Institute Of Technology Concurrent multi-band low noise amplifier architecture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100461620C (zh) * 2005-12-28 2009-02-11 华东师范大学 微分叠加射频cmos低噪声放大器
CN1832335B (zh) * 2006-04-13 2010-05-12 复旦大学 一种cmos超宽带低噪声放大器

Also Published As

Publication number Publication date
WO2002082639A8 (fr) 2003-03-13
WO2002082639A1 (fr) 2002-10-17

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication