CN1457547A - 正交耦合可控振荡器和通信设备 - Google Patents

正交耦合可控振荡器和通信设备 Download PDF

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CN1457547A
CN1457547A CN02800245A CN02800245A CN1457547A CN 1457547 A CN1457547 A CN 1457547A CN 02800245 A CN02800245 A CN 02800245A CN 02800245 A CN02800245 A CN 02800245A CN 1457547 A CN1457547 A CN 1457547A
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oscillator
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D·M·W·利奈茨
E·C·迪克曼斯
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B27/00—Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1221—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising multiple amplification stages connected in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0315—Ring oscillators
    • H03K3/0322—Ring oscillators with differential cells

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Abstract

一种正交耦合可控振荡器，包括第一与第二电路模块，每个电路模块(100与100’)包括无稳态多谐振荡器电路(103)，第一电路模块(100)与第二电路模块(100’)耦合，而第二电路模块(100’)与第一电路模块(100)交叉耦合，每个电路模块(100’)包括第一与第二压控电流源(101)(VCCS)。在每个电路模块(100与100’)中，每个VCCS与移相器(102)耦合，此移相器用于移动利用VCCS(101)提供给那个电路模块中包括的谐振器(104)的电流(110)的相位。一种通信设备(300)，用于通过双向通信信道(304)通信，包括如前面权利要求(QVCO)之一所述的用于生成周期信号的振荡器(303)、用于从此周期信号和从信道(304)接收的接收信号中生成输出信号的接收模块(301)并且还包括发射模块(302)，用于从此周期信号和输入信号中生成发射信号，以便发射给此信道。

Description

正交耦合可控振荡器和通信设备
本发明涉及包括第一与第二相同的电路模块的正交耦合可控振荡器，这两个电路模块均包括无稳态多谐振荡器电路，第一电路模块与第二电路模块耦合，而第二电路模块与第一电路模块交叉耦合，此振荡器在每个电路模块中包括第一与第二压控电流源(VCCS)。
本发明还涉及通信设备。
正交耦合可控振荡器是在如天线局域网、光纤网络、移动电话、收发信机和许多其他的应用中非常有用的器件。
这些振荡器得满足的主要要求是低相位噪声和大的调谐范围，这些要求影响能具有明确确定低相位噪声和大调谐范围的高品质因数Q的正交环路LC振荡器的使用。
正交环路LC振荡器使用为获得正交输出振荡而耦合的两个相同的振荡器单元，这些振荡器单元是具有电感器作为其负载的无稳态多谐振荡器。有源设备，例如场效应晶体管出现在其输出端上的负电阻克服电感器中的损耗，因此振荡是自我保持的。
这样的正交环路LC振荡器公开在文件SP24.6中：A900MHz CMOSLC--1996年的ISSCC、Session 24的第392-393页上所述的具有正交输出的振荡器。
在此公知设备中，两个LC振荡器单元利用场效应晶体管(FET)进行耦合，电感器和寄生FET栅极与漏极电容器形成等效的LC单元，利用电感器电感和FET栅极与漏极结电容来确定振荡频率。等效LC单元中的总电流是无稳态多谐振荡器晶体管的漏极电流与通过耦合FET的漏极电流之和。这两个电流相互相移90度。在此应指出：利用如FET漏极与栅极电容的工艺相关参数来确定振荡频率，并且直接结果是振荡频率也是工艺相关的。而且，因为电流中90度相移，这些振荡器单元之间的耦合系数相当低，并且在某些条件下，振荡不能正交同步。因为分布的电感器和漏极与栅极电容器实现谐振电路不可能具有高的品质因数，所以相位噪声仍然相当高。
因此，本发明的一个目的是提供一种正交耦合可控振荡器，具有增加的耦合系数，并且与工艺无关地确定其振荡频率。
根据本发明，此目的利用前言段落中所述的器件来实现，此器件的特征在于，每个电路模块具有用于确定此模块中具有的无稳态多谐振荡器电路的振荡频率的谐振器，并且在每个电路模块中每个VCCS与用于移动由VCCS提供给那个电路模块中具有的谐振器的电流的相位的相应相移器耦合。
移相器在利用VCCS产生的电流中引入相移，以致通过VCCS的电流和通过无稳态电路的有源器件的电流基本上同相，提供通过谐振器的最大电流，直接结果是这两个电路模块之间的耦合系数增加，获得较好的振荡稳定性。
在优选实施例中，这些谐振器是LC谐振器并确定振荡器的振荡频率，其L与C元件具有的其电感与电容比此电路中的任何其他寄生电感与电容大得多，并且结果是，与工艺无关地确定振荡频率。谐振器在其谐振频率上提供低阻抗，因此必须给这些谐振器提供必需的电流来保持稳定的振荡频率。这些移相器和VCCS实现此目标。这些谐振器能是任何类型的LC谐振器，其特征为通过这些谐振器的电流在振荡频率上保持其最大值。直接结果是谐振器实现为电感器与电容器(振荡回路)、两个互感耦合的振荡回路或如同谐振器动作的电感与电容性元件的任何其他组合之间的并行连接，其中谐振器的特征为通过它的电流在谐振频率上是最大的。
根据谐振元件的类型，例如能电子地、机械地、热地、光学地以各种模式来控制振荡频率。
根据本发明的振荡器具有较低的相位噪声的优点，并且结果是增加总的信噪比。
示意地，利用晶体管和LC振荡谐振器来实现所有前面描述的级。在一个实施例中，所有这些晶体管利用CMOS技术来实施。
本发明的另一目的是提供一种通信设备，用于通过双向通信信道进行通信，包括如权利要求1所述的用于生成周期信号的振荡器、用于从周期信号和从信道接收的接收信号(IN)中生成输出信号(OUT1)的接收模块并且还包括用于从周期信号和输入信号(IN1)中生成发射信号(OUT)以便发送给信道的发射模块。
如权利要求6所述的设备的特征在于，振荡器构想为提供在接收模块中与输入信号(IN)混频的周期信号以获得较低频率信号(OUT1)。
如权利要求6所述的设备的特征在于，振荡器构想为提供在发射模块中与输入信号(IN1)混频的周期信号以获得此信号(OUT)。
本发明的上面与其它特性和优点从下面结合附图的本发明的示例性实施例的描述中将变得显而易见。
图1描述正交耦合可控振荡器的方框图；
图2描述根据本发明如图1所示的振荡器模块的方框图；
图3描述根据本发明的一个实施例的振荡器的CMOS实施；
图4描述谐振器的一个实施例；
图5描述用于通过双向通信信道通信的通信设备。
图1表示根据本发明的正交耦合可控振荡器(振荡器)的方框图，提供两个相同的电路模块100与100′。这两个电路模块均分别具有两个输入端Ip1、In1和Ip2、In2以及分别具有两个输出端Op1、On1和Op2、On2。电路模块100直接耦合到电路模块100′，输出端Op1连接到输入端Ip2，并且输出端On1连接到输入端In2。电路模块100′交叉连接到电路模块100，分别地，输出端Op2连接到输入端In1，并且输出端On2连接到输入端Ip1。
图2表示电路模块100的实施例。电路模块100′具有与电路模块100相同的结构，其差别在于分别具有两个输入端Ip2、In2和输出端Op2、On2来替代端子In1、Ip1和On1、Op1。
电路模块100包括压控电流源(VCCS)100，这些电流源在其输出端上提供分别利用输入电压Ip1和In1预先模块化的电流。VCCS与移相器102耦合，移相器102移动VCCS的输出电流的相位，在其输出端上提供相移的电流110。移相器102与无稳态多谐振荡器电路103耦合，此无稳态多谐振荡器电路装载有谐振器电路104，其特征在于，在获得其谐振频率时，必须给它提供最大的电流，谐振器阻抗具有其最小值。通过谐振器104的电流12是以下两个电流之和：通过无稳态多谐振荡器电路103的有源器件105的电流和利用移相器102提供的VCCS101的相移电流110。在无稳态多谐振荡器电路103利用谐振器104的谐振频率振荡时，必须给此谐振器提供大电流，否则频移出现并且电路模块100与100′中的两个相同的无稳态多谐振荡器电路103不能正交耦合。在此条件下，此谐振器如同具有大相位噪声电平的低Q电路动作。为了避免上述情况，利用移相器102提供的相移电流110和通过无稳态多谐振荡器103的有源器件105的电流111相移非常小的相角，因此可以认为它们同相。在这些情况下，提供给谐振器104的电流112尽可能大。因此，无稳态多谐振荡器电路103利用谐振器104的频率振荡，所以改善相位噪声，并且正交耦合两个相同的无稳态多谐振荡器电路。这两个相同的电路模块100与100′还包括控制振荡器的振荡频率的装置。根据如何建立这些谐振器，这些控制装置是机械、电、光、热装置。
正交耦合可控振荡器(振荡器)的实际实施的一个实施例公开在图3中。为了示意目的，使用CMOS晶体管。然而，可以利用双极、CMOS或BiCMOS技术或其组合来实施此电路。对于双极晶体管来说，控制电极、第一主电极和第二主电极分别对应于基极、发射极和集电极。对于MOS晶体管来说，控制电极、第一主电极和第二主电极分别对应于栅极、源极和漏极。
图1所示的两个相同的电路模块100与100′在图3中利用虚线来表示。
图2所示的VCCS101在此作为示例利用CMOS晶体管T3、T4、T7和T8来实现，通过电阻R给这些晶体管供电，但也能使用电流源。
无稳态多谐振荡器104的有源器件105利用用于电路模块100′的晶体管T1与T2并利用用于电路模块100的晶体管T5与T6来实现。利用CMOS技术来实现这些晶体管，也能使用任何类型的可控半导体元件。
为示意目的，谐振器104是实现为电感器L与用作可变电容器的变容二极管C之间的并联的振荡回路。谐振器104能是任何类型的谐振电路，只要它在谐振频率上具有最小阻抗就行。谐振器能实现为振荡回路，如图4所示的耦合振荡回路和具有前述特性的任何其他实施方式。图4中的谐振器包括通过互感器M耦合的两个LC振荡回路201与202。振荡回路201包括利用电感器L1与电容器C1实现的LC振荡回路，而振荡回路202利用电感器L2和电容器C2来实现。
根据特定实施方式，利用电、机械、光或热装置来控制谐振器谐振频率。为示意目的，图3所示的振荡回路104的谐振频率利用控制变容二极管C上的电压的电压V来控制。
相移器102在此利用电容器来实现，也可以使用在通过晶体管T1与T3、T2与T4、T5与T7、T6与T8的电流之间实现几乎0度相移的任何相移器。
两个相同的电路模块100与100′分别通过T3、T4和T7、T8进行耦合，栅极电压与漏极电压之间的相移由于相移器102而几乎为90度，结果是电流I1与I3、I2与I4、I5与I7、I6与I8基本上同相，并且在谐振时在振荡电路104中提供的电流是可能的最大值。
图2中的电流110对应于图3中的电流I3、I4、I7和I8，而图2中的电流111对应于图3中的电流I1、I2、I5和I6。
用于通过双向通信信道304通信的通信设备300的实施例表示在图5中。此通信设备包括双向通信信道304，根据其中使用此设备的应用和/或操作模式将此信道连接到接收模块301或连接到发射模块302。根据本发明的振荡器(QVCO)303提供周期信号给接收模块301或发射模块302。如果接收的信号IN出现在双向信道304中，则将此接收信号传送给接收模块301，在此接收模块301中将此接收信IN与振荡器303的周期信号混频。在接收模块301的输出端上获得能照原样使用的输出信号OUT1或能进一步放大和解调此输出信号，以获得它包含的有用信息。
如果在发射模块302的输入端上出现输入信号IN1，则在发射模块302中将此输入信号IN1与振荡器303提供的周期信号混频。在双向信道304中，则出现通过此信道发射的信号OUT。在此应指出：此双向信道能是在接收与发射信号中采用的简单天线、光纤和一般的任何器件，能保证双向发送/接收信道，其中信号能是电、光信号等。
在本发明的优选实施例中，输出信号OUT1是中频信号，输入信号IN1是合适编码的模拟信号，双向通信信道304是天线，并且设备300是在优选在芯片上实现的蓝牙天线电模块中使用的收发信机。
注意，本发明的保护范围不限于本文所述的实施例，本发明的保护范围也不利用权利要求书中的标号来限制。字“包括”不排除权利要求书中所述之外的其他部分，单元之前的字“一(个)”不排除多个这样的单元。形成本发明一部分的装置可以以专用硬件的形式或以编程的通用处理器的形式来实现。本发明在于每个新特性或特性的组合。

Claims (8)

1.一种正交耦合可控振荡器，包括：
第一与第二电路模块，每个电路模块(100与100′)包括无稳态多谐振荡器电路(103)，第一电路模块(100)与第二电路模块(100′)耦合，而第二电路模块(100′)与第一电路模块(100)交叉耦合
在每个电路模块(100与100′)中，第一与第二压控电流源(101)(VCCS)的特征在于：
每个电路模块(100与100′)具有谐振器(104)，用于确定那个模块中包括的无稳态多谐振荡器电路(103)的振荡频率，
在每个电路模块(100与100′)中，每个VCCS与相应的移相器(102)耦合，用于移位利用VCCS(101)提供给那个电路模块中包括的谐振器(104)的电流(110)的相位。
2.根据权利要求1的振荡器，还包括控制无稳态多谐振荡器电路的振荡频率以控制此振荡器的振荡频率的装置。
3.根据权利要求1的振荡器，其特征在于，利用VCCS提供的相移电流和通过无稳态多谐振荡器电路(103)的有源器件(105)的电流基本同相。
4.根据权利要求1的振荡器，其特征在于，谐振器(104)是LC电路。
5.根据权利要求1的振荡器，其特征在于，谐振器(104)包括互感耦合的第一LC电路(201)与第二LC电路(202)。
6.一种通信设备(300)，用于通过双向通信信道(304)进行通信，包括用于生成周期信号的如前面权利要求之一(QVCO)所述的振荡器(303)、用于从周期信号和从此信道(304)接收的接收信号(IN)中生成输出信号(OUT1)的接收模块(301)并且还包括用于从周期信号和输入信号(IN1)中生成发射信号(OUT)以便发送给此信道的发射模块(302)。
7.根据权利要求6的设备，其特征在于，此振荡器(303)构造为提供在接收模块(301)中与输入信号(IN)混频的周期信号以获得较低频率信号(OUT1)。
8.根据权利要求6的设备，其特征在于，此振荡器(303)构造为提供在发射模块(302)中输入信号(IN1)混频的周期信号以获得此信号(OUT)。
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