CN103424998A - Photoresist removing method after polyimides are photoetched in micro-electromechanical system manufacturing process - Google Patents
Photoresist removing method after polyimides are photoetched in micro-electromechanical system manufacturing process Download PDFInfo
- Publication number
- CN103424998A CN103424998A CN2012101598831A CN201210159883A CN103424998A CN 103424998 A CN103424998 A CN 103424998A CN 2012101598831 A CN2012101598831 A CN 2012101598831A CN 201210159883 A CN201210159883 A CN 201210159883A CN 103424998 A CN103424998 A CN 103424998A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- manufacturing process
- remove
- microelectromechanical
- polyimide etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
Abstract
The invention relates to a photoresist removing method after polyimides are photoetched in a micro-electromechanical system manufacturing process. The method comprises a step of pretreating the photoresist surface of a wafer by adopting a dry-method photoresist removing machine platform under a pin up state, wherein the photoresist surface is bombarded by using plasma; and a step of performing wet-method photoresist removing for the photoresist. According to the method, the photoresist surface is pretreated firstly in the Pin up state, and then wet-method photoresist removing is performed. A reaction is not drastic relatively in the Pin up state, so that the polyimides cannot be removed together with the photoresist. In addition, after pretreatment, the photoresist can be removed easily in the wet-method photoresist removing process, so that the photoresist can be removed completely, thereby providing good conditions for membrane growth of a product on the photoetched polyimides, guaranteeing product performances, reducing the rework rate of the photoresist removing process, and increasing productivity. Moreover, photoresist removing liquid is not required to be changed frequently anymore, thus improving the utilization rate of the positive photoresist removing liquid.
Description
Technical field
The present invention relates to semiconductor technology, particularly relate to a kind of remove photoresist in microelectromechanical-systems manufacturing process after the polyimide etching method.
Background technology
Often can use polyimide (Polyimide, PI) in microelectromechanical-systems (MEMS), for example in some MEMS products, can be used as insulation course.Polyimide need to shift to realize figure through over etching, but after etching, can make the character on photoresist surface change, become similar to the character of polyimide, therefore should not adopt the dry method degumming process to be removed photoresist, otherwise can when removing photoresist, remove polyimide.
In traditional handicraft, after the polyimide etching, usually adopt wet method to remove photoresist, but can have the unclean phenomenon of removing photoresist, be unfavorable for the growth of subsequent film and the assurance of properties of product, cause disk to be done over again, rework rate is increased, be unfavorable for normal production.
Summary of the invention
Based on this, be necessary for the unclean problem of removing photoresist in traditional handicraft, a kind of remove photoresist in microelectromechanical-systems manufacturing process after the polyimide etching method is provided.
Remove the method for photoresist in a kind of microelectromechanical-systems manufacturing process after the polyimide etching, comprise the following steps: to adopt the dry method board photoresist surface to disk under thimble jack-up state of removing photoresist to carry out pre-service, comprise with plasma described photoresist surface is bombarded; Described photoresist is carried out to wet method to remove photoresist.
In embodiment, described pre-treatment step is carried out after dry etch step therein.
Therein in embodiment, described wet method is removed photoresist after step and is comprised the step situation of removing photoresist checked with microscope.
Therein in embodiment, described wet method is removed photoresist in step and is adopted the positivity liquid that removes photoresist to be removed photoresist.
Therein in embodiment, the remove photoresist cavity temperature of board of dry method described in described pre-treatment step is 250 degrees centigrade.
In embodiment, the processing time of described pre-treatment step is 30 seconds therein.
In embodiment, the photoresist thickness that described pre-treatment step applying plasma bombardment is removed is therein
Remove the method for photoresist in above-mentioned microelectromechanical-systems manufacturing process after the polyimide etching, at first at thimble jack-up state, pre-service is carried out in the photoresist surface, then carry out wet method and remove photoresist.Because the severe degree of thimble jack-up state response is slightly many comparatively speaking, therefore be unlikely to cause polyimide together to be removed.After carrying out pre-service in addition, in wet method is removed photoresist operation, photoresist just is easy to be removed, and therefore removing photoresist can be very clean, film growth for product after the polyimide etching provides good condition, ensure the performance of product, and reduced the rework rate removed photoresist, promoted production capacity.And because the photoresist in operation that removes photoresist of wet method after pre-service is easy to remove, therefore no longer need frequently the liquid that removes photoresist to be changed to liquid, improved the remove photoresist utilization factor of liquid of positivity.
The accompanying drawing explanation
Fig. 1 removes the process flow diagram of the method for photoresist after the polyimide etching in one embodiment microelectromechanical-systems manufacturing process;
Fig. 2 removes the process flow diagram of the method for photoresist after the polyimide etching in another embodiment microelectromechanical-systems manufacturing process.
Embodiment
For purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 removes the process flow diagram of the method for photoresist after the polyimide etching in the microelectromechanical-systems manufacturing process of one embodiment, comprise the following steps:
S110, adopt the dry method board that removes photoresist, and under thimble jack-up (Pin up) state, pre-service carried out in the photoresist surface of disk (wafer).
Specifically at a certain temperature, and thimble will be bombarded the photoresist surface with plasma under the state of disk jack-up pre-treatment step.
S120, carry out wet method to photoresist and remove photoresist.
Therein in embodiment, adopt the positivity liquid that removes photoresist to be removed photoresist.
It is mainly comparatively obvious after dry etching due to the character on photoresist surface after etching, changing, and therefore in a preferred embodiment, step S110 carries out after dry etching polyimide step S108, referring to Fig. 2.
Therein in embodiment, in step S110, the remove photoresist cavity temperature of board of dry method can be set as 200 ~ 250 degrees centigrade, is preferably 250 degrees centigrade.The pretreated time is 25 ~ 35 seconds, is preferably 30 seconds.Within the pretreated time, disk heats up gradually, and final disk surfaces temperature can reach 170 degrees centigrade of left and right.The photoresist thickness that the bombardment of pre-service applying plasma is removed is
Left and right.
As shown in Figure 2, in another embodiment, after completing, step S120 can also comprise the step S130 situation of removing photoresist checked with microscope.According to check result, may need is done over again carries out secondary and removes photoresist, or the parameter of removing photoresist in set-up procedure S110 and S120 (such as the temperature of removing photoresist, time etc.).
Remove the method for photoresist in above-mentioned microelectromechanical-systems manufacturing process after the polyimide etching, at first at thimble jack-up state, pre-service is carried out in the photoresist surface, then carry out wet method and remove photoresist.During due to pre-service, thimble, in Pin up state, has been controlled temperature and the reaction time of cavity in addition, and the severe degree of reaction is slightly many comparatively speaking, therefore is unlikely to cause polyimide together to be removed.After carrying out pre-service in addition, in wet method is removed photoresist operation, photoresist just is easy to be removed, and therefore removing photoresist can be very clean, film growth for product after the polyimide etching provides good condition, ensure the performance of product, and reduced the rework rate removed photoresist, promoted production capacity.And because the photoresist in operation that removes photoresist of wet method after pre-service is easy to remove, therefore no longer need frequently the liquid that removes photoresist to be changed to liquid, improved the remove photoresist utilization factor of liquid of positivity.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (7)
1. remove the method for photoresist in a microelectromechanical-systems manufacturing process after the polyimide etching, comprise the following steps:
Adopt the dry method board photoresist surface to disk under thimble jack-up state of removing photoresist to carry out pre-service, comprise with plasma described photoresist surface is bombarded;
Described photoresist is carried out to wet method to remove photoresist.
2. remove the method for photoresist in microelectromechanical-systems manufacturing process according to claim 1 after the polyimide etching, it is characterized in that, described pre-treatment step is carried out after dry etch step.
3. remove the method for photoresist in microelectromechanical-systems manufacturing process according to claim 1 after the polyimide etching, it is characterized in that, described wet method is removed photoresist after step and is comprised the step situation of removing photoresist checked with microscope.
4. remove the method for photoresist in microelectromechanical-systems manufacturing process according to claim 1 after the polyimide etching, it is characterized in that, described wet method is removed photoresist in step and is adopted the positivity liquid that removes photoresist to be removed photoresist.
5. remove the method for photoresist in microelectromechanical-systems manufacturing process according to claim 1 after the polyimide etching, it is characterized in that, the remove photoresist cavity temperature of board of dry method described in described pre-treatment step is 250 degrees centigrade.
6. according to removing the method for photoresist after polyimide etching in the described microelectromechanical-systems manufacturing process of any one in claim 1-5, it is characterized in that, the processing time of described pre-treatment step is 30 seconds.
7. remove the method for photoresist in microelectromechanical-systems manufacturing process according to claim 6 after the polyimide etching, it is characterized in that, the photoresist thickness that described pre-treatment step applying plasma bombardment is removed is
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210159883.1A CN103424998B (en) | 2012-05-21 | 2012-05-21 | The method removing photoresist in microelectromechanical-systems manufacturing process after polyimides etching |
| PCT/CN2013/075374 WO2013174215A1 (en) | 2012-05-21 | 2013-05-09 | Photoresist stripping method after being etched by polyimide in manufacturing process of micromotor system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210159883.1A CN103424998B (en) | 2012-05-21 | 2012-05-21 | The method removing photoresist in microelectromechanical-systems manufacturing process after polyimides etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103424998A true CN103424998A (en) | 2013-12-04 |
| CN103424998B CN103424998B (en) | 2016-07-06 |
Family
ID=49623098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210159883.1A Active CN103424998B (en) | 2012-05-21 | 2012-05-21 | The method removing photoresist in microelectromechanical-systems manufacturing process after polyimides etching |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103424998B (en) |
| WO (1) | WO2013174215A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752155A (en) * | 2013-12-30 | 2015-07-01 | 美新半导体（无锡）有限公司 | Method for removing graph edge adhesive material and photoresist after IBE (ion beam etching) |
| CN108321085A (en) * | 2017-01-17 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of minimizing technology of polyimide layer and the production method of semiconductor devices |
| CN108346571A (en) * | 2018-02-06 | 2018-07-31 | 无锡元创华芯微机电有限公司 | A kind of method of dry etching polyimide sacrificial layer |
| CN111913372A (en) * | 2019-05-08 | 2020-11-10 | 上海新微技术研发中心有限公司 | Method for removing photoresist |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428823A (en) * | 2001-12-26 | 2003-07-09 | 旺宏电子股份有限公司 | Method for removing residual polymer from etched weld-padded window |
| CN1468977A (en) * | 2002-07-19 | 2004-01-21 | 联华电子股份有限公司 | Residual polymer eliminating method |
| US20040063595A1 (en) * | 2002-09-26 | 2004-04-01 | Park Dong-Jin | Composition for stripping photoresist and method of preparing the same |
| JP2006005181A (en) * | 2004-06-18 | 2006-01-05 | Matsushita Electric Ind Co Ltd | Ashing method |
| CN101126909A (en) * | 2006-08-15 | 2008-02-20 | 中芯国际集成电路制造(上海)有限公司 | Polymer residue removing method in semiconductor process posterior segment process |
| CN101308765A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Etching method of metal wire |
-
2012
- 2012-05-21 CN CN201210159883.1A patent/CN103424998B/en active Active
-
2013
- 2013-05-09 WO PCT/CN2013/075374 patent/WO2013174215A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428823A (en) * | 2001-12-26 | 2003-07-09 | 旺宏电子股份有限公司 | Method for removing residual polymer from etched weld-padded window |
| CN1468977A (en) * | 2002-07-19 | 2004-01-21 | 联华电子股份有限公司 | Residual polymer eliminating method |
| US20040063595A1 (en) * | 2002-09-26 | 2004-04-01 | Park Dong-Jin | Composition for stripping photoresist and method of preparing the same |
| JP2006005181A (en) * | 2004-06-18 | 2006-01-05 | Matsushita Electric Ind Co Ltd | Ashing method |
| CN101126909A (en) * | 2006-08-15 | 2008-02-20 | 中芯国际集成电路制造(上海)有限公司 | Polymer residue removing method in semiconductor process posterior segment process |
| CN101308765A (en) * | 2007-05-15 | 2008-11-19 | 中芯国际集成电路制造(上海)有限公司 | Etching method of metal wire |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752155A (en) * | 2013-12-30 | 2015-07-01 | 美新半导体（无锡）有限公司 | Method for removing graph edge adhesive material and photoresist after IBE (ion beam etching) |
| CN104752155B (en) * | 2013-12-30 | 2017-08-29 | 美新半导体（无锡）有限公司 | A kind of method of pattern edge bur and photoresist after removal IBE etchings |
| CN108321085A (en) * | 2017-01-17 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of minimizing technology of polyimide layer and the production method of semiconductor devices |
| CN108321085B (en) * | 2017-01-17 | 2021-04-23 | 中芯国际集成电路制造(上海)有限公司 | Method for removing polyimide layer and method for manufacturing semiconductor device |
| CN108346571A (en) * | 2018-02-06 | 2018-07-31 | 无锡元创华芯微机电有限公司 | A kind of method of dry etching polyimide sacrificial layer |
| CN111913372A (en) * | 2019-05-08 | 2020-11-10 | 上海新微技术研发中心有限公司 | Method for removing photoresist |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013174215A1 (en) | 2013-11-28 |
| CN103424998B (en) | 2016-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120289056A1 (en) | Selective silicon nitride etch | |
| CN103424998A (en) | Photoresist removing method after polyimides are photoetched in micro-electromechanical system manufacturing process | |
| WO2007094853A3 (en) | Method and system for selectively etching a dielectric material relative to silicon | |
| JP2013138248A5 (en) | ||
| CN103420329B (en) | For the TaN etch polymers residue removal method of MEMS technology | |
| KR20180071952A (en) | A PART FOR SEMICONDUCTOR MANUFACTORING WITH SiC DEPOSITION LAYER AND MANUFACTORING METHOD THE SAME | |
| CN104810245B (en) | Improve groove pattern method | |
| CN103576445A (en) | Photoetching method for photoresist as silicon groove etching mask | |
| TW201206578A (en) | Drying method for surface structure body | |
| CN104465330B (en) | Rectifier diode, chip and preparation method thereof | |
| US11664235B2 (en) | Photoresist removal | |
| CN105742178A (en) | Dry etching preparation method of T-shaped hole of integrated circuit | |
| CN103094182B (en) | Manufacturing method for semiconductor device | |
| CN106558486A (en) | The method for removing semiconductor chip mask layer | |
| JP2016046513A (en) | Method of manufacturing wafer | |
| CN103646854A (en) | Method for improving Cr mask based etching technology | |
| CN103681242B (en) | Silicon substrate thick metal etching pretreatment process | |
| CN103854962B (en) | Cleaning method after wafer etching | |
| EP3667706A3 (en) | Partially removing a semiconductor wafer | |
| CN108962921B (en) | Semiconductor device and method for manufacturing the same | |
| US20140158663A1 (en) | Surface treatment method for flexible substrate | |
| CN108022830B (en) | Method for manufacturing semiconductor device | |
| CN104269362A (en) | Manufacturing method for through silicon via metal column back face protruding blocks | |
| WO2016150287A1 (en) | Method and device for manufacturing semiconductor apparatus | |
| CN105843001B (en) | Method for removing photoetching coating of carbon-containing porous material substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171010 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |