CN1433570A - 用以检测浮渣/封闭接触孔和线路的cd－sem信号分析 - Google Patents

用以检测浮渣/封闭接触孔和线路的cd－sem信号分析 Download PDF

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Publication number
CN1433570A
CN1433570A CN00818737A CN00818737A CN1433570A CN 1433570 A CN1433570 A CN 1433570A CN 00818737 A CN00818737 A CN 00818737A CN 00818737 A CN00818737 A CN 00818737A CN 1433570 A CN1433570 A CN 1433570A
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CN
China
Prior art keywords
signal
disk
silica frost
scum silica
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00818737A
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English (en)
Chinese (zh)
Inventor
B·K·楚
B·新恩
S·K·耶德
K·A·泛
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1433570A publication Critical patent/CN1433570A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
CN00818737A 2000-01-31 2000-12-13 用以检测浮渣/封闭接触孔和线路的cd－sem信号分析 Pending CN1433570A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/495,281 US6373053B1 (en) 2000-01-31 2000-01-31 Analysis of CD-SEM signal to detect scummed/closed contact holes and lines
US09/495,281 2000-01-31

Publications (1)

Publication Number Publication Date
CN1433570A true CN1433570A (zh) 2003-07-30

Family

ID=23968034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00818737A Pending CN1433570A (zh) 2000-01-31 2000-12-13 用以检测浮渣/封闭接触孔和线路的cd－sem信号分析

Country Status (6)

Country Link
US (1) US6373053B1 (ja)
EP (1) EP1252653A2 (ja)
JP (1) JP2003521813A (ja)
KR (1) KR20020074487A (ja)
CN (1) CN1433570A (ja)
WO (1) WO2001055737A2 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100383258B1 (ko) * 2000-11-09 2003-05-09 삼성전자주식회사 주사 전자 현미경을 이용한 측정 장치의 측정 에러 검출방법
US6862545B1 (en) 2003-04-03 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Linewidth measurement tool calibration method employing linewidth standard
US7098456B1 (en) * 2004-08-13 2006-08-29 Kla-Tencor Technologies Corporation Method and apparatus for accurate e-beam metrology
US7235414B1 (en) * 2005-03-01 2007-06-26 Advanced Micro Devices, Inc. Using scatterometry to verify contact hole opening during tapered bilayer etch
JP4981410B2 (ja) * 2006-10-31 2012-07-18 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡、走査型電子顕微鏡を用いたパターンの複合検査方法、および走査型電子顕微鏡の制御装置
US9595091B2 (en) * 2012-04-19 2017-03-14 Applied Materials Israel, Ltd. Defect classification using topographical attributes
US9858658B2 (en) 2012-04-19 2018-01-02 Applied Materials Israel Ltd Defect classification using CAD-based context attributes

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2700252C2 (de) * 1977-01-05 1985-03-14 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Prüfen definierter Strukturen
DE3427981A1 (de) * 1984-07-28 1986-02-06 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zur fehlererkennung an definierten strukturen
US4689491A (en) * 1985-04-19 1987-08-25 Datasonics Corp. Semiconductor wafer scanning system
US5097430A (en) 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
US5331370A (en) * 1993-05-03 1994-07-19 Hewlett-Packard Company Method and apparatus for determining a feature-forming variant of a lithographic system
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5801821A (en) * 1995-06-30 1998-09-01 Intel Corporation Photolithography method using coherence distance control
JPH09184714A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd パターン寸法測定方法
DE19612939C2 (de) * 1996-04-01 1998-10-29 Jenoptik Jena Gmbh Verfahren und Einrichtung zur Auswahl von Meßgebieten bei der Vermessung von Strukturbreiten und Überdeckungsgenauigkeiten in Herstellungsprozessen für integrierte Schaltkreise
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
US6205239B1 (en) * 1996-05-31 2001-03-20 Texas Instruments Incorporated System and method for circuit repair
US6091846A (en) * 1996-05-31 2000-07-18 Texas Instruments Incorporated Method and system for anomaly detection
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6987873B1 (en) * 1998-07-08 2006-01-17 Applied Materials, Inc. Automatic defect classification with invariant core classes

Also Published As

Publication number Publication date
WO2001055737A2 (en) 2001-08-02
WO2001055737A3 (en) 2002-05-02
JP2003521813A (ja) 2003-07-15
EP1252653A2 (en) 2002-10-30
KR20020074487A (ko) 2002-09-30
US6373053B1 (en) 2002-04-16

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