CN1468977A - Residual polymer eliminating method - Google Patents
Residual polymer eliminating method Download PDFInfo
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- CN1468977A CN1468977A CNA021563845A CN02156384A CN1468977A CN 1468977 A CN1468977 A CN 1468977A CN A021563845 A CNA021563845 A CN A021563845A CN 02156384 A CN02156384 A CN 02156384A CN 1468977 A CN1468977 A CN 1468977A
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Abstract
The present invention is residual polymer eliminating method. After etching with reaction gas containing carbon fluoride, mixed gas with mixed specific gas is introduced to produce plasma eliminating residual polymer. The specific mixed gas may be oxygen and nitrogen, argon and hydrogen, argon and nitrogen, or oxygen and argon. The mixed gas producing plasma may be used to soften, burn out or even eliminate residual polymer after etching, and this reduce the technological period.
Description
Technical field
The present invention relates to a kind of method of removing the semiconductor technology residue, and particularly relate to a kind of preceding method of removing (Pre-cleaning) residual polyalcohol (Polymer).
Background technology
Dry etch process is to utilize the physical phenomenon of particle bombardment to carry out a kind of technology of membrane attack, wherein a kind of dry etching method that is called plasma etching (Plasma Etching), system utilizes plasma body that the paired film material of the molecular dissociation of reactant gases is had reactive (Reactive) ion, then by the chemical reaction between ion and film, the film that is exposed under the plasma body is reacted into volatility (Volatile) resultant, then detached, carry out etched by vacuum.Though yet this kind method has preferred selectivity, but anisotropic is just poor, so in order to make dry-etching have the two-fold advantage of highly selective and anisotropic etching simultaneously, a kind of being called " reactive ion-etching (Reactive IonEtch is called for short RIE) ", just be developed.
Reactive ion-etching is a kind of between the dry-etching technology that splashes between etching (Sputtering Etch) and the plasma etching.By in conjunction with two kinds of mechanisms of removing film of physics and chemistry, can obtain a kind of two-fold advantage and high etching technique of selectivity that has anisotropic etching concurrently.Therefore, be applicable to and carry out interlayer hole (Via), contact hole (Contact), dual-inlaid technologies such as (Dual Damascene), in addition, also being used in removal for example is that self-aligned contacts window (Self Align CONT), nothing connect boundary's contact hole (Borderless CONT), dual damascene process media layer window and groove etched barrier layer (Stop Layer).
When carrying out dry-etching, can utilize the plasma body that gas produced that contains fluorocarbons (Fluorocarbon Plasma) to carry out etching usually, employed gas is from tetrafluoro-methane (Carbon Tetrafluoride, CF
4) till now octafluoroization four carbon (C
4F
8), octafluoroization five carbon (C
5F
8) or hexafluoroization four carbon (C
4F
6), can be used as the reactant gases that carbon atom and fluorine atom are provided.Yet the removal of residual polyalcohol is an important step one of after etch process is finished.For example octafluoroization four carbon, octafluoroization five carbon or hexafluoroization four carbon gases carry out etching if we use high polymers etching modulation method, usually can produce the polymkeric substance that carbon (C), fluorine (F), nitrogen (N), oxygen (O) element of etc.ing form behind the etch process, and the removal of residual polyalcohol will become a major challenge and the burden of polymkeric substance and photo-resist removal technology thereafter.Particularly, be difficult to only to remove technology usually and remove these residual polyalcohols with polymkeric substance and photo-resist at the etch process of metal interlayer hole, contact hole and dual-inlaid or the like.And these residual polyalcohols will become one of technology disputes such as metal interlayer hole, contact hole and dual-inlaid big factor, also cause product low yield (low yield).
Therefore, after the plasma body that feeding contains carbon fluoride gas carries out etch process, can carry out a step of removing residual polyalcohol.Yet, carrying out polymkeric substance with prior art method removes after the technology, still can go out in substrate polymer residue is arranged via electron microscope observation, and these residual hardened polymkeric substance (harden polymer) constantly use the wet type removing (WetClean) of solvent (solvent) repeated washing also can't remove even if similarly be.
Summary of the invention
Therefore, task of the present invention is to provide a kind of preceding method of removing residual polyalcohol, can soften, burns even remove this etch residue polymkeric substance in advance, to save process time and stable prod output.
Another task of the present invention is to provide a kind of method of removing residual polyalcohol, can remove this etch residue polymkeric substance fully, and has the effect of saving process time and stable prod output.
The present invention proposes a kind of preceding method of removing residual polyalcohol.This method is carried out after the etch process with the reactant gases that contains fluorocarbons, feed the mixed gas that mixes specific gas, remove technology before the plasma body that utilizes mixed gas to produce carries out, wherein mix specific gas and can select for example mixed gas of oxygen and nitrogen, hydrogen and argon gas, argon gas and nitrogen or oxygen and argon gas.Can soften residual polyalcohol, combustion residue polymkeric substance owing to mix the plasma body that specific gas produced, even remove the hardened residual polyalcohol, so can remove this etch residue polymkeric substance fully and can reduce the process time in follow-up removing technology.
In addition, the present invention proposes a kind of method of removing residual polyalcohol, this method is in the removal static step of general etch process, feed the mixed gas that mixes specific gas, remove residual polyalcohol technology before the plasma body that utilizes mixed gas to produce carries out, wherein mix specific gas and can select for example mixed gas of oxygen and nitrogen, hydrogen and argon gas, argon gas and nitrogen or oxygen and argon gas.Cooperate general removing technology afterwards again, to remove residual polyalcohol fully.
In addition, the present invention proposes a kind of method of removing residual polyalcohol again.This method is in general etch process, feed the mixed gas that mixes specific gas, remove residual polyalcohol technology before the plasma body that utilizes mixed gas to produce carries out, wherein mix specific gas and can select for example mixed gas of oxygen and nitrogen, hydrogen and argon gas, argon gas and nitrogen or oxygen and argon gas.Cooperate general removing technology afterwards again, to remove residual polyalcohol fully.
Described according to the first embodiment of the present invention, when the present invention is applied to form the etch process of metal interlayer hole, contact hole and dual-inlaid or the like opening, be in removing electrostatic process (Dechuck), replace the argon gas that uses originally with the mixed gas that mixes specific gas oxygen and nitrogen, hydrogen and argon gas, argon gas and nitrogen or oxygen and argon gas, remove residual polyalcohol technology before the plasma body that utilizes mixed gas to produce carries out simultaneously, this technology only needs 5 seconds.Cooperate general removing technology afterwards again, the hardened residual polyalcohol just can be removed fully.So the present invention not only has the advantage that can thoroughly remove the polymkeric substance of etch residue, and can not increase the process time, and then can stable prod output.
In addition, described according to the second embodiment of the present invention, the present invention is applied to remove the self-aligned contacts window, does not have in the etching removal technology that connects dielectric layer etched barrier layer in boundary's contact hole, the dual damascene process, after removing the blocking layer, feed the mixed gas that mixes specific gas oxygen and nitrogen, hydrogen and argon gas, argon gas and nitrogen or oxygen and argon gas immediately, remove residual polyalcohol technology before the plasma body that utilizes mixed gas to produce carries out.Cooperate general removing technology afterwards again, the hardened residual polyalcohol just can be removed fully.And because preceding removing technology can make polymkeric substance disappear or minimizing, so can shorten or delete follow-up removing step and time, and be not subject to the unsettled influence of follow-up cleaning machine, all helpful to product production stability and shortening output time.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
The simple declaration of accompanying drawing:
Fig. 1 is according to a kind of flow chart of steps of removing residual polyalcohol of one embodiment of the present invention;
Fig. 2 is according to a kind of flow chart of steps of removing residual polyalcohol of another preferred embodiment of the present invention; And
Fig. 3 A and Fig. 3 B are the manufacturing process synoptic diagram that forms interlayer hole opening and groove in the dual damascene process.
The simple declaration of Reference numeral:
100～104,200～204: step numbers
300: substrate
302: the blocking layer
304: groove
306: dielectric layer
308: the photo-resist layer
310: the interlayer hole opening
Embodiment
First embodiment
Fig. 1 is according to a kind of flow chart of steps of removing residual polyalcohol of one embodiment of the present invention, can be applicable in dielectric layer, form the etch process of opening, wherein dielectric layer for example is the silicon oxide dielectric layer, and the opening that forms in dielectric layer for example is metal interlayer hole (Metal Via is called for short MVIA) opening, contact hole (Contact) opening and dual-inlaid (Dual Damascene) opening etc.And the present embodiment employing is the board of magnetic field enhanced reactive ion etching (Magnetic-Enhanced RIE is called for short MERIE) system.
Usually carrying out the employed reactant gases of etching is the gas that contains fluorocarbons, for example is octafluoroization four carbon (C
4F
8), octafluoroization five carbon (C
5F
8) or hexafluoroization four carbon (C
4F
6).Because after carrying out etch process with the board of magnetic field enhanced reactive ion etching system, have that electronics is inhomogeneous and gather the problem of (Accumulation) easily because of its single field direction, and buildup of static electricity is arranged in chip surface, therefore must remove the step of static (Dechuck).In addition, etch process also can produce later polymkeric substance (Polymer) that carbon (C), fluorine (F), nitrogen (N), oxygen (O) element of etc.ing forms and residues in and be difficult to removing on the chip.
Please refer to Fig. 1, step 100, feed the mixed gas that mixes specific gas, the plasma body that utilizes mixed gas to produce is removed electrostatic process, and can carry out preceding removing (Pre-cleaning) residual polyalcohol technology simultaneously, wherein mix the mixed gas of specific gas and can select for example oxygen and nitrogen (O
2+ N
2), hydrogen and argon gas (H
2+ Ar), argon gas and nitrogen (Ar+N
2) or oxygen and argon gas (O
2+ Ar) mixed gas, present embodiment then is to serve as preferred the selection with mixture of oxygen and nitrogen, its ratio of mixture (nitrogen flow/oxygen flow) is for example between 2～0.5, and, if nitrogen flow is xsccm, when oxygen flow is ysccm, then between 50～200sccm, the time of removing electrostatic process is about 5 seconds and gets final product x+y.
When plasma body that mixture of oxygen and nitrogen produced blows to chip surface, not only can remove the electric charge of accumulation on it, and because nitrogen can soften the etch residue polymkeric substance; Oxygen incendivity etch residue polymkeric substance will be so through after this step, hardened polymkeric substance (Harden ploymer) will be easier to be removed by follow-up step 102.
Then, step 102 is removed technology, and this step is that general removing technology for example is that oxygen ashing (Ashing) or wet type are removed (Wet Clean) technology, in order to remove polymkeric substance, photo-resist or the like subject matter.At last, carry out step 104, the technology of end erase residual polyalcohol.
Because in removing the step of electrostatic process, replace the argon gas that uses originally with the plasma body that mixes specific gas, can so that hardened etch residue polymkeric substance be softened, burned, even be removed, cooperate general removing technology afterwards again, the hardened residual polyalcohol just can be removed fully.So the present invention not only has the advantage that can thoroughly remove the polymkeric substance of etch residue, and can not increase the process time, and then can stable prod output (Yield).
Second embodiment
Fig. 2 is according to a kind of flow chart of steps of removing residual polyalcohol of another preferred embodiment of the present invention, can be applicable to the removal technology of blocking layer (Stop Layer), wherein the blocking layer for example is that self-aligned contacts window (Self Align CONT), nothing connect blocking layer of the dielectric layer etch in boundary's contact hole (Borderless CONT), the dual damascene process or the like, and its material for example is silicon nitride, silicon carbide or silicon oxynitride.For the position on above-mentioned blocking layer is described, in dual damascene process, etching removal blocking layer is an example in the step of formation interlayer hole opening, please refer to the manufacturing process synoptic diagram that forms interlayer hole opening and groove in the dual damascene process shown in Fig. 3 A and Fig. 3 B.
Please refer to Fig. 3 A, in substrate 300, be formed with one deck blocking layer 302, and on blocking layer 302, form a dielectric layer 306 with groove 304.Afterwards, in substrate 300, form one deck patterning photo-resist layer 308, and expose blocking layer 302.
Then, please refer to Fig. 3 B, is mask with photo-resist layer 308, carries out etch process, removes the blocking layer 302 that exposes, and continues to be etched to substrate 300, to form an interlayer hole opening 310.
And this one removes between dielectric layer and the dielectric layer or the technology on blocking layer between dielectric layer and the metal level, and normally the reactant gases that contains fluorocarbons with use carries out etching, and wherein reactant gases for example is octafluoroization four carbon, octafluoroization five carbon or hexafluoroization four carbon.Etch process is easy to later to produce the polymer residue that elements such as carbon, fluorine, nitrogen, oxygen form to be difficult to remove on chip.
Therefore, please refer to Fig. 2, step 200, feed the mixed gas that mixes specific gas, before carrying out, removes the plasma body that utilizes mixed gas to produce residual polyalcohol technology, the mixed gas that wherein mixes specific gas is the mixed gas of hydrogen and argon gas, argon gas and nitrogen, oxygen and argon gas or oxygen and nitrogen for example, wherein the nitrogen flow in the mixed gas for example between 1～1000sccm, oxygen flow for example between 1～1000sccm, argon flow amount for example between 1～1000sccm and hydrogen flowing quantity for example between 1～1000sccm.When carrying out treatment process with the mixed gas of oxygen and nitrogen, the ratio of mixture of nitrogen and oxygen (flow) is for example between 2～0.5.When mix feeding the plasma body of above-mentioned mixing specific gas, can remove the etch residue polymkeric substance owing to mix the plasma body of specific gas, so, can reduce the required time of subsequent step 202 widely through after this step.
Then, step 202 is removed technology, and this technology for example is that oxygen ashing or wet type are removed technology, comprises polymkeric substance, photo-resist or the like subject matter in order to removal.At last, carry out step 204, the technology of end erase residual polyalcohol.
The preceding plasma body that mixed gas produced that is fed in the residual polyalcohol technology of removing can be removed the hardened residual polyalcohol.So the present invention not only has the advantage that can thoroughly remove the polymkeric substance of etch residue, and in subsequent technique because the disappearance or the minimizing of polymkeric substance, can shorten or delete follow-up removing step and time, and be not subject to the unsettled influence of follow-up cleaning machine, all helpful to product production stability and shortening output time.
Letter, the present invention is to contain after fluorocarbon carries out etch process as etch gas source, mixed gas with oxygen and argon gas, hydrogen and argon gas, argon gas and nitrogen or oxygen and nitrogen carries out the preceding residual polyalcohol of removing, so that the formed polymkeric substance of etch process is easy to remove in follow-up removing step, with time that shortens technology and the output that promotes technology.
Comprehensive the above, the present invention has the advantage of the following stated at least:
1. the present invention need not additionally increase other step when forming the etch process of opening, can reach the purpose of the polymkeric substance of removing etch residue fully.
2. the present invention is removing between dielectric layer and the dielectric layer or during the blocking layer between dielectric layer and the metal level, mix the plasma cleaning polymkeric substance that specific gas produced because after this removes technology, utilize immediately, so can save the follow-up removing process time as ashing or wet type removing etc.
3. the present invention be because can thoroughly remove etching and make residual polyalcohol, so but than prior art method stable prod output more.
Though the present invention discloses as above in conjunction with a preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; can make a little change and retouching, so protection scope of the present invention should be looked the accompanying Claim person of defining and is as the criterion.
Claims (33)
1. remove the method for residual polyalcohol before one kind, be suitable for removing behind the etch process residual polymkeric substance, wherein this etch process is to use the gas that contains fluorocarbons as etching reaction gas, its step comprises feeding mixes one of the specific gas mixed gas, removes residual polyalcohol technology before the plasma body that utilizes this mixed gas to produce carries out one.
2. remove the method for residual polyalcohol before as claimed in claim 1, wherein this mixed gas comprises oxygen and nitrogen.
3. remove the method for residual polyalcohol before as claimed in claim 2, wherein the nitrogen flow of this mixed gas and oxygen flow ratio of mixture are between 2～0.5.
4. remove the method for residual polyalcohol before as claimed in claim 2, wherein the total flux of this mixed gas is between 50～200sccm.
5. remove the method for residual polyalcohol before as claimed in claim 1, wherein this mixed gas comprises hydrogen and argon gas.
6. remove the method for residual polyalcohol before as claimed in claim 5, wherein the flow of the hydrogen of this mixed gas and argon gas is respectively between 1～1000sccm.
7. remove the method for residual polyalcohol before as claimed in claim 1, wherein this mixed gas comprises argon gas and nitrogen.
8. remove the method for residual polyalcohol before as claimed in claim 7, wherein the flow of the argon gas of this mixed gas and nitrogen is respectively between 1～1000sccm.
9. remove the method for residual polyalcohol before as claimed in claim 1, wherein this mixed gas comprises oxygen and argon gas.
10. remove the method for residual polyalcohol before as claimed in claim 9, wherein the flow of the oxygen of this mixed gas and argon gas is respectively between 1～1000sccm.
11. a method of removing residual polyalcohol, be suitable for removing behind the etch process residual polymkeric substance, wherein this etch process is to use the gas that contains fluorocarbons as etching reaction gas, to form an opening in a dielectric layer, its step comprises:
Carry out one and remove electrostatic process, wherein should remove electrostatic process and feed one of mixing specific gas mixed gas, remove residual polyalcohol technology before the plasma body that utilizes this mixed gas to produce carries out one simultaneously; And
Carry out one and remove technology.
12. the method for removing residual polyalcohol as claimed in claim 11, wherein this mixed gas of this removal electrostatic process feeding comprises oxygen and nitrogen.
13. the method for removing residual polyalcohol as claimed in claim 12, wherein the nitrogen flow of this mixed gas of this removal electrostatic process feeding and oxygen flow ratio of mixture are between 2～0.5.
14. the method for removing residual polyalcohol as claimed in claim 12, the total flux of wherein being somebody's turn to do this mixed gas of removing the electrostatic process feeding is between 50～200sccm.
15. the method for removing residual polyalcohol as claimed in claim 11, wherein this mixed gas of this removal electrostatic process feeding comprises hydrogen and argon gas.
16. the method for removing residual polyalcohol as claimed in claim 11, wherein this mixed gas of this removal electrostatic process feeding comprises argon gas and nitrogen.
17. the method for removing residual polyalcohol as claimed in claim 11, wherein this mixed gas of this removal electrostatic process feeding comprises oxygen and argon gas.
18. the method for removing residual polyalcohol as claimed in claim 11, this step of wherein carrying out this removing technology comprise that ashing and wet type remove one of them.
19. a method of removing residual polyalcohol, be suitable for removing behind the etch process residual polymkeric substance, wherein this etch process is to use the gas that contains fluorocarbons as etching reaction gas, to remove a blocking layer, its step comprises:
Feed and mix one of the specific gas mixed gas, remove residual polyalcohol technology before the plasma body that utilizes this mixed gas to produce carries out one; And
Carry out one and remove technology.
20. the method for removing residual polyalcohol as claimed in claim 19, wherein this mixed gas comprises oxygen and nitrogen.
21. the method for removing residual polyalcohol as claimed in claim 20, wherein the nitrogen flow of this mixed gas and oxygen flow ratio of mixture are between 2～0.5.
22. the method for removing residual polyalcohol as claimed in claim 20, wherein the total flux of this mixed gas is between 50～200sccm.
23. the method for removing residual polyalcohol as claimed in claim 19, wherein this mixed gas comprises hydrogen and argon gas.
24. the method for removing residual polyalcohol as claimed in claim 23, wherein the flow of the hydrogen of this mixed gas and argon gas is respectively between 1～1000sccm.
25. the method for removing residual polyalcohol as claimed in claim 19, wherein this mixed gas comprises argon gas and nitrogen.
26. the method for removing residual polyalcohol as claimed in claim 25, wherein the flow of the argon gas of this mixed gas and nitrogen is respectively between 1～1000sccm.
27. the method for removing residual polyalcohol as claimed in claim 19, wherein this mixed gas comprises oxygen and argon gas.
28. the method for removing residual polyalcohol as claimed in claim 27, wherein the flow of the argon gas of this mixed gas and oxygen is respectively between 1～1000sccm.
29. the method for removing residual polyalcohol as claimed in claim 19, this step of wherein carrying out this removing technology comprise that ashing and wet type remove one of them.
30. the method for removing residual polyalcohol as claimed in claim 19, wherein this blocking layer comprises the blocking layer of the dielectric layer etch in the self-aligned contacts window technology.
31. the method for removing residual polyalcohol as claimed in claim 19, wherein this blocking layer comprises does not have the blocking layer that connects the dielectric layer etch in boundary's contact hole technology.
32. the method for removing residual polyalcohol as claimed in claim 19, wherein this blocking layer comprises the blocking layer of the dielectric layer etch in the dual damascene process.
33. the method for removing residual polyalcohol as claimed in claim 19, wherein the material on this blocking layer comprise silicon nitride, silicon carbide and silicon oxynitride one of them.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/200,268 US20030022513A1 (en) | 2001-07-24 | 2002-07-19 | Polymer debris pre-cleaning method |
| US10/200,268 | 2002-07-19 |
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| Publication Number | Publication Date |
|---|---|
| CN1468977A true CN1468977A (en) | 2004-01-21 |
| CN1226455C CN1226455C (en) | 2005-11-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02156384 Expired - Fee Related CN1226455C (en) | 2002-07-19 | 2002-12-18 | Residual polymer eliminating method |
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| CN100377308C (en) * | 2005-12-02 | 2008-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Particle-removing process before semiconductor etching |
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| CN116136031A (en) * | 2023-04-18 | 2023-05-19 | 度亘核芯光电技术(苏州)有限公司 | Reactive ion etching method and preparation method of vertical cavity surface emitting laser |
| CN116136031B (en) * | 2023-04-18 | 2023-08-22 | 度亘核芯光电技术(苏州)有限公司 | Reactive ion etching method and preparation method of vertical cavity surface emitting laser |
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