CN105843001B - Method for removing photoetching coating of carbon-containing porous material substrate - Google Patents
Method for removing photoetching coating of carbon-containing porous material substrate Download PDFInfo
- Publication number
- CN105843001B CN105843001B CN201610181430.7A CN201610181430A CN105843001B CN 105843001 B CN105843001 B CN 105843001B CN 201610181430 A CN201610181430 A CN 201610181430A CN 105843001 B CN105843001 B CN 105843001B
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- Prior art keywords
- coating
- substrate
- organic solvent
- carbon
- porous material
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- 239000011248 coating agent Substances 0.000 title claims abstract description 41
- 238000000576 coating method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000001259 photo etching Methods 0.000 title claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 20
- 239000011148 porous material Substances 0.000 title claims abstract description 20
- 239000003960 organic solvent Substances 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- -1 oxygen ions Chemical class 0.000 claims description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 claims description 3
- 239000012046 mixed solvent Substances 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Weting (AREA)
Abstract
The invention relates to a method for removing a photoetching coating for a carbon-containing porous material substrate, which combines the removal of an organic solvent with the removal of a low-temperature oxidation process, adopts the organic solvent to remove the photoetching coating which is easily dissolved in the organic solvent on the surface of the substrate and in a deep hole firstly, and adopts the low-temperature oxidation process to remove the photoetching coating remained in the deep hole; the defects of incomplete removal of the organic solvent, slow removal speed of the low-temperature oxidation process and poor capacity are effectively overcome; the method has the advantages that the removal capacity of the photoetching coating is increased while the carbon-containing porous material substrate is not damaged, the photoetching coating is completely removed, the structural performance and the electrical performance of the porous structure of the carbon-containing porous material substrate are ensured, and convenience is brought to subsequent process treatment.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for removing a photoetching coating of a carbon-containing porous material substrate.
Background
In integrated circuit fabrication processes, the most common method for removal of the photolithographic coating is a high temperature ashing process, typically using an oxidation treatment at a temperature above 250 ℃. However, when the substrate is a carbon-containing porous material, such as a low-k material, the high-temperature oxidation process may cause great damage to the substrate while removing the photoresist coating.
Disclosure of Invention
The present invention aims to provide a method for removing a photolithographic coating on a substrate made of a carbon-containing porous material, which solves the above problems in the prior art.
The technical scheme for solving the technical problems is as follows:
a method for removing a photolithographic coating on a carbon-containing porous material substrate, comprising the steps of:
step 1, removing the photoetching coating on the surface of a substrate and in a deep hole by adopting an organic solvent;
step 2, further removing the residual photoetching coating in the deep hole by adopting a low-temperature oxidation process;
wherein the photoresist coating comprises a photoresist coating and an anti-reflective coating.
The invention has the beneficial effects that: the organic solvent removal and the low-temperature oxidation process removal are combined, the organic solvent is adopted to remove the photoetching coating which is easier to dissolve in the organic solvent on the surface of the substrate and in the deep hole, and the low-temperature oxidation process is adopted to remove the photoetching coating which is remained in the deep hole; the defects of incomplete removal of the organic solvent, slow removal speed of the low-temperature oxidation process and poor capacity are effectively overcome; the method has the advantages that the removal capacity of the photoetching coating is increased while the carbon-containing porous material substrate is not damaged, the photoetching coating is completely removed, the structural performance and the electrical performance of the porous structure of the carbon-containing porous material substrate are ensured, and convenience is brought to subsequent process treatment.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, the step 1 is specifically realized by spraying an organic solvent onto the surface of the substrate at room temperature, uniformly covering the organic solvent on the surface of the substrate by rotating the substrate, and after the photolithographic coating on the surface of the substrate and in the deep hole is dissolved in the organic solvent, throwing off the organic solvent by rotating the substrate at a high speed.
Further, the organic solvent is a mixed solvent of PGME and PGMEA mixed in a preset ratio.
Further, the preset ratio is 3:2, 7:3 or 4: 1.
Further, the step 2 is specifically realized by charging oxygen into the machine table under a low temperature condition, forming plasma by high-energy ionization, ionizing high-concentration oxygen ions, carrying out oxidation reaction on the oxygen ions and the residual photoetching coating in the deep hole to generate carbon dioxide and water, and then pumping out the carbon dioxide and the water by an air pump.
Further, the temperature adopted by the low-temperature condition is not more than 100 ℃.
The further scheme has the beneficial effect that the substrate made of the carbon-containing porous material is prevented from being damaged due to overhigh temperature.
Further, the temperature adopted by the low temperature condition is 50 ℃.
The further scheme has the advantages of low temperature, low oxidation speed and weak capacity; the temperature is high, the carbon-containing porous material substrate is easily damaged by high-energy oxygen ions, and the oxidation speed, the oxidation capacity and the damage to the carbon-containing porous material substrate can be effectively considered at 50 ℃.
Drawings
FIG. 1 is a flow chart of a method of removing a photolithographic coating on a substrate made of a carbon-containing porous material according to the present invention.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, a method for removing a photolithographic coating of a carbon-containing porous material substrate comprises the following steps:
step 1, removing the photoetching coating on the surface of a substrate and in a deep hole by adopting an organic solvent; the photolithographic coating includes a photoresist coating and an antireflective coating.
The step 1 is specifically realized by spraying an organic solvent onto the surface of the substrate at room temperature, uniformly covering the organic solvent on the surface of the substrate by rotating the substrate, and throwing off the organic solvent by rotating the substrate at a high speed after the photoetching coating on the surface of the substrate and in the deep hole is dissolved in the organic solvent.
The organic solvent is a mixed solvent of PGME and PGMEA according to a preset proportion. The preset ratio is 3:2, 7:3 or 4: 1.
And 2, further removing the residual photoetching coating in the deep hole by adopting a low-temperature oxidation process.
And the step 2 is specifically realized by charging oxygen into the machine table under a low temperature condition, forming plasma by adopting high-energy ionization, ionizing high-concentration oxygen ions, carrying out oxidation reaction on the oxygen ions and the residual photoetching coating in the deep hole to generate carbon dioxide and water, and then pumping out the carbon dioxide and the water by using an air pump.
The cryogenic conditions are applied at a temperature of no more than 100 c, typically selected between room temperature and 60 c, such as 50 c.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (4)
1. A method for removing a photolithographic coating on a carbon-containing porous material substrate, comprising the following steps:
step 1, removing the photoetching coating on the surface of a substrate and in a deep hole by adopting an organic solvent;
step 2, further removing the residual photoetching coating in the deep hole by adopting a low-temperature oxidation process;
the photoetching coating comprises a photoresist coating and an anti-reflection coating, the organic solvent is a mixed solvent formed by mixing PGME and PGMEA according to a preset ratio, the preset ratio is 3:2, 7:3 or 4:1, and the adopted temperature under the low-temperature condition is not more than 100 ℃.
2. The method for removing the photolithographic coating on the carbon-containing porous material substrate according to claim 1, wherein the step 1 is realized by spraying an organic solvent onto the surface of the substrate at room temperature, uniformly covering the organic solvent on the surface of the substrate by rotating the substrate, and after the photolithographic coating on the surface of the substrate and in the deep hole is dissolved in the organic solvent, removing the organic solvent by rotating the substrate at high speed.
3. The method for removing the photolithographic coating on the carbon-containing porous material substrate according to claim 1, wherein the step 2 is realized by charging oxygen into a machine under a low temperature condition, ionizing to form plasma by adopting high-energy ionization, ionizing to obtain high-concentration oxygen ions, carrying out oxidation reaction on the oxygen ions and the photolithographic coating remained in the deep hole to generate carbon dioxide and water, and pumping out the carbon dioxide and the water by using an air pump.
4. The method for removing the photolithographic coating of the carbon-containing porous material substrate as claimed in claim 3, wherein the low temperature condition is at a temperature of 50 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610181430.7A CN105843001B (en) | 2016-03-28 | 2016-03-28 | Method for removing photoetching coating of carbon-containing porous material substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610181430.7A CN105843001B (en) | 2016-03-28 | 2016-03-28 | Method for removing photoetching coating of carbon-containing porous material substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105843001A CN105843001A (en) | 2016-08-10 |
| CN105843001B true CN105843001B (en) | 2020-03-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610181430.7A Active CN105843001B (en) | 2016-03-28 | 2016-03-28 | Method for removing photoetching coating of carbon-containing porous material substrate |
Country Status (1)
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| CN (1) | CN105843001B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1816773A (en) * | 2003-06-17 | 2006-08-09 | 兰姆研究公司 | Methods of etching photoresist on substrates |
| WO2006093770B1 (en) * | 2005-02-25 | 2006-12-07 | Ekc Technology Inc | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
| EP2474862A1 (en) * | 2009-09-02 | 2012-07-11 | Wako Pure Chemical Industries, Ltd. | Resist remover composition and method for removing resist using the composition |
-
2016
- 2016-03-28 CN CN201610181430.7A patent/CN105843001B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1816773A (en) * | 2003-06-17 | 2006-08-09 | 兰姆研究公司 | Methods of etching photoresist on substrates |
| WO2006093770B1 (en) * | 2005-02-25 | 2006-12-07 | Ekc Technology Inc | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material |
| CN101281379A (en) * | 2007-04-03 | 2008-10-08 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist as well as method for reworking of photoetching technology |
| EP2474862A1 (en) * | 2009-09-02 | 2012-07-11 | Wako Pure Chemical Industries, Ltd. | Resist remover composition and method for removing resist using the composition |
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| Publication number | Publication date |
|---|---|
| CN105843001A (en) | 2016-08-10 |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |