CN100361275C - Etching method of preparation, and pattermizing method of preparation - Google Patents
Etching method of preparation, and pattermizing method of preparation Download PDFInfo
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- CN100361275C CN100361275C CNB200410085084XA CN200410085084A CN100361275C CN 100361275 C CN100361275 C CN 100361275C CN B200410085084X A CNB200410085084X A CN B200410085084XA CN 200410085084 A CN200410085084 A CN 200410085084A CN 100361275 C CN100361275 C CN 100361275C
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- Prior art keywords
- layer
- etching
- bottom anti
- patterning photoresist
- photoresist layer
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000005530 etching Methods 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title 2
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 49
- 229920000642 polymer Polymers 0.000 claims abstract description 21
- 238000000059 patterning Methods 0.000 claims description 52
- 238000004140 cleaning Methods 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- -1 oxonium ion Chemical class 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000007493 shaping process Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000012940 design transfer Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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Abstract
The present invention relates to an etching method of manufacture, which provides a material layer first, and a bottom anti-reflecting layer and a patterned photoresist layer are formed on the material layer. Then, with the patterned photoresist layer as an etching mask, the bottom anti-reflecting layer is etched, and then a cleansing step is carried out to eliminate polymer attached on the surface of the patterned photoresist layer. Finally, with the patterned photoresist layer as the etching mask, the material layer is etched.
Description
Technical field
The present invention relates to a kind of etch process, particularly relate to and include removing produces the step of chemical polymerization thing because of the etching bottom anti-reflection layer etch process and Patternized technique.
Background technology
Along with the fast development of IC industry, requiring under the more and more higher situation of circuit integration, the design of entire circuit element size also is forced to advance toward the direction that size does not stop to dwindle.And the photoetching technique of existing KrF248nm can not satisfy its demand gradually, so can obtain less live width to reach the requirement of minification in order to want, the ArF193nm photoetching technique has become best selection.But the short light of wavelength ratio will cause higher reflectivity at the interface of photoresist layer and chip, make defined pattern generating deviation or flaw.And reverberation is stronger, and the control of pattern is also unstable further, is that as metals such as aluminium, this phenomenon is the most obvious when belonging to high reflective material at definition polysilicon gate pattern or ground particularly.Therefore, under the dual restriction of live width size and high reflectance, make critical size (Critical Dimension, control CD) more the difficulty.
The flow process of existing etch process is at first forming material layer in substrate.Then, on material layer, form bottom anti-reflection layer, and on bottom anti-reflection layer, form the photoresist layer.Then, utilize a traditional photoetching process patterning and define the photoresist layer, to form a patterning photoresist layer.Then, with patterning photoresist layer as etching mask, the etching bottom anti-reflection layer.Then, again with patterning photoresist layer as etching mask, material layer is carried out etching step, so that design transfer is to material layer.
But in the process of above-mentioned etching bottom anti-reflection layer, regular meeting causes the deposition of chemical polymerization thing at patterning photoresist laminar surface.And the deposition of this chemical polymerization thing can cause the change of the pattern of patterning photoresist layer, has influence on the pattern integrity after the photoresist layer pattern is transferred to material layer then.And, in the etch process after this, because the pattern of patterning photoresist layer changes, and its live width is extended, so, be the mask etching material layer with this patterning photoresist layer after, the critical size that then can the cause element transfer of error or pattern to some extent is incorrect.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of etch process exactly, this technology can have the problem that produces polymer deposition because of the etching bottom anti-reflection layer now to solve by a cleaning, and it can avoid influencing the accuracy of critical size, and can reach the purpose of effective reduction live width.
Another purpose of the present invention provides a kind of Patternized technique, and this technology can make the photoresist layer have comparatively accurate patterns, helps the integrality of pattern after the design transfer, and can make the live width downsizing.
The present invention proposes a kind of etch process, and this technology provides a material layer earlier, and has been formed with bottom anti-reflection layer and patterning photoresist layer on material layer.Afterwards, be etching mask with this patterning photoresist layer, the etching bottom anti-reflection layer.Then, carry out a cleaning, to remove attached to the polymer on the patterning photoresist laminar surface.Then, be etching mask with patterning photoresist layer again, etched material layer.
According to a preferred embodiment of the present invention, above-mentioned cleaning uses an ionized gas to remove polymer.More preferably, this ionized gas has high relatively etch-rate for polymer, and for material layer low relatively etch-rate is arranged.
According to a preferred embodiment of the present invention, above-mentioned material layer is a polysilicon layer.Above-mentioned material layer is a polysilicon layer, and then the employed ionized gas of cleaning preferably is selected from the gas that contains fluorine ion, oxonium ion and combination thereof.
According to a preferred embodiment of the present invention, above-mentioned bottom anti-reflection layer is an antireflecting inorganic layer or an organic antireflection layer.
According to a preferred embodiment of the present invention, after forming patterning photoresist layer, also comprise finishing (trim) patterning photoresist layer.
The present invention is because between the step of the step of etching bottom anti-reflection layer and etched material layer, carries out a cleaning removing the chemical polymerization thing, so can guarantee the integrality after the design transfer, to reach the purpose of critical dimension reductionization.
The present invention also proposes a kind of Patternized technique, at first, forms bottom anti-reflection layer and photoresist layer on a material layer.Then, carry out a photoetching process, with patterning photoresist layer.Afterwards, finishing (trimming) patterning photoresist layer, and be etching mask with patterning photoresist layer, the etching bottom anti-reflection layer.Then, carry out a cleaning, to remove attached to the polymer on the patterning photoresist laminar surface.Continuing it, is etching mask with patterning photoresist layer, etched material layer.The step of the step of wherein etching bottom anti-reflection layer, cleaning and etched material layer is (In-situ) etch process when participating in the cintest.
According to a preferred embodiment of the present invention, above-mentioned cleaning uses an ionized gas to remove polymer.More preferably, this ionized gas has high relatively etch-rate for polymer, and for material layer low relatively etch-rate is arranged.
According to a preferred embodiment of the present invention, above-mentioned material layer is a polysilicon layer.If above-mentioned material layer is a polysilicon layer, then the employed ionized gas of cleaning preferably is selected from the gas that contains fluorine ion, oxonium ion and combination thereof.
According to a preferred embodiment of the present invention, above-mentioned bottom anti-reflection layer is an antireflecting inorganic layer or an organic antireflection layer.
So that the pattern of photoresist layer reaches littleizationr, can make the critical size that obtains after the etching by the polymer that produces after the removing etching again is the required live width of element design because of using a pre-shaping step in the present invention.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborates.
Description of drawings
Figure 1A to Fig. 1 E illustrate is the flow process generalized section of the etch process of one embodiment of the present invention.
The simple symbol explanation
100: substrate
102: material layer
102: patterned material layer
104: bottom anti-reflection layer
104a: patterning bottom anti-reflection layer
107: patterning photoresist layer
108,114: etching step
110: sedimentary deposit
112: cleaning
Embodiment
Figure 1A to Fig. 1 E illustrate is the flow process generalized section according to the etch process of one embodiment of the present invention.
At first, please refer to Figure 1A, be formed with material layer 102 in the substrate 100, and on material layer 102, formed bottom anti-reflection layer 104.
Wherein, material layer 102 for example is a polysilicon layer.
And bottom anti-reflection layer 104 can for example be antireflecting inorganic layer or organic antireflection layer.Wherein the generation type of antireflecting inorganic layer is a chemical vapour deposition technique, and its material can comprise amorphous phase carbon film, silicon nitride, silicon oxynitride and titanium oxide etc.
Then, please refer to Figure 1B, on bottom anti-reflection layer 104, form patterning photoresist layer 107.The formation method of this patterning photoresist layer 107 for example is to form the photoresist layer with method of spin coating on bottom anti-reflection layer 104, then, the photoresist layer is carried out photoetching process, can obtain patterning photoresist layer 107.Wherein the material of photoresist layer comprises by resin, solvent and photoresist and being formed.
Then, please refer to Fig. 1 C, is etching mask with patterning photoresist layer 107, carries out etching step 108, with etching bottom anti-reflection layer 104, and forms patterning bottom anti-reflection layer 104a.
Yet, by Fig. 1 C as can be known, bottom anti-reflection layer 104 is carried out in the process of etching step 108, on the surface of patterning photoresist layer 107, can produce the deposition of chemical polymerization thing, and in substrate 100, form a sedimentary deposit 110.And this sedimentary deposit 110 can influence the correctness that the photoresist layer pattern is transferred to pattern behind the material layer, and it is good to make the critical size of patterning photoresist layer 107 control, thereby causes dwindling live width.
Then, please refer to Fig. 1 D, carry out cleaning 112, to remove attached to patterning photoresist layer 107 lip-deep polymer.
In a preferred embodiment, above-mentioned cleaning 112 uses an ionized gas to remove polymer.And its employed ionized gas preferably has high relatively etch-rate for polymer, and for material layer 102 low relatively etch-rate is arranged, and so just can not produce material layer 102 and damage.
Particularly, if material layer 102 is a polysilicon layer, then employed ionized gas preferably is selected from the gas that contains fluorine ion, oxonium ion and combination thereof in the cleaning 112.
Then, please refer to Fig. 1 E, after cleaning 112, carry out an etching step 114 as etching mask,, and form patterned material layer 102a with patterned material layer 102 with patterning photoresist layer 107.
By the foregoing description as can be known, the present invention earlier removed polymer attached to patterning photoresist layer 107 surface by a cleaning before etched material layer 102.This step can be avoided the accuracy because of polymer deposition pattern after patterning photoresist layer 107 surface change design transfer, has influence on the size of critical size then.
In a preferred embodiment, in the step of Figure 1B, after forming patterning photoresist layer 107, also comprise the step of repairing (trim) patterning photoresist layer 107, so that more downsizing of critical size.And above-mentioned pre-shaping step for example is after forming patterning photoresist layer 107, utilizes plasma that patterning photoresist layer 107 is repaired, and makes its pattern with less live width, and makes more downsizing of critical size.In another preferred embodiment, above-mentioned pre-shaping step for example is after forming patterning photoresist layer 107, patterning photoresist layer 117 is carried out a solution treatment steps, utilize solution treatment steps etched pattern photoresist layer 107, so that it has the pattern of less live width, and help making more downsizing of critical size equally.
The present invention still has other and preferably implements kenel except above preferred embodiment.For example, in another preferred embodiment, can be after the step of above-mentioned Figure 1B, patterning photoresist layer 107 is carried out a pre-shaping step, and this pre-shaping step, can be (In-situ) etch process when participating in the cintest in the etching step 114 of the cleaning 112 of the etching step 108 of the etching bottom anti-reflection layer 104 of above-mentioned Fig. 1 C, Fig. 1 D and Fig. 1 E etched material layer 102.So-called when participating in the cintest that is be that each step in the technology is all in same reative cell (reaction chamber) or promptly be referred to as in same board.Therefore, above-mentioned pre-shaping step can be and utilizes plasma that patterning photoresist layer 107 is repaired, so that more downsizing of critical size, and can cooperate and makes other each step can be etch process when participating in the cintest.Above-mentioned etch process when participating in the cintest can make the etching step 108 of the etching bottom anti-reflection layer 104 of Fig. 1 C, the cleaning 112 of Fig. 1 D and the etching step 114 of Fig. 1 E etched material layer 102 carry out in same reative cell or in same board, it can simplify the required time of technology, and the damage that can avoid element to cause because of the carrying of needs between each board of technology.
By the foregoing description as can be known, the method that the present invention proposes is a finishing pattern photoresist layer, so that the line width patterns of patterning photoresist layer can more be dwindled.And after the etching bottom anti-reflection layer, add a cleaning to remove the polymer that produces because of the etching bottom anti-reflection layer, this step can help the pattern integrity after the photoresist layer pattern shifts and make more downsizing of critical size, therefore reaches the purpose of effective reduction live width.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (15)
1, a kind of etch process comprises:
One material layer is provided, and has been formed with a bottom anti-reflection layer and a patterning photoresist layer on this material layer;
With this patterning photoresist layer is etching mask, this bottom anti-reflection layer of etching;
Carry out a cleaning, to remove attached to the polymer on this patterning photoresist laminar surface; And
With this patterning photoresist layer is etching mask, this material layer of etching.
2, etch process as claimed in claim 1, wherein this cleaning uses an ionized gas to remove polymer.
3, etch process as claimed in claim 2, wherein this ionized gas has high relatively etch-rate for this polymer, and for this material layer low relatively etch-rate is arranged.
4, etch process as claimed in claim 1, wherein this material layer is a polysilicon layer.
5, etch process as claimed in claim 2, wherein the employed ionized gas of this cleaning is selected from the gas that contains fluorine ion, oxonium ion and combination thereof.
6, etch process as claimed in claim 1, wherein this bottom anti-reflection layer is an antireflecting inorganic layer.
7, etch process as claimed in claim 1, wherein this bottom anti-reflection layer is an organic antireflection layer.
8, etch process as claimed in claim 1 wherein after forming this patterning photoresist layer, also comprises this patterning photoresist layer of finishing.
9, a kind of Patternized technique comprises:
On a material layer, form a bottom anti-reflection layer and a photoresist layer;
Carry out a photoetching process, with this photoresist layer of patterning;
Repair this patterning photoresist layer;
With this patterning photoresist layer is etching mask, this bottom anti-reflection layer of etching;
Carry out a cleaning, to remove attached to the polymer on this patterning photoresist laminar surface; And
With this patterning photoresist layer is etching mask, this material layer of etching,
Wherein the step of the step of this bottom anti-reflection layer of etching, this cleaning and this material layer of etching is an etch process when participating in the cintest.
10, Patternized technique as claimed in claim 9, wherein this cleaning uses an ionized gas to remove polymer.
11, Patternized technique as claimed in claim 10, wherein this ionized gas has high relatively etch-rate for this polymer, and for this material layer low relatively etch-rate is arranged.
12, Patternized technique as claimed in claim 9, wherein this material layer is a polysilicon layer.
13, Patternized technique as claimed in claim 10, wherein the employed ionized gas of this cleaning is selected from the gas that contains fluorine ion, oxonium ion and combination thereof.
14, Patternized technique as claimed in claim 9, wherein this bottom anti-reflection layer is an antireflecting inorganic layer.
15, Patternized technique as claimed in claim 9, wherein this bottom anti-reflection layer is an organic antireflection layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410085084XA CN100361275C (en) | 2004-10-12 | 2004-10-12 | Etching method of preparation, and pattermizing method of preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410085084XA CN100361275C (en) | 2004-10-12 | 2004-10-12 | Etching method of preparation, and pattermizing method of preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1761035A CN1761035A (en) | 2006-04-19 |
| CN100361275C true CN100361275C (en) | 2008-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB200410085084XA Expired - Lifetime CN100361275C (en) | 2004-10-12 | 2004-10-12 | Etching method of preparation, and pattermizing method of preparation |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102091703B (en) * | 2009-12-15 | 2013-01-02 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning polymer on side wall of etching chamber and contact hole forming method |
| CN102298259A (en) * | 2010-06-22 | 2011-12-28 | 无锡华润上华半导体有限公司 | Photoetching method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263611A (en) * | 1998-04-08 | 2000-08-16 | 克拉瑞特国际有限公司 | Pattern forming method |
| US20030092281A1 (en) * | 2001-11-13 | 2003-05-15 | Chartered Semiconductors Manufactured Limited | Method for organic barc and photoresist trimming process |
| CN1431687A (en) * | 2002-01-07 | 2003-07-23 | 联华电子股份有限公司 | Method for removing photoresistive layer in mfg. process of inserting metals |
| US6645702B1 (en) * | 2000-05-01 | 2003-11-11 | Advanced Micro Devices, Inc. | Treat resist surface to prevent pattern collapse |
| CN1468977A (en) * | 2002-07-19 | 2004-01-21 | 联华电子股份有限公司 | Residual polymer eliminating method |
| WO2004051379A1 (en) * | 2002-12-03 | 2004-06-17 | Az Electronic Materials (Japan) K.K. | Rinse liquid for lithography and method for forming resist pattern using same |
| CN1531034A (en) * | 2003-03-12 | 2004-09-22 | 联华电子股份有限公司 | Etching process for shaping semiconductor embedded structure |
-
2004
- 2004-10-12 CN CNB200410085084XA patent/CN100361275C/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1263611A (en) * | 1998-04-08 | 2000-08-16 | 克拉瑞特国际有限公司 | Pattern forming method |
| US6645702B1 (en) * | 2000-05-01 | 2003-11-11 | Advanced Micro Devices, Inc. | Treat resist surface to prevent pattern collapse |
| US20030092281A1 (en) * | 2001-11-13 | 2003-05-15 | Chartered Semiconductors Manufactured Limited | Method for organic barc and photoresist trimming process |
| CN1431687A (en) * | 2002-01-07 | 2003-07-23 | 联华电子股份有限公司 | Method for removing photoresistive layer in mfg. process of inserting metals |
| CN1468977A (en) * | 2002-07-19 | 2004-01-21 | 联华电子股份有限公司 | Residual polymer eliminating method |
| WO2004051379A1 (en) * | 2002-12-03 | 2004-06-17 | Az Electronic Materials (Japan) K.K. | Rinse liquid for lithography and method for forming resist pattern using same |
| CN1531034A (en) * | 2003-03-12 | 2004-09-22 | 联华电子股份有限公司 | Etching process for shaping semiconductor embedded structure |
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| CN1761035A (en) | 2006-04-19 |
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