CN1423345A - Structure and method for packaging colour light-emitting diode with stacked wafer - Google Patents
Structure and method for packaging colour light-emitting diode with stacked wafer Download PDFInfo
- Publication number
- CN1423345A CN1423345A CN 01139691 CN01139691A CN1423345A CN 1423345 A CN1423345 A CN 1423345A CN 01139691 CN01139691 CN 01139691 CN 01139691 A CN01139691 A CN 01139691A CN 1423345 A CN1423345 A CN 1423345A
- Authority
- CN
- China
- Prior art keywords
- led wafer
- light led
- blue
- light
- stacked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
This invention discloses a laminated chip full color LED package structure and method mainly utilizing the package technology to die bond more than two various single-colour LED by lamination by heat or supersonic wave with metal oxide transparent conductive layer and metal reflection layer to make the lower layer of monocolour light mix with another via the transparent conductive layer to generate another color light source. The lowest is die bonded with metal reflection layer to reflect different colors of light and increase its intensity. In near distance, white or full color light are displayed and a full color LED is got by laminating the three basic colors while for remote two separated LED are used eg. yellow blue or red, green.
Description
Technical field
The present invention relates to a kind of encapsulating structure and method of colour light-emitting diode, particularly a kind of stacked wafer and to make the monochromatic light smear be that color light source is supplied the LED that full color shows.
Background technology
(Light Emitted Diode LED) is the device that semi-conducting material is made to light-emitting diode, also is a kind of minimum solid state light emitter, electric energy can be converted into light.Not only volume is little, and the life-span is long, driving voltage is low, reaction rate is fast, shock resistance is good, can cooperate the demand of light, the thin and miniaturization of various application apparatuss, becomes product very universal in the daily life already.
Light-emitting diode is the variation that utilizes various kinds of compound semiconductors material and device architecture, designs shades of colours such as red, orange, yellow, green, blue, purple, and the LED of invisible light such as infrared, ultraviolet.Be fit to make the material of the above high-brightness LED of 1000mcd, wavelength is respectively AlGaAs, InGaAlP and InGaN from long to short.
AlGaAs be fit to make high brightness ruddiness and infrared light LED, commercially produces in batches with LPE brilliant method of heap of stone, to use two heterojunction structures (DH).
InGaAlP is fit to that high brightness is red, tangerine, Huang and green-yellow light LED, commercially produces in batches with MOVPE brilliant method of heap of stone, uses two heterojunctions and quantum well (Quantum Well) structure.The structure of known yellow light LED wafer 10 as shown in Figure 1, the anodal wiring pad 1 among Fig. 1 connects positive pole, it typically is gold (Au), and forms with the metal evaporation method.Substrate 13 is n type GaAs or GaP, utilizes gas phase crystalline substance of heap of stone or liquid built crystal technique on the substrate 13 again, and brilliant last layer P type InGaAlP epitaxial layer 14 of heap of stone utilizes metal evaporation method evaporating Al or Au to form the negative pole wiring pad 12 that connects negative pole again.
InGaN is fit to dark green, blue, the ultraviolet leds of high brightness, produces in batches with high temperature MOVPE brilliant method of heap of stone, also uses two heterojunctions and quantum well structures, and efficient is than the above two height.The structure of known green glow or blue-ray LED wafer 20 as shown in Figure 2, n type InGaN epitaxial layer 24 and p type InGaN epitaxial layer 25 are of heap of stone brilliant on sapphire (sapphire) substrate 23 of light-permeable with gas phase crystalline substance of heap of stone or liquid built crystal technique among Fig. 2.Anodal wiring pad 21 is p type InGaN, connects positive pole, and n type InGaN then forms negative pole wiring pad 22, connects negative pole.But also can build brilliant p type InGaN epitaxial layer 25 earlier, brilliant n type InGaN epitaxial layer 24 of heap of stone again.After being to add sapphire substrate 23 with Fig. 1 difference, the position of negative pole wiring pad 22 is also different, but sapphire substrate 23 and non-essential.
For obtaining red, green, blue or gold-tinted color in addition, chromaticity diagram as shown in Figure 3 (Chromaticity diagram) is adjusted the brightness of Red Green Blue LED, can obtain different colors.As adjust brightness blue, yellow LED along AB line among the figure, can get white light at middle AB and the CD line place of joining; Can be with blue color away from mid point near the A point.If Red is arranged, by integrating brightness of all kinds, get final product the light source of full color.Known technology as shown in Figure 4, with the LED wafer 401,402,403 of Red Green Blue side by side or line up array and engage (die bond) with wafer and be installed on the PC plate, power supply by the anodal R+406 supply of ruddiness ruddiness, ground connection 404 through PC plate 405 is connected to negative pole, other is green, blue light also connects power supply in the same way, as shown in Figure 5.General for example red LED 401 is 20mA all with the current source supply fixed current of about 20mA, and voltage is about 2V; Green LED 402 is 20mA, and voltage is about 3.5V; Blue led 403 is 20mA, and voltage is about 3.5V can get white light, and its wasted work rate is about 180mW (20 * 2+20 * 3.5+20 * 3.5=180mW).If need full color, then electric current still is 20mA, controls lighting the time of wafer of all kinds respectively by switch 601,602,603, looks the time of integration and makes up shades of colour, and its equivalent electric circuit as shown in Figure 6.More than the encapsulating structure of known full-color LED, fully with the supply of 20mA electric current, and different and be combined into versicolor method to light time length, its control is very accurately difficult, the design of power supply control IC is also very complicated.And electric current is fixed, and caloric value is dispelled the heat greatly and is difficult for, and the life-span of LED is shortened, and near field (closely watching) still visible three kinds of colors only can provide far field (Farfield) to watch full color.Closely watch indoor but general display unit is many, so do not meet the market demand.
Summary of the invention
The object of the present invention is to provide a kind of semiconductor LED stack package structure of full color, be fit near field and far field and show.
Another object of the present invention is to provide a kind of semiconductor LED stack package structure, to strengthen luminous intensity with reflector full color.
Another purpose of the present invention is to provide a kind of metal oxide transparent conducting layer that utilizes to engage the light source that the polycrystalline sheet is made stacked structure, and its resolution (resolution) is good, is fit to the semiconductor LED stack package structure that near field or far field are watched.
An order more of the present invention is to provide a kind of manufacturing full color semiconductor LED stack package structure, reduces encapsulation volume.
The present invention also has a purpose to be to provide a kind of full color semiconductor LED stack package structure, controls luminous intensity with the size of controlling each LED electric current with synthetic light sources of different colors, power is reduced, and increase radiating efficiency.
For achieving the above object, improve the shortcoming of general full color LED, the encapsulating structure of stacked three primary colors light-emitting diode of the present invention (LED) is fit near field (closely) and shows.Be to utilize metallic reflector and transparency conducting layer, and make colourama LED on the direct stacked PC of the being incorporated into plate of the LED wafer of red, blue, green three kinds of colors.It comprises at least: (a) PC substrate, and plate the layer of metal reflector on it and form pattern, comprise die bond pad, the anodal wiring pad of a ruddiness, the anodal wiring pad of a blue light, the anodal wiring pad of a green glow and a public negative pole wiring pad; (b) the first red-light LED wafer, have the ruddiness positive pole of a transparency conducting layer and the ruddiness negative pole of a metallic reflector, one side of this ruddiness positive pole has the square metal reflector to make anodal wiring pad of ruddiness and reflect red, this red-light LED wafer directly is stacked and placed on the die bond pad of PC plate, and gives combination; (c) the second blue-ray LED wafer, have the blue light negative pole of a transparency conducting layer and the blue light positive pole of a transparency conducting layer, one side of this blue light positive pole has a square metallic reflector and makes the anodal wiring pad of blue light and reflect red and blue light, and have a strip metallic reflector and make negative pole wiring pad, this blue-ray LED wafer directly is stacked and placed on the aforementioned red-light LED wafer, and gives combination; (d) the 3rd green light LED wafer, have the green glow positive pole of a transparency conducting layer and the green glow negative pole of a transparency conducting layer, one side of this green glow positive pole has a square metallic reflector and makes the anodal wiring pad of green glow and reflect red and blue light, and the green glow negative pole with a square metal reflector is made the wiring pad, this green light LED wafer directly is stacked and placed on the aforementioned blue-ray LED wafer, and gives combination; (e) a plurality of metal wires are connected to the anodal wiring pad on this first red-light LED wafer, this second blue-ray LED wafer and the 3rd green light LED wafer and negative pole wiring pad respectively on the anodal wiring pad and negative pole wiring pad on the PC plate.
Metallic reflector on the above-mentioned PC plate and wiring pad are copper or gold, and its thickness is 1000 dusts-20000 dusts, are preferably 2000 dusts-5000 dust.Above-mentioned red-light LED wafer is a P type InGaP brilliant pn junction diode on n type GaAS substrate of heap of stone, and its size is the rectangle of 400 μ m-1000 μ m.One side of the ruddiness positive pole of above-mentioned red-light LED wafer has the metallic reflector of a strip and makes anodal wiring pad of ruddiness and reflect red.Above-mentioned blue-ray LED wafer is a pn junction diode of building brilliant n type InGaN and P type InGaN gained on transparent sapphire, and its size is the rectangle of 300 μ m-900 μ m.One side of the blue light positive pole of above-mentioned blue-ray LED wafer has a square metallic reflector and makes the anodal wiring pad of blue light and reflect red and blue light, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after the P type InGaN of a strip was removed in etching.Above-mentioned green light LED wafer is a pn junction diode of building brilliant n type InGaN and P type InGaN gained on transparent sapphire, and its size is the square of 200 μ m-800 μ m.One side of the green glow positive pole of above-mentioned green light LED wafer has a square metallic reflector and makes the anodal wiring pad of green glow and reflect red and blue light, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after a square P type InGaN was removed in etching.Above-mentioned metallic reflector is aluminium or gold, and its thickness is 1000 dusts-20000 dusts, is preferably 2000 dusts-5000 dust.Above-mentioned transparency conducting layer is indium oxide (In
2O
3) or tin oxide (SnO
2) and other transparency conducting layer, thickness is 500 dusts-10000 dusts, is preferably 500 dusts-1000 dust.The metallic reflector of this square positive pole is aluminium or gold, and its width is 50-200 μ m, is preferably 100 μ m.Above-mentioned stacked combination be the heating substrate to 450-550 ℃ metal eutectic point, and fusion bonded; Or with the ultrasonic wave fusion combination; Or it is bonding with transparent viscose glue.
The encapsulating structure of the stacked light-emitting diode (LED) that another suitable far field of the present invention (Far field) is watched is the encapsulating structure that stacked yellow light LED wafer, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute color LED side by side.Be to utilize metallic reflector and transparency conducting layer, in addition position adjacent on red-light LED wafer and the stacked PC of the being incorporated into plate of green light LED wafer formed the colourama LED of encapsulation arranged side by side on yellow light LED wafer and the stacked PC of the being incorporated into plate of blue-ray LED wafer.It comprises at least: (a) PC substrate, plate the layer of metal reflector on it and form pattern, comprise die bond pad, the anodal wiring pad of a ruddiness, the anodal connection pad of a blue light, the anodal wiring pad of a gold-tinted, the anodal wiring pad of a green glow, reach a public negative pole wiring pad; (b) one first yellow light LED wafer has the gold-tinted negative pole of a metallic reflector and the gold-tinted positive pole of a transparency conducting layer, and a side of this gold-tinted positive pole has the metallic reflector of a strip and makes anodal wiring pad of gold-tinted and reflect yellow; (c) one second blue-ray LED wafer, have the blue light negative pole of a transparent conducting shell and the blue light positive pole of a transparency conducting layer, this blue light positive pole-side has a square metallic reflector and makes the anodal wiring pad of blue light and reflect yellow and blue light, and have a rectangular square metallic reflector and make negative pole wiring pad, this blue-ray LED wafer directly is stacked and placed on the aforementioned yellow light LED wafer, and gives combination; (d) one the 3rd red-light LED wafer has the ruddiness negative pole and a transparency conducting layer ruddiness positive pole of a metallic reflector, and a side of this ruddiness positive pole has the metallic reflector of a strip and makes anodal wiring pad of ruddiness and reflect red; (e) one the 4th green light LED wafer, have the green glow positive pole of a transparency conducting layer and the green glow negative pole of a transparency conducting layer, one side of this green glow positive pole has a square metallic reflector and makes the anodal wiring pad of green glow and reflect red and green glow, and the green glow negative pole with a strip metallic reflector is made the wiring pad, this green light LED wafer directly is stacked and placed on the aforementioned red-light LED wafer, and gives combination; (f) a plurality of metal wires are connected to the anodal wiring pad on this first red yellow light LED wafer, this second blue-ray LED wafer, the 3rd red-light LED wafer and the 4th green light LED wafer and negative pole wiring pad respectively on the anodal wiring pad and negative pole wiring pad on the PC plate.
Description of drawings
Fig. 1 is the structure of known yellow light LED wafer;
Fig. 2 is the structure of known blue light or green wafer;
Fig. 3 is chromaticity diagram (chromaticity diagram);
Fig. 4 is the three primary colors encapsulating structure plane graph arranged side by side of the color LED of known technology;
Fig. 5 is the profile of Fig. 4 along the A-A line;
Fig. 6 is equivalent electric circuit and the bias method thereof of Fig. 4;
Fig. 7 is the disclosed closely stacked trichromatic color LED encapsulating structure plane graph of usefulness that is fit to;
Fig. 8 is the profile of Fig. 7 along the stacked trichromatic color LED encapsulating structure of A-A line;
Fig. 9 is the profile of Fig. 7 along the stacked trichromatic color LED encapsulating structure of B-B line;
Figure 10 is the profile of Fig. 7 along the stacked trichromatic color LED encapsulating structure of C-C line;
Figure 11 is the equivalent electric circuit and the bias method thereof of the stacked trichromatic color LED encapsulation of Fig. 7;
Figure 12 is disclosed suitable remote stacked twin crystal encapsulating structure plane graph arranged side by side;
Figure 13 is the profile of Figure 12 along the A-A line;
Figure 14 is the profile of Figure 12 along the B-B line;
Figure 15 is equivalent electric circuit and the bias method thereof that the stacked twin crystal of Figure 12 encapsulates side by side.
The accompanying drawing main mark is respectively:
10: the gold-tinted wafer
11: yellow light LED positive pole (Y+)
12:Al or Au negative pole (Y-)
13:n-GaAs or GaP substrate
The 14:p-InGaAlP epitaxial layer
20: blue light or green wafer
21: gold-tinted or green light LED positive pole (B+ or G+)
22:Al or Au negative pole (B-or G-)
23: sapphire (Al
2O
3) substrate
24:n type InGaN is of heap of stone brilliant
25:p type InGaN is of heap of stone brilliant
401: red wafer
402: green wafer
403: the blue light wafer
404: metal level
The 405:PC plate
406: ruddiness positive pole (R+) wiring pad
407: green glow positive pole (G+) wiring pad
408: blue light positive pole (B+) wiring pad
601: the red-light LED switch
602: the green light LED switch
603: the blue-ray LED switch
701: common ground electrode connection pad
801: reflector and ruddiness negative pole (R-)
802: transparency conducting layer
803: transparency conducting layer
804: blue light positive pole (B+) wiring pad
805: sapphire
901: blue-ray LED negative pole (B-)
902: green light LED negative pole (G-)
121:Al or Au yellow light LED positive pole (Y+)
132: yellow light LED negative pole (Y-)
133: transparency conducting layer
Embodiment
Content of the present invention can be set forth explanation by following embodiment and its relevant drawings.The various LED materials that the present invention uses are also unrestricted, so long as it is all available to send the LED wafer of Red Green Blue and yellow.Wafer can be used known method production, and gets final product according to lattice that the present invention establishes rules (size, bias value, brightness, color, Metal Contact material etc.) manufacturing.Before encapsulation, the classification of should measuring earlier and be graded, same levels or cohorts's (as bias voltage, brightness, color) are used for same encapsulation according to structure of the present invention.
The present invention comprises a printed circuit board (PCB), the pattern that metallic reflector is arranged on it is to make the need that wafer engages (die bond), after the combination of first wafer, second wafer promptly is stacked and placed on and does the wafer combination on first wafer, and associated methods can be used heat fused, ultrasonic wave fusion or bonding with transparent viscose glue.The 3rd wafer is incorporated on second wafer again, carries out line at last positive pole is connected on the power supply, and negative pole is connected to public earth terminal.
Fig. 7 is that the present invention is fit to the closely plane graph of first embodiment of the stacked trichromatic color LED assembling structure of usefulness; Fig. 8 is the profile of Fig. 7 along the A-A line.In PC plate 405 upper surface sputters or evaporation or plating layer of metal reflector 801, be about 1000 dusts-20000 dust with sputter one deck, the copper (Cu) or the gold (Au) that are preferably 2000 dusts-5000 dust form.Then, prepare the first red-light LED wafer 401, can make with known technology by P type InGaAlP/n type GaAs or other material.Substrate sputter or evaporation have 1000 dusts-20000 dust, are preferably the copper (Cu) or the gold (Au) of 2000 dusts-5000 dust.Upper strata evaporation or sputter have 200 dusts-10000 dust, be preferably the transparency conducting layer 802 of 500 dusts-1000 dust, in a side and sputter one width is arranged is 50 μ m-200 μ m, the strip metal reflector 406 that is preferably 100 μ m is with reflection to red light and as the positive pole of red-light LED, exempt on the one hand ruddiness separately forward emission form and disturb, but on the other hand then reflect red make its via the reflector on the PC plate 801 upwards reflection mix to make full use of the ruddiness energy with other light.The size of this red-light LED wafer 401 is about 400 μ m-1000 μ m, then with the eutectic point (eutectic point) of heating substrate to metal, and for example 450-550 ℃, or utilize ultrasonic wave with fusion or bonding, in conjunction with red wafer 401 and PC plate with transparent viscose glue.The reflector 801 of substrate is connected to the ground connection public electrode 701 of PC plate, that is the grounding electrode of ruddiness.403 of the second blue light wafers are of heap of stone brilliant on the sapphire 805 of light-permeable with n type InGaN, brilliant P type InGaN of heap of stone thereon again, all make with the movpe technology, all sputter or thick 200 dusts-10000 of evaporation dust on substrate and upper strata again, be preferably the transparency conducting layer 802 and 803 of 500 dusts-1000 dust, metallic reflector 804 at a side also sputter one wide 100 μ m, as copper (Cu) or gold (Au), so that blue light and reflection to red light are returned, and as the positive pole of blue light, exempt on the one hand light that blue light mixes with ruddiness and launch forward to form and disturb, then blue light and reflection to red light can be made it make progress on the other hand and reflect and mix the energy that makes full use of blue light and ruddiness with green glow via the metallic reflector on the PC plate.In addition, the P type InGaN of about 100 μ m * 100 μ m is removed in etching, and the metallic reflector that plates layer of copper (Cu) or gold (Au) thereon is with reflect red and as the negative pole 901 of blue light, as Fig. 7 and shown in Figure 9.The size of this blue light wafer is about 300 μ m-900 μ m, then with the eutectic point (eutectic point) of heated substrates to metal, for example 450-550 ℃, or utilize ultrasonic wave with fusion or with this blue light wafer 403 of transparent viscose glue adhesive bond and red wafer 401.The 3rd green glow wafer 402 is brilliant n type InGaN of heap of stone and P type InGaN and get on the sapphire 805 of light-permeable, also can make with known technology, all sputter or thick 200 dusts-10000 of evaporation dust on substrate and upper strata again, be preferably the transparency conducting layer of 500 dusts-1000 dust, the transparency conducting layer on upper strata is promptly as the green glow positive pole, remove the P type InGaN of about 100 μ m * 100 μ m in addition with etching, the metallic reflector 902 that plates layer of copper (Cu) or gold (Au) thereon forms interference with reflect red and blue light in order to avoid it is launched forward, and can be with the ruddiness of reflection and blue light via upwards reflection and mixing of the metallic reflector on the PC plate with green glow, to make full use of the energy of ruddiness and blue light, this metallic reflector 902 is also as the green glow negative pole, as Fig. 7 and shown in Figure 9.The size of this green wafer is about 200 μ m-800 μ m, then with the eutectic point (eutectic point) of heated substrates to metal, for example 450-550 ℃, or utilize ultrasonic wave with fusion or with this green wafer 402 of transparent viscose glue adhesive bond and blue light wafer 403, as Fig. 8, Fig. 9, shown in Figure 10.With metal connecting line (wire bond) ruddiness on the wafer, green glow, blue light positive pole are connected to ruddiness, green glow, blue light positive pole on the PC plate respectively, blue light, green glow negative pole are connected to grounding electrode 701 on the PC plate respectively, as Fig. 7, shown in Figure 10.Promptly finish the encapsulation of the present invention's first example again with the transparent plastic material sealing, its equivalent electric circuit as shown in figure 11.
The present invention is that the bias voltage of modulation wafer of all kinds must different luminous intensities be mixed to change its electric current, and obtains the light (colour with reference to figure 3 changes) of different colours.Not only can save the energy and resolution (resolution) height, increase colour quality, and do not need can reduce caloric value with big galvanoluminescence entirely, its heat radiation is preferable, can increase the wafer life-span.
Figure 12 is the plane graph of second embodiment of the present invention's encapsulating structure of being fit to the stacked champac of remote usefulness and red green twin crystal color LED arranged side by side.For simplify the fusion bonded operation and save power supply (needn't be with three color wafers, can be only with two second colors wafers luminous get final product white light or other color), when remote demonstration, can satisfy the demands with twin crystal encapsulating structure arranged side by side.With reference to Figure 12 and Figure 13, Figure 13 is the profile of Figure 12 along the A-A line.At PC plate 405 upper surface sputter evaporations or electroplate layer of metal reflector 801, thick about 1000 dusts-20000 dust is preferably the copper (Cu) or the gold (Au) of 2000 dusts-5000 dust.Prepare the first red-light LED wafer 401 then, can make with known technology by P type InGaAlP/n type GaAS or other material.Substrate sputter or evaporation have 1000 dusts-20000 dust, are preferably the copper (Cu) or gold (Au) 801 of 2000 dusts-5000 dust.Upper strata evaporation or sputter have 200 dusts-10000 dust, be preferably the transparency conducting layer 803 of 500 dusts-1000 dust, at the banded copper (Cu) of a side and sputter one wide 100 μ m or gold (Au) metallic reflector 406 with reflection to red light, and as the positive pole of red-light LED, exempt ruddiness emission formation interference forward separately on the one hand, on the other hand can be with it upwards mixes its reflection to make full use of the energy of ruddiness with green glow via the reflector on the PC plate 801 behind the reflection to red light.The size of this red-light LED wafer 401 is about 300 μ m-700 μ m, then with the eutectic point of heating substrate to metal, for example 450-550 ℃, or utilize ultrasonic wave with fusion or with transparent viscose glue adhesive bond wafer 401 and PC plate, the reflector 801 of substrate is connected to the ground connection public electrode 701 of PC plate, that is the negative pole of ruddiness.Prepare the second green light LED wafer 402, be n type InGaN/P type InGaN is of heap of stone brilliant on sapphire 805 with known technology, all sputter or thick about 200 dusts-10000 dust of evaporation on substrate and upper strata again, be preferably the transparency conducting layer of 500 dusts-1000 dust, the transparency conducting layer on upper strata is promptly as the green glow positive pole, the metallic reflector 902 of in addition removing the P type InGaN of about 100 μ m * 100 μ m with etching and plating layer of copper (Cu) or gold (Au) thereon is with reflect red,, it forms interference in order to avoid launching forward, and the ruddiness of reflection upwards can be reflected via the metallic reflector on the PC plate again and mixes to make full use of the energy of ruddiness with green glow, this metallic reflector 902 is also as the green glow negative pole, as Figure 12 and shown in Figure 13.Then with the heating substrate to the eutectic point of metal, for example 450-550 ℃, or utilize ultrasonic wave to be stacked combination with fusion or with transparent viscose glue adhesive bond wafer 403 and wafer 131.Prepare the 3rd yellow light LED wafer 131, can make with known technology by n type GaAs/P type InGaAlP or other material, substrate sputter or evaporation have 1000 dusts-20000 dust, the copper (Cu) or the gold (Au) that are preferably 2000 dusts-5000 dust are made reflector and gold-tinted negative pole 132, upper strata evaporation or sputter have 200 dusts-10000 dust, be preferably the transparency conducting layer 133 of 500 dusts-1000 dust, at the banded copper (Cu) of a side and sputter one wide about 100 μ m or gold (Au) metallic reflector 134 with the gold-tinted reflection, and as the yellow light LED positive pole.Exempt on the one hand gold-tinted separately forward emission form and disturb, the gold-tinted reflection can be made on the other hand its via the reflector on the PC plate 801 upwards with gold-tinted and blue light to make full use of the energy of gold-tinted.The size of this yellow light LED wafer 131 is about 300 μ m-1000 μ m.Then with the heating substrate to the eutectic point of metal, for example 450-550 ℃, or utilize ultrasonic wave with fusion or with transparent viscose glue adhesive bond wafer 131 and PC plate, the reflector 801 of substrate is connected to the grounding electrode 701 of PC plate, and is the negative pole of gold-tinted.Prepare the 4th blue-ray LED wafer 403 again, be n type InGaN/P type InGaN is of heap of stone brilliant on sapphire 805 with known technology, all sputter or thick about 200 dusts-10000 dust of evaporation on substrate and upper strata are preferably the transparency conducting layer of 500 dusts-1000 dust, and the upper strata transparency conducting layer is promptly as the blue light positive pole.With etching remove the P type InGaN of about 100 μ m * 100 μ m and plate thereon layer of copper (Cu) or the gold (Au) metallic reflector 901 with reflect yellow,, it forms interference in order to avoid launching forward, and can with the gold-tinted of reflection via the metallic reflector on the PC plate more upwards reflection and with blue light to make full use of the energy of gold-tinted, this metallic reflector 901 is also as the blue light negative pole.Then with the heating substrate to the eutectic point of metal, for example 450-550 ℃, or will place blue light wafer 403 fusion or adhesive bond on the gold-tinted wafer 131 with ultrasonic wave or with transparent viscose glue, as Figure 12 and shown in Figure 13.With metal connecting line (wire bond) gold-tinted on the wafer, blue light, green glow and ruddiness positive pole are connected to gold-tinted, blue light, green glow and ruddiness positive pole on the PC plate respectively at last, blue light, green glow negative pole are connected to the grounding electrode 701 on the PC plate respectively, as shown in figure 12.Promptly finish the encapsulation of second embodiment of the invention again with the transparent plastic material sealing.Its equivalent electric circuit as shown in figure 15.
The bias voltage of the modulation wafer of all kinds of second embodiment of the invention to change its electric current different luminous intensities mixed and the light (colour with reference to the AB line of figure 3 and CD line changes) of different colours, not only can reduce caloric value, its heat radiation is also preferable, can increase the wafer life-span.
The third embodiment of the present invention is to utilize the structure that left side Huang, lan chip are stacked or right-hand part is red, green wafer is stacked of Fig. 7 and Figure 12 to make it send white light by adjusting its bias voltage with a fixing current value.As the AB line of Fig. 3 and CD line plotted point (White white light) and white light LEDs for the usefulness of illumination.Third embodiment of the invention is not limited to use stacked yellow light LED wafer and blue-ray LED wafer or stacked red-light LED wafer and green light LED wafer, and (that is mix the back be two kinds of colors of white light, can obtain as Fig. 3) all can as long as both emission wavelengths are complementary person.Redness in the example, green, blueness, sodium yellow LED are not limited to above-mentioned material, also other material, and also be not limited to simple diode, can be quantum well structures.
The above is preferred embodiment of the present invention, is not in order to qualification the present invention, and all other do not break away from the equivalence of finishing under the disclosed spirit and change or modification, all should be within the scope of the present invention.
Claims (34)
1. the encapsulating structure of a stacked three primary colors light-emitting diode is to utilize metallic reflector and transparency conducting layer that the LED wafer of red, blue, green three kinds of colors directly on the stacked PC of the being incorporated into plate and form colourama LED, be is characterized in that: comprise at least:
(a): a PC substrate, plate the layer of metal reflector on it and form pattern, comprise die bond pad, the anodal wiring pad of a ruddiness, the anodal wiring pad of a blue light, the anodal wiring pad of a green glow, reach a public negative pole wiring pad;
(b): the first red-light LED wafer, have the ruddiness positive pole of a transparency conducting layer and the ruddiness negative pole of a metallic reflector, one side of this ruddiness positive pole has the anodal wiring pad of a square metal reflector double as ruddiness, and this red-light LED wafer directly is stacked and placed on the die bond pad of PC plate;
(c): the second blue-ray LED wafer, have the blue light negative pole of transparency conducting layer and the blue light positive pole of a transparency conducting layer, one side of this blue light positive pole has a square anodal wiring pad of metallic reflector double as blue light, and have a long-bar metal reflector and make negative pole wiring pad, this blue-ray LED wafer directly is stacked and placed on the aforementioned red-light LED wafer;
(d): the 3rd green light LED wafer, have the green glow positive pole of a transparency conducting layer and the green glow negative pole of a transparency conducting layer, one side of this green glow positive pole has a square anodal wiring pad of metallic reflector double as green glow, and the green glow negative pole with a square metal reflector makes the wiring pad, and this green light LED wafer directly is stacked and placed on the aforementioned blue-ray LED wafer;
(e): a plurality of metal wires are this first red-light LED wafer, and anodal wiring pad on this second blue-ray LED wafer and the 3rd green light LED wafer and negative pole wiring pad are connected to respectively on the anodal wiring pad and negative pole wiring pad on the PC plate.
2. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: metallic reflector on this PC plate and wiring pad are copper or gold, and its thickness is 1000 dusts-20000 dusts, are preferably 2000 dusts-5000 dust.
3. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: this red-light LED wafer is a P type InGaP brilliant pn junction diode on n type GaAS substrate of heap of stone, and its size is the rectangle of 400 μ m-1000 μ m.
4. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: a side of the ruddiness positive pole of this red-light LED wafer has the metallic reflector of a strip and makes the anodal wiring pad of ruddiness.
5. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1, it is characterized in that: this blue-ray LED wafer is the pn junction diode of brilliant n type InGaN of heap of stone and P type InGaN gained on the transparent sapphire, and its size is the rectangle of 300 μ m-900 μ m.
6. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1, it is characterized in that: a side of the blue light positive pole of this blue-ray LED wafer has a square metallic reflector and makes the anodal wiring pad of blue light and reflect red and blue light, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after the P type InGaN of a strip was removed in etching.
7. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1, it is characterized in that: this green light LED wafer is a pn junction diode of building brilliant n type InGaN and P type InGaN gained on transparent sapphire, and its size is the square of 200 μ m-800 μ m.
8. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1, it is characterized in that: a side of the green glow positive pole of this green light LED wafer has a square metallic reflector and makes the anodal wiring pad of blue light and reflect red and blue light, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after a square P type InGaN was removed in etching.
9. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: this metallic reflector is copper or gold, and its thickness is 1000 μ m-20000 μ m, preferable 2000 μ m-5000 μ m.
10. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: this transparency conducting layer indium oxide (In
2O
3) or tin oxide (SnO2), thickness is 200 dusts-10000 dusts, is preferably 500 dusts-1000 dust.
11. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: the metallic reflector of the positive pole that this is square and negative pole wiring pad are aluminium or gold, and its width is 50 μ m-200 μ m, is preferably 100 μ m.
12. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: stacked combination is that the heating substrate is to the metal eutectic point of 450-550C and fusion bonded.
13. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: stacked combination is with the ultrasonic wave fusion combination.
14. the encapsulating structure of stacked three primary colors light-emitting diode according to claim 1 is characterized in that: stacked combination is bonding with transparent viscose glue.
15. the bias method of a stacked three primary colors LED package is characterized in that: utilize the modulation bias voltage to supply red-light LED, blue-ray LED and green light LED respectively, its luminous intensity is changed and change its colour.
16. stacked yellow light LED wafer, blue-ray LED wafer and a red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, be to utilize metallic reflector and transparency conducting layer with on yellow light LED wafer and the stacked PC of the being incorporated into plate of blue-ray LED wafer, in addition position adjacent on red-light LED wafer and the stacked PC of the being incorporated into plate of green light LED wafer is formed the colourama LED of encapsulation arranged side by side, it is characterized in that: comprise at least:
(a): a PC substrate, plate the layer of metal reflector on it and form pattern, comprise die bond pad, the anodal wiring pad of a ruddiness, the anodal wiring pad of a blue light, the anodal wiring pad of a gold-tinted, the anodal wiring pad of a green glow, reach a public negative pole wiring pad;
(b): one first yellow light LED wafer, have the gold-tinted negative pole of a metallic reflector and the gold-tinted positive pole of a transparency conducting layer, a side of this gold-tinted positive pole has the metallic reflector of a strip and makes anodal wiring pad of gold-tinted and reflect yellow;
(c): one second blue-ray LED wafer, have the blue light negative pole of a transparent conducting shell and the blue light positive pole of a transparency conducting layer, one side of this blue light positive pole has a square metallic reflector and makes the anodal wiring pad of blue light and reflect yellow and blue light, and have a rectangular square metallic reflector and make negative pole wiring pad, this blue-ray LED wafer directly is stacked and placed on the aforementioned yellow light LED wafer, gives combination;
(d): one the 3rd red-light LED wafer, have the ruddiness negative pole of a metallic reflector and the ruddiness positive pole of a transparency conducting layer, a side of this ruddiness positive pole has the metallic reflector of a strip and makes anodal wiring pad of ruddiness and reflect red;
(e): one the 4th green light LED wafer, have the green glow positive pole of a transparency conducting layer and the green glow negative pole of a transparency conducting layer, one side of this green glow positive pole has a square metallic reflector and makes the anodal wiring pad of green glow and reflect red and green glow, and the green glow negative pole with a strip metallic reflector makes the wiring pad, and this green light LED wafer directly is stacked and placed on and gives combination on the aforementioned red-light LED wafer:
(f): a plurality of metal wires are with this first red yellow light LED wafer, this second blue-ray LED wafer, anodal wiring pad on the 3rd red-light LED wafer and the 4th green light LED wafer and negative pole wiring pad are connected to respectively on the anodal wiring pad and negative pole wiring pad on the PC plate.
17. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: metallic reflector on this PC plate and wiring pad are copper or gold, its thickness is 1000 dusts-20000 dusts, is preferably 3000 dusts-8000 dust.
18. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this yellow light LED wafer is a P type InGaAlP brilliant pn junction diode on n type GaAS substrate of heap of stone, and its size is the rectangle of 300 μ m-1000 μ m.
19. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: a side of the gold-tinted positive pole of this yellow light LED wafer has the metallic reflector of a strip and makes anodal wiring pad of gold-tinted and reflect yellow.
20. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this blue-ray LED wafer is a pn junction diode of building brilliant n type InGaN and P type InGaN gained on transparent sapphire, and its size is the square of 300 μ m-900 μ m.
21. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: a side of the blue light positive pole of this blue-ray LED wafer has a square metallic reflector and does anodal wiring pad of blue light and reflection, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after a square P type InGaN was removed in etching.
22. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this red-light LED wafer is a P type InGaAlP brilliant pn junction diode on n type GaAS substrate of heap of stone, and its size is the rectangle of 300 μ m-700 μ m.
23. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: a side of the ruddiness positive pole of this red-light LED wafer has the metallic reflector of a strip and makes anodal wiring pad of ruddiness and reflect red.
24. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: a side of the blue light positive pole of this blue-ray LED wafer has a square metallic reflector to be made the anodal wiring pad of blue light and makes reflect yellow, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after a square P type InGaN was removed in etching.
25. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this red-light LED wafer is a P type InGaP brilliant pn junction diode on n type GaAs substrate of heap of stone, its size is the rectangle of 400 μ m-1000 μ m, and wherein the metallic reflector of a side of the ruddiness positive pole of this red-light LED wafer with a strip made anodal wiring pad of ruddiness and reflect red.
26. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this green light LED wafer is a pn junction diode of building brilliant n type InGaN and P type InGaN gained on transparent sapphire, and its size is the square of 200 μ m-600 μ m.
27. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: a side of the green glow positive pole of this green light LED wafer has a square metallic reflector and makes anodal wiring pad of green glow and reflect red, and negative pole is that negative pole wiring pad was made in sputter layer of metal reflector after a square P type InGaN was removed in etching.
28. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this metallic reflector is aluminium or gold, its thickness is 1000 dusts-20000 dusts, preferable 2000 dusts-5000 dust.
29. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: this transparency conducting layer is indium oxide (InO) or tin oxide (SnO), thickness is 200 dusts-10000 dusts, is preferably 500 dusts-1000 dust.
30. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: the metallic reflector of this square positive pole and negative pole wiring pad are aluminium or gold, its width is 50 μ m-200 μ m, is preferably 100 μ m.
31. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: stacked combination is that the heating substrate is to 450-550 ℃ metal eutectic point and fusion bonded.
32. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: stacked combination is with the ultrasonic wave fusion combination.
33. stacked yellow light LED wafer according to claim 16, blue-ray LED wafer and red-light LED wafer, green light LED wafer constitute the encapsulating structure of color LED side by side, it is characterized in that: stacked combination is that transparent adhesive tape is bonding.
34. stacked yellow light LED wafer, blue-ray LED wafer and a red-light LED wafer, green light LED wafer constitute the bias method of color LED encapsulation side by side, it is characterized in that: utilize the modulation bias voltage to supply red-light LED, blue-ray LED and green light LED respectively, its luminous intensity is changed and change its colour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011396911A CN100392873C (en) | 2001-12-07 | 2001-12-07 | Structure and method for packaging colour light-emitting diode with stacked wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011396911A CN100392873C (en) | 2001-12-07 | 2001-12-07 | Structure and method for packaging colour light-emitting diode with stacked wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1423345A true CN1423345A (en) | 2003-06-11 |
| CN100392873C CN100392873C (en) | 2008-06-04 |
Family
ID=4675345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011396911A Expired - Fee Related CN100392873C (en) | 2001-12-07 | 2001-12-07 | Structure and method for packaging colour light-emitting diode with stacked wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100392873C (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379044C (en) * | 2005-01-14 | 2008-04-02 | 友达光电股份有限公司 | Generation of whitelight source,whitelight luminous element and its mfg.method |
| CN100379037C (en) * | 2004-01-06 | 2008-04-02 | 晶元光电股份有限公司 | Light-emitting diode structure |
| CN100411211C (en) * | 2006-10-10 | 2008-08-13 | 华中科技大学 | Monolithic integrated white light diode |
| CN100433380C (en) * | 2005-04-11 | 2008-11-12 | 新世纪光电股份有限公司 | White light emitting device with light-emitting diode and application thereof |
| US7455423B2 (en) | 2005-04-28 | 2008-11-25 | Sharp Kabushiki Kaisha | Semiconductor light emitting device |
| CN100505343C (en) * | 2004-10-21 | 2009-06-24 | 宇部兴产株式会社 | Light emitting diode element, board for light emitting diode and method for manufacturing light emitting diode element |
| CN102543988A (en) * | 2012-03-02 | 2012-07-04 | 大连理工大学 | Metal supporting vertical structure fluorescent powderless white light LED |
| WO2014036939A1 (en) * | 2012-09-10 | 2014-03-13 | 厦门市三安光电科技有限公司 | Warm white light-emitting diode and manufacturing method thereof |
| CN108010932A (en) * | 2017-11-29 | 2018-05-08 | 北京工业大学 | A kind of Micro-LED array preparation methods of panchromatic stacking-type extension |
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
| CN109860163A (en) * | 2019-01-30 | 2019-06-07 | 武汉华尚绿能科技股份有限公司 | A kind of double-side wick one LED |
| JP2021504959A (en) * | 2017-11-27 | 2021-02-15 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | Light emitting diode for display and display device having it |
| US11522008B2 (en) | 2018-01-02 | 2022-12-06 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
| US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11527514B2 (en) | 2017-12-20 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11532664B2 (en) | 2017-11-27 | 2022-12-20 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11557577B2 (en) | 2018-01-03 | 2023-01-17 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11804511B2 (en) | 2017-12-05 | 2023-10-31 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11804512B2 (en) | 2017-12-14 | 2023-10-31 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11935912B2 (en) | 2017-11-27 | 2024-03-19 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| US11973104B2 (en) | 2022-05-26 | 2024-04-30 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233204A (en) * | 1992-01-10 | 1993-08-03 | Hewlett-Packard Company | Light-emitting diode with a thick transparent layer |
| US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
| US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
-
2001
- 2001-12-07 CN CNB011396911A patent/CN100392873C/en not_active Expired - Fee Related
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100379037C (en) * | 2004-01-06 | 2008-04-02 | 晶元光电股份有限公司 | Light-emitting diode structure |
| CN100505343C (en) * | 2004-10-21 | 2009-06-24 | 宇部兴产株式会社 | Light emitting diode element, board for light emitting diode and method for manufacturing light emitting diode element |
| CN100379044C (en) * | 2005-01-14 | 2008-04-02 | 友达光电股份有限公司 | Generation of whitelight source,whitelight luminous element and its mfg.method |
| CN100433380C (en) * | 2005-04-11 | 2008-11-12 | 新世纪光电股份有限公司 | White light emitting device with light-emitting diode and application thereof |
| US7455423B2 (en) | 2005-04-28 | 2008-11-25 | Sharp Kabushiki Kaisha | Semiconductor light emitting device |
| CN100463168C (en) * | 2005-04-28 | 2009-02-18 | 夏普株式会社 | Semiconductor luminous component |
| CN100411211C (en) * | 2006-10-10 | 2008-08-13 | 华中科技大学 | Monolithic integrated white light diode |
| CN102543988A (en) * | 2012-03-02 | 2012-07-04 | 大连理工大学 | Metal supporting vertical structure fluorescent powderless white light LED |
| CN102543988B (en) * | 2012-03-02 | 2014-06-25 | 大连理工大学 | Metal supporting vertical structure fluorescent powderless white light LED |
| WO2014036939A1 (en) * | 2012-09-10 | 2014-03-13 | 厦门市三安光电科技有限公司 | Warm white light-emitting diode and manufacturing method thereof |
| US11563052B2 (en) | 2017-11-27 | 2023-01-24 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| US11935912B2 (en) | 2017-11-27 | 2024-03-19 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
| JP2021504959A (en) * | 2017-11-27 | 2021-02-15 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | Light emitting diode for display and display device having it |
| US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11532664B2 (en) | 2017-11-27 | 2022-12-20 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| US11610939B2 (en) | 2017-11-27 | 2023-03-21 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
| CN108010932A (en) * | 2017-11-29 | 2018-05-08 | 北京工业大学 | A kind of Micro-LED array preparation methods of panchromatic stacking-type extension |
| CN108010932B (en) * | 2017-11-29 | 2019-10-29 | 北京工业大学 | A kind of Micro-LED array preparation method of panchromatic stacking-type extension |
| US11804511B2 (en) | 2017-12-05 | 2023-10-31 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11804512B2 (en) | 2017-12-14 | 2023-10-31 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11527514B2 (en) | 2017-12-20 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11527513B2 (en) | 2017-12-20 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11756984B2 (en) | 2017-12-21 | 2023-09-12 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11522008B2 (en) | 2018-01-02 | 2022-12-06 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
| US11557577B2 (en) | 2018-01-03 | 2023-01-17 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US11923348B2 (en) | 2018-01-03 | 2024-03-05 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| CN109659330A (en) * | 2018-12-14 | 2019-04-19 | 鸿利智汇集团股份有限公司 | A kind of LED component and its manufacturing method |
| CN109860163A (en) * | 2019-01-30 | 2019-06-07 | 武汉华尚绿能科技股份有限公司 | A kind of double-side wick one LED |
| US11973104B2 (en) | 2022-05-26 | 2024-04-30 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100392873C (en) | 2008-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100392873C (en) | Structure and method for packaging colour light-emitting diode with stacked wafer | |
| US8704265B2 (en) | Light emitting device package and lighting apparatus using the same | |
| TW522534B (en) | Light source of full color LED using die bonding and packaging technology | |
| US6744196B1 (en) | Thin film LED | |
| KR100845856B1 (en) | LED package and method of manufacturing the same | |
| CN1697208A (en) | Generation of whitelight source,whitelight luminous element and its mfg.method | |
| CN1706043A (en) | LED light engine for AC operation and methods of fabricating same | |
| CN100483762C (en) | LED device making method | |
| CN101627482A (en) | Array of luminescent elements | |
| JP2004214592A (en) | Color mixing light emitting diode | |
| TW200739942A (en) | White semiconductor light emitting element and manufacturing method thereof | |
| CN102386307A (en) | LED package with contrasting face | |
| JP2000349345A (en) | Semiconductor light emitting device | |
| JPH0710003B2 (en) | Mixed color light emitting semiconductor device | |
| US20070252167A1 (en) | Surface mounting optoelectronic device | |
| KR101504168B1 (en) | Light emitting device package, backlight unit and lighting device | |
| CN102779814A (en) | Light emitting element capable of giving out white light and light mixing method of light emitting element | |
| CN2508401Y (en) | Stacked wafer whole-color LED package structure | |
| KR101504171B1 (en) | Light emitting device package, backlight unit and lighting device | |
| TW201301570A (en) | Multi-color light emitting diode and manufacturing method thereof | |
| KR20170032020A (en) | Light emitting device package | |
| KR20050070349A (en) | Fabrication of many colors light emitting diode | |
| CN1773703A (en) | White light emitting element and producing method thereof | |
| CN1819284A (en) | LED and production thereof | |
| CN1391291A (en) | Semiconductor package structure for white dual-crystal LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080604 Termination date: 20101207 |