CN100593110C - Photoelectric detector with high sensitivity - Google Patents
Photoelectric detector with high sensitivity Download PDFInfo
- Publication number
- CN100593110C CN100593110C CN200510071810A CN200510071810A CN100593110C CN 100593110 C CN100593110 C CN 100593110C CN 200510071810 A CN200510071810 A CN 200510071810A CN 200510071810 A CN200510071810 A CN 200510071810A CN 100593110 C CN100593110 C CN 100593110C
- Authority
- CN
- China
- Prior art keywords
- electrode
- barium titanate
- layer
- photoelectric detector
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a high-sensitivity photoelectric detector, comprising: a chip made of silicon substrate and on-silicon substrate light response layer, where the light response layer is a doped barium titanate film layer epitaxially grown on the silicon substrate; first electrode is arranged on the doped barium titanate film, second electrode is arranged on the bottom surface of the silicon substrate, contacting the air, and each electrode is connected with one end of an electrode lead, and the other end of the electrode lead is a signal output end, and two ends of a resistor are connected with the signal output ends of the two electrode leads, respectively. And it is a photovoltaic photoelectric detector, and directly generates voltage signal without any added auxiliary power supply and electronic circuit, after irradiated under light. And its response wave band is from UV to far infrared, and front edge and half width of photovoltaic pulse generated by laser pulse are -1ns and -2ns, respectively.
Description
Technical field
The present invention relates to a kind of laser detector, particularly a kind of wide spectrum laser detector of fast-response that utilizes barium titanate doping and Si heterojunction material to make.
Background technology
For the detection of laser energy, power, pulsewidth and waveform, not only extremely important to Laser Devices and fundamental research, and also have purposes very widely at aspects such as industry, military affairs and national defence.People have been developed various types of laser detectors such as thermoelectricity, photoelectricity, pyroelectricity, and as pyroelectric detector, though responding range is wide, the response time is slow, mostly is Millisecond.So people are still exploring wide spectrum, fast-response, highly sensitive new pattern laser detector always.
Barium titanate (BaTiO
3) be multifunctional material, have excellent performances such as good ferroelectric, piezoelectricity, electric light and nonlinear optical properties, the aspect such as sell off at storer, photodetection, light and have a wide range of applications.(as document 1:Origin of ferroelectricity in perovskite oxides, R.E.Chen, Nature, Vol.358,136 (1992); Document 2:Dielectric, elastic, piezoelectric, electro-optic, and elasto-optictensors of BaTiO
3Crystals, M.Zgonik, P.Bernasconi, et al., Phys.Rev.B, Vol, 50,5941 (1994) people also observe the optical pressure characteristic of the barium titanate film that is deposited on the silicon substrate, but its response time is that second-time is (as document 3, photovoltaic properties of ferroelectric BaTiO3 thin filmsrf sputter deposited on silicon, Vineet S.Dharmadhikari et al., Appl.Phys.Lett., Vol.53, No.12,8988 (1982)).Adopt the method for mixing, can obtain the doping BrTiO of different qualities
3Material, the applicant has applied for mixing barium titanate doping material patents such as In, Mn, Nb (as China Patent No.: ZL99123796.X; ZL00100058.6; ZL99108057.2), applied for that also barium titanate transistor and semiconductor and strontium titanates p-n junction patent are (as China Patent No.: ZL00100367.4; But these all are the patents based on electrology characteristic ZL01104066.1).
Summary of the invention
The objective of the invention is to overcome the slow defective of above-mentioned detector speed of photoresponse; Provide a kind of photoelectric signal that after rayed, directly produces, without any need for adding auxiliary power supply and electronic circuit.The fast-response broadband laser detector that utilizes barium titanate doping and Si heterojunction material to make, energy, power and waveform that can exploring laser light, to infrared, the width that produces potential pulse can be less than 2ns from ultraviolet for its response wave band, and the pulse full duration has only several ns.
The fast-response broadband laser detector that utilizes barium titanate doping and Si heterojunction material to make provided by the invention, comprising: p type or n type silicon chip are substrate 1; The barium titanate doping thin layer of growth one deck n type or p type is made chip on the substrate 1 of described p type or n type silicon chip; It is characterized in that: also comprise a resistance 5, first electrode 3, second electrode 4 and and two contact conductors 6; Described barium titanate doping thin layer is a light responsive material layer 2, and wherein the thickness of light responsive material layer 2 is 0.8nm～2 μ m; First electrode 3 is arranged on the light responsive material layer 2, second electrode 4 is arranged on 1 of the substrate, one end of two contact conductors 6 is connected with second electrode 4 with first electrode 3 respectively, the other end of contact conductor 6 is signal output parts, and the two ends of described resistance 5 are connected with the signal output part of two contact conductors 6 respectively;
It is described that to have highly sensitive photoelectric detector be photogenic voltage type photodetector;
Described barium titanate doping thin layer is Ba
1-xR
xTiO
3Or BaM
yTi
1-yO
3, wherein R comprises: La, Y or Sm; Wherein M comprises: Nb, Sb, Ta, In, Mn, Mg or Fe; Its x, y value are 0.01～0.5.
In above-mentioned technical scheme, also comprise a metal shell, its chip is installed in the metal shell.
In above-mentioned technical scheme, also be included in epitaxial growth one SrO and BaO cushion on the silicon substrate, described SrO and BaO buffer layer thickness are 0.4nm～50nm.
In above-mentioned technical scheme, also be included in epitaxial growth one insulation course 7 on the silicon substrate 1,2 epitaxial growth of light responsive material layer are on insulation course 7, and the thickness of described insulation course 7 is 10nm～800nm; Perhaps again on epitaxial growth one SrO or BaO cushion 8 on the insulation course 7,2 epitaxial growth of light responsive material layer are on SrO or BaO cushion 8 then.
In above-mentioned technical scheme, described insulation course 7 comprises: lanthanum aluminate (LaAlO
3), strontium titanates (SrTiO
3), barium titanate (BaTiO
3), zirconia (ZrO
2), lanthanum manganate (LaMnO
3) or magnesium oxide (MgO).
In above-mentioned technical scheme, described barium titanate doping thin layer is Ba
1-xR
xTiO
3Or BaM
yTi
1-yO
3, the thickness of doped titanic acid titanate thin film 2 is 0.8nm～5 μ m; Wherein R comprises: La, Y or Sm; Wherein M comprises: Nb, Sb, Ta, In, Mn, Mg or Fe; Its x, y value are 0.01～0.5.
In above-mentioned technical scheme, described electrode 3 can be a point, can be a line, also can be a circle around the barium titanate doping film edge.Second electrode 4 can be connected any position of silicon substrate, can be point or line or face.First electrode 3 and second electrode 4 can directly weld with indium or scolding tin, also can be with method evaporation gold, silver or aluminium electrodes such as vacuum coating or magnetron sputterings.
In above-mentioned technical scheme, described resistance 5 mainly is in order to improve response speed, because the structure of heterojunction has capacitance characteristic, so the voltage that produces after 5 pairs of laser radiations of resistance plays discharge process, and its resistance is 0.01 Ω～1M Ω.
No matter being the laser detector of silicon-barium titanate doping double-layer structure, or the laser detector of silicon-insulation course-barium titanate doping three-decker, is consistent for the effect of exploring laser light.When pulsed laser irradiation during to doped titanic acid titanate thin film surperficial, after doped titanic acid titanate thin film or silicon substrate absorb laser, it is right to produce light induced electron and hole, at silicon and barium titanate doping at the interface under the effect of potential barrier, produce the photovoltage signal between silicon 1 and barium titanate doping 2, this effect is referred to as photovoltaic effect.Because no matter be double-layer structure or three-decker, between silicon and barium titanate doping, all there is a junction capacity, therefore resistance 5 in parallel between silicon 1 and barium titanate doping 2 plays discharge process, reduces discharge time and eliminates the influence of junction capacity to response speed.If do not consider the width of pulse voltage signal that pulse laser produces, also can not connect resistance 5.
The wide spectrum laser detector of fast-response that utilizes the barium titanate heterojunction material to make provided by the invention, its advantage is, can use film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, magnetron sputtering, electron beam evaporation and viscose process, barium titanate doping and insulation course and the direct epitaxial growth of barium titanate doping on silicon substrate; Or by SrO and BaO cushion, on silicon substrate, the preparation method is simple barium titanate doping and insulation course and barium titanate doping epitaxial growth.This laser detector is photogenic voltage type photodetector, directly produces voltage signal after the rayed, without any need for adding auxiliary power supply and electronic circuit.Can the exploring laser light energy, multiple laser parameter such as laser power, laser pulse shape.Its response wave band is a kind of fast-response broadband laser detector from the ultraviolet to the far infrared.Detection process is a ultrafast process, and the forward position of pulse voltage signal that photogenic voltage produces has only a nanosecond, the laser waveform of detectable ns pulsewidth.0.5mJ/mm
2Laser pulse can produce the voltage signal of nearly hundred mV, have very high sensitivity.Therefore silicon provided by the invention and barium titanate doping laser detector all are widely used at aspects such as military affairs, national defence, scientific research, production and lives.
Description of drawings
Fig. 1. the laser detector of silicon-barium titanate doping double-layer structure
Fig. 2. the laser detector of silicon-insulation course-barium titanate doping three-decker
Fig. 3. the laser detector of silicon-cushion-insulation course-barium titanate doping three-decker?
Fig. 4. with the BaNb of 500,000,000 oscillograph store recordings
0.3Ti
0.7O
3/ Si (p type) double-layer structure laser detector, the pulse voltage signal that measurement YAG laser output wavelength 1.06 μ m, pulsewidth 25ps laser pulse are produced.
Fig. 5. with the BaNb of 500,000,000 oscillograph store recordings
0.3Ti
0.7O
3/ SrTiO
3/ Si three-decker laser detector, the pulse voltage signal that measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps laser pulse are produced.
Drawing is described as follows:
The 1-silicon substrate; 2-light responsive material layer; 3-first electrode; 4-second electrode;
5-resistance; The 6-contact conductor; The 7-insulation course; The 8-cushion.
Embodiment
With reference to figure 1, the laser detector of preparation silicon-barium titanate doping double-layer structure below by concrete preparation process, is described in detail panel detector structure of the present invention: select laser molecular beam epitaxial device for use, substrate is a p type silicon substrate 1, direct thereon thick, the n type BaNb of epitaxial growth 180nm
0.3Ti
0.7O
3Light responsive material layer 2 forms BaNb
0.3Ti
0.7O
3The two-layer heterojunction sample of/Si cuts into and is of a size of 0.5 * 0.5cm
2The detector core; Weld second electrode 4 that is about φ 2mm with indium at silicon face, use indium at BaNb
0.3Ti
0.7O
3The surface-welding at an angle of film is about first electrode 3 of φ 1mm; Make contact conductor 6 with the copper cash of two φ 0.1mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the resistance of 5 Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; Like this detector core just preparation finish, the detector core is packed in the aluminium probe body, draw output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, with above-mentioned BaNb
0.3Ti
0.7O
3/ Si double-layer structure laser detector, the laser pulse of measurement YAG laser output wavelength 1.06 μ m, pulsewidth 25ps, Fig. 4 surveys a laser pulse, the pulse voltage signal waveform that is produced with the oscillograph store recording.The rising edge ascending time of expression voltage signal only is～1ns that half width only is～2ns 0.5mJ/mm among the figure
2Laser pulse can produce the voltage signal of nearly hundred mV.Therefore, this detector is not only a ultrafast process, and has very high sensitivity.
Select laser molecular beam epitaxial device for use, direct thick, the n type BaNb of epitaxial growth 200nm on 2 inches n type silicon substrate substrates 1
0.3Ti
0.7O
3Film light responsive materials layer 2 is prepared BaNb
0.3Ti
0.7O
3The two-layer heterojunction sample of/Si is as chip, with the laser detector of 2 inches chip assemblings with embodiment 1 preparation double-layer structure.
With reference to figure 1, select the laser molecular beam epitaxy device for use, epitaxial growth one layer thickness is the SrO cushion 8 of 20nm on p type silicon substrate 1, again SrO cushion 8 epitaxial growth one deck 800nm thick, p type BaMg
0.01Ti
0.99O
3Film light responsive materials layer 2 forms BaMg
0.01Ti
0.99O
3The two-layer heterojunction chip of/Si is at BaMg
0.01Ti
0.99O
3Edge wide platinum first electrode 3 of vacuum evaporation 0.5mm on the thin layer, all the other are with the wide spectrum laser detector of fast-response of embodiment 1 preparation.
Perhaps with reference to figure 3, on the thick SrO cushion 8 of 20nm, the thick SrTiO of epitaxial growth one deck 800nm again
3Insulation course 7 is then at SrTiO
3On the insulation course 7, epitaxial growth one deck 800nm thick, p type BaMg
0.01Ti
0.99O
3Film light responsive materials layer 2, all the other structures are with embodiment 1.
Select the laser molecular beam epitaxy device for use, epitaxial growth one deck BaO is as cushion 8 on n type silicon substrate 1; The thick p type BaMn of epitaxial growth one deck 1 μ m on cushion 8 again
0.5Ti
0.5O
3Light responsive material layer 2 forms BaMn
0.05Ti
0.95O
3The two-layer heterojunction structure chip of/Si is at BaMn
0.05Ti
0.95O
3Four edge magnetic control sputtering devices of thin layer, silver first electrode 3 that sputter 0.5mm is wide, center on silicon substrate 1 silver second electrode 4 of magnetron sputtering diameter phi 5mm, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Select laser molecular beam epitaxial device for use, direct thick, the n type BaSb of epitaxial growth 5 μ m on p type silicon substrate 1
0.02Ti
0.98O
3Film light responsive materials layer 2 is prepared BaSb
0.02Ti
0.98O
3The two-layer heterojunction structure chip sample of/Si, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Select laser molecular beam epitaxial device for use, direct thick, the n type Ba of epitaxial growth 800nm on p type silicon
0.98La
0.02TiO
3Film light responsive materials layer 2 is prepared Ba
0.98La
0.02TiO
3The two-layer heterojunction structure chip of/Si, the resistance of the 1K Ω that buys with market is made resistance 5, and all the other are with the wide spectrum laser detector of fast-response that utilizes the barium titanate heterojunction material to make of embodiment 1 preparation.
Embodiment 7
Select laser molecular beam epitaxial device for use, direct thick, the n type Ba of epitaxial growth 200nm on n type silicon substrate 1
0.5Y
0.5TiO
3Film light responsive materials layer 2, Ba
0.5Y
0.5TiO
3The two-layer heterojunction structure chip of/Si, resistance 5 is the resistance of 50 Ω, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Embodiment 8
Select laser molecular beam epitaxial device for use, direct thick, the n type Ba of epitaxial growth 1.5 μ m on p type silicon substrate 1
0.8Sm
0.2TiO
3Film light responsive materials layer 2 is prepared Ba
0.8Sm
0.2TiO
3The two-layer heterojunction structure chip sample of/Si, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Embodiment 9
Select laser molecular beam epitaxial device for use, direct thick, the n type BaTa of epitaxial growth 1 μ m on p type silicon substrate 1
0.2Ti
0.8O
3Film light responsive materials layer 2 is prepared BaTa
0.2Ti
0.8O
3The two-layer heterojunction structure chip sample of/Si, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Select laser molecular beam epitaxial device for use, direct thick, the p type BaFe of epitaxial growth 100nm on n type silicon substrate 1
0.1Ti
0.9O
3Film light responsive materials layer 2 is prepared BaFe
0.01Ti
0.9O
3The two-layer heterojunction structure chip sample of/Si, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Embodiment 11
Select laser molecular beam epitaxial device for use, direct thick, the p type BaIn of epitaxial growth 50nm on n type silicon substrate 1
0.05Ti
0.95O
3Film light responsive materials layer 2 is prepared BaIn
0.05Ti
0.95O
3The two-layer heterojunction structure chip sample of/Si, all the other are the same with the wide spectrum laser detector of the fast-response structure of embodiment 1 preparation.
Embodiment 12
The laser detector of preparation silicon-insulation course-barium titanate doping double-layer structure in conjunction with concrete preparation process, is described in detail the structure of present embodiment: select laser molecular beam epitaxial device for use, the thick SrTiO of first extension 10nm on p type silicon substrate 1
3Make insulation course 7, then at SrTiO
3The thick BaMg of last epitaxial growth 500nm
0.01Ti
0.99O
3Film light responsive materials layer 2 forms BaNb
0.3Ti
0.7O
3/ SrTiO
3Three layers of heterojunction structure chip of/Si are cut to and are of a size of 1 * 1cm
2The detector core; Remove the monox on silicon substrate 1 surface with hydrofluorite, be about second electrode 4 of φ 2mm with indium in silicon substrate 1 surface-welding, the usefulness indium is at BaNb
0.3Ti
0.7O
3A welded corner joint on thin layer 2 surfaces is about first electrode 3 of φ 1mm; Make contact conductor 6 with the copper cash of two φ 0.1mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the lead of 0.01 Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; The detector core just prepares completely like this, and the detector core is packed in the copper probe body, draws output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, with above-mentioned BaNb
0.3Ti
0.7O
3/ SrTiO
3/ Si three-decker laser detector, the laser pulse of measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps.Fig. 5 is with laser pulse of oscillograph store recording detector, the waveform voltage signal that is produced.As can be seen from Figure 5, the rising edge ascending time of voltage signal that pulse laser produces only is～1.3ns that half width only is～1.8ns 0.5mJ/cm
2Laser energy can produce the voltage signal of 50mV.Therefore, the detector of three-decker is the same with the detector of double-layer structure, is not only a ultrafast process, and has very high sensitivity.
Embodiment 13
Press embodiment 12 and make, its insulation course 7 is LaAlO
3, its thickness is 10nm, all the other structures are the same with the wide spectrum laser detector of the fast-response structure that embodiment 12 makes.
Embodiment 14
Press embodiment 12 and make, use BaTiO
3Make insulation course 7, its thickness is 800nm, and all the other structures are the same with the wide spectrum laser detector of the fast-response structure of utilizing the barium titanate heterojunction material to make of embodiment 12.
Embodiment 15
Press embodiment 12 and make, use ZrO
3Make insulation course 7, its thickness is 300nm, and all the other structures are the same with the wide spectrum laser detector of the fast-response structure of utilizing the barium titanate heterojunction material to make of embodiment 12.
Embodiment 16
Press embodiment 12 and make, make insulation course 7 with MgO, its thickness is 100nm, and all the other structures are the same with the wide spectrum laser detector of the fast-response structure of utilizing the barium titanate heterojunction material to make of embodiment 12.
Embodiment 17
Use magnetron sputtering apparatus to prepare the wide spectrum laser detector of a fast-response, wherein on p type silicon substrate 1 growth one layer thickness be the SrO of 5nm as cushion 8, all the other structures are with embodiment 1.
Embodiment 18
Use electron beam evaporation equipment to prepare the wide spectrum laser detector of fast-response of an embodiment 1, comprise also that just one has the resistance 5 of 1M resistance, the two ends of this resistance 5 are connected with the signal output part of two contact conductors (6) respectively; All the other structures are with embodiment 1.
Claims (5)
1. one kind has highly sensitive photoelectric detector, comprising: p type or n type silicon chip are substrate (1); Go up the barium titanate doping thin layer of growth one deck n type or p type at the substrate (1) of described p type or n type silicon chip and make chip; It is characterized in that: also comprise a resistance (5), first electrode (3), second electrode (4), two contact conductors (6) and growth one layer insulating (7) between substrate (1) and described barium titanate doping thin layer; Wherein, the thickness of described insulation course (7) is 10nm～800nm; Described barium titanate doping thin layer is light responsive material layer (2), and the thickness of described light responsive material layer (2) is 0.8nm～2 μ m; First electrode (3) is arranged on the light responsive material layer (2), second electrode (4) is arranged on substrate (1) face, one end of two contact conductors (6) is connected with second electrode (4) with first electrode (3) respectively, the other end of contact conductor (6) is a signal output part, and the two ends of described resistance (5) are connected with the signal output part of two contact conductors (6) respectively;
It is described that to have highly sensitive photoelectric detector be photogenic voltage type photodetector;
Described barium titanate doping thin layer is Ba
1-xR
xTiO
3Or BaM
yTi
1-yO
3, wherein R comprises: La, Y or Sm; Wherein M comprises: Nb, Sb, Ta, In, Mn, Mg or Fe; Its x, y value are 0.01～0.5;
The resistance of described resistance (5) is 0.01 Ω～1M Ω.
2. have a highly sensitive photoelectric detector by claim 1 is described, it is characterized in that: also comprise; Go up epitaxial growth one SrO or BaO cushion (8) at substrate (1), the described insulation course of epitaxial growth (7) on described SrO or BaO cushion is gone up the described light responsive material layer of epitaxial growth (2) at this insulation course (7) then.
3. have a highly sensitive photoelectric detector by claim 2 is described, it is characterized in that: described insulation course (7) is selected from: lanthanum aluminate, strontium titanates, barium titanate, zirconia, lanthanum manganate or magnesium oxide; Wherein the thickness of insulation course (7) is 10nm～500nm.
4. have a highly sensitive photoelectric detector by claim 1 is described, it is characterized in that: described first electrode (3) comprising: directly weld with indium or scolding tin; Or gold, silver or aluminium electrode are made a point, a line, or around a circle of barium titanate doping thin film layer edge with vacuum coating or magnetically controlled sputter method.
5. have a highly sensitive photoelectric detector by claim 1 is described, it is characterized in that: described second electrode (4) is arranged on any position of substrate (1), and second electrode (4) is an indium or scolding tin point directly welding formation, line or face; First electrode (3) and second electrode (4) or with vacuum coating or magnetically controlled sputter method evaporation gold, silver or aluminium electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510071810A CN100593110C (en) | 2005-05-24 | 2005-05-24 | Photoelectric detector with high sensitivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200510071810A CN100593110C (en) | 2005-05-24 | 2005-05-24 | Photoelectric detector with high sensitivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1869611A CN1869611A (en) | 2006-11-29 |
| CN100593110C true CN100593110C (en) | 2010-03-03 |
Family
ID=37443333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200510071810A Expired - Fee Related CN100593110C (en) | 2005-05-24 | 2005-05-24 | Photoelectric detector with high sensitivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100593110C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114975645B (en) * | 2022-05-14 | 2024-03-19 | 南京大学 | Rare earth doped III-V semiconductor structure and photoelectric detector structure thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621238A (en) * | 1994-02-25 | 1997-04-15 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow band semiconductor detector |
| US6059895A (en) * | 1997-04-30 | 2000-05-09 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
| CN1371136A (en) * | 2001-02-21 | 2002-09-25 | 中国科学院物理研究所 | Semiconductor and barium titanate p-n junction |
| CN1485935A (en) * | 2002-09-27 | 2004-03-31 | 中国科学院物理研究所 | Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process |
| CN1535472A (en) * | 2001-07-20 | 2004-10-06 | Ħ��������˾ | Epitaxial semiconductor on insulator (SOI) structures and devices |
-
2005
- 2005-05-24 CN CN200510071810A patent/CN100593110C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5621238A (en) * | 1994-02-25 | 1997-04-15 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow band semiconductor detector |
| US6059895A (en) * | 1997-04-30 | 2000-05-09 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
| CN1371136A (en) * | 2001-02-21 | 2002-09-25 | 中国科学院物理研究所 | Semiconductor and barium titanate p-n junction |
| CN1535472A (en) * | 2001-07-20 | 2004-10-06 | Ħ��������˾ | Epitaxial semiconductor on insulator (SOI) structures and devices |
| CN1485935A (en) * | 2002-09-27 | 2004-03-31 | 中国科学院物理研究所 | Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1869611A (en) | 2006-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7955871B2 (en) | Method of using a switchable resistive perovskite microelectronic device with multi-layer thin film structure | |
| CN101826594B (en) | Misfit-layered cobalt oxide pyroelectric thin-film photodetector | |
| US6204139B1 (en) | Method for switching the properties of perovskite materials used in thin film resistors | |
| CN101285705B (en) | Infrared detector | |
| Sun et al. | Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO 3/Ti memory cells | |
| CN100539210C (en) | A kind of photo-detector and preparation method thereof with all-wave length | |
| CN101826570B (en) | P-n heterojunction optical detector | |
| CN100573060C (en) | A kind of quick response broadband optical detector | |
| CN100593110C (en) | Photoelectric detector with high sensitivity | |
| CN100422702C (en) | Fast response broad frequency range laser detector made of hetero-junctions material | |
| CN100458382C (en) | Quick-responding high-sensitivity ultraviolet detector made by calcium-titanium oxide monocrystal material | |
| CN102231403B (en) | Ultraviolet detector | |
| CN100412518C (en) | Preparing laser detector in quick responding and broadband by using material of oxide film in multi layers | |
| CN100458381C (en) | Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material | |
| CN101261158B (en) | Photodetector | |
| CN100437055C (en) | Fast response broad band laser detector made by oxide heterojunction material | |
| JP6813844B2 (en) | Tunnel junction element and non-volatile memory element | |
| CN101275867A (en) | Photodetector | |
| US5032713A (en) | Photosensing device and photosensing apparatus using a probe electrode | |
| CN100423295C (en) | Laser detecting device with super fast response wide band | |
| CN100438114C (en) | Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process | |
| CN106997907B (en) | A kind of visible blind UV detector of high sensitivity | |
| CN101493356A (en) | Medium-infrared-to-far-infrared detector | |
| CN100536173C (en) | A detector from deep ultraviolet to remote infrared and its making method | |
| CN105098065A (en) | Preparation method for memory cell of resistive random access memory and product thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100303 Termination date: 20120524 |