CN1424744A - 一种高介电栅堆层结构 - Google Patents
一种高介电栅堆层结构 Download PDFInfo
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- CN1424744A CN1424744A CN 03114706 CN03114706A CN1424744A CN 1424744 A CN1424744 A CN 1424744A CN 03114706 CN03114706 CN 03114706 CN 03114706 A CN03114706 A CN 03114706A CN 1424744 A CN1424744 A CN 1424744A
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- high dielectric
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB031147062A CN1319128C (zh) | 2003-01-02 | 2003-01-02 | 一种高介电栅堆层结构 |
Applications Claiming Priority (1)
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CNB031147062A CN1319128C (zh) | 2003-01-02 | 2003-01-02 | 一种高介电栅堆层结构 |
Publications (2)
Publication Number | Publication Date |
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CN1424744A true CN1424744A (zh) | 2003-06-18 |
CN1319128C CN1319128C (zh) | 2007-05-30 |
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CNB031147062A Expired - Fee Related CN1319128C (zh) | 2003-01-02 | 2003-01-02 | 一种高介电栅堆层结构 |
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CN (1) | CN1319128C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100397644C (zh) * | 2003-08-13 | 2008-06-25 | 三星电子株式会社 | 半导体设备的电容器和使用同样电容器的存储器设备 |
CN102194685A (zh) * | 2011-04-08 | 2011-09-21 | 南京大学 | 调控Ge衬底与TixAlyO薄膜间能带补偿的方法 |
CN102779845A (zh) * | 2012-06-25 | 2012-11-14 | 西安交通大学 | 一种叠层金属氧化物栅介质层及其制备方法 |
CN105161415A (zh) * | 2015-08-31 | 2015-12-16 | 上海集成电路研发中心有限公司 | 高介电常数薄膜-氧化铝叠层结构绝缘薄膜及其制备方法 |
CN112864319A (zh) * | 2021-01-07 | 2021-05-28 | 长鑫存储技术有限公司 | 电容结构的制备方法、电容结构及存储器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6541806B2 (en) * | 1999-01-14 | 2003-04-01 | Symetrix Corporation | Ferroelectric device with capping layer and method of making same |
US6420230B1 (en) * | 2000-08-31 | 2002-07-16 | Micron Technology, Inc. | Capacitor fabrication methods and capacitor constructions |
US6831339B2 (en) * | 2001-01-08 | 2004-12-14 | International Business Machines Corporation | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same |
JP2002222934A (ja) * | 2001-01-29 | 2002-08-09 | Nec Corp | 半導体装置およびその製造方法 |
-
2003
- 2003-01-02 CN CNB031147062A patent/CN1319128C/zh not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100397644C (zh) * | 2003-08-13 | 2008-06-25 | 三星电子株式会社 | 半导体设备的电容器和使用同样电容器的存储器设备 |
CN102194685A (zh) * | 2011-04-08 | 2011-09-21 | 南京大学 | 调控Ge衬底与TixAlyO薄膜间能带补偿的方法 |
CN102194685B (zh) * | 2011-04-08 | 2012-07-25 | 南京大学 | 调控Ge衬底与TixAlyO薄膜间能带补偿的方法 |
CN102779845A (zh) * | 2012-06-25 | 2012-11-14 | 西安交通大学 | 一种叠层金属氧化物栅介质层及其制备方法 |
CN105161415A (zh) * | 2015-08-31 | 2015-12-16 | 上海集成电路研发中心有限公司 | 高介电常数薄膜-氧化铝叠层结构绝缘薄膜及其制备方法 |
CN105161415B (zh) * | 2015-08-31 | 2018-06-22 | 上海集成电路研发中心有限公司 | 高介电常数薄膜-氧化铝叠层结构绝缘薄膜及其制备方法 |
CN112864319A (zh) * | 2021-01-07 | 2021-05-28 | 长鑫存储技术有限公司 | 电容结构的制备方法、电容结构及存储器 |
CN112864319B (zh) * | 2021-01-07 | 2022-07-22 | 长鑫存储技术有限公司 | 电容结构的制备方法、电容结构及存储器 |
Also Published As
Publication number | Publication date |
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CN1319128C (zh) | 2007-05-30 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070530 Termination date: 20160102 |
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EXPY | Termination of patent right or utility model |