CN1956228A - Optical position detector made by heterojunction material mixed with manganate - Google Patents
Optical position detector made by heterojunction material mixed with manganate Download PDFInfo
- Publication number
- CN1956228A CN1956228A CN 200510114583 CN200510114583A CN1956228A CN 1956228 A CN1956228 A CN 1956228A CN 200510114583 CN200510114583 CN 200510114583 CN 200510114583 A CN200510114583 A CN 200510114583A CN 1956228 A CN1956228 A CN 1956228A
- Authority
- CN
- China
- Prior art keywords
- electrode
- optical position
- manganate
- position detector
- make
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Light Receiving Elements (AREA)
Abstract
A light position detector prepared from material of doped managanate hetero-junction is featured as growing a N type of light response film layer formed by material of R1-X AxMnO3 doped manganate on P type of substrate in relative and epitaxial way, setting a set of two electrodes symmetrically at two sides of said film layer for outputting x axle direction voltage signal and another set at another two sides of said film layer for outputting Y axle direction voltage signal, setting said two sets of electrode to be vertical to each other, connecting one end of electrode lead wire to electrode and another end to signal output end.
Description
Technical field
The present invention relates to a kind of optical position sensitive detection parts, particularly a kind of high sensitivity optical position sensitive detection parts of utilizing the doping manganate heterojunction material to make.
Background technology
The phenomenon that the semiconductor light-receiving irradiation produces electromotive force is called photovoltaic effect.If the light uneven irradiation allows a light spot at material surface, photo-generated carrier is diffusion around luminous point, can produce horizontal photovoltaic effect in the luminous point side direction.Horizontal photovoltaic effect people for semiconductor and p-n junction thereof have studied much (as document 1, Lateralphotovoltaic effect in porous silicon, Daniel W.Boeringer and Raphael Tsu, Appl.Phys.Lett., 65 (18), 31 (1994)), utilize this effect also to make semiconductor device for sensing optic position of amorphous silicon (patent No. CN1031779A); But do not satisfy actual needs far away, such as wide spectrum, fast-response, extreme environment etc.
From Canadian Manitoba university found huge magneto-resistor phenomenon in La-Pr-Mn-O since, people had carried out big quantity research to huge magnetic resistance material, comprise A
2B
2O
7(as Ti
2Mn
2O
7), A
1-xT
xBO
3(as La
1-xSr
xMnO
3), T
3-xA
xB
2O
7(as Sr
1.8La
1.2Mn
2O
7) wait compound, wherein A is trivalent rare earth or other triad, and B is a transition metal, and T is a divalent alkaline-earth metal.We have applied for the patent (patent No.: ZL01104460.8), but the horizontal photovoltaic effect of doping manganate heterojunction material is not done discussion with semiconductor and lanthanum manganate material making p-n junction.
Summary of the invention
The object of the present invention is to provide a kind of huge magneto-resistance effect that both had, the optical position detector that the multi-functional doping manganate heterojunction material making of horizontal photovoltaic effect is arranged again, this device has wide spectrum, highly sensitive performance, has bright prospects aspect Position Control, target following and the computer application; A kind of method of utilizing semiconductor technology to make this optical position detector also is provided.
The object of the present invention is achieved like this:
The optical position sensitive detection parts of utilizing the doping manganate heterojunction material to make provided by the invention, comprise: shell, p type or n type substrate 1 and corresponding thereon epitaxial growth one deck n type or p type photoresponse thin layer 2, and electrode and contact conductor are set on photoresponse thin layer 2; It is characterized in that described photoresponse thin layer 2 is the doping manganate material film, its doping manganate is R
1-xA
xMnO
3, wherein R comprises: La, Pr, Nd or Sm, and A comprises: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr, the x value is 0.01～0.5; Described electrode is divided into first electrode 3, second electrode 4 is one group, 2 electrodes are symmetricly set on the both sides on the photoresponse thin layer 2, the voltage signal of this group electrode output X-direction, third electrode 5, the 4th electrode 6 are one group, be symmetricly set on the other both sides of photoresponse thin layer 2, the voltage signal of this group electrode output Y direction, and two arrays of electrodes is vertical mutually; One end of contact conductor 7 is connected with electrode, and the other end of contact conductor 7 is signal output parts.
In above-mentioned technical scheme, described substrate is selected from: Si, SrTiO
3: Nb, BaTiO
3: Nb, BaTiO
3: In, SrTiO
3: In, ZnO, SrCu
2O
2, CuAlO
2, CuGaO
2, La
0.05Sr
0.95TiO
3P type or n type substrate.
In above-mentioned technical scheme, described photoresponse thin layer 2 is an individual layer doping manganate material film, or the doping manganate film of sandwich construction.
In above-mentioned technical scheme, described optical position detector can be made a unit on substrate, or the multielement array of 2 or 2 above single-element detectors, promptly adopt technology such as particle beams etching or chemical corrosion on the good photoresponsive layer 2 of growing, etch the chip of 2 above unit, on each unit chip, prepare electrode with technologies such as magnetron sputtering or vacuum evaporation again, first electrode 3 wherein, second electrode 4 is first group, with third electrode 5, the 4th electrode 6 is second group, every contact conductor 7 is connected with each electrode respectively, and each unit is connected with lead-in wire by electrode; Chip is packed in the aluminium shell, with coaxial fitting extraction electrode output.
In above-mentioned technical scheme, described electrode can be made point, wire or plane; Can connect with elargol, or directly weld, also can prepare platinum, gold, silver or aluminium electrode with methods such as vacuum coating, magnetron sputtering photoetching and chemical corrosions with indium.
The preparation method of optical position sensitive detection parts provided by the invention may further comprise the steps:
1. utilize the filming technology of laser molecular beam epitaxy, pulsed laser deposition, molecular beam epitaxy, magnetron sputtering, facing targets sputtering, electron beam evaporation or viscose process, preparation doping manganate material light rings bottom, wherein film forming condition on substrate: elder generation vacuumizes vacuum chamber and reaches:＜10
-4Pa when heated substrate makes temperature reach 300 ℃-900 ℃, charges into oxygen, presses when oxygen to be: 10
-4During Pa-100Pa, beginning grow doping manganate film, its growth rate is controlled in the 0.05nm-10nm/ condition and range of second, selects the best growing condition on demand, to guarantee the good epitaxial growth of film;
2. prepare electrode and lead-in wire with conventional method, adopt conventional semiconductor packaging process encapsulation then in the enclosure, prepare doping manganate heterojunction optical position sensitive detection parts.
The invention has the advantages that:
The optical position sensitive detection parts of utilizing the doping manganate heterojunction material to make provided by the invention, be both to have had huge magneto-resistance effect, the optical position detector that the multifunctional material making of horizontal photovoltaic effect is arranged again, this device output photosensor signal is bigger, 200 millivolts can be reached, the position of measuring light and the amount of displacement can be used for.Therefore doping manganate heterojunction optical position sensitive detection parts provided by the invention industry (as, the Position Control of lathe, target following, precision positioning), computer (as, the Chinese character entering apparatus), national defence (as, laser alignment, light source tracking) etc. the aspect have widely and to use.
Optical position detector of the present invention can be used film-forming methods such as laser molecular beam epitaxy, pulsed laser deposition, molecular beam epitaxy, magnetron sputtering, facing targets sputtering, electron beam evaporation or viscose process, the direct epitaxial growth of lamination of n type or p type doping manganate or n type and p type at Si, SrTiO
3: Nb, BaTiO
3: Nb, BaTiO
3: In, SrTiO
3: In, ZnO, SrCu
2O
2, CuAlO
2, CuGaO
2, La
0.05Sr
0.95TiO
3On multiple p type or n type substrate, utilize semiconductor technology, can on a doping manganate chip, make the individual unit device, can also prepare the doping manganate heterojunction optical position sensitive detection parts of a plurality of unit, multielement array formula, therefore preparation method of the present invention is simple, is easy to industrialized mass production.
Description of drawings
Fig. 1 is doping manganate heterojunction optical position sensitive detection parts structural representations
1 * 3 alignment formula structural representation that Fig. 2 is made up of 3 unit doping manganate heterojunction optical position detectors
4 * 1 alignment formula structural representations that Fig. 3 is made up of 4 unit doping manganate heterojunction optical position detectors
2 * 3 array formula structural representations that Fig. 4 is made up of 6 unit doping manganate heterojunction optical position detectors
4 * 4 planar array type multi-factor structure schematic diagrames that Fig. 5 is made up of 16 unit doping manganate heterojunction optical position detectors
Fig. 6 is La
0.67Ca
0.33MnO
3The horizontal photovoltaic effect curve of/Si optical position sensitive detection parts, abscissa are the position coordinates of luminous point between electrode 3,4, and initial point is the mid point between the electrode 3,4.The photogenic voltage voltage of ordinate between electrode 3,4, recording.Measuring with laser wavelength is 308nm, and pulsewidth is 25ns, and energy density is 0.5mJ/mm
2
Drawing is described as follows:
The 1-substrate; 2-photoresponse thin layer; 3-first electrode;
4-second electrode; The 5-third electrode; 6-the 4th electrode;
The 7-contact conductor.
Embodiment
Below in conjunction with drawings and Examples structure of the present invention is described in detail
With reference to figure 1, prepare the doping manganate heterojunction material optical position sensitive detection parts with a unit of the present invention: select laser molecular beam epitaxial device for use, direct epitaxial growth La on n type Si single crystalline substrate 1
0.67Ca
0.33MnO
3Photoresponse thin layer 2, wherein the thickness of photoresponse thin layer 2 is 0.5nm, forms La
0.67Ca
0.33MnO
3The two-layer heterostructure sample of/Si; The La for preparing
0.67Ca
0.33MnO
3The two-layer heterojunction sample of/Si cuts into and is of a size of 1 * 1cm
2Chip, with indium at La
0.67Ca
0.33MnO
3On the surperficial symmetric position on limit, the film left and right sides, first electrode 3 is set and second electrode 4 becomes one group; At La
0.67Ca
0.33MnO
3The lip-deep symmetric position place, both sides up and down of film is provided with third electrode 5 and the 4th electrode 6 again; And two arrays of electrodes is vertical mutually, and described electrode is about φ 2mm; Make contact conductor 7 with the copper cash of φ 0.1mm, and with indium one end of φ 0.1mm copper electrode lead-in wire 7 is welded on respectively on the two arrays of electrodes, chip is finished with regard to preparation like this.Chip is packed in the aluminium shell, draw output with coaxial fitting and make optical position sensitive detection parts with a unit.With wavelength is 308nm pulse laser (pulsewidth 25ns, energy density 0.5mJ/mm
2) shine this optical position sensitive detection parts, the voltage signal U of 3,4 output of electrode X-direction
x, the voltage signal U of 5,6 output of electrode Y direction
Y, be the voltage response curves of luminous point when dropping on diverse location as Fig. 6.
With reference to figure 2, making has the doping manganate heterojunction material optical position sensitive detection parts of 3 unit.N type SrTiO with a 3mm * 10mm
3: the Nb monocrystalline is as substrate 1, and uses pulse laser deposition process thereon, directly the thick Nd of epitaxial growth 50nm
0.9Sr
0.1MnO
3 Photoresponsive layer 2, with particle beams lithographic technique at the good Nd that grows
0.9Sr
0.1MnO
3Etch 2mm * 2mm size on the photoresponsive layer 2, its spacing is 3 unit of 0.1mm, become device, on each unit component, prepare two groups of orthogonal first electrodes 3, second electrode 4 of 0.2mm * 0.2mm size with magnetron sputtering technique with 3 unit; With third electrode 5, the 4th electrode 6, from each electrode connection electrode lead-in wire 7, the electrode 5 of each unit component is connected respectively to public electrode, the electrode of adjacent cells device 3,4 is connected in series by shown in Figure 2, prepares 1 * 3 alignment formula optical position detection chip.Chip is packed in the aluminium shell, draw output with coaxial fitting and make optical position sensitive detection parts with 3 unit.
With reference to figure 3, making has the doping manganate heterojunction material optical position sensitive detection parts of 4 unit.N type BaTiO with 5mm * 10mm size
3: the Nb monocrystalline is selected the thick Pr of the direct epitaxial growth 1000nm of molecular beam epitaxy thereon for use as substrate 1
0.5Ba
0.5MnO
3 Photoresponsive layer 2, on epitaxial wafer, etch 4 4mm * 2mm size with particle beams lithographic technique, spacing is 4 unit of 0.2mm, become 4 unit components, two groups of orthogonal platinum electrodes 3 that on each unit component, prepare the gold of 0.1mm * 1mm with vacuum evaporation process, 4 and 5,6, from each electrode connection electrode lead-in wire 7, the electrode 3 of each unit component is connected respectively to public electrode, along directions X, the electrode 4 of each unit component is as signal output electrode, along the Y direction, the electrode 5 of adjacent cells device, 67 are connected in series as signal output electrode by going between, and the electrode 6 of last unit is as the signal output electrode of upper end.Prepare 4 * 1 alignment formula device for sensing optic position chips like this, in the shell of again this 4 * 1 alignment formula device for sensing optic position chip being packed into, with coaxial fitting extraction electrode output.
With reference to figure 4, making has the doping manganate heterojunction material optical position sensitive detection parts of 6 unit.P type SrTiO with 10mm * 10mm size
3: the In monocrystalline is selected the thick La of the direct epitaxial growth 2 μ m of magnetron sputtering method thereon for use as substrate 1
0.77Ce
0.3MnO
3 Photoresponsive layer 2, etching 6 3mm * 4mm size spacing with particle beams etching technics on epitaxial wafer is the unit component of 0.3mm, uses vacuum deposition method to prepare the two arrays of electrodes of the aluminium of φ 0.5mm on each unit, connects lead-in wire 7 from each electrode.Along directions X, the electrode 5 of each unit component among next row is connected to public electrode; Along the Y direction, the electrode 3 of each left unit component is connected to another public electrode.Along directions X, the electrode 3 and 4 of adjacent cells is connected in series as signal output electrode, and the electrode 4 of each right unit is as the output electrode of right-hand member; Along the Y direction, the electrode 5 of last unit and the electrode 6 of lower unit are connected in series as signal output electrode, and the electrode 6 of unit is as the signal output electrode of upper end on each.Prepare 2 * 3 array formula optical position detection chip that 6 unit chips are formed like this, in the shell of again this 2 * 3 array formula device for sensing optic position chip being packed into, with coaxial fitting extraction electrode output.
With reference to figure 5, making has the doping manganate heterojunction material optical position sensitive detection parts of 16 unit.With the n type ZnO single crystalline substrate 1 of 20mm * 20mm size, select the thick La of the direct epitaxial growth 500nm of facing targets sputtering method thereon for use
0.7(Pr, Sr)
0.3MnO
3 Photoresponsive layer 2, the spacing that etches 4mm * 4mm size with particle beams lithographic technique on epitaxial wafer is 16 unit components of 0.1mm.Adopt facing targets sputtering at La
0.7(Pr, Sr)
0.3MnO
3The thick silverskin of preparation 200nm on the layer 2 uses photoetching and chemical corrosion method to prepare the silver electrode 3,4 and 5,6 of φ 0.1mm on each unit, connects lead-in wire 7 from each electrode, is connected in series respectively along X and Y direction by shown in Figure 5.Along directions X, the electrode 5 of each unit component in arranging down is connected to public electrode; Along the Y direction, the electrode 3 of each left unit component is connected to another public electrode.Along directions X, the electrode 3 and 4 of adjacent cells is connected in series as signal output electrode, and the electrode 4 of each right unit is as the signal output electrode of right-hand member; Along the Y direction, the electrode 5 and 6 of adjacent cells is connected in series as signal output electrode, and the electrode 6 of each unit is as the signal output electrode of upper end among the last row.Prepare array formula 4 * 4 multi-element surface array formula optical position detection chip that 16 unit chips are formed like this, in the shell of again this 4 * 4 array formula device for sensing optic position chip being packed into, with coaxial fitting extraction electrode output.
With reference to figure 1, making has the doping manganate pellicular cascade material optical position sensitive detection parts of 1 unit.Press the structure fabrication of embodiment 1, just photoresponsive layer 2 is selected the thick La of 200nm for use
0.7Ce
0.3MnO
3With the thick La of 100nm
0.7Sr
0.3MnO
3Lamination, other structure is with embodiment 1.
With reference to figure 1, photoresponsive layer 2 is selected La for use
0.67Ca
0.33MnO
3, other structure is with embodiment 1.
Embodiment 8
Press embodiment 1 and make, it is the thick La of 1000nm that photoresponsive layer 2 is selected thickness for use
0.9Sn
0.1MnO
2Other structure together
Embodiment 9
Press embodiment 1 and make, it is the thick La of 100nm that photoresponsive layer 2 is selected thickness for use
0.9Sb
0.1MnO
2Other structure is with embodiment 1.
Embodiment 10
Press embodiment 1 and make, it is the thick La of 1 μ m that photoresponsive layer 2 is selected thickness for use
0.65Ta
0.35MnO
3Other structure is with embodiment 1.
Embodiment 11
Press embodiment 1 and make, photoresponsive layer 2 is used La
0.9Nb
0.1MnO
3Replace La
0.67Ca
0.33MnO
3, the thickness of this photoresponsive layer 2 is 10nm; Other structure is with embodiment 1.
Embodiment 12
Press embodiment 1 and make, photoresponsive layer 2 is used La
0.7Pb
0.3MnO
3Replace La
0.67Ca
0.33MnO
3, the thickness of this photoresponsive layer 2 is 150nm; Other structure is with embodiment 1.
Embodiment 13
Press embodiment 2 and make, photoresponsive layer 2 is used La
0.5Te
0.5MnO
3Replace Nd
0.9Sr
0.1MnO
3, the thickness of this photoresponsive layer 2 is 300nm; Other structure is with embodiment 2.
Embodiment 14
Press embodiment 2 and make, photoresponsive layer 2 is used Sm
0.8Ca
0.2MnO
33Replace Nd
0.9Sr
0.1MnO
3, the thickness of this photoresponsive layer 2 is 600nm; Other structure is with embodiment 2.
Embodiment 15
Embodiment 16
Embodiment 17
Embodiment 18
Embodiment 19
Embodiment 20
Embodiment 21
Embodiment 22
Embodiment 23
It should be noted last that: above embodiment is the unrestricted technical scheme of the present invention in order to explanation only, although the present invention is had been described in detail with reference to the foregoing description, those of ordinary skill in the art is to be understood that: structure of the present invention or method are made amendment or be equal to replacement, as with increasing or change the kind and the amount of mixing up in the photoresponsive layer, and not breaking away from any modification or partial replacement of the spirit and scope of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (6)
1. optical position detector that utilizes the doping manganate heterojunction material to make, comprise: shell, p type or n type substrate (1) and corresponding thereon epitaxial growth one deck n type or p type photoresponse thin layer (2), and on photoresponse thin layer (2), electrode and contact conductor are set; It is characterized in that described photoresponse thin layer (2) is the doping manganate material film, its doping manganate is R
1-xA
xMnO
3, wherein R comprises: La, Pr, Nd or Sm, and A comprises: Sr, Ca, Ba, Pb, Sn, Te, Nb, Sb, Ta, Ce or Pr, the x value is 0.01～0.5; Described electrode is divided into first electrode (3), second electrode (4) is one group, 2 electrodes are symmetricly set on the both sides on the photoresponse thin layer (2), the voltage signal of this group electrode output X-direction, third electrode (5), the 4th electrode (6) are one group, be symmetricly set on the other both sides of photoresponse thin layer (2), the voltage signal of this group electrode output Y direction, and two arrays of electrodes is vertical mutually; One end of contact conductor (7) is connected with electrode, and the other end of contact conductor (7) is a signal output part.
2. by the described optical position detector that utilizes the doping manganate heterojunction material to make of claim 1, it is characterized in that described substrate (1) is selected from: Si, SrTiO
3: Nb, BaTiO
3: Nb, BaTiO
3: In, SrTiO
3: In, ZnO, SrCu
2O
2, CuAlO
2, CuGaO
2, La
0.05Sr
0.95TiO
3P type or n type substrate.
3. by the described optical position detector that utilizes the doping manganate heterojunction material to make of claim 1, it is characterized in that described photoresponse thin layer (2) is an individual layer doping manganate material film, or the doping manganate film of sandwich construction.
4. by the described optical position detector that utilizes the doping manganate heterojunction material to make of claim 1, it is characterized in that, also be included in substrate (1) and go up the multielement array optical position detector of making 2 or 2 above unit.
5. by the described optical position detector that utilizes the doping manganate heterojunction material to make of claim 4, it is characterized in that, described multielement array optical position detector is on the photoresponsive layer (2) well of growing, etch described multielement array chip, go up the preparation electrode at the photoresponsive layer (2) of each unit of multielement array chip, first electrode (3) wherein, second electrode (4) is first group, and third electrode (5), the 4th electrode (6) is second group, every contact conductor (7) is connected with each electrode respectively, and each unit is connected with lead-in wire by electrode; Chip is packed in the aluminium shell, draw output with coaxial fitting.
6. by claim 1,2,3, the 4 or 5 described optical position detectors that utilize the doping manganate heterojunction material to make, it is characterized in that described electrode shape is point-like, wire or planar shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510114583 CN1956228A (en) | 2005-10-26 | 2005-10-26 | Optical position detector made by heterojunction material mixed with manganate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510114583 CN1956228A (en) | 2005-10-26 | 2005-10-26 | Optical position detector made by heterojunction material mixed with manganate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1956228A true CN1956228A (en) | 2007-05-02 |
Family
ID=38063416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510114583 Pending CN1956228A (en) | 2005-10-26 | 2005-10-26 | Optical position detector made by heterojunction material mixed with manganate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1956228A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231403A (en) * | 2011-06-20 | 2011-11-02 | 中国石油大学(北京) | Ultraviolet detector |
| CN106229373A (en) * | 2016-08-30 | 2016-12-14 | 浙江理工大学 | Based on β Ga2o3/ NSTO hetero-junctions can the solar blind UV electric explorer and preparation method thereof of zero-power work |
| CN106449889A (en) * | 2016-11-26 | 2017-02-22 | 浙江理工大学 | Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction |
| CN106952975A (en) * | 2017-03-09 | 2017-07-14 | 内蒙古大学 | A kind of inorganic perovskite light absorbent and preparation method thereof |
| CN109148635A (en) * | 2018-08-31 | 2019-01-04 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN110808297A (en) * | 2019-10-25 | 2020-02-18 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
-
2005
- 2005-10-26 CN CN 200510114583 patent/CN1956228A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102231403A (en) * | 2011-06-20 | 2011-11-02 | 中国石油大学(北京) | Ultraviolet detector |
| CN102231403B (en) * | 2011-06-20 | 2013-06-05 | 中国石油大学(北京) | Ultraviolet detector |
| CN106229373A (en) * | 2016-08-30 | 2016-12-14 | 浙江理工大学 | Based on β Ga2o3/ NSTO hetero-junctions can the solar blind UV electric explorer and preparation method thereof of zero-power work |
| CN106449889A (en) * | 2016-11-26 | 2017-02-22 | 浙江理工大学 | Preparation method of solar blind type ultraviolet detector based on Ga2O3/CuAlO2 heterojunction |
| CN106449889B (en) * | 2016-11-26 | 2017-10-31 | 浙江理工大学 | Based on gallium oxide/CuAlO2The preparation method of hetero-junctions solar-blind UV detector |
| CN106952975A (en) * | 2017-03-09 | 2017-07-14 | 内蒙古大学 | A kind of inorganic perovskite light absorbent and preparation method thereof |
| CN109148635A (en) * | 2018-08-31 | 2019-01-04 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN109148635B (en) * | 2018-08-31 | 2020-07-28 | 西安理工大学 | CuAlO2/Ga2O3Ultraviolet photodiode and preparation method |
| CN110808297A (en) * | 2019-10-25 | 2020-02-18 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
| CN110808297B (en) * | 2019-10-25 | 2021-04-06 | 深圳第三代半导体研究院 | AlGaN/GaN heterojunction-based position sensor, preparation method and detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102272944B (en) | Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks | |
| US8906733B2 (en) | Methods for forming nanostructures and photovoltaic cells implementing same | |
| CN1956228A (en) | Optical position detector made by heterojunction material mixed with manganate | |
| CN114784148B (en) | Preparation method of solar cell, solar cell and photovoltaic module | |
| TW201117402A (en) | Multi-junction photoelectric converter, integrated multi-junction photoelectric converter, and method for manufacturing same | |
| CN111916513A (en) | Infrared detector, infrared imager and preparation method of infrared detector | |
| US9425336B2 (en) | Photo active layer by silicon quantum dot and the fabrication method thereof | |
| US11557689B2 (en) | Integrated tandem solar cell and manufacturing method thereof | |
| US20150096612A1 (en) | Back-contact solar cell and manufacturing method thereof | |
| US20160155870A1 (en) | A solar cell structure and a method of its fabrication | |
| KR101002682B1 (en) | Solar cell and manufacturing method thereof | |
| CN108884572A (en) | For manufacturing the method for the layer with perovskite material and the equipment with this layer | |
| CN115633510B (en) | Perovskite ultraviolet-X ray focal plane array detector and preparation method thereof | |
| CN107331672B (en) | Integrated non-planar ultraviolet photoelectric detector of micro-lens array | |
| KR101183111B1 (en) | Unipolar Transparent Vertical Diodes | |
| TWI578552B (en) | Solar cell, solar battery and method for making the same | |
| CN106206826B (en) | A kind of efficiently heterojunction solar battery and preparation method thereof | |
| US20180240920A1 (en) | Solar cell, method for manufacturing the same, and electrical equipment | |
| CN105431951B (en) | The method for constructing concentration photovoltaic system | |
| CN109564978A (en) | The production method of photovoltaic device | |
| CN1750275A (en) | A kind of laser detecting device with super fast response wide band | |
| CN107527962B (en) | A kind of oblique ZnO nano-wire/GaN heterojunction solar battery of high photosensitive area | |
| CN1485935A (en) | Strontium titanate doping and lanthanum manganese oxygen doping giant reluctivity device and its preparing process | |
| CN1485934A (en) | Barium titanate doping giant reluctivity device and its preparing process | |
| CN108400178B (en) | Cross-arrangement layer stacked nanowire thin film solar cell with graded interlayer components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |