CN102157357A - Method for cleaning semiconductor silicon wafer - Google Patents
Method for cleaning semiconductor silicon wafer Download PDFInfo
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- CN102157357A CN102157357A CN2011100645987A CN201110064598A CN102157357A CN 102157357 A CN102157357 A CN 102157357A CN 2011100645987 A CN2011100645987 A CN 2011100645987A CN 201110064598 A CN201110064598 A CN 201110064598A CN 102157357 A CN102157357 A CN 102157357A
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Abstract
The invention discloses a method for cleaning a semiconductor silicon wafer. The method comprises the following steps: providing the semiconductor silicon wafer, wherein an antireflecting layer and a graphical photoresist layer are formed on the semiconductor silicon wafer in sequence; and using supercritical fluid to which a cosolvent is added to dissolve the antireflecting layer so as to separate the graphical photoresist layer from the semiconductor silicon wafer. The method has the following beneficial effects: photoresist layer residues possibly caused by directly using a cleaning solvent to dissolve the photoresist layer are avoided, and adjustment of the components of the cleaning solvent according to different photoresist and processes is simultaneously avoided, thus greatly simplifying the cleaning process steps. In addition, the cleaning effect can be obviously improved by ensuring the photoresist layer to break away from the semiconductor silicon wafer by dissolving the antireflecting layer.
Description
Technical field
The present invention relates to the integrated circuit processing technique field, relate in particular to a kind of cleaning method of semi-conductor silicon chip.
Background technology
Follow the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor device is just becoming, and therefore, it is more and more important that the material unaccounted-for (MUF) that cleaning is brought also becomes.In state-of-the-art technology, clean the material unaccounted-for (MUF) that is allowed each time and closely reached a very small quantity, this is a sizable challenge for cleaning.At this wherein, because heavy dose of ion implantation technology, can form the carbon-coating of a dehydrogenation, amorphous on the photoresist surface, therefore for the peeling off of the photoresist layer after injecting through the excess dosage ion, acid test especially.
At present, the technology of removing photoresist of industry-wide adoption is carried out ashing for utilizing oxygen plasma earlier to photoresist, and then removes surface residues by the mode of wet-cleaned.This method can have more consumption to backing material in preceding road technology, in the manufacturing of road, back metal interconnecting wires, can cause damage to novel low dielectric coefficient medium layer, and the dielectric constant of dielectric layer is improved, and influences properties of product and reliability.Simultaneously, this method also will consume a large amount of water, and produce a lot of virulent discarded objects.
Supercritical fluid mainly is a supercritical carbon dioxide, is thought most promising silicon chip cleaning technique of future generation by industry at present.Supercritical carbon dioxide has high density, low viscosity, and high diffusibility, advantages such as high-dissolvability can overcome capillary effect, can effectively clean diameter is little, depth-to-width ratio is big through hole or raceway groove.Result of study shows, cooperates suitable cosolvent or additive, and supercritical carbon dioxide can directly be removed through the photoresist after ion injection or the etch step, and does not damage backing material fully.Simultaneously, whole cleaning process is consume water not substantially, and carbon dioxide itself is nontoxic, not flammable, can reclaim after the use to reuse, and the discarded object that is produced is less than existing technology far away.
But, because the difference of technology, photoresist of a great variety, composition separately has a great difference, and through after the different PROCESS FOR TREATMENT, composition is complicated and changeable especially.Existing supercritical fluid cleaning technique mainly destroys the macromolecular chain of photoresist by the supercritical fluid that adds cosolvent, photoresist can be dissolved in the cleaning solvent, to reach the purpose of removing photoresist.This method will cause for different photoresists or different processing steps, must use different cleaning solvents to clean, promptly must regulate the composition of cleaning solvent according to different photoresists or different processing steps, will increase process complexity, even can occur finally can not reaching the purpose of removing photoresist fully owing to unreasonable the causing of composition of regulating cleaning solvent can't be dissolved photoresist fully.
Summary of the invention
The object of the present invention is to provide a kind of cleaning method of semi-conductor silicon chip, to solve the problem of the process complexity increase that causes when existing cleaning solvent cleans at photoresist.
For addressing the above problem, the present invention proposes a kind of cleaning method of semi-conductor silicon chip, and this method comprises the steps: to provide semi-conductor silicon chip, is formed with anti-reflecting layer and patterned photoresist layer on the described semi-conductor silicon chip successively; The supercritical fluid that cosolvent has been added in use dissolves described anti-reflecting layer, and described patterned photoresist layer is separated with described semi-conductor silicon chip.
Optionally, the described temperature value that has added the supercritical fluid of cosolvent is 32 ℃～50 ℃, and described pressure values of having added the supercritical fluid of cosolvent is 80 atmospheric pressure～100 atmospheric pressure.
Optionally, described cosolvent is propyl alcohol, propyl alcohol acetic acid esters or its combination.
Optionally, described supercritical fluid is a supercritical carbon dioxide.
Optionally, the thickness of described anti-reflecting layer is 30 nanometers～100 nanometers.
Optionally, the material of described anti-reflecting layer is the organic derivative that comprises carboxyl.
Optionally, before the supercritical fluid that cosolvent has been added in use dissolves the step of described anti-reflecting layer, be described anti-reflecting layer of mask etching and described semi-conductor silicon chip with patterned photoresist layer.
Optionally, the thickness of described patterned photoresist layer is 100 nanometers～5000 nanometers.
Compared with prior art, the supercritical fluid that cosolvent has been added in the cleaning method utilization of semi-conductor silicon chip provided by the invention dissolves anti-reflecting layer, the photoresist layer that covers on the anti-reflecting layer is broken away from from semi-conductor silicon chip owing to the dissolving of anti-reflecting layer, be that the surface of photoresist layer and semi-conductor silicon chip loses physical connection and is pulled away, described cleaning method has been avoided directly the remnants of the photoresist layer that may cause with cleaning solvent dissolving photoresist layer, simultaneously also avoided to regulate according to different photoresists and technology the composition of cleaning solvent, simplified the processing step that cleans greatly, in addition, the dissolving by anti-reflecting layer makes photoresist layer can significantly strengthen cleaning performance from the semi-conductor silicon chip disengaging.
Description of drawings
The cleaning method flow chart of steps of the semi-conductor silicon chip that Fig. 1 provides for the embodiment of the invention;
The cross-sectional view of the device of each step correspondence in the cleaning method of the semi-conductor silicon chip that Fig. 2 A to Fig. 2 D provides for the embodiment of the invention.
Embodiment
Be described in further detail below in conjunction with the cleaning method of the drawings and specific embodiments the semi-conductor silicon chip of the present invention's proposition.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only be used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, a kind of cleaning method of semi-conductor silicon chip is provided, the supercritical fluid that cosolvent has been added in this method utilization dissolves anti-reflecting layer, the photoresist layer that covers on the anti-reflecting layer is broken away from from semi-conductor silicon chip owing to the dissolving of anti-reflecting layer, be that the surface of photoresist layer and semi-conductor silicon chip loses physical connection and is pulled away, described cleaning method has been avoided directly the remnants of the photoresist layer that may cause with cleaning solvent dissolving photoresist layer, simultaneously also avoided to regulate according to different photoresists and technology the composition of cleaning solvent, simplified the processing step that cleans greatly, in addition, the dissolving by anti-reflecting layer makes patterned photoresist layer can significantly strengthen cleaning performance from the semi-conductor silicon chip disengaging.
Please refer to Fig. 1, the cleaning method flow chart of steps of the semi-conductor silicon chip that it provides for the embodiment of the invention, in conjunction with this Fig. 1, this method may further comprise the steps:
Step S101 provides semi-conductor silicon chip, is formed with anti-reflecting layer and patterned photoresist layer on the described semi-conductor silicon chip successively;
Step S102 uses the supercritical fluid that has added cosolvent to dissolve described anti-reflecting layer, and described patterned photoresist layer is separated with described semi-conductor silicon chip.
Be described in more detail below in conjunction with the cleaning method of generalized section semi-conductor silicon chip of the present invention, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.
Shown in Fig. 2 A, and integrating step S101, at first, provide semi-conductor silicon chip 200.Described semi-conductor silicon chip 200 can be the substrate (part that comprises integrated circuit and other elements) of multi layer substrate (silicon substrate that for example, has covering dielectric and metal film), classification substrate, silicon-on-insulator substrate (SOI), epitaxial silicon substrate, section processes.
Then, on described semi-conductor silicon chip 200, form anti-reflecting layer 201 and photoresist layer 202 successively.Wherein, anti-reflecting layer 201 can reduce the light reflection in the photoetching process.In the present embodiment, the material of anti-reflecting layer 201 is the organic derivatives that comprise carboxyl, will be understood by those skilled in the art that, the material of anti-reflecting layer 201 not only is confined to comprise the organic derivative of carboxyl, can also be other organic materials that can reduce light reflection in the photoetching process, the thickness of described anti-reflecting layer 201 be 30 nanometers～100 nanometers.
Shown in Fig. 2 B, integrating step S101, particularly, described photoresist layer 202 is realized graphical by photoetching and developing technique, form patterned photoresist layer 202 '.In the present embodiment, the thickness of described patterned photoresist layer 202 ' is 100 nanometers～5000 nanometers.
Shown in Fig. 2 C, then, be mask with patterned photoresist layer 202 ', adopt the described anti-reflecting layer 201 of mode etching and the described semi-conductor silicon chip 200 of dry etching.Certainly, the mode of etching not only is limited as dry etching, can also be wet etching.
Shown in Fig. 2 D, and integrating step S102, subsequently, use the supercritical fluid that has added cosolvent to dissolve described anti-reflecting layer 201, described patterned photoresist layer 202 ' is separated with described semi-conductor silicon chip 200.
The described temperature value that has added the supercritical fluid of cosolvent is 32 ℃～50 ℃, pressure values is 80 atmospheric pressure～100 atmospheric pressure, in the present embodiment, the described temperature value that has added the supercritical fluid of cosolvent is 40 ℃, and described pressure values of having added the supercritical fluid of cosolvent is 90 atmospheric pressure.By the interpolation under this condition the supercritical fluid of cosolvent semi-conductor silicon chip is cleaned, make described anti-reflecting layer 201 be dissolved in supercritical fluid, the patterned photoresist layer 202 ' that covers on the anti-reflecting layer 201 is broken away from from semi-conductor silicon chip 200 owing to the dissolving of anti-reflecting layer 201, this surface that makes patterned photoresist layer 202 ' and semi-conductor silicon chip 200 loses physical connection and the cleaning way that is pulled away, can significantly strengthen cleaning performance.
Optionally, described cosolvent is propyl alcohol, propyl alcohol acetic acid esters or its combination, and in the present embodiment, what described cosolvent adopted is the mixed solution of propyl alcohol and propyl alcohol acetic acid esters, and described supercritical fluid is a supercritical carbon dioxide.The mixed solution of propyl alcohol and propyl alcohol acetic acid esters is inserted in the supercritical carbon dioxide, and formation can be dissolved the cleaning solvent of anti-reflecting layer 201.
Will be understood by those skilled in the art that described cosolvent and described supercritical fluid not only are confined to mentioned component, can also be other compositions that can dissolve described anti-reflecting layer 201.
In sum, the invention provides a kind of cleaning method of semi-conductor silicon chip, the supercritical fluid that cosolvent has been added in this method utilization dissolves anti-reflecting layer 201, the patterned photoresist layer 202 ' that covers on the anti-reflecting layer 201 is broken away from from semi-conductor silicon chip 200 owing to the dissolving of anti-reflecting layer 201, described cleaning method has been avoided directly the remnants of the photoresist layer that may cause with cleaning solvent dissolving photoresist layer, simultaneously also avoided to regulate according to different photoresists and technology the composition of cleaning solvent, simplified the processing step that cleans greatly, in addition, dissolving by anti-reflecting layer 201 makes patterned photoresist layer 202 ' break away from from semi-conductor silicon chip 200, can significantly strengthen cleaning performance.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. the cleaning method of a semi-conductor silicon chip is characterized in that, comprising:
Semi-conductor silicon chip is provided, is formed with anti-reflecting layer and patterned photoresist layer on the described semi-conductor silicon chip successively;
The supercritical fluid that cosolvent has been added in use dissolves described anti-reflecting layer, and described patterned photoresist layer is separated with described semi-conductor silicon chip.
2. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, the described temperature value that has added the supercritical fluid of cosolvent is 32 ℃～50 ℃.
3. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, described pressure values of having added the supercritical fluid of cosolvent is 80 atmospheric pressure～100 atmospheric pressure.
4. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, described cosolvent is propyl alcohol, propyl alcohol acetic acid esters or its combination.
5. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, described supercritical fluid is a supercritical carbon dioxide.
6. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, the thickness of described anti-reflecting layer is 30 nanometers～100 nanometers.
7. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, the material of described anti-reflecting layer is the organic derivative that comprises carboxyl.
8. the cleaning method of semi-conductor silicon chip as claimed in claim 1, it is characterized in that, before the supercritical fluid that cosolvent has been added in use dissolves the step of described anti-reflecting layer, be described anti-reflecting layer of mask etching and described semi-conductor silicon chip with patterned photoresist layer.
9. the cleaning method of semi-conductor silicon chip as claimed in claim 1 is characterized in that, the thickness of described patterned photoresist layer is 100 nanometers～5000 nanometers.
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Cited By (5)
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| US9982664B2 (en) | 2015-07-31 | 2018-05-29 | Tel Fsi, Inc. | Systems and methods for metering a dose volume of fluid used to treat microelectronic substrates |
| CN109387232A (en) * | 2017-08-02 | 2019-02-26 | 约翰内斯·海德汉博士有限公司 | Scanning board for optical location device |
| CN110299290A (en) * | 2018-03-22 | 2019-10-01 | 中山大学 | The joint method and separation method of element |
| CN110308624A (en) * | 2019-05-17 | 2019-10-08 | 华中科技大学 | A kind of laser lithography three-dimensional micro-nano device supercritical fluid developing apparatus and method |
| CN110783172A (en) * | 2019-09-09 | 2020-02-11 | 长江存储科技有限责任公司 | Hybrid solvent and method for separating multiple dies in stacked package structure |
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| CN101567312A (en) * | 2008-04-22 | 2009-10-28 | 上海华虹Nec电子有限公司 | Method for producing ONO structure |
| CN101645415A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Method for manufacturing metal connecting line |
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| CN1894050A (en) * | 2003-05-06 | 2007-01-10 | 高级技术材料公司 | Supercritical fluid-based cleaning compositions and methods |
| CN1934221A (en) * | 2004-03-24 | 2007-03-21 | 高级技术材料公司 | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| CN101567312A (en) * | 2008-04-22 | 2009-10-28 | 上海华虹Nec电子有限公司 | Method for producing ONO structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9982664B2 (en) | 2015-07-31 | 2018-05-29 | Tel Fsi, Inc. | Systems and methods for metering a dose volume of fluid used to treat microelectronic substrates |
| CN109387232A (en) * | 2017-08-02 | 2019-02-26 | 约翰内斯·海德汉博士有限公司 | Scanning board for optical location device |
| CN110299290A (en) * | 2018-03-22 | 2019-10-01 | 中山大学 | The joint method and separation method of element |
| CN110299290B (en) * | 2018-03-22 | 2021-02-05 | 中山大学 | Method for bonding and separating elements |
| CN110308624A (en) * | 2019-05-17 | 2019-10-08 | 华中科技大学 | A kind of laser lithography three-dimensional micro-nano device supercritical fluid developing apparatus and method |
| CN110308624B (en) * | 2019-05-17 | 2020-10-30 | 华中科技大学 | Supercritical fluid developing device and method for laser lithography three-dimensional micro-nano device |
| CN110783172A (en) * | 2019-09-09 | 2020-02-11 | 长江存储科技有限责任公司 | Hybrid solvent and method for separating multiple dies in stacked package structure |
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| CN102157357B (en) | 2016-04-06 |
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