CN100412518C - Preparing laser detector in quick responding and broadband by using material of oxide film in multi layers - Google Patents
Preparing laser detector in quick responding and broadband by using material of oxide film in multi layers Download PDFInfo
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- CN100412518C CN100412518C CNB2004100711743A CN200410071174A CN100412518C CN 100412518 C CN100412518 C CN 100412518C CN B2004100711743 A CNB2004100711743 A CN B2004100711743A CN 200410071174 A CN200410071174 A CN 200410071174A CN 100412518 C CN100412518 C CN 100412518C
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Abstract
The present invention relates to a quick response wide frequency band laser detector made of multi-layer oxide film materials, which comprises a chip composed of doped oxide epitaxially growing on one surface of a substrate of an oxide single crystal base sheet and a photoresponse material layer, wherein the doped oxide is doped strontium titanate or doped barium titanate epitaxially growing on the oxide single crystal substrate, and the photoresponse layer is a lanthanum manganate doped thin film layer. A first electrode is arranged on the lanthanum manganate doped thin film, a second electrode is arranged on the doped oxide, one end of two electrode leading wires is respectively connected with the first electrode and the second electrode, and the other end of the electrode leading wires is a signal output end. The detector is a photovoltaic photoelectric detector, when the detector is irradiated, voltage signals are directly generated and any auxiliary power supplies and electronic circuits are not needed. A response waveband is from an ultraviolet waveband to a far infrared waveband, and the present invention can respond to laser pulses of femtosecond pulse width. The front edge of each voltage pulse generated by the laser pulses is less than 1.5 ns, half width is less than 2 ns, and the full width of the pulses is only a few ns.
Description
Technical field
The present invention relates to a kind of laser detector, particularly a kind of fast response broad band laser detector that utilizes oxide multilayered membrane material to make.
Background technology
For the detection of laser energy, power, pulsewidth and waveform, be very important not only, and application is very widely also arranged in military affairs, national defence, production and life Laser Devices and scientific research.Although people have been developed the laser detector as number of different types such as thermoelectricity, photoelectricity, pyroelectricities, but be still people's work interested and that always carrying out for the new pattern laser detector operation, the applicant also obtains the patent of following several laser detectors, for example patent No.: ZL89202869.6 in this respect; The patent No.: ZL89220541.5; The patent No.: ZL90202337.3, the patent No.: ZL90205920.3; But the detector of above-mentioned several patents all adopts piezoelectric to make, and this detector photoresponse is fast not enough, and response wave band is also wide not enough.
Magnetoresistance characteristics people for the iron-based alloy material have studied much, and people also observe the photoelectric characteristic of iron-based alloy film (as document 1, Time dependence of laser-inducedthermoelectric voltages in La recently
1-xCa
xMnO
3And YBa
2Cu
3O
7-δThin films, P.X.Zhanget al., Appl.Phys.Lett., Vol.84, No.21,4026 (2002)), but the pulsewidth of its photoresponse is the ms magnitude, therefore can't be used to survey and the pulse laser waveform of Laser Measurement pulse width less than ms.
Summary of the invention
The objective of the invention is to overcome the slow and narrow defective of response wave band of above-mentioned detector speed of photoresponse; Provide a kind of voltage signal that after rayed, directly produces, without any need for auxiliary power supply and electronic circuit; And energy, power and waveform that can exploring laser light, its response wave band is from the ultraviolet to the far infrared, can respond the laser pulse of femtosecond pulsewidth, the half width that produces potential pulse can be less than 2ns, and the pulse full duration can reach the fast response broad band laser detector that the oxide multilayered membrane material of utilizing of several ns is made.
The object of the present invention is achieved like this:
The laser detector that utilizes oxide multilayered membrane material to make provided by the invention, comprising: the monoxide monocrystal chip is substrate 1, light responsive material layer 2, first electrode 3, second electrode 4 and contact conductor 6; It is characterized in that: also comprise an epitaxially grown doped oxide film 7, this doped oxide film 7 is arranged between substrate 1 and the light responsive material layer 2, this doped oxide film is strontium titanate doping or doped titanic acid titanate thin film 7, light responsive material layer 2 is the iron-based alloy thin layer, forms the chip of doping oxide-iron-based alloy double-layer structure; First electrode 3 is arranged on the iron-based alloy film 2, and second electrode 4 is arranged on the doped oxide film 7; Described contact conductor 6 is 2, and wherein an end of a contact conductor 6 is connected with first electrode 3, and an end of another root contact conductor 6 is connected with second electrode 4, and the other end of these two contact conductors 6 is a signal output part.Also comprise a metal shell, said chip be installed in the metal shell that metal shell electromagnetic interference (EMI) to external world plays shielding action.
Also comprise a resistance 5, the two ends of this resistance 5 are connected with the output terminal of two contact conductors 6 respectively.Described resistance 5 mainly is in order to improve response speed, because the structure of heterojunction has capacitance characteristic, so the voltage that produces after 5 pairs of laser radiations of resistance plays discharge process, and its resistance is 0.01～1M Ω.
Also be included in epitaxial growth one insulation course 8 on the doped oxide film layer 7,2 epitaxial growths of iron-based alloy film form doping oxide-insulation course-iron-based alloy oxide heterojunction on insulation course 8.
Also be included in one side epitaxial growth one deck strontium titanate doping of substrate 1 or barium titanate doping or iron-based alloy as doped oxide film 7, at the oxide monocrystal substrate is the another side epitaxial growth iron-based alloy film at the end 1, forms doping oxide-oxide substrate-iron-based alloy oxide heterojunction.
Described oxide monocrystal base substrate 1 comprises: lanthanum aluminate (LaAlO
3), strontium titanates (SrTiO
3), barium titanate (BaTiO
3), zirconia (ZrO
2), lanthanum aluminate (LaAlO
3) or magnesium oxide (MgO).
Described insulation course 7 comprises: lanthanum aluminate (LaAlO
3), strontium titanates (SrTiO
3), barium titanate (BaTiO
3), zirconia (ZrO
2), lanthanum manganate (LaMnO
3) or magnesium oxide (MgO), the thickness of insulation course is 1nm～500nm.
The BaTiO of described doping
3Comprise: n type barium titanate BaA
xTi
1-xO
3Or Ba
1-xLa
xTiO
3Membraneous material, wherein A is Nb or Ta; P type barium titanate BaB
xTi
1-xO
3, wherein B is In, Ga or Mn; The span of all x is 0.005～0.5.
The SrTiO of described doping
3Comprise: n type strontium titanates SrA
xTi
1-xO
3Or Sr
1-xLa
xTiO
3Membraneous material, wherein A is Nb or Ta; P type strontium titanates SrB
xTi
1-xO
3, wherein B is In, Ga or Mn; The span of all x is 0.005～0.5.
Described iron-based alloy thin layer is R
1-xA
xMnO
3, the thickness of iron-based alloy film 2 is 0.8nm～2 μ m; Wherein R is La; Wherein A comprises: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; Its x value is 0.05～0.4.
Described electrode 3 can be a point, or a line, also can be a circle around iron-based alloy film 2 edges.Second electrode 4 is connected on the doped oxide film, can adopt chemical corrosion or ion beam etching method or expose a limit with methods such as plate washer manifest doping oxide at the edge of sample a some during film in system, or reserve a circle of outer, be used for connection electrode 4.First electrode 3 and second electrode 4 can directly weld with indium or scolding tin, also can be with method evaporation gold, silver or aluminium electrodes such as vacuum coating or magnetron sputterings.
No matter be the laser detector of doping oxide-iron-based alloy double-layer structure, or the laser detector of doping oxide-insulation course-iron-based alloy three-decker, or the laser detector of doping oxide-oxide substrate-iron-based alloy structure, be consistent for the effect of exploring laser light.When pulsed laser irradiation during to iron-based alloy film surperficial, behind the iron-based alloy film absorption laser pulse, will between doping oxide 7 and iron-based alloy 2, produce voltage signal, this effect is referred to as photovoltaic effect.No matter be double-layer structure or three-decker, between doping oxide and iron-based alloy, all there is a junction capacity, therefore resistance 5 in parallel between doping oxide 7 and iron-based alloy 2 plays discharge process, reduces discharge time and eliminates the influence of junction capacity to response speed.If do not consider the width of pulse voltage signal that pulse laser produces, also can not connect resistance 5.
The fast response broad band laser detector that utilizes oxide multilayered membrane material to make provided by the invention, its advantage is, can use film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, magnetron sputtering and viscose process, directly doping oxide, insulation course and the epitaxial growth of photoresponsive layer iron-based alloy on the oxide monocrystal base substrate, or the chip that directly doping oxide, iron-based alloy insulation course and a light responsive material layer 2 is made, making two electrodes just becomes a photogenic voltage type photodetector; This preparation method is simple.This photodetector directly produces voltage signal after rayed, without any need for auxiliary power supply and electronic circuit.Can the exploring laser light energy, multiple laser parameter such as laser power, laser pulse shape.The response wave band of this photodetector is a kind of fast response broad band laser detector from the ultraviolet to the far infrared.Detection process is a ultrafast process, and the forward position of pulse voltage signal that photogenic voltage produces reaches the ns magnitude, the laser energy of not only detectable femtosecond pulsewidth, and the laser waveform of detectable ns pulsewidth.The laser pulse of a mJ can produce the voltage signal of mV up to a hundred, has very high sensitivity.Therefore the laser detector that utilizes oxide multilayered membrane material to make provided by the invention all is widely used at aspects such as military affairs, national defence, scientific research, production and lives.
Description of drawings
Fig. 1. the laser detector of doping oxide-iron-based alloy double-layer structure.
Fig. 2. the laser detector of doping oxide-insulation course-iron-based alloy three-decker.
Fig. 3. the laser detector of doping oxide-oxide substrate-iron-based alloy three-decker.
Fig. 4. with the La of 500,000,000 oscillograph store recordings
0.7Sr
0.3MnO
3/ SrNb
0.01Ti
0.99O
3The double-layer structure laser detector, the voltage signal that measurement YAG laser output wavelength 1.06 μ m, pulsewidth 25ps laser pulse are produced.
Fig. 5. with the La of 500,000,000 oscillograph store recordings
0.7Sr
0.3MnO
3/ SrTiO
3/ SrNb
0.01Ti
0.99O
3The three-decker laser detector, the voltage signal that measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps laser pulse are produced.
Drawing is described as follows:
1-oxide monocrystal base substrate; 2-light responsive material layer; 3-first electrode;
4-second electrode; 5-resistance; The 6-contact conductor;
The 7-doping oxide; The 8-insulation course.
Embodiment
With reference to figure 1, the laser detector of preparation doping oxide-iron-based alloy double-layer structure below in conjunction with concrete preparation process, comes the fast response broad band laser detector structure that the present invention utilizes oxide multilayered membrane material to make is described in detail.Select laser molecular beam epitaxial device for use, substrate 1 is 3 * 3cm
2The SrTiO of size
3Monocrystal chip adopts SrNb
0.1Ti
0.9O
3The target of niobium-doped strontium titanate is with its SrNb
0.1Ti
0.9O
3The niobium-doped strontium titanate epitaxial growth on substrate 1 as doped oxide film 7, again at doping oxide SrNb
0.1Ti
0.9O
3The thick La of epitaxial growth 300nm on the thin layer 7
0.7Sr
0.3MnO
3Light responsive material layer 2 is like this at SrTiO
3Form La on the oxide substrate 1
0.7Sr
0.3MnO
3/ SrNb
0.1Ti
0.9O
3/ SrTiO
3The laser detector of doping oxide-iron-based alloy double-layer structure.The sample cutting 1 * 1cm that makes
2The size slice, thin piece is as detector chip, with the ion beam etching technology at an angle of detector core La
0.7Sr
0.3MnO
3Etch the circle of a φ 2mm, etching manifests the niobium-doped strontium titanate face, welds second electrode 4 that is about φ 1mm size with indium at the edge of niobium-doped strontium titanate film 7, uses indium at La
0.7Sr
0.3MnO
3An angle surface welding of film is about first electrode 3 of φ 1mm; Make contact conductor 6 with the copper cash of two φ 0.1mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the resistance of 2 Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; Like this detector core just preparation finish, the detector core is packed in the probe body of an aluminium, draw output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, two-layer oxide film material laser detector with the foregoing description 1 preparation, measure the laser pulse of YAG laser output wavelength 1.06 μ m, pulsewidth 25ps, Fig. 4 is with laser pulse of oscillograph store recording detector, the waveform voltage signal that is produced.
The rising edge ascending time of voltage signal only is～1.5ns, and half width only is～3ns, the voltage signal that the laser energy of 1mJ can mV up to a hundred.Therefore, this detector is not only a ultrafast process, and has very high sensitivity.
Press the structure fabrication of embodiment 1, just use SrNb instead
0.005Ti
0.995O
3Replace SrNb
0.1Ti
0.9O
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use SrNb
0.5Ti
0.95O
3Replace SrNb
0.1Ti
0.9O
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use BaNb
0.1Ti
0.9O
3Replace SrNb
0.1Ti
0.9O
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use BaIn
0.1Ti
0.9O
3Replace SrNb
0.1Ti
0.9O
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use La
0.05Sr
0.95MnO
3Replace La
0.7Sr
0.3MnO
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use La
0.05Sr
0.95MnO
3Replace La
0.7Sr
0.3MnO
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Embodiment 9
Press the structure fabrication of embodiment 1, just use La
0.7Ba
0.3MnO
3Replace La
0.7Sr
0.3MnO
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Press the structure fabrication of embodiment 1, just use La
0.7Ga
0.3MnO
3Replace La
0.7Sr
0.3MnO
3Make doped oxide film 7, the laser detector of preparation doping oxide-iron-based alloy double-layer structure.
Embodiment 11
Press the structure fabrication of embodiment 1, with chemical corrosion method on a limit of detector core La
0.7Sr
0.3MnO
3Erode away a wide line of 2mm, etching manifests the niobium-doped strontium titanate face, and wide in the welding of the edge of niobium-doped strontium titanate 7 with indium is second electrode 4 of 1mm, prepares the laser detector of doping oxide-iron-based alloy double-layer structure.
At the structure fabrication of embodiment 1, use LaAlO
3The oxide monocrystal substrate replaces SrTiO
3The oxide monocrystal substrate prepares the laser detector of doping oxide-iron-based alloy double-layer structure as substrate 1.
Embodiment 13
Press the structure fabrication of embodiment 1, replace SrTiO with the MgO monocrystal chip
3The oxide monocrystal substrate prepares the laser detector of doping oxide-iron-based alloy double-layer structure as substrate 1.
Press the structure fabrication of embodiment 1, use ZrO
2Monocrystal chip replaces SrTiO
3The oxide monocrystal substrate prepares the laser detector of doping oxide-iron-based alloy double-layer structure as substrate 1.
Press the structure fabrication of embodiment 11, with chemical corrosion method on a limit of detector core La
0.7Sr
0.3MnO
3Erode away a wide line of 2mm, corrosion manifests the niobium-doped strontium titanate face, uses magnetic control sputtering device, at the wide La of 2mm
0.7Sr
0.3MnO
3The wide silver of sputter 0.5mm is prepared the laser detector of doping oxide-iron-based alloy double-layer structure as first electrode 3 on the face.
Embodiment 17
With reference to figure 2, the laser detector of preparation doping oxide-insulation course-iron-based alloy three-decker is described in detail below in conjunction with the structure of concrete preparation process to present embodiment.Select laser molecular beam epitaxial device for use, at the SrTiO of 2cm * 2cm size
3On the substrate 1, the SrNb that first extension 500nm is thick
0.1Ti
0.9O
3Film is made doping oxide 7, at SrNb
0.1Ti
0.9O
3The thick SrTiO of epitaxial growth 200nm on the doping oxide 7
3Make insulation course 8, again at insulation course SrTiO
3The thick La of epitaxial growth 300nm on the film 8
0.7Sr
0.3NO
3Film forms La as light responsive material layer 2 on strontium titanates substrate 1
0.7Sr
0.3MnO
3/ SrTiO
3/ SrNb
0.1Ti
0.9O
3The laser detector sample of three-decker is cut to and is of a size of 1 * 0.5cm
2Detector chip; With the ion beam etching technology at an angle of detector chip light responsive material layer 2La
0.7Sr
0.3MnO
3With insulation course 8SrTiO
3Double-layer films etches the circle of φ 2mm, and etching manifests SrNb
0.1Ti
0.9O
3The niobium-doped strontium titanate face welds second electrode 4 that is about φ 1mm indium with indium on the φ of niobium-doped strontium titanate film 7 2mm disc, use indium at La
0.7Sr
0.3MnO
32 one angle surface place welding of thin layer are about first electrode 3 of φ 1mm circle; Make contact conductor 6 with the copper cash of two φ 0.2mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the lead of 0.01 Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; The detector core just prepares completely like this, and the detector core is packed in the copper probe body, draws output terminal with coaxial fitting.
Select 500,000,000 oscillographs for use, with present embodiment epitaxially grown La on the strontium titanates substrate
0.7Sr
0.3MnO
3/ SrTiO
3/ SrNb
0.1Ti
0.9O
3The three-decker laser detector, the laser pulse of measurement YAG frequency tripling laser output wavelength 355nm, pulsewidth 15ps.Fig. 4 is with laser pulse of oscillograph store recording detector, the waveform voltage signal that is produced.As can be seen from Figure 4, the rising edge ascending time of voltage signal that pulse laser produces only is～1.5ns, and half width only is～3ns, the voltage signal that the laser energy of 1mJ can mV up to a hundred.Therefore, the detector of three-decker is the same with the detector of double-layer structure, is not only a ultrafast process, and has very high sensitivity.
Press the structure fabrication of embodiment 17, the thick LaAlO of growth one deck 1nm on doped oxide film layer 7
3Film is as insulation course 8, and all the other structures promptly prepare La with embodiment 17 on strontium titanates substrate 1
0.7Sr
0.3MnO
3/ LaAlO
3/ SrNb
0.1Ti
0.9O
3The three-decker laser detector.
Embodiment 19
Press the structure fabrication of embodiment 17, use the thick ZrO film of 500nm, promptly on strontium titanates substrate 1, prepare La as insulation course 8
0.7Sr
0.3MnO
3/ ZrO/SrNb
0.1Ti
0.9O
3The three-decker laser detector.
Press the structure fabrication of embodiment 17, make insulation course 8, promptly on strontium titanates substrate 1, prepare La with the MgO film that 50nm is thick
0.7Sr
0.3MnO
3/ MgO/SrNb
0.1Ti
0.9O
3The three-decker laser detector.
Embodiment 21
Adopt the pulse laser film-forming method, press the structure fabrication of embodiment 17, be produced on epitaxially grown La on the strontium titanates substrate
0.7Sr
0.3MnO
3/ SrTiO
3/ SrNb
0.1Ti
0.9O
3The three-decker laser detector.
Embodiment 22
Adopt the magnetron sputtering film-forming method, press the structure fabrication of embodiment 17, be produced on epitaxially grown La on the strontium titanates substrate
0.7Sr
0.3MnO
3/ SrTiO
3/ SrNb
0.1Ti
0.9O
3The three-decker laser detector.
Embodiment 23
Press the structure fabrication of embodiment 17, with the thick La of 400nm
0.7Sr
0.3MnO
3Replace the thick SrNb of 500nm
0.1Ti
0.9O
3Film is made doping oxide 7, prepares La on strontium titanates substrate 1
0.7Sr
0.3MnO
3/ SrTiO
3/ La
0.7Sr
0.3MnO
3The three-decker laser detector.
Embodiment 24
Press the structure fabrication of embodiment 17, with the thick BaNb of 400nm
0.3Ti
0.7O
3Replace the thick SrNb of 500nm
0.1Ti
0.9O
3Film is made doping oxide 7, prepares La on strontium titanates substrate 1
0.7Sr
0.3MnO
3/ SrTiO
3/ BaNb
0.3Ti
0.7O
3The three-decker laser detector.
With reference to figure 3, the laser detector of preparation doping oxide-oxide substrate-iron-based alloy three-decker in conjunction with time mask body preparation process, is described in detail the structure of present embodiment.Select laser molecular beam epitaxial device for use, at the SrTiO of 2 inches sizes of twin polishing
3On the face of substrate 1, the SrNb that extension 500nm is thick
0.3Ti
0.7O
3Film is made doping oxide 7, at SrTiO
3The thick La of epitaxial growth 300nm on another face of substrate 1
0.8Ca
0.2MnO
3Film light responsive materials layer 2 forms La
0.8Ca
0.2MnO
3/ SrTiO
3/ SrNb
0.3Ti
0.7O
3The laser detector sample of doping oxide-oxide substrate-iron-based alloy three-decker is cut to and is of a size of 1 * 1cm
2Detector chip.With indium at SrNb
0.3Ti
0.7O
3Welding is about second electrode 4 of φ 2mm on the face of niobium-doped strontium titanate 7, uses indium at La
0.8Ca
0.2MnO
32 one angle surface place welding of film light response layer are about first electrode 3 of φ 1mm; Make contact conductor 6 with the copper cash of two φ 0.2mm, and one end of two φ 0.1mm copper electrode lead-in wires 6 is welded on respectively on first electrode 3 and second electrode 4 with indium; Select for use the resistance of 1K Ω to make resistance 5, and with its two ends respectively with the welding of the output terminal of two contact conductors 6; The detector core just prepares completely like this, and the detector core is packed in the copper probe body, draws output terminal with coaxial fitting.
Embodiment 26
Press the structure fabrication of embodiment 25, select LaAlO for use
3The oxide monocrystal substrate is being used LaAlO as substrate 1
3Prepare La on the substrate 1
0.8Ca
0.2MnO
3/ LaAlO
3/ SrNb
0.3Ti
0.7O
3The laser detector of doping oxide-oxide substrate-iron-based alloy three-decker.
Embodiment 27
Press the structure fabrication of embodiment 25, replace SrTiO with MgO
3 Make oxide substrate 1, on MgO substrate 1, prepare La
0.8Ca
0.2MnO
3/ MgO/SrNb
0.3Ti
0.7O
3The laser detector of doping oxide-oxide substrate-iron-based alloy three-decker.
Embodiment 28
Press the structure fabrication of embodiment 25, with the thick BaNb of 400nm
0.3Ti
0.7O
3Replace the thick SrNb of 500nm
0.3Ti
0.7O
3Film is made doping oxide 7, preparation La
0.8Ca
0.2MnO
3/ SrTiO
3/ BaNb
0.3Ti
0.7O
3The laser detector sample of doping oxide-oxide substrate-iron-based alloy three-decker.
Embodiment 29
Press the structure fabrication of embodiment 25, with the thick La of 200nm
0.8Ca
0.2MnO
3Replace 500nm thick
Film is made doping oxide 7, preparation
/ SrTiO
3/
The laser detector sample of doping oxide-oxide substrate-iron-based alloy three-decker.
Claims (12)
1. laser detector that utilizes oxide multilayered membrane material to make comprises substrate (1), the light responsive material layer (2) of monoxide monocrystal chip, first electrode (3), second electrode (4) and contact conductor (6); It is characterized in that: also comprise an epitaxially grown doped oxide film (7), this doped oxide film (7) is arranged between substrate (1) and the light responsive material layer (2); This doped oxide film is strontium titanate doping or doped titanic acid titanate thin film (7), and light responsive material layer (2) is the iron-based alloy thin layer, forms the chip of doping oxide-iron-based alloy double-layer structure; First electrode (3) is arranged on the iron-based alloy film (2), and second electrode (4) is arranged on the doped oxide film (7); Described contact conductor (6) is 2, and wherein an end of a contact conductor (6) is connected with first electrode (3), and an end of another root contact conductor (6) is connected with second electrode (4), and the other end of these two contact conductors (6) is a signal output part.
2. laser detector that utilizes oxide multilayered membrane material to make comprises substrate (1), the light responsive material layer (2) of monoxide monocrystal chip, first electrode (3), second electrode (4) and contact conductor (6); It is characterized in that: also be included in oxide monocrystal base substrate (1) and go up epitaxial growth one doped oxide film layer (7), described doped oxide film layer (7) is strontium titanate doping or doped titanic acid titanate thin film, go up epitaxial growth one insulation course (8) at described doped oxide film layer (7), on insulation course (8), form the chip of doping oxide-insulation course-iron-based alloy three-decker as the iron-based alloy thin film epitaxial growth of light responsive material layer (2); First electrode (3) is provided with on the superincumbent iron-based alloy film (2), and second electrode (4) is arranged on the following doped oxide film (7); Described contact conductor (6) is 2, and wherein an end of a contact conductor (6) is connected with first electrode (3), and an end of another root contact conductor (6) is connected with second electrode (4), and the other end of these two contact conductors (6) is a signal output part; The two ends of resistance (5) are connected with the output terminal of contact conductor (6) respectively.
3. laser detector that utilizes oxide multilayered membrane material to make comprises substrate (1), the light responsive material layer (2) of monoxide monocrystal chip, first electrode (3), second electrode (4) and contact conductor (6); It is characterized in that: also be included in epitaxial growth one doped oxide film layer (7) on the one side of oxide monocrystal base substrate (1), described doped oxide film layer (7) is strontium titanate doping or doped titanic acid titanate thin film; Epitaxial growth one forms the chip of doping oxide-oxide substrate-iron-based alloy three-decker as the iron-based alloy film of light responsive material layer (2) on the another side of this oxide monocrystal base substrate (1); First electrode (3) is provided with on the superincumbent iron-based alloy film (2), second electrode (4) is arranged on the following doped oxide film (7), described contact conductor (6) is 2, wherein an end of a contact conductor (6) is connected with first electrode (3), one end of another root contact conductor (6) is connected with second electrode (4), and the other end of these two contact conductors (6) is a signal output part; The two ends of resistance (5) are connected with the output terminal of contact conductor (6) respectively.
4. by the described laser detector that utilizes oxide multilayered membrane material to make of claim 1, it is characterized in that: also comprise a resistance (5); The two ends of resistance (5) are connected with the signal output part of two contact conductors (6) respectively.
5. by claim 1,2, the 3 or 4 described laser detectors that each utilizes oxide multilayered membrane material to make, it is characterized in that: described oxide monocrystal base substrate is strontium titanates, barium titanate, lanthanum aluminate, magnesium oxide or zirconia.
6. by claim 1,2, the 3 or 4 described laser detectors that each utilizes oxide multilayered membrane material to make, it is characterized in that: described iron-based alloy thin layer is R
1-xA
xMnO
3, wherein R is La; A is Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; Its x value is 0.05～0.4; The thickness of iron-based alloy film (2) is 0.8nm～2 μ m.
7. by the described laser detector that utilizes oxide multilayered membrane material to make of claim 2, it is characterized in that: described insulation course (7) is lanthanum aluminate, strontium titanates, barium titanate, zirconia, lanthanum manganate or magnesium oxide; The thickness of insulation course (7) is 10nm～500nm.
8. by claim 1,2, the 3 or 4 described laser detectors that each utilizes oxide multilayered membrane material to make, it is characterized in that: described doped oxide film layer is strontium titanate doping film or doped titanic acid titanate thin film, the wherein BaTiO of Can Zaing
3Be n type barium titanate BaA
xTi
1-xO
3Or Ba
1-xLa
xTiO
3Membraneous material, A are Nb or Ta;
The perhaps BaTiO of Can Zaing
3Be p type barium titanate BaB
xTi
1-xO
3, B is In, Ga or Mn, the span of x is 0.005～0.5;
The SrTiO of Can Zaing wherein
3Be n type strontium titanates SrA
xTi
1-xO
3Or Sr
1-xLa
xTiO
3Membraneous material, A are Nb or Ta;
The perhaps SrTiO of Can Zaing
3Be p type strontium titanates SrB
xTi
1-xO
3, B is In, Ga or Mn, the span of x is 0.005～0.5.
9. by claim 2 or the 3 described laser detectors that each utilizes oxide multilayered membrane material to make, it is characterized in that: described iron-based alloy La
1-xA
xMnO
3, A is Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr, its x value is 0.05～0.4.
10. by claim 1,2 or 3 described any laser detectors that utilize oxide multilayered membrane material to make, it is characterized in that: described first electrode (3) is for directly to weld with indium or scolding tin, or make a point, a line, or around the gold, silver or the aluminium electrode of a circle of iron-based alloy film edge with vacuum coating or magnetically controlled sputter method.
11. by claim 1,2 or 3 described any laser detectors that utilize oxide multilayered membrane material to make, it is characterized in that: described second electrode (4) is connected on the doped oxide film, adopt chemical corrosion method, ion beam etching method or when the system film, manifest a point of doped oxide film at the edge of sample with plate washer, expose a limit, or reserve a circle of outer, be used to connect second electrode (4); Second electrode (4) directly welds with indium or scolding tin, or with vacuum coating or magnetically controlled sputter method evaporation gold, silver or aluminium electrode.
12. by the described laser detector that utilizes oxide multilayered membrane material to make of claim 4, it is characterized in that: its resistance of resistance (5) is 0.01～1M Ω.
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| RU2012120083A (en) * | 2009-10-16 | 2013-11-27 | Конинклейке Филипс Электроникс Н.В. | PHOTOSENSITIVE LAYER AND LAYER ASSEMBLY |
| CN101871818B (en) * | 2010-06-25 | 2012-05-23 | 清华大学 | Infrared detector |
| CN115894025B (en) * | 2022-11-10 | 2023-07-04 | 微集电科技(苏州)有限公司 | Lanthanum manganate ceramic-based light absorber and application and preparation method thereof |
| CN115626825B (en) * | 2022-11-10 | 2023-05-09 | 江苏大学 | Alumina/lanthanide perovskite ceramic composite light absorber and preparation method thereof |
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|---|---|---|---|---|
| CN85200313U (en) * | 1985-04-01 | 1985-12-20 | 中国科学院物理研究所 | High sensitive, fast-response, calorimetry type and pulse laser detector |
| CN2050161U (en) * | 1989-04-20 | 1989-12-27 | 吉林大学 | Passing type ag-bi film laser detector |
| US5621238A (en) * | 1994-02-25 | 1997-04-15 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow band semiconductor detector |
| US20020121647A1 (en) * | 2001-03-02 | 2002-09-05 | Taylor Geoff W. | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
| CN2567553Y (en) * | 2002-04-16 | 2003-08-20 | 中国科学院上海技术物理研究所 | Three-band laser probe for photoelectric laser detecting system |
-
2004
- 2004-07-30 CN CNB2004100711743A patent/CN100412518C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85200313U (en) * | 1985-04-01 | 1985-12-20 | 中国科学院物理研究所 | High sensitive, fast-response, calorimetry type and pulse laser detector |
| CN2050161U (en) * | 1989-04-20 | 1989-12-27 | 吉林大学 | Passing type ag-bi film laser detector |
| US5621238A (en) * | 1994-02-25 | 1997-04-15 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow band semiconductor detector |
| US20020121647A1 (en) * | 2001-03-02 | 2002-09-05 | Taylor Geoff W. | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
| CN2567553Y (en) * | 2002-04-16 | 2003-08-20 | 中国科学院上海技术物理研究所 | Three-band laser probe for photoelectric laser detecting system |
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