CN100458381C - Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material - Google Patents
Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material Download PDFInfo
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- CN100458381C CN100458381C CNB2005100827015A CN200510082701A CN100458381C CN 100458381 C CN100458381 C CN 100458381C CN B2005100827015 A CNB2005100827015 A CN B2005100827015A CN 200510082701 A CN200510082701 A CN 200510082701A CN 100458381 C CN100458381 C CN 100458381C
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Abstract
The present invention relates to photodetector made of doping oxide and silicon heterojunction material, with ultra-fast responding, broadband, high sensitivity and anti-radiation. It contains casing, optical sensor, first electrode, second electrode, two electrode leading wires, insulating piece, first metal block, second metal block and metal bolt; wherein said optical sensor consisting of one or more of series connected doping oxide and silicon heterojunction material decetor chip and installed in one metal enclosure, leading out output port by coaxial cable coaxial cable joint, said decetor being photoproduction volt type photoelectric detector, directly generating voltage alarm by light radiating without any auxiliary accessory power supply and electronic circuit. Its responding wave band is from ultraviolet to far infrared, capable of responding femtosecond pulse width laser pulse, response speed reaching ps, capable of detecting pulsed laser waveform with hundred of ps pulsewidth. Said invention has very high sensitivity and strong radioresistance ability.
Description
Technical field
The present invention relates to a kind of photo-detector, the super fast response, wideband section, high sensitivity and the radioresistance photo-detector that particularly utilize doping oxide and Si heterojunction material to make.
Background technology
For the detection of energy, power, pulsewidth and the waveform etc. of light, in scientific research, military affairs, national defence, production and life, have very widely and use.Although people have been developed the photo-detector as number of different types such as thermoelectricity, photoelectricity, pyroelectricities, be still people's work interested and that always carrying out for the work of novel photo-detector.The applicant also obtains the patent of following several laser detectors, for example patent No.: ZL89202869.6 in this respect; The patent No.: ZL89220541.5; The patent No.: ZL90202337.3, the patent No.: ZL90205920.3; But the detector of above-mentioned several patents all adopts piezoelectric to make, and this detector photoresponse is fast inadequately.The applicant has also applied for adopting the photo-detector patent of the heterojunction of oxide and silicon, for example number of patent application: 200410069052.0; Number of patent application: 200510071811.1; Number of patent application: 200510071810.7; Although the response time of above-mentioned several patents and sensitivity before are improved, but can not satisfy the requirement of a lot of work, particularly scientific research and more military special applications.In addition, because the membraneous material capability of resistance to radiation that the making detector is used is limited, for the measurement of high power and macro-energy, the detector core is damage easily often.
Summary of the invention
The objective of the invention is to overcome that above-mentioned detector speed of photoresponse is fast not enough, sensitivity is high not enough and shortcoming such as detector core subject to damage, provide a kind of doping oxide and Si heterojunction material of utilizing to make detector chip, or with one or N detector chip series connection, be detected the side incident of light from detector chip, after rayed, directly produce voltage signal, without any need for the auxiliary power supply and the radiation-resistant photo-detector of ultrafast high sensitivity of electronic circuit; This photo-detector can be surveyed energy, power and the waveform of light, and its response wave band can respond the laser pulse of femtosecond pulsewidth from the ultraviolet to the near infrared, and the response time reaches psec.
The object of the present invention is achieved like this:
Super-fast wide-wave-band high sensitivity photo-detector provided by the invention, comprise: optical sensor chip 1, on the silicon substrate of optical sensor chip 1, make second electrode 3, on the doped oxide film of chip 1, make 2, two electrodes of first electrode connect respectively first contact conductor 4 and second contact conductor 4 '; It is characterized in that: also comprise first derby 8 and second derby 9; First lead-in wire, 4 and second lead-in wire 4 ' can be fixed on optical sensor chip 1 by first derby 8 and second derby 9 perhaps connects with indium or soldering or conducting resinl will connect; One end of described first contact conductor 4 and second contact conductor 4 ' is connected with second electrode 3 with first electrode 2 respectively, first contact conductor 4 and second contact conductor 4 ' the other end be signal output part; Described optical sensor chip 1 is made by doping oxide and Si heterojunction material, and the side any facing each other of this optical sensor chip 1 is as being detected the plane of incidence of light from heterojunction material.
In above-mentioned technical scheme, comprise that also the optical sensor chip 1 that optical sensor chip 1 is made by N piece doping oxide and Si heterojunction material is cascaded, wherein the doping oxide of first optical sensor chip 1 surface contacts lamination with the silicon substrate face of second optical sensor chip 1, electrode behind the lamination on the outmost doped oxide film is first electrode 2, and the electrode on the outmost silicon chip is second electrode 3.Described N is the 2-100 piece.
The shape of described second derby 9 comprises: circular, square or make the fixed mount of " ∪ " or " recessed " shape.
In above-mentioned technical scheme, also comprise a resistance 5, its resistance is 0.01 Ω～1k Ω.The two ends of this resistance 5 respectively with first contact conductor 4 and second contact conductor 4 ' output terminal be connected.Described resistance 5 mainly is in order further to improve response speed, because the structure of heterojunction has capacitance characteristic, so the voltage that produces after 5 pairs of rayed of resistance plays discharge process, thereby further improves its response speed.
In above-mentioned technical scheme, also comprise insulating trip 6, derby 8, derby 9 and metallic screw 7; Described first derby 8 is fixed on the face of optical sensor chip 1 second electrode 3 (or first electrode 2), and the another side of first derby 8 contacts with insulating trip 6, is connected by metallic screw 7 with an end of second derby 9 of a U-shaped; First electrode 2 of optical sensor chip 1 (or second electrode 3) is by metallic screw 7 ' be connected with the other end of U-shaped second derby 9; Between second derby, 9 inwalls and first derby 8, be connected first contact conductor 4 and second contact conductor 4 ', first contact conductor 4 and second contact conductor 4 ' another termination be connected resistance 5, and first contact conductor 4 and second contact conductor 4 ' on draw output terminal.
In above-mentioned technical scheme, also comprise metal shell, it is installed in the metal shell, draw output terminal with coaxial fitting.
In above-mentioned technical scheme, the detector chip that described doping oxide and Si heterojunction material are made comprises:
Growth one deck strontium titanate doping thin layer is Sr on silicon chip substrate
1-xR
xTiO
3Or SrM
yTi
1-yO
3, the thickness of strontium titanate doping film 2 is 0.8nm～5 μ m; Wherein R comprises: La, Dy, Y, Sm or Gd; Wherein M comprises: Nb, Sb, Ta, In, Mn, W, Mg or Fe, and its x value is 0.005～0.5, the y value is 0.01～0.5 to make chip;
Or growth one deck barium titanate doping thin layer is Ba on silicon chip substrate
1-xQ
xTiO
3Or BaN
yTi
1-yO
3, the thickness of doped titanic acid titanate thin film 2 is 0.8nm～5 μ m; Wherein Q comprises: La, Y or Sm; Wherein N comprises: Nb, Sb, Ta, In, Mn, Mg or Fe; Its x, y value are 0.01～0.5 to make chip;
Or one deck doped oxide film layer S that on silicon chip substrate, grow
1-xT
xMnO
3, the thickness of doped oxide film is 0.8nm～5 μ m; Wherein S comprises: La, Pr, Nd or Sm; Wherein T comprises: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; Its x value is 0.01～0.5 to make chip.
Described first electrode 2 or second electrode 3 can also can directly weld with indium or tin etc. with method evaporation gold, silver or aluminium electrodes such as vacuum coating or magnetron sputterings.
Super fast response, wideband section, high sensitivity and the radioresistance photo-detector that utilizes doping oxide and Si heterojunction material to make provided by the invention, its characteristics are, described optical sensor chip 1, can be the detector chip that a slice doping oxide and Si heterojunction material are made, respectively from doped oxide film and silicon two sides extraction electrode 2 and electrode 3; In order further to improve detector sensitivity and to increase photosensitive area, also can the detector chip that 2,3 or a plurality of doping oxide and Si heterojunction material are made be composed in series.Carry out the series connection of detector chip, at first at two surperficial evaporation metal electrodes of oxide and Si heterojunction material, then the doping oxide of detector chip surface is contacted with the silicon face of another detector chip and carry out lamination, outmost doped oxide film is first electrode 2 behind the lamination, and outmost silicon chip is second electrode 3.For the optical sensor that is composed in series with detector chip, when carrying out photodetection, the two ends of each detector chip all produce a photogenic voltage voltage, the voltage that therefore obtains at the two ends of optical sensor be exactly each detector chip both end voltage addition and.So the optical sensor that utilizes detector chip to be composed in series, the area of not only accepting light increases, and sensitivity improves, and because the detector chip series connection reduces the junction capacitance of heterojunction, the effect of detector can be faster.
Be detected the side incident of light from heterojunction, employed silicon of detector and relevant doping oxide, its energy gap is substantially all at 1～1.3eV, can absorb the light from the ultraviolet to the near-infrared wavelength, simultaneously in doping oxide and silicon, form photo-generated carrier, because the effect of heterojunction boundary potential barrier forms photogenic voltage voltage at the two ends of detector chip, be a kind of photogenic voltage type photodetector, without any need for auxiliary additional power source and electronic circuit.Owing to be side incident, detector chip just can prepare with narrow bar shaped heterojunction material, thereby its electric capacity can be very little, especially adopt the optical sensor that is composed in series, has ultrafast photoresponse, the forward position of pulse voltage signal that photogenic voltage produces reaches the ps magnitude, the laser energy of not only detectable femtosecond pulsewidth, and the laser waveform of detectable hundreds of ps pulsewidth.In addition, owing to adopt side incident, when the strength ratio of incident light is big, the light entrance face of optical sensor 1 was damaged to some extent, the performance of detector does not have big influence yet, therefore has stronger capability of resistance to radiation.Owing between optical sensor, all there is a junction capacity, therefore, play discharge process at the two ends of optical sensor resistance 5 in parallel, reduce discharge time and eliminate the influence of junction capacity response speed.If do not consider the width of pulse voltage signal that pulsed light produces, also can not connect resistance 5.Photo-detector provided by the present invention can be surveyed multiple parameters such as the energy, power, pulse waveform of light, all is widely used at aspects such as scientific research, military affairs, national defence, production and lives.
Description of drawings
Fig. 1. by the plain type optical sensor chip 1 of a detector chip making.
Fig. 2. by the plain type optical sensor chip 1 of three detector chip series connection making.
Fig. 3. by the optical sensor chip 1 of four detector chip series connection making.
Fig. 4. use the 2.5GHz oscillograph, the optical sensor chip 1 by a lanthanum manganese oxygen doping thing and the making of silicon heterogenous detector chip of store recording, the voltage signal that measurement YAG laser output wavelength 1.064 μ m, pulsewidth 25ps laser pulse are produced, its rise time is 330ps, halfwidth 580ps.
Drawing is described as follows:
The 1-optical sensor; 2-first electrode; 3-second electrode;
4-first contact conductor; 4 '-the second contact conductor 5-resistance;
The 6-insulating trip; The 7-metallic screw; 8-first derby;
9-second derby
Embodiment
With reference to figure 1, do optical sensor chip 1 by a lanthanum manganese oxygen doping thing and Si heterojunction material, prepare a super-fast wide-wave-band high sensitivity photo-detector.
Present embodiment is a n type silicon chip with a substrate,, p type La thick at its direct epitaxial growth 300nm
0.7Sr
0.3MnO
3The light responsive material layer forms La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si cuts into heterojunction material and is of a size of 1 * 0.2cm
2 Optical sensor chip 1; With the monox of hydrofluorite removal silicon face, weld second electrode 3 that is about φ 2mm with indium at the silicon face of optical sensor chip 1, with the La of indium at optical sensor chip 1
0.7Sr
0.3MnO
3Surface-welding first electrode 2 of film; The copper cash of two φ 0.1mm is made contact conductor, and with indium one end of first contact conductor 4 of two φ 0.1mm copper and second contact conductor 4 ' is welded on respectively on first electrode 2 and second electrode 3; Selecting resistance for use is the resistance 5 of 0.01 Ω, and with its two ends respectively with the welding of the output terminal of first contact conductor 4 and second contact conductor 4 '; A 1cm side of this optical sensor chip 1 is as being detected the plane of incidence of light from heterojunction material, optical sensor chip 1 just prepares complete like this, optical sensor chip 1 is packed in the probe body that alloy aluminum makes, draw output terminal with coaxial fitting, make the photo-detector of making optical sensor chip 1 by a detector chip.
Select the 2.5G oscillograph for use, make the photo-detector of optical sensor chip 1 of an above-mentioned detector chip, measure the laser pulse of YAG laser output wavelength 1.06 μ m, pulsewidth 25ps, Fig. 4 is with laser pulse of oscillograph store recording detector, the waveform voltage signal that is produced.
The rising edge ascending time of photogenic voltage pulse voltage signal is 330ps, halfwidth 580ps.The laser energy of 1mJ can mV up to a hundred voltage signal.Therefore, this detector is not only a ultrafast process, and has very high sensitivity.
With reference to figure 2, select 2 inches p type silicon chips for use, direct thick, the n type La of epitaxial growth 100nm thereon
0.7Te
0.3MnO
3The film preparation heterojunction material, remove the oxide layer on Si surface with FH after, with vacuum coating respectively at La
0.7Te
0.3MnO
3With Si surface evaporation silverskin, the La of silver-plated film
0.7Te
0.3MnO
3The rectangle that the two-layer dissimilar materials of/Si cuts into 10mm * 2mm is as detector chip, three described detector chips is cascaded makes optical sensor chip 1, the wherein La of first detector chip
0.7Te
0.3MnO
3Film surface contacts lamination with the silicon substrate face of second photo detector chip, analogizes the La of first photo detector chip behind the lamination in proper order
0.7Te
0.3MnO
3 First electrode 2 of welding φ 0.2mm copper cash on the film surface; Second electrode 3 of the silicon substrate face welding φ 2mm of the 3rd photo detector chip.Utilize 2 φ 0.2mm copper electrodes to do first contact conductor 4 and second contact conductor 4 ', each fixes one first derby 8 and second derby, 9, the first contact conductors 4 can be connected with optical sensor chip 1 with second derby 9 by first derby 8 with second contact conductor 4 ' two surfaces of the optical sensor chip 1 after series connection.One end of described first contact conductor 4 and second contact conductor 4 ' is connected with second electrode 3 with first electrode 2 respectively, first contact conductor 4 and second contact conductor 4 ' the other end be signal output part; Described optical sensor chip 1 any side facing each other is as being detected the plane of incidence of light from heterojunction material.
With reference to figure 3, select for use and on n type silicon substrate, make one deck SrO cushion, the thick La of epitaxial growth 800nm again
0.95Ba
0.05MnO
3Film uses vacuum coating method at La
0.95Ba
0.05MnO
3With the surface difference lily gilding film of Si, the La behind the lily gilding film
0.95Ba
0.05MnO
3/ Si heterojunction material cuts into the rectangular block of 15mm * 3mm and does photo detector chip, with the La of 8 15mm * 3mm
0.95Ba
0.05MnO
3/ Si photo detector chip is cascaded and makes optical sensor chip 1, the La of first photo detector chip
0.95Ba
0.05MnO
3Film surface contacts lamination with the silicon substrate face of second photo detector chip, analogize in proper order, with the side of optical sensor chip 1 lamination as the plane of incidence that is detected light.Outmost La
0.95Ba
0.05MnO
3Film is done first electrode 2, and outmost n type silicon substrate is done second electrode 3.Select second derby 9 and the metallic screw 7 of a ceramic insulation sheet 6, first derby 8, U-shaped again; Described first derby 8 is fixed on the face of optical sensor chip 1 second electrode 3 (or first electrode 2), and the another side of first derby 8 contacts with ceramic insulation sheet 6, is connected by metallic screw 7 with an end of a U-shaped second derby 9; First electrode 2 of optical sensor chip 1 (or second electrode 3) is by metallic screw 7 ' be connected with the other end of U-shaped second derby 9; Between second derby, 9 inwalls and first derby 8, be connected first contact conductor 4 and second contact conductor 4 ', another termination of these two contact conductors connects the resistance 5 of one 0.01 Ω, and first contact conductor 4 and second contact conductor 4 ' on draw output terminal.
Press the structure fabrication one super-fast wide-wave-band high sensitivity photo-detector of embodiment 3, difference is to use the La of 100 15mm * 3mm
0.95Ba
0.05MnO
3/ Si photo detector chip is cascaded and makes optical sensor chip 1.
Press the structure fabrication of embodiment 3, select for use the resistance of 1k Ω to do resistance 5.
Select n type silicon chip for use, the thick SrTiO of extension 10nm on it
3Make insulation course, again at SrTiO
3The thick La of last epitaxial growth 300nm
0.7Sr
0.3MnO
3Film is made heterojunction, forms La
0.7Sr
0.3MnO
3/ SrTiO
3Three layers of/Si are heterogeneous, this heterojunction material is cut into be of a size of 1 * 0.5cm
2Pane, totally 16 photo detector chip are cascaded and make optical sensor 1, with the side of optical sensor chip 1cm as the plane of incidence that is detected light.With the monox of hydrofluorite removal silicon chip surface, make contact conductor 4 and 4 ' with the copper cash of two φ 0.1mm, and one end of first contact conductor 4 is welded on optical sensor 1 outmost La with indium
0.7Sr
0.3MnO
3On film first electrode 2 and with indium second contact conductor 4 ' an end be welded on optical sensor 1 outmost silicon face second electrode 3; Select for use the lead of 1k Ω to make resistance 5, and with its two ends respectively with first contact conductor 4 and second contact conductor 4 ' the output terminal welding; The optical sensor chip 1 that the photo detector chip that is cascaded is formed is packed in the copper probe body, draws output terminal with coaxial fitting.
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick La of extension 10nm on it
0.99Ga
0.01MnO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick La of extension 10nm on it
0.5Pb
0.5MnO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 8
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick La of extension 10nm on it
0.34Pb
0.33Ga
0.33MnO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Press the structure fabrication of embodiment 2, select 2 inches p type silicon chips for use, direct thereon thick, the n type La of epitaxial growth 0.8nm
0.7Ce
0.3MnO
3The film preparation heterojunction material replaces La
0.7Te
0.3MnO
3/ Si heterojunction material is made the photo-detector of being made optical sensor chip 1 by 3 detector chips.
Press the structure fabrication of embodiment 2, difference is to select for use 2 inches p type silicon chips, direct thereon thick, the n type La of epitaxial growth 5 μ m
0.7Sb
0.33MnO
3The film preparation heterojunction material replaces La
0.7Te
0.3MnO
3/ Si heterojunction material is made the photo-detector of being made optical sensor chip 1 by 3 detector chips.
Embodiment 11
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick La of extension 10nm on it
0.7Nb
0.3MnO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 12
Press the structure fabrication of embodiment 1, difference is to select for use P type silicon chip, the thick SrNb of extension 100nm thereon
0.2Ti
0.8O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 13
Press the structure fabrication of embodiment 1, difference is to select for use P type silicon chip, the thick SrSb of extension 100nm thereon
0.01Ti
0.09O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 14
Press the structure fabrication of embodiment 1, select n type silicon chip for use, thereon the thick SrIn of extension 100nm
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 15
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick SrMn of extension 100nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 16
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick SrTa of extension 100nm thereon
0.3Ti
0.75O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 17
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick SrW of extension 300nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 18
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick SrMg of extension 100nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 19
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Sr of extension 0.8nm thereon
0.9La
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Sr of extension 5 μ m thereon
0.9Y
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 21
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Sr of extension 400nm thereon
0.9Gd
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 22
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Sr of extension 500nm thereon
0.9Sm
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 23
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Sr of extension 5 μ m thereon
0.9Dy
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 24
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick SrFe of extension 200nm thereon
0.3Ti
0.7O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 25
Press the structure fabrication of embodiment 1, difference is to select for use P type silicon chip, the thick BaNb of extension 100nm thereon
0.2Ti
0.8O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 26
Press the structure fabrication of embodiment 1, difference is to select for use P type silicon chip, the thick BaSb of extension 100nm thereon
0.01Ti
0.09O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 27
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaIn of extension 100nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 28
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaMn of extension 100nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 29
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaTa of extension 100nm thereon
0.3Ti
0.75O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaW of extension 300nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 31
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaMg of extension 100nm thereon
0.5Ti
0.5O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 32
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Ba of extension 0.8nm thereon
0.9La
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 33
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Ba of extension 5 μ m thereon
0.9Y
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 34
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Ba of extension 400nm thereon
0.9Gd
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 35
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Ba of extension 500nm thereon
0.9Sm
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 36
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick Ba of extension 5 μ m thereon
0.9Dy
0.1TiO
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 37
Press the structure fabrication of embodiment 1, difference is to select for use n type silicon chip, the thick BaFe of extension 200nm thereon
0.3Ti
0.7O
3Film is made heterojunction, replaces La
0.7Sr
0.3MnO
3The two-layer dissimilar materials of/Si is made the photo-detector of being made optical sensor chip 1 by a detector chip.
Embodiment 38
With reference to figure 3, select for use at p type silicon substrate, at the thick SrNb of its surperficial epitaxial growth 400nm
0.3Ti
0.7O
3Film preparation SrNb
0.3Ti
0.7O
3/ Si heterojunction uses magnetically controlled sputter method at SrNb
0.3Ti
0.7O
3With the surface difference lily gilding film of Si, the SrNb behind the lily gilding film
0.3Ti
0.7O
3/ Si heterojunction material cuts into the rectangular block of 15mm * 4mm and does photo detector chip, with the SrNb of 20 15mm * 4mm
0.3Ti
0.7O
3/ Si photo detector chip is cascaded and makes optical sensor chip 1, the SrNb of first photo detector chip
0.3Ti
0.7O
3Film surface contacts lamination with the silicon substrate face of second photo detector chip, analogize in proper order, with the side of optical sensor chip 1 lamination as the plane of incidence that is detected light.Outmost SrNb
0.3Ti
0.7O
3Film is done first electrode 2, and outmost p type silicon substrate is done second electrode 3.Select a nylon to do second derby 9 and the metallic screw 7 of insulating trip 6, first derby 8, U-shaped again; Described first derby 8 is fixed on the face of optical sensor chip 1 second electrode 3 (or first electrode 2), and the another side of first derby 8 contacts with ceramic insulation sheet 6, is connected by metallic screw 7 with an end of a U-shaped second derby 9; First electrode 2 of optical sensor chip 1 (or second electrode 3) is by metallic screw 7 ' be connected with the other end of U-shaped second derby 9; Between second derby, 9 inwalls and first derby 8, be connected first contact conductor 4 and second contact conductor 4 ', first contact conductor 4 and second contact conductor 4 ' another termination be connected the resistance 5 of one 0.01 Ω, and first contact conductor 4 and second contact conductor 4 ' on draw output terminal, the photo-detector of optical sensor chips 1 is made in preparation by 20 detector chips series connection.
Embodiment 39
Press the structure fabrication of embodiment 38, difference be first contact conductor 4 and second contact conductor 4 ' another termination be not connected resistance 5, directly draw output terminal.
Press the structure fabrication of embodiment 38, difference is to replace nylon to do insulating trip 7 with teflon.
Embodiment 41
Press the structure fabrication of embodiment 38, difference is to replace nylon to do insulating trip 7 with fiberglass.
Embodiment 42
Press the structure fabrication of embodiment 38, difference is to select for use at p type silicon substrate, at the thick BaNb of its surperficial epitaxial growth 400nm
0.3Ti
0.7O
3Film preparation BaNb
0.3Ti
0.7O
3/ Si heterojunction replaces SrNb
0.3Ti
0.7O
3/ Si heterojunction, preparation are made the photo-detector of optical sensor chip 1 by 20 detector chip series connection.
Claims (6)
1. super-fast wide-wave-band optical detector with doping oxide and Si heterojunction material system, comprise: metal shell, optical sensor chip (1) with doping oxide and Si heterojunction material making, on the silicon substrate of described optical sensor chip (1), make second electrode (3), on the doped oxide film of optical sensor chip (1), make first electrode (2); It is characterized in that: also comprise first derby (8) and second derby (9), first contact conductor (4) and second contact conductor (4 ') are fixed on described optical sensor chip (1) by first derby (8) and second derby (9) respectively, or connect or the conducting resinl connection with indium or soldering; One end of described first contact conductor (4) and second contact conductor (4 ') is connected with described second electrode (3) with described first electrode (2) respectively, and the other end of first contact conductor (4) and second contact conductor (4 ') is a signal output part; The side facing each other of described optical sensor chip (1) is the plane of incidence that is detected light, and this optical sensor chip (1) is installed in the described metal shell, draws output terminal with coaxial fitting.
2. super-fast wide-wave-band optical detector with doping oxide and Si heterojunction material system, comprise: metal shell, optical sensor, it is characterized in that: also comprise first derby (8) and second derby (9), described optical sensor is cascaded by N the optical sensor chip of making of doping oxide and Si heterojunction material (1) and forms; Wherein the doped oxide film of first optical sensor chip (1) surface contacts lamination with the silicon substrate face of second optical sensor chip (1), analogize in proper order, make first electrode (2) behind the lamination on the outmost doped oxide film surface, make second electrode (3) on the outmost silicon substrate; First contact conductor (4) is connected with described optical sensor with described second derby (9) by described first derby (8) respectively with second contact conductor (4 '), or connects or the conducting resinl connection with indium or soldering; One end of described first contact conductor (4) and described second contact conductor (4 ') is connected with described second electrode (3) with described first electrode (2) respectively, and the other end of described first contact conductor (4) and described second contact conductor (4 ') is a signal output part; Described optical sensor chip (1) side facing each other is as the plane of incidence that is detected light; This optical sensor is installed in the described metal shell, draws output terminal with coaxial fitting; Described N is the 2-100 piece.
3. by claim 1 or 2 described super-fast wide-wave-band optical detectors, it is characterized in that: also comprise a resistance (5) with doping oxide and Si heterojunction material system; The two ends of described resistance (5) are connected with the signal output part of two contact conductors (4) respectively, and the resistance of this resistance (5) is 0.01Ω～1kΩ。
4. by claim 1 or 2 described super-fast wide-wave-band optical detectors with doping oxide and Si heterojunction material system, it is characterized in that: the described optical sensor chip of making of doping oxide and Si heterojunction material (1) is growth one deck strontium titanate doping thin layer on silicon chip substrate, and described strontium titanate doping thin layer is Sr
1-xR
xTiO
3Or SrM
yTi
1-yO
3, the thickness of this strontium titanate doping film is 0.8nm～5 μ m; Wherein R comprises: La, Dy, Y, Sm or Gd; Wherein M comprises: Nb, Sb, Ta, In, Mn, W, Mg or Fe, and its x value is 0.005～0.5, the y value is 0.01～0.5.
5. by claim 1 or 2 described super-fast wide-wave-band optical detectors with doping oxide and Si heterojunction material system, it is characterized in that: the described optical sensor chip of making of doping oxide and Si heterojunction material (1) is growth one deck barium titanate doping thin layer on silicon chip substrate, and wherein said barium titanate doping thin layer is Ba
1-xQ
xTiO
3Or BaN
yTi
1-yO
3, the thickness of doped titanic acid titanate thin film is 0.8nm～5 μ m; Wherein Q comprises: La, Y or Sm; Wherein N comprises: Nb, Sb, Ta, In, Mn, Mg or Fe; Its x, y value are 0.01～0.5.
6. by claim 1 or 2 described super-fast wide-wave-band optical detectors with doping oxide and Si heterojunction material system, it is characterized in that: the described optical sensor chip of making of doping oxide and Si heterojunction material (1) is growth one deck doped oxide film layer S on silicon chip substrate
1-xT
xMnO
3, the thickness of described doped oxide film is 0.8nm～5 μ m; Wherein S comprises: La, Pr, Nd or Sm; Wherein T comprises: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr; Its x value is 0.01～0.5.
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| CNB2005100827015A CN100458381C (en) | 2005-07-06 | 2005-07-06 | Super-fast wide-wave-band optical detector made by by doped oxide and silicon heterojunction material |
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| CN100458381C true CN100458381C (en) | 2009-02-04 |
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| CN102509743B (en) * | 2012-01-04 | 2013-10-09 | 吉林大学 | Ultraviolet detector based on titanium dioxide/strontium titanate heterojunction and preparation method |
| CN109503151A (en) * | 2018-12-17 | 2019-03-22 | 中国科学院上海硅酸盐研究所 | A kind of BaTiO3Base ferroelectric ceramic material and its preparation method and application |
| CN111755556A (en) * | 2019-03-27 | 2020-10-09 | 中国科学院物理研究所 | High-sensitivity light intensity fluctuation detector based on p-n junction |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367177A (en) * | 1991-07-17 | 1994-11-22 | The United States Of America As Represented By The Secretary Of The Air Force | Wavelength selective heterojunction field effect transistor |
| JPH07193270A (en) * | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | Photo detector and infrared detector |
| CN2480823Y (en) * | 2001-06-29 | 2002-03-06 | 复旦大学 | Silicon-Germanium/silicon heterojunction inner emitting infrared detector |
| CN1371133A (en) * | 2002-02-26 | 2002-09-25 | 南京大学 | High-responsivity photoelectronic detector based on the polarization effect of III family nitride heterojunction structure |
-
2005
- 2005-07-06 CN CNB2005100827015A patent/CN100458381C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367177A (en) * | 1991-07-17 | 1994-11-22 | The United States Of America As Represented By The Secretary Of The Air Force | Wavelength selective heterojunction field effect transistor |
| JPH07193270A (en) * | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | Photo detector and infrared detector |
| CN2480823Y (en) * | 2001-06-29 | 2002-03-06 | 复旦大学 | Silicon-Germanium/silicon heterojunction inner emitting infrared detector |
| CN1371133A (en) * | 2002-02-26 | 2002-09-25 | 南京大学 | High-responsivity photoelectronic detector based on the polarization effect of III family nitride heterojunction structure |
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