CN100412518C - Laser detector made of oxide multilayer film material - Google Patents

Abstract

The invention relates to a fast-response broadband laser detector made of oxide multilayer film material, comprising: a chip made by epitaxially growing doped oxide and photoresponsive material layers on one side of the substrate of an oxide single crystal substrate , the doped oxide is doped strontium titanate or doped barium titanate epitaxially grown on the oxide single crystal substrate; the photoresponsive layer is a doped lanthanum manganate thin film layer; On the lanthanum thin film, the second electrode is arranged on the doped oxide, one end of the two electrode leads is respectively connected to the first electrode and the second electrode, and the other end of the electrode lead is a signal output end. The detector is a photovoltaic photodetector, which directly generates a voltage signal when light is irradiated, without any auxiliary power supply and electronic circuit. Its response band ranges from ultraviolet to far infrared, and can respond to laser pulses with femtosecond pulse width. The leading edge of the voltage pulse generated by the laser pulse is less than 1.5ns, the half width is less than 2ns, and the full pulse width is only a few ns.

Description

Laser detector made of oxide multilayer film material

technical field

The invention relates to a laser detector, in particular to a fast-response broadband laser detector made of oxide multilayer film material.

Background technique

The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and scientific research, but also has a very wide range of applications in military, national defense, production and life. Although people have developed many different types of laser detectors such as pyroelectricity, photoelectricity, pyroelectricity, etc., the work for novel laser detectors is still people's interest and ongoing work, and the applicant is also in this regard Obtained the following patents for laser detectors, such as patent number: ZL89202869.6; patent number: ZL89220541.5; patent number: ZL90202337.3, patent number: ZL90205920.3; Made of electrical materials, the photoresponse of the detector is not fast enough, and the response band is not wide enough.

The magnetoresistance properties of doped lanthanum manganate materials have been studied a lot, and recently people have also observed the photoelectric properties of doped lanthanum manganate films (such as literature 1, Time dependence of laser-inducedthermoelectric voltages in La _1-x Ca _x MnO ₃ and YBa ₂ Cu ₃ O _7-δ thin films, PX Zhang et al., Appl. Phys. Lett., Vol.84, No.21, 4026 (2002)), but the pulse width of its photoresponse is on the order of ms, Therefore, it cannot be used to detect and measure pulsed laser waveforms with a laser pulse width less than ms.

Contents of the invention

The object of the present invention is to overcome the defects of slow photoresponse speed and narrow response band of the above-mentioned detector; provide a voltage signal directly generated after light irradiation, without any auxiliary power supply and electronic circuit; and can detect the energy and power of the laser And waveform, its response band is from ultraviolet to far infrared, it can respond to laser pulse with femtosecond pulse width, the half width of voltage pulse can be less than 2ns, and the full width of pulse can reach several ns. It is made of oxide multilayer film material Fast response broadband laser detector.

The purpose of the present invention is achieved like this:

The laser detector made of oxide multilayer film material provided by the present invention includes: an oxide single crystal substrate is a substrate 1, a photoresponsive material layer 2, a first electrode 3, a second electrode 4 and electrode leads 6 ; It is characterized in that: it also includes an epitaxially grown doped oxide film 7, the doped oxide film 7 is arranged between the substrate 1 and the photoresponsive material layer 2, and the doped oxide film is doped strontium titanate Or doped barium titanate film 7, the photoresponsive material layer 2 is a doped lanthanum manganate film layer, forming a chip with a two-layer structure of doped oxide-doped lanthanum manganate; the first electrode 3 is arranged on the doped manganate On the lanthanum film 2, the second electrode 4 is arranged on the doped oxide film 7; the electrode leads 6 are two, one end of one electrode lead 6 is connected to the first electrode 3, and the other electrode lead 6 One end of the two electrode leads 6 is connected to the second electrode 4, and the other end of the two electrode leads 6 is a signal output end. It also includes a metal casing, the above-mentioned chip is installed in a metal casing, and the metal casing has a shielding effect on external electromagnetic interference.

It also includes a resistor 5, the two ends of the resistor 5 are respectively connected to the output ends of the two electrode leads 6. The resistor 5 is mainly for improving the response speed. Since the structure of the heterojunction has capacitive characteristics, the resistor 5 discharges the voltage generated after laser irradiation, and its resistance value is 0.01-1 MΩ.

It also includes epitaxially growing an insulating layer 8 on the doped oxide film layer 7, and the doped lanthanum manganate film 2 is epitaxially grown on the insulating layer 8 to form a doped oxide-insulating layer-doped lanthanum manganate oxide iso texture.

It also includes growing a layer of doped strontium titanate or doped barium titanate or doped lanthanum manganate epitaxially on one side of the substrate 1 as a doped oxide film 7, and on the other side of the oxide single crystal substrate as the bottom 1 The doped lanthanum manganate film is epitaxially grown to form a doped oxide-oxide substrate-doped lanthanum manganate oxide heterojunction.

The oxide single crystal substrate 1 includes: lanthanum aluminate (LaAlO ₃ ), strontium titanate (SrTiO ₃ ), barium titanate (BaTiO ₃ ), zirconia (ZrO ₂ ), lanthanum aluminate (LaAlO ₃ ) or magnesium oxide (MgO).

The insulating layer 7 includes: lanthanum aluminate (LaAlO ₃ ), strontium titanate (SrTiO ₃ ), barium titanate (BaTiO ₃ ), zirconia (ZrO ₂ ), lanthanum manganate (LaMnO ₃ ) or magnesium oxide ( MgO), the thickness of the insulating layer is 1 nm to 500 nm.

The doped BaTiO ₃ includes: n-type barium titanate BaA _x Ti _1-x O ₃ or Ba _1-x La _x TiO ₃ film material, wherein A is Nb or Ta; p-type barium titanate BaB _x Ti _1-x O ₃ , wherein B is In, Ga or Mn; all x values range from 0.005 to 0.5.

The doped SrTiO ₃ includes: n-type strontium titanate SrA _x Ti _1-x O ₃ or Sr _1-x La _x TiO ₃ film material, wherein A is Nb or Ta; p-type strontium titanate SrB _x Ti _1-x O ₃ , wherein B is In, Ga or Mn; all x values range from 0.005 to 0.5.

The doped lanthanum manganate film layer is R _1-x A _x MnO ₃ , and the thickness of the doped lanthanum manganate film 2 is 0.8 nm to 2 μm; wherein R is La; wherein A includes: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; the value of x is 0.05-0.4.

The electrode 3 can be a point, a line, or a circle surrounding the edge of the doped lanthanum manganate film 2 . The second electrode 4 is connected on the doped oxide thin film, and a point of the doped oxide can be exposed at the edge of the sample by chemical etching or ion beam etching, or by using a baffle plate when forming the film, and an edge is exposed. Or leave a circle on the outer edge for connecting the electrode 4. The first electrode 3 and the second electrode 4 can be directly soldered with indium or solder, or gold, silver or aluminum electrodes can be vapor-deposited by methods such as vacuum coating or magnetron sputtering.

Whether it is a laser detector with a two-layer structure of doped oxide-doped lanthanum manganate, a laser detector with a three-layer structure of doped oxide-insulating layer-doped lanthanum manganate, or a doped oxide-oxide The laser detector with substrate-doped lanthanum manganate structure has the same effect on detecting laser light. When the pulsed laser is irradiated on the surface of the doped lanthanum manganate film, after the doped lanthanum manganate film absorbs the laser pulse, a voltage signal will be generated between the doped oxide 7 and the doped lanthanum manganate 2. This effect is called It is the photovoltaic effect. Whether it is a two-layer structure or a three-layer structure, there is a junction capacitance between the doped oxide and the doped lanthanum manganate, so a resistor 5 is connected in parallel between the doped oxide 7 and the doped lanthanum manganate 2, It acts as a discharge, reducing the discharge time and eliminating the influence of the junction capacitance on the response speed. If the width of the pulse voltage signal generated by the pulsed laser is not considered, the resistor 5 may not be connected.

The fast-response broadband laser detector made of oxide multilayer film material provided by the present invention has the advantage that it can be directly Epitaxial growth of doped oxide, insulating layer and photoresponsive layer doped lanthanum manganate on the oxide single crystal substrate, or directly doped oxide, doped lanthanum manganate insulating layer and a photoresponsive material layer 2. The fabricated chip becomes a photovoltaic type photodetector by making two electrodes; the preparation method is simple. The photodetector directly generates a voltage signal when light is irradiated, without any auxiliary power supply and electronic circuit. It can detect various laser parameters such as laser energy, laser power, and laser pulse waveform. The response band of the photodetector is from ultraviolet to far infrared, and it is a fast-response broadband laser detector. The detection process is an ultra-fast process. The leading edge of the pulse voltage signal generated by photovoltaics reaches the ns level. Not only the laser energy with femtosecond pulse width can be detected, but also the laser waveform with ns pulse width can be detected. A mJ laser pulse can generate a voltage signal of hundreds of mV, which has high sensitivity. Therefore, the laser detector made of the oxide multilayer film material provided by the present invention is widely used in military affairs, national defense, scientific research, production and life.

Description of drawings

Figure 1. Laser detector with doped oxide-doped lanthanum manganate two-layer structure.

Figure 2. A laser detector with a three-layer structure of doped oxide-insulating layer-doped lanthanum manganate.

Figure 3. A laser detector with a three-layer structure of doped oxide-oxide substrate-doped lanthanum manganate.

Figure 4. The La _0.7 Sr _0.3 MnO ₃ /SrNb _0.01 Ti _0.99 O ₃ two-layer structure laser detector was stored and recorded with a 500M oscilloscope, and the voltage signal generated by the YAG laser output wavelength 1.06μm and pulse width 25ps laser pulse was measured.

Figure 5. La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ /SrNb _0.01 Ti _0.99 O ₃ three-layer structure laser detector is stored and recorded with a 500M oscilloscope, and the laser pulse generated by the YAG triple frequency laser with an output wavelength of 355nm and a pulse width of 15ps is measured voltage signal.

The illustrations are as follows:

1-Oxide single crystal substrate; 2-Photoresponsive material layer; 3-First electrode;

4-the second electrode; 5-resistance; 6-electrode lead;

7-doped oxide; 8-insulating layer.

Detailed ways

Example 1

Referring to Figure 1, a laser detector with a two-layer structure of doped oxide-doped lanthanum manganate is prepared, and the following is combined with the specific preparation process to carry out the fast-response broadband laser detector structure made of oxide multilayer film materials according to the present invention. Explain in detail. Laser molecular beam epitaxy equipment is selected, the substrate 1 is a SrTiO ₃ single crystal substrate with a size of 3×3cm ² , and a SrNb _0.1 Ti _0.9 O ₃ doped strontium niobium titanate target is used, and its SrNb _0.1 Ti _0.9 O ₃ doped niobium titanium Strontium oxide epitaxially grown on the substrate 1 as a doped oxide film 7, and then a 300nm-thick La _0.7 Sr _0.3 MnO ₃ photoresponsive material layer 2 was epitaxially grown on the doped oxide SrNb _0.1 Ti _0.9 O ₃ film layer 7 In this way, a laser detector with a La _0.7 Sr _0.3 MnO ₃ /SrNb _0.1 Ti _0.9 O ₃ /SrTiO ₃ doped oxide-doped lanthanum manganate two-layer structure is formed on the SrTiO ₃ oxide substrate 1 . The fabricated sample was cut into a 1×1cm ² slice as a detector chip, and a φ2mm circle was etched out of La _0.7 Sr _0.3 MnO ₃ at one corner of the detector core by ion beam etching technology, and the doped On the strontium niobate titanate film surface, use indium to weld the second electrode 4 with a size of about φ1mm on the edge of the strontium niobate titanate film 7, and use indium to weld a second electrode 4 with a size of about φ1mm on a corner surface of the La _0.7 Sr _0.3 MnO ₃ film. An electrode 3; use two φ0.1mm copper wires as the electrode leads 6, and weld one end of the two φ0.1mm copper electrode leads 6 to the first electrode 3 and the second electrode 4 respectively with indium; select a resistance of 2Ω Make a resistor 5, and weld its two ends to the output ends of the two electrode leads 6 respectively; in this way, the detector core is prepared, put the detector core into an aluminum detector shell, and lead it out with a coaxial cable connector. output.

Select a 500M oscilloscope, use the two-layer oxide film material laser detector prepared in the above embodiment 1, and measure the laser pulse of the YAG laser output wavelength 1.06 μm and pulse width 25ps. Figure 4 is a laser pulse stored and recorded by the detector with an oscilloscope. The resulting voltage signal waveform.

The rising time of the leading edge of the voltage signal is only ~1.5ns, the half width is only ~3ns, and the laser energy of 1mJ can reach a voltage signal of hundreds of mV. Therefore, the detector is not only an ultrafast process, but also very sensitive.

Example 2

Manufactured according to the structure of Example 1, except that SrNb _0.005 Ti _0.995 O ₃ is used instead of SrNb _0.1 Ti _0.9 O ₃ as the doped oxide film 7, and a laser detector with a two-layer structure of doped oxide-doped lanthanum manganate is prepared .

Example 3

According to the structure of Example 1, except that SrNb _0.5 Ti _0.95 O ₃ is used instead of SrNb _0.1 Ti _0.9 O ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 4

According to the structure of Example 1, except that BaNb _0.1 Ti _0.9 O ₃ is used instead of SrNb _0.1 Ti _0.9 O ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 5

According to the structure of Example 1, except that BaIn _0.1 Ti _0.9 O ₃ is used instead of SrNb _0.1 Ti _0.9 O ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 6

According to the structure of Example 1, except that La _0.05 Sr _0.95 MnO ₃ is used instead of La _0.7 Sr _0.3 MnO ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 8

According to the structure of Example 1, except that La _0.05 Sr _0.95 MnO ₃ is used instead of La _0.7 Sr _0.3 MnO ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 9

According to the structure of Example 1, except that La _0.7 Ba _0.3 MnO ₃ is used instead of La _0.7 Sr _0.3 MnO ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 10

According to the structure of Example 1, except that La _0.7 Ga _0.3 MnO ₃ is used instead of La _0.7 Sr _0.3 MnO ₃ as the doped oxide film 7, a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 11

Manufactured according to the structure of Example 1, the La _0.7 Sr _0.3 MnO ₃ is etched into a line with a width of 2 mm on one side of the detector core by chemical etching, and the surface of the strontium niobium titanate film is exposed by etching, and the indium doped strontium titanate film surface is exposed. The edge of the strontium niobate titanate 7 is welded to the second electrode 4 with a width of 1mm, and a laser detector with a two-layer structure of doped oxide-doped lanthanum manganate is prepared.

Example 12

In the fabrication of the structure in Example 1, a LaAlO ₃ oxide single crystal substrate was used instead of a SrTiO ₃ oxide single crystal substrate as the substrate 1 to prepare a laser detector with a doped oxide-doped lanthanum manganate two-layer structure.

Example 13

Manufactured according to the structure of Example 1, the SrTiO ₃ oxide single crystal substrate was replaced by a MgO single crystal substrate as the substrate 1, and a laser detector with a doped oxide-doped lanthanum manganate two-layer structure was prepared.

Example 14

According to the structure of Example 1, a _ZrO2 single crystal substrate is used instead of a _SrTiO3 oxide single crystal substrate as the substrate 1, and a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 15

According to Example 1, a ZrO ₂ single crystal substrate is used instead of a SrTiO ₃ oxide single crystal substrate as the substrate 1, and a laser detector with a doped oxide-doped lanthanum manganate two-layer structure is prepared.

Example 16

Manufactured according to the structure of Example 11, the La _0.7 Sr _0.3 MnO ₃ is etched into a line with a width of 2mm on one side of the detector core by chemical etching, and the surface of the niobium-doped strontium titanate film is exposed by etching, and magnetron sputtering is used. device, sputtering 0.5mm wide silver on a 2mm wide La _0.7 Sr _0.3 MnO ₃ film surface as the first electrode 3, and preparing a laser detector with a two-layer structure of doped oxide-doped lanthanum manganate.

Example 17

Referring to FIG. 2 , a laser detector with a three-layer structure of doped oxide-insulating layer-doped lanthanum manganate is prepared. The structure of this embodiment will be described in detail below in conjunction with the specific preparation process. Using laser molecular beam epitaxy equipment, on a SrTiO ₃ substrate 1 with a size of 2cm×2cm, epitaxially epitaxially 500nm thick SrNb _0.1 Ti _0.9 O ₃ film as doped oxide 7, doped oxide 7 on SrNb _0.1 Ti _0.9 O ₃ Epitaxially grow 200nm thick SrTiO ₃ on the insulating layer 8 as the insulating layer 8, and then epitaxially grow a 300nm thick La _0.7 Sr _0.3 nO ₃ thin film on the insulating layer SrTiO ₃ thin film 8 as the photoresponsive material layer 2, on the strontium titanate substrate 1 Form a laser detector sample with a three-layer structure of La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ /SrNb _0.1 Ti _0.9 O ₃ , and then cut it into a detector chip with a size of 1×0.5cm ² ; At one corner of the detector chip, the photoresponsive material layer 2La _0.7 Sr _0.3 MnO ₃ and the insulating layer 8SrTiO ₃ are etched into a circle of φ2mm, and the etching reveals the SrNb _0.1 Ti _0.9 O ₃ doped strontium niobium titanate film surface , use indium to weld the second electrode 4 of about φ1mm indium on the φ2mm round surface of the strontium niobate titanate thin film 7, and weld the second electrode 4 of about φ1mm circle at one corner surface of the La _0.7 Sr _0.3 MnO ₃ thin film layer 2 with indium An electrode 3; use two φ0.2mm copper wires as electrode leads 6, and weld one end of the two φ0.1mm copper electrode leads 6 to the first electrode 3 and the second electrode 4 respectively with indium; select 0.01Ω The wire is used as resistance 5, and its two ends are respectively welded to the output ends of two electrode leads 6; in this way, the detector core is prepared completely, and the detector core is put into a copper detector shell, and the output is led out with a coaxial cable connector. end.

Select a 500M oscilloscope, use the La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ /SrNb _0.1 Ti _0.9 O ₃ three-layer structure laser detector epitaxially grown on the strontium titanate substrate in this embodiment, and measure the output wavelength of the YAG triple frequency laser 355nm laser pulse with a pulse width of 15ps. Figure 4 is the voltage signal waveform generated by storing and recording a laser pulse of the detector with an oscilloscope. It can be seen from Figure 4 that the rising time of the leading edge of the voltage signal generated by the pulsed laser is only ~1.5ns, the half width is only ~3ns, and the laser energy of 1mJ can reach a voltage signal of hundreds of mV. Therefore, the three-layer detector, like the two-layer detector, is not only an ultrafast process, but also has a high sensitivity.

Example 18

Made according to the structure of Example 17, a layer of 1nm thick _LaAlO3 film was grown on the doped oxide film layer 7 as the insulating layer 8, and the rest of the structure was the same as that of Example 17, that is, _La0.7 was prepared on the strontium titanate substrate 1. Sr _0.3 MnO ₃ /LaAlO ₃ /SrNb _0.1 Ti _0.9 O ₃ three-layer laser detector.

Example 19

According to the structure of Example 17, a 500nm thick ZrO film is used as the insulating layer 8, that is, a laser detector with a three-layer structure of La _0.7 Sr _0.3 MnO ₃ /ZrO/SrNb _0.1 Ti _0.9 O ₃ is prepared on the strontium titanate substrate 1 .

Example 20

According to the structure of Example 17, a 50nm thick MgO film is used as the insulating layer 8, that is, a laser detector with a three-layer structure of La _0.7 Sr _0.3 MnO ₃ /MgO/SrNb _0.1 Ti _0.9 O ₃ is prepared on the strontium titanate substrate 1 .

Example 21

Using the pulsed laser film forming method, according to the structure of Example 17, a laser detector with a three-layer structure of La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ /SrNb _0.1 Ti _0.9 O ₃ epitaxially grown on a strontium titanate substrate was fabricated.

Example 22

Using the magnetron sputtering film-forming method, according to the structure of Example 17, a laser detector with a three-layer structure of La _0.7 Sr _0.3 MnO ₃ /SrTiO ₃ /SrNb _0.1 Ti _0.9 O ₃ epitaxially grown on a strontium titanate substrate was fabricated .

Example 23

Fabricate according to the structure of Example 17, replace the 500nm thick SrNb _0.1 Ti _0.9 O ₃ thin film with 400nm thick La _0.7 Sr _0.3 MnO ₃ as the doped oxide 7, and prepare La _0.7 Sr _0.3 MnO on the strontium titanate substrate 1 ₃ /SrTiO ₃ /La _0.7 Sr _0.3 MnO ₃ three-layer structure laser detector.

Example 24

Fabricate according to the structure of Example 17, replace the 500nm thick SrNb _0.1 Ti _0.9 O ₃ thin film with 400nm thick BaNb _0.3 Ti _0.7 O ₃ as the doped oxide 7, and prepare La _0.7 Sr _0.3 MnO on the strontium titanate substrate 1 ₃ /SrTiO ₃ /BaNb _0.3 Ti _0.7 O ₃ three-layer structure laser detector.

Example 25

Referring to FIG. 3 , a laser detector with a three-layer structure of doped oxide-oxide substrate-doped lanthanum manganate is prepared, and the structure of this embodiment is described in detail in conjunction with the following specific preparation process. Using laser molecular beam epitaxy equipment, epitaxy a 500nm-thick SrNb _0.3 Ti _0.7 O ₃ film on one side of a double-sided polished 2-inch SrTiO ₃ substrate 1 as doped oxide 7, and on the SrTiO ₃ substrate 1 Epitaxially grow a 300nm-thick La _0.8 Ca _0.2 MnO ₃ thin film photoresponsive material layer 2 on the other surface of the , forming La _0.8 Ca _0.2 MnO ₃ /SrTiO ₃ /SrNb _0.3 Ti _0.7 O ₃ doped oxide-oxide substrate- A laser detector sample doped with a three-layer structure of lanthanum manganate was cut into a detector chip with a size of 1×1cm ² . Use indium to weld the second electrode 4 of about φ2mm on the surface of SrNb _0.3 Ti _0.7 O ₃ doped strontium niobium titanate 7, and use indium to weld about φ1mm at one corner surface of the La _0.8 Ca _0.2 MnO ₃ thin film photoresponsive layer 2 the first electrode 3; use two φ0.2mm copper wires as the electrode leads 6, and weld one end of the two φ0.1mm copper electrode leads 6 to the first electrode 3 and the second electrode 4 respectively with indium; select 1KΩ The resistor is used as the resistor 5, and its two ends are respectively welded to the output ends of the two electrode leads 6; in this way, the detector core is prepared completely, and the detector core is put into a copper detector shell, and the coaxial cable connector is used to lead out output.

Example 26

According to the structure of Example 25, the LaAlO ₃ oxide single crystal substrate was selected as the substrate 1, and La _0.8 Ca _0.2 MnO ₃ /LaAlO ₃ /SrNb _0.3 Ti _0.7 O ₃ doped oxide substrate was prepared on the LaAlO ₃ substrate 1. A laser detector with a three-layer structure of object-oxide substrate-doped lanthanum manganate.

Example 27

According to the structure of Example 25, MgO is used instead of SrTiO ₃ as oxide substrate 1, and La _0.8 Ca _0.2 MnO ₃ /MgO/SrNb _0.3 Ti _0.7 O ₃ doped oxide-oxide is prepared on MgO substrate 1 Substrate-doped lanthanum manganate three-layer laser detector.

Example 28

According to the structure of Example 25, use 400nm thick BaNb _0.3 Ti _0.7 O ₃ instead of 500nm thick SrNb _0.3 Ti _0.7 O ₃ film as doped oxide 7 to prepare La _0.8 Ca _0.2 MnO ₃ /SrTiO ₃ /BaNb _0.3 Ti _0.7 O ₃ doped oxide-oxide substrate-doped lanthanum manganate triple layer structure laser detector sample.

Example 29

薄膜作掺杂氧化物7，制备

/SrTiO₃/掺杂氧化物-氧化物衬底-掺杂锰酸镧三层结构的激光探测器样品。Make according to the structure of embodiment 25, replace 500nm thick La _0.8 Ca _0.2 MnO ₃ with 200nm thick

thin film as doped oxide 7, prepared

/SrTiO ₃ / Laser detector sample with doped oxide-oxide substrate-doped lanthanum manganate triple layer structure.

Claims (12)

1. A laser detector made of an oxide multilayer film material, comprising a substrate (1) of an oxide single crystal substrate, a photoresponsive material layer (2), a first electrode (3), and a second electrode (4) and electrode leads (6); it is characterized in that: it also includes an epitaxially grown doped oxide film (7), and the doped oxide film (7) is arranged on the substrate (1) and the photoresponsive material layer ( 2); the doped oxide film is a doped strontium titanate or doped barium titanate film (7), and the photoresponsive material layer (2) is a doped lanthanum manganate film layer, forming a doped oxide- A chip with a two-layer structure doped with lanthanum manganate; the first electrode (3) is arranged on the doped lanthanum manganate film (2), and the second electrode (4) is arranged on the doped oxide film (7); the There are two electrode leads (6), one end of one electrode lead (6) is connected to the first electrode (3), and one end of the other electrode lead (6) is connected to the second electrode (4). The other end of the electrode lead wire (6) is a signal output end. 2. A laser detector made of an oxide multilayer film material, comprising a substrate (1) of an oxide single crystal substrate, a photoresponsive material layer (2), a first electrode (3), and a second electrode (4) and electrode lead wire (6); It is characterized in that: also comprise epitaxially growing a doping oxide thin film layer (7) on the oxide single crystal substrate substrate (1), described doping oxide thin film The layer (7) is doped strontium titanate or doped barium titanate thin film, and an insulating layer (8) is epitaxially grown on the doped oxide thin film layer (7), as the photoresponsive material layer (2) The doped lanthanum manganate film is epitaxially grown on the insulating layer (8), forming a chip with a three-layer structure of doped oxide-insulating layer-doped lanthanum manganate; the first electrode (3) is arranged on the doped manganese acid On the lanthanum film (2), the second electrode (4) is arranged on the doped oxide film (7) below; the electrode leads (6) are two, and one end of one electrode lead (6) is connected to the The first electrode (3) is connected, and one end of another electrode lead wire (6) is connected with the second electrode (4), and the other end of the two electrode lead wires (6) is a signal output end; the two ends of the resistance (5) They are respectively connected to the output ends of the electrode leads (6). 3. A laser detector made of an oxide multilayer film material, comprising a substrate (1) of an oxide single crystal substrate, a photoresponsive material layer (2), a first electrode (3), and a second electrode (4) and electrode leads (6); it is characterized in that: also comprise epitaxially growing a doping oxide thin film layer (7) on one side of oxide single crystal base substrate (1), described doping oxide Thin film layer (7) is doped strontium titanate or doped barium titanate thin film; on the other side of the oxide single crystal substrate (1) epitaxially grows a doped as photoresponsive material layer (2) The mixed lanthanum manganate film forms a chip with a three-layer structure of doped oxide-oxide substrate-doped lanthanum manganate; the first electrode (3) is arranged on the upper doped lanthanum manganate film (2), and the second The two electrodes (4) are arranged on the doped oxide film (7) below, and there are two electrode leads (6), one end of one electrode lead (6) is connected to the first electrode (3), One end of another electrode lead wire (6) is connected to the second electrode (4), and the other end of the two electrode lead wires (6) is a signal output end; the two ends of the resistor (5) are respectively connected to the electrode lead wire (6) output connection. 4. The laser detector utilizing oxide multilayer film material to make according to claim 1, is characterized in that: also comprise a resistance (5); The two ends of resistance (5) and two electrode leads (6) respectively The signal output terminal connection. 5. According to any one of claim 1, 2, 3, or 4, the laser detector made of oxide multilayer film material is characterized in that: the oxide single crystal substrate substrate is titanic acid Strontium, barium titanate, lanthanum aluminate, magnesium oxide or zirconium oxide. 6. according to any one of claim 1, 2, 3, or 4, the laser detector utilizing oxide multilayer film material to make, it is characterized in that: the described doped lanthanum manganate film layer is R _{1- x} A _x MnO ₃ , where R is La; A is Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; its x value is 0.05-0.4; doped lanthanum manganate film ( 2) The thickness is 0.8 nm to 2 μm. 7. The laser detector utilizing oxide multilayer film material to make according to claim 2, characterized in that: the insulating layer (7) is lanthanum aluminate, strontium titanate, barium titanate, zirconium oxide, Lanthanum manganate or magnesium oxide; the thickness of the insulating layer (7) is 10nm-500nm. 8. According to any one of claim 1, 2, 3, or 4, the laser detector made of oxide multilayer film material is characterized in that: the doped oxide film layer is doped titanic acid Strontium thin film or doped barium titanate thin film, wherein doped BaTiO ₃ is n-type barium titanate BaA _x Ti _1-x O ₃ or Ba _1-x La _x TiO ₃ thin film material, A is Nb or Ta; Or doped BaTiO ₃ is p-type barium titanate BaB _x Ti _1-x O ₃ , B is In, Ga or Mn, and the value of x ranges from 0.005 to 0.5; The doped SrTiO ₃ is n-type strontium titanate SrA _x Ti _1-x O ₃ or Sr _1-x La _x TiO ₃ film material, A is Nb or Ta; Alternatively, the doped SrTiO ₃ is p-type strontium titanate SrB _x Ti _1-x O ₃ , B is In, Ga or Mn, and x ranges from 0.005 to 0.5. 9. According to any one of claim 2 or 3, the laser detector made of oxide multilayer film material is characterized in that: the doped lanthanum manganate La _1-x A _x MnO ₃ , A is For Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr, the value of x is 0.05-0.4. 10. According to any one of claim 1, 2 or 3, the laser detector made of oxide multilayer film material is characterized in that: the first electrode (3) is directly welded with indium or solder, Or use vacuum coating or magnetron sputtering to make a point, a line, or a circle of gold, silver or aluminum electrodes around the edge of the doped lanthanum manganate film. 11. According to any one of claims 1, 2 or 3, the laser detector made of oxide multilayer film material is characterized in that: the second electrode (4) is connected to the doped oxide film , using chemical etching method, ion beam etching method or using a baffle to expose a point of the doped oxide film on the edge of the sample during film formation, exposing an edge, or leaving a ring on the outer edge for connection The second electrode (4); the second electrode (4) is directly welded with indium or solder, or evaporated with gold, silver or aluminum electrodes by vacuum coating or magnetron sputtering. 12. The laser detector made of oxide multilayer film material according to claim 4, characterized in that: the resistance value of the resistor (5) is 0.01-1 MΩ.

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