CN1485935A - Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process - Google Patents
Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process Download PDFInfo
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- CN1485935A CN1485935A CNA021292477A CN02129247A CN1485935A CN 1485935 A CN1485935 A CN 1485935A CN A021292477 A CNA021292477 A CN A021292477A CN 02129247 A CN02129247 A CN 02129247A CN 1485935 A CN1485935 A CN 1485935A
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- strontium titanate
- manganese oxygen
- lanthanum manganese
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- BLYIPOZGPVBBLO-UHFFFAOYSA-N [O].[Mn].[La] Chemical compound [O].[Mn].[La] BLYIPOZGPVBBLO-UHFFFAOYSA-N 0.000 title claims description 40
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 5
- -1 electrodes Substances 0.000 claims abstract 3
- 239000000463 material Substances 0.000 claims description 23
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 238000007796 conventional method Methods 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229920000297 Rayon Polymers 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 4
- 230000005611 electricity Effects 0.000 claims 1
- 229910018663 Mn O Inorganic materials 0.000 abstract 1
- 229910003176 Mn-O Inorganic materials 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 10
- 229910002367 SrTiO Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N oxomanganese Chemical compound [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The invention refers to a p-n junction structured BaTiO3 and La-Mn-O doped giant-magnetic device. It includes: substrate, electrodes, lead wires and at least one or more p-n junction structures on the substrate; the electrodes set on the upmost extension layer and the substrate, or set on the upmost extension layer and the first extension layer on the substrate, the lead wire connected with the electrodes. It is a p-n junction structured high-sensitivity magnetic functional device.
Description
Technical field
The present invention relates to a kind of giant reluctivity device and preparation method field, particularly a kind of strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and preparation method with p-n junction structure.
Background technology
For function element with electromagnetic property, people are most interested in be it under the effect in electric field or magnetic field, its characteristic can produce very big even theatrical variation.Since giant magnetic resistance is found, worldwide started the upsurge of the exploration and the application of giant magnetic resistance.(as document 1, S.Jin et al.Science, 264,431 (1994); Document 2, Y.D.Chuang et al.Science, 292,1509 (2001); Document 3, A.P.Ramirez et al.Science, 277,546 (1997); Document 4, Y.Shimikawa et al.Nature, 379,53 (1996)).Utilize the giant magnetoresistance characteristic of material, people successfully produce large reluctance magnetic head and magnetic memory etc., and have obtained huge economic benefit.But basic structure p-n junction for electronics application, although people have passed through very big effort, up to the present, the giant magnetic resistance of developing all is p type characteristics, the giant magnetic resistance of n type is not also explored, and the long-expected giant magnetoresistance p-n junction of people does not also occur.We up-to-date experimental result show, lanthanum manganese oxygen doping with p type and giant magnetoresistance characteristic and the strontium titanate doping epitaxial growth with n type characteristic are in the same place, and the p-n junction of formation has the giant magnetoresistance characteristic, and p-n junction forward and reverse has identical magnetic characteristic.If adopt the lamination extension, prepare the multilayer sample of many p-n junctions structure, because the stack of a plurality of forward and reverse p-n junction magnetic characteristics strengthens its giant magnetoresistance effect greatly.Utilize this result, just can prepare strontium titanate doping and lanthanum manganese oxygen doping giant magnetoresistance p-n junction device.
The objective of the invention is to be to overcome the defective of above-mentioned giant reluctivity device, for a kind of device with giant magnetoresistance p-n junction is provided; For a kind of barium titanate doping with p-n junction and lanthanum manganese oxygen doping giant reluctivity device that is widely used in magnetic detection, magnetic measurement, magnetic control system or magneto-electronics aspect is provided, or the tandem of forming by it and the giant magnetoresistance p-n junction device and the preparation method of multielement array.
Strontium titanate doping provided by the invention and lanthanum manganese oxygen doping giant reluctivity device comprise: substrate, electrode and lead-in wire; It is characterized in that: have one or more p-n junction structures on substrate at least, this p-n junction structure is arranged on the substrate by a p type lanthanum manganese oxygen doping epitaxial loayer or n type strontium titanate doping epitaxial loayer and n type strontium titanate doping epitaxial loayer and p type lanthanum manganese oxygen doping epitaxial loayer alternative stacked; Electrode is arranged on uppermost epitaxial loayer and the substrate, or is arranged on uppermost epitaxial loayer and on the ground floor epitaxial loayer on the substrate, connects lead-in wire on the electrode.
Described giant reluctivity device can be a unit, and also being included in has 2 above giant reluctivity device unit on the substrate; Perhaps between the giant reluctivity device unit by electrode and the lead-in wire serial or parallel connection.
Described substrate comprises: the backing material of conduction and nonconducting backing material; Wherein Dao Dian backing material comprises: single crystalline substrate such as strontium titanate doping, lanthanum manganese oxygen doping single crystalline substrate, Si, Ge or GaAs; Nonconducting backing material comprises: SrTiO
3, BaTiO
3, LaAlO
3, ZrO
2Or LAST single crystalline substrate such as (La Sate).
The La that described p type lanthanum manganese oxygen doping layer choosing has magnetic characteristic
1-xA
xMnO
3, wherein A comprise Sr, Ca, Ba, Pb, Sn, Te, Nb or, Sb or Ta; Its x value is 0.01～0.4;
Described n type strontium titanate doping layer selects SrD
yTi
1-yO
3Or Sr
1-yLa
yTiO
3, wherein D comprises Nb, Sb or Ta, its y value is 0.005～0.4.
The thickness of described n type strontium titanate doping layer and p type lanthanum manganese oxygen doping layer can be identical with the number of plies, also can be different; Wherein layer thickness is 8 -1 μ; Wherein n type strontium titanate doping layer is at least the number of plies of the above and p type lanthanum manganese oxygen doping layer of one deck at least also for more than one deck.
The preparation method of giant reluctivity device provided by the invention may further comprise the steps:
1. select La with magnetic characteristic
1-xA
xMnO
3Make p type lanthanum manganese oxygen doping 2, wherein A comprises Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb or Ta; The x value is 0.01～0.4; Select SrD
yTi
1-yO
3Or Sr
1-yLa
yTiO
3Make n type strontium titanate doping 3, wherein D is Nb or Sb or Ta, and the y value is 0.005～0.4;
2. select backing material and clean substrate standby; Described substrate comprises: the backing material of conduction and nonconducting backing material; Wherein Dao Dian backing material comprises: single crystalline substrate such as strontium titanate doping, lanthanum manganese oxygen doping single crystalline substrate, Si, Ge or GaAs; Nonconducting backing material comprises: SrTiO
3, BaTiO
3, LaAlO
3, ZrO
2Or LAST single crystalline substrate such as (La Sate).
3. utilize and carry out the strontium titanates alternative stacked epitaxial growth that lanthanum manganese oxygen material that the p type mixes and n type mix on the substrate of conventional film-forming method after step 1 is cleaned and be in the same place;
4. prepare electrode and lead-in wire with conventional method, strontium titanate doping and lanthanum manganese oxygen doping giant magnetoresistance p-n junction device are prepared in encapsulation then.
Comprise that also step 4 is by conventional photoetching and lithographic method, the giant reluctivity device unit that has one or more p-n junction structures on a substrate that this above-mentioned steps 2 is obtained carries out etching, etch into nonconducting substrate place, obtain the giant reluctivity device that on a substrate, has a plurality of p-n junction structures; Prepare electrode and lead-in wire with conventional method, and the giant reluctivity device of a plurality of p-n junction structures is formed series connection or in parallel array formula giant reluctivity device by contact conductor.
Described conventional film-forming method comprises: film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, molecular beam epitaxy, magnetron sputtering, electron beam evaporation or viscose process.
Described conventional film-forming method condition is: the heated substrate temperature: 500 ℃-900 ℃, oxygen is pressed: 10
-4Pa-100Pa, growth rate: 5 -500 /minute condition and range in, select the best growing condition, to guarantee the good epitaxial growth of film and to obtain good p-n access node face.Strontium titanates (3) the alternative stacked extension of the lanthanum manganese oxygen material (2) of p type doping and the doping of n type together.
The invention has the advantages that:
The present invention selects lanthanum manganese oxygen doping with p type and giant magnetoresistance characteristic and the strontium titanate doping with n type characteristic for use, utilize masking technique and method, p type lanthanum manganese oxygen material that mixes and the strontium titanates alternative stacked extension that the n type mixes are in the same place, utilize semiconductor technology, prepare multiple unit, tandem or multielement array giant magnetoresistance p-n junction device.Our experimental result shows, unit provided by the invention, tandem and multielement array strontium titanate doping and lanthanum manganese oxygen doping giant magnetoresistance p-n junction device, made full use of this p-n junction and had the advantages that giant magnetoresistance characteristic and forward and reverse electric current have the same magnetic modulating characteristic, a plurality of p-n junction series connection, it is a kind of highly sensitive magnetic function element of many p-n junctions structure, even under room temperature and low-intensity magnetic fields, also still have very high sensitivity, can be widely used in magnetic detection, magnetic measurement and magnetic control system.Especially its epitaxial growth is on single crystalline substrate, in addition can epitaxial growth on single crystalline substrate such as Ge, Si, GaAs, be convenient to electronics device integratedly, thereby aspect magneto-electronics, also be widely used.
Description of drawings
Fig. 1 is the giant reluctivity device cellular construction schematic diagram that the present invention uses conductive substrates
Fig. 2 is the unit giant reluctivity device structural representation that the present invention uses a plurality of p-n junction structures of having of conductive substrates
Fig. 3 is the present invention's tandem giant reluctivity device structural representation on a conductive substrates
Fig. 4 is the multielement array formula structural representation that the present invention has a plurality of unit giant reluctivity device to compose in parallel on a conductive substrates
Fig. 5 is the structural representation of the present invention at the unit of non-conductive substrate giant reluctivity device
Fig. 6 is the multielement array formula structural representation that the present invention has a plurality of unit giant reluctivity device to compose in parallel on non-conductive substrate
Fig. 7 is the present invention's a plurality of unit giant reluctivity device series-mode frame schematic diagram on non-conductive substrate
Fig. 8 measures its magnetic characteristic with superconducting quantum interference device, and under the 300K condition, the p-n junction forward current is with the I-V curve of changes of magnetic field
Fig. 9 measures its magnetic characteristic with superconducting quantum interference device, and under the 100K condition, the p-n junction forward current is with the I-V curve of changes of magnetic field
Illustration is the I-V curve of p-n junction reverse current with changes of magnetic field among Fig. 8-9
Figure 10 measures its magnetic characteristic with superconducting quantum interference device, and under the 77K condition, the p-n junction electric current is with the I-V curve of changes of magnetic field; Illustrate that different doped p-n knot has giant magnetoresistance effect equally.
Figure 11 is under the 100K condition, and this device p-n junction electric current is with the I-V curve of changes of magnetic field; Tandem p-n junction giant reluctivity device is described, has high sensitivity for magnetic field.
Drawing is described as follows:
The 1-conductive substrates; 2-lanthanum manganese oxygen doping (or strontium titanate doping);
3-strontium titanate doping (or lanthanum manganese oxygen doping); The 4-electrode;
The 5-lead-in wire; The non-conductive substrate of 6-.
Embodiment
Make a use conductive substrates of the present invention, have the giant reluctivity device of a p-n junction by Fig. 1, use laser molecular beam epitaxy, choose underlayer temperature: 650 ℃, oxygen is pressed: 5 * 10
-2Pa, growth rate: 10 /minute growth conditions.At SrNb
0.01Ti
0.99O
3Monocrystalline conductive substrates 1 on the thick La of epitaxial growth 350nm
0.9Sr
0.1MnO
3Layer 2 cuts into the unit tube core of 1mm * 1mm to epitaxial wafer, and electrode 4 is arranged on conductive substrates 1 and La
0.9Sr
0.1MnO
3On the layer 2, the copper cash of 0.2mm is welded on the electrode 4 as lead-in wire 5, is prepared into unit giant magnetoresistance p-n junction device shown in Figure 1 with indium.
Measure its magnetic characteristic with superconducting quantum interference device, Fig. 8 is under the 300K condition, and the p-n junction forward current is with the I-V curve of changes of magnetic field; Fig. 9 is under the 100K condition, and the p-n junction forward current is with the I-V curve of changes of magnetic field.Illustration is the I-V curve of p-n junction reverse current with changes of magnetic field among the figure.Can find out that from Fig. 8 and Fig. 9 the p-n junction electric current is had giant magnetoresistance effect by magnetic field modulation, and forward and reverse magnetic characteristic is consistent.Even room temperature still has very high sensitivity for magnetic field.
Press embodiment 1 and make, just use La
0.85Te
0.15MnO
3Replace La
0.9Sr
0.1MnO
3, its La
0.85Te
0.15MnO
3The thickness of epitaxial loayer is 400nm, and other structure is prepared into and has only a unit giant magnetoresistance p-n junction device on a substrate with embodiment 2.
Figure 10 is under the 77K condition, and the pn junction current is with the I-V curve of changes of magnetic field.Illustrate that different doped p-n knot has giant magnetoresistance effect equally.
Make a unit giant magnetoresistance p-n junction device with many p-n junctions structure by Fig. 2.Use laser molecular beam epitaxy, at underlayer temperature: 630 ℃, oxygen is pressed: 1 * 10
-3Pa, growth rate: under 20 /minute condition.At SrNb
0.01Ti
0.99O
3The La of monocrystalline conductive substrates 1 superimposed layer epitaxial growth 80nm
08Sr
0.2MnO
3Layer 2, the SrNb of 50nm
0.05Ti
0.95O
3Layer 3, the La of 80nm
08Sr
0.2MnO
3Layer 2, the SrNb of 50nm
0.05Ti
0.95O
3Layer 3, all the other structures are with embodiment 1.
Figure 11 is under the 100K condition, and this device p-n junction electric current is with the I-V curve of changes of magnetic field; Tandem p-n junction giant reluctivity device is described, has high sensitivity for magnetic field.
Use magnetically controlled sputter method, at underlayer temperature: 700 ℃, air pressure (oxygen: argon=1: 1): 30Pa, growth rate: under the 30 conditions, at SrNb
0.1Ti
0.9O
320 thick La of cycle 20nm of single crystalline substrate 1 superimposed layer epitaxial growth
08Ca
0.2MnO
32 and the thick SrSb of 10nm
0.1Ti
0.9O
33.Be etched in etching 0.3mm * 0.3mm on the epitaxial wafer with the particle beams, the unit giant magnetoresistance tube core of spacing 0.1mm, the electrode 4 that on each tube core, prepares 0.2mm * 0.2mm with photoetching and chemical corrosion, two die separation are become one, electrode from two tube cores connects lead-in wire 5, prepares in-line giant magnetoresistance p-n junction device shown in Figure 3.
Press the unit giant magnetoresistance tube core that embodiment 5 methods are made, 10 die separation of every row are become one, electrode 4 electrodes connection lead-in wire 5 from 10 tube cores is made the unit lead-in wire, makes public electrode from the electrode 4 connection lead-in wires 5 of substrate 1, prepares alignment formula giant magnetoresistance p-n junction device shown in Figure 4.
Use pulsed laser deposition, choose oxygen and press: 100pa, underlayer temperature: 900 ℃, growth rate: 500 /minute growth conditions.At SrTiO
3The n type SrNb that at first extension 300nm is thick on the substrate 6
0.4Ti
0.6O
32, again at n type SrNb
0.4Ti
0.6O
3Go up the alternately thick p type La of 10 cycle 100nm of extension
0.75Sr
0.25MnO
33 and the thick n type SrNb of 100nm
0.1Ti
0.9O
32.Use particle beams etching, the unit giant reluctivity device of etching diameter 0.5mm, spacing 1.5mm etches into SrTiO on epitaxial wafer
3The n type SrNb that 300nm is thick on the substrate 6
0.4Ti
0.6O
3Till 3 layers.The about 200nm thick gold membrane of vacuum evaporation with photoetching and chemical corrosion method, respectively prepares the electrode 4 of diameter 0.3mm on first epitaxial loayer 2 on the tube core of diameter 0.5mm and 1.5mm spacing place then.The epitaxial wafer for preparing is become singulated dies along die separation, on the gold film electrode 4 of diameter 0.3mm, connect lead-in wire 5, prepare unit giant magnetoresistance p-n junction device shown in Figure 5 with spot welding machine.
Use laser molecular beam epitaxy, choose underlayer temperature: 560 ℃, oxygen is pressed: 1 * 10
-4Pa (containing 10% elemental oxygen), growth rate: 30 /minute growth conditions.The n type SrNb that at first extension 500nm is thick on SrTiO3 substrate 6
0.4Ti
0.6O
32, again at n type SrNb
0.4Ti
0.6O
3Go up the alternately thick p type La of 10 cycle 100nm of extension
0.75Sr
0.25MnO
33 and the thick n type SrNb of 100nm
0.1Ti
0.9O
32.Use particle beams etching, the unit giant reluctivity device of etching 1mm * 1mm, spacing 1.5mm etches into SrTiO on epitaxial wafer
3The n type SrNb that 500nm is thick on the substrate 6
0.4Ti
0.6O
3Till 3 layers.The about 200nm gold of vacuum evaporation film with photoetching and chemical corrosion method, respectively prepares the electrode 4 of diameter 0.5mm on first epitaxial loayer 2 on the tube core of 1mm * 1mm and 1.5mm spacing place then.It is one group that the epitaxial wafer for preparing is cut into 8 singulated dies, connects lead-in wire 5 with spot welding machine on the gold film electrode 4 of diameter 0.5mm, prepares multielement array formula giant magnetoresistance p-n junction device shown in Figure 6.Also comprise and to use MgO or ZrO
2Or LAST makes substrate.
Embodiment 11.
Embodiment 12.
Embodiment 13.
Use the laser molecular beam epitaxy method, be heated to temperature be on substrate: 630 ℃, oxygen is pressed: 1 * 10
-4Pa (containing 12% elemental oxygen), growth rate: 25 /minute condition under, select for use 2 inches doped single crystal Si to make substrate 1, make resilient coating with SrO, 50 thick SrNb of cycle 5nm of extension
0.15Ti
0.85O
32 and the thick p type La of 10nm
0.8Ba
0.2MnO
33, with the particle beams etching epitaxial wafer is etched into 1mm * 1mm, the unit tube core of spacing 0.2, with sputtering method and photoetching technique, the electrode 4 of preparation diameter 0.5mm on tube core, cut into 20 tube core fritters of the 20 every rows of row, make the unit lead-in wire, make public electrode from the electrode 4 connection lead-in wires 5 of Si substrate from the electrode 4 connection lead-in wires 5 of 400 tube cores.Prepare 20 * 20 multielement array formula giant magnetoresistance p-n junction devices shown in Figure 4.
Embodiment 14.
Press embodiment 14 and make, use molecular beam epitaxy technique, select for use 4 inches monocrystalline Ge to make substrate.
Embodiment 15.
With the preparation of laser molecular beam epitaxy method, its extension condition is: choose the heated substrate temperature: 700 ℃, oxygen is pressed: 5 * 10
-2Pa, growth rate: 50 /minute growth conditions.At SrNb
0.05Ti
0.95O
3On the substrate 1, the p type La that 8 cycle 150nm of extension are thick
0.7Pb
0.3MnO
32 and the thick n type SrSb of 30nm
0.3Ti
0.7O
33, with photoetching and particle beams etching, preparation diameter 0.6mm, the unit tube core of spacing 0.2mm.Per two die separation are become a fritter, use photoetching and chemical corrosion aluminium electrode 4, connect lead-in wire 5 from electrode 4, prepare tandem giant magnetoresistance p-n junction device shown in Figure 3 with press welder at each die preparation diameter 0.2mm.
Embodiment 16.
Press embodiment 15 and make, with p type La
0.9Sn
0.1MnO
3Replace p type La
0.7Pb
0.3MnO
3Or with p type La
0.9Sb
0.1MnO
3Replace p type La
0.7Pb
0.3MnO
3Or with p type La
0.65Ta
0.35MnO
3Replace p type La
0.7Pb
0.3MnO
3
Embodiment 17.
Press embodiment 15 and make, with p type La
0.9Nb
0.1MnO
3Replace p type La
0.7Pb
0.3MnO
3
Embodiment 18.
Press embodiment 15 and make, with n type SrTa
0.005Ti
0.995O
3Replace n type SrSb
0.3Ti
0.7O
3
Embodiment 19.
Press embodiment 15 and make, with n type Sr
0.95La
0.05TiO
3Replace n type SrSb
0.3Ti
0.7O
3; Or make substrate with GaAs substrate replacement single crystalline Si and make.
Embodiment 20.
Claims (9)
1, a kind of strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device comprise: substrate, electricity and lead-in wire; It is characterized in that: have one or more p-n junction structures on substrate at least, this p-n junction structure has a p type lanthanum manganese oxygen doping epitaxial loayer or n type strontium titanate doping epitaxial loayer and n type strontium titanate doping epitaxial loayer and p type lanthanum manganese oxygen doping epitaxial loayer alternative stacked to be arranged on the substrate; Electrode is arranged on uppermost epitaxial loayer and the substrate, or is arranged on uppermost epitaxial loayer and on the ground floor epitaxial loayer on the substrate, connects lead-in wire on the electrode.
2, by described strontium titanate doping of claim 1 and lanthanum manganese oxygen doping giant reluctivity device, it is characterized in that: described giant reluctivity device can be a unit, also being included in has 2 above giant reluctivity device unit on the substrate, and forms the array giant reluctivity device by electrode and lead-in wire serial or parallel connection between the giant reluctivity device unit.
3, by claim 1 or 2 described strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity devices, it is characterized in that: described substrate comprises: the backing material of conduction and nonconducting backing material; Wherein Dao Dian backing material comprises: strontium titanate doping, lanthanum manganese oxygen doping single crystalline substrate, Si, Ge or GaAs single crystalline substrate; Nonconducting backing material comprises: the special single crystalline substrate in strontium titanates, barium titanate, lanthanum aluminate, zirconia or Lhasa.
4, by claim 1 or 2 described strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity devices, it is characterized in that: described p type lanthanum manganese oxygen doping layer comprises: the La with magnetic characteristic
1-xA
xMnO
3, A comprises Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb or Ta in its Chinese style; Its x value is 0.01～0.4.
5, by claim 1 or 2 described strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity devices, it is characterized in that: described n type strontium titanate doping layer comprises: SrD
yTi
1-yO
3Or Sr
1-yLa
yTiO
3, D comprises Nb, Sb or Ta in its Chinese style, its y value is 0.005～0.4.
6. by claim 1 or 2 described strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity devices, it is characterized in that: the thickness of described n type strontium titanate doping layer and p type lanthanum manganese oxygen doping layer can be identical with the number of plies, also can be different; Wherein layer thickness is 8 -1 μ.
7. method for preparing described strontium titanate doping of claim 1 and lanthanum manganese oxygen doping giant reluctivity device is characterized in that: may further comprise the steps:
(1) selects La with magnetic characteristic
1-xA
xMnO
3Make p type lanthanum manganese oxygen doping 2, wherein A comprises Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb or Ta; The x value is 0.01～0.4; Select SrD
yTi
1-yO
3Or Sr
1-yLa
yTiO
3Make n type strontium titanate doping 3, wherein D is Nb or Sb or Ta, and the y value is 0.005～0.4;
(2) select backing material and to clean substrate standby; Described substrate comprises: the backing material of conduction and nonconducting backing material; Wherein Dao Dian backing material comprises: strontium titanate doping, lanthanum manganese oxygen doping single crystalline substrate, Si, Ge or GaAs single crystalline substrate; Nonconducting backing material comprises: the special single crystalline substrate in strontium titanates, barium titanate, lanthanum aluminate, zirconia or Lhasa;
(3) utilize and carry out the strontium titanates alternative stacked epitaxial growth that lanthanum manganese oxygen material that the p type mixes and n type mix on the substrate of conventional film-forming method after step 1 is cleaned and be in the same place;
(4) prepare electrode and lead-in wire with conventional method, barium titanate doping and lanthanum manganese oxygen doping giant magnetoresistance p-n junction device are prepared in encapsulation then.
8. by the described method for preparing strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device of claim 7, it is characterized in that: comprise that also step 5 is by conventional photoetching and lithographic method, the giant reluctivity device unit that has one or more p-n junction structures on a substrate that this above-mentioned steps 3 is obtained carries out etching, etch into nonconducting substrate place, obtain the giant reluctivity device that on a substrate, has a plurality of p-n junction structures; Prepare electrode and lead-in wire with conventional method again, and the giant reluctivity device of a plurality of p-n junction structures is formed series connection or in parallel array formula giant reluctivity device by contact conductor.
9. by claim 7 or the 8 described methods that prepare strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device, it is characterized in that: described conventional film-forming method comprises: laser molecular beam epitaxy, pulsed laser deposition, molecular beam epitaxy, magnetron sputtering, electron beam evaporation or viscose process.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369222C (en) * | 2004-07-13 | 2008-02-13 | 中国科学院物理研究所 | La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method |
| CN100573060C (en) * | 2005-05-24 | 2009-12-23 | 中国科学院物理研究所 | A kind of quick response broadband optical detector |
| CN100593110C (en) * | 2005-05-24 | 2010-03-03 | 中国科学院物理研究所 | Photoelectric detector with high sensitivity |
| CN110828316A (en) * | 2019-11-01 | 2020-02-21 | 苏州科技大学 | Preparation method of strontium titanate surface electron gas PN junction |
| CN111398879A (en) * | 2020-03-09 | 2020-07-10 | 兰州大学 | Novel method based on p-n junction photo-induced magneto-resistive sensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
| WO1998014322A1 (en) * | 1996-10-04 | 1998-04-09 | Northwestern University | Doped barium/strontium titanate thin films and method of doping |
| US6128178A (en) * | 1998-07-20 | 2000-10-03 | International Business Machines Corporation | Very thin film capacitor for dynamic random access memory (DRAM) |
| CN2574226Y (en) * | 2002-09-27 | 2003-09-17 | 中国科学院物理研究所 | Doped strontium titanate and doped La-Mn-O huge magnetoresistance device |
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2002
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369222C (en) * | 2004-07-13 | 2008-02-13 | 中国科学院物理研究所 | La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method |
| CN100573060C (en) * | 2005-05-24 | 2009-12-23 | 中国科学院物理研究所 | A kind of quick response broadband optical detector |
| CN100593110C (en) * | 2005-05-24 | 2010-03-03 | 中国科学院物理研究所 | Photoelectric detector with high sensitivity |
| CN110828316A (en) * | 2019-11-01 | 2020-02-21 | 苏州科技大学 | Preparation method of strontium titanate surface electron gas PN junction |
| CN111398879A (en) * | 2020-03-09 | 2020-07-10 | 兰州大学 | Novel method based on p-n junction photo-induced magneto-resistive sensor |
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| CN100438114C (en) | 2008-11-26 |
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