CN1142595C - semiconductor and lanthanum manganate p-n junction - Google Patents
semiconductor and lanthanum manganate p-n junction Download PDFInfo
- Publication number
- CN1142595C CN1142595C CNB011044608A CN01104460A CN1142595C CN 1142595 C CN1142595 C CN 1142595C CN B011044608 A CNB011044608 A CN B011044608A CN 01104460 A CN01104460 A CN 01104460A CN 1142595 C CN1142595 C CN 1142595C
- Authority
- CN
- China
- Prior art keywords
- type
- junction
- manganate
- silicon
- mno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- HBAGRTDVSXKKDO-UHFFFAOYSA-N dioxido(dioxo)manganese lanthanum(3+) Chemical compound [La+3].[La+3].[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O.[O-][Mn]([O-])(=O)=O HBAGRTDVSXKKDO-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- 229910052788 barium Inorganic materials 0.000 claims abstract description 3
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 3
- 229910052745 lead Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 3
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- LBSANEJBGMCTBH-UHFFFAOYSA-N manganate Chemical compound [O-][Mn]([O-])(=O)=O LBSANEJBGMCTBH-UHFFFAOYSA-N 0.000 claims description 28
- 238000002360 preparation method Methods 0.000 claims description 24
- 238000002156 mixing Methods 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 47
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- 238000001451 molecular beam epitaxy Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052746 lanthanum Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002148 La0.6Sr0.4MnO3 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Bipolar Transistors (AREA)
Abstract
The invention relates to the field of electronics, in particular to a series of novel p-n junctions. The invention uses p-type lanthanum manganate La1-xAxMnO3Film material (wherein A is Ca or Sr or Ba or Pb or Sn) or n-type lanthanum manganate La1-xBxMnO3(wherein B is Te or Nb or Sb or Ta), all the values of x are in the range of 0.005-0.5, and the structure is laminated with n-type or p-type semiconductor materials (selectively doped silicon or germanium or gallium arsenide) to prepare p-n junction, p-p junction, n-n junction, p-n-p junction, n-p-n junction and the like of the semiconductor and lanthanum manganate. The invention has simple manufacturing process and good stability, and can be widely applied to electronic devices.
Description
The invention belongs to person in electronics, particularly a series of novel p-n junctions.
The discovery of germanium silicon p-n junction makes Human's production, work and life that revolutionary great variety take place.Lanthanum manganate (the LaMnO that mixes
3) be functional material (document 1:Ken-ichi Chahara, Toshiyuki Ohno, Masahiro Kafai andYuzoo Kozono, Appl.Phys.Lett.63,1990 (1993) with giant magnetoresistance characteristic; Document 2:S.Jin, T.H.Tiefel, M.McCormack, R.A.Fastnacht, R.Ramesh, and L.H.Chen, Science 264,423 (1994)), it has caused people's interest and attention (document 3:M.Rajeswari in the application of aspects such as magnetic recording, magnetic head and transducer, A.Goyal, A.K.Raychaudhuri, M.C.Robson, G.C.Xiong, C.Kwon, R.Ramesh, R.LGreene and T.Venkatesan, Appl.Phys.Lett.69,851 (1996)).The patent of the giant magnetic resistance p-n junction structure that we have applied for (document 6: number of patent application: 98101982.X) also prepared perovskite structure oxide Darlington (document 7: number of patent application: 00100367.4).
The object of the present invention is to provide a series of the have semiconductor of extensive use and the p-n junctions of lanthanum manganate, wherein semiconductor is silicon or germanium or GaAs.P-n junction provided by the invention comprises polycrystalline, monocrystalline, the multiple structures such as compound diode, triode, many base stages triode and multi-emitter triode that amorphous or polycrystalline, monocrystalline and amorphous alternately mix.The present invention can be widely used in electronics circuit.
The object of the present invention is achieved like this:
Become example with silicon and lanthanium manganate p-n, adopt the displacement doping method, use film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, magnetron sputtering, electron beam evaporation, molecular beam epitaxy, chemical deposition or vapor phase epitaxy, preparation p type lanthanum manganate La
1-xA
xMnO
3Thin-film material, wherein A is Ca or Sr or Ba or Pb or Sn; Preparation n type lanthanum manganate La
1-xB
xMnO
3, wherein B is Te or Nb or Sb or Ta.The span of all x is 0.005～0.5.
One deck n type lanthanum manganate is grown on the p type silicon substrate, or one deck p type lanthanum manganate is grown on the n type silicon substrate, then at p-n junction of formation at the interface of lanthanum manganate and silicon.
One deck n type lanthanum manganate is grown on the n type silicon substrate different with its carrier concentration, then on the interface of lanthanum manganate and silicon, forms a n-n junction.
One deck p type lanthanum manganate is grown on the p type silicon substrate different with its carrier concentration, then on the interface of lanthanum manganate and silicon, forms a p-p knot.
Equally, also the silicon growth of n type or p type can be formed p-n, n-n, p-p knot on n type or p type lanthanum manganate substrate or film.
The lanthanum manganate and the silicon of n type or p type are carried out the growth of three layer laminate by the structure of npn or pnp, can form n-p-n knot and p-n-p knot, be used for preparing n-p-n and p-n-p triode.Therefore, n-p-n knot and p-n-p knot for silicon and lanthanum manganate have silicon/lanthanum manganate/lanthanum manganate, silicon/silicon/lanthanum manganate, silicon/lanthanum manganate/silicon and lanthanum manganate/silicon/different structures such as lanthanum manganate.
The p-n junction of lanthanum manganate and silicon and germanium silicon p-n junction are similar, can design as required, and both can be planar growth, also can be selective area growth forms, can also be corrosion or etching form.The lanthanum manganate and the silicon thin film of preparation p-n junction lamination or selective area growth can be polycrystalline, amorphous, and monocrystalline also can be the alternatively mixing and the growth of polycrystalline, amorphous or monocrystalline.Drawing and encapsulating of lanthanum manganate and silicon p-n junction can be used the existing device and the technology of silicon germanium bipolar transistor fully, adopts photoetching, corrosion or etching, electrode evaporation.As needs and silicon transistor first deposit one deck SiO before the etching lead-in wire
2The same, at the upper surface growth dielectric isolation layer of lanthanum manganate and silicon p-n junction or p-p knot or n-n junction or p-n-p knot or n-p-n knot film.Dielectric isolation layer can be SiO
2Or SrTiO
3Or ZrO
2Or BaTiO
3Or LaAlO
3Or Al
2O
3, and then etch and draw electrode hole, evaporated metal layer, photoetching, etching lead-in wire, encapsulation also can be adopted the existing shell of germanium silicon circuit.
Same as above, replace silicon with germanium or GaAs, just can prepare the different structures such as p-n junction, p-p knot, n-n junction, p-n-p knot, n-p-n knot of germanium or GaAs and lanthanum manganate.
The manufacture craft of the p-n junction of semiconductor provided by the invention and lanthanum manganate is simple, and good stability will become a kind of electronic device with characteristics and extensive use.
The present invention will be further described below in conjunction with drawings and Examples:
Fig. 1 is La
0.7Sr
0.3MnO
3(p)/Si (n) structure p-n junction volt-ampere of characteristic diode curve,
Fig. 2 is La
0.8Te
0.2MnO
3(n)/Si (p) structure p-n junction volt-ampere of characteristic diode curve,
Fig. 3 is La
0.7Sr
0.3MnO
3(p)/Si (p) structure p-p junction diode volt-ampere characteristic.
Using laser molecular beam epitaxy, is 2～6 Ω .cm in resistivity, the thick amorphous La of growth 250nm on 2 inches single-sided polishing n type single crystalline Si substrates
0.7Sr
0.3MnO
3Film cuts into the tube core of 1mm * 1mm with the Si substrate of the film of having grown, and does electrode in the upper and lower surface of each tube core with the indium 0.1mm copper wire of burn-oning respectively, prepares silicon and lanthanium manganate p-n junction diode.
Fig. 1 is the volt-ampere characteristic that above-mentioned diode records.
Press embodiment 1 and make, use La
0.95Ca
0.05MnO
3Replace La
0.7Sr
0.3MnO
3Epitaxial growth prepares silicon and lanthanium manganate p-n junction crystal diode on n type Si substrate.
Press embodiment 1 and make, use the magnetron sputtering film-forming method, preparation silicon and lanthanium manganate p-n junction diode.
Embodiment 4
Press embodiment 1 and make, use molecular beam epitaxial method, the thick La of epitaxial growth 200nm on n type Si substrate
0.5Ba
0.5MnO
3Film, preparation silicon and lanthanium manganate p-n crystal diode.
Using laser molecular beam epitaxy, is 0.1～0.5 Ω cm in resistivity, the thick La of growth 300nm on the p type single crystalline Si substrate of 3 inches single-sided polishings
0.8Te
0.2MnO
3Film, preparation silicon and lanthanium manganate p-n diode.
Fig. 2 is the volt-ampere characteristic that above-mentioned diode records.
Embodiment 6
Using laser molecular beam epitaxy, is 0.1～0.5 Ω cm in resistivity, the thick La of growth 800nm on the p type single crystalline Si substrate of 3 inches single-sided polishings
0.98Nb
0.02MnO
3Film, preparation silicon and lanthanium manganate p-n diode.
Embodiment 8
Using laser molecular beam epitaxy, is 1～5 Ω cm in resistivity, the thick La of growth 500nm on the p type single crystalline Si substrate of 3 inches single-sided polishings
0.8Sb
0.2MnO
3Film, preparation silicon and lanthanium manganate p-n diode.
Embodiment 9
Using laser molecular beam epitaxy, is 100～150 Ω cm in resistivity, the thick La of growth 300nm on the p type single crystalline Si substrate of 3 inches single-sided polishings
0.55Ta
0.45MnO
3Film, preparation silicon and lanthanium manganate p-n diode.
Using laser molecular beam epitaxy, is the thick La of growth 800nm on the p type single crystalline Si substrate of 2 inches single-sided polishings of 2～6 Ω cm in resistivity
0.7Sr
0.3MnO
3Preparation silicon and lanthanum manganate p-p diode.
Fig. 3 is the volt-ampere characteristic that above-mentioned diode records.
Embodiment 11
Use magnetron sputtering method, La
0.99Pb
0.01MnO
3Being grown in resistivity is on the p type Si substrate of 0.03～0.08 Ω cm, preparation silicon and lanthanium manganate p-n diode.
Embodiment 12
Use the pulsed laser deposition method, La
0.8Sn
0.2MnO
3Being grown in resistivity is on the p type monocrystalline silicon of 200～250 Ω cm, preparation silicon and lanthanum manganate p-p junction diode.
Embodiment 13
Press embodiment 1 and make, prepare silicon and lanthanium manganate p-n junction diode with chemical deposition.
Embodiment 14
Pressing embodiment 1 and make, is 2 inches n type germanium replacement silicon of 2～6 Ω cm with resistivity, preparation germanium and lanthanium manganate p-n junction diode.
Pressing embodiment 1 and make, is 2 inches n p type gallium arensideps replacement silicon of 2～6 Ω cm with resistivity, preparation GaAs and lanthanium manganate p-n junction diode.
Embodiment 16
Use laser molecular beam epitaxy, selecting resistivity for use is 0.2～0.5 Ω cm, and 4 inches n type single crystalline Si are done the emitter e of substrate and triode, the thick La of growth 500nm on n type Si
0.9Sr
0.1MnO
3Be base stage b, again at La
0.9Sr
0.1MnO
3Last growth carrier concentration is about 10
17N type Si be collector electrode c.Etch the semicircular ring base stage b electrode hole of circular collector electrode c of φ 30 μ m and φ 40～50 μ m respectively with the method for photoetching and particle beams etching, at the good film surface of the etching SiO of deposit 500nm again
2Do the insulation separator, at separator SiO
2Last photoetching and etch contact conductor, the pressure welding lead-in wire, the tube sealing shell is prepared into silicon and lanthanum manganate n-p-n triode.
Embodiment 17
Press embodiment 16 preparations, around collector electrode c, prepare 3 base stage b, be prepared into many base silicon and lanthanum manganate n-p-n triode.
Embodiment 18
Pressing embodiment 16 preparations, is 4 inches n type germanium replacement n type Si of 0.02～0.05 Ω cm with resistivity, preparation germanium and lanthanum manganate n-p-n triode.
Embodiment 19
Pressing embodiment 16 preparations, is 2 inches n p type gallium arensideps replacement n type Si of 0.2～0.5 Ω cm with resistivity, preparation GaAs and lanthanum manganate n-p-n triode.
Use molecular beam epitaxy, selecting resistivity for use is that 4 inches p type Si of 0.01～0.05 Ω cm are substrate, and does emitter e, the thick La of extension 1 μ m on p type Si
0.85Te
0.15MnO
3Be base stage b, again at La
0.85Te
0.15MnO
3Film on the La of extension 350nm
0.95Sr
0.05MnO
3Be collector electrode c, prepare collector electrode 20 μ m * 20 μ m, the silicon of base stage 50 μ m * 50 μ m and lanthanium manganate p-n-p triode with photoetching and etching.
Embodiment 21
Press embodiment 20 and make, be about 10 with carrier concentration
21The p p type gallium arensidep replace silicon to do substrate and emitter e, and be 10 with carrier concentration
18The p p type gallium arensidep replace La
0.85Te
0.15MnO
3Be base stage b, preparation GaAs and lanthanium manganate p-n-p triode.
Embodiment 22
Use magnetically controlled sputter method, at 40mm * 40mmSrTiO
3The La of extension 800nm at first in the substrate
0.99Ca
0.01MnO
3Film is collector electrode c, at La
0.99Ca
0.01MnO
3Extension 350nm carrier concentration about 10 on the film
17N type Si be base stage b, the La of extension 400nm on n type Si again
0.6Sr
0.4MnO
3Do emitter e.SrTiO with 500nm
3Do the insulation separator, prepare electrode and lead-in wire, preparation p-n-p type silicon and lanthanum manganate transistor with photoetching and particle beams etching.
Embodiment 23
Press embodiment 22 and make, 3 emitter e of etching, preparation multi-emitter silicon and lanthanium manganate p-n-p triode.
Embodiment 24
Embodiment 25
Press embodiment 22 and make, with using La
0.99Sr
0.01MnO
3Film replaces La
0.99Ca
0.01MnO
3Film is collector electrode c, prepares silicon and lanthanium manganate p-n-p triode with magnetron sputtering method.
Embodiment 26
Press embodiment 22 and make, be about 10 with carrier concentration
21P type silicon replace La0.6Sr0.4MnO3 to do emitter e, preparation silicon and lanthanium manganate p-n-p triode.
Claims (2)
1. semiconductor and lanthanium manganate p-n junction is characterized in that: silicon or germanium or the GaAs of the semiconductor of n type and p type for mixing; P type lanthanum manganate is La
1-xA
xMnO
3, wherein A is Ca or Sr or Ba or Pb or Sn, n type barium titanate is La
1-xB
xMnO
3, wherein B is Te or Nb or Sb or Ta, X=0.005～0.5; This p type or n type lanthanum manganate and this n type or p N-type semiconductor N are carried out layer-by-layer growth, and the preparation semiconductor is tied with lanthanium manganate p-n junction, p-p knot, n-n junction, n-p-n knot, p-n-p.
2. by described semiconductor of claim 1 and lanthanium manganate p-n junction, it is characterized in that: selected lanthanum manganate and semi-conducting material are polycrystalline, amorphous, the mixed material of monocrystalline or polycrystalline, amorphous and monocrystalline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011044608A CN1142595C (en) | 2001-02-27 | 2001-02-27 | semiconductor and lanthanum manganate p-n junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011044608A CN1142595C (en) | 2001-02-27 | 2001-02-27 | semiconductor and lanthanum manganate p-n junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1371138A CN1371138A (en) | 2002-09-25 |
| CN1142595C true CN1142595C (en) | 2004-03-17 |
Family
ID=4653922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011044608A Expired - Fee Related CN1142595C (en) | 2001-02-27 | 2001-02-27 | semiconductor and lanthanum manganate p-n junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1142595C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100369222C (en) * | 2004-07-13 | 2008-02-13 | 中国科学院物理研究所 | La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method |
| CN100422702C (en) * | 2004-07-16 | 2008-10-01 | 中国科学院物理研究所 | Fast response broad frequency range laser detector made of hetero-junctions material |
| CN100437055C (en) * | 2004-07-20 | 2008-11-26 | 中国科学院物理研究所 | Fast response broad band laser detector made by oxide heterojunction material |
-
2001
- 2001-02-27 CN CNB011044608A patent/CN1142595C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1371138A (en) | 2002-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cheung et al. | Structural and electrical properties of La0. 5Sr0. 5CoO3 epitaxial films | |
| CN101276791B (en) | Semiconductor wafer and process for its production | |
| CN101689483B (en) | Nitride semi-conductor component layer structure on a group IV substrate surface | |
| CN108550675B (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN103236480B (en) | A kind of epitaxial wafer of light-emitting diode and manufacture method thereof | |
| JP2000228516A (en) | Semiconductor laminated thin film, electronic device and diode | |
| CN1274954A (en) | Film piezo-electric device | |
| CN109920889A (en) | Gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN1491299A (en) | Semiconductor crystal growing method and semiconductor light-emitting device | |
| CN101826549B (en) | Semiconductor heterostructure, preparation method thereof and semiconductor device | |
| JP2007305975A (en) | Semiconductor device containing group iii oxide semiconductor | |
| CN1165084C (en) | Semiconductor and strontium titanate p-n junction | |
| CN1473356A (en) | n-electrode for III group nitride based compound semiconductor element | |
| CN101064258A (en) | Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device | |
| CN1142595C (en) | semiconductor and lanthanum manganate p-n junction | |
| CN1157799C (en) | Semiconductor and barium titanate P-n junction | |
| CN1142594C (en) | Perovskite Structure Oxide Composite Film Transistor | |
| CN100369222C (en) | La1-xAxMnO3 thin films and heterojunction materials grown denotatively on the silicon chip and preparing method | |
| JP2768742B2 (en) | Bipolar transistor | |
| CN1129965C (en) | Strontium titanate transistor | |
| JP2000022205A (en) | Semiconductor light emitting element | |
| CN1129966C (en) | Barium titanate transistor | |
| JPH11330569A (en) | Thermoelectric transducer and its manufacture | |
| CN113964182A (en) | Heterogeneous PN low-turn-on voltage gallium oxide power diode and preparation method thereof | |
| CN2574226Y (en) | Doped strontium titanate and doped La-Mn-O huge magnetoresistance device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040317 |